TWI291322B - Method for manufacturing an EMI shielding element - Google Patents

Method for manufacturing an EMI shielding element Download PDF

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Publication number
TWI291322B
TWI291322B TW092132898A TW92132898A TWI291322B TW I291322 B TWI291322 B TW I291322B TW 092132898 A TW092132898 A TW 092132898A TW 92132898 A TW92132898 A TW 92132898A TW I291322 B TWI291322 B TW I291322B
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Taiwan
Prior art keywords
solution
component
metal layer
sheet
nickel
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TW092132898A
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Chinese (zh)
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TW200427399A (en
Inventor
Michael E Juncker
David B Wood
Charles R Jeffreys
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Laird Technologies Inc
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields
    • H05K9/0073Shielding materials
    • H05K9/0081Electromagnetic shielding materials, e.g. EMI, RFI shielding
    • H05K9/0088Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a plurality of shielding layers; combining different shielding material structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/648Protective earth or shield arrangements on coupling devices, e.g. anti-static shielding  
    • H01R13/658High frequency shielding arrangements, e.g. against EMI [Electro-Magnetic Interference] or EMP [Electro-Magnetic Pulse]
    • H01R13/6598Shield material
    • H01R13/6599Dielectric material made conductive, e.g. plastic material coated with metal
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating

Abstract

A method for manufacturing an EMI shielding element from a sheet of polymer material includes forming the shielding element by vacuum- or pressure-molding. The formed element is then chemically etched to roughen its surface on a microscopic scale. The surface is subsequently treated with a catalyzing solution to enable the shielding element to be plated by electroless plating. A first metallic layer is deposited on the etched and catalyzed surface by electroless plating, and a second metallic layer is deposited On the first by electrolytic plating.

Description

1291322 玖、發明說明: 【發明所屬之技術領域】 發明背景 本發明係與例如通訊、光纖和電腦設備與其等之 類似物的電子設備之屏蔽元件有關。為了將該等設備的 元件以及與其連接的元件,由可能干擾其等之運作的電 磁場加以遮蔽,該屏蔽元件係有必需的。 【先前技術】 習知技藝中,這種型式的屏蔽元件係藉著將金屬薄 片切割與彎曲成所需的覆蓋式外形而形成。除此之外, 屏蔽元件已經藉著塑膠由射出模製並接著鍍上金屬以 提供必需屏蔽作用來形成。 本發明係藉由提供一更經濟之製造此種類型元件 的方法之這些習知技藝的改良。 【發明内容】 發明摘要 因此,本發明係為一種用於製造一屏蔽元件的方 法,該屏蔽元件係藉著在一以壓力或真空塑成屏蔽元件 的形狀所形成之薄片進行催化與電鍍作用,而提供用於 電子設備之EMI (電磁干擾)屏蔽作用。 該方法包含已知在製造程序期間蝕刻該作為屏蔽 元件之部件的步驟,但是該由聚合物薄片所形成之部件 係在一顯微層級下將其表面粗链化,以使得一金屬層可 5 1291322 以附著於其上。該經蝕刻表面然後被以一催化溶液催 化,以使其可以被無電極電鍍作用電鍍。 無電極電鍍作用係被用來將第一金屬層沈積在該 部件的表面上的。該第一金屬層可以是包括有銅、鎳、 鈷、銀、金或錫之任何導電性金屬,並使得該部件成為 導電性的,因而其可以在接下來的電解電鍍步驟中用來 作為陰極。 最後,電解電鍍作用係被用來將第二金屬層沈積 在該部件的表面之第一金屬層上。第二金屬層可以是包 括有鎳、錫、銅、鋅或鉻之任何的電解金屬。 本發明將現在將在下述中被更詳細地描述。 【實施方式】 較佳具體例的詳細描述 依據本發明的方法所製造的屏蔽元件在電子工業 中具有許多不同的用途,其中其等通常用於EMI屏 蔽。同樣地,其等具有許多不同的形狀和結構,以使其 等可以進行在特別的應用中所需要的屏蔽功能。舉例來 說,一屏蔽元件可以作為在一電子設備中之電路板上的 一個晶片之外蓋,或者其可以是在例如一個人電腦的電 子設備裡的一整個元件之外蓋或外殼。除此之外,該屏 蔽元件可以是一連接至一電子設備的一部份之纜線的 密封殼。簡而言之,本發明並不限於一屏蔽元件或的這 些特定的變化例。 6 1291322 依據本發明,該屏蔽元件係占& 卞货、由聚合物材料而被壓力 或真空模製,並非如習知技藝所建 1思立之加工程序一般為 射出成型的。該微薄片形式之聚入礼^ , %分物材料可以是任何樣 式’其包括有 TEFLON® (聚四盡 氣乙烯)、聚酯或聚丙 烯、但是其係較佳地^ ABS (丙稀腈_丁二婦_苯乙婦共 聚物)、HIPS (高衝擊性聚苯乙埽)或pc_ABs (聚碳 酸Sa ABS),其等係較佳地易於進行標準的催化和電 鍍程序。適當的 ABS塑膠係可取自Elkhart, Indiana’ USA 的 Bayer 公司所生產的 Lustran 752, 其係為厚度為17密耳(0.017吋;〇·43毫米)之高衝擊 性、高光澤性、黑色的ABS塑膠薄片。LUSTRAN®係 為Bay er公司所擁有的註冊商標(美國註冊號第 720,161 號)。 為了將屏蔽元件形成一所需之三度空間幾何形 狀’該聚合物材料薄片係被切割成一可以配合所使用的 裝置(也就是,一壓力或真空模製裝置)之尺寸。該薄 片係被略為加熱,以使其可被軟化並輕易地變形,併且 安置於在該成形裝置之模具兩個鑄模之間。該模具然後 被關閉,而壓力或真空係被用來使得該聚合物薄片會與 模具的形狀一致。藉此所獲得的,,部件,,在自模具上移 除時會維持其之形狀。可以瞭解的是該”部件”將會具 有成形部分(其最終將會成為所製造的屏蔽元件)與 非成形部分(此係為該薄片未在該模製裝置中變形的 1291322 區域)。後者的部 需的屏蔽元件切 在該製造方: 鍍的部件以移除 其他污染物。舉^ 泡於 1 -丙醇(丙 子)水沖洗,以穿 酒精薄膜。更概ΐ 的溶劑,都可被 該製造方法 會在一顯微層級 電鍍作用。一鉻 此種溶液可: 具有體積為830 添加 170亳升以 當該被部件: 被加熱到 7 0 °C, 在流動的 DI水 在下一個步· 姓刻的表面係被 鑛。一商業上可] 例來說,可以使 USA 的 Shipley CATAPOSIT® 係 電錢%序結束的時候可能會自所 除。 中之接下來的步驟係清潔該將被電 任何的油、脂或在形成期間可能需要之 [歹^來呪,該部件可藉由將其在室溫下浸 醇)~十秒,然後以流動的D〗(去離 Y在'又/包之後殘留在該部件上的任何 來过例如酒精之任何商業上可取得 用於清洗步驟中。 會進行-蝕刻步驟,在其中部件的表面 下破粗糙化,以將其整備以進行催化與 酸/硫酸蝕刻溶液可被用於此一目的。 藉由將380克的鉻酸溶解於足以產生 =升的溶液之DI水而製備。然後, 1濃硫酸而得到1升的體積。 被、/又/包大約七分鐘時,所產生的溶液係 亚機械地攪拌。該部件然後被移出並 中冲洗’直到在其之表面不再具有鉻。 驟中’即,該催化步驟,該部件之該經 催化以使其可被無電極電鍍作用所電 私得的催化劑可被用於此一目的中。舉 用取自於 Mar 1 bοr〇, Massachusetts, 公司之 Shipley Cataposit 44。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to shielding elements of electronic devices such as communications, optical fibers, and computer devices, and the like. In order for the components of the devices and the components connected thereto to be shielded by an electromagnetic field that may interfere with their operation, the shielding components are necessary. [Prior Art] In the prior art, this type of shielding member is formed by cutting and bending a metal foil into a desired covering shape. In addition to this, the shielding element has been formed by injection molding of plastic and then metal plating to provide the necessary shielding. The present invention is an improvement over these conventional techniques for providing a more economical method of fabricating components of this type. SUMMARY OF THE INVENTION Accordingly, the present invention is a method for fabricating a shield member that is catalyzed and plated by a sheet formed by molding a shape of a shield member under pressure or vacuum. It provides EMI (electromagnetic interference) shielding for electronic equipment. The method comprises the step of etching the component as a shielding element during the manufacturing process, but the component formed from the polymer sheet is coarsely chained at a microscopic level such that a metal layer can be 5 1291322 to attach to it. The etched surface is then catalyzed by a catalytic solution so that it can be electroplated by electroless plating. Electroless plating is used to deposit a first metal layer on the surface of the part. The first metal layer may be any conductive metal including copper, nickel, cobalt, silver, gold or tin, and makes the component electrically conductive, so that it can be used as a cathode in the subsequent electrolytic plating step. . Finally, electrolytic plating is used to deposit a second metal layer on the first metal layer on the surface of the component. The second metal layer may be any electrolytic metal including any of nickel, tin, copper, zinc or chromium. The invention will now be described in more detail below. [Embodiment] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT Shielding elements made in accordance with the method of the present invention have many different uses in the electronics industry, where they are commonly used for EMI shielding. As such, they have many different shapes and configurations to enable them to perform the shielding functions required in a particular application. For example, a shield member can be used as a wafer cover on a circuit board in an electronic device, or it can be an entire component cover or housing in an electronic device such as a personal computer. In addition, the shielding element can be a sealed housing that is connected to a portion of the cable of an electronic device. In short, the invention is not limited to a particular variation of a shield element. 6 1291322 In accordance with the present invention, the shielding element is & stocked, molded from a polymeric material by pressure or vacuum, and is not injection molded as is conventional in the art. In the form of micro-flakes, the % material can be of any pattern 'it includes TEFLON®, polyester or polypropylene, but it is preferably ABS (acrylonitrile) _ Ding Er Women _ Benzene copolymer), HIPS (high impact polystyrene) or pc_ABs (polycarbonate Sa ABS), which are preferably easy to carry out standard catalytic and electroplating procedures. A suitable ABS plastic system is available from Luertran 752 manufactured by Bayer Corporation of Elkhart, Indiana' USA, which is high impact, high gloss, black with a thickness of 17 mils (0.017 inch; 〇 43 mm). ABS plastic sheet. LUSTRAN® is a registered trademark of Bayer AG (US Registration No. 720,161). In order to form the shield element into a desired three dimensional spatial geometry, the sheet of polymeric material is cut to a size that fits the device used (i.e., a pressure or vacuum molding apparatus). The sheet is slightly heated so that it can be softened and easily deformed, and placed between the two molds of the mold of the forming apparatus. The mold is then closed and a pressure or vacuum system is used to conform the polymer sheet to the shape of the mold. The components thus obtained retain their shape as they are removed from the mold. It will be appreciated that the "part" will have a shaped portion (which will eventually become the manufactured shielding element) and a non-formed portion (this is the 1291322 region where the sheet is not deformed in the molding apparatus). The latter's required shielding elements are cut at the manufacturer: plated parts to remove other contaminants. Rinse with 1 -propanol (propionic) water to wear an alcohol film. A more general solvent can be electroplated at a microscopic level by this manufacturing method. A chrome solution of this type can be: has a volume of 830 added 170 liters to the part: is heated to 70 ° C, in the flow of DI water in the next step · the surname of the surface is mined. A commercial example can, for example, allow USA's Shipley CATAPOSIT® to be removed when it ends. The next step in cleaning is to clean any oil, grease, or may be needed during formation [this part can be immersed at room temperature for ~ 10 seconds), then Flow D (anything that has left Y on the part after the 'again/package), such as alcohol, is commercially available for use in the cleaning step. The - etching step is performed in which the surface of the part is broken. Roughening to prepare it for catalytic and acid/sulfuric acid etching solutions can be used for this purpose. It is prepared by dissolving 380 grams of chromic acid in DI water sufficient to produce a solution of = liter. Sulfuric acid gives a volume of 1 liter. The solution produced is sub-mechanically stirred when it is, and/or for about seven minutes. The part is then removed and rinsed 'until it no longer has chromium on its surface. 'i.e., the catalytic step, the catalyst that is catalyzed to make it electroplatable by electroless plating can be used for this purpose. Taken from Mar 1 bοr〇, Massachusetts, Inc. Shipley Cataposit 44.

為 Philadelphia » Pennsylvania, USA 1291322 的 Rohm and Haas公司所擁有的註冊商標(美國註冊 號第 1,031,891 號)。 一用於本製造方法中之催化溶液,係藉著以充份的 DI水稀釋50毫升的Shipley Cataposit 44,以產生 3 00毫升的體積。當該被部件被浸泡一分鐘時,所產生 的溶液係被加熱到40 °C並機械地攪拌。該部件然後被 移出並依序在二個谷裔DI水中浸泡,該部件係被留置 於第三容器中直到進行該製造方法的下一步驟。Registered trademark of Rohm and Haas Company of Philadelphia » Pennsylvania, USA 1291322 (US registration number 1,031,891). A catalytic solution used in the present manufacturing method was prepared by diluting 50 ml of Shipley Cataposit 44 with sufficient DI water to produce a volume of 300 ml. When the part was immersed for one minute, the resulting solution was heated to 40 ° C and mechanically stirred. The part is then removed and sequentially immersed in two Valley DI waters which are retained in the third container until the next step of the manufacturing process.

Shipley Cataposit 44係使用一錫和鈀的混合物來 作為催化劑。運用鈀、金、銀或鉑的其他催化劑也可在 實際上被用於本發明中。 下一個步驟係為一無電極電鍍步驟。一商業上可取 得的無電極電鍍溶液可被用於此一目的中。舉例來說, 可以使用取自於 Waterbury, Connecticut, USA 的 MacDermid 公司之 MacDermid Ultra Dep 1000 無電極 銅電解溶液。為了要進行無電極電鍍步驟,可以製備適 當數量的MacDermid Ultra Dep 1000無電極銅電解溶 液,將其加熱到50°C,並機械地攪拌同時預備的催化 材料係被進行電鍍15到20分鐘以將該溶液活化。該 預備的材料然後被移除,而該將被電鍍的部件然後被 浸在仍然正被機械地攪拌的溶液中,並電鍍大約七分 鐘。該部件然後被移除並在流動的DI水下沖洗。 9 1291322 或者,無電極電鍍步驟可以在不背離本發明的範圍 下,用以鎳、鈷、銀、金或錫為基礎無電極電鍍溶液來 進行。Shipley Cataposit 44 uses a mixture of tin and palladium as a catalyst. Other catalysts using palladium, gold, silver or platinum can also be used in the present invention. The next step is an electrodeless plating step. A commercially available electrodeless plating solution can be used for this purpose. For example, a MacDermid Ultra Dep 1000 electrodeless copper electrolytic solution from MacDermid Corporation of Waterbury, Connecticut, USA can be used. In order to perform the electrodeless plating step, an appropriate amount of MacDermid Ultra Dep 1000 electrodeless copper electrolytic solution can be prepared, heated to 50 ° C, and mechanically stirred while the prepared catalytic material is electroplated for 15 to 20 minutes to The solution is activated. The prepared material is then removed and the component to be electroplated is then immersed in a solution that is still being mechanically agitated and plated for approximately seven minutes. The part is then removed and rinsed under flowing DI water. 9 1291322 Alternatively, the electrodeless plating step can be carried out using an electroless plating solution based on nickel, cobalt, silver, gold or tin without departing from the scope of the invention.

本發明的製造方法的最後一個步驟係為一電解電 鍍步驟。一商業上可取得的電解電鍍溶液可被用於此一 目的中。舉例來說,可以使用也是取自於 Waterbury, Connecticut, USA 的 MacDermid 公司之 MacDermid Barrett SN (胺磺酸鎳電解溶液)。為了要進行無電極電 鍍步驟,可以製備適當數量的 MacDermid Barrett SN 溶液,將其加熱到 5 0 °C,並調整至 4.0的 pH值。一 個標準的赫爾電池鎳陽極然後被安裝在被機械地攪拌 之該電解電鍍溶液中。 該部件是然後以 2.0安培電鍍大約 2分鐘,旋轉 180° ,再以 2.0安培電鍍大約另外的 2分鐘。該部 件然後從該溶液中移除,在流動的 DI水下沖洗;並在 80°C 下乾燥 30分鐘。The final step in the manufacturing method of the present invention is an electrolytic plating step. A commercially available electrolytic plating solution can be used for this purpose. For example, MacDermid Barrett SN (nickel sulfonate electrolytic solution), also available from MacDermid, Waterbury, Connecticut, USA, can be used. To perform an electrodeless electroplating step, an appropriate amount of MacDermid Barrett SN solution can be prepared, heated to 50 °C, and adjusted to a pH of 4.0. A standard Hull battery nickel anode is then installed in the electrolytic plating solution that is mechanically agitated. The part was then electroplated at 2.0 amps for approximately 2 minutes, rotated 180°, and electroplated at 2.0 amps for approximately another 2 minutes. The part was then removed from the solution, rinsed under running DI water; and dried at 80 ° C for 30 minutes.

雖然鎳因為其之耐蝕性而係最普遍地用於電鍍作 用中,該電解電鍍步驟可以任擇地用來在部件施上加一 層錫、銅、鋅或鉻。所有的這些金屬都可用於提供 EMI 屏蔽作用。 針對上述内容所進行的修改對於習於此藝者而 言,將會是顯而易知的,但是其不會將本發明修改至超 過隨附的申請專利範圍之範圍。 10 1291322 【圖式簡單說明】 ( 無 ) 【元件標號對照表】 ( 無 )Although nickel is most commonly used for electroplating because of its corrosion resistance, the electrolytic plating step can optionally be used to apply a layer of tin, copper, zinc or chromium to the component. All of these metals can be used to provide EMI shielding. Modifications to the above will be apparent to those skilled in the art, and the invention is not to be construed as being limited to the scope of the appended claims. 10 1291322 [Simple description of the diagram] (none) [Parts label comparison table] (none)

1111

Claims (1)

mm 89 8號專利申.請案 申請專利範圍修正本 96.07.04 拾、申請專利範圍: ----"—~ 1. 一種用於製造提供電子設備 EMI屏蔽作用的屏蔽 元件之方法,該方法包含以下步驟: a) 提供一聚合物材料薄片; b) 由該聚合物材料薄片形成一具有屏蔽元件所需 要之一三度空間幾何形狀的部件; c) 蝕刻該部件以在顯微層級下粗糙化其之表面; d) 以一催化溶液催化該部件之該表面以使得該表 面可以被無電極電鍍作用所電鍍; e) 在該部件上進行無電極電鍍作用以將一第一金 屬層沈積在其之該表面上;以及 f) 在該部件上進行電解電鍍作用以沈積一第二金 屬層於該第一金屬層上。 2. 如申請專利範圍第1項的方法,其中該聚合物材 料係選自於聚四氟乙烯、聚酯和聚丙烯所組成之群 組。 3. 如申請專利範圍第1項的方法,其中該聚合物材 料係為 AB S (丙烯睛-丁二烯-苯乙烯共聚物)。 4. 如申請專利範圍第1項的方法,其中該聚合物材 料係為 HIPS (高衝擊聚苯乙烯)。 5. 如申請專利範圍第1項的方法,其中該聚合物材 料係為 PC-ABS (聚破酸醋-丙烯腈-丁二烯-苯乙烯 共聚物)。 12 1291322 6. 如申請專利範圍第1項的方法,其中該部件係藉 由壓力模造作用而由該薄片形成。 7. 如申請專利範圍第1項的方法,其中該部件係藉 由真空模造作用而由該薄片形成。 8. 如申請專利範圍第 1項的方法,其在步驟 b)和 c) 之間更進一步包含,清洗由該聚合物材料薄片所形 成之該部件的步驟。 9. 如申請專利範圍第 8項的方法,其中該清洗步驟 包含將該部件浸在一個溶劑中。 10. 如申請專利範圍第 9項的方法,其中該溶劑是 1 -丙醇。 1 1.如申請專利範圍第1項的方法,其中該蝕刻步驟 包含將該部件浸在一鉻酸/硫酸#刻溶液中。 12. 如申請專利範圍第1 1項的方法,其中該部件在浸 泡於該蝕刻溶液之後,係在流動的去離子水下沖 洗。 13. 如申請專利範圍第1項的方法,其中該催化溶液 具有一作為催化劑之錫與把的混合物。 14. 如申請專利範圍第1項的方法,其中該催化溶液 具有一作為催化劑之選自於由纪、金、銀和翻所組 成之群組的金屬。 15. 如申請專利範圍第1項的方法,其中該無電極電 鍍作用包含將該部件浸在一無電極電鍍溶液中。 13 1291322 16. 如申請專利範圍第13項的方法,其中該無電極電 鑛溶液具有一選自於由銅、鎳、姑、銀、金和錫所 組成之群組的金屬,該金屬係被電Μ而沈積為第一 金屬層。 17. 如申請專利範圍第1項的方法,其中在一胺基磺 酸鎳溶液中的一鎳陽極係被用於該電解電鍍步驟 中,以將鎳沈積成該第二金屬層。 18. 如申請專利範圍第 1項的方法,其中一選自於由 鎳、錫、銅、鋅和鉻所構成之群組的金屬係被電解 電鑛作用沈積成該第二金屬層。 14Mm 89 No. 8 patent application. Request for patent scope revision 96.07.04 Pick up, patent application scope: ----"-~ 1. A method for manufacturing shielding elements for providing EMI shielding of electronic equipment, The method comprises the steps of: a) providing a sheet of polymeric material; b) forming a piece of the polymeric material sheet having a three dimensional spatial geometry required for the shielding element; c) etching the part to be under the microscopic level Roughening the surface thereof; d) catalyzing the surface of the part with a catalytic solution such that the surface can be electroplated by electroless plating; e) performing electroless plating on the part to deposit a first metal layer On the surface thereof; and f) performing electrolytic plating on the part to deposit a second metal layer on the first metal layer. 2. The method of claim 1, wherein the polymeric material is selected from the group consisting of polytetrafluoroethylene, polyester, and polypropylene. 3. The method of claim 1, wherein the polymer material is AB S (acrylonitrile butadiene styrene copolymer). 4. The method of claim 1, wherein the polymer material is HIPS (High Impact Polystyrene). 5. The method of claim 1, wherein the polymer material is PC-ABS (polyacetate-acrylonitrile-butadiene-styrene copolymer). The method of claim 1, wherein the component is formed from the sheet by pressure molding. 7. The method of claim 1, wherein the component is formed from the sheet by vacuum molding. 8. The method of claim 1, further comprising the step of cleaning the component formed from the sheet of polymeric material between steps b) and c). 9. The method of claim 8, wherein the cleaning step comprises immersing the component in a solvent. 10. The method of claim 9, wherein the solvent is 1-propanol. 1 1. The method of claim 1, wherein the etching step comprises immersing the component in a chromic acid/sulfuric acid solution. 12. The method of claim 11, wherein the component is washed under flowing deionized water after being immersed in the etching solution. 13. The method of claim 1, wherein the catalytic solution has a mixture of tin and a catalyst as a catalyst. 14. The method of claim 1, wherein the catalytic solution has a metal selected from the group consisting of Yuki, Kim, Silver, and Fum. 15. The method of claim 1, wherein the electrodeless plating comprises immersing the component in an electrodeless plating solution. The method of claim 13, wherein the electrodeless electromineral solution has a metal selected from the group consisting of copper, nickel, auran, silver, gold, and tin, and the metal is Electrode is deposited as a first metal layer. 17. The method of claim 1, wherein a nickel anode in a nickel sulfamate solution is used in the electrolytic plating step to deposit nickel into the second metal layer. 18. The method of claim 1, wherein a metal selected from the group consisting of nickel, tin, copper, zinc, and chromium is deposited into the second metal layer by electrowinning. 14
TW092132898A 2003-05-20 2003-11-24 Method for manufacturing an EMI shielding element TWI291322B (en)

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