1270990 A7 B7 五、發明説明（） 發明領域： 本發明係有關於一種發光二極體（Light Emitting Diode ; LED)之結構與製造方法，特別是有關於一種p電極 與N電極錯綜交錯之發光二極體之結構與製造方法。 發明背景·· 近年來，許多的焦點集中在以氮化鎵為主（Gamum Nitride-based)的半導體所形成的發光元件，例如氮化鎵 (GaN)、氮化鋁鎵（AiGaN)、氮化銦鎵（InGaN)、以及氮化鋁 銦鎵（AlInGaN)等。此類的發光元件半導體大多成長於不導 電之藍寶石（Sapphire)基板上，而與其他發光元件採用可導 電的基板不同。由於藍寶石基板為一絕緣體，因此不能直接 製作電極於基板上，故電極的製作必須直接與p型的半導體 層以及N型的半導體層做各別地接觸，才能完成此類發光元 件的製作。 請參照第1圖與第2圖，其所繪示為習知以氮化鎵為主 的半導體所形成的發光二極體之上視圖以及沿著a-a，剖面 所形成的剖面圖。根據圖示，在藍寶石基板1 〇之表面上依 序形成N型氮化鎵層20、主動層^Active Layer)40、P型氮 化鎵層60、以及透明接觸層80的堆疊狀結構。上述主動層 40之材質為具有雙異質接面或者位能井結構的氮化鋁鎵、 氮化銦鎵、氮化鋁鎵銦、或氮化鎵。接著，進行一蝕刻製程， 以暴露出部分區域的N型氮化鎵層20。然後，分別在N型 氮化鎵層20以及透明接觸層80之表面上形成N電極70與 2 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁) 、訂· 經濟部智慧財產局員工消費合作社印製 1270990 A7 B7 五、發明説明（） P電極90。 (請先閲讀背面之注意事項再填寫本頁} 上述第1圖與第2圖中所示係習知以氮化鎵為主的半導 體所形成的發光二極體，且屬於小晶片尺寸（SmaU chip Size)。此種小晶片尺寸之發光二極體之實際尺寸一般為 l〇milxi〇mil之正方形，亦可為8milx8mil之正方形。當發 光二極體的尺寸比lOmilxlOmil大時，例如2〇muX2〇mil(即 面積為40Omil2)，則此種發光二極體即屬於大晶片尺寸。 t 經濟部智慧財產局員工消費合作社印製 習知大晶片尺寸之發光二極體的P電極與N電極之尺寸 並非隨著晶片尺寸的放大而放大。其原因在於P電極與N 電極具有遮光的本質，因此P電極與N電極之尺寸若隨著晶 片尺寸的放大而放大’則整個大晶片尺寸之發光二極體的發 光效率會隨之降低。故習知大晶片尺寸之發光二極體的p電 極與N電極之設計有其另一套做法。請參考第3圖所緣示之 習知大晶片尺寸之發光二極體的上視圖。由於第3圖為上視 圖，因此從第3圖中僅能看出習知大晶片尺寸之發光二極體 之部份元件，包括N型氮化鎵層1 2 0、N電極1 7 0、透明接 觸層180、以及P電極190等，其中N電極170位於部分之 N型氮化鎵層120上，且透明接觸丨層180位於另一部分 型氮化鎵層120上，而P電極190則位於透明接觸層180上。 此外，第3圖中更具有N銲墊175與P銲墊195，藉以做為 發光二極體進一步拉線至外部之接點。 由第3圖可知，習知大晶片尺寸之發光二極體之特色在 於具有多條之N電極170與P電極190，且任意兩條之N電 3 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) 1270990 A7 B7 五、發明説明（） (請先閲讀背面之注意事項再填寫本頁) 極1 70與P電極丨90並不相交。此種做法除可避免因總電極 面積過大而嚴重遮光外，更可提高電流分佈的均勻性。然 而，此種設計雖有其優點，但由於尺寸固定，因此並無依實 際需求而任意變更之可能性。 發明目的及概述： 雲於上述發明背景中，習知大晶片尺寸之發光二極體 之設計仍具有改進空間。因此本發明之一目的為提供一種 發光二極體之結構與製造方法，係以各單元發光區來設 計’可藉以提高各單元發光區發光之均勻性，且可藉以降 低元件之操作電壓。 本發明之另一目的為提供一種發光二極體之結構與製 造方法。運用本發明之結構與製造方法，使得整片晶圓上 的N電極與P電極均各別串聯，因此可任意以單元發光區 之尺寸放大切割之元件尺寸。 本發明之再一目的為提供一種發光二極體之結構與製 造方法’可藉以提高大晶片尺寸之發光二極體之光取出 率〇 經濟部智慧財產局員工消費合作社印製 依據本發明之上述目的，因岣本發明提供一種發光二 極體之結構，至少包括：基板；半導體磊晶結構，至少包 括N型半導體層、主動層、以及p型半導體層，其中^^型 半導體層覆蓋基板，N型半導體層之部分表面上形成有複 數個突起物，且每兩個相鄰之突起物之間具有通道，而主 動層以及P型半導體層係依序堆疊於突起物上；N型電極 4 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) 1270990 Α7 五、發明説明（ 曰“附著於N型半導體層上且位於通道中；以及複數個f 型電極’位於P型半導體層上。此外，本發明之發光二極 {請先閱讀背面之泌意事項再4寫本I) 體之結構更包括透明接觸層，位☆ P型半導體層與P型電 ° 再者本發明之發光二極體之結構更包括絕緣層， 覆蓋透明接觸層與Ν型電極層，且暴露出部分之Ν型電極 層，以做為Ν型銲塾之用；以及導電層，覆蓋絕緣層並連 接Ρ型電極中ρ型電極中之至少一個ρ型電極係做為 Ρ型銲墊之用。 經濟部智惡財產局員工消費合作社印製 •依據本發明之上述目的，因此本發明另提供一種發光 二極體之製造方法，至少包括下列步驟··首先，提供基板； 接著’形成Ν型半導體層覆蓋基板，其中Ν型半導體層之 部分表面上形成有複數個突起物，而每兩個相鄰之突起物 之間具有通道；接著，形成主動層覆蓋上述突起物；接著， 形成Ρ型半導體層覆蓋主動層；接著，形成透明接觸層覆 蓋Ρ型半導體層；接著，形成Ν型電極層附著於Ν型半導 體層上且位於通道中；接著，形成複數個ρ型電極附著於 透明接觸層之表面之一部分；接著，形成絕緣層覆蓋透明 接觸層與Ν型電極層，且暴露出_分之ν型電極層，以做 為Ν型銲墊之用；然後，形成導電層覆蓋絕緣層並連接上 述Ρ型電極’其中上述ρ型電極中之至少一 Ρ型電極係做 為Ρ型銲墊之用。 圖式簡單說明： 本發明的較佳實施例將於往後之說明文字中輔以下列 本紙張尺度適用中國國家標準(CNS)A4規格(2丨0Χ 297公釐) 1270990 A7 B7 五、發明説明（） 經濟部智慧財產局員工消費合作社印製 圖示 做更詳細的闡述， 其中： 第1圖係繪示習知以氮化鎵為主的半導體所形成的發 光二 .極體之上視圖； 第2圖係繪示第 1圖中沿 著 a-a’剖面所形成的剖面 圖； 第3圖係繪示習 知大晶片 尺寸之發光二極體的上視 圖， 第4圖係繪示本發明之一較佳實施例之大晶片尺寸之 發光二極體的上:視圖； 以及 第5圖係繪示第 4圖中沿 著 b-b’剖面所形成的剖面 圖。 圖號對照說明： 10 藍寶石基板 20 N型氮化鎵層 40 主動層 60 P型氮化鎵層 70 N電極 80 透明接觸層 90 P電極 120 N型氮化鎵層 1 70 N電極 175 N銲墊 180 透明接觸層 190 Θ電極 195 P銲墊 200 單元發光區 210 基板 220 N型半導體層 240 主動層 260 P型半導體層 270 N型電極層 275 N型銲墊 280 透明接觸層 290 P型電極 6 (請先閲背面之注意事項再填寫本¥c}1270990 A7 B7 V. INSTRUCTION DESCRIPTION () Field of the Invention: The present invention relates to a structure and a manufacturing method of a light emitting diode (LED), and more particularly to a light-emitting diode in which a p-electrode and an N-electrode are intricately interlaced. The structure and manufacturing method of the polar body. BACKGROUND OF THE INVENTION In recent years, many of the focus has been on light-emitting elements formed of a GaN-based semiconductor such as gallium nitride (GaN), aluminum gallium nitride (AiGaN), and nitridation. Indium gallium (InGaN), aluminum indium gallium nitride (AlInGaN), and the like. Most of such light-emitting element semiconductors are grown on a non-conductive Sapphire substrate, and are different from other light-emitting elements in that they can be electrically conductive. Since the sapphire substrate is an insulator, the electrode cannot be directly fabricated on the substrate. Therefore, the electrode must be directly contacted with the p-type semiconductor layer and the N-type semiconductor layer to complete the fabrication of such a light-emitting element. Referring to Figures 1 and 2, there is shown a top view of a light-emitting diode formed by a conventional gallium nitride-based semiconductor and a cross-sectional view taken along a-a. According to the illustration, a stacked structure of an N-type gallium nitride layer 20, an active layer 40, a P-type gallium nitride layer 60, and a transparent contact layer 80 is sequentially formed on the surface of the sapphire substrate 1 . The active layer 40 is made of aluminum gallium nitride, indium gallium nitride, aluminum gallium indium nitride, or gallium nitride having a double heterojunction or a potential well structure. Next, an etching process is performed to expose the N-type gallium nitride layer 20 in a portion of the region. Then, N electrodes 70 and 2 are formed on the surfaces of the N-type gallium nitride layer 20 and the transparent contact layer 80, respectively. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210×297 mm) (please read the back note first) Fill in this page again, order · Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 1270990 A7 B7 V, invention description () P electrode 90. (Please read the precautions on the back and fill out this page.) The above-mentioned figures 1 and 2 show the light-emitting diodes formed by GaN-based semiconductors and are small wafer sizes (SmaU). Chip Size). The actual size of the light-emitting diode of such a small chip size is generally a square of l〇milxi〇mil, or a square of 8milx8mil. When the size of the light-emitting diode is larger than lOmilxlOmil, for example, 2〇muX2 〇mil (that is, the area is 40Omil2), this kind of light-emitting diode is a large wafer size. t Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative prints the P-electrode and N-electrode of the light-emitting diode of the conventional large-chip size. The size is not amplified as the size of the wafer is enlarged. The reason is that the P electrode and the N electrode have the nature of light shielding, so the size of the P electrode and the N electrode are amplified as the size of the wafer is enlarged, then the entire large wafer size is illuminated. The luminous efficiency of the polar body is also reduced. Therefore, the design of the p-electrode and the N-electrode of the light-emitting diode of the conventional large-chip size has another set of practices. Please refer to the conventional large wafer size as shown in FIG. It The upper view of the photodiode. Since Fig. 3 is a top view, only some of the components of the conventional large-diameter light-emitting diode can be seen from Fig. 3, including the N-type gallium nitride layer 1 2 0 , the N electrode 170, the transparent contact layer 180, and the P electrode 190, etc., wherein the N electrode 170 is located on a portion of the N-type gallium nitride layer 120, and the transparent contact layer 180 is located on the other portion of the gallium nitride layer 120. The P electrode 190 is located on the transparent contact layer 180. In addition, in FIG. 3, the N pad 175 and the P pad 195 are further provided, so as to further pull the light emitting diode to the external contact. It can be seen that the conventional large-wafer size LED has a plurality of N electrodes 170 and P electrodes 190, and any two of the N 3 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (210X). 297 mm) 1270990 A7 B7 V. Inventive Note () (Please read the note on the back and then fill out this page) Pole 1 70 does not intersect P electrode 丨 90. This method can avoid the total electrode area being too large. In addition to severe shading, the uniformity of current distribution can be improved. However, this design has Advantages, but because of the fixed size, there is no possibility of arbitrarily changing according to actual needs. OBJECTS AND SUMMARY: In the above-mentioned background of the invention, the design of a conventional large-wafer size LED still has room for improvement. An object of the present invention is to provide a structure and a manufacturing method of a light-emitting diode, which are designed by using the light-emitting areas of each unit to improve the uniformity of light emission of each unit light-emitting area, and thereby reduce the operating voltage of the element. Another object of the invention is to provide a structure and a manufacturing method of a light-emitting diode. By using the structure and the manufacturing method of the invention, the N electrode and the P electrode on the whole wafer are respectively connected in series, so that the unit light-emitting area can be arbitrarily The size enlarges the size of the cut component. A further object of the present invention is to provide a structure and a manufacturing method of a light-emitting diode, which can improve the light extraction rate of a light-emitting diode of a large wafer size. The Ministry of Economic Affairs, the Intellectual Property Office, the employee consumption cooperative, printed according to the present invention. The present invention provides a structure of a light emitting diode, comprising at least: a substrate; a semiconductor epitaxial structure comprising at least an N-type semiconductor layer, an active layer, and a p-type semiconductor layer, wherein the semiconductor layer covers the substrate, a plurality of protrusions are formed on a part of the surface of the N-type semiconductor layer, and a channel is formed between each two adjacent protrusions, and the active layer and the P-type semiconductor layer are sequentially stacked on the protrusions; the N-type electrode 4 This paper scale applies to China National Standard (CNS) A4 specification (210X 297 mm) 1270990 Α7 5. Inventive Note (曰 “attached to the N-type semiconductor layer and located in the channel; and a plurality of f-type electrodes” are located in the P-type semiconductor In addition, the light-emitting diode of the present invention {please read the back side of the matter of the first thing and then write the book I). The structure of the body further includes a transparent contact layer, bit ☆ P-type semiconductor Further, the structure of the light-emitting diode of the present invention further includes an insulating layer covering the transparent contact layer and the Ν-type electrode layer, and exposing a part of the Ν-type electrode layer for use as a 塾-type solder paste And a conductive layer covering the insulating layer and connecting at least one p-type electrode of the p-type electrode in the Ρ-type electrode as a Ρ-type pad. Printed by the Ministry of Economic Affairs, Intellectual Property Bureau, Employees' Consumption Cooperative, according to the present invention. In view of the above, the present invention further provides a method for fabricating a light-emitting diode, comprising at least the following steps: first, providing a substrate; then forming a germanium-type semiconductor layer covering substrate, wherein a plurality of surfaces of the germanium-type semiconductor layer are formed with a plurality of surfaces a protrusion with a channel between each two adjacent protrusions; then, an active layer is formed to cover the protrusion; then, a germanium-type semiconductor layer is formed to cover the active layer; then, a transparent contact layer is formed to cover the germanium-type semiconductor layer And forming a Ν-type electrode layer attached to the Ν-type semiconductor layer and located in the channel; then, forming a plurality of p-type electrodes attached to the surface of the transparent contact layer a portion; then, forming an insulating layer covering the transparent contact layer and the Ν-type electrode layer, and exposing a ν-type electrode layer for use as a 焊-type pad; and then forming a conductive layer covering the insulating layer and connecting the Ρ The electrode 'where at least one of the above-mentioned p-type electrodes is used as a 焊-type pad. BRIEF DESCRIPTION OF THE DRAWINGS: The preferred embodiment of the present invention will be supplemented by the following paper in the following description The scale applies to China National Standard (CNS) A4 specification (2丨0Χ 297 mm) 1270990 A7 B7 V. Invention Description () The Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative prints a more detailed explanation, including: Figure 1 The figure shows a top view of a light-emitting diode formed by a conventional GaN-based semiconductor; the second figure shows a cross-sectional view taken along the a-a' cross-section in FIG. 1; The figure is a top view of a light-emitting diode of a conventional large wafer size, and FIG. 4 is a top view of a large-size light-emitting diode of a preferred embodiment of the present invention; and FIG. The picture shows the edge in Figure 4 b-b 'sectional view taken formed. Figure number comparison description: 10 sapphire substrate 20 N-type gallium nitride layer 40 active layer 60 P-type gallium nitride layer 70 N electrode 80 transparent contact layer 90 P electrode 120 N-type gallium nitride layer 1 70 N electrode 175 N pad 180 transparent contact layer 190 Θ electrode 195 P pad 200 unit illuminating region 210 substrate 220 N-type semiconductor layer 240 active layer 260 P-type semiconductor layer 270 N-type electrode layer 275 N-type pad 280 transparent contact layer 290 P-type electrode 6 ( Please read the notes on the back before filling out this ¥c}
本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 1270990 A7 B7 五、發明説明（） 295P型銲墊 300導電層 310突起物 320通道 ::」…：·…参： (請先閱讀背面之;±意事項再填寫本頁) 3 3 0絕緣層 發明詳細說明： 本發明之發光二極體之結構與製造方法係適用於面積 大於lOOmil2且具有不導電基板之發光二極體，且其特徵在 於P電極與N電極錯綜交錯。請參考第4圖所繪示之本發 明之一較佳實施例之大晶片尺寸之發光二極體的上視圖。 本發明之單一大晶片尺寸之發光二極體即為第4圖中的單 元發光區200。此本發明之一較佳實施例之單元發光區200 之尺寸約為40milx40mil，即邊長40mil為習知小晶片尺寸 之發光二極體之邊長1 Omil的4倍，而面積則為習知小晶 片尺寸之發光二極體之面積10〇mil2的16倍。然本發明並 不限於此。事實上，只要單元發光區200的面積大於 1 0Omil2，且若以習知做法設計電極，需如第3圖所示增加 多條P/N電極，則皆為本發明所適用之情況。故，第4圖 中的單元發光區200之尺寸不一定需為40milx40mil，例如 亦可為 10milx20mil、10milx40mi丨、或 20milx20mil 等。 經濟部智慧財產局員工消費合作社印製 由於第4圖為上視圖，因此從第4圖中僅能看出本發 明之單元發光區200中的部份元件，包括N型半導體層 220、N型電極層270、透明接觸層280、複數個P型電極 290、以及導電層300等。另外，為了能在第4圖中清楚看 出N型半導體層220、N型電極層270、以及透明接觸層 7 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) 經濟部智慧財產局員工消費合作社印製 1270990 A7 五、發明説明（ 2 8Ό等原本埋藏在絕綾展 緣層下的7L件，因此第4圖中已省略 絕緣層之繪製。有關紹# a t ^ 、、、邑緣層與其它元件之位置關係，請參 考稍後將詳細說明之第$圖。 ；第圖中的N型電極層2 7 0係位於部分之N型 半導収層220上，且透明接觸層28〇位於另一部分之n型 半導體層220上，而複數個p型電極29〇則位於透明接觸 層2 80上另外，導電層3〇〇係用以連接原本各自分離之 複數個P5L電極290。再者，第4圖中更具有n型銲墊275 與P·5L鲜墊 295’/刀別連接至N型電極層27o與導電層3oo, 藉以做為單元發光區200進一步拉線至外部之接點。 為了更清楚說明單元發光區200中各元件之連接關 係’請參考第5圖所繪示之第4圖中沿$ b_b，剖面所形成 的剖面圖。第5圖中的單元發光區2〇〇包括基板21〇、]；型 半導體層220、主動層240、p型半導體層26〇、N型電極This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm) 1270990 A7 B7 V. Invention Description () 295P type solder pad 300 conductive layer 310 protrusion 320 channel::"...:·... Reference: (Please first Read the back; ±Import and fill in this page) 3 3 0 Insulation Layer Description: The structure and manufacturing method of the light-emitting diode of the present invention is applicable to a light-emitting diode having an area of more than 100 mil 2 and having a non-conductive substrate. And characterized in that the P electrode and the N electrode are intricately interlaced. Referring to Figure 4, a top view of a large wafer size LED of a preferred embodiment of the present invention is shown. The single large wafer size light emitting diode of the present invention is the unit light emitting region 200 in Fig. 4. The unit light-emitting region 200 of the preferred embodiment of the present invention has a size of about 40 mil x 40 mils, that is, a side length of 40 mils is 4 times the length of a light-emitting diode of a conventional small-chip size of 1 Omil, and the area is conventional. The area of the light-emitting diode of the small wafer size is 16 times that of 10 〇 mil2. However, the present invention is not limited thereto. In fact, as long as the area of the unit light-emitting area 200 is larger than 100 mil2, and if the electrode is designed by a conventional method, it is necessary to add a plurality of P/N electrodes as shown in Fig. 3, which are applicable to the present invention. Therefore, the size of the unit illumination area 200 in Fig. 4 does not have to be 40 mil x 40 mil, and may be, for example, 10 mil x 20 mil, 10 mil x 40 mi 丨, or 20 mil x 20 mil. Printed by the Intellectual Property Office of the Ministry of Economic Affairs, the consumer cooperatives. Since Figure 4 is a top view, only some of the elements in the unit light-emitting area 200 of the present invention can be seen from Figure 4, including the N-type semiconductor layer 220 and the N-type. The electrode layer 270, the transparent contact layer 280, the plurality of P-type electrodes 290, the conductive layer 300, and the like. In addition, in order to clearly see in Fig. 4, the N-type semiconductor layer 220, the N-type electrode layer 270, and the transparent contact layer 7 are applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) of the Ministry of Economics. Property Bureau employee consumption cooperative printed 1270990 A7 V. Invention description (2 8Ό, etc. 7L pieces originally buried under the edge of the exhibition, so the drawing of the insulating layer has been omitted in Figure 4. About ## ^ ^, For the positional relationship between the edge layer and other components, please refer to the figure $ which will be described in detail later. The N-type electrode layer 270 in the figure is located on a portion of the N-type semi-conducting layer 220, and is in transparent contact. The layer 28 is located on the other portion of the n-type semiconductor layer 220, and the plurality of p-type electrodes 29 are located on the transparent contact layer 280. In addition, the conductive layer 3 is used to connect the plurality of P5L electrodes 290 which are originally separated. Furthermore, in FIG. 4, the n-type pad 275 and the P·5L fresh pad 295'/knife are further connected to the N-type electrode layer 27o and the conductive layer 3oo, thereby further pulling the wire as the unit light-emitting region 200 to the outside. The contact point. In order to more clearly explain the components in the unit illumination area 200 Connection relationship 'Please refer to the sectional view formed along the cross section of $ b_b in Fig. 5, which is shown in Fig. 5. The unit light-emitting region 2A in Fig. 5 includes a substrate 21,]; a semiconductor layer 220, Active layer 240, p-type semiconductor layer 26, N-type electrode
層270 N型一塾275、透明接觸層280、P型電極290、P 型銲墊295、絕緣層3 30、以及導電層3〇〇等元件。由第5 圖中可看出，N型半導體層22〇係覆蓋基板21〇，其中N 型半導體層220之部分表面上形本複數個突起物310，其 中突起物310之形狀例如可為長方體。而這些突起物31〇 之間更具有通道3 2 0。上述基板2 1 0係由絕緣材質所形成， 例如為藍寶石或玻璃。而N型半導體層220之材質可為氮 化鎵、氮化鋁鎵、氮化銦鎵、或氮化鋁銦鎵等。 至於，上述突起物3 1 0上則依序由下往上形成主動層 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) (請先閲讀背面之：'/X意事項再填寫本頁}Layer 270 N-type 275, transparent contact layer 280, P-type electrode 290, P-type pad 295, insulating layer 303, and conductive layer 3 〇〇 and the like. As can be seen from Fig. 5, the N-type semiconductor layer 22 is covered by the substrate 21, wherein a plurality of protrusions 310 are formed on a part of the surface of the N-type semiconductor layer 220, and the shape of the protrusions 310 can be, for example, a rectangular parallelepiped. And the protrusions 31〇 have a channel 3 2 0 between them. The substrate 2 10 is formed of an insulating material, such as sapphire or glass. The material of the N-type semiconductor layer 220 may be gallium nitride, aluminum gallium nitride, indium gallium nitride, or aluminum indium gallium nitride. As for the protrusions 310, the active layer is formed from bottom to top. The paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm). (Please read the back: '/X. This page}
1270990 A7 B7__ 五、發明説明（） 240、P型半導體層260、以及透明接觸層280之堆疊結構。 其中，主動層240係由具有雙異質接面結構或位能井結構 之氮化鎵、氮化鋁鎵、氮化銦鎵、或氮化鋁銦鎵等材質所 形成。另外，P型半導體層260亦由氮化鎵、氮化鋁鎵、 氮化銦鎵、或氮化銘銦錁等之材質所形成。而透明接觸層 2 8 0則由透明且可導電之材質所形成，藉以透光而又能兼 具可導電之需求。 而N型電極層270則附著於通道320中的部分N型半 導體·層2 2 0上。此外，複數個P型電極2 9 0係附著於透明 接觸層2 8 0之部分表面上。再者，絕緣層3 3 0係覆蓋約暴 露出之通道320之底部、透明接觸層280、與N型電極層 2 70，但暴露出部分之N型電極層270。此暴露出之部分N 型電極層270即為N型銲墊275,用以做為單元發光區200 進一步拉線至外部之接點。至於，導電層3 00係覆蓋絕緣 層3 3 0且用以連接複數個P型電極290，而其中至少一 P 型電極290係做為P型銲墊295，用以做為單元發光區200 進一步拉線至外部之另一接點。 本發明除提供一種發光二極_之結構外，更提供一種 發光二極體之製造方法，至少包括下列步驟。首先，提供 基板210。接著，形成N型半導體層220以覆蓋基板210， 其中 N型半導體層 220之部分表面上形成複數個突起物 310，而這些突起物310之間具有通道320。 接著，在突起物310上依序由下往上形成主動層240、 9 本纸張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ............ (請先閱讀背面之注意事項再填寫本買) 訂. 經濟部智慧財產局員工消費合作社印製 1270990 A7 經濟部智慧財產局員工消費合作社印製1270990 A7 B7__ V. Inventive Description () 240, a P-type semiconductor layer 260, and a transparent contact layer 280 stacked structure. The active layer 240 is formed of a material having a double heterojunction structure or a potential energy well structure such as gallium nitride, aluminum gallium nitride, indium gallium nitride, or aluminum indium gallium nitride. Further, the P-type semiconductor layer 260 is also formed of a material such as gallium nitride, aluminum gallium nitride, indium gallium nitride, or nitrided indium germanium. The transparent contact layer 280 is formed of a transparent and electrically conductive material, which is transparent and can be electrically conductive. The N-type electrode layer 270 is attached to a portion of the N-type semiconductor layer 2 2 0 in the channel 320. Further, a plurality of P-type electrodes 290 are attached to a part of the surface of the transparent contact layer 280. Further, the insulating layer 340 covers the bottom of the exposed via 320, the transparent contact layer 280, and the N-type electrode layer 270, but exposes a portion of the N-type electrode layer 270. The exposed portion of the N-type electrode layer 270 is an N-type pad 275, which serves as a contact for the unit light-emitting region 200 to be further drawn to the outside. As for the conductive layer 300, the insulating layer 310 is covered and used to connect a plurality of P-type electrodes 290, and at least one of the P-type electrodes 290 is used as a P-type pad 295 for use as a unit light-emitting region 200. Pull the wire to another contact on the outside. In addition to the structure of the light-emitting diode, the present invention further provides a method for manufacturing the light-emitting diode, comprising at least the following steps. First, a substrate 210 is provided. Next, an N-type semiconductor layer 220 is formed to cover the substrate 210, wherein a plurality of protrusions 310 are formed on a part of the surface of the N-type semiconductor layer 220, and the protrusions 310 have channels 320 therebetween. Next, the active layer 240, 9 is sequentially formed on the protrusion 310 from the bottom to the top. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210×297 mm) ............ Please read the precautions on the back and fill in the book.) Order. Ministry of Economic Affairs, Intellectual Property Bureau, Staff Consumer Cooperative, Printed 1270990 A7 Ministry of Economic Affairs, Intellectual Property Bureau, Staff Consumer Cooperative, Printed
本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公楚) 訂 % A 7 B7 經濟部智慧財產局員工消費合作社印製 1270990 五、發明説明（） 的N電極與P電極均各別串聯，因此可任意以單元發光區 之尺寸放大切割之元件尺寸。 本發明之再一優點為提供一種發光二極體之結構與製 造方法，可藉以提高大晶片尺寸之發光二極體之光取出 率。所謂光取出率是指發光二極體消耗單位電功率所能發 出的亮度。由於本發明之大晶片尺寸發光二極體上具有通 道3 20(第5圖），因此可減少光產生全反射之次數，且使光 提早由通道320射出，因而提高發光二極體之光取出率。 •如熟悉此技:術之人員所暸解的，以上所述僅為本發明 之較佳實施例而已，並非用以限定本發明之申請專利範 圍；凡其它未脫離本發明所揭示之精神下所完成之等效改 變或修飾，均應包含在下述之申請專利範圍内。 本纸張尺度適用中國國家標準(CNS)A4規格(210X297公釐) (請先閲讀背面之注意寧項再場寫本頁)This paper scale applies to China National Standard (CNS) A4 specification (210X 297 public Chu) Order % A 7 B7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed 1270990 V. Invention description () N electrode and P electrode are connected in series Therefore, the size of the cut component can be enlarged arbitrarily in the size of the unit light-emitting area. Still another advantage of the present invention is to provide a structure and a manufacturing method of a light-emitting diode which can improve the light extraction rate of a light-emitting diode of a large wafer size. The light extraction rate refers to the brightness that the light-emitting diode can emit per unit of electric power. Since the large wafer size light-emitting diode of the present invention has the channel 3 20 (Fig. 5), the number of times the light is totally reflected can be reduced, and the light is emitted early from the channel 320, thereby improving the light extraction of the light-emitting diode. rate. The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the invention as claimed in the present invention; Equivalent changes or modifications to the completion should be included in the scope of the following patent application. This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the note on the back and write this page again)