TWI276161B - Ideal oxygen precipitating silicon wafers with nitrogen/carbon stabilized oxygen precipitate nucleation centers and process for making the same - Google Patents

Ideal oxygen precipitating silicon wafers with nitrogen/carbon stabilized oxygen precipitate nucleation centers and process for making the same Download PDF

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Publication number
TWI276161B
TWI276161B TW091137013A TW91137013A TWI276161B TW I276161 B TWI276161 B TW I276161B TW 091137013 A TW091137013 A TW 091137013A TW 91137013 A TW91137013 A TW 91137013A TW I276161 B TWI276161 B TW I276161B
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TW
Taiwan
Prior art keywords
wafer
oxygen
layer
nitrogen
concentration
Prior art date
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TW091137013A
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English (en)
Chinese (zh)
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TW200305932A (en
Inventor
Mule Stagno Luciano
Jeffrey L Libbert
Richard J Phillips
Milind Kulkarni
Mohsen Banan
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Memc Electronic Materials
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Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials
Publication of TW200305932A publication Critical patent/TW200305932A/zh
Application granted granted Critical
Publication of TWI276161B publication Critical patent/TWI276161B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H10P36/07—Gettering within semiconductor bodies within silicon bodies of silicon-on-insulator structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/20—Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body

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  • Crystals, And After-Treatments Of Crystals (AREA)
TW091137013A 2001-12-21 2002-12-23 Ideal oxygen precipitating silicon wafers with nitrogen/carbon stabilized oxygen precipitate nucleation centers and process for making the same TWI276161B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US34517801P 2001-12-21 2001-12-21

Publications (2)

Publication Number Publication Date
TW200305932A TW200305932A (en) 2003-11-01
TWI276161B true TWI276161B (en) 2007-03-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW091137013A TWI276161B (en) 2001-12-21 2002-12-23 Ideal oxygen precipitating silicon wafers with nitrogen/carbon stabilized oxygen precipitate nucleation centers and process for making the same

Country Status (6)

Country Link
EP (1) EP1456875A2 (cg-RX-API-DMAC10.html)
JP (2) JP2005515633A (cg-RX-API-DMAC10.html)
KR (3) KR100745308B1 (cg-RX-API-DMAC10.html)
CN (1) CN100345263C (cg-RX-API-DMAC10.html)
TW (1) TWI276161B (cg-RX-API-DMAC10.html)
WO (1) WO2003060982A2 (cg-RX-API-DMAC10.html)

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EP1677344B1 (en) * 2003-10-21 2013-11-06 SUMCO Corporation Process for producing high resistivity silicon wafer, and process for producing epitaxial wafer and soi wafer
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
JP2008016652A (ja) * 2006-07-06 2008-01-24 Shin Etsu Handotai Co Ltd シリコンウェーハの製造方法
US8029620B2 (en) * 2006-07-31 2011-10-04 Applied Materials, Inc. Methods of forming carbon-containing silicon epitaxial layers
FR2928775B1 (fr) * 2008-03-11 2011-12-09 Soitec Silicon On Insulator Procede de fabrication d'un substrat de type semiconducteur sur isolant
JP5332502B2 (ja) * 2008-10-27 2013-11-06 セイコーエプソン株式会社 発振回路及び半導体装置
US8357939B2 (en) * 2009-12-29 2013-01-22 Siltronic Ag Silicon wafer and production method therefor
KR101395359B1 (ko) * 2012-02-27 2014-05-14 주식회사 엘지실트론 단결정 실리콘 잉곳인상방법, 및 그 방법을 위한 시드
JP5793456B2 (ja) 2012-03-23 2015-10-14 株式会社東芝 半導体装置およびその製造方法、基板
CN105316767B (zh) * 2015-06-04 2019-09-24 上海超硅半导体有限公司 超大规模集成电路用硅片及其制造方法、应用
CN106884203A (zh) * 2015-12-15 2017-06-23 上海新昇半导体科技有限公司 单晶硅锭及晶圆的形成方法
CN107151818A (zh) * 2016-03-03 2017-09-12 上海新昇半导体科技有限公司 单晶硅的生长方法及其制备的单晶硅锭
CN107151817A (zh) * 2016-03-03 2017-09-12 上海新昇半导体科技有限公司 单晶硅的生长方法及其制备的单晶硅锭
JP6484762B2 (ja) 2016-07-06 2019-03-13 株式会社トクヤマ 単結晶シリコン板状体およびその製造方法
CN107604429A (zh) * 2016-07-12 2018-01-19 上海新昇半导体科技有限公司 直拉生长单晶硅的方法
CN108660509A (zh) * 2017-03-27 2018-10-16 上海新昇半导体科技有限公司 一种直拉单晶硅方法
US11932535B2 (en) 2018-03-28 2024-03-19 Sumitomo Precision Products Co., Ltd. MEMS device manufacturing method, MEMS device, and shutter apparatus using the same
US10943813B2 (en) * 2018-07-13 2021-03-09 Globalwafers Co., Ltd. Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
JP7207204B2 (ja) * 2019-07-02 2023-01-18 信越半導体株式会社 炭素ドープシリコン単結晶ウェーハの製造方法

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US5024723A (en) 1990-05-07 1991-06-18 Goesele Ulrich M Method of producing a thin silicon on insulator layer by wafer bonding and chemical thinning
US5593494A (en) * 1995-03-14 1997-01-14 Memc Electronic Materials, Inc. Precision controlled precipitation of oxygen in silicon
JPH08290995A (ja) * 1995-04-19 1996-11-05 Sumitomo Metal Ind Ltd シリコン単結晶及びその製造方法
JPH0964319A (ja) * 1995-08-28 1997-03-07 Toshiba Corp Ｓｏｉ基板およびその製造方法
JPH10150048A (ja) * 1996-11-15 1998-06-02 Sumitomo Sitix Corp 半導体基板
GB9700566D0 (en) * 1997-01-13 1997-03-05 Avx Ltd Binder removal
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JP3449729B2 (ja) * 1997-04-09 2003-09-22 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 単結晶シリコンウエハを製造する方法
JP3614019B2 (ja) * 1998-03-09 2005-01-26 信越半導体株式会社 シリコン単結晶ウエーハの製造方法およびシリコン単結晶ウエーハ
TW589415B (en) * 1998-03-09 2004-06-01 Shinetsu Handotai Kk Method for producing silicon single crystal wafer and silicon single crystal wafer
KR100816696B1 (ko) * 1998-09-02 2008-03-27 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 개선된 내부 게터링을 갖는 열어닐된 웨이퍼
CN1155074C (zh) * 1998-09-02 2004-06-23 Memc电子材料有限公司 从低缺陷密度的单晶硅上制备硅-绝缘体结构
US6284384B1 (en) * 1998-12-09 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafer with intrinsic gettering
DE19925044B4 (de) * 1999-05-28 2005-07-21 Siltronic Ag Halbleiterscheibe mit Kristallgitter-Defekten und Verfahren zur Herstellung derselben
WO2001055485A1 (en) * 2000-01-25 2001-08-02 Shin-Etsu Handotai Co., Ltd. Silicon wafer, method for determining condition under which silicon single crystal is produced, and method for producing silicon wafer
JP2001308101A (ja) * 2000-04-19 2001-11-02 Mitsubishi Materials Silicon Corp シリコンウェーハの熱処理方法及びシリコンウェーハ
DE10024710A1 (de) * 2000-05-18 2001-12-20 Steag Rtp Systems Gmbh Einstellung von Defektprofilen in Kristallen oder kristallähnlichen Strukturen
JP2002176058A (ja) * 2000-12-11 2002-06-21 Sumitomo Metal Ind Ltd シリコン半導体基板の製造方法

Also Published As

Publication number Publication date
KR20070039175A (ko) 2007-04-11
WO2003060982A3 (en) 2004-03-11
CN1606799A (zh) 2005-04-13
JP2005515633A (ja) 2005-05-26
TW200305932A (en) 2003-11-01
KR100973393B1 (ko) 2010-07-30
KR100745308B1 (ko) 2007-08-01
JP2010161393A (ja) 2010-07-22
EP1456875A2 (en) 2004-09-15
WO2003060982A2 (en) 2003-07-24
CN100345263C (zh) 2007-10-24
KR100920862B1 (ko) 2009-10-09
KR20040076872A (ko) 2004-09-03
KR20090092844A (ko) 2009-09-01

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