CN113290426B - Method for improving polishing thickness uniformity of wafer - Google Patents
Method for improving polishing thickness uniformity of wafer Download PDFInfo
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- CN113290426B CN113290426B CN202110406099.5A CN202110406099A CN113290426B CN 113290426 B CN113290426 B CN 113290426B CN 202110406099 A CN202110406099 A CN 202110406099A CN 113290426 B CN113290426 B CN 113290426B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Abstract
The invention relates to the field of semiconductor production and processing, and particularly discloses a method for improving polishing thickness uniformity of a wafer, which comprises the following steps: polishing a plurality of test wafers which are annularly arranged by using a polishing head to obtain polished test wafers; obtaining thickness data of different positions of each test wafer after polishing; determining pressure values of different positions of the polishing head according to the thickness data; determining the shape of a correction backing plate according to pressure values of different positions of the polishing head; placing the determined correction backing plate between the polishing head and the polishing disk; and carrying out polishing treatment on the wafer to be treated on the polishing disc. And determining the pressure distribution of different positions of the polishing head according to the thickness data of different positions of the test wafer, further determining the shape of the correction backing plate, and adjusting the pressure uniformity of the polishing head by adding the correction backing plate.
Description
Technical Field
The invention relates to the field of semiconductor production and processing, and particularly discloses a method for improving the polishing thickness uniformity of a wafer.
Background
In the field of semiconductor material production and processing, the thickness uniformity of wafer processing is an important parameter for measuring the processing quality of the wafer, and the thickness uniformity directly influences the subsequent epitaxial use of the wafer and the quality of devices. The polishing process is used as the last step of semiconductor wafer material processing, and the uniformity of the polishing thickness directly affects whether the final wafer product can reach the shipping standard. Therefore, various parameters must be strictly controlled during the polishing process to ensure the final polishing quality. In actual production, due to the problems of long-term use wear of a polishing head of the chemical polishing machine or the accuracy of the polishing head, uneven pressure of the polishing head is often caused during production, and further, the thickness deviation of the whole polished wafer is large or the thickness variation of the TV3 in a single wafer (three-point thickness variation in a single wafer) is too large, so that the final product delivery is seriously influenced. Therefore, how to solve the problem of wafer polishing thickness uniformity caused by uneven pressure of the polishing head is a problem that needs to be solved.
Disclosure of Invention
The present invention is directed to solving, at least to some extent, the above-mentioned technical problems in the related art. To this end, the present invention provides a method for improving the uniformity of the polishing thickness of a wafer, which solves at least one of the above-mentioned problems.
In order to achieve the above object, a first aspect of the present invention provides a method for improving polishing thickness uniformity of a wafer, comprising the steps of:
polishing a plurality of test wafers which are annularly arranged by using a polishing head to obtain polished test wafers;
obtaining thickness data of different positions of each test wafer after polishing;
determining pressure values of different positions of the polishing head according to the thickness data;
determining the shape of a correction base plate according to pressure values of different positions of the polishing head;
placing the determined correction backing plate between the polishing head and the polishing disk;
and carrying out polishing treatment on the wafer to be treated on the polishing disc.
In addition, the method for improving the polishing thickness uniformity of the wafer can also have the following additional technical characteristics:
according to some embodiments of the invention, the polishing head is configured to measure a polishing rate of the polishing head.
According to some embodiments of the invention, the first point, the second point and the third point are located on a same line segment, and the line segment coincides with a line segment where a diameter of the test wafer is located.
According to some embodiments of the invention, the distance between two adjacent points is equal.
According to some embodiments of the invention, the first point is located inside a third point, the second point is located in the middle of the first point and the third point, and the second point is where a center of the test wafer is located.
According to some embodiments of the present invention, if the thickness data of the first point, the second point, and the third point on all the test wafers sequentially increase, it is determined that the central pressure value of the polishing head is greater than the peripheral pressure value of the polishing head;
and determining that the shape of the correction backing plate is annular according to the fact that the central pressure value of the polishing head is larger than the pressure values of the periphery of the polishing head.
According to some embodiments of the present invention, if the thickness data of the third point, the second point, and the first point on all the test wafers sequentially increase, it is determined that the central pressure value of the polishing head is smaller than the peripheral pressure value of the polishing head;
and determining that the shape of the correction backing plate is circular according to the condition that the central pressure value of the polishing head is smaller than the peripheral pressure values of the polishing head.
According to some embodiments of the present invention, if the thickness data of all or at least some of the points on the test wafer on one side is smaller than the thickness data of all the points on the test wafer on the other side, determining that the pressure value on one side of the polishing head is greater than the pressure value on the other side;
and determining that the shape of the correction backing plate is semicircular according to the condition that the pressure value of one side of the polishing head is greater than the pressure value of the other side of the polishing head.
According to some embodiments of the invention, the test wafer or the wafer to be processed is selected from any one of a silicon wafer, a sapphire wafer, a silicon carbide wafer, gallium nitride, gallium arsenide; the material of the correction backing plate is polyurethane or cerium oxide.
According to some embodiments of the present invention, the step of performing a polishing process on a wafer to be processed on a polishing pad includes: the polishing pressure is set to 350-550 g/cm 2 (ii) a Setting the rotating speed of the upper polishing head to be 35-40rpm/min; the rotating speed of the lower disc is set to be 40-45rpm/min, the temperature is set to be 20-50 ℃, the polishing time is 60-90 min, and the polishing is carried out by using 20-30% concentration alumina polishing solution, and the removal amount is set to be 7-10 mu m.
Compared with the prior art, the invention has the following beneficial effects:
the pressure distribution of different positions of the polishing head is determined according to the thickness data of different positions of the test wafer, the shape of the correction base plate is further determined, the pressure uniformity of the polishing head is adjusted by adding the correction base plate, and the uniform thickness of the whole wafer and the small thickness change of the TV3 (three points in a single wafer) in the single wafer are ensured by matching with proper polishing process parameters.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic view of a polishing pad with a wafer attached thereto according to embodiments 1-3 of the present invention;
FIG. 2 is a schematic view of a structure of a polishing pad with a wafer attached thereon according to embodiments 1-3 of the present invention 2;
FIG. 3 is a schematic view of the structure of an annular calibration shim plate according to embodiment 1 of the present invention;
FIG. 4 is an exploded view of the polishing apparatus in example 1 of the present invention;
FIG. 5 is a schematic view of a semicircular correction shim plate according to embodiment 2 of the present invention;
fig. 6 is a schematic structural view of a circular correction pad in embodiment 3 of the present invention.
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
Unless otherwise defined, all terms of art used hereinafter have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of the present invention.
Example 1
Assuming that the number of the polishing head of the machine is 1#, as shown in fig. 1-2, first, a polishing disk 2 to which 7 test wafers 1 are attached is loaded under the polishing head 3 to prepare for polishing work. Wherein, there is no correction backing plate 4 between the polishing head 3 and the polishing disk 2, the polishing operation is carried out by adopting the conventional polishing process, and the process parameters are set as follows: polishing pressure was set at 350g/cm 2 (ii) a Setting the rotating speed of the upper polishing head to be 35rpm/min; the rotating speed of the lower disc is set to be 40rpm/min; the temperature was set at 20 ℃ and the polishing time t was 90min, and polishing was carried out with 20% alumina polishing slurry, the removal being set at 7 μm. Taking out the polishing disk 2 after polishing, washing clean the test wafer 1 on the polishing disk 2, and measuring the test wafer1 whole disc thickness data and a single on-chip TV3, wherein the specific experimental results are given in table 1 below:
table 1: testing the whole thickness of the wafer 1 and the TV3 in the single chip
It should be noted that the first point, the second point, and the third point on the test wafer 1 correspond to the inner, middle, and outer points on the wafer 1, respectively, as can be seen from fig. 2, the first point, the second point, and the third point are located on a line segment where the diameter of the test wafer 1 is located, the second point is where the center of the circle of the test wafer is located, and the distances between two adjacent points are equal.
It can be known from table 1 that after the polishing of # 1 polishing head, the thickness data of the first point (in), the second point (in), and the third point (out) on all the test wafers are sequentially increased by measuring the thickness of the whole disk of the test wafer 1 and the TV3 in the single disk, that is to say, the thickness of the whole disk of the wafer 1 is the condition of being thick outside and thin inside, and then it can be determined that the central pressure of the polishing head is too large, the pressure around is too small, and the central pressure value of the polishing head is greater than the pressure values around the polishing head. The shape of the correction pad 4 can be determined to be annular according to the pressure distribution of the polishing head, as shown in fig. 3.
Next, as shown in fig. 4, the correction pad 4 determined as shown in fig. 3 is placed between the polishing head 3 and the polishing disk 2; polishing operation is carried out by adopting a conventional polishing process, and the process parameters are set as follows: polishing pressure is set to 350g/cm 2 (ii) a Setting the rotating speed of the upper polishing head to be 35rpm/min; setting the rotating speed of a lower disc to be 40rpm/min; the temperature was set at 20 ℃ and the polishing time t was 90min, and polishing was carried out with 20% alumina polishing solution, the removal being set at 7 μm.
Taking out the polishing disc 2 after polishing, washing the wafer to be processed on the polishing disc 2, measuring the whole thickness data of the wafer to be processed and the TV3 in the single chip, wherein the specific experimental results are shown in the following table 2:
table 2: full disc thickness of wafer after using annular correction shim plate and single in-chip TV3
As can be seen from Table 2, the thickness deviation of the whole wafer is obviously improved, and the thickness deviation of the single wafer is very small and is less than or equal to 3 μm, which shows that the pressure of the polishing head of the No. 1 polishing head after the polishing head is loaded on the backing plate is obviously improved, and the polishing thickness uniformity of the wafer is greatly improved.
Example 2
Assuming that the number of the polishing head of the machine is 2#, as shown in fig. 1-2, first, a polishing disk 2 to which 7 test wafers 1 are attached is loaded under the polishing head 3 to prepare for polishing work. Wherein, there is no correction backing plate 4 between the polishing head 3 and the polishing disk 2, the polishing operation is carried out by adopting the conventional polishing process, and the process parameters are set as follows: polishing pressure was set to 550g/cm 2 (ii) a Setting the rotating speed of the upper polishing head to be 35rpm/min; setting the rotating speed of a lower disc to be 40rpm/min; the temperature was set at 50 ℃ and the polishing time t was 60min, and polishing was carried out with 20% alumina polishing solution, the removal being set at 7 μm. Taking out the test wafer 1 on the polishing disc 2 washed clean polishing disc 2 after polishing, measuring the whole thickness data of the test wafer 1 and the TV3 in the single chip, wherein the specific experimental results are shown in the following table 3:
table 3: testing the whole thickness of the wafer 1 and the TV3 in the single chip
As can be seen from table 3, the thickness data of three points or at least 1 point on the test wafer 1 on one side is smaller than the thickness data of three points on the test wafer 1 on the other side, that is, the thickness of the whole disk of the test wafer 1 is thicker on one side and thinner on the other side (the first, second, third and fourth, sixty-seven and sixty-seven sheets are thicker), so that it can be determined that the pressure on one side of the polishing head is too large and the pressure on the other side is too small. In addition, because of uneven polishing head pressure, the TV3 fluctuation of a single chip is also large, and at this time, the shape of the correction backing plate 4 can be determined to be semicircular according to the pressure distribution of the polishing head, as shown in fig. 5 in particular.
Next, the determined correction pad 4 is placed between the polishing head 3 and the polishing disk 2; polishing operation is carried out by adopting a conventional polishing process, and the process parameters are set as follows: polishing pressure was set to 550g/cm 2 (ii) a Setting the rotating speed of the upper polishing head to be 35rpm/min; the rotating speed of the lower disc is set to be 40rpm/min; the temperature was set at 50 ℃ and the polishing time t was 60min, and polishing was carried out with 20% alumina polishing slurry, the removal being set at 7 μm. And taking out the polishing disc 2 after polishing, washing the wafer to be processed on the polishing disc 2, and measuring the whole thickness data of the wafer to be processed and the TV3 in the single chip, wherein the specific experimental results are shown in the following table 4:
table 4: wafer full-disk thickness using semicircular correction shim plate and single-chip TV3
As can be seen from Table 4, the thickness deviation of the whole wafer is obviously improved, and the thickness deviation of the single wafer is very small and is less than or equal to 3 μm, which shows that the pressure of the polishing head is obviously improved after the polishing head No. 2 is used for semicircular correction of the backing plate, and the polishing thickness uniformity of the wafer is greatly improved.
Example 3
Assuming that the number of the polishing head of the machine is 3#, as shown in fig. 1-2, first, a polishing disk 2 to which 7 test wafers 1 are attached is loaded under the polishing head 3 to prepare for polishing work. Wherein, there is no correction backing plate 4 between the polishing head 3 and the polishing disk 2, the polishing operation is carried out by adopting the conventional polishing process, and the process parameters are set as follows: polishing pressure was set at 500g/cm 2 (ii) a Setting the rotating speed of the upper polishing head to be 35rpm/min; setting the rotating speed of a lower disc to be 40rpm/min; the temperature was set at 30 ℃ and the polishing time t was 70min, and polishing was carried out with 20% alumina polishing slurry, the removal being set at 7 μm. Taking out the polishing disk 2 after polishing and washing the polishing disk2, measuring the whole-disc thickness data of the test wafer 1 and the TV3 in a single chip, wherein the specific experimental results are shown in table 5 below:
table 5: testing the whole thickness of the wafer 1 and the TV3 in the single chip
As can be seen from table 5, the thickness data of the third point (outer), the second point (middle), and the first point (inner) on all the test wafers are sequentially increased, that is, the thickness of the entire disk of the wafer is the condition of outer thickness and inner thickness, so that it can be determined that the center pressure of the polishing head is too small, the peripheral pressure of the polishing head is too large, and the center pressure value of the polishing head is smaller than the peripheral pressure value of the polishing head. The shape of the correction pad 4 can be determined to be circular according to the pressure distribution of the polishing head, as shown in fig. 6.
Next, the determined correction pad 4 is placed between the polishing head 3 and the polishing disk 2; polishing operation is carried out by adopting a conventional polishing process, and the process parameters are set as follows: polishing pressure was set at 500g/cm 2 (ii) a Setting the rotating speed of the upper polishing head to be 35rpm/min; setting the rotating speed of a lower disc to be 40rpm/min; the temperature was set at 30 ℃ and the polishing time t was 70min, and polishing was carried out with 20% alumina polishing slurry, the removal being set at 7 μm. And taking out the polishing disc 2 after polishing, washing the wafer to be processed on the polishing disc 2, and measuring the whole thickness data of the wafer to be processed and the TV3 in the single chip, wherein the specific experimental results are shown in the following table 6:
table 6: wafer full-disk thickness using semicircular correction shim plate and single-chip TV3
As can be seen from Table 6, the thickness deviation of the whole wafer is obviously improved, the thickness deviation of the single wafer is very small and is less than or equal to 3 μm, which shows that the pressure of the No. 3 polishing head on the polishing head is obviously improved after the polishing head is arranged on the cushion plate, and the polishing thickness uniformity of the wafer is greatly improved.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (4)
1. A method for improving wafer polishing thickness uniformity, comprising the steps of:
polishing a plurality of test wafers which are annularly arranged by using a polishing head to obtain polished test wafers;
obtaining thickness data of different positions of each test wafer after polishing;
determining pressure values of different positions of the polishing head according to the thickness data;
determining the shape of a correction base plate according to pressure values of different positions of the polishing head;
placing the determined correction backing plate between the polishing head and the polishing disk;
polishing the wafer to be processed on the polishing disc;
the polishing head is different from the first point, the second point and the third point on the test wafer;
the first point, the second point and the third point are positioned on the same line segment, and the line segment is superposed with the line segment where the diameter of the test wafer is positioned;
the first point is positioned at the inner side of a third point, the second point is positioned in the middle of the first point and the third point, and the second point is the position of the center of the circle of the test wafer;
if the thickness data of the first point, the second point and the third point on all the test wafers are sequentially increased, determining that the central pressure value of the polishing head is greater than the peripheral pressure value of the polishing head; determining that the correction base plate is annular according to the fact that the central pressure value of the polishing head is larger than the peripheral pressure values of the polishing head;
if the thickness data of the third point, the second point and the first point on all the test wafers are sequentially increased, determining that the central pressure value of the polishing head is smaller than the peripheral pressure value of the polishing head; determining that the shape of the correction backing plate is circular according to the fact that the central pressure value of the polishing head is smaller than the peripheral pressure values of the polishing head;
if the thickness data of all or at least part of the first point, the second point and the third point on the test wafer on one side are smaller than the thickness data of all the first point, the second point and the third point on the test wafer on the other side, determining that the pressure value on one side of the polishing head is larger than the pressure value on the other side; and determining that the shape of the correction backing plate is semicircular according to the condition that the pressure value of one side of the polishing head is greater than the pressure value of the other side of the polishing head.
2. The method of claim 1, wherein the distance between two adjacent points is equal.
3. The method for improving wafer polishing thickness uniformity of claim 2, wherein the test wafer or the wafer to be processed is selected from any one of a silicon wafer, a sapphire wafer, a silicon carbide wafer, gallium nitride, gallium arsenide; the material of the correction backing plate is polyurethane or cerium oxide.
4. A method for improving polishing thickness uniformity of a wafer according to any one of claims 1 to 3, wherein the step of performing a polishing process on the wafer to be processed on the polishing pad comprises: the polishing pressure is set to be 350 to 550g/cm 2 (ii) a Setting the rotating speed of the polishing head to be 35-40rpm; the rotation speed of the polishing disk is set to be 40-45rpm, the temperature is set to be 20-50 ℃, the polishing time is 60-90min, and the polishing is carried out by using 20-30% concentration alumina polishing solution, and the removal amount is set to be 7-10 mu m.
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| CN114227525A (en) * | 2021-12-24 | 2022-03-25 | 济南晶正电子科技有限公司 | Method for improving thickness uniformity of wafer by polishing |
| CN115319563B (en) * | 2022-08-30 | 2024-01-19 | 上海积塔半导体有限公司 | Fixing device and chip polishing method |
| CN115302400B (en) * | 2022-09-29 | 2023-03-10 | 中国电子科技集团公司第四十六研究所 | Method for determining removal amount of upper surface and lower surface of wafer in double-sided grinding |
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| US5975998A (en) * | 1997-09-26 | 1999-11-02 | Memc Electronic Materials , Inc. | Wafer processing apparatus |
| CN100433269C (en) * | 2000-05-12 | 2008-11-12 | 多平面技术公司 | Pneumatic diaphragm head having independent retaining ring and multi-region pressure control, and method to use the same |
| US6506105B1 (en) * | 2000-05-12 | 2003-01-14 | Multi-Planar Technologies, Inc. | System and method for pneumatic diaphragm CMP head having separate retaining ring and multi-region wafer pressure control |
| TWI280174B (en) * | 2004-07-14 | 2007-05-01 | Applied Materials Taiwan Ltd | Method for assembling a carrier head for chemical mechanical polishing |
| CN102328272B (en) * | 2011-09-23 | 2014-02-19 | 清华大学 | Chemically mechanical polishing method |
| CN107195547B (en) * | 2017-05-05 | 2019-12-20 | 清华大学 | Method for improving flatness of wafer surface on line |
| CN107052984A (en) * | 2017-06-14 | 2017-08-18 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Crystal round fringes site flatness optimization method in CMP process |
| CN107336126B (en) * | 2017-08-31 | 2019-05-28 | 清华大学 | Polish pressure control method, device and the polissoir of polissoir |
| CN210550375U (en) * | 2019-09-20 | 2020-05-19 | 江苏京晶光电科技有限公司 | Pressure dividing pad |
| CN110561201B (en) * | 2019-09-24 | 2020-12-29 | 华海清科股份有限公司 | Method for controlling polishing process and chemical mechanical polishing device |
| CN112405305A (en) * | 2020-11-20 | 2021-02-26 | 西安奕斯伟硅片技术有限公司 | Single-side polishing device and method |
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Address after: 321000 south side of Building 1, No. 2688, south 2nd Ring West Road, qiubin street, Wucheng District, Jinhua City, Zhejiang Province Applicant after: Jinhua Bolante New Material Co.,Ltd. Address before: 321000 south side of Building 1, No. 2688, south 2nd Ring West Road, qiubin street, Wucheng District, Jinhua City, Zhejiang Province Applicant before: Jinhua Bolante Electronic Materials Co.,Ltd. |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Method for improving the uniformity of wafer polishing thickness Effective date of registration: 20230619 Granted publication date: 20221021 Pledgee: Bank of Jinhua Limited by Share Ltd. science and Technology Branch Pledgor: Jinhua Bolante New Material Co.,Ltd. Registration number: Y2023980044592 |