1280680 九、發明說明： 【發明所屬之技術領域】 本發明為關於訊號線電路裝置。 【先前技術】 專利文獻1揭示有將線路導 體層之間，於其外層側設有接=在屬於電介質之絕与 也¥體之稽®刑士比4氏哭、 以控制如上述構成之積層型諧振 二5白“。。月 (出mmmg)線路導體的方法。°。 y員干寺，已知有修i (專利文獻υ日本特開平6_2246 -【發明内容】 报 •(發明所欲解決之課題） 然而，習用上，由於線路導體受絕緣 修整線路導體時，必須使線路導體霖出= 皮復’故欲 面，並將其側面全體加以切削。 '貝體層之一側 罘14圖表示在形成有電路元件之絕 有訊號線之習用例。 、、心層表面配置 參照第14目，於電介質層4之表 於電介質層4之背面形成有接地線8。又雖未有訊號心， 電介質層4之表面亦配置有半導體元 ：：： 路元：，然後形成覆蓋電路元件之模塑樹脂二:件寺之電 一習用上’如上所述，由於訊號線6係由電八 杈塑樹脂14覆蓋，因此對訊號線6實行修敕士’丨貝6及 第Η圖⑷之虛線所示地切削裝置 例^，必需如將 圖(㈣麵樹脂14之一部分加以去:面，或… ^ U，使其露出訊 316519 1280680 號線6後實行修整，再用模㈣埋 Η圖⑷所示方法實行對tW6之修整^ 如依第 訊號線“己置在侧面附近之場所性"丨二則叫必須將 一 >Τ Γ生限制。又如依繁 法實行對訊號線6之修整時’則 ； =削除時必須具備形成開口部所需的金屬模且 :新埋覆模塑樹脂而構成增加製程步驟數及增加成::: 上述的問題提供能簡易的實行對於 成唬線電路装置之訊號線之 為目的。 一卫。周整i置之特性的技術 (解決課題之手段） 所声t發明之目的在提供以含有：電介質u成於電介 面的訊號線；以及設在電介質層之—面，而於電 w貝層之一面侧配置有立 # ^ pe ^ ^ 有，、他構件柑，使訊號線與該其他構 2間形成空隙的間隔件（spacer)為特徵之訊號線電路震 拄j電介質層之一面的相反面，或於訊號線的兩侧設有 :5过線與上述接地線成對而構成微條（mici·。strip) 1彳同平面(coplanar)線路。在此，由於訊號線係設在電 :“之面’而得以容易對訊號線實行修整。又，間隔 牛為設在形成有訊號線之區域周圍。其他構件則可以為基 板0 5 ^如以訊號線形成在電介質層表面的狀態，於訊號線附 -置。他構件4 ’由於受到其他構件的影響，使訊號線 316519 6 ^28〇68〇 ==阻抗容易變動。特別於其他構件為導電 ，介質層表面的方法在實用上號:配 =明在訊號線與其他構件之間形成空隙，則：號線 由介電率低的空氣包圍之狀能 儿、7也成 ME , 14± ^ 狀心，故能減低其他構件的影 曰，而可抑制特性阻抗產生變動。 ^ 本發明之訊號線電路裝置中， 質声之又叮包含.配置在電介 二：的相反面之電路元件；及於電介質層之相反面 知电路元件密封之密封樹脂。 面 ‘：“發明，雖然於電介質層上設有上述電路元 .面=，但㈣號線係設在具有密封樹脂等的面之相反 因此可各易對訊號線實行修整的調整。 依本發明5可提伸_白· 」杈仏匕S .基板，·形成在基板表面之導 :件’配置在基板上之電介質層；形成在電介質層之一 ㈣訊號線；以及設在基板與電介質層之間，以請線 共基板之間形成空隙之間隔件為特徵的訊號線電路裝^ 日士^面形成有導電構件之基板配置在訊號線附近 :，由於導電構件之影響，使訊號線之特性阻抗容易變動。 =本發明，由於訊號線與基板之間配置有形成空間的間 f件，因此能減低基板的影響，而得以抑制特性阻抗的變 動。 <又，導電構件可設在基板之與訊號線相對之面’亦可 設在相反側之面。如將導電構件設在相反側之面，則由於 與訊號線之距離更遠而更可減低受到導電構件的影響。 316519 7 1280680 』依本發明之訊號線電路裳置，其間隔件可形成比前述 訊號線之膜厚為厚。訊號線可埋設於電介質層之一面，亦 可將其-部分或全部為凸出於一面的配置。依此構成，則 無關訊號線之配置位置，可於其他構件及基板之間形成空 隙，從而可減低該等構件對訊號線之影響。又訊號線與其 他構件及基板之距離越A，越可減低受到料構件之影響。 •八之訊號線電路裝置’訊號線可露出並形成日於 电"貝層接觸面的相反面。 依本發明之訊號線電路裝置，訊號線可用介電率為低 ，於構成電介質層之材料的絕緣材料覆蓋。一一 -a此’可將訊號線產生之電磁場封閉在絕緣材料内。 ，二 明之構成來說明，然上述構成之任意組合 屬本％明“樣。又將本發明之表現變換成其他種類實 現者亦應屬本發明的態樣。 卞、、 (發明之效果） =發㈣簡易的實行對於訊號線電路裝置之 的1W整，亚能調整裝置的特性。 【貫施方式】 弟1圖表示將本實施形能 哭的-邱八十田鱼 虎線電路褒置用做放大 00的邛刀之周邊電路的構成。 ，圖中所不放大益201為由輸入電路200、電晶體2〇2、 、，圈2〇4、讯號線電路裝置】02、及輪出電路2〇6構成幸十 入電路200連接於電晶體2〇2之美 鉍 ' 接於其集極。又電晶娜2〇2夕隹、、调出琶路206則連 月丑 本極為連接於線圈2 〇4及訊 316519 1280680 號線電路裝置1〇2。電晶體202之射極為接地。訊號線電 路裝置102之詳細構成容後述，然訊號線電路裝置}⑽含 有由訊號線及接地線構成之微條線路。該放大器之= 性雖因電晶體202及線圈204之特性而變動，:藉由婦 訊號線電路裝置102之訊號線長度可減低放大曰： 性變動。 ^ 設線圈204之電減設tM畜炎1 α u 又。f值為1.3nH，而檢驗電感之誤 差為± 〇.5nH時由圖中c-c，所見之反处 妗真疮τ &门— ％生、、、口果在訊號 、·泉長度Lst為固定而線圈2〇4之電感值為2她及 -時，其反射特性之模擬結果均自設計值偏離。鄉 -，整訊號線電路裝置102之訊號線長度，可校準於反： 特性之設計值，結果可將放大器2〇1之特性校準於設計值。 以下詳細的說明訊號線電路裝置ι〇2之微條線 二二圖表二第1圖之訊號線電路裝置的剖視圖。第2 圖及弟，別表示沿第i圖A_A，及β·Β，的剖視圖。 如罘2圖所不’訊號線電路裝置102含有電介質層 t、形成於其表面之接地線⑽，及形成於電介質層、曰 之背面的訊號線1 〇6。％ j 曰 Λ號線106為條狀導體，與接 1⑽形成對而構成微條線路。 " 構成之基板。有關構成電104例如為由^ 冉取兒；丨貝層104之材料容後述。 心雖未做圖示’然於電介質層1〇4之表面上配置 月且元件及被動元件等之帝改 雕_ . 之見路兀件。半導體元件有如電曰 :、—極體、1C晶片等，被動元件有如晶月電容器、曰； 電阻等。又雖未圖示，作在带八所 日日片 仁在电介質層104上形成有配線圖 9 1 ] 65 ] 9 1280680 :以：電路元件做電的連接。又電介質層 路兀件密封之模塑樹脂114。 又有肸毛 第3圖表示訊號線電路裝置102安裝於 :的狀態。如第3圖所示，在電介質層1〇4:;^ I:、2。接地線1〇8之-方(圖中左倾外部電極112 )丨由導通孔卜以）110做電的連接。 線^裝基板120之表面及背面各設有接地線a*及接地 ⑽之接Z線電路裝置Η""之外部電極112與安裝基板 之接地線124為由焊劑130連接。 線+ 焊劑13G及光阻焊劑132的功能為用以於訊號 心之訊號線106與安裝基板120之間構成空 ?。猎此即可以在訊號線電路裝置102之訊號線 2〇之間構成高度為Η2之空隙。而藉由隔 °工孔之介電率低的材料於訊號線1G6與安裝基板120 t減低形成在絕緣體層122表面之接地線m及接地 、’广126的影f ’而抑制微條線路之特性阻抗的變動。 如上所述，放大器训（苐之特性可藉由修整訊號 …106之螭部调整訊號線1〇6之長度而得到調整。修整係 在訊號線電路|置1()2裝設在安裝基板m上之前實行。 對於訊號線106之修整例如可由照射雷射等實行。修整後 士訊號線106端部可由樹脂等覆蓋。由此可防止訊號線⑽ ' 依才芦知形悲為如第2圖所示，由於訊號線1 〇6 形成在訊號線電路裝置1〇2之外部，因此能容易對其實行 in 316519 l28〇680 修整。 弟13圖表示安裝裝置1〇〇之整體圖。參照該圖，於電 以貝層1〇4上配置有半導體元件136及被動元件丨38等之 電路7^件。形成在半導體元件136下面之接地線1〇8與夾 電介質層104形成在其下方之訊號、線1〇6構成微條線路。 其次况明訊號線電路裝置i 〇2裝設在安裝基板上 面時之電介質層1G4之膜厚&及訊號線iG6與絕緣體層 122之間的距離H2對於訊號線電路裝置1〇2之特性阻抗之 關係的測試結果。又對於訊號線電路裝置1〇2之特性阻抗 分別測試如第4圖（a)所示於安裝基板12〇之絕緣體層m 表面設有接地線m的狀態，及如第4圖(b)所示於絕曰緣體 層122背面設有接地線丨26的狀態。 又微生歷之特性阻抗為由訊號線]〇 6之寬度w及電 介質層.104之層厚Hi —之比決定。，即如減小電介質層104 之層厚，則訊號線106之寬度W亦可變小。由此亦可減低 訊號線電路裝置1〇2裝設在安裝基板12〇上時所受安裝基 板120之影響。 土 如第4圖所示，用訊號線1Q6為由光阻焊劑ιΐ6覆蓋 測試。而於電介質層104之 “ ηι、100# m、15〇// ηι、3〇〇 各為 70 // m、165 // m、2(50 而構成之訊號線電路裝置102 比介電率為4.4,膜厚H]為50 // m時之訊號線1 06之寬度ψ /』m、5 5 0 // m之結果其特性阳於七/^< η。 /竹且彳几均為50Ω。安裝基板120 之絕緣體層Π2為由FR-4構成，層厚大約為5〇〇〆⑴。將 訊號線電路裝置102裝設在安裝基板12〇測試其特性阻抗 316519 11 1280680 所得測試結果表示於第5圖。 如弟5圖所示，在接地線m設在絕緣體層122表面 時（圖中（a))，訊號線106之表面與安裝基才反]2〇間之距離 h2愈大愈能減低所受安裝基板12〇之影響，而能抑制住特 性阻抗之變動。又使電介質層1〇4之層厚&越薄愈可減小 訊號線！06白勺寬度|，由此亦可減低所受安裝基板12〇之 制特性阻抗的變動。在電介質層ι〇4之層厚& 減低至5〇_以下日夺，特性阻抗之變動可得到大幅抑制。 又接地線12 6設在增緣卿思。。1280680 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a signal line circuit device. [Prior Art] Patent Document 1 discloses that a wiring layer is provided between the line conductor layers on the outer layer side thereof, and that it is a dielectric material that is also a body of the body. Type resonance 2 5 white ".. month (out mmmg) line conductor method. °. y staff dry temple, known to repair i (patent literature υ Japan special Kaiping 6_2246 - [invention content] report • (invented to solve However, in practice, when the line conductor is insulated and trimmed by the line conductor, it is necessary to make the line conductor lining up and cut the entire side of the line. 'One side of the shell layer 罘 14 A conventional example of a signal line in which a circuit component is formed is provided. The surface of the core layer is referred to in item 14, and a ground line 8 is formed on the back surface of the dielectric layer 4 on the surface of the dielectric layer 4. Although there is no signal center, The surface of the dielectric layer 4 is also provided with a semiconductor element::: Road element:, then a molding resin covering the circuit component is formed: a piece of electricity of the temple is used as described above, since the signal line 6 is made of electric octagonal plastic Resin 14 is covered, so the news Line 6 is an example of a cutting device shown in the dotted line of the 敕 丨 ' ' 丨 及 及 及 及 及 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , After the 316519 1280680 line 6 is trimmed, the trimming of the tW6 is carried out by the method shown in Fig. 4 (4). For example, according to the signal line "the place where it is placed near the side", the second is called a must Τ Γ 限制 。 。 。 。 。 。 依 依 依 依 依 = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = Increased to::: The above problem provides the purpose of easily implementing the signal line for the circuit of the Chengyu line. One Wei. The technology of the characteristics of the Zhou Yi (the means to solve the problem) Providing a signal line containing: a dielectric u formed on the dielectric surface; and a surface disposed on the dielectric layer, and a surface #^ pe ^ ^ is disposed on one side of the electric w layer, and the component is configured to make the signal line A spacer that forms a gap with the other structure 2 is characterized The line circuit shocks the opposite side of one side of the dielectric layer, or is provided on both sides of the signal line: 5 lines are paired with the ground line to form a micro strip (mici·strip) 1彳coplanar Here, since the signal line is set on the electric: "face", it is easy to trim the signal line. Moreover, the interval cow is placed around the area where the signal line is formed. Other components can be the substrate 0 5 ^ If the signal line is formed on the surface of the dielectric layer, it is attached to the signal line. The component 4' is affected by other components, so that the signal line 316519 6 ^ 28 〇 68 〇 = = impedance is easy to change. Especially for other components In order to conduct electricity, the method of the surface of the dielectric layer is practical: if the gap between the signal line and other components is formed, then the line is surrounded by air with a low dielectric constant, and 7 is also ME, 14 ± ^ centroid, so it can reduce the influence of other components, and can suppress the variation of characteristic impedance. In the signal line circuit device of the present invention, the sound and sound includes a circuit component disposed on the opposite side of the dielectric device: and a sealing resin sealed on the opposite side of the dielectric layer. Face: "Invention, although the above-mentioned circuit element is provided on the dielectric layer. Surface =, the line (4) is provided on the opposite side of the surface having the sealing resin, so that adjustment of the signal line can be easily performed. 5 can be extended _ white · 杈仏匕 S. substrate, formed on the surface of the substrate: a dielectric layer disposed on the substrate; one (four) signal line formed on the dielectric layer; and a substrate and a dielectric layer Between the signal lines of the spacers forming the gaps between the boards, the substrate on which the conductive members are formed is disposed near the signal lines: due to the influence of the conductive members, the signal lines are The characteristic impedance is easy to change. In the present invention, since the space f is disposed between the signal line and the substrate, the influence of the substrate can be reduced, and the characteristic impedance can be suppressed from being changed. <Also, the conductive member may be provided on the opposite side of the substrate from the signal line' or may be provided on the opposite side. If the conductive member is placed on the opposite side, it is more affected by the conductive member due to the distance from the signal line. 316519 7 1280680 The signal line circuit according to the present invention is disposed such that the spacer can be formed thicker than the film thickness of the signal line. The signal line can be buried on one side of the dielectric layer, or it can be partially or entirely arranged to protrude from one side. According to this configuration, the arrangement position of the unrelated signal lines can form a gap between other components and the substrate, thereby reducing the influence of the components on the signal line. The more the distance between the signal line and other components and the substrate, the lower the influence of the material receiving member. • The eight-signal line circuit device 'signal line can be exposed and formed on the opposite side of the electric contact layer. According to the signal line circuit device of the present invention, the signal line can be covered with an insulating material which is low in dielectric material and which constitutes a material of the dielectric layer. One-to-one can enclose the electromagnetic field generated by the signal line in the insulating material. The constitution of Erming is explained, but any combination of the above-mentioned configurations is the same as that of the present invention. The embodiment of the present invention should also be transformed into other types of implementations. 卞,, (The effect of the invention) = (4) Simple implementation of the 1W whole of the signal line circuit device, the characteristics of the sub-energy adjustment device. [Comprehensive application method] The brother 1 shows the use of this embodiment to cry - Qiu Ba Shi Tian Yu Hu line circuit The configuration of the peripheral circuit of the boring tool that amplifies 00. The figure 201 is not amplified by the input circuit 200, the transistor 2〇2, the ring 2〇4, the signal line circuit device 02, and the wheel The circuit 2〇6 constitutes a lucky circuit 200 connected to the transistor 2〇2, which is connected to its collector. The electric crystal is 2〇2隹2, and the 琶路206 is connected. The coil 2 〇4 and the 316519 1280680 line circuit device 1〇2. The transistor 202 is grounded to the ground. The detailed structure of the signal line circuit device 102 will be described later, and the signal line circuit device (10) contains the signal line and the ground line. The microstrip line. The performance of the amplifier is due to the transistor 202 and the line. The characteristics of the circle 204 vary: the length of the signal line of the female signal line circuit device 102 can be reduced by the amplification 曰: the change of the sex. ^ The electrical reduction of the coil 204 is set to tM stagnation 1 α u again. The f value is 1.3 nH, When the error of the test inductance is ± 〇.5nH, the cc in the figure is the opposite of the true sore τ & gate - % raw,, and the fruit is in the signal, the length of the spring is fixed, and the coil is 2〇4 When the inductance value is 2 and -, the simulation results of the reflection characteristics are deviated from the design value. The length of the signal line of the circuit-line circuit device 102 can be calibrated to the inverse: characteristic design value, and the result can be amplifier 2 The characteristics of 〇1 are calibrated to the design values. The following is a detailed cross-sectional view of the signal line circuit device of the signal line circuit device ι〇2, the second line of the second line, the second picture, and the second line. A cross-sectional view of Fig. A_A, and β·Β, as shown in Fig. 2, the signal line circuit device 102 includes a dielectric layer t, a ground line (10) formed on the surface thereof, and a signal line 1 formed on the back side of the dielectric layer and the germanium. 〇6.% j 曰Λ line 106 is a strip conductor, which forms a pair with 1(10) A micro-strip line. The substrate is formed. For example, the constituent electric device 104 is made of ^; the material of the mussel layer 104 is described later. The heart is not shown in the figure, but is disposed on the surface of the dielectric layer 1〇4. Months and components and passive components, etc. _. See the road. The semiconductor components are like electric 曰:, - polar body, 1C wafer, etc., passive components such as Jingyue capacitors, 曰; resistors, etc. It is shown that the wiring is formed on the dielectric layer 104 in the eight-day-old film. Fig. 9 1 ] 65 ] 9 1280680 : The electrical connection is made by the circuit component. The molding resin 114 of the dielectric layer sealing member is sealed. . Further, there is a bristles. Fig. 3 shows a state in which the signal line circuit device 102 is mounted in :. As shown in Fig. 3, in the dielectric layer 1〇4:;^ I:, 2. The grounding wire 1〇8-square (the left-leading external electrode 112 in the figure) is electrically connected by the via hole. The ground electrode a* and the ground (10) connected to the surface of the substrate 120 and the ground electrode (10) are connected to the ground electrode 124 of the mounting substrate by the flux 130. The function of the wire + flux 13G and the photoresist 114 is to form a space between the signal line 106 of the signal center and the mounting substrate 120. In this case, a gap of height Η2 can be formed between the signal lines 2 of the signal line circuit device 102. The material having a low dielectric constant of the spacer hole is used to reduce the ground line m formed on the surface of the insulator layer 122 and the ground, and the shadow of the 'wide 126' on the signal line 1G6 and the mounting substrate 120 t to suppress the microstrip line. Variation in characteristic impedance. As described above, the characteristics of the amplifier can be adjusted by adjusting the length of the signal line 1 〇 6 of the trimming signal ... 106. The trimming is performed on the signal line circuit | set 1 () 2 is mounted on the mounting substrate m The trimming of the signal line 106 can be carried out, for example, by irradiating a laser, etc. The end of the trimming semaphore signal line 106 can be covered by a resin or the like. This prevents the signal line (10) from being inferior to the shape of the image. As shown in the figure, since the signal line 1 〇6 is formed outside the signal line circuit device 1〇2, it can be easily trimmed in 316519 l28〇680. The figure 13 shows the overall view of the mounting device 1。. A circuit VII such as a semiconductor element 136 and a passive element 丨38 is disposed on the bead layer 1 〇 4, and a ground line 1 〇 8 formed under the semiconductor element 136 and a signal under which the dielectric layer 104 is formed are formed. Line 1〇6 constitutes a microstrip line. Secondly, the film thickness of the dielectric layer 1G4 when the signal line device i 〇2 is mounted on the mounting substrate and the distance H2 between the signal line iG6 and the insulator layer 122 are Characteristics of signal line circuit device 1〇2 The test result of the relationship between the resistance lines and the characteristic impedance of the signal line circuit device 1〇2 are respectively tested in a state in which the ground line m is provided on the surface of the insulator layer m of the mounting substrate 12 as shown in FIG. 4(a), and Fig. 4(b) shows a state in which the grounding wire 26 is provided on the back surface of the insulating layer 122. The characteristic impedance of the microbirth is the width w of the signal line 〇6 and the layer thickness of the dielectric layer .104. The ratio is determined, that is, if the layer thickness of the dielectric layer 104 is reduced, the width W of the signal line 106 can also be reduced, thereby reducing the time when the signal line circuit device 1〇2 is mounted on the mounting substrate 12〇. Influenced by the mounting substrate 120. As shown in Fig. 4, the signal line 1Q6 is covered by the photoresist ι 6 and the dielectric layer 104 is "ηι, 100# m, 15 〇 / / ηι, 3 〇. 〇 each is 70 // m, 165 // m, 2 (the width of the signal line 106 when the signal line circuit device 102 is composed of a dielectric constant of 4.4 and the film thickness H is 50 // m) / 』m, 5 5 0 // m The result is positive for seven/^< η. / Bamboo and 彳 are all 50 Ω. The insulator layer 安装2 of the mounting substrate 120 is composed of FR-4, and the layer thickness is It is about 5 〇〇〆 (1). The signal line circuit device 102 is mounted on the mounting substrate 12, and its characteristic impedance is tested at 316519 11 1280680. The test results are shown in Fig. 5. As shown in Figure 5, the ground line m is set at When the surface of the insulator layer 122 (in the figure (a)), the larger the distance h2 between the surface of the signal line 106 and the mounting substrate, the greater the distance h2 can reduce the influence of the mounted substrate 12, and the characteristic impedance can be suppressed. Changes. In addition, the thinner layer & layer of the dielectric layer 1〇4 can reduce the signal line! The width of the 06 is also reduced, thereby also reducing variations in the characteristic impedance of the mounted substrate 12〇. When the layer thickness & of the dielectric layer ι 4 is reduced to 5 〇 Å or less, the variation in the characteristic impedance can be greatly suppressed. And the grounding wire 12 6 is set in Zeng Yuanqing. .
Hl f(Bt(b)) 5 乡郎“ 1的尽度而幾乎不受安裝基板120之影 L :L:杬之變動大約可抑财5%以内。又絕緣體層 織叙i ^、包卞不同亦大致無影響。又於特性阻抗之 又力在5 /〇以内時，確認對 特性大致無影響。 、弟1圖所不放大電路2〇1之 置二電:二:。4之層厚H1為50…訊號線電路裳 ⑽與 阻抗幾乎無變動。 2約為25//111時，其特性 5。二ΪΤ:結果，電介質層104之層厚物設在 絕緣體層基板120無關接地線树 影塑。t由^面或背面均可減低所受安裝基板m之 變;。由此付以抑制訊號線電路裝置⑽之特性阻抗的 弟6至8圖表示訊號線電路裝置1〇2之種種形態。 3J6519 12 1280680 第6圖⑷、第7圖⑷及第8圖⑷表示微條線（而⑽ stup lme)型之讯唬線電路裝置1〇2。第6圖…）、第7 及第8圖（b)表不同平面型之訊號線電路裝置^的。^ 第6圖⑷及（b)所示為於訊號、線1〇6之下方設 因而將此訊號線電路裝置1〇2裝設在安裝基板12〇(第 上日寸5訊號線1 06與安梦其& 1 9 d > pg --r ι ° 衣基板12G之間可隔有介電率低之 * y、不叉安裝基板12〇之影響而得抑制訊沪線 電路裝置102之特性阻抗的變動。 。儿、" “弟7圖⑷及（b)所示之訊號線1〇6為由光 电磁場關閉在光阻焊劑116内。又將訊泸 β -电路裝置102裝設在安裝 〇 、。二 與安裝基板12〇之間了日m線106 光阻焊劑-之基板m之影響。 比介電率例如為44 ^ 為9。電介質層104之 蓋可防止裝設時訊號線：：號請 間，而有將電磁尸門 生之电磁場放射於直接空 Φ人 、 #邦閉的效果。將訊號線]0ό用介带至μ|_ -电"質層104為低之 ΓΤ；θ _....................................思— 料時之對於訊號線電路獲付輕減使用該種材 Μ …包略衣置1〇2的特性影響。 上積示為訊號線106設置在麵^ 域。層可…區 依上述將訊號線電路在 加大訊號線106鱼安裝其七彳叹女衣基板-0恰，可 扁基板120之間隔，由此可減低所受 316519 ]3 1280680 安裝基板120的影響。 第9圖表示第6圖（a)之訊號線電路裝置1〇2之製造步 驟的步驟剖視圖。 首先如第9圖⑷所示，於金屬箔400上形成光阻（ph〇t〇 reS1St)401，於形成訊號線1〇6之區域露出金屬箔4〇〇。其 次用電鍍法專於金屬箔400之露出面形成訊號線1〇6。其 次如第9圖（b)所示，於訊號線106上貼附表面形成有接地 線108之電介質層1〇4。其後在與接地線1〇8同時形成之 未圖示的圖形上裝設電路元件等，然後以模塑樹脂丨14將 電路元件密封（第9圖⑷）。 ^其後例如> 用研磨、研削、蝕刻、雷射金屬蒸發等將金 屬4 400減薄，對除去面形成光阻焊劑⑽（第$圖⑷）。 :、後將光阻圖案化成預定形狀而得如第6圖⑷所 不構成之讯號線電路裝置1〇2(第9圖（㊁））。 第1〇圖表示第8圖⑷之訊號線電路裝置1〇2之製造 步驟的步驟剖視圖。 首先為同樣於參昭繁Q1 士 1 …、弟9圖所作說明於金屬箔400上形 成光阻，於預定區域露出金屬 +、甘A 、，屬泊4〇0，形成配線圖形（未圖 不）。其次於金屬箔400上彡 ^ 上形成於其表面設有專電箔之絕緣 月豆層134。其後由蝕刻對導^ 對冷电泊製作圖形而於絕緣體層134 屯成sfl號線1〇6(第 於I 々 θ ())。其後於訊號線1 06上貼附 万、其表面形成有接地線〗的 104(^ 10ffl(b))〇 與接地線㈣^可以相同祖構成。其後在 攻之未®不的圖形上設置電路元件 316519 14 1280680 Μ」後用才吴塑樹月旨114將電路元件密封（第10圖（c))。 广*去至屬、石400 ’於除去後的面形成光阻焊劑1 30 弟10圖⑷）。然後對光阻焊劑13〇及、絕緣體層134部分選 t除去以形成凹部。由此製成第8圖⑷所示構成之訊號 毛路裝置102。除去光阻焊劑130及絕緣體134時，例 2可用電鑽加工、雷射加工，或其等組合的加工方法之任 一者0 — 依上述步驟時，在實施金屬箔400之除去步驟前，金 蜀/白4〇0為支持基板，因此即使將電介質層⑽形成較薄 丄^衣這成形性良好的訊號線電路裝置i 〇2。因而可形成 較薄之電介質層1Q4,結果可減小訊號線106之寬度。因 此，即使將訊號線106設在訊號線電路裝置1〇2之外部， 亦可減低所受安裝基板120之影響。 ^’丨貝層1 04之材料例如可使用環氧樹脂、BT樹脂等 虫胺（melamme)衍生物、液晶聚合物（p〇]ymer)、ppE樹 :亞胺（P〇lyimide)樹脂、氟樹脂、酚（phenol)樹脂、 聚醯胺雙馬來酸酐縮亞胺（polyamide B1Smaleimide)等。 一環氧树知例如可用雙酚類（bisphenols)A型樹脂、雙酚 颂F型樹脂、雙酚類S型樹脂、酚醛樹脂（phen〇l η〇ν〇】π)、 曱鉍搭型（cres〇l 110valac)環氧樹脂、三酚曱烷型環氧樹 脂、脂環族環氧樹脂等。 蜜胺衍生物例如有蜜胺、密胺氰脲酸酯、羥甲基化蜜 胺、三聚異氰酸、蜜白胺、蜜.勒胺、蜜弄、琥珀醯鳥糞胺、 硫酸蜜胺、硫酸乙醯鳥糞胺、硫酸蜜白胺、硫酸胍基蜜胺、 316519 128〇68〇 蜜胺樹脂、BT樹脂、三聚氰酸、三聚異氰酸、三聚異氛酸 行生物蚤胺二聚異氰酸酯、苯并烏糞胺、乙醯烏糞胺等 之蜜胺衍生物、胍（Guanidln)系化合物等。 液晶聚合物有如芳香族系液晶聚酯（polyester)、聚醯 亞胺、㈣胺醋（pol}/esteramide)，及含有該等之樹脂組成 物。其中最好使用取得優於耐熱性、加工性及吸濕性之平 衡之液晶聚酯或含有液晶聚酯之組成物。 一以上以實施形態及實施例說明本發明。該等實施形態 及只鉍例僅用以舉例說明本發明，而可形成種種的變形 及形成之’又开> 例當屬本發明之範圍應為該業者所理解。 +以上的實施形態中，訊號線電路裝置102以使用於放 大电路之4寸性調整為例做說明，但訊號 ，如可使用於«器、譜振器、帶通遽波器――邊r) ^第11圖表不訊號線電路裝置丨⑽使用於振盪器之周 =路的構成。訊號線電路裝置1〇2為裝設在電晶體21〇 二極與集極之任一方，或設在雙方，然後藉由調整訊號 06之長度即可調整振盪頻率。 第12圖表示訊號線電路裝置1〇2使用於帶通濾波器 」麥知、e玄圖，訊號線電路裝置1〇2之訊號、線⑽之兩 :她“其他訊號線140。該裝置可藉由修整接近該 、、路仫之邛分的長度L使其變化而變化帶通濾波器之 心頻率。 【圖式簡單說明】 316519 16 1280680 田J 1圖表示本發明之實施形態之訊號線卿置A传 用於放大器之部分電路之周邊電路構成。 I置為使 f 2圖表示第i圖之A_A，剖視圖。 第3圖表示第1圖之B-B，剖視圖。 第4圖（a)及（b)表示訊號線 上之安裝I置構成。 ^衣置衣*在安裝基板 第5圖係第4圖所 號線與安裝基板之距離 關係。 示安裝裝置之絕緣體層 、及訊號線電路裝置之 的層厚、訊 特性阻抗的 第6圖（a)及（b)表 第7圖（a)及（b)表 第8圖（a)及(b)表 弟9圖（a)至（e)表 步驟的步驟剖視圖。 示訊號線電路裝置之種種形態。 示訊號線電路裝置之種種形態。 示訊號線電路裝置之種種形態。 示第6圖所示訊號線電路裝置之擎造 之製 弟1〇圖（a)至（e)表示第8圖所示訊號線電 造步驟的步驟剖視圖。 衣置 使 苐11圖表示本發明之實 用於振盪态之周邊電路構成。 弟12圖表示本發明之實 用於帶通濾波器之例。 弟1〕圖表示本發明之實 視圖。 方也形悲之訊號線電路裝置使 方也形悲之訊號線電路裳置 施形態之安裝裝置構成的剖 視圖 第14圖（a)及（b)表 示習用之訊號線電路裝置構成的剖 π 3165]9 1280680 【主要元件符號說明】 100 安裝裝置 104 電介質層 108 接地線 112 外部電極 116、 132 光阻焊劑 122、 134 絕緣體層 130 焊劑 140 訊號線 201 放大器 204 線圈 102 n 214 訊號線電路裝置 106 訊號線 110 導通孔 114 模塑樹脂 120 安裝基板 124、126 接地線 13 6 電路元件 200 輸入電路 202、210 電晶體 206、212 輸出電路 18 316519Hl f(Bt(b)) 5 The glory of "Fang Lang" is almost unaffected by the shadow of the mounting substrate 120. L: L: The variation of 杬 can be suppressed within 5% of the financial. The difference is also substantially unaffected. When the characteristic impedance is within 5 /〇, it is confirmed that there is almost no influence on the characteristics. The younger one is not amplifying the circuit 2〇1, the second electricity: two: 4 layer thickness H1 is 50... The signal line circuit (10) has almost no change in impedance. 2 When it is about 25//111, its characteristic is 5. Secondly, as a result, the layer thickness of the dielectric layer 104 is set on the insulator layer substrate 120. The shadow of the mounting substrate m can be reduced by the surface or the back surface of the substrate. The figures 6 to 8 which are used to suppress the characteristic impedance of the signal line circuit device (10) represent various types of the signal line circuit device 1〇2. Form 3J6519 12 1280680 Fig. 6 (4), Fig. 7 (4) and Fig. 8 (4) show the microwire (and (10) stup lme) type of signal line circuit device 1〇2. Fig. 6), 7th and Figure 8 (b) shows the different planar signal line circuit devices ^. Figure 6 (4) and (b) shows the signal line, line 1〇6 and thus the signal line circuit Place 1〇2 on the mounting substrate 12〇 (the first day of the 5th signal line 1 06 and An Mengqi & 1 9 d > pg --r ι ° the substrate 12G can be separated by a low dielectric constant * y, the effect of the mounting substrate 12 不 does not affect the variation of the characteristic impedance of the circuit board 102. The "signal line 1 〇 6 shown in Figure 7 (4) and (b) is The photo-electric field is turned off in the photoresist 114. The signal-carrying device 102 is mounted on the substrate m between the mounting substrate, the second substrate and the mounting substrate 12, and the m-line 106 photoresist. The specific dielectric constant is, for example, 44 ^ 9. The cover of the dielectric layer 104 prevents the signal line from being installed: the number is requested, and the electromagnetic field generated by the electromagnetic corpse is radiated to the direct space Φ person, #邦闭Use the signal line]0 to pass to μ|_-electric " the quality layer 104 is low; θ _....................... .............Thinking - The timing of the signal line circuit is reduced by the use of the material Μ ... package features a characteristic of 1 〇 2. The product is shown as signal line 106 Set in the area ^ area. The layer can be ... according to the above signal line circuit in the increase signal 106 fish installed its seven sighs women's clothing substrate - 0, the flat substrate 120 spacing, thereby reducing the impact of the 316519 ] 3 1280680 mounting substrate 120. Figure 9 shows the signal line of Figure 6 (a) A cross-sectional view of the manufacturing steps of the circuit device 1 to 2. First, as shown in Fig. 9 (4), a photoresist (ph〇t〇reS1St) 401 is formed on the metal foil 400, and a metal foil is exposed in a region where the signal line 1〇6 is formed. 4〇〇. The second plating method is dedicated to the exposed surface of the metal foil 400 to form a signal line 1〇6. Next, as shown in Fig. 9(b), a dielectric layer 1?4 having a grounding line 108 formed on the surface is attached to the signal line 106. Thereafter, a circuit element or the like is mounted on a pattern (not shown) formed simultaneously with the ground line 1〇8, and then the circuit element is sealed by the molding resin crucible 14 (Fig. 9(4)). ^ Thereafter, for example, the metal 4 400 is thinned by grinding, grinding, etching, laser metal evaporation, etc., and a photoresist (10) is formed on the removed surface (Fig. (4)). Then, the photoresist is patterned into a predetermined shape to obtain a signal line circuit device 1〇2 (Fig. 9(2)) which is not constructed as shown in Fig. 6(4). Fig. 1 is a cross-sectional view showing the steps of the manufacturing steps of the signal line circuit device 1A2 of Fig. 8 (4). First, the photoresist is formed on the metal foil 400 in the same manner as the description of the Q1 士1..., 弟9, and the metal +, 甘A, and 属4〇0 are exposed in a predetermined area to form a wiring pattern (not shown). ). Next, an insulating moon bean layer 134 having a special electric foil formed on the surface of the metal foil 400 is formed on the surface of the metal foil 400. Thereafter, a pattern is formed by etching to the cold ion, and the insulator layer 134 is formed into a line sfl of the sfl line 1 (6) (I 々 θ ()). Then, 104 (^ 10ffl(b)) 〇 and grounding wire (4) which are attached to the signal line 106 on the signal line 106 can be formed with the same ancestor. Then, the circuit component is placed on the pattern of the attack and not 316519 14 1280680 后", and then the circuit component is sealed by the shovel (Fig. 10(c)). Guang* went to the genus, stone 400' to form a photoresist on the removed surface 1 30 (10)). Then, the photoresist 14 and the insulator layer 134 are partially removed to form a recess. Thus, the signal hair device 102 constructed as shown in Fig. 8 (4) is produced. When the photoresist 130 and the insulator 134 are removed, the example 2 may be any one of an electric drill processing, a laser processing, or a combination thereof. 0 - In the above steps, before the removal step of the metal foil 400 is performed, Since the white plate 4 is a supporting substrate, even if the dielectric layer (10) is formed, the signal line circuit device i 〇 2 having good moldability is formed. Thus, a thin dielectric layer 1Q4 can be formed, with the result that the width of the signal line 106 can be reduced. Therefore, even if the signal line 106 is disposed outside the signal line circuit device 1A2, the influence of the mounted substrate 120 can be reduced. ^' The material of the shell layer 104 can be, for example, an epoxy resin, a melamine derivative such as a BT resin, a liquid crystal polymer (p〇) ymer, a ppE tree: an imine (P〇lyimide) resin, or a fluorine. Resin, phenol resin, polyamide B1Smaleimide, and the like. An epoxy tree is known, for example, as a bisphenols type A resin, a bisphenol fluorene type F resin, a bisphenol type S type resin, a phenol resin (phen〇l η〇ν〇) π), and a ruthenium type ( Cres〇l 110valac) epoxy resin, triphenol decane type epoxy resin, alicyclic epoxy resin, and the like. Melamine derivatives such as melamine, melamine cyanurate, methylolated melamine, trimeric isocyanic acid, melam, honey, melamine, honey, amber guanamine, melamine sulfate , acetaminophen guanine amine, melam sulfate, sulfanyl melamine, 316519 128〇68〇 melamine resin, BT resin, cyanuric acid, trimeric isocyanic acid, trimeric isocyanic acid A melamine derivative such as an amine dimeric isocyanate, a benzoanisamine, an acetaminophen, or a Guanidin compound. The liquid crystal polymer is, for example, an aromatic liquid crystal polyester, a polyimine, a pol}/esteramide, and a resin composition containing the same. Among them, a liquid crystal polyester which is superior in heat resistance, workability and hygroscopicity or a composition containing a liquid crystal polyester is preferably used. The present invention will be described by way of embodiments and examples. The embodiments and the examples are merely illustrative of the invention, and various modifications and formations may be made. The scope of the invention should be understood by those skilled in the art. + In the above embodiment, the signal line circuit device 102 is exemplified by a 4-inch adjustment used in the amplifying circuit, but the signal can be used for a device, a spectrum oscillator, a band pass chopper, and an edge r. ^ The eleventh chart is not used for the signal line circuit device (10) for the oscillator = road configuration. The signal line circuit device 1〇2 is mounted on either one of the two poles and the collector of the transistor 21〇 or on both sides, and then the oscillation frequency can be adjusted by adjusting the length of the signal 06. Figure 12 shows the signal line circuit device 1〇2 used in the bandpass filter "Maizhi, e-Xuan, signal line circuit device 1〇2 signal, two lines (10): she "other signal line 140. The device can The center frequency of the band pass filter is changed by trimming the length L close to the branch and the turn. [Simplified illustration] 316519 16 1280680 Field J 1 shows the signal line of the embodiment of the present invention The setting of A is used for the peripheral circuit configuration of part of the circuit of the amplifier. I is set such that the f 2 diagram represents the A_A of the i-th diagram, and the cross-sectional view. The third diagram shows the BB of the first figure, the cross-sectional view. FIG. 4(a) and (b) indicates the installation of the signal line on the signal line. ^ The relationship between the line of the mounting board and the mounting board in Figure 5 of the mounting board. The insulator layer of the mounting device and the signal line circuit device Layer thickness (6) (a) and (b) Table 7 (a) and (b) Table 8 (a) and (b) cousin 9 (a) to (e) The cross-sectional view of the steps of the table step. Various forms of the signal line circuit device. Various forms of the signal line circuit device. Various forms of the line circuit device. Fig. 6 shows a schematic diagram of the steps of the signal line circuit device shown in Fig. 6 (a) to (e) showing the steps of the signal line electroforming step shown in Fig. 8. Figure 11 shows the configuration of the peripheral circuit of the present invention for the oscillating state. Figure 12 shows an example of the practical use of the bandpass filter of the present invention. Figure 1] shows a real view of the present invention. FIG. 14(a) and (b) are diagrams showing the configuration of a conventional signal line circuit device. FIG. 14 (a) and (b) show a cross section of a conventional signal line circuit device. π 3165] 9 1280680 [Main components DESCRIPTION OF REFERENCE NUMERALS 100 mounting device 104 dielectric layer 108 grounding wire 112 external electrode 116, 132 photoresist 114, 134 insulator layer 130 solder 140 signal line 201 amplifier 204 coil 102 n 214 signal line circuit device 106 signal line 110 via hole 114 mode Plastic resin 120 mounting substrate 124, 126 grounding wire 13 6 circuit component 200 input circuit 202, 210 transistor 206, 212 output circuit 18 316519