TWI285448B - Light-emitting diode with high resistivity insulation structure - Google Patents

Abstract

This invention relates to a light-emitting diode (LED) with high resistivity insulation structure, which is characterized in that a high resistivity insulation structure in imaginary line between two electrodes and having depth less than the active layer is formed downwards on the surface of the p-cladding layer of the LED and/or the indium-tin-oxide (ITO) layer. The high resistivity insulation structure has high resistance in comparison with the p-cladding layer so that, when the electrodes are supplying electrical energy, the path of the active layer for the electric current to distribute and pass is increased. Therefore, over-heating on local region due to concentrated electric current on a specific region is prevented to ensure service life of the LED.

Description

1285448 IX. Description of the Invention: [Technical Field] The present invention relates to a solid-state light-emitting element, and more particularly to a light-emitting diode. [Prior Art] Since the solid-state light-emitting element has the advantages of long life, power saving, small volume, low driving voltage, fast reaction rate, high recognition rate, etc., it is one of a new generation of light source types, especially a light-emitting diode, which has been widely used. It is used in everyday life. Referring to FIG. 1 and FIG. 2, in general, the LED assembly comprises a substrate u, at least one quantum unit 12 epitaxially formed on the substrate u, and a transparent conductive layer formed on the top surface of the dice 12 Layer 13, and two electrodes 14 for supplying electric energy 〇4 substrate 11 is composed of a material whose lattice constant matches the quantum unit. For example, the quantum unit 丨2 is a gallium nitride-based semiconductor material. When the substrate 11 is a sapphire that is easy to epitaxial. The edge 5 subunit 12 is formed by epitaxial epitaxy from the top surface of the substrate 11 and has a first cladding layer 121, a second cladding layer 122, and a first and second type cladding layer. An active layer 123 between 121 and 122, the first and second type cladding layers 121 and 122 form a quantum energy barrier with respect to the active layer 123 to generate light by photoelectric effect; the first and second types are covered by each other; The layers 121 and 122 are respectively an n-type cladding layer and a p-type cladding layer; and generally, in order to improve luminous efficiency, a plurality of subunits are optimally designed, but in this example and the illustration, for clarity of explanation For the sake of illustration, only one quantum unit 12 is illustrated as 5 1285448. The transparent conductive layer 13 is made of a material that can transmit light and has a uniform current dispersion, such as indium tin oxide (referred to as ITO in the industry), so that when the electrode 14 is applied with electric energy, a current flows uniformly through the quantum unit 12 . It makes it improve luminous efficiency. The two electrodes 14 are disposed at opposite angles of the light emitting diode relative to each other, and the first type of cladding layer 121 of the quantum unit 12 and the through electrode

The conductive layer 13 is in contact with the ohmic layer, and the quantum unit 12 can be supplied with electrical energy to cause the quantum unit 12 to generate light. When electric energy is applied from the two electrodes 14, a current flows through the transparent conductive layer 13 through the quantum unit 12, and the quantum unit 丨2 generates photons by photoelectric effect, thereby causing the light-emitting diode 1 to emit light. Since the resistivity of the first type cladding layer 121 is smaller than that of the second type cladding layer i22, when electric energy is applied from the two electrodes 14, the current is relatively concentrated on the periphery of the electrode 14 and is not uniformly dispersed, and the two electrodes are used. The shortest path of the imaginary connection of 14 is dispersed (as indicated by the arrow in Fig. 2). Therefore, the glare-pole 胄1 will cause overheating of these areas due to the current dispersion being concentrated in these areas, resulting in U The operating life of the light-emitting diode i is shortened. The illuminating LEDs that need to be witnessed need to be improved to avoid the current, the problem of the emperor soil-'--------------------------------------------------- Light-emitting diodes in a specific area. The present invention can disperse current, and a high-resistance insulating structure of the light-emitting diode 1285448 pole, and a high-resistance insulation comprise a substrate, at least one quantum unit structure - the quantum unit is connected to the substrate The self-secret material has a brother-type coating layer, an active layer, and a second type coating layer, and the first and second type coating layers form a quantum energy barrier with respect to the active layer to enable the quantum unit Light is produced by the photoelectric effect. The 4 - electrodes respectively form an ohmic contact with the first and second type cladding layers, and the quantum single S can be supplied with electric energy to cause the quantum unit to generate light. Forming the high-resistance insulating structure in the second type of cladding layer between the imaginary connection of the electrode, and having a high resistivity relative to the second type of cladding layer to cause current to disperse through the activity The path at the time of the layer increases without concentration. Transparent Conductive Layer In addition, the light-emitting diode of the present invention having a high-resistance insulating structure comprises a substrate, at least one quantum unit, an electrode, and a high-resistance insulating structure. The quantum unit is connected to the substrate and from the substrate to the first type of coating layer, an active sound, and both of the layers of the stone layer, and the second type of coating layer, the second type The coating produces light with a photoelectric effect relative to the active layer shape t. 7 mils 4 can be used to connect the transparent conductive layer to the top surface of the substrate, which is opposite to the top surface of the substrate, which can transmit light and uniformly disperse the current. The two electrodes are respectively in contact with the first type of cladding layer, and can be used for the working hours of the first day. Hailizi provides electric energy to make the quantum unit produce light. The high-resistance insulating material is formed downward from the (four) bright conductive layer and located between the 7 1285448 two-electrode imaginary connection, and has high power relative to the transparent conductive layer. The path when the current is dispersed through the active layer is increased without concentration. What is the effect of the invention? a type of cladding layer, and/or a two-flow dispersion path of a high-resistance insulating structure formed downward from the surface of the transparent layer and having a depth less than the active layer, and the hetero-energy band of the quantum element is selected, and the tunneling effect is reduced. The current is not over-concentrated and causes localized areas to ensure the life of the light-emitting diode. money

The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments of the accompanying drawings. Before the present invention is described in detail, it is to be noted that in the following description, similar elements are denoted by the same reference numerals. Referring to FIG. 3 and FIG. 4, the present invention - a preferred embodiment of a light-emitting body 2 having a high-resistance insulating structure, comprises a substrate 21, at least: insect crystals are formed on the substrate 21 The upper quantum unit 22, the second electrode 24 for supplying electrical energy, and the high-resistance insulating structure 3. / Substrate 21A is a material whose lattice constant is matched with the quantum unit 22; for example, when the quantum unit 22 is a semiconductor material of a nitride-based system, the substrate 21 is easy to be stupid Crystal sapphire. The quantum unit 22 is epitaxially formed from the top surface of the substrate 21, and has a first cladding layer 221, a second cladding layer 222, and an activity between the first and second cladding layers 221 and 222. The layer 223, the first and second plastic coatings 221 222 form a quantum energy barrier with respect to the active layer 223, and can generate light by the electrical effect of the light 12 1285448; the first and second type cladding layers 221 and 222 are respectively n-type slopes. Layer and P-type cladding layer; and, in order to improve luminous efficiency, the complex number of subunits are optimally designed, but in this example and the illustration, for the sake of clarity, only one quantum unit is used. 22 is an example. The two electrodes 24 are disposed opposite to each other on the quantum unit=first type cladding I 221 and the second type cladding layer 222, respectively, and the second type of coatings 221 and 222 are opposite to each other. Contact, but can be w

Element 22 provides electrical energy to cause the quantum unit 22 to produce light. The high-resistance insulating structure 3 is formed in the second type of coating layer milk and located between the imaginary lines of the two electrodes 24, and the phase 222 is in the form of a Gu Gu ~ Di-type coating / ... Rate, such that the current is increased along the longer path of the imaginary line connecting the two electrodes 24 from the high resistance state (not shown in the figure) through the quantum unit 22'. The heterogeneous energy level band of the quantum unit 22 is increased and worn: "There should be a reduction in the current, so that the current is not excessively concentrated, causing a local area to pass through ^ to ensure the working life of the light-emitting diode 2. ^ 13... In this example, the high-resistance insulating structure 3 is formed from the surface of the second layer 222 to a depth of 1000A to 70%, and the air is relatively high in resistivity with respect to the second type of cladding 4 222. , the effect of increasing the path by the current dispersion; of course, for example, in the second: filling the resistivity is relatively higher than the second type of coating, or not forming the groove first, directly in the second type ^ = The corresponding position of the doping concentration and depth of the resistive material can also cause the current to be dispersed in the path indicated by the arrow in the figure. .1285448 Although the subunit 22 can further increase the path of current dispersion, In turn, the electricity "丨L is not excessively exposed to the wood, causing local overheating to ensure the working life of the light-emitting diode 2. Similar to the conventional light-emitting diode 1, when electric energy is applied from the two electrodes 24, The current dispersion flow passes through the quantum single & 22, and the quantum unit 22 generates photons by the light fast effect, thereby causing the light emitting diode 2 to emit light outward.

In the process of current dispersion, because the resistivity is relatively higher than that of the high-resistance insulating structure 3 of the ▲-type cladding $221, the current will be relatively far from the 4 冋 悲 绝缘 3 The two ends of the imaginary connection of the two electrodes are separated from the active layer 223 by a relatively long path with respect to the imaginary connection of the two electrodes 24, so that the current is not excessively concentrated and the local area is overheated, thereby ensuring the light emission. The working life of the polar body 2. Referring to FIG. 5 and FIG. 6, a second preferred embodiment of a light-emitting diode 2 having a high-resistance insulating structure comprises a substrate 21 on which at least one crystallite is formed. The quantum single a 22, a transparent conductive layer 4 formed on the top surface of the quantum unit 22, two electrodes 24 for supplying electrical energy, and a high-resistance insulating structure 3. The substrate 21 is composed of a material whose lattice constant matches the quantum unit 22. For example, when the quantum unit 22 is a gallium nitride-based semiconductor material, the substrate 21 is a sapphire which is easy to be epitaxial. . The quantum unit 22 is formed from the top surface of the substrate 21 and has a --type cladding layer 221, a second-type cladding layer 222, and a first-type batch layer 221, 222. The active layer 223, the first and second type cladding layers 221, 222 form a quantum energy barrier with respect to the active layer 223, and can generate light by the electrical effect of the light 10 1285448; the first and second type cladding layers 221, 222 are respectively n The type of cladding layer and the p-type cladding layer, and generally, to improve the luminous efficiency, the plurality of subunits are optimally designed, but in this example and the illustration, for the sake of clarity, only one quantum is used. Unit 22 is taken as an example. The transparent conductive layer 4 is made of a material that can transmit light and has a uniform current dispersion, such as indium tin oxide (known in the industry as ITO), and can be used as an electrode.

When electrical energy is applied 24, current flows uniformly through the quantum unit 22 to enhance the luminous efficiency. The two electrodes 24 are respectively disposed on the first type of cladding layer 221 of the quantum unit 22 and the transparent conductive layer 4, and are in contact with the transparent layer 4 and the transparent conductive layer 4 The quantum unit 22 can be supplied with electrical energy to cause the quantum unit 22 to generate light. The transparent conductive layer 3 is formed from the transparent conductive layer 1 , and is deeper at 1000A 70000 A, and is located between the imaginary lines of the two electrodes 24, and (4) the transparent conductive layer 4 and the second type of cladding layer 222. Having a high resistivity 'the current is passed through the quantum unit 22 along a longer path (shown by an arrow in the figure) along the imaginary line from the high-resistance insulating structure 3 relatively far from the two electrodes 24 'In turn, the path of current dispersion is increased, and the heterogeneous energy level band of the subunit 22 is increased, and the wear-through effect is reduced, so that the Hong machine is not excessively concentrated to create the working life of the body 2. The area of the ... is overheated, ensuring that the light-emitting diode is in this example, and the high-resistance state is formed. The edge, the 〇 structure, the 〇 疋 自 自 自 自 自 自 自 自 自 自 自 自 自 自 自 自 自 自 自 自 自 自 自 自 自 自^, t the groove of the cladding layer 222, the thickness of the current dispersion path is achieved by the *milk relative to the transparent conductive layer 4, the complex-type cladding layer 222 having a high resistivity, 1285448; For example, in the groove, the resistivity is relatively higher than that of the transparent conductive layer 4 and the second type of 汲 s 222, or is directly doped with a predetermined concentration and depth without forming a groove. Impurities have formed such high-resistance insulating structures, which can also increase the privately dispersed path, thereby preventing the current from being excessively concentrated and causing local area overheating, and ensuring the working life of the light-emitting diode 2.

In addition, the depth of the high-resistance insulating structure 3 may be located only in the transparent transparent layer 4 or deeper down to the second-type cladding layer 22, but the active layer (2) may not be contacted regardless of the depth. In order to avoid a short circuit, the light-emitting diode 2 becomes a waste product. Similarly, in the above example, when electric energy is applied from the two electrodes 24, a current flows through the transparent conductive layer 4 through the quantum unit 22, so that the quantum unit 22 generates photons by photoelectric effect, thereby causing the light-emitting diode. 2 illuminating outward; and in the current dispersion, because the high-resistance insulating junction is blocked by the 冓3, the current can be made at both ends of the imaginary connection from the high-resistance insulating structure 3 relatively far from the two-electrode Μ Dispersing through the activity | 223, so that the current is not excessively concentrated, causing local area overheating, ensuring the working life of the light-emitting diode 2. In view of the above description, it can be seen that the light-emitting diode 2 of the present invention is opposite to the second-type cladding layer 222, and/or the transparent conductive layer 4 has a high-resistivity resistive insulating structure 3' such that when electric energy is applied by the electrode 24. The current is: a long path from the two ends of the imaginary connection of the high-resistance insulating structure 3 _ away from the two electrodes 24, and then the heterogeneous energy level of the waiter is as early as 22 The mouth and tooth steepness effect is reduced' and the charge density can be evenly distributed.

1285448 The flow does not over-concentrate on the recursive p 0 r^ ^ Wei R special field, which can improve the conventional polar body 1 current will be relatively concentrated on the electrode 14, x - 4 electrode 14

Imaginary connection, etc., which leads to overheating of some areas, thereby shortening the shortcomings of the maintenance μ, and indeed achieves the creative purpose of the present invention. ! The above is only the preferred embodiment of the present invention, and the scope of the present invention can be limited thereto, that is, the simple equivalent change according to the scope of the present invention and the description of the invention. And modifications: are still within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a conventional light-emitting diode; FIG. 2 is a plan view for explaining the light-emitting diode of FIG. 3; FIG. 3 is a cross-sectional view showing the present A first preferred embodiment of the invention discloses a light-emitting diode having a high-resistance insulating structure; FIG. 4 is a plan view for explaining the light-emitting diode of FIG. 3; FIG. 5 is a cross-sectional view showing the present invention. A second preferred embodiment of a light-emitting diode of a high-resistance insulating structure; and FIG. 6 is a top view of the light-emitting diode of FIG. 13 1285448

[Main component symbol description] 1 Light-emitting diode 21 Substrate 11 Substrate 22 Quantum unit 12 Quantum unit 221 First-type cladding layer 121 First-type cladding layer 222 Second-type cladding layer 122 Second-type cladding layer 223 Active layer 123 active layer 24 electrode 13 transparent conductive layer 3 high resistance insulating structure 14 electrode 4 transparent conductive layer 2 light emitting diode

14

Claims (1)

1285448 X. Patent application scope: 1 · A light-emitting diode having a high-resistance insulating structure, comprising: a substrate; at least one quantum unit 'connected to the substrate and sequentially having a first from the substrate a coating layer, an active layer, and a second type of cladding layer, the first and second type cladding layers form a quantum energy barrier with respect to the active layer to enable the quantum unit to generate light by a photoelectric effect; Forming an ohmic contact with the first and second type of cladding layers and supplying power to the 5 mile subunit to cause the quantum unit to generate light; - Auntie thinks that the formation is in the second type of cladding layer and Located between the two electrode imaginary wires, and having a south resistivity relative to the second type of cladding layer, the path when the current is dispersed through the active layer is increased and not concentrated. 2. The light-emitting diode of the high-resistance insulating structure according to the scope of the patent application, wherein the high-resistance insulating structure comprises a surface formed downward from the surface of the second-type cladding layer and having a depth in the surface A The groove between ~7G_A. The present invention has a high-resistance insulating structure I: a first-pole body, wherein the high-resistance insulating structure includes a surface formed downward from the surface of the second-type cladding layer, a groove of between 1000A and 70,000 people, and a cavity filled with the surface resistivity of the second layer of the coating. material. 4. In accordance with the scope of the patent application, item i, 15, 1585448, a light-emitting one, wherein the high-resistance insulating structure is doped downward from the surface of the second type of cladding layer by a predetermined concentration Impurities and a depth of between 1,000 and 70000 A. A light-emitting diode having a high-resistance insulating structure, comprising: a substrate; at least one quantum unit connected to the substrate and sequentially having a first type of cladding layer and an active layer from the substrate And a second type of coating The first and second type cladding layers form a quantum energy barrier with respect to the active layer to enable the quantum unit to generate light by a photoelectric effect; a transparent conductive layer connected to the top of the quantum unit opposite to the substrate On the surface, the light is permeable and the current can be uniformly dispersed. The conductive layer phase sub-unit produces an electrode, and the first type of cladding layer and the transparent ohmic connection respectively, and the quantum unit can be supplied with electric energy to make the quantity Raw light; and a barrier state insulating structure, wherein a current is dispersed from the imaginary connection between the two electrodes, and the current is dispersed through the middle 0. The transparent conductive layer is formed downward and has a high active layer with respect to the transparent conductive layer. Addition and not set 6. According to the patent application range, the light-emitting diodes, wherein the surface of the conductive layer forms a groove downward. - The high-resistance insulating structure having a high-resistance insulating structure includes a concave from the transparent and having a depth of between 1000A and 70,000A. According to the patent application scope, the light-emitting diode, wherein the high-resistance insulating structure having the high-resistance insulating structure includes: - the surface of the conductive layer formed from the transparent 16 1285448 is formed downward and the depth is ΙΟΟΟΑ~70000 A groove between the groove and a high-resistance material having a resistivity relatively higher than that of the transparent conductive layer. 17