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•【發明所屬之技術領域】 h本發明係有關一種鑽石研磨墊整理器之製造方法，特 別是關於一種可控制鑽石露出量之鑽石研磨墊整理器 造方法。 $ 技術】 學機械研磨（Chemi 晶圓表面的材質， 物質的機械式研磨 可讓晶圓表面達到 進行，為一種將工 利用相對運動加工 給到工件上，當工 超微磨粒（直徑100 之凸部進行選擇性 學機械抛光。 化學機械研磨製程 在研磨墊上，並帶 旋轉，當進行研磨 晶圓與研磨墊間。 磨墊是一個重要消 化，異於傳統光學 用即要將晶圓表面 若研磨墊過軟，則 【先前 化 可移除 研磨性 用，將 沉積之 墊上， 工液供 時供給 對工件 光或化 在 晶圓壓 的方向 被置於 研 是平垣 化的作 坦化。 cal Machine Polishing ； CMP) 讓晶圓表面變得更平坦，且具有 與酸鹼溶液的化學式研磨兩種作 全面性的平坦化，以利後續薄膜 件壓在旋轉之彈性襯墊，即研磨 之拋光技術。將具有腐蝕性之加 件進行腐蝕加工（化學性）時，同 奈米以下）抛光（機械性）材料， 的抛光操作，故稱機（械）化學拋 的硬體設備中，研磨頭被用來將 動晶圓旋轉，而研磨墊則以相反 時，由研磨顆粒所構成的研漿會 耗材’由於積體電路製程的目的 玻璃與矽晶圓的拋光作用，平坦 輪廓凸出部份削平，達到全面平 谷易因變形而形成平坦度較差的• [Technical field to which the invention pertains] h The present invention relates to a method of manufacturing a diamond polishing pad finisher, and more particularly to a diamond polishing pad finisher method for controlling the amount of diamond exposure. $Technology】 Learn mechanical grinding (the material of the surface of Chemi wafer, the mechanical grinding of the material can make the surface of the wafer reach the work, for a kind of work to use the relative motion processing to the workpiece, when the superfine abrasive grain (diameter 100) The convex part is selectively mechanically polished. The chemical mechanical polishing process is on the polishing pad and rotates between the polishing wafer and the polishing pad. The polishing pad is an important digestion, which is different from the traditional optical use. If the polishing pad is too soft, then [previously, the abrasive property can be removed, and the time required for the supply of the working fluid to be applied to the workpiece or the wafer in the direction of the wafer pressure is flattened. Machine Polishing; CMP) makes the surface of the wafer flatter and has a comprehensive flattening with chemical polishing of acid-base solution to facilitate the subsequent pressing of the film member on the rotating elastic pad, ie polishing polishing technology When the corrosive additive is subjected to corrosion processing (chemical), the polishing operation of the polishing (mechanical) material is the same as the polishing of the material. In a chemical polishing hardware device, the polishing head is used to rotate the moving wafer, and the polishing pad is in the opposite direction, the slurry composed of the abrasive particles will be used for the purpose of the integrated circuit process for the glass and silicon wafers. Polishing effect, the flat contour is partially flattened, and the flat louver is easily deformed to form a flatness.
第5頁 1283614 -^―__案號94115045_年月 a 修正 _ i、發明說明（2) .現象。在研磨過程中，研磨墊表面材質也會耗損、變形， 另外表面堆積的反應物也需妥當的排除，因此在使用中， 如無適當的處理，研磨墊表面將呈現快速老化，造成移除 率衰退等現象，為了解決研磨墊的老化問題，現代的CMP 機台都具備「研磨墊整理器」，具備與研磨過程同步整理 或定時整理的功能，以保持研磨墊的清潔，因此使用研磨 塾整理器去除研磨墊上的殘留顆粒，以增加研磨墊的使用 壽命及效能。 然習知的研磨墊整理器的鑽石露出量並沒有一個有效 的方法可獲得控制，因此在使用研磨墊整理器去除研磨墊 上的殘留顆粒時並無法獲得極高的效能，且鑽石研磨墊整 理器所鑲嵌的鑽石顆粒常會因為應力的關係而從研磨器整 理器上脫落，進而縮短其壽命。 有鑑於此，本發明係針對上述之困擾，提出一種可控 、:鑽石露出量之鑽石研磨墊整理器之製造方法，α改善上 达之缺失。 【發明内容】 本發明之主要目的，係在提供—種可控制鑽石露出量 之鑽石研磨墊整理器之製造方 深声θ ΠΠ π ΛΑ Μ日 表奂万法，其係利用一種具有預設 以万决係利用結合層將鑽石牢 結^m、具，以將鑽石研磨整理器設置於其上而燒 ’使知鑽石的露出量可以被決定。 本發明之另一目的，你尤姐# ^ 之鍇虚拥故挪祖 係在k供一種可控制鑽石露出量 續石研磨墊整理器之製造方Page 5 1283614 -^―__ Case No. 94115045_年月 a Correction _ i, invention description (2). Phenomenon. During the grinding process, the surface material of the polishing pad will also be depleted and deformed. In addition, the reactants deposited on the surface should be properly removed. Therefore, in the process of use, if there is no proper treatment, the surface of the polishing pad will rapidly deteriorate, resulting in removal rate. In order to solve the problem of aging of the polishing pad, the modern CMP machine has a "polishing pad finisher", which has the function of finishing or timing finishing with the grinding process to keep the polishing pad clean, so it is finished with a polishing pad. The remover removes residual particles from the polishing pad to increase the life and performance of the polishing pad. However, the amount of diamond exposure of the conventional polishing pad finisher is not controlled by an effective method, so that the use of the polishing pad finisher to remove residual particles on the polishing pad does not achieve extremely high performance, and the diamond polishing pad finisher The inlaid diamond particles often fall off the grinder finisher due to stress, which shortens their life. In view of the above, the present invention has been made in view of the above-mentioned problems, and proposes a controllable method for manufacturing a diamond polishing pad finisher in which the amount of diamond is exposed, and the improvement of α is improved. SUMMARY OF THE INVENTION The main object of the present invention is to provide a diamond polishing pad finisher that can control the amount of diamond exposure. The deep sound θ ΠΠ π ΛΑ Μ Μ 奂 奂 , , , , , , , , The dying system uses the bonding layer to hold the diamond in place, and the diamond polishing device is placed thereon to burn the 'the amount of exposure of the diamond can be determined. Another object of the present invention is that you have a sneak peek at the ancestor of the ancestor of the ancestors.
第6頁 1283614 ^--塞號94115045 年 月 日 __ ΐ:發明說明（3) •固的設置於底層上，結合層與鑽石結合力高，使鑽石較穩 固，因此可提高鑽石研磨墊整理器之壽命，並可降低成 〇 為達到上述之目的，本發明係提出一種可控制鑽石露 出量之鑽石研磨墊整理器之製造方法，其步驟包括首先先 k供一模具’其開設有一個以上的凹槽，接著在凹槽内填 入一層以上的黏著層，並設置一個以上的鑽石嵌入黏著 層，接著在鑽石上利用一結合層以形成一底層，並進行燒 、、、口 ’接者將模具移除，並移除黏者層’使得鐵石露出，且 鑽石的露出量為凹槽的深度，或利用鑽石插入黏著層的深 度以控制鑽石的露出量。 底下藉由具體實施例配合所附的圖式詳加說明，當更 容易瞭解本發明的目的、技術内容、特點及其所達成的功 效0 【實施方式】 本發明提出一種可控制鑽石露出量之鑽石研磨墊整理 器之製造方法，第1(a)圖至第1(f)圖為本發明之可控制鑽 石露出量之鑽石研磨塾整理器之製造方法的各步驟結構剖 視圖，首先如第Ua)圖，提供一模具2〇，此模具開設有一 凹槽22，其深度可為預先設定好，且模具2〇與凹槽22可一 體成型，接著如第1(b)圖，在凹槽22内填入一層以上的黏 著層24，此黏著層24可為粉狀或漿料，接著如第1(c)圖， 在凹槽22内利用轉貼法設置一個以上的鑽石26，其嵌入Page 6 1283614 ^--Serial No. 94115045 __ ΐ: Invention Description (3) • Solid on the bottom layer, the bonding layer and diamond combination high, making the diamond more stable, thus improving the diamond polishing pad finishing The life of the device can be reduced, and the purpose of the invention is to achieve the above-mentioned purpose. The present invention provides a method for manufacturing a diamond polishing pad finisher capable of controlling the amount of diamond exposure, the steps of which include first providing a mold for the mold. a groove, then fill more than one adhesive layer in the groove, and set more than one diamond embedded in the adhesive layer, then use a bonding layer on the diamond to form a bottom layer, and burn, and The mold is removed and the adhesive layer is removed to expose the stone, and the diamond is exposed to the depth of the groove, or the depth of the diamond is inserted into the adhesive layer to control the amount of diamond exposure. The purpose, technical contents, features and the achieved effects of the present invention are more readily understood by the specific embodiments in conjunction with the accompanying drawings. [Embodiment] The present invention provides a controllable amount of diamond exposure. The manufacturing method of the diamond polishing pad finishing device, the first (a) to the first (f) is a sectional view showing the steps of the manufacturing method of the diamond polishing boring device capable of controlling the exposure amount of the diamond, firstly as the Ua The figure provides a mold 2, the mold is provided with a groove 22, the depth of which can be preset, and the mold 2〇 and the groove 22 can be integrally formed, and then as shown in the first (b), in the groove 22 Filling more than one layer of adhesive layer 24, the adhesive layer 24 may be powder or slurry, and then as shown in Fig. 1(c), more than one diamond 26 is placed in the groove 22 by means of a transfer method, which is embedded
1283614 -----94115045__ 年月 日_修正 主、發明說明（4) " --- •著層24内，再來如第i(d)圖，在鑽石26上形成一底層28， 底層28係利用一結合層3〇設置在鑽石26上，再來進行燒 結’使知錢石26固定在結合層3〇及底層28上，且如第i(e) 圖二將模具20移除，最後如第1(f)圖，將黏著層24移除， 使得鑽石26可以露出，且鑽石26的露出量為凹槽22的深度 或者為鑽石26嵌入黏著層24内的深度，以使鑽石26露出量 小於等於凹槽22的深度。 其中，黏著層24的材質為耐高溫，如8〇〇t以上之陶 瓷，例如二氧化矽（Si〇2)、三氧化二鋁（A12〇3)、氧化鋅 (ZnO)、氧化锆（ZrO)或石墨粉，或為耐高溫陶瓷材質與高 分子材料的混合物，然黏著層24的材質仍應依照燒結物， 即底層28及結合層30的溫度而定，以其材料特性在燒結過 程中不燒結成型，氧化或碳化造成鑽石不需後加工即可達 到設計的露出量；而底層28及結合層3〇由金屬或陶瓷材質 構成，底層28的材質為銅（Cu)、錫（Sn)、鎳（Ni)或不銹 粉所組成的合金粉。 而黏著層24移除的方法有多種，可利用剝除法移除， 或者利用刷去法及超音波槽清洗將黏著層24移除，以完 鑽石研磨墊整理器的製造，然上述黏著層24的移除方法係 為所舉的例子，舉凡任何可將黏著層24移除的方法皆包 含在本技術之範圍内。 模具20所開設的凹槽22深度可預先設定好，例如如 想使鑽石26的露出量為50%的話，則可以將凹槽22的深度 開設為鑽石26的一半高度，使得鑽石26會有5〇%位在凹槽1283614 -----94115045__ Year of the month _ correction of the main, invention description (4) " --- • within the layer 24, then as shown in the i (d) diagram, on the diamond 26 forms a bottom layer 28, the bottom layer The 28 series is disposed on the diamond 26 by means of a bonding layer 3, and then sintered to fix the carbon stone 26 on the bonding layer 3 and the bottom layer 28, and the mold 20 is removed as in the i-th (e) figure. Finally, as in Figure 1(f), the adhesive layer 24 is removed such that the diamond 26 can be exposed and the diamond 26 is exposed in a depth that is the depth of the recess 22 or the depth into which the diamond 26 is embedded in the adhesive layer 24 to allow the diamond 26 to The amount of exposure is less than or equal to the depth of the groove 22. The material of the adhesive layer 24 is high temperature resistant, such as ceramics above 8 〇〇t, such as cerium oxide (Si〇2), aluminum oxide (A12〇3), zinc oxide (ZnO), and zirconia (ZrO). Or graphite powder, or a mixture of high temperature resistant ceramic material and polymer material, but the material of the adhesive layer 24 should still be determined according to the temperature of the sintered material, that is, the bottom layer 28 and the bonding layer 30, and the material properties thereof during the sintering process. Non-sintering, oxidation or carbonization causes the diamond to reach the designed exposure without post-processing; while the bottom layer 28 and the bonding layer 3 are made of metal or ceramic material, and the bottom layer 28 is made of copper (Cu), tin (Sn). An alloy powder consisting of nickel (Ni) or stainless powder. The adhesive layer 24 can be removed by various methods, and can be removed by stripping, or the adhesive layer 24 can be removed by brushing and ultrasonic cleaning to complete the manufacture of the diamond polishing pad finisher. The method of removal is an example, and any method for removing the adhesive layer 24 is included in the scope of the present technology. The depth of the groove 22 formed by the mold 20 can be preset. For example, if the exposure amount of the diamond 26 is 50%, the depth of the groove 22 can be set to half the height of the diamond 26, so that the diamond 26 has 5 〇% bit in the groove
第8頁 1283614 、 、_案號94115045_年月日 修正__ 五；發明說明（5) 22内，因此於製造完成後，將模具20及黏著層22移除之 後，鑽石26的露出量即為50%，以此類推之，因此可利用 模具20開設的凹槽22深度決定鑽石26的露出量。 本發明係利用燒結法以使得鑽石26固定在結合層30及 底層28上，且結合層30所構成之材質與鑽石26結合力高， 且熔點低，使得鑽石26可以被穩固設置，而不易脫落。 本發明提出一種可控制鑽石露出量之鑽石研磨墊整理 器之製造方法，使用具有預設深度之凹槽的模具，以決定 鑽石的露出量，且結合層所使用之材質與鑽石結合力高， 使鑽石較穩固，因此可提高鑽石研磨墊整理器之壽命，並 可降低成本。 ' 以上所述係藉由實施例說明本發明之特點，其目的在 ，熟習該技術者能瞭解本發明之内容並據以實施，而非限 疋本發明之專利範圍，故凡其他未脫離本發明所揭示之^ 神而完成之等效修飾或修改，仍應包含在以 = 專利範圍令。 ^心甲凊Page 8 1283614, , _ case number 94115045_year and month correction __ five; invention description (5) 22, so after the completion of the manufacturing, after the mold 20 and the adhesive layer 22 are removed, the exposure amount of the diamond 26 is It is 50%, and so on, so the depth of the groove 22 which can be opened by the mold 20 determines the exposure amount of the diamond 26. The present invention utilizes a sintering method to fix the diamond 26 on the bonding layer 30 and the bottom layer 28, and the material of the bonding layer 30 has a high bonding force with the diamond 26, and the melting point is low, so that the diamond 26 can be stably set, and is not easy to fall off. . The invention provides a method for manufacturing a diamond polishing pad finisher capable of controlling the amount of diamond exposure, which uses a mold having a groove of a predetermined depth to determine the exposure amount of the diamond, and the material used in the bonding layer has high bonding strength with the diamond. Makes the diamond more stable, which increases the life of the diamond pad finisher and reduces costs. The above description of the features of the present invention is intended to be understood by those skilled in the art, and the skilled in the art can understand the invention and practice the present invention, and is not limited to the scope of the present invention. Equivalent modifications or modifications made by the inventions disclosed herein shall still be included in the scope of the patent. ^心甲凊
第9頁 I2S3614 v_案號94115045_年月日 修正_ 圖夫簡單說明 .【圖式簡單說明】 第1(a)圖至第1 (f)圖為本發明之可控制鑽石露出量之 鑽石研磨墊整理器之製造方法之各步驟之結構剖視圖。 【主要元件符號說明】 20模具 22凹槽 24黏著層 26鑽石 28底層 30結合層Page 9 I2S3614 v_Case No. 94115045_年月月日 Revision_ Tuft Simple Explanation. [Simplified Schematic] Figures 1(a) to 1(f) are diamonds of the present invention that can control the amount of diamonds exposed. A structural cross-sectional view of each step of the method of manufacturing the polishing pad finisher. [Main component symbol description] 20 mold 22 groove 24 adhesive layer 26 diamond 28 bottom layer 30 joint layer
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