CN111048639B - Front-mounted integrated unit light-emitting diode - Google Patents
Front-mounted integrated unit light-emitting diode Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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Abstract
The invention relates to the field of semiconductor material and device process, in particular to a semiconductor photoelectric device. The invention provides a forward integrated unit light-emitting diode, which comprises a plurality of diode units, and a first conductive type electrode and a second conductive type electrode which are arranged between the diode units, wherein the first conductive type electrode and the second conductive type electrode are arranged in an overlapped mode in a spacing area between the diode units. The invention solves the technical problem that the structure of the diode in the prior art is greatly limited in three important parameters of lumen efficiency, lumen density output and lumen cost, improves the lumen output of a chip in unit area and reduces the lumen cost.
Description
Technical Field
The invention relates to the field of semiconductor material and device process, in particular to a semiconductor photoelectric device.
Background
The conventional forward-mounted integrated unit light-emitting diode has uneven current diffusion, which causes the loss of luminous efficiency, the heat dissipation of a diode chip in the conventional structure is realized by a sapphire substrate, and the heat dissipation is poor, so that the efficiency and the stability of the chip are influenced, therefore, the main application field of the forward-mounted light-emitting diode chip is a medium-small power chip market below 0.5 watt, and a product with high lumen output per unit area cannot be provided. The non-uniformity of current diffusion, the non-uniformity of heat diffusion and the non-uniformity of light extraction cause the current to have great limitations on three important parameters of lumen efficiency, lumen density output and lumen cost, and the forward-mounted light-emitting diode technology in the current market cannot provide an effective solution.
One prior art is U.S. patent application publication No. US6614056B1, shown in fig. 1, 21/23 being an n-type electrode and 19/20ab being a p-type electrode. The mechanism of current diffusion is as follows: and after the ITO and the p-GaN form ohmic contact, 19/20ab metal is deposited on the ITO, holes are diffused to the p-GaN in a metal wire mode and reach the quantum well active region, and electrons diffused from the quantum well active region and the 21/22 n-type electrode emit light through radiation recombination to obtain the light-emitting LED device. By adopting ITO transparent conductive ohmic contact and a current diffusion mode of a metal lead, the total current diffusion is very uneven because the ITO resistivity is high and the conductivity of the p-type GaN material is poor. In addition, because the current diffusion length of the LED chip is inversely proportional to the square root of the current density, under the condition of high-current injection, the current diffusion length is shorter, so that the current diffusion of the chip is more uneven, the efficiency is lower, and the heat dissipation is more difficult.
Disclosure of Invention
The invention provides a forward-mounted integrated unit light-emitting diode with high lumen efficiency and high lumen density output, aiming at solving the technical problem that three important parameters of the lumen efficiency, the lumen density output and the lumen cost of a diode structure in the prior art are greatly limited.
To achieve the above object, the present invention provides a forward integrated cell light emitting diode including a plurality of diode cells, and first and second conductive type electrodes disposed between the diode cells, wherein the first and second conductive type electrodes are disposed to overlap in a spaced region between the diode cells.
And each second conductive type electrode is correspondingly embedded with one first conductive type electrode and is separated by an insulating layer.
The light-emitting diode comprises a first conduction type semiconductor layer, a quantum well active region and a second conduction type semiconductor layer, wherein the quantum well active region is positioned on the first conduction type semiconductor layer, the second conduction type semiconductor layer is positioned on the quantum well active region, the first conduction type semiconductor layer, the quantum well active region and the second conduction type semiconductor layer are arranged in a step shape to form a diode unit, a first conduction type electrode is positioned on the first conduction type semiconductor layer at the periphery of the diode unit, and a second conduction type electrode is arranged at the periphery of the diode unit in an overlapping mode with the first conduction type electrode and is separated by an insulating layer.
Wherein the forward integrated unit light emitting diode further includes a transparent electrode on the second conductive type semiconductor layer, the second conductive type electrode being in contact with the transparent electrode.
Wherein the insulating layer partially covers the transparent electrode, and the second conductive type electrode further partially covers the transparent electrode.
Wherein the first conductivity type electrode and the second conductivity type electrode are an n-electrode and a p-electrode, respectively.
Wherein the first conductivity type electrode and the second conductivity type electrode are formed of finger line structures.
The first conductive type electrode and the second conductive type electrode are made of strip-shaped metal and/or indium tin oxide materials.
The first conductive type electrodes and the second conductive type electrodes extend along the length direction of the integrated unit light emitting diode, and the first conductive type electrodes and the second conductive type electrodes are arranged at intervals along the width direction of the integrated unit light emitting diode.
The first conductive type electrode and the second conductive type electrode are finger line structures extending oppositely. .
The forward-mounted integrated unit light-emitting diode adopted by the invention breaks through the limitation of the existing forward-mounted LED technology in three aspects of light, electricity and heat through the nanometer-micrometer size structure effect. The size design of the unit chip is controlled within the current diffusion length, and the geometric optimization design mode with higher degree of freedom can simultaneously solve the problem of uneven current diffusion of an n-electrode and a p-electrode which troubles the design of an LED chip, thereby obtaining higher photoelectric conversion efficiency/lumen efficiency; the nano-micro structure of each diode unit can increase the light-emitting area of the side wall, thereby improving the light extraction efficiency; the reduction of unit chip size brings bigger lateral wall heat radiating area, possesses better heat radiating performance, can allow the injection of super large current density and not influence its stability to very big improvement unit area chip's lumen output reduces the lumen cost.
Drawings
FIG. 1 is a prior art light emitting diode chip structure diagram;
FIG. 2 is a front cross-sectional view of a front integrated unit LED according to one embodiment of the present invention;
FIG. 3 is a front cross-sectional view of a forward-mounted integrated unit LED according to a second embodiment of the present invention;
fig. 4 is a front cross-sectional view of a forward-mounted integrated unit light-emitting diode according to a third embodiment of the present invention;
FIG. 5 is a side cross-sectional view of a forward-mounted integrated unit LED provided in accordance with a fourth embodiment of the present invention;
FIG. 6 is a side cross-sectional view of a forward integrated unit LED provided in accordance with a fourth embodiment of the present invention;
FIG. 7 is a front cross-sectional view of a front mounted integrated unit LED provided by the present invention;
FIG. 8 is a front cross-sectional view of a front mounted integrated unit LED provided by the present invention;
FIG. 9 is a front cross-sectional view of a front mounted integrated unit LED provided by the present invention;
FIG. 10 is a front cross-sectional view of a front mounted integrated unit LED provided by the present invention;
FIG. 11 is a front cross-sectional view of a front mounted integrated unit LED provided by the present invention;
FIG. 12 is a front cross-sectional view of a front mounted integrated unit LED provided by the present invention;
FIG. 13 is a side cross-sectional view of a front mounted integrated unit light emitting diode provided by the present invention;
FIG. 14 is a circuit diagram of a forward integrated unit LED provided by the present invention;
FIG. 15 is a front cross-sectional view of a front mounted integrated unit light emitting diode provided by the present invention;
FIG. 16 is a side cross-sectional view of a front-mounted integrated unit light emitting diode provided by the present invention;
the LED chip comprises an n electrode 1, a p electrode 2, a mesa structure 3, an insulating layer 4, a p-type gallium nitride material (p-GaN)5, a quantum well active region 6, an n-type gallium nitride material (n-GaN)7, an intrinsic gallium nitride material (u-GaN)8, a substrate 9, a reflector 10, a transparent conductive electrode 11 and a connecting metal 12, and a 6V high-voltage LED chip unit 13.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the scope of the present invention.
In view of the great limitations of the three important parameters of the existing diode structure, namely, the lumen efficiency, the lumen density output and the lumen cost, the embodiment of the invention provides a forward-mounted integrated unit diode with high lumen efficiency and large lumen density output. The invention can also adopt GaAs, GaAsP, AlGaInP quaternary system materials and other material systems.
First, the design of the chip unit is defined, and as shown in fig. 7, the units of the chip are distributed according to the unit arrangement of J × K, in the example of fig. 7, J is 6, and K is 10. In any of the other designs, J ═ 1, 2, 3., 10000; k ═ 1, 2, 3.., 10000.
The electrode distribution of the A series is defined as the distribution that the n/p electrodes do not overlap in the vertical direction, and the following five designs can be named as A1, A2, A3, A4 and A5 respectively. In the A series, the arrangement mode of finger lines is defined, and the n/p electrodes are arranged in a finger-like crossed manner. As in the a1 distribution, the p-electrode includes 3 wires and the n-electrode includes 4 wires. In any other design, L p-electrode finger lines and M n-electrode finger lines may be included, and M-L +1, or L-1, or L-2, or L-3, or L-4, or L-5. The list of specific arrangements of L, M is exhaustive in view of the fact that n-electrode diffusion does not require the above-mentioned number of finger lines to meet the requirements.
As shown in fig. 7, for a parallel electrode distribution design; as shown in fig. 8, for the n-current diffusion enhanced electrode distribution design, three sides of each unit are surrounded by n-electrodes, and the other side is a p-electrode; as shown in fig. 9, for the p-current diffusion enhanced electrode distribution design, three sides of each unit are surrounded by p-electrodes, and the other side is an n-electrode; as shown in fig. 10, each cell has two sides surrounded by n-electrodes and two sides surrounded by p-electrodes for an n/p current diffusion balanced type electrode distribution design.
As shown in fig. 11, for an n/p current diffusion balanced electrode distribution design, both sides of each cell are surrounded by n-electrodes and both sides are surrounded by p-electrodes.
The above is a distributed design for np electrode separation, and the following is a design for increasing the overlap of n/p electrodes.
The electrode distribution of B series is the overlapped distribution of N/P electrodes in the vertical direction, the electrodes are separated by a layer of insulating layer which is inserted in the middle, and the electrodes can be respectively named as B1, B2, B3, B4 and B5 similarly according to the A series.
For example, like the B1 design with a1 parallel arrangement, as shown in fig. 12, which is a schematic design diagram of n/p electrode overlap, 7 p-electrode lines arranged transversely are shown, one n-electrode line is buried under each horizontal p-electrode line, and the n-electrode lines extend to the edge of the left LED unit. As shown in FIG. 13, for the side view of this design, the n/p electrodes are separated by an insulating layer 4, which may be silicon oxide (SiO)2) Silicon nitride (SiNx), aluminum oxide (Al)2O3) Or a combination of the three materials; the thickness of the insulating layer is 0.02-2 microns, and the insulating layer is prepared by deposition in a PECVD (plasma enhanced chemical vapor deposition) or ALD (atomic layer deposition) mode.
The following is an example of a 6V high voltage integrated unit light emitting diode (ic-LED) chip design, where every two chip units are connected in series to form a 6V high voltage chip unit, and every 6V high voltage chip unit is connected in parallel, and a circuit diagram thereof is shown in fig. 14.
As shown in fig. 15, which is a chip design diagram of a 6V high voltage integrated unit light emitting diode (ic-LED), a 6V high voltage LED chip unit 13 is marked, each unit is insulated from each other, an n-type gallium nitride (n-GaN) material platform 7 is exposed for each unit, and an n electrode of a left chip and a p electrode of a right chip are connected in series through an intermediate bridge metal. The 6V high-voltage LED chip units 13 are mutually connected in parallel, so that even if one group of units is necrotic, the luminescence of the whole chip is not influenced; and the larger the number of the chip units is, the smaller the influence of a certain necrosis point on the whole integrated unit light emitting diode (ic-LED) is, thereby greatly enhancing the robustness of the chip. As shown in fig. 16, a cross-sectional view of each 6V high voltage LED chip unit 13 is shown, wherein a connecting metal 12 is used for series connection between the two units.
Through the design of the 6V high-voltage integrated unit light emitting diode (ic-LED) chip, the design can also be expanded to various high-voltage integrated unit light emitting diode (ic-LED) chips such as 9V, three units connected in series, 12V, four units connected in series, 36V, 108V, 216V and the like, and all extended series and parallel chip structure designs are covered.
Example one
The present embodiment provides a forward integrated unit led, as shown in fig. 2, including:
the diode comprises a P-type electrode 1, an N-type electrode 2 and a diode mesa structure 3, wherein the diode mesa structure 3 comprises 6 rows of 102 triangular diode units which are uniformly distributed in equal size.
The Indium Tin Oxide (ITO) has large resistivity, and the P-type GaN material has poor conductivity, so that the current diffusion is not uniform. In the embodiment, a current diffusion mode of ITO and metal wires is adopted, and in a forward integrated unit light-emitting diode structure, diode mesa structures are arranged in a triangular mode and have the size of 0.1-200 microns, and the size of the mesa structures is smaller than the diffusion length of current injection. The electrode material adopts non-light absorption materials such as ITO/Al/Ag and the like to improve the light efficiency, the width of the finger line is 0.1-20 microns, and the thickness of the finger line is 0.1-10 microns.
Because the current diffusion length of the diode chip is inversely proportional to the square root of the current density, the current diffusion length is shorter under the injection of large current, so that the current diffusion of the chip is more uneven, the efficiency is lower, and the heat dissipation is more difficult. By adopting the structural design of the forward integrated unit light-emitting diode, the size and the shape of a mesa structure of the diode can be flexibly changed, the optimal current diffusion and heat dissipation performance under the appointed working current can be obtained, and the injection current density of the chip is greatly improved, so that the lumen output of a unit area is improved.
Example two
The present embodiment provides a forward integrated unit led, as shown in fig. 3, including:
the diode comprises a P-type electrode 1, an N-type electrode 2 and a diode mesa structure 3, wherein the diode mesa structure 3 comprises 6 rows of 52 square diode units which are uniformly distributed in equal size.
The diode mesa structure 3 adopts a square diode unit arrangement, the length is 0.1-200 microns, and in order to have better current diffusion performance, the mesa structure length is smaller than the diffusion length of current injection. The electrode material adopts non-light absorption materials such as ITO/Al/Ag and the like to improve the light efficiency, the width of the finger line is 0.1-20 microns, and the thickness of the finger line is 0.1-10 microns.
The design structure can obtain the optimal current diffusion and heat dissipation performance under the appointed working current, and greatly improve the injection current density of the chip, thereby improving the lumen output of unit area, and the working current density range of the forward-mounted integrated unit light-emitting diode for illumination application is more than 1A/mm2And the current working range is higher than that of the conventional light-emitting diode chip.
EXAMPLE III
The present embodiment provides a forward integrated unit led, as shown in fig. 4, including:
the diode comprises a P-type electrode 1, an N-type electrode 2 and a diode mesa structure 3, wherein the diode mesa structure 3 comprises 6 rows of 6 rectangular diode units which are not equal in size and are uniformly distributed.
The diode mesa structure 3 adopts rectangular diode unit arrangement, the length of the narrowest part of the rectangle is 0.1-200 microns, in order to have better current diffusion performance, the mesa structure length is smaller than the diffusion length of current injection. The design structure can obtain the optimal current diffusion and heat dissipation performance under the appointed working current, and greatly improves the injection current density of the chip, thereby improving the lumen output of unit area.
Example four
The present embodiment provides a forward integrated unit led, as shown in fig. 5 and 6, including:
the diode comprises a P-type electrode 1, an N-type electrode 2, a diode mesa structure 3, an insulating medium layer 4, a P-type gallium nitride material (P-GaN)5, a quantum well active region 6, an N-type gallium nitride material (N-GaN)7, an intrinsic gallium nitride material (u-GaN)8, a substrate 9, a back reflector 10 and a transparent conductive electrode 11. The substrate 9 can be a planar substrate or a patterned substrate, and the substrate material is sapphire, silicon carbide, gallium nitride, aluminum nitride, gallium oxide or silicon; the back mirror 10 may be an Al or DBR mirror. The mesa structure 3 is the upper part of the substrate. As shown in FIG. 6, the schematic areas of the p-electrode and the n-electrode are reserved for bonding gold wires.
The conventional forward-mounted integrated unit light-emitting diode product of 0.5W has the driving current of 150mA and the driving current density of 0.7A/mm2Left and right. In the present invention, the drive current of the 0.5W LED of the front integrated unit is 1.5A/mm2In the above, each led unit can bear a current density more than 2 times that of a conventional front-mounted led product. For example, when the driving current exceeds 150mA, the voltage VF of the normally-mounted LED chip rises sharply due to the non-uniform current diffusion, and the thermal effect is very significant, so that the chip cannot bear the driving of a large current; while the corresponding integrated cell light emitting diode (ic-LED) chip driving current can be increased to over 600mA with a small increase in the contrast voltage VF. Integrated unit light emitting diodes (ic-LEDs) can therefore withstand current densities several times higher than that of a forward-mounted LED, bringing the advantages of tremendous lumen density and lumen cost.
The advantages of the enormous lumen density and lumen cost of integrated unit light emitting diode (ic-LED) chips are illustrated here first by 0.5W LED chips. In addition, the point to be emphasized is that the normally installed LED chip can only be used for 0.5W output products due to the difficulty of current diffusion and heat dissipation. However, the integrated unit light emitting diode (ic-LED) product with the same size can drive the current of more than 600mA and actually reaches the driving power of 2W, so the lumen output of the chip can be more than 4 times of that of a normally-installed product, and the ultrahigh lumen density output which is not possessed by the normally-installed medium and small power LED product is realized.
In summary, the forward integrated unit light emitting diode provided by the embodiment of the invention has the following beneficial effects:
(1) the length design of the diode unit is controlled within the current diffusion length, the optimized geometric design with certain degree of freedom can further improve the light emitting efficiency, and the problem of uneven current diffusion of an n-electrode and a p-electrode, which troubles the design of an LED chip, can be solved simultaneously, so that higher photoelectric conversion efficiency/lumen efficiency is obtained;
(2) according to the invention, the light-emitting area of the side wall is increased by the micro-nano structure of each diode unit, so that the light extraction efficiency is improved;
(3) the size of the integrated unit light-emitting diode is reduced, so that a larger side wall heat dissipation area is brought, the integrated unit light-emitting diode has better heat dissipation performance, injection of super-large current density is allowed, the stability of the integrated unit light-emitting diode is not influenced, the lumen output of a chip in unit area is greatly improved, and the lumen cost is reduced;
(4) the integrated unit light emitting diode is suitable for LED products of various color systems such as UVC, UVA, UVB, purple light, blue light, green light, yellow light, red light, infrared light and the like, and can be used in the application fields of LED illumination, backlight, display, plant illumination, medical treatment and other semiconductor light emitting devices.
The above-mentioned embodiments, objects, technical solutions and advantages of the present invention are further described in detail, it should be understood that the above-mentioned embodiments are only examples of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. A forward integrated unit light emitting diode is characterized by comprising a plurality of diode units, and a first conduction type electrode and a second conduction type electrode which are arranged between the diode units, wherein the first conduction type electrode and the second conduction type electrode are arranged in an overlapped mode in a spacing area between the diode units;
the diode units form a diode mesa structure, and the size of the diode mesa structure is smaller than the current diffusion length;
two adjacent diode units are connected in series to form a high-voltage LED chip unit, and the two adjacent high-voltage LED chip units are connected in parallel.
2. The forward-mounted integrated cell light emitting diode of claim 1, wherein each of the second conductivity type electrodes has a corresponding one of the first conductivity type electrodes embedded therein and separated therefrom by an insulating layer.
3. The forward integrated unit led of claim 2, comprising a first conductive type semiconductor layer, a quantum well active region and a second conductive type semiconductor layer, wherein the quantum well active region is located on the first conductive type semiconductor layer, the second conductive type semiconductor layer is located on the quantum well active region, the first conductive type semiconductor layer, the quantum well active region and the second conductive type semiconductor layer are stepped to form the diode unit, the first conductive type electrode is located on the first conductive type semiconductor layer at the periphery of the diode unit, and the second conductive type electrode is located at the periphery of the diode unit to overlap the first conductive type electrode and is separated by the insulating layer.
4. The forward integrated cell light emitting diode of claim 3, further comprising a transparent electrode on the second conductivity type semiconductor layer, the second conductivity type electrode being in contact with the transparent electrode.
5. The forward integrated cell light emitting diode of claim 4, wherein the insulating layer partially covers the transparent electrode, and the second conductivity type electrode further partially covers the transparent electrode.
6. The forward mounted integrated cell light emitting diode of claim 1, wherein said first conductivity type electrode and said second conductivity type electrode are an n-electrode and a p-electrode, respectively.
7. The forward integrated cell light emitting diode of claim 1, wherein the first and second conductivity type electrodes are comprised of finger line structures.
8. The forward integrated cell light emitting diode of claim 1, wherein the first and second conductivity type electrodes are formed from a wire metal and/or indium tin oxide material.
9. The front-mounted integrated unit light emitting diode according to claim 1, wherein the first conductivity type electrodes and the second conductivity type electrodes extend in a longitudinal direction of the front-mounted integrated unit light emitting diode, respectively, and are spaced apart from each other in a width direction of the front-mounted integrated unit light emitting diode.
10. The forward integrated cell light emitting diode of claim 9, wherein the first and second conductivity type electrodes are finger line structures extending in opposite directions.
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| CN201911253699.1A CN111048639B (en) | 2019-01-31 | 2019-01-31 | Front-mounted integrated unit light-emitting diode |
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| CN201911253699.1A CN111048639B (en) | 2019-01-31 | 2019-01-31 | Front-mounted integrated unit light-emitting diode |
| CN201910100384.7A CN109817781A (en) | 2019-01-31 | 2019-01-31 | A kind of formal dress integrated unit light emitting diode |
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| CN112993115B (en) * | 2019-12-17 | 2022-12-27 | 深圳第三代半导体研究院 | Light-emitting diode |
| CN112993114A (en) * | 2019-12-17 | 2021-06-18 | 深圳第三代半导体研究院 | Light-emitting diode |
| CN112992957A (en) * | 2019-12-17 | 2021-06-18 | 深圳第三代半导体研究院 | Light-emitting diode |
| CN113036012B (en) * | 2019-12-25 | 2022-09-06 | 深圳第三代半导体研究院 | High light-emitting rate integrated unit diode chip |
| US20230118125A1 (en) * | 2021-10-18 | 2023-04-20 | Hamamatsu Photonics K.K. | Optical semiconductor element |
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| CN109817781A (en) | 2019-05-28 |
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