JP4936443B2 - Liquid honing method - Google Patents

Liquid honing method Download PDF

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JP4936443B2
JP4936443B2 JP2006309192A JP2006309192A JP4936443B2 JP 4936443 B2 JP4936443 B2 JP 4936443B2 JP 2006309192 A JP2006309192 A JP 2006309192A JP 2006309192 A JP2006309192 A JP 2006309192A JP 4936443 B2 JP4936443 B2 JP 4936443B2
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liquid
honing
workpiece
mask member
processing
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JP2008119806A (en
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永留夢 新田
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Bridgestone Corp
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本発明は液体ホーニング加工方法(以下、「加工方法」とも称する)に関し、詳しくは、汚染を嫌う被加工物に対する液体ホーニング加工方法に関する。   The present invention relates to a liquid honing method (hereinafter also referred to as “processing method”), and more particularly, to a liquid honing method for a workpiece that is not subject to contamination.

従来より、被加工物表面の研磨加工や仕上げ加工の目的で、液体ホーニングによる処理が用いられている。液体ホーニングは、被加工物の処理面に対し、砥粒を含むホーニング液を吹き付けることにより表面加工を行う加工方法である。   Conventionally, processing by liquid honing has been used for the purpose of polishing or finishing the surface of a workpiece. Liquid honing is a processing method in which surface processing is performed by spraying a honing liquid containing abrasive grains on a processing surface of a workpiece.

一般に、液体ホーニングにおいて加工を施したくない箇所がある場合には、図2(a)に示すように、粘着剤22を介して接着するテープ21等のマスク部材により被加工物20の表面の一部をマスクした状態で、吹き付け処理を行っている(例えば、特許文献1等)。これにより、マスクされた箇所については砥粒を含むホーニング液10が接触しないため、同図(b)に示すように、目的とする加工領域Aのみを、例えば梨地に加工するとともに、それ以外の非加工領域Bについては素地のまま残すことができる。
特開平11−004063号公報(特許請求の範囲等)
In general, when there is a portion that is not desired to be processed in liquid honing, as shown in FIG. 2 (a), the surface of the workpiece 20 is covered with a mask member such as a tape 21 that is bonded via an adhesive 22. The spraying process is performed with the portion masked (for example, Patent Document 1). Thereby, since the honing liquid 10 containing the abrasive grains does not come into contact with the masked portion, as shown in FIG. The unprocessed region B can be left as it is.
JP-A-11-004063 (Claims etc.)

しかしながら、シリコンウェーハ等の汚染を嫌う被加工物に対し液体ホーニング処理を施す場合には、粘着テープでマスクを行うと、マスクした部分に粘着剤が残留してしまう場合があった。粘着剤は、水等による洗浄では容易に除去できないため、問題となっていた。   However, when a liquid honing process is performed on a workpiece that does not like contamination such as a silicon wafer, if the masking is performed with an adhesive tape, the adhesive may remain on the masked portion. The adhesive is problematic because it cannot be easily removed by washing with water or the like.

そこで本発明の目的は、シリコンウェーハ等の汚染を嫌う被加工物についても、マスクによる粘着剤の残留の問題を生ずることなく、かつ、非加工領域を確実に保護した状態で処理を行うことのできる液体ホーニング加工方法を提供することにある。   Accordingly, an object of the present invention is to perform processing on a workpiece that is not subject to contamination, such as a silicon wafer, without causing a problem of residual adhesive due to a mask and in a state in which a non-processed area is reliably protected. It is to provide a liquid honing method that can be used.

本発明者は鋭意検討した結果、下記構成とすることにより上記問題を解決できることを見出して、本発明を完成するに至った。   As a result of intensive studies, the present inventor has found that the above-described problem can be solved by adopting the following configuration, and has completed the present invention.

すなわち、本発明の液体ホーニング加工方法は、被加工物の表面に対し砥粒を含むホーニング液を吹き付けることにより、該被加工物表面を加工する液体ホーニング加工方法において、前記被加工物表面に非加工領域を設けるにあたり、該非加工領域を、該被加工物表面と非接触であるマスク部材により覆うとともに、該マスク部材と被加工物表面との間に液体を満たした状態で、前記ホーニング液の吹付けを行うことを特徴とするものである。   That is, the liquid honing method of the present invention is a liquid honing method for processing a surface of a workpiece by spraying a honing liquid containing abrasive grains onto the surface of the workpiece. In providing the processing region, the non-processing region is covered with a mask member that is not in contact with the workpiece surface, and the honing liquid is filled with a liquid between the mask member and the workpiece surface. It is characterized by spraying.

本発明においては、前記液体を、前記マスク部材を介して、該マスク部材と前記被加工物表面との間に供給することが好ましく、より好適には、前記液体を供給し続けながら、前記ホーニング液の吹付けを行う。この場合、前記マスク部材と前記被加工物表面との間の距離は、好適には0.1〜3.0mmとする。また、前記液体としては、純水を好適に用いることができる。本発明は、前記被加工物がシリコンウェーハである場合に特に効果的である。   In the present invention, the liquid is preferably supplied between the mask member and the workpiece surface via the mask member, and more preferably, the honing is continued while supplying the liquid. Spray the liquid. In this case, the distance between the mask member and the workpiece surface is preferably 0.1 to 3.0 mm. Moreover, as the liquid, pure water can be suitably used. The present invention is particularly effective when the workpiece is a silicon wafer.

本発明によれば、上記構成としたことにより、シリコンウェーハ等の汚染を嫌う被加工物についても、マスクによる粘着剤の残留の問題を生ずることなく、かつ、非加工領域を確実に保護した状態で処理を行うことのできる液体ホーニング加工方法を実現することが可能となった。   According to the present invention, with the above-described configuration, a non-working region is reliably protected without causing a problem of residual adhesive due to a mask even on a workpiece that is not suitable for contamination such as a silicon wafer. It has become possible to realize a liquid honing processing method that can be processed by the above method.

以下、本発明の好適実施形態について図面を参照しつつ詳細に説明する。
図1に、本発明の液体ホーニング加工方法の一実施形態を示す。図示するように、本発明においては、被加工物20の表面に対し砥粒を含むホーニング液10を吹き付けることにより、被加工物表面の加工を行う。図中の符号11はホーニング液用噴射ガンのノズルを示す。
DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 1 shows an embodiment of the liquid honing method of the present invention. As shown in the figure, in the present invention, the surface of the workpiece 20 is processed by spraying a honing liquid 10 containing abrasive grains onto the surface of the workpiece 20. Reference numeral 11 in the figure denotes a nozzle of a honing liquid spray gun.

本発明においては、被加工物20の表面に非加工領域Xを設けるにあたり、この非加工領域Xを、被加工物表面と非接触であるマスク部材1により覆うとともに、マスク部材1と被加工物表面との間に液体2を満たした状態で、ホーニング液の吹付けを行う点が重要である。本発明において被加工物表面の非加工領域Xを覆うマスク部材1は、被加工物表面との間に僅かな間隙をもって配置され、従来の粘着テープのように被加工物表面と直接接触することがないので、粘着剤の残留の問題を生ずることがない。また、単に間隙をあけるのみではホーニング液10が間隙内に浸入して、非加工領域Xの表面が砥粒により損傷する場合があるが、本発明においては、この間隙に液体2を充填しているため、これを防止することが可能である。   In the present invention, when the non-processed region X is provided on the surface of the workpiece 20, the non-processed region X is covered with the mask member 1 that is not in contact with the workpiece surface, and the mask member 1 and the workpiece. It is important that the honing liquid is sprayed in a state where the liquid 2 is filled with the surface. In the present invention, the mask member 1 that covers the non-processed region X on the workpiece surface is disposed with a slight gap between the workpiece surface and directly contacts the workpiece surface like a conventional adhesive tape. As a result, there is no problem of adhesive residue. Further, when the gap is simply opened, the honing liquid 10 may enter the gap and the surface of the non-processed region X may be damaged by abrasive grains. In the present invention, the gap 2 is filled with the liquid 2. Therefore, it is possible to prevent this.

液体2は、例えば、マスク部材1を介してマスク部材1−被加工物表面間に供給することができ、特には、液体2を供給し続けながらホーニング液10の吹付けを行う。これにより、マスク部材1−被加工物表面間に砥粒が入り込んだ場合でも、入り込んだ砥粒が液体2の圧力により減速され、押し戻されて、被加工物表面上に留まることがないため、より確実にマスキング機能を発揮させることができる。このマスク部材1の材質としては、特に制限されるものではないが、上面についてはホーニング液10中の砥粒と同等以上の硬度を有する材質(SiC若しくは他のセラミック、またはこれらにDLC(ダイヤモンドライクカーボン)等の高硬度コーティングを施したもの等)またはホーニング液10の衝撃を吸収する軟質材(ゴム類)で形成し、下面についてはナイロン等、不意に被加工物20と接触することがあっても傷つけず、かつ金属汚染も引き起こさない材質で形成したパッド等を用いることができる。   For example, the liquid 2 can be supplied between the mask member 1 and the surface of the workpiece via the mask member 1, and in particular, the honing liquid 10 is sprayed while the liquid 2 is continuously supplied. Thereby, even when abrasive grains enter between the mask member 1 and the workpiece surface, the entered abrasive grains are decelerated by the pressure of the liquid 2 and pushed back, so that they do not stay on the workpiece surface. The masking function can be exhibited more reliably. The material of the mask member 1 is not particularly limited, but the upper surface is made of a material having a hardness equal to or higher than that of the abrasive grains in the honing liquid 10 (SiC or other ceramics, or DLC (Diamond Like). Carbon)) or a soft material (rubber) that absorbs the impact of the honing liquid 10, and the lower surface may come into contact with the workpiece 20 unexpectedly, such as nylon. However, it is possible to use a pad formed of a material that is not damaged and does not cause metal contamination.

マスク部材1を介して液体を供給する方法としては、例えば、図示するように、マスク部材1の中心部に液体を導入するための配管3を設ければよい。供給された液体2は、図示するように、マスク部材1−被加工物表面間の間隙を通って非加工領域Xの外部に排出される。この場合、液体2の供給圧が高いと、ホーニング液10がはじかれて液体ホーニングの効果が低下するため、供給圧は上げすぎないことが好ましい。この液体2を噴射するエアーの吐出圧力は、0.3MPa前後とすることができる。   As a method of supplying the liquid via the mask member 1, for example, a pipe 3 for introducing the liquid into the central portion of the mask member 1 may be provided as illustrated. The supplied liquid 2 is discharged to the outside of the non-working region X through a gap between the mask member 1 and the workpiece surface as shown in the figure. In this case, when the supply pressure of the liquid 2 is high, the honing liquid 10 is repelled and the effect of the liquid honing is reduced. Therefore, it is preferable that the supply pressure is not increased too much. The discharge pressure of the air that ejects the liquid 2 can be about 0.3 MPa.

また、マスク部材1と被加工物表面との間の距離は、好適には0.1〜3.0mmとする。マスク部材1−被加工物表面間の間隙の距離を上記範囲内とすることで、液体2の表面張力により、間隙を液体2で満たすことができる。なお、この液体2としては、被加工物20に対し悪影響を及ぼすものでなければ、いかなるものを用いてもよいが、好適には純水を用いる。   Moreover, the distance between the mask member 1 and the workpiece surface is preferably 0.1 to 3.0 mm. By setting the distance of the gap between the mask member 1 and the workpiece surface within the above range, the gap can be filled with the liquid 2 due to the surface tension of the liquid 2. Any liquid 2 may be used as long as it does not adversely affect the workpiece 20, but pure water is preferably used.

本発明においては、上記のように、マスク部材1および液体2を用いて非加工領域を保護しつつ液体ホーニングによる加工を行う以外の点については特に制限されるものではなく、常法に従い実施することができる。被加工物の大きさや加工領域のサイズ/形状により、マスク部材1の大きさ/形状および必要な流量を決定して、加工を行えばよい。本発明は特に、汚染を嫌う被加工物20、例えば、シリコンウェーハなどの表面を、液体ホーニングにより加工する際に有用である。   In the present invention, as described above, the mask member 1 and the liquid 2 are not particularly limited except that the non-processed region is protected while the non-processed region is protected. be able to. The processing may be performed by determining the size / shape of the mask member 1 and the required flow rate according to the size of the workpiece and the size / shape of the processing region. The present invention is particularly useful when processing the surface of a workpiece 20 that is not subject to contamination, such as a silicon wafer, by liquid honing.

例えば、シリコンウェーハを処理する際に用いる砥粒の種類としては、SiCなどを挙げることができ、砥粒の粒径は好適には0.25〜10.0μm、特には0.25〜3.0μmである。また、砥粒を混合する液体としては、例えば、水を用いることができる。また、ホーニング液10中に混合させる砥粒の濃度は、5〜40%とすることができる。   For example, as a kind of abrasive grain used when processing a silicon wafer, SiC etc. can be mentioned, and the grain size of an abrasive grain is 0.25-10.0 micrometers suitably, especially 0.25-3. 0 μm. Moreover, as a liquid which mixes an abrasive grain, water can be used, for example. Moreover, the density | concentration of the abrasive grain mixed with the honing liquid 10 can be 5 to 40%.

さらに、表面加工を効率良く実施するために、ホーニング液10をシリコンウェーハ表面に吹き付ける際の圧縮空気の圧力は、例えば、0.05〜3.0MPaとすることができる。さらにまた、吹付けノズルとシリコンウェーハ表面との間の距離は、例えば、0.5〜100mmとする。   Furthermore, in order to implement surface processing efficiently, the pressure of the compressed air when spraying the honing liquid 10 onto the silicon wafer surface can be set to 0.05 to 3.0 MPa, for example. Furthermore, the distance between the spray nozzle and the silicon wafer surface is, for example, 0.5 to 100 mm.

なお、液体ホーニングによる表面処理後には、被加工物20表面に対する砥粒等の不純物の残留を防止するために、水等により表面の洗浄を行うことが好ましい。具体的には例えば、被加工物を500rpmで回転させつつその中心部から純水を1リットル/minで垂らすスピン洗浄を行った後、同じく被加工物中心部から吐出圧力0.1MPa程度の窒素ガスを吹き付けてスピン乾燥を行う。   In addition, after the surface treatment by liquid honing, in order to prevent impurities such as abrasive grains from remaining on the surface of the workpiece 20, the surface is preferably washed with water or the like. Specifically, for example, after performing spin cleaning in which pure water is dripped at 1 liter / min from the center while rotating the workpiece at 500 rpm, nitrogen with a discharge pressure of about 0.1 MPa is similarly applied from the center of the workpiece. Spin dry by blowing gas.

以下、本発明を、実施例を用いてより詳細に説明する。
(実施例)
表面に膜厚0.2μmの窒化膜を有する300mmシリコンウェーハに対し、水中に濃度17%で粒径2μmの砥粒を含むホーニング液を、吹付けノズルを用いて、エア圧0.3MPa、流量6リットル/minにて吹き付けることにより、液体ホーニング処理を行った。この際、非加工領域Xについては、図1に示すように、シリコンウェーハ表面と非接触であるマスク部材1としてのパッド(材質:SiC(上面),NCナイロン(下面))により覆い、液体ホーニング処理の間継続的に、配管3およびマスク部材1を介してマスク部材1−被加工物表面との間に純水2を供給した。純水2の流量は0.5リットル/min、マスク部材1−ワーク(シリコンウェーハ)間距離は0.5mmとした。また、ノズル−ワーク(シリコンウェーハ)間距離は40mmであった。さらに、処理時間は5分とした。
Hereinafter, the present invention will be described in more detail with reference to examples.
(Example)
A 300 mm silicon wafer having a nitride film with a thickness of 0.2 μm on the surface is subjected to a honing liquid containing abrasive grains having a concentration of 17% and a particle diameter of 2 μm in water using a spray nozzle, an air pressure of 0.3 MPa, and a flow rate. The liquid honing process was performed by spraying at 6 liter / min. At this time, as shown in FIG. 1, the non-processed region X is covered with a pad (material: SiC (upper surface), NC nylon (lower surface)) as a mask member 1 that is not in contact with the silicon wafer surface, and liquid honing is performed. During the treatment, pure water 2 was supplied between the mask member 1 and the workpiece surface via the pipe 3 and the mask member 1. The flow rate of pure water 2 was 0.5 liter / min, and the distance between the mask member 1 and the workpiece (silicon wafer) was 0.5 mm. The distance between the nozzle and the workpiece (silicon wafer) was 40 mm. Furthermore, the processing time was 5 minutes.

処理後に非加工領域Xを確認したところ、この領域に砥粒による損傷はなく、結果として、加工すべき領域のみを加工することができた。すなわち、マスク部材1と被加工物表面との間に間隙があっても、純水を流通させることで純水により間隙を満たしながら排出させているため、ホーニング液10が非加工領域の中心部に入りにくく、結果として、マスク部材1と純水2とによりマスキング機能が十分に発揮されたことが確かめられた。   When the non-processed area | region X was confirmed after the process, there was no damage by an abrasive grain in this area | region, As a result, only the area | region which should be processed was processed. That is, even if there is a gap between the mask member 1 and the workpiece surface, the pure water is discharged while filling the gap with pure water, so that the honing liquid 10 is in the center of the non-working region. As a result, it was confirmed that the masking function was sufficiently exerted by the mask member 1 and the pure water 2.

本発明の液体ホーニング加工方法の一実施形態を示す概略説明図である。It is a schematic explanatory drawing which shows one Embodiment of the liquid honing processing method of this invention. 従来の液体ホーニング処理を示す概略説明図である。It is a schematic explanatory drawing which shows the conventional liquid honing process.

符号の説明Explanation of symbols

1 マスク部材
2 液体
3 配管
10 ホーニング液
11 吹付けノズル
20 被加工物
21 マスクテープ
22 粘着剤
A 加工領域
B,X 非加工領域
DESCRIPTION OF SYMBOLS 1 Mask member 2 Liquid 3 Piping 10 Honing liquid 11 Spray nozzle 20 Work piece 21 Mask tape 22 Adhesive A Processing area B, X Non-processing area

Claims (6)

被加工物の表面に対し砥粒を含むホーニング液を吹き付けることにより、該被加工物表面を加工する液体ホーニング加工方法において、
前記被加工物表面に非加工領域を設けるにあたり、該非加工領域を、該被加工物表面と非接触であるマスク部材により覆うとともに、該マスク部材と被加工物表面との間に液体を満たした状態で、前記ホーニング液の吹付けを行うことを特徴とする液体ホーニング加工方法。
In a liquid honing method for processing the workpiece surface by spraying a honing liquid containing abrasive grains on the surface of the workpiece,
In providing a non-working region on the workpiece surface, the non-working region is covered with a mask member that is not in contact with the workpiece surface, and a liquid is filled between the mask member and the workpiece surface. A liquid honing method, wherein the honing liquid is sprayed in a state.
前記液体を、前記マスク部材を介して、該マスク部材と前記被加工物表面との間に供給する請求項1記載の液体ホーニング加工方法。   The liquid honing method according to claim 1, wherein the liquid is supplied between the mask member and the workpiece surface through the mask member. 前記液体を供給し続けながら、前記ホーニング液の吹付けを行う請求項2記載の液体ホーニング加工方法。   The liquid honing processing method according to claim 2, wherein the honing liquid is sprayed while the liquid is continuously supplied. 前記マスク部材と前記被加工物表面との間の距離を、0.1〜3.0mmとする請求項1〜3のうちいずれか一項記載の液体ホーニング加工方法。   The liquid honing method according to claim 1, wherein a distance between the mask member and the workpiece surface is 0.1 to 3.0 mm. 前記液体として純水を用いる請求項1〜4のうちいずれか一項記載の液体ホーニング加工方法。   The liquid honing method according to claim 1, wherein pure water is used as the liquid. 前記被加工物がシリコンウェーハである請求項1〜5のうちいずれか一項記載の液体ホーニング加工方法。   The liquid honing method according to claim 1, wherein the workpiece is a silicon wafer.
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