TW200618171A - Memory element, array of memory cell, method of forming contact structure and apparatus and semiconductor device produced by the method
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Memory element, array of memory cell, method of forming contact structure and apparatus and semiconductor device produced by the method
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Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Semiconductor Memories
(AREA)
Abstract
Contact structures having I shapes and L shapes, and methods of fabricating I-shaped and L-shaped contact structures, are employed in semiconductor devices and, in certain instances, phase-change nonvolatile memory devices. The I-shaped and L-shaped contact structures produced by these methods exhibit relatively small active areas. The methods that determine the contact structure dimensions employ conventional semiconductor deposit and etch processing steps that are capable of creating readily reproducible results.
TW93135393A2004-11-182004-11-18Memory element, array of memory cell, method of forming contact structure and apparatus and semiconductor device produced by the method
TWI280635B
(en)
Method of manufacturing a sonos memory device with optimized shallow trench isolation, a sonos memory device with optimized shallow trench isolation and a semiconductor device comprising such a sonos memory device
Flash memory device and method of manufacturing the same including a string structure having source select lines, a number of word lines, and drain select lines
Semiconductor device multilayer structure, fabrication method for the same, semiconductor device having the same, and semiconductor device fabrication method