TWI280635B - Memory element, array of memory cell, method of forming contact structure and apparatus and semiconductor device produced by the method - Google Patents

Abstract

Contact structures having I shapes and L shapes, and methods of fabricating I-shaped and L-shaped contact structures, are employed in semiconductor devices and, in certain instances, phase-change nonvolatile memory devices. The I-shaped and L-shaped contact structures produced by these methods exhibit relatively small active areas. The methods that determine the contact structure dimensions employ conventional semiconductor deposit and etch processing steps that are capable of creating readily reproducible results.

Description

1280635 12300twf.doc/g IX. Description of the Invention: [Technical Field] The present invention relates to a semiconductor device and a method of fabricating the same, and more particularly to a method of fabricating a contact structure for a phase change memory device, comprising A memory element and a memory cell array of a contact structure, and an electronic device and a semiconductor element manufactured using the method. ‘ 【Prior Art】 Solid and sufficiency components are widely used in the field of electronics. Typical memory includes dynamic random access memory (DRAM), static random access memory (SRAM), read-only memory (QM), configurable only k, body (EPROM), and electrically erasable Read-only memory (E2pR〇M) and flash 1 memory, etc., can be divided into two major categories of volatile and non-volatile memory. The main components of E PROM and other scales (4) are basically floating-effect field-effect transistors, and in the case of stylized any memory bits, the charge is stored in the field-effect transistor. However, such a record can be reprogrammed in a limited number of times, and its stylization speed can be quite low. In addition, although the lack of coffee 0M, E2PR0M and flash memory notes. _ not in the order of the shell material update (four) eshing) 'but with the volatile dram components =, it still has a lower storage density, larger size and manufacturing The cost is high and has been composed of phase change memory cells, which can be randomly accessed and stored in different memory cells. In this paper, "memory material" - a material that can cause structural phase transitions due to external stimuli, such as phase transitions such as chalcogen 1280635 12300 twf.doc/g (chalcogenide) materials (4). The state-structure state is usually between the second structural state of the fourth phase, the normal phase of the amorphous phase, and the second structural state of the daytime, the electrically-switched material may also be between the fully amorphous state and the completely crystalline state. The evening is not _ bureau ° 卩 orderly state m read, as long as the shape can be 1 difference. These materials also have a true transmissive crystalline phase, semi-crystalline phase, amorphous phase or semi-amorphous phase with resistance values. This resistance value can be - directly before it is reset, and can represent the physical state of the material, such as crystallization. Due to the considerable resistance change of the phase change memory material, it can be tolerated by Newfoundt II. in. A possible way to achieve this goal is to encode the binary information in an analogy manner, and to map a plurality of bits of the encoded binary data to one of a plurality of different resistance values, and then to programmatically- Memory cell. Thus, the phase change type of memory can be operated as a conventional binary memory or as a memory having a carry value greater than two. Typical materials suitable for use as phase change memory materials include various sulfur-containing materials. Typical chalcogenide materials used as phase change memory materials may, for example, contain cerium (Te), tar (Se), cerium (Ge), strontium (Sb), Bi), erbium (pb), tin (Sn), At least one of and/or oxygen of Ashen, sulfur (S), strontium (Si), and phosphorus (P). Such a non-volatile memory component can be fabricated, for example, using a monolithic chalcogenide material, and at least in theory, the resulting memory structure can store one bit of data with only a small wafer area, Obtaining essentially high-density sensation, however, solid-state memory components such as phase-change memory components (s〇lid_state 1280635 12300twf.doc/g

The common feature of reading nor^leviee is its high power consumption, especially when setting the memory component. Even if the CO power consumption of the component is still not important, the ruler ==; the power cell (P_Cell) power supply Portable type; therefore, the power consumption of the two-body component is a problem that must be prioritized. &amp; The reading of the furnace material, the cell must be made - the current pulse passes through the shell The field voltage, current, and power of the component vary depending on the size of the IkTG component and the contact window area, so that a smaller contact can produce a smaller wire area from a correspondingly lower power consumption. The body manufacturing technology makes the chalcogen memory element (4), and the minimum contact window size that can be achieved is limited by the lithography machine. For the integration of such components with many cutting-edge semiconductor technologies, such a size may cause the current. The voltage is too large or the switching time is too long' and the cycle life is too short. In addition, the conventional = stone two private manufacturing method often cannot efficiently and reliably manufacture all the consistent memory components required for large memory 7-pieces. Therefore, the industry does not need to be reduced in size. The structure of the contact window and the method of manufacturing the contact window of the phase change memory element are sinful, and the power required for stylizing the memory element is low, and has other advantages. In view of the foregoing needs, the present invention proposes an I-shaped and L-shaped contact structure, and the interface of the /y and V-body layers has a relatively small cross-sectional area (or a contact area). The material of the shape and the L-shaped contact structure can be electrically conductive. Materials or memory materials. 1280635 12300 twf.doc/g The present invention is, for example, a cost-effective step in the field of semiconductor devices, as it provides a method of fabricating ultra-small contacts (4), which can further reduce the size of semiconductor components. Further, in the manufacturing method of the present invention, each contact area is only the side of the support structure (professional definition), and there are better rules and a wider process margin, and there is no useless structure. In the embodiment of the invention, the memory material may include a phase of sulphur, such as sulphur, which is a well-known process in the field of semiconductor fabrication, and a reproducible method to produce a process that is fairly consistent. Ϊ:= Align yourself to the top electrode of the contact structure to form a self-aligning, ^^-shaped contact structure array. This feature can be used to increase the number of microwires and/or _\ in addition, due to the support structure The pitch is a bit ', and the angle is not too small, so the button engraving process of the support structure is easy to control. Method / Γ Month - The embodiment proposes a 1-shaped contact structure and its manufacturing aspect, 'the system is placed The structure of the structure on the base of the narrow county ancient #贝σ蛉 electric material or § recall material. The cross section of the contact structure is in the same way as the English * letter "1,, or "1,", and will be later "Implementation χ" 邛 中 以 以 以 辅助 。 。 法 法 法 法 法 法 法 法 法 法 法 法 法 法 法 法 法 法 法 法 ^ 法 法 法 法 ^ ^ ^ ^ ^ ^ ^ ^ ^ 实施 实施 实施 实施 实施With feet. 2 electrical memory materials. The section of the contact structure is "real square", which is similar to the letter "L" of the central text, and will be explained by a pattern in the later part of the "ι = formula". The present invention further includes an embodiment comprising a memory element comprising: 1280635 12300 twf.doc/g. The embodiment further comprises at least a partial placement or L-shaped contact structure configured in such a way that the Couplingly coupled. This embodiment further includes, for example, a phase change profile which is at least partially disposed in a 1- or 1-jointed material. In addition, the top conductive member and the memory one: , *乍 are also interfaced' and the memory element may further include a transistor or a pole body as an access element. An example - the memory includes at least a portion of the memory formed in the substrate. The arrays are arranged in rows and columns, and the memory elements are at the intersection of rows and columns. Each of the memory elements includes an access element that couples the metaphysical element to a bottom conductive member of the column. It is to be noted that, although the foregoing and the following elements/devices and methods are described by way of a functional description, the scope of the invention is not limited by the terms of the method, the device, or the steps, but rather Defined according to the full scope allowed by the theory of equalization. The above and other objects, features, and advantages of the present invention will become more apparent <RTIgt; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT OF THE INVENTION The preferred embodiments of the present invention will be described in detail in the accompanying drawings. . Also, please note that all drawings have been simplified and their size ratios are not necessarily accurate. Meanwhile, the present embodiment is clearly described for convenience, and the scope of the present invention is hereinafter employed using top, bottom, left, right, 1280635 12300 twf.doc/g upper, lower, upper, lower, front, and rear. It should be construed that the embodiment is limited in any way and not ^^ but it is merely exemplary and non-limiting, that is, the T text only discusses the real, but the ride can be interpreted to cover the embodiments. __, Dun Shu (four), the mouth should be in the application for full-time _ defined by the invention. Please also understand that the structure of ίί does not cover the complete manufacture of memory cells. The invention can also be applied together with various 1C manufacturing techniques commonly used in the industry, and the towel can only be used in the usual process steps which can be understood by the present day. As for the money, the field of semiconductor components and processes of the company is clearly defined. The following mainly describes the memory of the phase change memory material (4), the domain cell, and the I or L shape with a small active area. A method of manufacturing a contact structure. Further, referring to the drawings, FIG. 4B shows the background art of the present invention, and FIGS. 4A and 4B are perspective views of the memory cell of the embodiment of the present invention/the flow of FIG. 5 to manufacture the shape and the L-shaped structure. A memory cell, in which the contact structure is made of a conductive material or a memory material. These steps are illustrated in Figures 7 through 25B, but the structure of Figure 25A/B uses a transistor as the access element rather than a diode. Referring to FIG. 1, which is a plan view of a wafer 10 (eg, a semiconductor wafer), one or more integrated circuits may be formed thereon, and may be divided into a plurality of W crystals 12, which may be packaged into 1 (: wafer. Fig. 2 is a schematic block diagram of a substrate including a memory element which is located in the portion 1280635 12300 twf.doc/g of the crystal 12, and the crystal 12 may include - IC memory. One or more memory arrays 20 are included. The illustrated memory array=14 can be coupled to the control circuit 16. The control circuit 16 selects the appropriate row and column coordinates of the wires to access the memory array 2〇, Figure 3 is a schematic diagram of the method according to the embodiment of the present invention. Figure 2 is a schematic diagram of a portion of the memory cell array 20; = kg constitutes a basic earth comprising a plurality of memory cells 22, Generally arranged in a vertical array ί line its 24 mothers: row f memory cells 22 basically share an electrical connection, that is, the melon line 24, the mother-column memory cell 22 is basically shared - the electrical P-bit word line 26. In a typical embodiment, each bit line, the conductive member forms 'and each word is 26-by-top lead Structure _ f. As is known in the art, the control circuit 16 of Figure 2 selects the pair of 2f = to activate the corresponding access element, thereby reading and writing each of the two I: 22. The access element may include electricity. Crystal or diode. Fig. 1 is a flow chart of a method for forming a memory cell according to an embodiment of the present invention. This is an ! shape or an l-shaped contact structure made of a conductive or memory material, and a diode is used as an access element. ^ 〇 3〇—Beginning to provide a bottom conductive member, which according to the subsequent operation, the embodiment of the memory cell fabricated by the method of Figure 2 shows that the bottom conductive member 2〇(M system acts as The bit line. The process steps for forming the bottom conductive member 2GG (step 3G) are shown in Figures 6-9. Step 35 is to form an access element, which in the embodiment is a doped stone The dipole body 225 and the second layer doped stone urethane 25 〇 are formed by a diode, and the forming step is shown in Fig. Μ. 11 1280635 12300 twf.doc/g Next, the material may include a conductive material. The j-shaped contact structure 4〇〇 can be formed by two steps 4〇~65', which are shown in Figures 16~18 and 19A, 20A, 21A After the contact structure _ is formed, the step (7) is used to form a top conductive member (ie, a word line). For example, a conductive material (for example, a thin film) is deposited on the structure of the branch as follows. After the v &amp; 50 and subsequent steps 55 to 65 are completed, the phase change memory such as the memory material or the chalcogenide material is further circulated (4) _, as shown in FIG. 2; ^ is not connected, and the step 75 is used to deposit the top conductive member 700. The material 'as shown in Fig. 23A. Another type of conductive structure forming a conductive material _ is selected as follows: 2: t: I0: 100 is formed into a material including a 1-shaped contact structure of a memory material. In the formula. Guang Tomb iliG5 is the side step of Figure 2, which is to pattern each layer above m2r to form word lines and memory cells. A two-dimensional view of the shed, except for the one-shaped conductive structure, another embodiment, which is opened two: ^ is prepared 200 (step 30)' as shown in Figs. Then, as in the layer of FIG. 4A, the doped stone material 225 and the second layer of doped stone material 250 are formed to form a polar body access element (dipping, as shown in FIG. 1b. The cow 40~65 system forms an L-shaped conductive structure. _, as shown in Figures 16 to 18 and / 20 Β, 21 ,, the material thereof includes, for example, a conductive material. A phase change memory material such as a bovine material or a chalcogenide material, as shown in Fig. 22A, 'the next step 75 deposits a top conductive The material of the member is as shown in Fig. 23A. Furthermore, as in the case of the 接触-shaped contact structure, the l 12 1280635 12300 twf.doc/g contact structure can also be changed to the memory material or the phase change material according to steps 8G to (10). Forming, rather than conducting, a conductive material. Next, an etching well (Fig. 105) shown in Fig. 24 is performed to visualize each of the above-mentioned conductive members 2 to form a word line and a memory cell. The steps of forming the conductive member and the diode access element are shown in the accompanying steps 6 to 15. In particular, FIG. 6 is a semiconductor substrate 148 on which a first oxide-doped oxide (eg, a dioxy-cut layer) is deposited. In the cross-sectional view, FIG. 7 illustrates the case where portions of the oxide layer 150 are etched into a trench 175 by conventional lithography. Figure 8 Green Figure 7: == formed in the first oxide layer 15 ° _.). = Erxi, Fujing Shixi, Crane, Copper, Ming Copper Alloy, Tongluo Gold or a combination thereof, or other similar materials. The surname method ί shows that portions of the first layer of conductive material in the structure of Fig. 8 are removed by a back-to-last method or CMP, and the first-oxide layer 15 == case is extinguished. This step produces a bottom conductive member 2〇〇 that can serve as a memory array. The first layer is formed on the dry ami 兀, the urethane, and the first layer 225 is opened, and is formed in the first layer of the doped stone material, and the second layer is 25G (step 35). . In the example of the example, the material of the doped coffin 225 includes an N-degree of change, for example, about l〇i5~1〇17/3 · cedar, which is mixed with bai/chen, including P+ doped shixi, 1 exchange, The material of the curved layer is changed to the material of the stone material 250, and the wavelength of the doping is, for example, about 1〇18~1〇2〇3. Referring to FIG. 12, the structure of the U is shown in FIG. The mouth, the middle, the second layer and the first layer are mixed with 13 1280635 12300 twf.doc/g. The stone materials 250 and 225 are engraved into a diode access element (the production of the step ' 'this access element In the embodiment in which the bottom conductive member 2 is in operative contact with the second conductive member 2, it may also be N/P/metal (225/25 coffee _: described P (10) / 225/200) structure. P or N doping Shi Xi can change the south rectification ratio (rectiflcati〇n plus 1〇) and high current density, and make it have low contact resistance at both ends. Although, as shown here, it is a second, but in the modified embodiment Other types of access elements, such as gold-hydrogen (MOS) elements, may be applied, but are not limited thereto. "Figure 13 is a top view of the structure of Figure 12, and Figure 12 is a 12-12, cross-sectional view of Figure 13. As shown in FIG. 14, a second layer of oxidized material is formed on the second layer of doped stone 225 and 250 after etching, and 275 (step 35) is formed, for example, including two formed by CVD. Cerium oxide. Next, the structure of FIG. 14 may be subjected to a CMP or etch back process to remove the second oxidized material milk until the first layer of doped coffin 250 is exposed, thereby forming the structure of FIG.

Referring to FIG. 16 , a pad material layer 3 〇〇 is formed over the second layer of the doped material 25 〇 and the first oxide layer 225 (step 4 〇), and the material thereof may include, for example, hafnium oxide or tantalum nitride. Or some other oxide or non-oxide material. In an embodiment, the material of the pad material layer 300 may include cerium oxide formed by CVD. Figure 17 illustrates the situation in which the pad material layer 300 of the structure of Figure 16 is patterned (step 45) in a photolithographic etching step. The pad material layer 300 is patterned into a wrap structure 310 which is then used for the formation of an I-shaped or L-shaped contact structure. The support structure 310 includes sidewalls that operatively extend over the top surface of the second layer of doped stone material 250. 14 1280635 12300twf.doc/g FIG. 18 illustrates the formation of a film layer 395 on the junction structure 310 in accordance with an embodiment of the present invention (step % versus comparison), the sidewalls of the support structure 31G are directly used to shape The I-shaped or L-shaped connection structure therefore does not require any cover-layer mosquito-repellent contact structure. Provides better current density control, for example, current density can be reduced in the foot of the shaped gamma-contact structure. The material f of layer 395 can be followed by (step 50), or a thin memory material or phase change material (compare step 395 to form the structure of Figure 19A (step; 5? compared to step 85), which is removed A plurality of levels VIII of the film layer 395 are formed on the support structure 310 to form a conductive spacer (or a 触-shaped contact cover 4, the thickness of which is labeled as follows. The film layer is removed 395 m). The selectivity of the film layer 395 is high. In the second oxidizing material 275, the alternative j = tf _ material 25 (). In the embodiment of 19A, a small portion depends on the thickness of the film layer 395. The ruthenium film layer 395 can be deposited by Qianyan or (10) method. ^ 二衣孝王 can precisely control the adjustment deposition time of the film layer 395. As shown in Fig. 2, it is shown that the conductive spacer or L-shaped contact structure layer 4〇5 of the present invention is formed on the film layer 395 layer of the structure of Fig. 18 = almost uniformly formed in the structure: face: C The characterization of the brain structure through the --received sequence results in an oxide between 1280635 123 OOtwf. doc/g = and the structure of the 41G 'where _ sequence includes - the non-isotropic side of the two people. Non-isotropic or: The deoxidation layer is called the horizontal part of the figure (4), == the second part of the second part and the oxide layer of the part of the lower level. The side sequence contains, for example, two non-isotropic buttons.

The selectivity of Hi for the oxide layer 405 is higher than that of the thin film layer 395 ^ ίί ΐ, for example, the pressure and power can be varied to accelerate the ions vertically,

bevel. After the last name, the remaining oxide spacers are rounded or curved = and can be used to define an L-shaped contact structure in the subsequent side, wherein the exposed portions of the film layer are all removed. Then, in the second anisotropic meal, the selectivity of the film layer 395 is higher than the oxide spacers and the support nodes.

410 2nd 7th emulsion layer 275 engraving agent to form an L-shaped contact structure. Another alternative is that the side sequence includes a single-material-to-received step, which removes the oxide layer 405 and the plurality of portions of the film layer 395. The etchant is used to select the oxide layer 4〇5 and the film layer 395. The property is higher than the structure 310 and the second oxide layer 275. Additionally, the method of controlling the length of the foot of each of the haptics 410 is, for example, controlling the thickness of the oxide layer 4 〇 5 and/or the degree of anisotropy of the etch sequence or other related characteristics. In another exemplary embodiment of both the I-shaped and the 1-shaped contact structure, which may be considered as a blade contact, the sidewall thickness 450 may be approximately !·!~ 〇〇〇 nanometer, and in an example Can be 1 〇〇 nano. The material of the film layer of FIG. 18 may include a conductive material such as titanium, tungsten, titanium nitride, titanium tungsten alloy, TixSiy, titanium nitride|S (TixAlyNz) or a combination thereof, or the like material. . &quot;Hearthead 16 1280635 12300twf.doc/g In a modified embodiment in which the I- or L-shaped contact structure is formed of a memory material, a similar process may include depositing a memory material on the support structure and etching it in a process similar to the foregoing. This memory material is used to form the sidewalls of the memory material defining the shaped or L-shaped contact structure. The memory material of the exemplary embodiment may include, for example, ruthenium, ruthenium and hoof (such as Gejl^Te5) formed on the support structure 310 by a sputtering process, and the thickness (450) is (U~10 〇〇 nanometer) And in an example about 200 nm. ..., the above two types of deposited film layers are in operative contact with the top surface of the second layer of doped coffin 25, and alternatively by Contact plug 84〇

It is operatively coupled to transistor access element 810, as shown in Figure 25, 盥25β. -, I FIG. 20A illustrates the support structure 31〇 structure 400 of the structure of FIG. 19A, the second doped stone material 25〇&amp; second oxide material 27^square 5()() (step 6G and comparison step 9G) The situation. The insulating material 500 may include, for example, TE〇S-stone oxide, SOG, BPSG or SiO 2 . In Fig. 21A, the surface of the structure of Fig. 20A is made of CMp flattened = = the upper surface of the field is exposed. When the upper end of the θ/shape or ^-shaped contact window is exposed, the contact surface of the = = wide contact area is stopped. However, since the size of the contact surface is due to the contact contact: 2: mouth: the top surface of the heart 310 is swelled by the king, and is formed substantially parallel to the support structure by the chemical machine (step 65 and comparison step 95). This process of mechanically grinding a uniform width provides better control of the size of 1280635 12300 twf.doc/g. In the actual closing towel, the CMp can be stopped at an intermediate position between the above two situations to adjust the cross-sectional area of the shape contact. ^ Figure 20B! A layer of insulating material is formed on the support structure 3i, l-type contact oxide material 275 of the structure of Fig. 19c =: using the same technique as described above to generate the diagram L b, not in Fig. 21A, structure 1 The memory structure 600 is deposited on the contact structure 400, the support structure, and the insulating material 500. (Step 7 and the case. Thus, the deposition of the yakisaki material, ie, the touch surface, the top surface of the contact structure 400 is operatively contacted. Connected to 400 ^ mn 6 〇〇 ^ ^ (Figure service) and the character two Geng You 1 疋 with a 1-shaped contact window thickness of 450 thickness is about 0.! ~ _ 2 2 It can be deposited in the antimony process, and 223 缘千坊不, and in an example about 200 nm. Contact structure 410. 1 Figure ^ Figure 3 similar structure 'but it has L-shaped support structure 310 and '^ B structure L-shaped contact structure The situation of the _ _ _ _ 露出 露出 露出 露出 露出 露出 露出 露出 露出 露出 露出 露出 露出 露出 露出 露出 露出 露出 露出 露出 露出 露出 露出 露出 露出 露出 露出 露出 露出 露出

The material of the contact structure 410 can be in contact with the L and the surface of the conductive material. As in the case of the I-shaped contact structure 400 1280635 12300twf.doc/g, the area of each contact surface defined by the interface of the L-shaped contact structure 410 and the memory material 6〇〇 can be adjusted in some ways, in particular to control the L-shape. The method of contact structure 41 has a thickness 450 (Fig. 19C) and a word line width 750 (Fig. 24). In the embodiment in which the memory material is formed in FIG. 22B, the memory material 600 is formed over the shaped and/or L-shaped contact structure of the conductive material; and other embodiments of the present invention different therefrom are in the shape of the memory material. A conductive material is formed over the / or L-shaped contact structure (step 1). In this embodiment, the insulating material (500) is deposited over the shaped or L-shaped contact structure (step 90), followed by any of the above-described CMp processes (step %). Step 1 is formed in the memory material! The shape or the L-shaped junction material _) may include, for example, titanium, crane, titanium nitride, titanium crane ^ = (Tlxsly), titanium nitride (TixA1yNz) or a combination thereof, and other similar materials are typically used in the embodiment. The conductive material may include ~, deposited by a hetero process, having a thickness of about 10 nm to 10 nm, and in one example being 4 〇〇 nm. Figure 23A illustrates the formation of a layer of electrically conductive material on the structure of Figure 22A which may include a polycrystalline stone, a crane, a copper, a shaft alloy, a stellite copper composite, or other similar material. In a typical embodiment, the hopper 700 may comprise a surface-deposited crane having a thickness of about 1 leg to the material of FIG. 23B. The formation of a layer of electrically conductive material on the structure of FIG. 22B may be as described above. The method is formed. Fig. 24 is not shown in Fig. 23. After the structure is engraved (step ι 5), the vertical line 13: ^ _ face view ‘that is, the hatching system corresponding to Fig. 24 is perpendicular to the 12_! 2 of the figure. In addition, the structure of the Tujia structure (step Qingmai 19 1280635 can also have a similar cross-sectional structure as in Fig. 24. By the etching step of the structure of Figs. 23A and 23B, the top conductive member or the word line can be self-aligned with the I shape or The L-shaped contact structure 400 or 410 in which the button is stopped on the upper surface of the bottom conductive member 200 to form a word line and an Afe cell. In a modified embodiment in which the access element is not used, the last name can be continuously passed to The I-shaped or L-shaped contact structure 400 or 410, or can continue to pass through the bottom conductive member. According to a typical embodiment, the width of the top conductive member 700 is about 75 丨; between 10 nm and 1 μm; In an example, it is approximately. The word line width 750 determines the I-shaped and L-shaped contact structures 4〇〇 and 41〇.

The method of thickness and width 750 of the active area of the spur top can be used to form a relatively small cross-sectional area. For example, when the width of the film layer is 45 〇 且 and the width 750 is about 10 〇〇 nm, the active area of the cross section of each j-shaped or L-shaped contact structure is about 25 (W. This area corresponds to the circular contact structure. The diameter 'is a width of about 5 () _ of the square riding structure. Therefore, the ampere-area method can obtain a smaller area than the conventional method, so the lithography process is less restricted.

The components of the memory cell include a top conductive member or a word "I-shaped contact structure implementation member or word line 870, note 20 1280635 12300 twf.doc / g memory material 860, I-shaped contact structure 850, contact plug 840, bottom Conductive member or bit line 830, doped germanium regions 820 and 810, and substrate 800. Similarly, the perspective view of Fig. 25B shows an embodiment in which an L-shaped contact structure is formed including a transistor as an access element or a manipulation member. The components of the memory cell include a top conductive member or word line 870, a memory material 860, an L-shaped contact structure 855, a contact plug 840, a bottom conductive member or bit line 83A, doped germanium regions 820 and 810, and The substrate is 8 inches. In summary, it is understood by those skilled in the art that the method of the present invention can make semiconductor components easier to form. Such components are generally read-only memory components, and in particular, read-only materials are used in integrated circuits. Memory component. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to be used in the context of the present invention. Any person skilled in the art may make some modifications and refinements without departing from the spirit of the present invention. Therefore, the scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a top plan view of a wafer having a bee polycrystal. Figure 2 is a block diagram of the substrate of a memory cell array on a portion of the crystal. Memory composed of memory cells I-shaped contact structure is shown in Fig. 3 is a circuit diagram of a portion of a cell array fabricated by the method of the present invention. 4A is a perspective view of a memory cell made in accordance with an embodiment of the present invention. Fig. 4B is a perspective view of another memory cell in accordance with the present invention. L-shaped contact structure made by the embodiment 21 1280635 1230〇twf.doc/g FIG. 5 is a flow chart of a method for manufacturing a memory cell according to an embodiment of the present invention. Fig. 6 is a partial cross-sectional view showing the semiconductor substrate after the previous step of the method for fabricating the I-shaped or L-shaped contact structure memory cell according to the embodiment of the present invention. Figure 7 continues with Figure 6, where the oxide layer has been partially removed. Figure 8 continues with Figure 7, which has formed a first layer of electrically conductive material. Fig. 9 shows that the conductive material has been partially removed to form a bottom conductive member. Figure 10 continues with Figure 9 'which has formed a first layer of doped stone, which will later be defined as part of the diode access element. Figure 11 continues with Figure 10, which has formed a second layer of doped coffin, which will later be defined as another portion of the diode access element. Figure 12 continues with Figure 11 which has been etched to form a diode access element. Figure 13 is a plan view of the structure of Figure 12. Figure 14 continues with Figure 13 which has formed a layer of oxidized material. Figure 15 continues with Figure 14 showing the structure after chemical mechanical polishing. Figure 16 continues with Figure 15 which has formed another layer of oxidized material. Figure 17 continues with Figure 16 which has been etched to form a support structure. Figure 18 continues to show the formation of a layer of conductive material or layer of memory material covering the support structure. Figure 19 is continued from Figure 18, which has been formed by non-isotropic engraving! Shape contact, famous structure. Figure 1 is also a continuation of the figure is, which further forms a 4 匕 layer on the conductive or memory material layer. Figure 19C continues with the Β 19 Β , which has been anisotropic — and forms an L-shaped 22 1280635 12300 twf.doc/g contact structure. A contact structure is formed over the shape of the contact structure formed above - Fig. 20A is continued from Fig. 19a, which is already in the i layer of insulating material. Fig. 20B is continued from Fig. 19c, which is already in a layer of insulating material. Contact Contact Figure 21A is continued from Figure 20A, which has been CMP; the top surface of the φ structure. Bao Lu out 1

Figure 21B is continued from Figure 2, 〇β, which has been CMP and the top surface of the structure.稞路出L Figure 22A continues with Figure 21A, which shows the formation of (iv) contact junctions after deposition of memory material. 9 garments Fig. 22B is continued from Fig. 21B, which shows the formation of an L-shaped contact after depositing a memory material. Fig. 23A continues with Fig. 22A, which shows the formation of a dome contact after the formation of the top conductive material. The right side Fig. 23B is continued from Fig. 22B, which shows the state in which the roll forming the L-shaped contact structure is formed after the formation of the top conductive material. Figure 24 is a diagram showing the structure of Figure 23A or 23B after etching definition, the viewing direction being perpendicular to the viewing direction of Figures 23A and 23B. Figure 25A is a perspective view of a memory cell of an I-shaped contact structure fabricated by a method in accordance with another embodiment of the present invention. Figure 25B is a perspective view of a 1-shaped contact structure memory cell fabricated by the method of other embodiments of the present invention. [Main component symbol description] 23 1280635 12300twf.doc/g 10 : Wafer 14 : IC memory 18 · Wire 22 : Memory cell 26 : Word line 148 : Semiconductor substrate 175 : Ditch 225 : First layer doping 矽Material 275: second oxide layer 310: support structure 400: I-shaped contact structure 410 · L-shaped conductive structure 500: insulating material 700: top conductive member 800: substrate 830: bottom conductive member or bit line 850: I-shaped contact Structure 860: Memory Material 12: 1C Crystal 16: Control Circuit 20: Memory Cell Array 24: Bit Lines 30, 35, . . . , 105 • Step Number 150: First Oxide Layer 200: Bottom Conductive Member 250: Two-layer doped coffin 300: pad material layer 395: film layer 405: oxide layer 450 · conductive structure thickness 600: memory material 750: word line width 810, 820: doped germanium region 840: contact plug 855: L-shaped contact structure 870: word line 24

Claims (1)

1280635 12300twf.doc/g X. Patent Application Scope A method for manufacturing a contact structure, comprising: depositing a pad material over a substrate having a lower conductive structure; etching the pad material to form at least one of a plurality of sidewalls a support structure; depositing a first material over the at least one support structure; and u ' some 恻 == at least -1 contact structure, which is located there, and has electrical connection with the lower conductive structure The upper end is opposite to the upper end; and the upper and lower sides of the system are formed with an upper conductive structure, and the upper end of the upper contact structure is electrically connected. The manufacturing structure of the contact structure described in the first item of the method includes: to the two-position structure including at least the word line, and the lower conductive junction method, 3 two! Please specialize in the contact structure described in item 2 The manufacturing side should; one: the polar body is disposed in the at least -1 contact structure and the raw, the manufacturing side of the contact structure described in the first item of the patent scope: = the at least one-shaped contact structure formed Its lower end has a foot and becomes a ^-L contact structure. 5. The manufacturer of the contact structure of claim 4, wherein the upper conductive structure comprises at least one word line, and the lower conductive structure comprises at least one bit line. The method of manufacturing a contact structure according to claim 5, wherein at least a diode is disposed in the at least one contact structure and the 25 1280635 12300 twf.doc/g of the at least one bit line between. 7. The method of fabricating a contact structure according to claim 5, wherein at least one transistor is disposed between the at least one L-shaped contact structure and the at least one bit line. 8. The method for manufacturing a contact structure according to claim 1, wherein the method for forming the first material to form at least one I-shaped contact structure comprises: a first material to remove a plurality of horizontal portions of the first material and leaving the second material on at least one of the at least one of the sidewalls; And at least - forming the second material to expose the at least-support structure and forming at least one I-shaped contact structure. The method of manufacturing the device according to the fourth item The method of forming a material into at least one L-shaped contact structure comprises: after the first material is formed, forming a second material over the substrate; and surname the material: to remove the second material Horizontally adjacent and retaining the second material on at least two of the sidewalls of the at least one support structure; Wu = one =, the second material, the at least one support structure, and the bottom Configuring a layer of third material; and planarizing the third material to expose The at least one of the at least one L-shaped contact structure is formed. The conformal structure of the contact junction 26 1280635 12300 twf.doc/g according to any one of claims 1 to 9 The first material includes a layer of a conductive material, and the upper conductive structure comprises a layer of a memory material. The method of manufacturing the contact structure according to claim 10, wherein the memory material comprises a chalcogen The method of manufacturing a contact structure according to any one of the preceding claims, wherein the first to include a bicycle. 13 = the contact structure of claim 12 The manufacturer/seven material includes a chalcogenide material. 14. A semiconductor device comprising: a substrate having a lower conductive structure; at least a stent-supporting structure having a plurality of sidewalls on the substrate The secret contact, the structure is located at least on the sidewalls, and the lower end of the electrical structure is electrically connected to the lower end and opposite the lower end, and is located on the upper surface of the at least --contact structure Two semiconductors H structure (four) upper end connection. The lower conductive layer has a plurality of sidewalls to the y|, ^ -L contact structure two support structure, located on the substrate; upper, and has the lower conductive, 纟 /, system located At least one of the sidewalls is opposite to an upper end; and a lower end of the electrically connected connection and an upper conductive structure with the lower end, the passer, and the at least one L. The upper end of the upper 'contact structure of the L-shaped contact structure is electrically connected.