TWI296153B - Apparatus and method of driving non-volatile dram - Google Patents

Apparatus and method of driving non-volatile dram Download PDF

Info

Publication number
TWI296153B
TWI296153B TW092137307A TW92137307A TWI296153B TW I296153 B TWI296153 B TW I296153B TW 092137307 A TW092137307 A TW 092137307A TW 92137307 A TW92137307 A TW 92137307A TW I296153 B TWI296153 B TW I296153B
Authority
TW
Taiwan
Prior art keywords
capacitor
voltage
memory
transistor
cell
Prior art date
Application number
TW092137307A
Other languages
English (en)
Chinese (zh)
Other versions
TW200509375A (en
Inventor
Jin-Hong Ahn
Sang-Hoon Hong
Young-June Park
Sang-Don Lee
Yil-Wook Kim
Gi-Hyun Bae
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200509375A publication Critical patent/TW200509375A/zh
Application granted granted Critical
Publication of TWI296153B publication Critical patent/TWI296153B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
TW092137307A 2003-08-22 2003-12-29 Apparatus and method of driving non-volatile dram TWI296153B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20030058300 2003-08-22
KR1020030064354A KR100543938B1 (ko) 2003-08-22 2003-09-17 불휘발성 다이나믹 랜덤 액세스 메모리 구동 회로 및 방법

Publications (2)

Publication Number Publication Date
TW200509375A TW200509375A (en) 2005-03-01
TWI296153B true TWI296153B (en) 2008-04-21

Family

ID=37229445

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092137307A TWI296153B (en) 2003-08-22 2003-12-29 Apparatus and method of driving non-volatile dram

Country Status (4)

Country Link
JP (1) JP5102812B2 (ko)
KR (1) KR100543938B1 (ko)
CN (1) CN101494084B (ko)
TW (1) TWI296153B (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100988812B1 (ko) * 2008-04-10 2010-10-20 주식회사 하이닉스반도체 주변 영역에 입체형 커패시터를 구비하는 반도체 메모리장치
CN102201411B (zh) * 2010-03-25 2013-04-03 上海丽恒光微电子科技有限公司 叠栅非易失性快闪存储单元、存储器件及其制造方法
US8441850B2 (en) * 2010-10-08 2013-05-14 Qualcomm Incorporated Magnetic random access memory (MRAM) layout with uniform pattern
KR101987934B1 (ko) * 2012-12-07 2019-06-13 에스케이하이닉스 주식회사 전류 보상기를 포함하는 반도체 장치
KR102002942B1 (ko) * 2013-04-18 2019-07-24 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그 제조방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5331188A (en) * 1992-02-25 1994-07-19 International Business Machines Corporation Non-volatile DRAM cell
EP0792505B1 (en) * 1994-10-19 2001-07-04 Intel Corporation Voltage supplies for flash memory
JP3299900B2 (ja) * 1996-12-27 2002-07-08 シャープ株式会社 不揮発性メモリ及びその動作方法

Also Published As

Publication number Publication date
CN101494084A (zh) 2009-07-29
JP2009217932A (ja) 2009-09-24
KR100543938B1 (ko) 2006-01-23
TW200509375A (en) 2005-03-01
JP5102812B2 (ja) 2012-12-19
KR20050020546A (ko) 2005-03-04
CN101494084B (zh) 2012-10-31

Similar Documents

Publication Publication Date Title
US7224609B2 (en) Apparatus and method of driving non-volatile DRAM
US6009011A (en) Non-volatile memory and method for operating the same
US6954377B2 (en) Non-volatile differential dynamic random access memory
US4432072A (en) Non-volatile dynamic RAM cell
US7859899B1 (en) Non-volatile memory and method of operating the same
US9214465B2 (en) Structures and operational methods of non-volatile dynamic random access memory devices
US9779814B2 (en) Non-volatile static random access memory devices and methods of operations
CN111149165B (zh) 用于随机存取和铁电存储器的损耗均衡
JPS6233672B2 (ko)
KR20200136491A (ko) 메모리 셀 감지
TWI303425B (en) Non-volatile dynamic random access memory
US7054201B2 (en) Driving circuit for non-volatile DRAM
US6751125B2 (en) Gate voltage reduction in a memory read
TWI296153B (en) Apparatus and method of driving non-volatile dram
KR100560301B1 (ko) 트랩 가능한 부도체를 사용하는 불휘발성 디램의 구동회로 및 방법
TWI533306B (zh) 非揮發性動態隨機存取記憶體裝置之結構及操作方法
KR20060001876A (ko) 비휘발성 디램
JP2002237578A (ja) 不揮発性メモリ
JP2004134531A (ja) 不揮発性ダイナミック・ランダムアクセスメモリ

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees