TWI277127B - A magnetron sputtering device, a cylindrical cathode and a method of coating thin multicomponent films on a substrate - Google Patents

A magnetron sputtering device, a cylindrical cathode and a method of coating thin multicomponent films on a substrate Download PDF

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Publication number
TWI277127B
TWI277127B TW094117042A TW94117042A TWI277127B TW I277127 B TWI277127 B TW I277127B TW 094117042 A TW094117042 A TW 094117042A TW 94117042 A TW94117042 A TW 94117042A TW I277127 B TWI277127 B TW I277127B
Authority
TW
Taiwan
Prior art keywords
substrate
cylindrical cathode
cylindrical
cathode
magnetron
Prior art date
Application number
TW094117042A
Other languages
English (en)
Chinese (zh)
Other versions
TW200606995A (en
Inventor
Michael Dr Liehr
Original Assignee
Applied Materials Gmbh & Co Kg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Gmbh & Co Kg filed Critical Applied Materials Gmbh & Co Kg
Publication of TW200606995A publication Critical patent/TW200606995A/zh
Application granted granted Critical
Publication of TWI277127B publication Critical patent/TWI277127B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW094117042A 2004-08-10 2005-05-25 A magnetron sputtering device, a cylindrical cathode and a method of coating thin multicomponent films on a substrate TWI277127B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP04018926A EP1626433B1 (de) 2004-08-10 2004-08-10 Magnetronsputtereinrichtung, Zylinderkathode und Verfahren zur Aufbringung von dünnen Mehrkomponentenschichten auf einem Substrat

Publications (2)

Publication Number Publication Date
TW200606995A TW200606995A (en) 2006-02-16
TWI277127B true TWI277127B (en) 2007-03-21

Family

ID=34926114

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094117042A TWI277127B (en) 2004-08-10 2005-05-25 A magnetron sputtering device, a cylindrical cathode and a method of coating thin multicomponent films on a substrate

Country Status (11)

Country Link
US (1) US20060032737A1 (de)
EP (1) EP1626433B1 (de)
JP (1) JP2006052461A (de)
KR (1) KR100797447B1 (de)
CN (1) CN1733965A (de)
AT (1) ATE354863T1 (de)
DE (1) DE502004002964D1 (de)
ES (1) ES2282769T3 (de)
PL (1) PL1626433T3 (de)
PT (1) PT1626433E (de)
TW (1) TWI277127B (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI391514B (zh) * 2009-07-16 2013-04-01 Univ Nat Sun Yat Sen 磁控濺鍍機
TWI391508B (zh) * 2007-03-30 2013-04-01 Univ Tohoku Nat Univ Corp 迴轉式磁控濺鍍裝置

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1698715A1 (de) * 2005-03-03 2006-09-06 Applied Films GmbH & Co. KG Anlage zum Beschichten eines Substrats und Einschubelement
US20070235427A1 (en) * 2006-04-04 2007-10-11 Sakhrani Vinay G Apparatus and method for treating a workpiece with ionizing gas plasma
EP1923902B2 (de) † 2006-11-14 2014-07-23 Applied Materials, Inc. Magnetron-Sputterquelle, Sputter-Beschichtungsanlage und Verfahren zur Beschichtung eines Substrats
US20080145688A1 (en) 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
US20080213071A1 (en) * 2007-02-09 2008-09-04 Applied Materials, Inc. Transport device in an installation for the treatment of substrates
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
GB2461094B (en) * 2008-06-20 2012-08-22 Mantis Deposition Ltd Deposition of materials
US9412568B2 (en) 2011-09-29 2016-08-09 H.C. Starck, Inc. Large-area sputtering targets
US20140110246A1 (en) * 2012-10-18 2014-04-24 Primestar Solar, Inc. Methods for depositing a homogeneous film via sputtering from an inhomogeneous target
US20140110255A1 (en) * 2012-10-18 2014-04-24 Primestar Solar, Inc. Cylindrical target having an inhomogeneous sputtering surface for depositing a homogeneous film
CN102888590A (zh) * 2012-10-23 2013-01-23 东莞宏威数码机械有限公司 扫描式磁控溅射阴极及扫描式磁控溅射装置
CN103938173A (zh) * 2014-04-30 2014-07-23 浙江东晶电子股份有限公司 一种共溅射旋转靶材及其制备方法
CN106756841B (zh) * 2016-12-09 2018-10-09 广东工业大学 一种刀具复合涂层的制备方法
WO2018128634A1 (en) * 2017-01-09 2018-07-12 Applied Materials, Inc. Method, apparatus, and target for material deposition on a substrate in a vacuum deposition process
CN115181939B (zh) * 2022-09-13 2022-12-27 苏州博志金钻科技有限责任公司 旋转式柱靶分层溅射制备纳米多层薄膜及合金薄膜的方法
CN116497324A (zh) * 2023-06-09 2023-07-28 深圳市汉嵙新材料技术有限公司 复合钙钛矿靶材及其制备方法、钙钛矿太阳电池的制备方法

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
US4356073A (en) * 1981-02-12 1982-10-26 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
DD217964A3 (de) * 1981-10-02 1985-01-23 Ardenne Manfred Einrichtung zum hochratezerstaeuben nach dem plasmatronprinzip
US5180434A (en) * 1991-03-11 1993-01-19 United Solar Systems Corporation Interfacial plasma bars for photovoltaic deposition apparatus
JPH04356073A (ja) * 1991-07-01 1992-12-09 Matsushita Graphic Commun Syst Inc カラー画像記録装置
EP1251547A1 (de) * 1993-01-15 2002-10-23 The Boc Group, Inc. Abschirmungsstruktur für zylindrischen Magnetron
US5466355A (en) * 1993-07-15 1995-11-14 Japan Energy Corporation Mosaic target
US5507931A (en) * 1993-12-30 1996-04-16 Deposition Technologies, Inc. Sputter deposition process
FR2725073B1 (fr) * 1994-09-22 1996-12-20 Saint Gobain Vitrage Cathode rotative de pulverisation cathodique a plusieurs cibles
US6878242B2 (en) * 2003-04-08 2005-04-12 Guardian Industries Corp. Segmented sputtering target and method/apparatus for using same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI391508B (zh) * 2007-03-30 2013-04-01 Univ Tohoku Nat Univ Corp 迴轉式磁控濺鍍裝置
TWI391514B (zh) * 2009-07-16 2013-04-01 Univ Nat Sun Yat Sen 磁控濺鍍機

Also Published As

Publication number Publication date
ATE354863T1 (de) 2007-03-15
EP1626433A9 (de) 2006-04-26
CN1733965A (zh) 2006-02-15
US20060032737A1 (en) 2006-02-16
DE502004002964D1 (de) 2007-04-05
JP2006052461A (ja) 2006-02-23
KR100797447B1 (ko) 2008-01-24
EP1626433A1 (de) 2006-02-15
PL1626433T3 (pl) 2007-06-29
ES2282769T3 (es) 2007-10-16
TW200606995A (en) 2006-02-16
PT1626433E (pt) 2007-05-31
EP1626433B1 (de) 2007-02-21
KR20060049649A (ko) 2006-05-19

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