TW2271PA 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種錢锻裝置，且特別是有關於一種晶圓承載 治具及應用其之濺鍍機。 [先前技術] 隨著科技的不斷的進步，各種電子產品帶給人們生活上的便利 與工作上的效率，使得電子產品之應用越來越廣泛。因此隨著電子產 的成長，相關電子材料的製造也跟著蓬勃發展。其中如積體電路、 液晶顯示面板、微機電零件或光碟片等，其製造過程中為了對所使用 之元件表面賦予某種特性，常採用一錢鍍（SpUtter )製程。由於濺錄 製程可達成極佳之沈積效率、大尺寸的沈積厚度控制、精確的成分控 制及較低的製造成本。因此，在積體電路製程中濺鍍製程之使用係極 為廣泛，以下說明一習知藏鑛機應用於一積體電路製程之原理。 請參照第1圖，其繪示依照傳統濺鍍機的示意圖。傳統之濺鍍 機40包括一反應室42、一靶材44及一夾盤46。反應室42係用以容 置濺鍍製程進行時所產生之電漿（Plasma)，靶材44係為一欲沈積之 • 金屬材料。夾盤46用以夾持一第一晶圓10。濺鍍製程大致上分為以 下幾個步驟：首先將第一晶圓10夾持於夾盤46，並擺放靶材料於 一固定位置。接著，將反應室42抽真空。然後，灌入一特定之反應 氣體於反應室内，並施加一電壓於靶材46及第一晶圓10之間，以激 發電漿於反應室42内。電漿内所產生的部分離子，將脫離電漿並往 靶材44移動。經電壓加速之離子將轟撞靶材44的表面，因此擊出金 屬原子。被擊出的金屬原子將進入電漿内，最後傳遞至第一晶圓1〇 上，並於第一晶圓10表面進行薄膜沈積。 弟一晶圓10係具有一弟一直徑L10，夾盤46係配合第—⑤圓TW2271PA IX. Description of the Invention: [Technical Field] The present invention relates to a money forging device, and more particularly to a wafer carrying jig and a sputtering machine using the same. [Prior Art] With the continuous advancement of technology, various electronic products bring people's convenience in life and work efficiency, making the application of electronic products more and more extensive. Therefore, with the growth of electronic products, the manufacture of related electronic materials has also flourished. Among them, an integrated circuit, a liquid crystal display panel, a microelectromechanical component, or an optical disk is often subjected to a SpUtter process in order to impart a certain characteristic to the surface of the component to be used in the manufacturing process. Excellent deposition efficiency, large thickness deposition thickness control, precise composition control, and low manufacturing costs are achieved due to the smear process. Therefore, the use of the sputtering process in the integrated circuit process is extremely extensive. The following describes the principle of a conventional mining machine applied to an integrated circuit process. Please refer to FIG. 1 , which is a schematic view of a conventional sputtering machine. The conventional sputtering machine 40 includes a reaction chamber 42, a target 44, and a chuck 46. The reaction chamber 42 is for accommodating the plasma generated during the sputtering process, and the target 44 is a metal material to be deposited. The chuck 46 is used to hold a first wafer 10. The sputtering process is roughly divided into the following steps: first, the first wafer 10 is clamped to the chuck 46, and the target material is placed in a fixed position. Next, the reaction chamber 42 is evacuated. Then, a specific reaction gas is poured into the reaction chamber, and a voltage is applied between the target 46 and the first wafer 10 to excite the slurry in the reaction chamber 42. Part of the ions generated in the plasma will escape the plasma and move toward the target 44. The ions accelerated by the voltage will strike the surface of the target 44, thus hitting the metal atoms. The metal atoms that are struck will enter the plasma and are finally transferred to the first wafer 1 and deposited on the surface of the first wafer 10. The younger one wafer 10 series has a younger brother and a diameter L10, and the chuck 46 is matched with the fifth round.
PA 1281^¾ XW2271 10之第一直徑L10的大小所設計。在半導體製程上，通常應用不同 尺寸晶圓生產，例如六吋、八吋及十二吋等。當濺鍍機4〇設置夾盤 46於反應室42内部時，濺鍍機40僅能對直徑大小為L10之晶圓進 行錢錢。如此，於習知之濺鍵機中，當使用固定尺寸之夾盤46時， 便無法在濺鍍機上彈性地安排不同尺寸的晶圓固定於夾盤46中以進 行滅鑛製程，如此，將大大的降低生產線的彈性。且無法配合生產晶 圓尺寸的濺鍍機則閒置於一旁，使得機台產能使用率降低。 另外，即使可藉由更換夾盤來對不同尺寸之晶圓進行濺鍍製 程’然其步驟必需先將反應室42解除真空狀態，並更換另一尺寸之 鲁夾盤。接著再抽真空，使反應室42回復至真空狀態。此數個步驟一 般需花費半天至一天的時間，相當耗費工時與成本。 此外，在濺鍍機40進行之濺鍍製程中，夾盤46需夾持第一晶 圓10之邊緣。因此第一晶圓1〇之邊緣將有一小段之寬度（例如是兩 公釐寬）無法進行薄膜沈積。因此，如必需於晶圓上形成一整面性的 薄膜沈積時，通常須另外購置電鍍機進行電鍍製程，以滿足整面性薄 膜沈積之要求。然電鍍製程不如濺鍍製程沈積效率佳、品質好，且電 鍍機之購置、保養與人力維護成本相當的昂貴。 φ 再者，在傳統之濺鍍機40中，夾盤46對於有缺角之晶圓或薄 型晶圓不易夾持。在進行此類晶圓之濺鍍製程中，經常發生晶圓破裂 或晶圓滑動等情形，將產生相當高之不良率。 【發明内容】 有鑑於此，本發明的目的就是在提供一種晶圓承載治具及應用 其之濺鍵機，其設置一晶圓承載治具於一濺鍍機中，使得不同尺寸的 晶圓可在濺鍍機上彈性地安排生產。大大的提高生產的彈性，並提高 機台產能利用率。且當變更不同尺寸晶圓時，僅需直接更換配合之晶 圓承載治具，或移除晶圓承載治具，相當節省工時與成本。此外，利 6 1281222The size of the first diameter L10 of the PA 1281^3⁄4 XW2271 10 is designed. In semiconductor processes, wafers of different sizes are commonly used, such as six-inch, eight-inch, and twelve-inch. When the sputter 4 sets the chuck 46 inside the reaction chamber 42, the sputter 40 can only make money for wafers having a diameter of L10. Thus, in the conventional splash screen machine, when the fixed size chuck 46 is used, it is impossible to elastically arrange the wafers of different sizes on the sputtering machine to be fixed in the chuck 46 for the demineralization process, thus, Greatly reduce the flexibility of the production line. The sputter machine, which cannot match the production of the crystal size, is left idle, which reduces the productivity of the machine. In addition, even if the wafers of different sizes can be sputtered by replacing the chucks, the steps must first deactivate the reaction chamber 42 and replace the chuck of another size. Vacuum is then applied to return the reaction chamber 42 to a vacuum. These several steps generally take half a day to one day, which is quite labor intensive and costly. Further, in the sputtering process performed by the sputtering machine 40, the chuck 46 is required to sandwich the edge of the first crystal 10. Therefore, the edge of the first wafer 1 will have a small width (e.g., two mm wide) for thin film deposition. Therefore, if a full-surface film deposition is necessary on the wafer, an electroplating machine is usually required to perform an electroplating process to meet the requirements of the full-surface film deposition. However, the electroplating process is not as efficient as the sputtering process, and the quality is good, and the cost of purchasing, maintaining and manpower maintenance of the electroplating machine is quite expensive. φ Furthermore, in the conventional sputtering machine 40, the chuck 46 is not easily clamped to a wafer having a missing angle or a thin wafer. In the sputtering process of such a wafer, wafer rupture or wafer slip often occurs, which results in a relatively high defect rate. SUMMARY OF THE INVENTION In view of the above, an object of the present invention is to provide a wafer carrying fixture and a sputtering machine using the same, which is provided with a wafer carrying fixture in a sputtering machine, so that different sizes of wafers Production can be flexibly arranged on the sputter. Greatly improve the flexibility of production and increase the capacity utilization of the machine. Moreover, when changing wafers of different sizes, it is only necessary to directly replace the matching wafer bearing fixture or remove the wafer carrying fixture, which saves labor and cost. In addition, Lee 6 1281222
三達編號TW2271PA 用本發明之晶圓承載治具可獲得整面性薄膜沈積，無須另外購置電鍍 機進行沈積效率較差之電鍍製程，亦可節省保養與人力維護成本。再 者，更可減少有缺角之晶圓或薄型晶圓之濺鍍製程的不良率。 根據本發明的目的，提出一種晶圓承載治具，用以使用於一濺 鍍機中。濺鍍機係用以對一第一晶圓進行濺鍍，其中第一晶圓具有一 第一直徑，晶圓承載治具之直徑係實質上等於第一直徑。晶圓承載治 具係具有一承載凹槽，用以承載一第二晶圓。第二晶圓係具有一第二 直徑，第二直徑係小於第一直徑。 根據本發明的再一目的，提出一種濺鍍機，用以對一第一晶圓 • 進行濺鍍。其中，第一晶圓具有一第一直徑。濺鍍機包括一反應室、 一輕材、一夾盤及一晶圓承載治具。乾材及夾盤係配置於反應室。晶 圓承載治具係夾持於夾盤並相對於靶材所設置。晶圓承載治具之直徑 係等於第一直徑，晶圓承載治具具有一承載凹槽，用以承載一第二晶 圓。第二晶圓係具有一第二直徑，第二直徑係小於第一直徑。 為讓本發明之上述目的、特徵、和優點能更明顯易懂，下文特 舉一較佳實施例，並配合所附圖式，作詳細說明如下： ^ 【實施方式】 請同時參照第2〜3圖，第2圖繪示依照本發明較佳實施例的晶 圓（wafer)承載治具及應用其之錢鍍機（sputter)之示意圖。第3 圖繪示第2圖中第二晶圓置入晶圓承載治具之示意圖。濺鍍機40包 括一反應室42、一乾材44、一爽盤46及一晶圓承載治具30。藏鍍 機40之夾盤46係用以夾持具有第一直徑L10之晶圓，例如是12吋 之晶圓。靶材44及夾盤46係配置於反應室42中。晶圓承載治具30 係夾持於夾盤46中，並相對於靶材44所配置。晶圓承載治具30之 直徑L30係等於第一直徑L10。晶圓承載治具30具有一承載凹槽32, 用以承載一第二晶圓20。第二晶圓20係具有一第二直徑L20 (在此 7 1222 三達編號TW2271PA 以8对為例），第二直徑㈣係小於第—直握⑽。 如第3圖所繪示，承載凹槽32之一 L20。當第二晶圓2G置人晶圓承載治i “L32士貫質上等於第二直徑 載凹槽32之槽壁沒有過大之間隙。/〇且承第二晶圓2〇與承 於第二晶圓20之厚度〇20的_半， 曰2之珠度D32係大 承載凹槽32中。假若第二晶圓2〇為复弟二晶圓20可平穩地置放於 20仍然可穩固地放置於承載凹槽32内、缺角，晶圓時，第二晶圓 开J曰圓，合繁-曰且饭右苐 晶圓20為一薄 炎曰曰0，田弟一曰曰® 20放置於晶圓 u巧 藉由具有-定深度之承載凹槽32穩固地:持第二晶圓可 用本實施例之晶圓承心具及應用 機槽32中。故使 以有效地避免有滑片、破片的風險。讀料，在濺鏟製程中，可 此外，請參照第4圖，其繪示第2圖中 晶圓，3。更包括一取放溝槽34，取放溝槽=之= 載凹槽32相通，另一端係與承載 ^ IS1 20之，、刈之一邊緣相通。由於第二晶 “Π 不容許任何工具的接觸與破壞。因此，取 放溝槽34之设汁可方#直命明黎 移動第二晶圓2G。真工及纽附第二晶圓2G之背面，以取放或 t 1 栽凹槽32中。並將晶圓承載治具3。夾持於失盤 由m可開始進行賤鐘製程。於本實施例之晶圓承載治具30 中；一曰曰圓20係直接置放於承載凹槽32内，第二晶圓之 表m何物品的阻揞，因此可獲雜沈積。 * 子另直仏為6 11 寸之第二晶圓藏鑛一薄膜時，則錢鐘機4〇 係< 改使用另-承载凹槽的直徑為6 ^纽本體直徑為^寸之晶圓承 載治具1於將此晶圓承裁治具夾持於用以夾持12忖之晶圓的夹盤46 後’接著即可進行璣錢製程。另外，若要對直徑為 12时之晶圓進行Sanda No. TW2271PA can realize the whole-surface film deposition by using the wafer-bearing jig of the present invention, and it is not necessary to separately purchase an electroplating machine for the plating process with poor deposition efficiency, and the maintenance and labor maintenance cost can be saved. Moreover, the defect rate of the sputtering process of the wafer having a corner or the thin wafer can be reduced. In accordance with the purpose of the present invention, a wafer carrying fixture is proposed for use in a sputtering machine. The sputtering machine is configured to sputter a first wafer, wherein the first wafer has a first diameter and the wafer carrying fixture has a diameter substantially equal to the first diameter. The wafer carrier has a carrier recess for carrying a second wafer. The second wafer has a second diameter, the second diameter being less than the first diameter. According to still another object of the present invention, a sputtering machine is proposed for sputtering a first wafer. Wherein, the first wafer has a first diameter. The sputtering machine includes a reaction chamber, a light material, a chuck, and a wafer carrying fixture. The dry material and the chuck are disposed in the reaction chamber. The wafer carrying fixture is clamped to the chuck and positioned relative to the target. The diameter of the wafer carrying jig is equal to the first diameter, and the wafer carrying jig has a carrying groove for carrying a second crystal. The second wafer has a second diameter, the second diameter being less than the first diameter. The above described objects, features, and advantages of the present invention will become more apparent and understood. 3, FIG. 2 is a schematic view showing a wafer carrying jig and a sputter using the same according to a preferred embodiment of the present invention. FIG. 3 is a schematic view showing the placement of the second wafer into the wafer carrying fixture in FIG. 2 . The sputtering machine 40 includes a reaction chamber 42, a dry material 44, a refreshing tray 46, and a wafer carrying fixture 30. The chuck 46 of the holding machine 40 is used to hold a wafer having a first diameter L10, such as a 12 inch wafer. The target 44 and the chuck 46 are disposed in the reaction chamber 42. The wafer carrying jig 30 is clamped in the chuck 46 and disposed relative to the target 44. The diameter L30 of the wafer carrying jig 30 is equal to the first diameter L10. The wafer carrier fixture 30 has a carrier recess 32 for carrying a second wafer 20. The second wafer 20 has a second diameter L20 (here, 7 1222 three numbers TW2271PA is exemplified by 8 pairs), and the second diameter (four) is smaller than the first straight grip (10). As shown in Fig. 3, one of the grooves 32 is carried by L20. When the second wafer 2G is placed on the wafer carrier, the "L32 channel is equal to the gap of the second diameter carrier groove 32 without excessive gap. / / The second wafer 2 〇 and the second The thickness of the wafer 20 is _ half of the thickness 曰20, and the thickness D2 of the 曰2 is in the large carrying recess 32. If the second wafer 2 is a buddy, the second wafer 20 can be stably placed at 20, and can still be stably When placed in the carrying recess 32, the corner is not, the wafer is opened, the second wafer is opened, and the wafer is 20, and the wafer 20 is a thin 曰曰0, Tiandi 曰曰® 20 The wafer is placed on the wafer firmly by the carrier recess 32 having a constant depth: the second wafer can be used in the wafer core and the application slot 32 of the embodiment, so that the slip is effectively avoided. The risk of film and fragmentation. Reading material, in the splash shovel process, please refer to Figure 4, which shows the wafer in Figure 2, 3. It also includes a pick-and-place groove 34, and the groove is taken. The carrier groove 32 is in communication with the other end of the carrier, and the edge of the carrier is connected to the edge of the carrier. The second crystal "Π does not allow any tool contact and destruction. Therefore, the pick-and-place groove 34 can be moved to the second wafer 2G. The back side of the 2G wafer and the second wafer 2G are placed in the groove 32. The wafer is loaded with the fixture 3. Clamping on the lost disk The m-clock process can be started. In the wafer carrying fixture 30 of the present embodiment, a circle 20 is placed directly in the carrying recess 32, and the second wafer is obstructed by any object, so that deposition can be obtained. * When the other is a 6-11 inch second wafer-mining film, the money clock machine is used. The carrying jig 1 is then loaded into the chuck 46 for holding the wafer of 12 turns. In addition, to perform wafers with a diameter of 12 o'clock
TW2271PA 雜時，貝嶋晶圓承載治具3〇，並直接以炎盤46夹持㈣之晶 因，即可進讀鍍製程。因此，本發明之 一賤鑛機40可針對各種不同尺寸之晶圓進行濺链。 晶圓承載治具30之材質較佳地係為一石夕晶圓所製成之假晶圓 U_y wafer)。晶圓承載治具3G之承載凹槽D係藉由半導體製程 所形成，例如黃光製程及_製程。因此，晶圓承載治具3。具有晶 圓之特性，其麵鍍製程之高溫中不會產生形變。並且，使用後之晶 圓承載治具30可利用濕餘刻等浸入酸液之方式去除表面沈積之薄 膜’使得晶圓承載治具3G可重複使用，且晶圓承載治具Μ並不會受 到酸液之傷害。若治具錢驗騎f的話，於_金屬薄膜後，如 需重覆使用金屬治具’必須將金屬治具浸酸來去除金屬薄膜，然此動 作將會傷到金屬治具。此外，由於進行濺鍍時，溫度會達到2〇〇多度， 金屬治具將會有熱變形的問題，而導致濺鍍機4〇發生黏片或斜片^ 問題。因此，於本實施例中，晶圓承載治具3〇之材f選用假晶圓的 話，其效果將比金屬材質之晶圓承載治具為佳。 當欲濺鍍之晶圓之尺寸變更時，只需直接更換具有不同直徑大 小之承載凹槽的晶圓承載治具，或移除晶圓承載治具即可。而不需進 行習知作法中之使濺鍍機40解除真空狀態、更換夾盤及再抽真空等 程序。 工 本發明上述實施例所揭露之晶圓承載治具及應用其之濺鍍機， 其設置一晶圓承載治具於一濺鍍機中，使得不同尺寸的晶圓可在濺鍍 機上彈性地安排生產。大大的提高生產的彈性，並提高機台產能利用 率。且當變更不同尺寸晶圓時，僅需直接更換配合之晶圓承載治具， 或移除晶圓承載治具，相當節省工時與成本。此外，利用本發明之晶 圓承栽治具可獲得整面性薄膜沈積，無須另外購置電鍍機進行沈積效 率較差之電鍍製程，亦可節省保養與人力維護成本。再者，更可減^ mm 有缺角之晶圓或薄型晶圓之濺鍍製程的不良率。 綜上所述，雖然本發明已以一較佳實施例揭露如上，然其並非 用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍 内，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申 請專利範圍所界定者為準。 【圖式簡單說明】 第1圖繪示依照傳統濺鍍機的示意圖。 第2圖繪示依照本發明較佳實施例的晶圓承載治具及應用其之 • 濺鍍機之示意圖。 第3圖繪示第2圖中第二晶圓置入晶圓承載治具之示意圖。 第4圖繪示第2圖中晶圓承載治具之俯視圖。 【主要元件符號說明】 10 :第一晶圓 20 :第二晶圓 30 :晶圓承載治具 32 :承載凹槽 W 34 ·•取放凹槽 40 :濺鍍機 42 :反應室 44 :靶材 46 ·爽盤 D20 :厚度 D32 :深度 L10 :第一直徑 L20 :第二直徑 10 1281222When the TW2271PA is used for a time-consuming period, the Bellows wafer carries the fixture 3〇, and the crystal of the (4) is directly held by the solder disk 46, and the plating process can be read. Thus, the shovel 40 of the present invention can be splattered for wafers of various sizes. The material of the wafer carrying fixture 30 is preferably a dummy wafer U_y wafer made of a ray wafer. The carrier recess 3 of the wafer carrying fixture 3G is formed by a semiconductor process such as a yellow process and a process. Therefore, the wafer carries the jig 3. It has the characteristics of a crystal circle, and it does not deform in the high temperature of the surface plating process. Moreover, the used wafer-carrying jig 30 can remove the surface-deposited film by immersing the acid solution in a wet residual state, etc., so that the wafer-carrying jig 3G can be reused, and the wafer-carrying jig is not subject to Acid damage. If the jig has a money test, if the metal film is to be reused after the metal film, the metal fixture must be pickled to remove the metal film, and the action will damage the metal fixture. In addition, since the temperature will reach more than 2 度 when the sputtering is performed, the metal fixture will have the problem of thermal deformation, which may cause the problem of the adhesive sheet or the slanting sheet of the sputtering machine. Therefore, in the present embodiment, if the dummy wafer is used for the wafer carrying fixture 3, the effect will be better than that of the metal wafer bearing fixture. When the size of the wafer to be sputtered is changed, it is only necessary to directly replace the wafer carrying jig having the bearing grooves of different diameters or remove the wafer carrying jig. It is not necessary to perform the procedures of the sputtering machine 40 for releasing the vacuum state, replacing the chuck, and then vacuuming in the conventional practice. The wafer carrying jig and the sputtering machine using the same according to the above embodiments of the present invention are provided with a wafer carrying jig in a sputtering machine, so that different sizes of wafers can be elastically used on the sputtering machine. Arrange production. Greatly improve the flexibility of production and increase the utilization rate of machine capacity. Moreover, when changing wafers of different sizes, it is only necessary to directly replace the matching wafer bearing fixture, or remove the wafer carrying fixture, which saves labor and cost. In addition, the use of the crystal round fixture of the present invention can achieve full-surface film deposition without the need to separately purchase an electroplating machine for a plating process with poor deposition efficiency, and can also save maintenance and labor maintenance costs. Furthermore, it is possible to reduce the defect rate of the sputtering process of a wafer having a missing angle or a thin wafer. In view of the above, the present invention has been described above in terms of a preferred embodiment, and is not intended to limit the invention, and various modifications may be made without departing from the spirit and scope of the invention. And the scope of the present invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a conventional sputtering machine. 2 is a schematic view of a wafer carrying jig and a sputtering machine using the same according to a preferred embodiment of the present invention. FIG. 3 is a schematic view showing the placement of the second wafer into the wafer carrying fixture in FIG. 2 . FIG. 4 is a plan view showing the wafer carrying jig in FIG. 2 . [Major component symbol description] 10: First wafer 20: Second wafer 30: Wafer bearing jig 32: Bearing groove W 34 · Pick-and-place groove 40: Sputtering machine 42: Reaction chamber 44: Target Material 46 · Shuang D20: Thickness D32: Depth L10: First diameter L20: Second diameter 10 1281222
三達編號TW2271PA L30 :承載治具之直徑 L32 :承載凹槽之直徑Sanda number TW2271PA L30: diameter of the bearing fixture L32: diameter of the bearing groove