1293208 Μ ____Β7 五、發明説明（1 ) 【發明的技術領域】 (請先聞讀背面之注意事項再填寫本頁) 本發明是關於TFT基板、使用此基板之液晶顯示裝 置及其製造方法。 【習知技術】 液晶顯示器（LCD)及有機EL顯示器等平面顯示器， 從顯示性能及節省能源化等觀點而言，已經成爲行動電話 、PDA、攜帶式電腦、以及筆記型電腦及電視等之顯示器 的主流。這些裝置之驅動用開關元件使用TFT基板等。 TFT基板上之低阻抗的電極及配線材料，以鋁合金爲主流 。另外，透明電極之材料則以使用銦錫氧化物（ITO)、銦 鋅氧化物（IZO)等爲主。 然而，鋁合金構成之電極上，經由層間絕緣膜之通孔 直接形成透明電極時，因會發生鋁之氧化，電極及透明電 極間會產生接觸阻抗，含有以此種材料製造之TFT基板 的液晶顯示裝置，無法正常動作，這是皆所皆知的事。 經濟部智慧財產局員工消費合作社印製 爲了解決此問題，採取以Mo、Ti、Cr等金屬夾住鋁 合金構成之電極的三層構造，可以防止鋁合金直接和透明 電極接觸，因而抑制接觸阻抗之增加，故一般都採用此方 法。 然而，要使用Mo、Ti、Cr等金屬使鋁合金成爲三層 構造，必須實施三次之金屬成膜，又，亦必須實施3次蝕 刻操作，故採取此種方法，會出現TFT基板之製造步驟 十分複雜的問題。 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐1 -4- 1293208 經濟部智慧財產局員工消費合作社印製 A7 __B7五、發明説明（2 ) 本發明之目的，是提供可安定動作之TFT基板及液 晶顯不裝置、以及有效率之製造方法。 本發明者經過審慎硏究，結果發現，在源極·汲極及 透明電極之間設置金屬薄膜緩衝層，即可防止其直接接觸 而達成前述目的。 【發明之槪要】 本發明提供之TFT基板，是在源極•汲極及透明電極 間存在絕緣層且利用絕緣層上形成之通孔實施源極•汲極 及透明電極之電氣連接的TFT基板，且源極•汲極以金屬 鋁爲主要成份，通孔上之源極•汲極及透明電極間具有金 屬薄膜緩衝層。 利用設置於源極·汲極及透明電極間之金屬薄膜緩衝 層，因可以防止電極間之接觸阻抗的增加，而可以獲得安 定之動作。 又，本發明之TFT基板的一個具體構造實例中，基 板上配置著閘極（閘極配線）、閘極絕緣膜、第一矽層、通 道保護層、第二矽層、源極•汲極、層間絕緣膜、金屬薄 膜緩衝層、及透明電極。此時，經由層間絕緣膜之通孔， 源極•實施汲極及透明電極之電氣連接。又，無通道保護 層之類型亦十.分有名。 此外，本發明之TFT基板中，金屬薄膜緩衝層最好 採用可以使用和透明電極相同之鈾刻劑進行蝕刻的物質。 因爲金屬薄膜緩衝層可以使用和透明電極相同之蝕刻 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐) (請先閲讀背面之注意事項再填寫本頁) -5- 1293208 經濟部智慧財產局員工消費合作社印製 A7 B7五、發明説明（3 ) 劑，故可簡化蝕刻步驟。 又，前述金屬薄膜緩衝層最好採用比鋁更容易氧化之 金屬爲主要成份。 使用比鋁更容易氧化之金屬，可以更進一步抑制鋁之 氧化，而使鋁及透明電極間具有更好的導電性。 此外，在鋁濺鍍後，爲了還原鋁表面上產生之氧化鋁 ，其接觸阻抗之降低有時會大於使用不易氧化之金屬。 又，前述金屬應採用氧化時具有導電性之金屬，最好 採用具透明性之金屬。 金屬氧化物具導電性時，可以更進一步降低源極•汲 極及透明電極間之接觸阻抗。又，若具有透明性，則金屬 薄膜緩衝層之整體透明性會更佳，像素部份之透明性亦提 此外，本發明之TFT基板，金屬薄膜緩衝層最好能 以 Ag、Au、Pt、Rh、Pd、Cr、In、Ga、Zn、Mo、Ti、及 Sn其中一種以上之金屬或合金所構成。 此種金屬或合金具有優良之成膜性。且，所得之薄膜 亦具有優良之安定性。 另外，本發明之TFT基板，金屬薄膜緩衝層最好能 以Cr、In、Ga、Zn、Mo、Ti、及Sn其中一種以上之金屬 或合金所構成。 此種金屬或合金之氧化後的氧化物具有優良導電性。 又，本發明之TFT基板，金屬薄膜緩衝層最好能以 In、Ga、Zn、及Sn其中一種以上之金屬或合金所構成。 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇X：297公釐） (請先閱讀背面之注意事項再填寫本頁) 1293208 A7 ______ 五、發明説明U ) 此種金屬或合金，比鋁更易氧化，而此氧化物具有良 好之透明性及導電性。 (請先閱讀背面之注意事項再填寫本頁) 此外，本發明之TFT基板，金屬薄膜緩衝層之膜厚 最好爲30〜300A。 從防止電極間之接觸阻抗增加、及金屬薄膜緩衝層之 透明性觀點，膜厚最好在此範圍內。 本發明之其他形態，爲含有前述TFT基板之液晶顯 示裝置。此液晶顯示裝置因採用此種TFT基板，性能不 會劣化且可安定動作。 本發明之其他形態，是TFT基板之製造方法，其特 徵爲，在源極•汲極上形成絕緣膜，在絕緣膜上形成通孔 ，在絕緣膜及前述通孔上形成金屬緩衝膜及透明導電膜， 同時對金屬緩衝膜及透明導電膜實施蝕刻，形成金屬薄膜 緩衝層及透明電極。 經濟部智慧財產局員工消費合作社印製 因爲形成金屬緩衝膜，源極•汲極不需爲多層構造， 而且，金屬緩衝層及透明導電膜可以同一蝕刻液進行蝕刻 ，故可有效率地製造TFT基板。又，因爲可減少材料使 用量，而可以更低之成本製造TFT基板。 【圖式之簡單說明】 圖1爲本發明之TFT基板一實施形態之a -SiTFT基 板的剖面圖。 【元件符號之說明】 本紙張尺度適用中國國家標準（CNS ) A4規格（210'〆297公釐） ' -7- 1293208 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（5 ) 1 a -SiTFT 基板 2 玻璃基板 4 閘極 6 閘極絕緣膜 8 a -Si:H(i)膜 10 通道保護層 12 a -Si:H(n)膜 14 源極•汲極 15 源極•汲極 16 源極•汲極絕緣膜 18 金屬薄膜緩衝層 20 透明電極 22 通孔 24 輸出埠 【發明之實施形態】 以下，爲本發明之TFT基板、使用此基板之液晶顯 示裝置及其製造方法。 1、TFT基板及液晶顯示裝置 (1)源極•汲極 源極·汲極之材料上，只要以金屬鋁爲主要成份即可 ，並無特別限制。金屬鋁以外之成份及其量亦無特別限制 。金屬鋁以外之成份可以爲如Nd、Pt、Pd、Zn、及Ni等 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ' —~一 (请先閱讀背面之注意事項存填寫本貢)1293208 Μ ________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________ [Practical Technology] Flat-panel displays such as liquid crystal displays (LCDs) and organic EL displays have become mobile phones, PDAs, portable computers, and displays for notebook computers and televisions from the viewpoints of display performance and energy saving. Mainstream. A TFT substrate or the like is used as the switching element for driving these devices. Low-impedance electrodes and wiring materials on the TFT substrate are mainly made of aluminum alloy. Further, as the material of the transparent electrode, indium tin oxide (ITO), indium zinc oxide (IZO) or the like is mainly used. However, when the transparent electrode is directly formed through the through hole of the interlayer insulating film on the electrode made of the aluminum alloy, oxidation of aluminum occurs, contact resistance is generated between the electrode and the transparent electrode, and liquid crystal containing the TFT substrate made of such a material It is well known that the display device does not operate normally. In order to solve this problem, the Ministry of Economic Affairs, Intellectual Property Office, and the Consumers' Cooperatives have printed a three-layer structure that sandwiches the electrodes made of aluminum, such as Mo, Ti, and Cr, to prevent the aluminum alloy from directly contacting the transparent electrode, thereby suppressing the contact resistance. This method is generally adopted because of the increase. However, if a metal such as Mo, Ti, or Cr is used to make the aluminum alloy have a three-layer structure, it is necessary to perform three times of metal film formation, and three etching operations must be performed. Therefore, in this method, a TFT substrate manufacturing step occurs. Very complicated question. This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm 1 -4- 1293208 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing A7 __B7 V. Invention description (2) The purpose of the present invention is to provide stability The inventors of the present invention have carefully studied and found that a metal thin film buffer layer is provided between the source, the drain and the transparent electrode to prevent direct The present invention provides a TFT substrate in which an insulating layer is interposed between a source, a drain, and a transparent electrode, and a source, a drain, and a transparent layer are formed through a via hole formed in the insulating layer. The electrode is electrically connected to the TFT substrate, and the source and drain electrodes are made of metal aluminum as a main component, and the source, the drain, and the transparent electrode on the via hole have a metal film buffer layer. The use is provided at the source, the drain, and the transparent layer. The metal thin film buffer layer between the electrodes can prevent the increase of the contact resistance between the electrodes, thereby achieving a stable operation. Further, a specific structure of the TFT substrate of the present invention In the example, a gate (gate wiring), a gate insulating film, a first germanium layer, a channel protective layer, a second germanium layer, a source/drain, an interlayer insulating film, a metal thin film buffer layer, and In this case, the source electrode is electrically connected to the drain electrode and the transparent electrode through the via hole of the interlayer insulating film. Further, the type of the channel-free protective layer is also known. Further, in the TFT substrate of the present invention, The metal film buffer layer is preferably a material which can be etched using the same uranium engraving as the transparent electrode. Since the metal film buffer layer can be etched using the same etching electrode as the transparent electrode, the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 public).厘) (Please read the note on the back and fill out this page) -5- 1293208 The Intellectual Property Office of the Intellectual Property Office of the Ministry of Economic Affairs printed A7 B7 5, the invention description (3) agent, so the etching step can be simplified. The thin film buffer layer is preferably made of a metal which is more easily oxidized than aluminum. The use of a metal which is more easily oxidized than aluminum can further suppress the oxidation of aluminum, and And the transparent electrode has better conductivity. In addition, after aluminum sputtering, in order to reduce the alumina generated on the surface of aluminum, the contact resistance is reduced more than the metal which is not easily oxidized. A metal having conductivity when oxidized is preferably a transparent metal. When the metal oxide is electrically conductive, the contact resistance between the source, the drain, and the transparent electrode can be further reduced. Further, if it is transparent, The overall transparency of the metal film buffer layer is better, and the transparency of the pixel portion is also improved. In addition, the TFT substrate of the present invention preferably has a metal film buffer layer of Ag, Au, Pt, Rh, Pd, Cr, In, A metal or an alloy of one or more of Ga, Zn, Mo, Ti, and Sn. Such metals or alloys have excellent film forming properties. Moreover, the obtained film also has excellent stability. Further, in the TFT substrate of the present invention, the metal thin film buffer layer is preferably made of a metal or an alloy of one or more of Cr, In, Ga, Zn, Mo, Ti, and Sn. The oxidized oxide of such a metal or alloy has excellent electrical conductivity. Further, in the TFT substrate of the present invention, the metal thin film buffer layer is preferably made of one or more of In, Ga, Zn, and Sn. This paper scale applies to China National Standard (CNS) A4 specification (21〇X: 297 mm) (Please read the note on the back and fill out this page) 1293208 A7 ______ V. Invention description U) This kind of metal or alloy, than Aluminum is more susceptible to oxidation, and this oxide has good transparency and electrical conductivity. (Please read the precautions on the back side and fill out this page.) Further, in the TFT substrate of the present invention, the film thickness of the metal thin film buffer layer is preferably 30 to 300 Å. The film thickness is preferably within this range from the viewpoint of preventing the contact resistance between the electrodes from increasing and the transparency of the metal film buffer layer. Another aspect of the present invention is a liquid crystal display device including the TFT substrate. Since such a liquid crystal display device employs such a TFT substrate, the performance is not deteriorated and the operation can be stabilized. According to another aspect of the present invention, in a method of manufacturing a TFT substrate, an insulating film is formed on a source/drain, a via hole is formed in the insulating film, and a metal buffer film and a transparent conductive layer are formed on the insulating film and the via hole. The film is simultaneously etched with a metal buffer film and a transparent conductive film to form a metal film buffer layer and a transparent electrode. Printed by the Intellectual Property Office of the Intellectual Property Office of the Ministry of Economic Affairs, because the metal buffer film is formed, the source and the drain do not need to be multi-layered, and the metal buffer layer and the transparent conductive film can be etched by the same etching liquid, so that the TFT can be efficiently manufactured. Substrate. Further, since the amount of material used can be reduced, the TFT substrate can be manufactured at a lower cost. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing an a-SiTFT substrate according to an embodiment of a TFT substrate of the present invention. [Description of component symbols] This paper scale applies to China National Standard (CNS) A4 specification (210'〆297 mm) ' -7- 1293208 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 B7 V. Invention description (5) 1 a -SiTFT substrate 2 Glass substrate 4 Gate 6 Gate insulating film 8 a -Si:H(i) film 10 Channel protective layer 12 a -Si:H(n) film 14 Source •Pole 15 Source • Deuterium 16 source/deuterium insulating film 18 metal thin film buffer layer 20 transparent electrode 22 through hole 24 output 埠 [Embodiment of the invention] Hereinafter, a TFT substrate of the present invention, a liquid crystal display device using the same, and a method of manufacturing the same . 1. TFT substrate and liquid crystal display device (1) Source/drainage The material of the source and the bungee is not particularly limited as long as it is made of metal aluminum. There are no special restrictions on the composition and amount of metal aluminum. The components other than metal aluminum can be used for the paper size such as Nd, Pt, Pd, Zn, and Ni. The Chinese National Standard (CNS) A4 specification (210X297 mm) '-~1 (please read the notes on the back) Ben Gong)
-8- 經濟部智慧財產局員工消費合作社印製 1293208 A7 B7 五、發明説明（6 ) 之金屬。 (2)金屬薄膜緩衝層 金屬薄膜緩衝層設於源極·汲極及透明電極之間，可 以防止此電極間之接觸阻抗的增加。 金屬薄膜緩衝層具有導電性，可以爲容易氧化者，亦 可以不易氧化者。容易氧化時，氧化物最好具有導電性， 若爲透明則更佳。 金屬薄膜緩衝層之材料上，只要可以防止電極間之接 觸阻抗的增加，並無特別限制。例如，Ag、Au、Pt、Rh 、Pd、及Ci*其中一種以上之金屬或合金。 又，這些金屬或合金最好能以和透明電極相同之蝕刻 劑進行蝕刻者。此外，最好爲比鋁更易氧化者，若其金屬 氧化物具有透明性及導電性則更佳。 前述蝕刻液並無特別限制。例如，草酸水溶液、硝 酸-乙酸-磷酸系水溶液、鹽酸水溶液、溴化氫水溶液、氯 化鐵-鹽酸水溶液、及王水等。 又，可以同時鈾刻之材料上，如Ag、Au、Pt、Rh、-8- Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed 1293208 A7 B7 V. Inventions (6) Metal. (2) Metal film buffer layer The metal film buffer layer is provided between the source, drain and transparent electrodes to prevent an increase in contact resistance between the electrodes. The metal film buffer layer is electrically conductive and can be easily oxidized or oxidized. When it is easily oxidized, the oxide is preferably electrically conductive, and more preferably transparent. The material of the metal thin film buffer layer is not particularly limited as long as it can prevent an increase in the contact resistance between the electrodes. For example, a metal or an alloy of one or more of Ag, Au, Pt, Rh, Pd, and Ci*. Further, these metals or alloys are preferably etched by the same etchant as the transparent electrode. Further, it is preferable to be more oxidizable than aluminum, and it is more preferable if the metal oxide has transparency and conductivity. The etching liquid is not particularly limited. For example, an aqueous solution of oxalic acid, an aqueous solution of nitric acid-acetic acid-phosphoric acid, an aqueous solution of hydrochloric acid, an aqueous solution of hydrogen bromide, an aqueous solution of iron chloride-hydrochloric acid, and aqua regia. Also, it can be simultaneously uranium engraved materials such as Ag, Au, Pt, Rh,
Pd、Cr、In、Ga、Zn、Mo、Ti、及Sn其中一種以上之金 屬或合金。 比鋁更易氧化且此氧化物具有良好之透明性及導電性 之材料上，如Ci·、In、Ga、Zn、Mo、Ti、及Sn其中一種 以上之金屬或合金。 金屬薄膜緩衝層之膜厚最好爲30〜300A。此理由爲 本紙張尺度適用中81國家標準（CNS ) A4規格（210X297公釐)— (請先閲讀背面之注意事項再填寫本頁)A metal or alloy of one or more of Pd, Cr, In, Ga, Zn, Mo, Ti, and Sn. A metal or alloy which is more oxidizable than aluminum and which has good transparency and electrical conductivity, such as one or more of Ci, In, Ga, Zn, Mo, Ti, and Sn. The film thickness of the metal film buffer layer is preferably from 30 to 300 Å. This reason is for the 81-country standard (CNS) A4 specification (210X297 mm) for this paper size. (Please read the note on the back and fill out this page.)
-9 - 1293208 A7 ___B7 五、發明説明（7 ) (請先閲讀背面之注意事項再填寫本頁) ，膜厚30 A以下時，有時會因爲薄膜太薄而金屬薄膜緩 衝層無法發揮效果。另一方面，膜厚超過300 A時，透明 性會較差。 又，金屬薄膜緩衝層之材料採用容易氧化之金屬時， 爲了獲得較佳之透明性，可以增加膜厚。 此外，使用容易氧化之金屬時，其膜厚應爲30〜 100A。其理由爲，膜厚30 A以下時，因爲薄膜太薄，可 能使源極•汲極中之鋁產生氧化而提高其和透明電極間之 接觸阻抗。另一方面，膜厚超過100 A時，光線透過率可 能會降低。 又，金屬薄膜緩衝層之材料使用其氧化物具有透明性 及導電性之金屬時，其膜厚應爲30〜300A。其理由爲， 膜厚30 A以下時，因爲薄膜太薄，可能無法發揮防止接 觸阻抗增加之效果。另一方面，膜厚超過300 A時，氧化 程度會較低而降低透明性。 (3) 透明電極 經濟部智慧財產局員工消費合作社印製 透明電極之材料上，如銦錫氧化物（ITO)及銦鋅氧化 物（IZO)等之氧化物。 (4) 其他 本發明之TFT基板，如基板及閘極等前述以外之構 成部份，並無特別限制，可以使用一般之構成及材料。 又’液晶顯示裝置方面，前述TFT基板以外之構成 本紙張尺度適财關家縣（CNS ) ( 210X297公釐) " -10- 1293208 A7 ___B7 五、發明説明（8 ) 部份，亦無特別限制，可以使用一般之構成及材料。 (請先閲讀背面之注意事項再填寫本頁) 2、TFT基板之製造方法 本發明之TFT基板的製造方法上，以相同蝕刻劑對 金屬緩衝膜及透明導電膜同時實施蝕刻，形成金屬薄膜緩 衝層及透明電極。 因爲採取同時蝕刻，可以減少蝕刻步驟之次數，亦可 抑制材料之使用量。 此外，含有金屬薄膜緩衝層及透明電極之TFT基板 之各成份的形步驟，並無特別限制。例如，各成份之成膜 方法上，可以使用真空蒸鍍法或濺鍍法等。此時，真空蒸 鍍或濺鍍方法及裝置並無特別限制。真空蒸鍍法之實例上 ，如電子束法、離子濺鍍法、及阻抗加熱法等。/夂，濺鍍 法之實例上，如高頻濺鍍法、DC濺鍍法、RF濺鍍法、 DV磁控管濺鍍法、RF磁控管濺鍍法、ECR等離子體濺鍍 法、離子束濺鍍法等。 經濟部智慧財產局員工消費合作社印製 又，使此種方法成膜之金屬薄膜形成目的電極之圖案 的手段、及通孔之形成手段，並無特別限制，可使用通常 之光學石版印刷法等。 [實施例] 以下針對實施例進行本發明之詳細說明，本發明並不 限於此實施例。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -11 - 1293208 A7 _ B7__ 五、發明説明（9 ) [實施例1] 以圖1說明本發明之一實施例。 (請先閱讀背面之注意事項再填寫本頁) 圖1爲本發明之TFT基板一實施形態之a -SiTFT基 板的剖面圖。 在具透光性之玻璃基板2上，利用高頻濺鍍法將含有 lat%Nd之金屬Al(阻抗率：5//Ω·〇：ιη)層疊成1，50〇Α之厚度 。以硝酸·乙酸-磷酸水溶液做爲蝕刻液，利用照相蝕刻 (photo etching)法對此層進行蝕刻，形成期望形狀之閘極 4及閘極配線（圖上未標示）。 其次，使用SiHU-NH3-N2系氣體做爲排出氣體 (discharge gas)，層疊成由第一氮化砂（SiNx)膜構成之膜厚 3,000 A的閘極絕緣膜6。 接著，使用SiH4-N2系之混合氣體做爲排出氣體，層 疊成膜厚3,500 A之a -Si:H⑴膜（第一矽膜）8。 再在其上，使用SiH4-NH3-N2系氣體做爲排出氣體， 層疊成膜厚700 A之第二氮化矽（SiNx)膜。以使用CF4氣 體之乾蝕刻，從此第二SiNx膜形成期望之通道保護層10 〇 經濟部智慧財產局員工消費合作社印製 接著，使用SiH^H2-PH3系之混合氣體，層疊成膜厚 1，000 A 之 a -Si:H(n)膜（第二矽膜）12。 又，以輝光放電CVD法層疊閘極絕緣膜6、a -Si:H(i) 膜8、通道保護層10、及a -Si:H(n)膜12。 其次，以真空蒸鍍法或濺鍍法在其上將含有lat%Nd 之Al(阻抗率：5// Ωνηι)層疊成0.3// m之厚度。使用硝酸- 本紙張又度適用中國國家標準（CNS ) A4規格（210X297公釐） 一 -12- 1293208 A7 B7 五、發明説明（1〇 ) 乙酸-磷酸水溶液系蝕刻液，以照相蝕刻法對此A1層，實 施期望之源極•汲極1 4、1 5、及源極•汲極配線（圖上未標 示）的圖案化。 又，倂用CF4氣體之乾蝕刻及聯氨（ΝΗ2ΝΗ2·Η2〇)水溶 液之濕蝕刻，使a -Si··H(i)膜8及a -Si:11(11)膜12之圖案 成爲期望之圖案。 如上面所述，利用輝光放電CVD法，層疊膜厚3,〇〇〇 A之第三氮化砂（SiNx)膜的源極•汲極絕緣膜（層間絕緣膜 )16。此時，第三SiNx膜採用SiH4-NH3-N2系氣體做爲排 出氣體。 其次，採用CF4氣體乾蝕刻之照相蝕刻法，形成閘極 之輸出埠24、源極之輸出埠（圖上未標示）、源極•汲極1 5 、及透明電極（像素電極）20之電氣接觸點的通孔22。 其後，源極•汲極絕緣膜1 6之整面，會以真空蒸鍍法 或濺鍍法使金屬In形成膜厚100 A之金屬緩衝膜。然後 ，再以濺鑛法層疊以氧化銦及氧化鋅爲主要成份之非晶質 透明導電膜。 將In及Zn之原子比（atom ratio) [ In/(I + Zn)]調整爲 0.83之In2〇3-ZnO燒結體設置於平面磁控管型之陰極，使 用純氬、或混入lVol %程度微量氧氣之氬氣當做排出氣體 ，層疊濺鍍目.標之膜厚1，000 A的透明導電膜。 以X光繞射法分析此In2〇3-Zn〇膜，未觀察到峰値， 故爲非晶質。使用草酸3.4wt%之水溶液，利用照相蝕刻 法，將金屬緩衝膜及透明導電膜圖案化成金屬薄膜緩衝層 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ----------批衣-- (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 -13- !293208 A7 B7 五、發明説明（11 ) 1 8、透明電極20、及輸出電極，再形成遮光膜圖案’完 成a -SiTFT基板1。 利用此基板製成TFT-LCD方式平面顯示器後’輸入 視頻訊號確認顯示性能，確認顯示性能良好。 [實施例2] 除了將實施例1之金屬薄膜緩衝層1 8從膜厚1 〇〇 A 之金屬In更改爲膜厚50 A之金屬Ag、以及將金屬薄膜 緩衝層18及透明電極20之蝕刻液從草酸3.4wt%之水溶 液更改爲硝酸-乙酸-磷酸水溶液以外，其餘和實施例1相 同，製造出TFT-LCD方式平面顯示器。對所獲得之液晶 顯示裝置輸入視頻訊號確認顯示性能，確認顯示性能良好 〇 [比較例1 ] 除了省略實施例1之金屬薄膜緩衝層1 8的成膜步驟 以外’其餘和實施例1相同，製造出TFT-LCD方式平面 顯示器。對所獲得之液晶顯示裝置輸入視頻訊號確認顯示 性能，無法輸入訊號而確認顯示性能不良。 【發明之功效.】 利用本發明，可以提供動作安定之TFT基板及液晶 顯示裝置、及具效率之·製造方法。 本紙張尺度適用中國國家標準（CNS ) Α4規格（2!OX297公餐） (請先閲讀背面之注意事項再填寫本頁) 裝· -訂- 經濟部智慧財產局員工消費合作社印製 -14 --9 - 1293208 A7 ___B7 V. INSTRUCTIONS (7) (Please read the precautions on the back and fill out this page). When the film thickness is 30 A or less, the film may be too thin and the metal film buffer layer may not work. On the other hand, when the film thickness exceeds 300 A, the transparency is inferior. Further, when the material of the metal thin film buffer layer is made of a metal which is easily oxidized, the film thickness can be increased in order to obtain better transparency. Further, when a metal which is easily oxidized is used, the film thickness thereof should be 30 to 100 Å. The reason is that when the film thickness is 30 A or less, since the film is too thin, the aluminum in the source/drain can be oxidized to improve the contact resistance between the electrode and the transparent electrode. On the other hand, when the film thickness exceeds 100 A, the light transmittance may be lowered. Further, when the metal thin film buffer layer is made of a metal having transparency and conductivity, the film thickness should be 30 to 300 Å. The reason is that when the film thickness is 30 A or less, since the film is too thin, the effect of preventing the increase in contact resistance may not be exhibited. On the other hand, when the film thickness exceeds 300 A, the degree of oxidation is lowered to lower the transparency. (3) Transparent Electrode The Ministry of Economic Affairs, Intellectual Property Office, and the Consumer Cooperatives printed on the transparent electrode materials, such as oxides such as indium tin oxide (ITO) and indium zinc oxide (IZO). (4) Others The TFT substrate of the present invention, such as a substrate and a gate, is not particularly limited, and a general configuration and materials can be used. Further, in terms of the liquid crystal display device, the composition of the paper other than the TFT substrate is suitable for Guanzhong County (CNS) (210X297 mm) " -10- 1293208 A7 ___B7 5. Inventive Note (8), and there is no special Limitations, general composition and materials can be used. (Please read the precautions on the back side and fill out this page.) 2. Manufacturing method of TFT substrate In the method of manufacturing a TFT substrate of the present invention, the metal buffer film and the transparent conductive film are simultaneously etched by the same etchant to form a metal film buffer. Layer and transparent electrode. Since simultaneous etching is employed, the number of etching steps can be reduced, and the amount of material used can be suppressed. Further, the step of forming the respective components of the TFT substrate including the metal thin film buffer layer and the transparent electrode is not particularly limited. For example, a vacuum deposition method, a sputtering method, or the like can be used for the film formation method of each component. At this time, the vacuum evaporation or sputtering method and apparatus are not particularly limited. Examples of the vacuum evaporation method are, for example, an electron beam method, an ion sputtering method, and an impedance heating method. /夂, examples of sputtering methods, such as high frequency sputtering, DC sputtering, RF sputtering, DV magnetron sputtering, RF magnetron sputtering, ECR plasma sputtering, Ion beam sputtering method, etc. The means for forming the pattern of the target electrode and the means for forming the through hole by the metal film formed by the method of the method are not particularly limited, and the usual optical lithography method can be used. . [Examples] The detailed description of the present invention is now made to the examples, and the present invention is not limited to the examples. This paper scale applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) -11 - 1293208 A7 _ B7__ V. Description of the Invention (9) [Embodiment 1] An embodiment of the present invention will be described with reference to FIG. (Please read the precautions on the back side and fill in this page.) Fig. 1 is a cross-sectional view showing an a-SiTFT substrate according to an embodiment of the TFT substrate of the present invention. On the glass substrate 2 having light transmittance, a metal Al (impedance: 5 / / Ω · 〇: ιη) containing lat% Nd was laminated to a thickness of 1,50 Å by a high-frequency sputtering method. This layer was etched by photolithography using a nitric acid/acetic acid-phosphoric acid aqueous solution as an etching solution to form a gate 4 and a gate wiring of a desired shape (not shown). Next, a SiHU-NH3-N2 gas was used as a discharge gas, and a gate insulating film 6 made of a first nitrided sand (SiNx) film and having a film thickness of 3,000 A was laminated. Next, a mixed gas of SiH4-N2 system was used as an exhaust gas, and a-Si:H(1) film (first ruthenium film) 8 having a film thickness of 3,500 Å was laminated. Further, a SiH4-NH3-N2 system gas was used as an exhaust gas, and a second tantalum nitride (SiNx) film having a thickness of 700 A was laminated. The dry etching using CF4 gas forms a desired channel protective layer from the second SiNx film. 〇 Printed by the Ministry of Economic Affairs, the Intellectual Property Office, and the consumer consortium, and then laminated to a film thickness of 1, using a mixture of SiH^H2-PH3 systems. A-Si:H(n) film of 000 A (second film)12. Further, the gate insulating film 6, the a-Si:H(i) film 8, the channel protective layer 10, and the a-Si:H(n) film 12 are laminated by glow discharge CVD. Next, Al (impedance: 5 / / Ωνηι) containing lat% Nd was laminated thereon to a thickness of 0.3 / / m by a vacuum evaporation method or a sputtering method. Use of nitric acid - This paper is again applicable to China National Standard (CNS) A4 specification (210X297 mm). One-12-1293208 A7 B7 V. Description of invention (1〇) Acetic acid-phosphoric acid aqueous solution is an etchant. In the A1 layer, the desired source/drain 1 4, 15 5, and the source/drain wiring (not shown) are patterned. Further, the pattern of the a-Si··H(i) film 8 and the a-Si:11(11) film 12 is desired by dry etching of CF4 gas and wet etching of an aqueous solution of hydrazine (ΝΗ2ΝΗ2·Η2〇). The pattern. As described above, the source/drain insulating film (interlayer insulating film) 16 of the third silicon nitride (SiNx) film of film thickness A is laminated by a glow discharge CVD method. At this time, the third SiNx film uses SiH4-NH3-N2 gas as the exhaust gas. Next, using the photolithography method of dry etching of CF4 gas, the output of the gate 埠24, the output of the source (not shown), the source/drain 1 5, and the transparent electrode (pixel electrode) 20 are electrically formed. The through hole 22 of the contact point. Thereafter, the entire surface of the source/drain insulating film 16 is formed by metal deposition of a metal buffer film having a thickness of 100 A by vacuum deposition or sputtering. Then, an amorphous transparent conductive film mainly composed of indium oxide and zinc oxide is laminated by a sputtering method. The In2〇3-ZnO sintered body in which the atom ratio [In/(I + Zn)] of In and Zn is adjusted to 0.83 is set in the cathode of the planar magnetron type, using pure argon or mixed into a Vol. The argon gas of a small amount of oxygen is used as an exhaust gas, and a transparent conductive film having a film thickness of 1,000 A is laminated and sputtered. The In2〇3-Zn〇 film was analyzed by X-ray diffraction method, and no peak was observed, so it was amorphous. Using a 3.4 wt% aqueous solution of oxalic acid, the metal buffer film and the transparent conductive film are patterned into a metal film buffer layer by photolithography. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210×297 mm) ------ ----Approved clothes-- (Please read the notes on the back and then fill out this page) Ordered by the Ministry of Economic Affairs, Intellectual Property Bureau, Staff and Consumer Cooperatives Print-13- !293208 A7 B7 V. Inventions (11) 1 8. Transparent The electrode 20 and the output electrode are further formed into a light-shielding film pattern to complete the a-SiTFT substrate 1. After using this substrate to make a TFT-LCD flat panel display, the input video signal confirms the display performance and confirms that the display performance is good. [Example 2] The metal thin film buffer layer 18 of Example 1 was changed from the metal In of the film thickness 1 〇〇A to the metal Ag having a film thickness of 50 A, and the metal thin film buffer layer 18 and the transparent electrode 20 were etched. The TFT-LCD type flat-panel display was produced in the same manner as in Example 1 except that the liquid was changed from a 3.4 wt% aqueous solution of oxalic acid to a nitric acid-acetic acid-phosphoric acid aqueous solution. The video signal was input to the obtained liquid crystal display device to confirm the display performance, and it was confirmed that the display performance was good. [Comparative Example 1] The same procedure as in Example 1 was carried out except that the film forming step of the metal thin film buffer layer 18 of Example 1 was omitted. A TFT-LCD flat panel display. A video signal is input to the obtained liquid crystal display device to confirm the display performance, and it is impossible to input a signal to confirm that the display performance is poor. [Effects of the Invention] According to the present invention, it is possible to provide a TFT substrate and a liquid crystal display device which are stable in operation, and an efficient manufacturing method. This paper scale applies to China National Standard (CNS) Α4 specifications (2! OX297 public meals) (please read the notes on the back and then fill out this page) Loading · - Order - Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing -14 -