TW200618171A - Memory element, array of memory cell, method of forming contact structure and apparatus and semiconductor device produced by the method - Google Patents

Memory element, array of memory cell, method of forming contact structure and apparatus and semiconductor device produced by the method

Info

Publication number
TW200618171A
TW200618171A TW093135393A TW93135393A TW200618171A TW 200618171 A TW200618171 A TW 200618171A TW 093135393 A TW093135393 A TW 093135393A TW 93135393 A TW93135393 A TW 93135393A TW 200618171 A TW200618171 A TW 200618171A
Authority
TW
Taiwan
Prior art keywords
shaped
contact structure
array
semiconductor device
methods
Prior art date
Application number
TW093135393A
Other languages
Chinese (zh)
Other versions
TWI280635B (en
Inventor
Ming-Hsiu Lee
Rui-Chen Liu
Original Assignee
Macronix Int Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macronix Int Co Ltd filed Critical Macronix Int Co Ltd
Priority to TW93135393A priority Critical patent/TWI280635B/en
Publication of TW200618171A publication Critical patent/TW200618171A/en
Application granted granted Critical
Publication of TWI280635B publication Critical patent/TWI280635B/en

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)

Abstract

Contact structures having I shapes and L shapes, and methods of fabricating I-shaped and L-shaped contact structures, are employed in semiconductor devices and, in certain instances, phase-change nonvolatile memory devices. The I-shaped and L-shaped contact structures produced by these methods exhibit relatively small active areas. The methods that determine the contact structure dimensions employ conventional semiconductor deposit and etch processing steps that are capable of creating readily reproducible results.
TW93135393A 2004-11-18 2004-11-18 Memory element, array of memory cell, method of forming contact structure and apparatus and semiconductor device produced by the method TWI280635B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW93135393A TWI280635B (en) 2004-11-18 2004-11-18 Memory element, array of memory cell, method of forming contact structure and apparatus and semiconductor device produced by the method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW93135393A TWI280635B (en) 2004-11-18 2004-11-18 Memory element, array of memory cell, method of forming contact structure and apparatus and semiconductor device produced by the method

Publications (2)

Publication Number Publication Date
TW200618171A true TW200618171A (en) 2006-06-01
TWI280635B TWI280635B (en) 2007-05-01

Family

ID=38742552

Family Applications (1)

Application Number Title Priority Date Filing Date
TW93135393A TWI280635B (en) 2004-11-18 2004-11-18 Memory element, array of memory cell, method of forming contact structure and apparatus and semiconductor device produced by the method

Country Status (1)

Country Link
TW (1) TWI280635B (en)

Also Published As

Publication number Publication date
TWI280635B (en) 2007-05-01

Similar Documents

Publication Publication Date Title
EP1683187A4 (en) Stressed semiconductor device structures having granular semiconductor material
SG124345A1 (en) Laser activation of implanted contact plug for memory bitline fabrication
EP1918984A3 (en) Charge-trapping device with cylindrical channel and method of manufacturing thereof
GB2421116B (en) Cross-point nonvolatile memory devices using binary metal oxide layer as data storage material layer and methods of fabricating the same
EP1801857A3 (en) Multi-bit non-volatile memory devices and methods of fabricating the same
EP1577953A3 (en) Semiconductor memory device and manufacturing method for the same
EP2741332A3 (en) Array substrate and method of fabricating the same
TW200616053A (en) A method for making a semiconductor device that includes a metal gate electrode
TW200629422A (en) Method of manufacturing a capaciotr and a metal gate on a semiconductor device
TW200705616A (en) Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same
TW200725756A (en) Method for forming a semiconductor structure and structure thereof
WO2006091280A3 (en) Non-volatile electrically alterable memory cell for storing multiple data and manufacturing thereof
WO2008027163A3 (en) Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
TW200802806A (en) Semiconductor device and manufacturing method thereof
TW200623210A (en) Recess gate and method for fabricating semiconductor device with the same
TW200627590A (en) A semiconductor device and method of fabricating the same, and a memory device
TW200620541A (en) Method of manufacturing a sonos memory device with optimized shallow trench isolation, a sonos memory device with optimized shallow trench isolation and a semiconductor device comprising such a sonos memory device
TW200709415A (en) Gate pattern of semiconductor device and method for fabricating the same
TWI268580B (en) Flash memory device and method of manufacturing the same including a string structure having source select lines, a number of word lines, and drain select lines
TW200629529A (en) Memory device having trapezoidal bitlines and method of fabricating same
EP1507294A3 (en) Semiconductor device with surrounding gate
TW200727495A (en) Semiconductor device multilayer structure, fabrication method for the same, semiconductor device having the same, and semiconductor device fabrication method
TW200701406A (en) Non-volatile memory and fabricating method thereof
TW200618171A (en) Memory element, array of memory cell, method of forming contact structure and apparatus and semiconductor device produced by the method
TW200943397A (en) Semiconductor device and method of fabricating the same