TWI293649B - A method for processing a substrate - Google Patents

A method for processing a substrate Download PDF

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Publication number
TWI293649B
TWI293649B TW094110239A TW94110239A TWI293649B TW I293649 B TWI293649 B TW I293649B TW 094110239 A TW094110239 A TW 094110239A TW 94110239 A TW94110239 A TW 94110239A TW I293649 B TWI293649 B TW I293649B
Authority
TW
Taiwan
Prior art keywords
substrate
metal
processing
layer
heater
Prior art date
Application number
TW094110239A
Other languages
English (en)
Chinese (zh)
Other versions
TW200538573A (en
Inventor
Kazuhito Nakamura
Cory Wajda
Enrico Mosca
Yumiko Kawano
Gerrit J Leusink
Fenton R Mcfeely
Sandra G Malhotra
Original Assignee
Tokyo Electron Ltd
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Ibm filed Critical Tokyo Electron Ltd
Publication of TW200538573A publication Critical patent/TW200538573A/zh
Application granted granted Critical
Publication of TWI293649B publication Critical patent/TWI293649B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Resistance Heating (AREA)
TW094110239A 2004-03-31 2005-03-31 A method for processing a substrate TWI293649B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/814,768 US7419702B2 (en) 2004-03-31 2004-03-31 Method for processing a substrate

Publications (2)

Publication Number Publication Date
TW200538573A TW200538573A (en) 2005-12-01
TWI293649B true TWI293649B (en) 2008-02-21

Family

ID=34960969

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094110239A TWI293649B (en) 2004-03-31 2005-03-31 A method for processing a substrate

Country Status (6)

Country Link
US (1) US7419702B2 (enExample)
JP (1) JP5475229B2 (enExample)
KR (1) KR101234492B1 (enExample)
CN (1) CN100557075C (enExample)
TW (1) TWI293649B (enExample)
WO (1) WO2005103325A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7323400B2 (en) * 2004-08-30 2008-01-29 Micron Technology, Inc. Plasma processing, deposition and ALD methods
US8124528B2 (en) 2008-04-10 2012-02-28 Micron Technology, Inc. Method for forming a ruthenium film
JP5434614B2 (ja) * 2010-01-14 2014-03-05 東京エレクトロン株式会社 基板処理装置
KR20130122503A (ko) * 2012-04-30 2013-11-07 세메스 주식회사 기판 세정 장치 및 기판 세정 방법
US8877617B2 (en) 2012-09-27 2014-11-04 Sunpower Corporation Methods and structures for forming and protecting thin films on substrates
US9528184B2 (en) * 2015-02-13 2016-12-27 Eastman Kodak Company Atomic-layer deposition method using compound gas jet
CN106158569B (zh) * 2015-03-26 2018-08-07 理想晶延半导体设备（上海）有限公司 半导体处理设备
US10121655B2 (en) 2015-11-20 2018-11-06 Applied Materials, Inc. Lateral plasma/radical source
US10006123B2 (en) * 2016-05-10 2018-06-26 The Boeing Company Species controlled chemical vapor deposition
CN112853316B (zh) * 2020-12-31 2023-03-14 拓荆科技股份有限公司 镀膜装置及其承载座
KR102872170B1 (ko) 2021-07-19 2025-10-15 삼성전자주식회사 반도체 장치의 제조용 장비 및 반도체 장치의 제조 방법

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4248943A (en) * 1980-04-21 1981-02-03 Ford Motor Company Sodium sulfur container with chromium/chromium oxide coating
US4894257A (en) * 1988-07-05 1990-01-16 The United States Of America As Represented By The Secretary Of America Method of overcoating a high current density cathode with rhodium
GB9001833D0 (en) * 1990-01-26 1990-03-28 De Beers Ind Diamond Method of bonding a diamond film to a substrate
JPH0559556A (ja) * 1991-09-02 1993-03-09 Osaka Gas Co Ltd Ｃｖｄ薄膜形成装置の基板保持台
JPH0741386A (ja) * 1993-07-29 1995-02-10 Sanyo Electric Co Ltd ダイヤモンド状被膜基板およびその形成方法
US5626963A (en) * 1993-07-07 1997-05-06 Sanyo Electric Co., Ltd. Hard-carbon-film-coated substrate and apparatus for forming the same
US5705080A (en) * 1994-07-06 1998-01-06 Applied Materials, Inc. Plasma-inert cover and plasma cleaning process
US5952060A (en) * 1996-06-14 1999-09-14 Applied Materials, Inc. Use of carbon-based films in extending the lifetime of substrate processing system components
US6197628B1 (en) * 1998-08-27 2001-03-06 Micron Technology, Inc. Ruthenium silicide diffusion barrier layers and methods of forming same
JP4547744B2 (ja) * 1999-11-17 2010-09-22 東京エレクトロン株式会社 プリコート膜の形成方法、成膜装置のアイドリング方法、載置台構造及び成膜装置
TW484189B (en) 1999-11-17 2002-04-21 Tokyo Electron Ltd Precoat film forming method, idling method of film forming device, loading table structure, film forming device and film forming method
JP4703810B2 (ja) * 2000-03-07 2011-06-15 東京エレクトロン株式会社 Ｃｖｄ成膜方法
JP3549188B2 (ja) * 2000-03-27 2004-08-04 日本エー・エス・エム株式会社 半導体基板への薄膜成膜方法
JP5165817B2 (ja) * 2000-03-31 2013-03-21 ラム リサーチ コーポレーション 静電チャック及びその製造方法
US6440495B1 (en) * 2000-08-03 2002-08-27 Applied Materials, Inc. Chemical vapor deposition of ruthenium films for metal electrode applications
US6461909B1 (en) * 2000-08-30 2002-10-08 Micron Technology, Inc. Process for fabricating RuSixOy-containing adhesion layers
JP2002115063A (ja) * 2000-10-06 2002-04-19 Ebara Corp 処理装置の付着物除去方法、付着物固定化方法及び処理装置
US6413321B1 (en) * 2000-12-07 2002-07-02 Applied Materials, Inc. Method and apparatus for reducing particle contamination on wafer backside during CVD process
JP4060526B2 (ja) * 2000-12-13 2008-03-12 株式会社日立国際電気 半導体装置の製造方法
JP2002338388A (ja) * 2001-02-15 2002-11-27 Ngk Insulators Ltd ダイヤモンドコート部材
US6869876B2 (en) * 2002-11-05 2005-03-22 Air Products And Chemicals, Inc. Process for atomic layer deposition of metal films

Also Published As

Publication number Publication date
CN100557075C (zh) 2009-11-04
JP2007531997A (ja) 2007-11-08
CN1938450A (zh) 2007-03-28
KR101234492B1 (ko) 2013-02-18
US7419702B2 (en) 2008-09-02
KR20070026378A (ko) 2007-03-08
TW200538573A (en) 2005-12-01
WO2005103325A1 (en) 2005-11-03
US20050221002A1 (en) 2005-10-06
JP5475229B2 (ja) 2014-04-16

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MM4A Annulment or lapse of patent due to non-payment of fees