CN1522470A - TFT substrate, liquid crystal display device using the same, and method of manufacturing the same - Google Patents
TFT substrate, liquid crystal display device using the same, and method of manufacturing the same Download PDFInfo
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- CN1522470A CN1522470A CNA028132793A CN02813279A CN1522470A CN 1522470 A CN1522470 A CN 1522470A CN A028132793 A CNA028132793 A CN A028132793A CN 02813279 A CN02813279 A CN 02813279A CN 1522470 A CN1522470 A CN 1522470A
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- tft substrate
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- 239000000758 substrate Substances 0.000 title claims abstract description 48
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 239000002184 metal Substances 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 28
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 19
- 239000011248 coating agent Substances 0.000 claims description 46
- 238000000576 coating method Methods 0.000 claims description 46
- 239000004411 aluminium Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 15
- 230000003647 oxidation Effects 0.000 claims description 15
- 238000007254 oxidation reaction Methods 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 229910052725 zinc Inorganic materials 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- 239000003518 caustics Substances 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000010408 film Substances 0.000 abstract 9
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 11
- 230000007797 corrosion Effects 0.000 description 9
- 238000005260 corrosion Methods 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000011701 zinc Substances 0.000 description 8
- 239000007864 aqueous solution Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- LXFUCSMCVAEMCD-UHFFFAOYSA-N acetic acid;nitric acid;phosphoric acid Chemical compound CC(O)=O.O[N+]([O-])=O.OP(O)(O)=O LXFUCSMCVAEMCD-UHFFFAOYSA-N 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- KBIWNQVZKHSHTI-UHFFFAOYSA-N 4-n,4-n-dimethylbenzene-1,4-diamine;oxalic acid Chemical compound OC(=O)C(O)=O.CN(C)C1=CC=C(N)C=C1 KBIWNQVZKHSHTI-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Natural products OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004567 concrete Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000011378 shotcrete Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Provided is an alpha-SiTFT substrate (1) which is provided with, on a substrate (2): a gate electrode (4); an insulating gate film (6); an alpha-Si-H (i) film (8); a channel protective film (10); an alpha-Si-H (n) film (12); source-drain electrodes (14, 15) containing metallic aluminum as a main component; a source/drain insulating film (16); a metal film buffer layer (18) and a transparent electrode (20). A metal buffer layer (18) and a transparent conductive film (20) are formed on the source-drain electrodes (14, 15), and are etched to form a metal thin film buffer layer (18) and a transparent electrode (20). In the through hole (22), the source-drain electrode (15) does not directly contact the transparent conductive film (20) through the metal buffer film (18), so that aluminum in the electrode (15) is not oxidized and contact resistance is not large. Thus, a TFT substrate and a liquid crystal display device which operate stably and a method for manufacturing the same with high efficiency can be provided.
Description
Technical field
The present invention relates to the TFT substrate, use its Liquid crystal disply device and its preparation method.
Background technology
From display performance and aspect such as energy-conservation, as portable phone, PDA, carry display devices such as computer, laptop computer and television set, flat-panel monitors such as LCD (LCD) and OLED display have accounted for main flow.In these devices,, use the TFT substrate as driving switch element.In the TFT substrate, as the low electrode-wiring material of resistance, aluminium alloy accounts for main flow.In addition, as the material of transparency electrode, mainly use indium tin oxide (ITO) and indium-zinc oxide (IZO) etc.
But, known on the electrode that aluminium alloy constitutes, when the through hole by interlayer dielectric directly forms transparency electrode, owing to cause the oxidation of aluminium, between electrode and transparency electrode, produce contact resistance, can not normally work so comprise with the liquid crystal indicator of the TFT substrate of such made.
In order to address this is that, generally be to form electrode that aluminium alloy is constituted with the three-decker that metals such as Mo, Ti, Cr insert and put, directly contact transparency electrode by preventing aluminium alloy, the increase of inhibition contact resistance.
But, aluminium alloy is formed three-decker for what use metals such as Mo, Ti, Cr, need carry out film forming three times to metal; and; follow the corrosion process of this film forming need carry out three times, so in such method, have manufacturing process's complicated problems of channel protective layer.
Summary of the invention
The object of the present invention is to provide TFT substrate and the liquid crystal indicator and the high efficiency manufacture method thereof of steady operation.
The result of inventor's further investigation by the metallic film resilient coating is set, prevents their direct contacts between source-drain electrode and transparency electrode, discovery can realize above-mentioned purpose.
According to the present invention, a kind of TFT substrate is provided, between source-drain electrode and transparency electrode, insert insulating barrier, by being formed on the through hole in the insulating barrier, source-drain electrode and transparency electrode are electrically connected, wherein: source-drain electrode is a main component with the metallic aluminium, in through hole, the metallic film resilient coating is arranged between source-drain electrode and transparency electrode.
Between source-drain electrode and transparency electrode, by the metallic film resilient coating is set, can prevent to increase interelectrode contact resistance, can steady operation.
Have again, in a routine concrete structure of TFT substrate of the present invention, on substrate, dispose gate electrode (grid wiring), insulated gate film, first silicon layer, channel protective layer, second silicon layer, source-drain electrode, interlayer dielectric, metallic film resilient coating, transparency electrode.In this case, by the through hole of interlayer dielectric, source-drain electrode and transparency electrode are electrically connected.The also known type that does not have channel protective layer is arranged again.
In TFT substrate of the present invention, the metallic film resilient coating preferably constitutes by reinstating the material that identical corrosive agent corrodes with transparency electrode one.
Because metallic film resilient coating and transparency electrode can be used same corrosive agent, so can simplify corrosion process.
Above-mentioned metallic film resilient coating is a main component with the metal than the easy oxidation of aluminium preferably.
If use the metal than the easy oxidation of aluminium, the oxidation of aluminium is further suppressed, and the conductivity between aluminium and transparency electrode is good.
In addition, behind sputtered aluminum, be created on the lip-deep aluminium oxide of aluminium and be reduced,, can reduce contact resistance so compare with the situation that use is difficult to the metal of oxidation.
And above-mentioned metal preferably presents the metal of conductivity when oxidation, and preferably presents the metal of the transparency.
If metal oxide has conductivity, then can further reduce the contact resistance between source-drain electrode and the transparency electrode.And if have a transparency, then the transparency of metallic film resilient coating is good, also can improve the transparency of pixel portion.
In TFT substrate of the present invention, the metallic film resilient coating preferably is made of more than one the metal or alloy of selecting from Ag, Au, Pt, Rh, Pd, Cr, In, Ga, Zn, Mo, Ti and Sn.
The film forming of such metal or alloy is good.And, also good on the stability of the film that obtains.
In TFT substrate of the present invention, the metallic film resilient coating preferably is made of more than one the metal or alloy of selecting from Cr, In, Ga, Zn, Mo, Ti and Sn.
Because the oxide when such metal or alloy is oxidized has good electrical conductivity.
In TFT substrate of the present invention, the metallic film resilient coating preferably is made of more than one the metal or alloy of selecting from In, Ga, Zn and Sn.
Because such metal or alloy is easier to be oxidized than aluminium, its oxide is excellent on the transparency and conductivity.
And in TFT substrate of the present invention, the thickness of metallic film resilient coating is 30～300 .
From preventing that interelectrode contact resistance from increasing and the transparency of metallic film resilient coating, preferably thickness is in such scope.
Another way of the present invention is the liquid crystal indicator that comprises above-mentioned TFT substrate.This liquid crystal indicator is by using such TFT substrate, but steady operation and performance does not worsen.
Another way of the present invention is to make the manufacture method of TFT substrate, and this method comprises following operation: form dielectric film on source-drain electrode; In dielectric film, form through hole; Film forming metal buffer film and nesa coating on dielectric film and through hole; Corroding metal buffer film and nesa coating form metallic film resilient coating and transparency electrode simultaneously.
By the metal buffer film is carried out film forming, do not need source-drain electrode is formed sandwich construction, and, owing to can so do not need to repeat corrosion, can make the TFT substrate expeditiously with identical corrosive agent corroding metal buffer film and nesa coating.In addition, by reducing the material use amount, can make the TFT substrate more cheaply.
Description of drawings
Fig. 1 is the profile of the α-SiTFT substrate of an execution mode of TFT substrate of the present invention.
Embodiment
TFT substrate of the present invention below is described, uses its Liquid crystal disply device and its preparation method.
1.TFT substrate and liquid crystal indicator
(1) source-drain electrode
As long as the main component of the material of source-drain electrode is a metallic aluminium, just be not particularly limited.Composition and its amount beyond the metallic aluminium also are not particularly limited.As the composition beyond the metallic aluminium, for example can enumerate metals such as Nd, Pt, Pd, Zn, Ni.
(2) metallic film resilient coating
The metallic film resilient coating is arranged between source-drain electrode and the transparency electrode, prevents that these interelectrode contact resistances from increasing.
The metallic film resilient coating has conductivity, and oxidation easily also can be difficult for oxidation.When easy oxidation, oxide preferably has conductivity, and preferably transparent.
The material of metallic film resilient coating is not particularly limited, as long as it is just passable to prevent that interelectrode contact resistance from increasing.As such example, can enumerate more than one the metal or alloy of from Ag, Au, Pt, Rh, Pd and Cr, selecting.
In addition, preferably these metal or alloy can corrode with identical corrosive agent with transparency electrode.And preferably than the metal or alloy of the easy oxidation of aluminium, this burning preferably has the transparency and conductivity.
As above-mentioned corrosive agent, be not particularly limited, for example, can enumerate the ethanedioic acid aqueous solution, nitric acid-acetic acid-phosphate aqueous solution, aqueous hydrochloric acid solution, aqueous solution of hydrogen bromide, iron chloride-aqueous hydrochloric acid solution, chloroazotic acid etc.
In addition, as the material that can corrode simultaneously, for example, can enumerate from Ag, Au, Pt, Rh, Pd, Cr, In, Ga, Zn, Mo, Ti, and Sn more than one the metal or alloy selected.
And, as the material that has the transparency and conductivity than the easy oxidation of aluminium, its oxide, for example, can enumerate more than one the metal or alloy of from Cr, In, Ga, Zn, Mo, Ti and Sn, selecting.
The thickness of metallic film resilient coating is preferably 30～300 .Its reason is that lepthymenia if thickness below 30 , then approaches, the aluminium in source-drain electrode is oxidized, with the contact resistance rising of transparency electrode.On the other hand, if thickness more than 100 , then transparent deterioration.
And, in the material of metallic film resilient coating, when using oxidized easily metal,, can make the thickness thickening because the transparency is good.
When use was difficult to the metal of oxidation, making its thickness was 30～300 .Its reason is that lepthymenia if thickness below 30 , then approaches, the aluminium in source-drain electrode is oxidized, with the contact resistance rising of transparency electrode.On the other hand, if the situation that thickness more than 100 , then has light transmission rate to reduce.
And, in the material of metallic film resilient coating, the transparency being arranged at oxide, when using the metal of conductivity, preferably making its thickness is 30～300 .Its reason is, if thickness is then thin lepthymenia below 30 , can not bring into play the effect that prevents that contact resistance from increasing.On the other hand, if thickness more than 300 , then degree of oxidation is low, the transparency descends.
(3) transparency electrode
As the material of transparency electrode, for example, can enumerate indium tin oxide (ITO) and indium-zinc oxide oxides such as (IZO).
(4) other
Be not particularly limited on the structure division of TFT substrate of the present invention beyond substrate and gate electrode etc. are above-mentioned, can use normally used structure and material.
In addition, for liquid crystal indicator, the structure division beyond the above-mentioned TFT substrate is not particularly limited, and can use normally used structure and material.
2.TFT the manufacture method of substrate
In the manufacture method of TFT substrate of the present invention, use identical corrosive agent corroding metal buffer film and nesa coating simultaneously, form metallic film resilient coating and transparency electrode.
Like this, owing to corrode simultaneously,, can suppress the use amount of material so can reduce the number of times of corrosion process.
In addition, on the formation operation of each composition of the TFT substrate that comprises metallic film resilient coating and transparency electrode, be not particularly limited.For example, as the film build method of each composition, can use vacuum-deposited coating or sputtering method etc.In addition, in this case, the method and the device of vacuum metallizing and sputter are not particularly limited.As the example of vacuum-deposited coating, can enumerate electronic beam method, ion gunite, electrical resistance heating etc.And, can enumerate high-frequency sputtering, DC sputtering method, RF sputtering method, DC magnetron sputtering method, RF magnetron sputtering method, ERC plasma sputtering, ion beam sputtering etc. as the example of sputtering method.
In addition, will be patterned into the mode of the electrode shape that needs and the generation type of through hole with the metallic film of these method film forming and be not particularly limited, and can use common photoetching process to wait and carry out.
Embodiment
Below, illustrate in greater detail the present invention according to embodiment, but the invention is not restricted to these
Embodiment.
Embodiment 1
Use Fig. 1 that one embodiment of the invention are described.
Fig. 1 is the profile of the α-SiTFT substrate of an execution mode of TFT substrate of the present invention.
On the glass substrate 2 of light transmission, (resistivity: 5 μ Ω cm) being stacked into thickness is 1500 will to contain the metal A l of the Nd of 1at% according to high-frequency sputtering.According to being that the hot corrosion method that the aqueous solution is used as corrosive liquid is corroded this layer with nitric acid-acetic acid-phosphoric acid, form the gate electrode 4 and the grid wiring (not shown) of intended shape.
Then, use SiH
4-NH
3-N
2Be gas as discharge gas, it is 300 that the insulated gate film 6 that first silicon nitride (SiNx) film is constituted is stacked into thickness.
Then, as discharge gas, use SiH
4-N
2The mist of system, it is 3500 that α-Si:H (i) film (first silicon layer) 8 is deposited to thickness.
And then, use SiH thereon
4-NH
3-N
2Be gas as discharge gas, it is 700 that second silicon nitride (SiNx) film is deposited to thickness.The 2nd SiNx film is by using CF
4The dry etching of gas forms the channel protective layer 10 of expectation.
Then, use SiH
4-H
2-PH
3It is 1000 that the mist of system is deposited to thickness with α-Si:H (n) film (second silicon layer) 12.
Have again, insulated gate film 6, α-Si:H (i) film 8, and α-Si:H (n) film 12 by glow discharge CVD method deposition.
Then, (resistivity: 5 μ Ω cm) being deposited to thickness is 0.3 μ m will to contain the Al of the Nd of 1at% according to vacuum-deposited coating or sputtering method thereon.It is that the aqueous solution corrodes that this Al layer is used nitric acid-acetic acid-phosphoric acid, forms source-drain electrode 14,15, and source leak routing (not shown) figure of expectation with the hot corrosion method.
And, by α-Si:H (i) film is used CF simultaneously
4The dry etching of gas and use hydrazine (NH
2NH
2H
2O) wet etching of the aqueous solution forms the figure of α-Si:H (i) film 8 and α-Si:H (n) film 12 in the figure of expectation.
Thereon, by glow discharge, dielectric film (interlayer dielectric) 16 is leaked in the source of the 3rd silicon nitride (SiNx) film, and to be deposited to thickness be 3000 .At this moment, as discharge gas,, use SiH with regard to Three S's iNx film
4-NH
3-N
2Be gas.
And then, according to using CF
4The hot corrosion method of dry etching method, form conveying end 24, the source electrode of gate electrode conveying end (not shown), as with the through hole 22 of the expectation of source-drain electrode 15 and transparency electrode (pixel electrode) 20 electric contact points.
Then, on whole of source leakage dielectric film 16, using vacuum-deposited coating or sputtering method is 100 s as metal buffer film film forming to thickness with metal In.Then, thereon, piling up with indium oxide and zinc oxide with sputtering method is the noncrystalline nesa coating of main component.As sputtering target, the atomic ratio [In/ (I+Zn)] of In and Zn is adjusted into 0.83 In
2O
3-ZnO sintered body is arranged on the negative electrode of plane magnetic control type, as discharge gas, uses straight argon or has sneaked into the argon gas of the trace oxygen about 1Vol%, and piling up thickness is the nesa coating of 1000 .
If analyze this In according to the refraction of X-ray method
2O
3-ZnO film does not observe peak value, is noncrystalline.Film to metal buffer film and transparency electrode uses the ethanedioic acid of 3.4wt% to corrode, and is patterned into metallic film resilient coating 18, the transparency electrode 20 of expectation and takes out electrode by the hot corrosion method, forms photomask then, finishes α-SiTFT substrate 1.
After using this substrate to make TFT-LCD mode flat-panel screens, when input TV signal was confirmed display performance, display performance was good.
Embodiment 2
Except being the metal A g that 100 metal In is transformed to thickness 50 from thickness with the metallic film resilient coating 18 of embodiment 1, the ethanedioic acid that replaces 3.4wt% with nitric acid-acetic acid-phosphate aqueous solution carries out beyond the corrosion of metallic film resilient coating 18 and transparency electrode 20, similarly to Example 1, make TFT-LCD mode flat-panel screens.In the liquid crystal indicator that TV signal is input to acquisition and when confirming display performance, display performance is good.
Comparative example 1
Except the film formation process of the metallic film resilient coating 18 that omits embodiment 1, similarly to Example 1, make TFT-LCD mode flat-panel screens.In the liquid crystal indicator that TV signal is input to acquisition and when confirming display performance, can not carry out the signal input, display performance is bad.
According to the present invention, can provide TFT substrate and the liquid crystal indicator and the high efficiency manufacture method thereof of steady operation.
Claims (9)
1. a TFT substrate is inserted with insulating barrier between source-drain electrode and transparency electrode, by being formed on the through hole in the described insulating barrier, described source-drain electrode and described transparency electrode are electrically connected, wherein:
Described source-drain electrode is main component with the metallic aluminium, in described through hole, between described source-drain electrode and described transparency electrode the metallic film resilient coating is arranged.
2. TFT substrate as claimed in claim 1 is characterized in that, described metallic film resilient coating constitutes by reinstating the material that identical corrosive agent corrodes with described transparency electrode one.
3. TFT substrate as claimed in claim 1 or 2 is characterized in that, described metallic film resilient coating is a main component with the metal than the easy oxidation of aluminium.
4. TFT substrate as claimed in claim 3 is characterized in that, described metal is the metal that presents the transparency and conductivity when oxidation.
5. TFT substrate as claimed in claim 1 or 2 is characterized in that, described metallic film resilient coating is made of more than one the metal or alloy of selecting from Ag, Au, Pt, Rh, Pd, Cr, In, Ga, Zn, Mo, Ti and Sn.
6. TFT substrate as claimed in claim 3 is characterized in that, described metallic film resilient coating is made of more than one the metal or alloy of selecting from In, Ga, Zn and Sn.
7. TFT substrate as claimed in claim 1 or 2 is characterized in that, the thickness of described metallic film resilient coating is 30～300 .
8. a liquid crystal indicator is characterized in that, comprises any one described TFT substrate in the claim 1～7.
9. the manufacture method of any one described TFT substrate in manufacturing such as the claim 1～7 is characterized in that the method comprising the steps of:
On source-drain electrode, form dielectric film;
In described dielectric film, form through hole;
On described dielectric film and described through hole, form film metal buffer film and nesa coating;
Described metal buffer film and described nesa coating are corroded simultaneously, form metallic film resilient coating and transparency electrode.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP200710/2001 | 2001-07-02 | ||
| JP2001200710A JP2003017706A (en) | 2001-07-02 | 2001-07-02 | Tft substrate, liquid crystal display device using the same, and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1522470A true CN1522470A (en) | 2004-08-18 |
| CN1279623C CN1279623C (en) | 2006-10-11 |
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ID=19037787
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB028132793A Expired - Fee Related CN1279623C (en) | 2001-07-02 | 2002-05-24 | TFT substrate, liquid crystal display device using the same, and method of manufacturing the same |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2003017706A (en) |
| KR (1) | KR20040016908A (en) |
| CN (1) | CN1279623C (en) |
| TW (1) | TWI293208B (en) |
| WO (1) | WO2003005453A1 (en) |
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- 2001-07-02 JP JP2001200710A patent/JP2003017706A/en not_active Withdrawn
-
2002
- 2002-05-24 WO PCT/JP2002/005057 patent/WO2003005453A1/en active Application Filing
- 2002-05-24 KR KR10-2003-7017295A patent/KR20040016908A/en not_active Application Discontinuation
- 2002-05-24 CN CNB028132793A patent/CN1279623C/en not_active Expired - Fee Related
- 2002-06-04 TW TW091112014A patent/TWI293208B/zh active
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI293208B (en) | 2008-02-01 |
| WO2003005453A1 (en) | 2003-01-16 |
| KR20040016908A (en) | 2004-02-25 |
| JP2003017706A (en) | 2003-01-17 |
| CN1279623C (en) | 2006-10-11 |
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