；1280174 九、發明說明： 【發明所屬之技術領域】 本發明係有關於化學機械研磨技術（chemical mechanical polishing，CMP)，特別係有關於一種化學 機械研磨之研磨頭組合方法，用以更換磨耗後之拘束 環。 【先前技術】 習知化學機械研磨（Chemical Machine Polishing, CMP)設備係運用在一半導體晶圓之積體電路形成表 面作全面性平坦化（general planarization)處理，可使 沉積或鍍膜後之介電層（oxide layer)與金屬層（metal layer)表面平坦化（surface pianarizati〇n)，消除半導體 晶圓表面有厚度不均勻之階梯覆蓋度（step coverage) 差’減少設計佈局限制，提升配線密度（pattern density) 並降低缺陷密度（defect density)，進而提昇積體電路 製程之良率、可靠性與準確度。習知化學機械研磨設 備係包含有一具有複數個研磨站之研磨基座以及一研 磨頭系統，在每一研磨站上係設置有一研磨墊 (polishing pad)，並提供一研磨漿（slurry)在該些研磨 墊上，該研磨頭系統係包含有複數個研磨頭（carrier head)，用以裝載複數個半導體晶圓在該些研磨墊上進 行平坦化（planarization)研磨。1280174 IX. Description of the Invention: [Technical Field] The present invention relates to chemical mechanical polishing (CMP), and more particularly to a chemical mechanical polishing method for polishing head assembly for replacing after abrasion The restraint ring. [Prior Art] Conventional Chemical Mechanical Polishing (CMP) equipment is used for general planarization processing on the surface of an integrated circuit of a semiconductor wafer to enable dielectric deposition after deposition or coating. The surface of the oxide layer and the metal layer are flattened to eliminate the uneven coverage of the surface of the semiconductor wafer. The design layout is limited and the wiring density is increased. The pattern density) reduces the defect density, which in turn improves the yield, reliability and accuracy of the integrated circuit process. The conventional chemical mechanical polishing apparatus includes a polishing base having a plurality of polishing stations and a polishing head system, and a polishing pad is disposed on each of the polishing stations, and a slurry is provided therein. In some polishing pads, the polishing head system includes a plurality of carrier heads for loading a plurality of semiconductor wafers for planarization polishing on the polishing pads.
如美國專利第 6,602，114 號「MULTILAYER RETAINING RING FOR CHEMICAL MECHANICAL ；I280174 POLISHING，化學機械研磨用之具有多層固定環的 磨頭」所揭示者，一種習知CMP研磨頭係裝設有一 束環（retaining ring，或稱固定環），用以防止研磨時 晶圓邊緣處的研磨速率不同於在晶圓中心處的研磨 率，而對一半導體晶圓之最外圍周邊處之區域的過 研磨，所產生之「邊緣效應」（e(ige effect)，亦即是 晶圓上之周邊區域去除掉過多的物質，進而降低晶 整體的平坦性，造成晶圓的邊緣不適合積體電路之 造並降低處理良率，且該拘束環具有限位該半導體 圓與調節研磨漿之用途，在經過適當數量半導體晶 的化學機械研磨過程之後，該拘束環會被損耗而需 更換’當新的拘束環更換而裝設於一研磨頭之後， 執行一精研（lapping)步驟，以確保該拘束環之磨耗 平面度，這是因為，儘管該拘東環在裝設前有著合 的機械加工要求之平面度（標準要求為5微米），但 拘束環與研磨頭之基座結合方式係為螺栓緊迫結合 5玄拘束環在交到螺栓之旋轉緊迫力時產生大變化 平面度差異（可能高達30微米以上之誤差）。 請參閱第1圖，習知研磨頭係主要包含有一拘束 10、一 晶圓支撐組件 20(wafer support assembly)及 基座30(base)，該拘束環10係由一硬質上環部n 一軟質下環部12所組成，該拘束環1〇係具有在該 質上環部11之螺孔以及在該軟質下環部12之磨耗 14,以螺栓通過該基座30而結合至該拘束環之 研 拘 在 速 度 從 圓 製 晶 圓 要 應 面 格 該 之 環 —一 及 硬 面 螺 ；1280174 孔（圖未繪出），並且一密封膜片23(sealing film)係連 接該拘束環1 〇與該晶圓支撐組件20，使得該晶圓支 撐組件20、該基座30與該研磨頭之殼體形成一可充 氣增壓之壓力調控腔室，該晶圓支撐組件2 〇係包含有 一支樓盤 21(support plate)，一 軟膜 22(membrane)係 包覆在該支撐盤21之下表面。在組合該拘束環1〇於 該研磨頭之後，將執行一精研步驟，其係在一 CMP機 台内，先以該晶圓支樓組件2 0之軟膜2 2吸附一測試 晶圓50(dummy wafer)，該壓力調控腔室係充氣產生推 迫壓力，使得該晶圓支撐組件20施壓該測試晶圓5 0 緊貼於該CMP機台之研磨墊40,依一般標準之精研程 序’在重複換裝^一預定數量（約20至3〇片）之測试晶 圓5 0之研磨測試後，該拘束環1 〇之磨耗面1 4方可得 到一較佳之平面度，導致耗用過多的測試晶圓5 0在做 化學機械研磨調校作業與先置調整時間，此外，在實 際運用情況中，該拘束環10之磨耗面14之平面度無 法被有效確認，一旦該拘束環1 0螺接固定不當，在該 拘束環10結合於該基座30之後會導致該磨耗面14產 生相當大變化差異之平面度，以目前的精研方法及考 量在有限數量之測試晶圓（d u m m y w a ^e r)使用狀態 下，仍無法很快速的調校出並確認在每一次更換拘束 環1 〇之後其磨耗面1 4可達到合格之平面度’此係為 目前晶圓廠操作使用化學機械研磨設備所無法解決的 問題。 7 1280174 【發明内容】 本發明之主要目的係在於提供一種化學機械研磨 之研磨頭組合方法，其係提供有一拘束環與一晶圓支 撐組件，在螺接固定該拘束環與一研磨頭之基座之 後，執行一無晶圓精研（waferless lapping)步驟，其係 維持該晶圓支撐組件在一上升狀態或是無充氣施壓之 條件下，研磨該拘束環之磨耗面，以確保該磨耗面之 平面度，取代習知拘束環内置有測試晶圓之精研方 法，故不需要模擬化學機械研磨製程，解決耗用過多 測試晶圓與測試研磨調校作業佔用CMP機台過久之先 置調整時間問題。此外，能在量測該拘束環在螺接固 定後之磨耗面平面度，以確認該拘束環在螺接固定後 之堪用性。 依本發明之CMP機台之研磨頭組合方法，主要包 含之步驟有：提供有一拘束環與一晶圓支撐組件，該 拘束環係具有一結合面、一磨耗面及一開口 ，該開口 係可供該晶圓支禮組件通過，該結合面係設有複數個 螺孔’而該晶圓支撐組件係包含有一支撐盤以及一包 覆該支樓盤之軟膜；結合該拘束環與一基座，該基座 係具有複數個通孔’以複數個螺栓通過該基座之該些 通孔而螺接固定至該拘束環之螺孔；以及，進行一無 晶圓精研（waferless lapping)步驟，其係在上升該晶圓 支撐組件之條件下研磨該拘束環之磨耗面，以確保該 磨耗面之平面度。 8 1280174 【實施方式】 參閱所附圖式，太1 +發明將列舉以下之警# μ % ns 依據本發明之第一且舻· 〈實轭例說明。As disclosed in U.S. Patent No. 6,602,114, "MULTILAYER RETAINING RING FOR CHEMICAL MECHANICAL; I280174 POLISHING, a grinding head having a multi-layered retaining ring for chemical mechanical polishing", a conventional CMP polishing head is provided with a bundle of retaining Ring, or a retaining ring, to prevent the grinding rate at the edge of the wafer from being different from the polishing rate at the center of the wafer during grinding, and overgrinding the area at the outermost periphery of a semiconductor wafer The "edge effect" (e(ige effect)" is that the peripheral region on the wafer removes too much material, thereby reducing the flatness of the crystal as a whole, making the edge of the wafer unsuitable for the formation of the integrated circuit and reducing the processing. Rate, and the restraining ring has the use of limiting the semiconductor circle and adjusting the polishing slurry. After a suitable number of semiconductor crystal chemical mechanical polishing processes, the restraining ring is lost and needs to be replaced, when the new restraint ring is replaced. After a grinding head, a lapping step is performed to ensure the wear flatness of the restraint ring, because, although The East Ring has a flatness of the machining requirements (standard requirement is 5 microns) before installation, but the combination of the restraining ring and the base of the grinding head is the tight combination of the bolts. The Xuan restraint ring is pressed against the rotation of the bolt. When the force is generated, the flatness difference of the large change (which may be as high as 30 micrometers or more). Referring to FIG. 1 , the conventional polishing head system mainly includes a restraint 10, a wafer support assembly 20 and a base 30. (base), the restraining ring 10 is composed of a rigid upper ring portion n, a soft lower ring portion 12 having a screw hole in the upper ring portion 11 and wear at the soft lower ring portion 12. 14, the bolt is passed through the base 30 and coupled to the restraint ring at a speed from the circular wafer to face the ring - a hard surface snail; 1280174 holes (not shown), and A sealing film 23 is coupled to the restraint ring 1 and the wafer support assembly 20 such that the wafer support assembly 20, the base 30 and the housing of the polishing head form an inflatable pressurized pressure. Regulating chamber, the wafer support The assembly 2 includes a support plate 21, and a membrane 22 is coated on the lower surface of the support plate 21. After the restraint ring 1 is combined with the polishing head, a lapping is performed. a step of affixing a test wafer 50 with a soft film 2 2 of the wafer branch assembly 20 in a CMP machine, the pressure regulating chamber is inflated to generate a pushing pressure, so that The wafer support assembly 20 presses the test wafer 50 against the polishing pad 40 of the CMP machine, and repeats the predetermined number (about 20 to 3 pieces) according to a general standard lapping program. After the grinding test of the test wafer 50, the wear surface of the restraint ring 1 可 can obtain a better flatness, resulting in excessive consumption of the test wafer 50 in the chemical mechanical polishing adjustment operation and The adjustment time is set. In addition, in the actual operation, the flatness of the wear surface 14 of the restraint ring 10 cannot be effectively confirmed. When the restraint ring 10 is screwed improperly, the restraint ring 10 is coupled to the base 30. This will cause the wear surface 14 to produce a flatness that varies considerably. The current research methods and considerations can not be adjusted very quickly in a limited number of test wafers (dummywa ^er), and it is confirmed that the wear surface of the restraint ring can be qualified after each replacement of the restraint ring 1 Flatness' This is a problem that cannot be solved by current fab operations using chemical mechanical polishing equipment. 7 1280174 SUMMARY OF THE INVENTION The main object of the present invention is to provide a chemical mechanical polishing method for polishing head assembly, which provides a restraint ring and a wafer support assembly for screwing the base of the restraint ring and a polishing head. After the seat, a waferless lapping step is performed, which maintains the wafer support assembly in an ascending state or without inflation pressure, grinding the wear surface of the restraint ring to ensure the wear. The flatness of the surface replaces the conventional research method of the test wafer, so there is no need to simulate the chemical mechanical polishing process, and the excessive use of the test wafer and the test polishing adjustment work occupy the CMP machine for a long time. Adjust the time issue. In addition, the flatness of the wear surface of the restraint ring after screwing can be measured to confirm the usability of the restraint ring after screwing. The polishing head assembly method of the CMP machine according to the present invention mainly comprises the steps of: providing a restraining ring and a wafer supporting assembly, the restraining ring having a bonding surface, a wearing surface and an opening, wherein the opening is For the wafer support assembly, the bonding surface is provided with a plurality of screw holes' and the wafer support assembly comprises a support disk and a soft film covering the building; combined with the restraint ring and a base, The pedestal has a plurality of through holes ′ which are screwed to the screw holes of the restraint ring by a plurality of bolts through the through holes of the pedestal; and a waferless lapping step is performed. It grinds the wear surface of the restraint ring under conditions that raise the wafer support assembly to ensure the flatness of the wear surface. 8 1280174 [Embodiment] Referring to the drawings, the following 1 + invention will cite the following alarm # μ % ns according to the first and second embodiment of the present invention.
，、赞實施例，請參閱第2、3及6A 圖，首先提供有一拘走p 乐2 3及6A J果％ 1 1 0與一晶圓支樘έΗ此】，Λ， 其中第2圖係為該拘 叉撐組件120,For example, please refer to Figures 2, 3 and 6A. First, there is a detained p 2 3 and 6A J%% 1 1 0 and a wafer support Λ, Λ, where 2 For the restraining fork assembly 120,
ν 勺束％11〇之立體示t、H，铱3ISI 係為該晶圓支揮組件 τ 1 20之立體示意圖， 中，請參閱第2圖，1 α 在本實施例 其包含有一硬質上/拘束帛110係為兩件式型態， 可為單件式或其它多：及一軟質下環部112,其亦 -結合面113、一磨：式型態’該拘束環係具有 名粍面114以及一開口 115，琴紝厶 面1 1 3係為該硬質上 4〜口 ,士 長部111之上表面，該結合面113 係設有複數個螺孔丨彳 ’以供螺接固定結合至一基座 130(如第6B圖所示、 ，且該結合面11 3係可另設有複 數個疋位孔1 1 7，該磨耗面1 1 4係由該軟質下環部】i 2 之顯露下表面所提供，、 ^ 八 以供CMP製程之磨耗，該開口 115係可供該晶圓支撑組件120通過，以限位適當尺 寸（如8吋或12吋）之半導體晶圓。 清參閱第3及6A圖，該晶圓支撐組件12〇係包含 有一支撐盤121以及一包覆該支撐盤m之軟膜122, 該支撐盤121係可受到一壓力調控腔室16〇之氣壓往 下推迫’該軟膜122係包覆該支撐盤121之下表面， 用以在CMP研磨時貼觸一半導體晶圓，較佳地，該支 撲盤121係具有一對位梢126，此外，該晶圓支撐組 件120更包含有一萬向機構i23(gimbal mechanism)， 1280174 該萬向機構123係具有一萬向桿124，用以在一殼體 140之導孔142作垂直向活動（如第6C與6D圖所示）， 並且，一密封膜片125係形成於該晶圓支撐組件12〇 之環外圍。 第4圖係為一研磨頭之基座130立體示意圖，請參 閱第4及6B圖，以螺接固定結合該拘束環1 1 〇與該基 座130，該基座130係具有複數個通孔131，對應於該 拘束環1 1 0之螺孔1 1 6，並且該基座1 3 0可以有複數個 對應定位孔〔圖未繪出〕，以供對位於該拘束環 1 1 〇 之定位孔1 1 7與該支撐盤1 2 1之對位梢1 2 6，以複數 個螺栓132通過該基座130之該些通孔131而螺接固 定至該拘束環1 1 0之螺孔11 6，同時使得該密封膜片 125連接該晶圓支撐組件 120與該拘束環 110，較佳 地，在該基座1 3 0與該拘束環1 1 0之間裝設有一塑膠 墊片（圖未繪出），以增加氣密效果。接下來，再進行 一無晶圓精研（waferless lap ping)步驟。 在第一具體實施例中，係可以先組合完成該研磨頭 之後再進行該無晶圓精研（waferless lapping)步驟，亦 可在結合該拘束環110與該基座130之後直接進行該 無晶圓精研步驟，本發明並不限定該研磨頭之殼體組 合順序，請參閱第5與6C圖，在結合該拘束環11 〇 與該基座130之後，將一殼體140結合至該基座130, 第5圖係為該殼體140之立體示意圖，該殼體140係 具有一在上方之連接座141與一在下方之導孔142, 10 :1280174 該連接座1 4 1係供結合至一 CMP機台之研磨頭系統之 旋轉軸，在結合之後，該晶圓支撐組件i 20之萬向桿 124係穿套於該導孔142，可依該導孔142之軸心作垂 直活動，此外，利用習知嵌槽或嵌合孔設計使該晶圓 支撐組件1 20不會相對於該基座1 3 0作旋轉。該殼體 1 4 0之環周圍係設有密封膜片1 4 3，以氣密該殼體1 4 0 與該基座130，故在結合該殼體140與該基座130之 後，該殼體140之内壁、該基座130之内壁與該晶圓 支撐組件1 20係構成一壓力調控腔室1 60，故當該壓 力調控腔室160增施氣體壓力時，在化學機械研磨 (CMP)操作過程中，可經由該軟膜122對一在該拘束環 1 1 0之開口 1 1 5内半導體晶圓均勻地施加壓力，以供平 貼至一 CMP機台之研磨墊（圖未繪出）。通常在結合該 殼體140之後，一外殼板150係結合至該基座13〇， 以組合成一研磨頭。 請參閱第6D圖，在完成該拘束環110與該基座120 之螺接固定後，進行一無晶圓精研（waferless lapping) 步驟，其係在上升該晶圓支撐組件1 20之條件下以一 精研設備之研磨墊2 1 0研磨該拘束環1 1 0之磨耗面 1 1 4，以確保該磨耗面1 1 4之平面度，在此一無晶圓精 研步驟中，該拘束環1 1 0之開口 1 1 5内係未設置任何 測試晶圓（dummy wafer)，且該晶圓支撐組件1 20之軟 膜1 22係距離該用以精研該拘束環丨丨〇之研磨墊2 i 〇 有一適當距離，由於目前該晶圓支撐組件1 2 0在以該 :1280174 雄封膜片1 2 5彈性連接之後，在零施力時，該晶圓支 揮組件120之軟膜122與該拘束環110之磨耗面U4 之間存在有適當之水平位差，因此，使該壓力調控腔 至160係為等壓狀態，便可使該晶圓支撐組件12〇達 至】所而之上升程度，較佳地，調整該壓力調控腔室 在減壓狀態，可使該晶圓支撐組件12〇更加上升，以 避免被磨損。此外，亦可在未結合該殼體丨4〇之前， 機械固定該萬向機構123，以使該支撐盤121上升。 藉由該無晶圓精研步驟，可以降低測試晶圓之耗損數 置’而確保該拘束環11 〇在螺接固定後其磨耗面u 4 之平面度’本發明之另一功效為可以在該無晶圓精研 步驟之後，量測該拘束環i丨〇在與該基座丨3 〇螺接固 定後其磨耗面1 1 4之平面度，以控制該磨耗面丨丨4之 平面度在不大於1 5微米，較佳地，該磨耗面丨丨4之平 面度係被控制在不大於5微米，此為習知在cMP機台 上之晶圓精研步驟所無法達及。 在本發明之第二具體實施例中，請參閱第7圖，在 螺接固定該拘束環1 1 0與該基座1 3 0並且彈性連接該 晶圓支撐組件120與該基座130之後，可以在結合該 殼體140與該基座130之前，先進行一無晶圓精研步 驟，該拘束環1 1 〇與該基座1 3 0將被翻轉放置於一磨 平修整之工具機上，該拘束環1 1 0之磨耗面1丨4將朝 上，在無充氣施壓該晶圓支撐組件1 2 0之條件下，該 晶圓支撐組件1 2 0之軟膜1 2 2將低於該拘束環丨i 〇之 12 :1280174 磨耗面1 1 4而位於該拘束環1 1 0之開口 1 1 5内，以一 精研工具220研磨該拘束環1 10之磨耗面1 14,以確保 該磨耗面114之平面度。 本發明之保護範圍當視後附之申請專利範圍所界 定者為準，任何熟知此項技藝者，在不脫離本發明之 精神和範圍内所作之任何變化與修改，均屬於本發明 之保護範圍。 【圖式簡單說明】 第1圖：習知化學機械研磨之研磨頭在組合一拘束環 後進行精研步驟時之局部截面示意圖； 第2圖：依據本發明，一種CMP研磨頭之拘束環之立 體示意圖； 第3圖：依據本發明，一種CMP研磨頭之晶圓支撐組 件之立體不意圖； 第4圖：依據本發明，一種CMP研磨頭之基座之立體 示意圖； 第5圖：依據本發明，一種CMP研磨頭之殼體之立體 不意圖， 第6Α至6D圖：依據本發明之第一具體實施例，一種 CMP研磨頭在一包含有無晶圓精研步驟之組 合過程中之截面示意圖；及 第7圖：依據本發明之第二具體實施例，一種CMP研 磨頭在另一種無晶圓精研步驟中之截面示意 圖0 13 ：1280174 【主要元件符號說明】 10 拘束環 11 硬質上環部 12 軟質下環部 13 結合面 14 磨耗面 20 晶圓支撐組件 21 支撐盤 22 軟膜 23 密封膜片 30 基座 40 研磨塾 50 半導體晶圓 110 拘束環 111 硬質上環部 112 軟質下環部 113 結合面 114 磨耗面 115 螺孔 116 定位孔 120 晶圓支撲組件 121 支撐盤 122 軟膜 123 萬向機構 124 萬向桿 125 密封膜片 126 對位梢 130 基座 131 通孔 132 螺栓 140 殼體 141 連接座 142 導孔 143 密封膜片 150 外殼板 160 壓力調控腔室 210 研磨墊 220 精研工具 14ν 勺 % % % % % % IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS The restraint 帛 110 is a two-piece type, which can be a single-piece or other: and a soft lower ring portion 112, which also has a joint surface 113, a grinding type: the type of the restrained ring system has a name 114 and an opening 115, the hammer face 1 1 3 is the upper surface of the rigid upper portion, the upper surface of the inner portion 111, and the joint surface 113 is provided with a plurality of screw holes 以' for screwing and fixing to a pedestal 130 (as shown in FIG. 6B), and the bonding surface 11 3 can be further provided with a plurality of clamping holes 117, and the wearing surface 1 1 4 is composed of the soft lower ring portion] The exposed surface is exposed for CMP process, and the opening 115 is used by the wafer support assembly 120 to limit the appropriate size (such as 8 吋 or 12 吋) of the semiconductor wafer. In FIGS. 3 and 6A, the wafer support assembly 12 includes a support disk 121 and a soft film 122 covering the support disk m. The support disk 121 can receive a The pressure regulating chamber 16 is pressed downwards. The soft film 122 covers the lower surface of the support disk 121 for contacting a semiconductor wafer during CMP polishing. Preferably, the chip 121 is attached. The wafer support assembly 120 further includes a gimbal mechanism i23. The universal mechanism 123 has a universal rod 124 for use in a housing 140. The guiding hole 142 is vertically movable (as shown in FIGS. 6C and 6D), and a sealing film 125 is formed on the periphery of the ring of the wafer supporting assembly 12. The fourth drawing is a base of the polishing head. Referring to FIGS. 4 and 6B, the restraining ring 1 1 〇 and the base 130 are screwed and fixed. The base 130 has a plurality of through holes 131 corresponding to the restraining ring 1 1 0 a screw hole 1 1 6 , and the base 1 3 0 may have a plurality of corresponding positioning holes (not shown) for the positioning hole 1 1 7 located in the restraint ring 1 1 与 and the support plate 1 2 1 The pair of tips 1 2 6 are screwed and fixed to the restraint ring 1 10 by a plurality of bolts 132 through the through holes 131 of the base 130 The hole 11 6 is connected to the wafer support assembly 120 and the restraint ring 110. Preferably, a plastic gasket is disposed between the base 110 and the restraint ring 110. (not shown) to increase the airtight effect. Next, a waferless lap ping step is performed. In the first embodiment, the polishing head can be combined and then performed. The waferless lapping step may directly perform the waferless lapping step after bonding the restraint ring 110 and the pedestal 130. The present invention does not limit the order of the housing assembly of the polishing head. Referring to FIGS. 5 and 6C, after the restraining ring 11 is coupled to the base 130, a housing 140 is coupled to the base 130. FIG. 5 is a perspective view of the housing 140. The 140 series has an upper connecting seat 141 and a lower guiding hole 142, 10: 1280174. The connecting seat 141 is a rotating shaft for the grinding head system coupled to a CMP machine. After bonding, the crystal The universal rod 124 of the circular support assembly i 20 is sleeved in the guide hole 142, and can be guided by the guide The axis of the aperture 142 is vertically movable and, in addition, the wafer support assembly 120 is not rotated relative to the base 130 using conventional slot or mating hole designs. A sealing membrane piece 143 is disposed around the ring of the housing 110 to hermetically seal the housing 110 and the base 130. After the housing 140 and the base 130 are coupled, the housing The inner wall of the body 140, the inner wall of the base 130 and the wafer support assembly 120 form a pressure regulating chamber 160, so when the pressure regulating chamber 160 is applied with gas pressure, in chemical mechanical polishing (CMP) During operation, a uniform pressure is applied to the semiconductor wafer in the opening 115 of the restraint ring 110 via the flexible film 122 for flattening to a polishing pad of a CMP machine (not shown). . Typically, after bonding the housing 140, a housing plate 150 is coupled to the base 13 to assemble a polishing head. Referring to FIG. 6D, after completing the screwing and fixing of the restraint ring 110 and the susceptor 120, a waferless lapping step is performed under the condition that the wafer support assembly 120 is raised. Grinding the wear surface 1 1 4 of the restraining ring 1 1 0 with a polishing pad 2 1 0 of a lapping device to ensure the flatness of the wear surface 112, in the waferless lapping step, the restraint No dummy wafer is disposed in the opening 1 1 5 of the ring 1 10 , and the soft film 1 22 of the wafer support assembly 1 20 is away from the polishing pad used to study the restraint ring 2 i 〇 has an appropriate distance, since the wafer support assembly 120 is elastically connected with the 1280174 male sealing film 1 2 5 at the present time, the soft film 122 of the wafer supporting assembly 120 is applied with zero force. There is an appropriate level difference between the wear surface U4 of the restraint ring 110. Therefore, the pressure control chamber to the 160 system is in an equal pressure state, so that the wafer support assembly 12 can be raised. To the extent that, preferably, the pressure regulating chamber is in a reduced pressure state, the wafer support assembly 12 can be further changed. Increase it to avoid wear and tear. In addition, the gimbal mechanism 123 may be mechanically fixed to raise the support plate 121 before the casing 未4〇 is joined. By the waferless lapping step, the loss of the test wafer can be reduced to ensure the flatness of the wear surface u 4 of the restraint ring 11 after screwing. Another effect of the present invention is that After the waferless lapping step, measuring the flatness of the wear surface 1 14 after the restraining ring is screwed to the base 丨3 , to control the flatness of the wear surface 丨丨4 Preferably, the flatness of the wear surface 丨丨4 is controlled to be no more than 5 microns, which is not known in the wafer lapping step on the cMP machine. In a second embodiment of the present invention, referring to FIG. 7, after the restraint ring 110 and the base 130 are screwed and the wafer support assembly 120 and the base 130 are elastically connected, A waferless lapping step may be performed before the housing 140 and the susceptor 130 are combined, and the restraint ring 1 1 〇 and the pedestal 1 30 will be flipped over a flattened machine tool. The wear surface 1丨4 of the restraint ring 110 will face upward, and under the condition that the wafer support assembly 120 is not inflated, the soft film 1 2 2 of the wafer support assembly 120 will be lower than The restraining ring 丨i 〇 12:1280174 wear surface 141 is located in the opening 1 1 5 of the restraining ring 1 1 0, and the wear surface 1 of the restraining ring 1 10 is ground by a lapping tool 220 to ensure The flatness of the wear surface 114. The scope of the present invention is defined by the scope of the appended claims, and any changes and modifications made by those skilled in the art without departing from the spirit and scope of the invention are within the scope of the present invention. . BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a partial cross-sectional view showing a polishing head of a conventional chemical mechanical polishing process in which a lapping step is performed after combining a restraining ring; FIG. 2 is a sectional view of a CMP polishing head according to the present invention. 3D is a perspective view of a CMP polishing head wafer support assembly according to the present invention; FIG. 4 is a perspective view of a CMP polishing head base according to the present invention; Invention, a perspective view of a housing of a CMP polishing head, Figures 6 to 6D: a cross-sectional view of a CMP polishing head in a combination process including a waferless lapping step in accordance with a first embodiment of the present invention And FIG. 7 is a cross-sectional view of a CMP polishing head in another waferless lapping step according to a second embodiment of the present invention. 0 13 : 1280174 [Main component symbol description] 10 restraining ring 11 hard upper ring portion 12 Soft lower ring part 13 Joint surface 14 Wear surface 20 Wafer support unit 21 Support plate 22 Soft film 23 Sealing film 30 Base 40 Grinding 塾 50 Semiconductor wafer 110 Bundle 111 Hard upper ring portion 112 Soft lower ring portion 113 Bonding surface 114 Wear surface 115 Screw hole 116 Positioning hole 120 Wafer baffle assembly 121 Support plate 122 Soft film 123 Universal mechanism 124 Universal rod 125 Sealing diaphragm 126 Alignment 130 Base 131 Through Hole 132 Bolt 140 Housing 141 Connection Seat 142 Guide Hole 143 Sealing Diaphragm 150 Housing Plate 160 Pressure Regulating Chamber 210 Grinding Pad 220 Lapping Tool 14