TWI497768B - Light emitting device chip, light emitting device package - Google Patents

Description

Light-emitting device chip and light-emitting device chip package

The present invention claims priority to Korean Patent No. 10-2010-0003544 filed on Jan. 14, 2010. This is incorporated herein by reference.

The present invention relates to a light emitting device wafer, and more particularly to a light emitting device package and an illumination system.

A light emitting device includes a p-n junction diode having the property of converting electrical energy into light energy. The p-n junction diode can be formed by combining III-V elements of the periodic table. The light-emitting device can exhibit various colors by adjusting the ratio of the composition of the compound semiconductor.

During this period, in order to realize the white light emitting device package, the light emitting devices that express the three primary colors of red, green and blue are combined with each other, and the yellow light emitting material (YAG or TAG) is newly added to the blue light emitting device, or red. Green, blue and blue light-emitting materials (YAG or TAG) have been added to the UV light-emitting device.

During this period, according to the white light emitting device package using the luminescent material of the related art, a light-emitting device wafer is positioned on the bottom surface of a reflective cup, and a sealing material containing the luminescent material is filled into the reflective cup, and A white light is formed by mixing light having a first wavelength and light generated by the luminescent material having a wavelength greater than the first wavelength.

However, according to the related art, the sealing material mixed with the luminescent material is filled into the reflecting cup, so the reflecting cup must be provided in the package.

In addition, according to the related art, the light-emitting device is adjacent to a layer of luminescent material, so that heat generated by the illuminating device is transmitted to the luminescent material layer, which will reduce the wavelength conversion efficiency of the luminescent material layer.

Moreover, according to the related art, the particles of the luminescent material sink in the process, and therefore the particle collection of the luminescent material depends on the process time.

In addition, according to the related art, the color temperature change may occur depending on the viewing angle.

Embodiments provide a light-emitting device wafer that can spontaneously generate white light by providing the light-emitting material layer on a light-emitting surface, a light-emitting device wafer, and a light-emitting device package.

The illuminating device wafer according to the embodiment may include: a light emitting structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer, the active layer being interposed between the first conductive semiconductor layer and the second Between the conductive semiconductor layers; a penetrating layer on the light-emitting structure; and a layer of luminescent material on the penetrating layer, wherein the luminescent material layer comprises a pattern that does not expose the penetrating layer and is partially exposed The penetrating layer, or a portion of the penetrating layer and the light emitting structure are partially exposed.

The illuminating device wafer according to the embodiment may include: a light emitting structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer, the active layer being interposed between the first conductive semiconductor layer and the second Between the conductive semiconductor layers; a penetrating layer on the light emitting structure; and a luminescent material layer on the penetrating layer, wherein the luminescent material layer is formed on one of the top surface and the plurality of sides of the light emitting structure.

In addition, the light emitting device package of the embodiment may include: a package body; at least one electrode layer on the package body; and the light emitting device chip electrically connected to the electrode layer.

In addition, the illumination unit according to the embodiment may include a light emitting module including a substrate and a light emitting device package, the light emitting device package being fixed on the substrate, wherein the light emitting device package may include: a package a body; a third and a fourth electrode layer on the package body; and the light-emitting device chip electrically connected to the electrode layer.

The above and other objects, features, and advantages of the present invention will become more apparent from the accompanying drawings.

A light-emitting device wafer, a light-emitting device package, and a lighting system of an embodiment of the present invention will now be described in detail with reference to the accompanying drawings.

In the following description, it will be understood that when a layer (or film) is referred to as being "above" another layer or substrate, it may be directly over another layer or substrate, or . In addition, it should also be understood that when a layer is referred to as being "under" another layer, it may be directly under another layer, or one or a plurality of intervening layers may be present. In addition, it should also be understood that when a layer is referred to as "between" and "between", the layer may be the only layer between the two layers, or it may have one or more intervening Layer. In the drawings, the dimensions of the various layers and regions may be exaggerated in light of the In addition, the dimensions of the various elements in the drawings do not reflect the true dimensions.

(Example)

1 is a cross-sectional view showing a light-emitting device wafer according to a first embodiment.

The light emitting device wafer 100 according to the embodiment may include a light emitting structure 110, a penetrating layer 130, and a light emitting material layer 140. The penetrating layer 130 is located on the light emitting structure 110. The luminescent material layer 140 is located on the penetrating layer 130.

In more detail, one of the bottom surfaces of the penetrating layer 130 is disposed on an upper surface of the light emitting structure 110.

According to the illuminating device wafer 100 of the present embodiment, the luminescent material layer 140 can be provided in the illuminating device wafer 100 such that the illuminating device wafer 100 spontaneously generates white light.

According to this embodiment, the penetrating layer 130 may have a lower thermal conductivity than the luminescent material layer 140 and a higher transmittance than the luminescent material layer 140.

In addition, according to the embodiment, the penetrating layer 130 having low thermal conductivity and high transmittance may be interposed between one of the light emitting surfaces of the light emitting device wafer 100 and the Between the luminescent material layers 140, whereby the heat generated by the illuminating surface of the illuminating structure 110 can be confined to avoid transmission to the luminescent material layer 140 to improve the wavelength conversion efficiency of the luminescent material.

The penetrating layer 130 may comprise a silicon gel, but is not intended to limit the embodiment.

The penetrating layer 130 may have a thickness of about 2 to 200 μm, but is not intended to limit the embodiment. For example, the penetrating layer 130 may have a thickness of about 2 μm or more than one of the first electrodes 120 formed on the light emitting structure 110, but is not intended to limit the embodiment. In addition, the penetrating layer 130 may have a thickness of about 200 μm or less than half the total thickness of the light-emitting device wafer 100, but is not intended to limit the embodiment.

In more detail, the light emitting structure 110 vertically overlaps the penetrating layer 130 and the luminescent material layer 140.

The penetrating layer 130 can be formed on one of the top surface and one side of the light emitting structure 110, but is not intended to limit the embodiment. For example, the penetrating layer 130 can be formed exclusively on the top or side of the light emitting structure 110.

The luminescent material layer 140 may have a thickness of about 5 to 500 μm, but is not intended to limit the embodiment. For example, the luminescent material layer 140 may have a thickness of about 5 [mu]m or greater to convert blue light to yellow light, or may have a thickness of about 500 [mu]m or less, depending on the size of the luminescent device wafer 100, but is not intended to limit the present embodiment.

According to this embodiment, the first electrode 120 can include an electrical property. A linear pattern of electrical connections, and one of the first electrodes 120 is electrically connected to a bare pad electrode (not shown).

According to the illuminating device wafer 100 of the present embodiment, the luminescent material layer 140 can be provided in the illuminating device wafer 100 such that the illuminating device wafer 100 spontaneously generates white light.

According to this embodiment, the lateral width of the light emitting structure 110 may be smaller than the lateral width of the second electrode 105, but is not intended to limit the embodiment.

In addition, the heat generated by the light emitting surface of the light emitting structure 110 can be confined to avoid transmission to the light emitting material layer 140, thereby improving the wavelength conversion efficiency of the light emitting material layer 140.

Hereinafter, a method of manufacturing a light-emitting device wafer according to the first embodiment will be described with reference to FIGS. 2 to 5.

As shown in FIG. 2, the light emitting device wafer 100 according to the first embodiment may include the light emitting structure 110 formed on the second electrode 105. The second electrode 105 can include at least one of an ohmic layer, a reflective layer, a bonding layer, and a conductive layer.

The light emitting structure 110 can include a second conductive semiconductor layer 116, an active layer 114, and a first conductive semiconductor layer 112.

Hereinafter, a method of forming the light emitting structure 110 on the second electrode 105 will be explained.

First, a first substrate (not shown) is prepared. The first substrate can include A sapphire substrate or a SiC substrate, but is not intended to limit the embodiment.

Then, the light emitting structure 110 including the first conductive semiconductor layer 112, the active layer 114, and the second conductive semiconductor layer 116 is formed on the first substrate.

The first conductive semiconductor layer 112 may include at least one selected from the group consisting of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, and InP. .

The first conductive semiconductor layer 112 may include an n-type GaN layer by Chemical Vapor Deposition (CVD), Molecular Beam Epitoxy (MBE), sputtering or hydride vapor phase Lei Formed by Hydride vapor phase epitaxy (HVPE) technology. In addition, the first conductive semiconductor layer 112 can be obtained by using trimethyl gallium (TMGa) gas, ammonia (NH ₃ ) gas, nitrogen (nitrogen; N ₂ ) gas, and decane containing n-type impurities. (silane; SiH ₄ ) gas is injected into the chamber to form.

According to this embodiment, an undoped semiconductor layer (not shown) is formed on the first substrate (not shown), and the first conductive semiconductor layer 112 is formed on the undoped semiconductor layer to mitigate The lattice between the first substrate and the light emitting structure 110 does not match.

The active layer 114 may include at least one of a single quantum well structure, a multiple quantum well (MQW) structure, a quantum wire structure, and a quantum dot. By. For example, the active layer 114 can form a multi-quantum well by injecting trimethylgallium (TMGa) gas, ammonia (NH ₃ ) gas, nitrogen (N ₂ ) gas, and trimethyl indium (TMIn) gas. (MQW) structure, but is not intended to limit the embodiment.

The active layer 114 may have a well/barrier layer including at least one of InGaN/GaN, InGaN/InGaN, AlGaN/GaN, InAlGaN/GaN, GaAs/AlGaAs (InGaAs), and GaP/AlGaP (InGaP). However, it is not intended to limit the embodiment. The well layer can comprise a material having a band gap energy that is lower than the barrier layer.

A conductive clad layer may be formed on and/or under the active layer 114. The conductive cap layer may comprise an AlGaN base semiconductor having a band gap energy higher than the active layer 114.

The second conductive semiconductor layer 116 includes a III-V compound semiconductor doped with a second conductive dopant. For example, the second conductive semiconductor layer 116 may include In _x Al _y Ga _1-xy N (0 x 1,0 y 1,0 x+y 1) The semiconductor material of the compound composition formula. In detail, the second conductive semiconductor layer 116 may include one selected from the group consisting of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. If the second conductive semiconductor layer 116 is a p-type semiconductor layer, the second conductive dopant comprises a p-type dopant such as Mg, Zn, Ca, Sr or Ba. The second conductive semiconductor layer 116 can be formed as a single layer or a plurality of layers, but is not intended to limit the embodiment.

The second conductive semiconductor layer 116 may include a p-type GaN layer by using a trimethyl gallium (TMGa) gas containing a p-type impurity (for example, Mg), ammonia (NH ₃ ) gas, Nitrogen (N ₂ ) gas and (EtCp ₂ Mg) {Mg(C ₂ H ₅ C ₅ H ₄ ) ₂ } gas are injected into the chamber, but are not intended to limit the present embodiment.

According to this embodiment, the first conductive semiconductor layer 112 may include an n-type semiconductor layer, and the second conductive semiconductor layer 116 may include a p-type semiconductor layer, but is not intended to limit the embodiment. In addition, a semiconductor layer, such as an n-type semiconductor layer (not shown), has a polarity opposite to that of the second conductive semiconductor layer 116. The semiconductor layer may be formed on the second conductive semiconductor layer 116. Therefore, the light emitting structure 110 may include one of an n-p bonding structure, a p-n bonding structure, an n-p-n bonding structure, and a p-n-p bonding structure.

Thereafter, the second electrode 105 is formed on the second conductive semiconductor layer 116.

The second electrode 105 can include an ohmic layer (not shown), a reflective layer (not shown), a bonding layer (not shown), and a conductive layer (not shown). The second electrode 105 may include at least one of Ti, Cr, Ni, Al, Pt, Au, W, Mo, and a semiconductor substrate doped with impurities.

For example, the second electrode 105 can include an ohmic layer. In the present case, the ohmic layer can form a plurality of layers by sequentially stacking a single metal, a metal alloy, and a metal oxide to promote hole injection. Lift For example, the ohmic layer may be selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc. Indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO) , antimony tin oxide (ATO), gallium zinc oxide (GZO), IZO nitride (IZ nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO) , ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt At least one of the group consisting of Au and Hf.

When the second electrode 105 includes the reflective layer, the reflective layer may comprise a metal or a metal alloy comprising Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf. At least one of the group formed. Further, the reflective layer can be formed into a plurality of layers by using the above metal or metal alloy and penetrating a conductive material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO or ATO. For example, the reflective layer may have a stacked structure including IZO/Ni, AZO/Ag, IZO/Ag/Ni, or AZO/Ag/Ni.

In addition, if the second electrode 105 includes the bonding layer, the reflective layer may serve as the bonding layer, or the bonding layer may include selected from the group consisting of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, and At least one of the groups formed by Ta.

Additionally, the second electrode 105 can include the second substrate. The second substrate may comprise a metal having a higher electrical conductivity, a metal alloy or a conductive semiconductor material for facilitating hole injection. For example, the second substrate may comprise a substrate selected from the group consisting of Cu, Cu alloy, Au, Ni, Mo, Cu-W, and carrier wafers, such as Si, Ge, GaAs, GaN, ZnO, SiGe, and SiC wafers. At least one of the group consisting of.

The second substrate can be formed by an electrochemical metal deposition design or a joint design using a eutectic metal.

Then, the first substrate is removed, whereby the first conductive semiconductor layer 112 can be exposed. The first substrate can be removed by a Laser Lift Off design or a Chemical Lift Off design. Additionally, the first substrate can be removed by grinding the first substrate.

Therefore, the light emitting structure 110 can be formed on the second electrode 105 as shown in FIG.

After the first substrate is removed, an etching process may be performed on the light emitting structure 110, such that the light emitting structure 110 may have a diagonal sidewall, but is not intended to limit the embodiment.

Then, the first electrode 120 is formed on the light emitting structure 110. The first electrode 120 can include a linear pattern having an electrical connection. The first electrode 120 is electrically connected to a bare pad electrode (not shown).

Thereafter, as shown in FIG. 3, the penetrating layer 130 is located in the light emitting structure 110. on.

For example, a first pattern 310 is formed on one side of the light emitting structure 110, and the penetrating layer 130 is formed by using the first pattern 310 as a barrier.

The penetrating layer 130 may have a thickness of about 2 to 200 μm, but is not intended to limit the embodiment. For example, the penetrating layer 130 may have a thickness of about 2 μm or more than the first electrode 120 formed on the light emitting structure 110, but is not intended to limit the embodiment. In addition, the penetrating layer 130 may have a thickness of about 200 μm or less than half the total thickness of the light-emitting device wafer, but is not intended to limit the embodiment.

The penetrating layer 130 may comprise a silicon gel, but is not intended to limit the embodiment.

According to the embodiment, the penetrating layer 130 having low thermal conductivity and high transmittance may be interposed between one of the light emitting surfaces of the light emitting device wafer 100 and the luminescent material layer 140, whereby the light emitting surface of the light emitting structure 110 The generated heat can be confined to avoid transmission to the luminescent material layer 140 to improve the wavelength conversion efficiency of the luminescent material.

Then, as shown in FIG. 4, the first pattern 310 can be removed and a second pattern 320 can be formed. Thereafter, the luminescent material layer 140 can be formed by using the second pattern 320 as a barrier.

The luminescent material layer 140 may have a thickness of about 5 to 500 μm, but is not intended to limit the embodiment. For example, the luminescent material layer 140 can have a large It is about 5 μm or larger than the thickness for converting blue light into yellow light, or may have a thickness of about 500 μm or less, which is necessary to consider the size of the light-emitting device wafer 100, but is not intended to limit the embodiment.

The luminescent material layer 140 can include a sealing material that includes a luminescent material to protect the illuminator wafer 100 and improve light extraction efficiency.

The sealing material may comprise an epoxy sealing material or a sealing material, but is not intended to limit the embodiment.

The luminescent material may comprise a host material and an active material. For example, the luminescent material may comprise a yttrium aluminum garnet (YAG) or a host material of a silicate-based material, and an active material of ruthenium or osmium, but is not intended to limit the embodiment. .

In order to complete the sealing of the sealing material, dispensing, casting molding, transfer molding, vacuum printing, or screen printing may be performed.

Thereafter, as shown in FIG. 5, the second pattern 320 is removed, thus providing the light-emitting device wafer 100 of the first embodiment.

According to the light-emitting device wafer 100 of the present embodiment, the light-emitting material layer 140 is provided in the light-emitting device wafer 100, whereby the light-emitting device wafer 100 spontaneously generates white light.

In addition, according to the embodiment, the light emitting surface of the light emitting structure 110 is produced. The generated heat can be confined to avoid transfer to the luminescent material layer 140 to improve the wavelength conversion efficiency of the luminescent material layer.

Figure 6 is a cross-sectional view showing a light-emitting device wafer 102 according to a second embodiment.

This second embodiment can take the technical features of the first embodiment.

According to the second embodiment, the luminescent material layer 140 includes a first luminescent material layer 141 and a second luminescent material layer 142. The first luminescent material layer 141 is located on the penetrating layer 130. The second luminescent material layer 142 is formed in a partial region or an entire region of the side of the light emitting structure 110. That is, the luminescent material layer is disposed on one of the upper surface and the one side surface of the penetrating layer. Although the entire area in which the second luminescent material layer 142 is formed on the side of the light emitting structure 110 is shown for illustrative purposes, it is not intended to limit the embodiment.

According to the second embodiment, after the penetrating layer 130 is formed, a third pattern (not shown) is formed spaced apart from the penetrating layer 130, and the third pattern acts as a barrier to form the luminescent material layer 140, but It is not intended to limit the embodiment.

According to the second embodiment, the proportion of light can be adjusted, for example, the blue light emitted by the light emitting surface of the light emitting device wafer 100 and the side taken out of the light emitting material layer 140 can be adjusted so that the optical characteristics can be controlled, such as color. Temperature changes can vary depending on the angle of view.

For example, the first luminescent material layer 141 can have a first thickness T1. And the second luminescent material layer 142 can have a second thickness T2.

According to the second embodiment, the second thickness T2 is twice or less than twice the larger than the first thickness T1. Although FIG. 6 shows that the second thickness T2 is smaller than the first thickness T1, this is for illustrative purposes only. In fact, the second thickness T2 is defined as 0<T2 2T1.

According to the second embodiment, by adjusting the second thickness T2 of the second luminescent material layer 142, the proportion of the light taken out from the side of the luminescent material layer 140 can be adjusted so that the optical characteristics can be controlled, for example, the color temperature. Changes can vary depending on the perspective.

In addition, according to the second embodiment, according to the proportion of the second luminescent material layer 142 formed on a part or the whole of the illuminating structure 110, the proportion of the light taken out from the side of the luminescent material layer 140 can be adjusted to make the optical Characteristics can be controlled, for example, color temperature changes can be based on viewing angle.

Fig. 7a is a cross-sectional view showing a light-emitting device wafer 103 according to a third embodiment.

This third embodiment can take the technical features of the first and second embodiments.

According to a third embodiment, the luminescent material layer 143 can comprise a patterned luminescent material layer.

According to the third embodiment, similar to the first embodiment, after the formation of the luminescent material layer, a predetermined patterning process is performed. Alternatively, a fourth pattern (not shown) is formed and the fourth figure is designed by a lift off design After the removal of the case, the layer of luminescent material is formed, but is not intended to limit the embodiment.

According to the third embodiment, the patterned luminescent material layer 143 is formed on the illuminating device wafer 103. Based on the patterned luminescent material layer 143, the light extraction area can be increased, thereby improving light extraction efficiency. .

According to the third embodiment, as shown in FIG. 7a, the penetrating layer 130 may be partially exposed from the patterned luminescent material layer 143, but is not intended to limit the embodiment. In addition, the penetrating layer 130 and the light emitting structure 110 may be partially exposed from the patterned luminescent material layer 143.

At least two first electrodes are above an upper surface of the light emitting structure, wherein the pattern of the light emitting material layer comprises at least two holes exposing the penetrating layer, and wherein the at least two holes vertically overlap the at least two first electrodes .

In more detail, the luminescent material layer includes a pattern partially exposed to the penetrating layer and the luminescent structure.

In addition, according to the third embodiment, the patterned luminescent material layer 143 may also be formed on the side of the light emitting structure 110. Therefore, light from the side of the light emitting structure 110 can be converted into white light. In addition, the patterned luminescent material layer 143 can be formed on a portion of the side of the light emitting structure 110 instead of the entire area of the side of the light emitting structure 110. The patterned luminescent material layer 143 is formed on the light emitting structure. The side of the 110 controls the color temperature of the light emitted by the illuminator wafer.

According to the third embodiment, the area of the patterned luminescent material layer 143 is adjusted to be between 30% and 90% of the light-emitting area of the illuminating device chip, so as to control the color temperature of the light emitted by the illuminating device wafer. .

Fig. 7b is a cross-sectional view showing the light-emitting device wafer 104 according to the fourth embodiment.

This fourth embodiment can take the technical features of the first to third embodiments.

According to the illuminating device wafer 104 of the fourth embodiment, the patterned luminescent material layer 143b may not expose the penetrating layer 130.

According to the fourth embodiment, the patterned luminescent material layer 143b is formed on the illuminating device wafer 104, and based on the patterned luminescent material layer 143b, the light extraction area can be increased, thereby improving light extraction efficiency. .

Fig. 8a is a cross-sectional view showing a light-emitting device wafer 200 according to a fifth embodiment.

The fifth embodiment is an example of a side-emitting light-emitting device wafer, and the technical features of the first to fourth embodiments can be adopted.

The illuminating device wafer 200 according to the fifth embodiment comprises a light emitting structure 210, a penetrating layer 230 and a luminescent material layer 240. The light emitting structure 210 is formed on a non-conductive substrate 205 and is provided with a first conductive semiconductor layer 212, an active layer 214 and a second conductive semiconductor layer 216. The penetrating layer 230 is located on the light emitting structure 210. The luminescent material layer 240 is located on the penetrating layer 230. A third electrode 222 is formed on the first conductive semiconductor layer 212, and a fourth electrode 226 is formed on the second conductive semiconductor layer 216.

Figure 8b is a cross-sectional view showing a light-emitting device wafer 202 according to a sixth embodiment.

The sixth embodiment can take the technical features of the first to fifth embodiments.

According to the sixth embodiment, the penetrating layer 230 may be partially exposed from the patterned luminescent material layer 240b, but is not intended to limit the embodiment. Additionally, the transmissive layer 230 and the light emitting structure 210 may be partially exposed from the patterned luminescent material layer 240b.

In addition, according to the sixth embodiment, a patterned sapphire substrate 207 is formed on the non-conductive substrate 205 for improving light extraction efficiency.

According to the light-emitting device wafer, the light-emitting device package, and the light-emitting device wafer manufacturing method of the present embodiment, the light-emitting material layer is formed in the light-emitting device wafer such that the light-emitting device wafer spontaneously generates white light.

In addition, according to the present embodiment, the heat generated by the light-emitting device wafer can be restrained from being transferred to the luminescent material layer to improve the wavelength conversion efficiency of the luminescent material layer.

Furthermore, according to the present embodiment, the luminescent material layer can be formed into various shapes, whereby optical characteristics can be controlled, for example, the color temperature change can be based on the viewing angle.

Further, according to the embodiment, the luminescent material layer is patterned on the illuminator wafer, thereby improving light extraction efficiency.

Figure 9 is a plan view showing a light-emitting device wafer according to this embodiment.

According to the embodiment, the illuminating device chip further includes a pad electrode 125 electrically connected to the first electrode 120, and the pad electrode 125 is exposed upward from the penetrating layer 130. For example, in the case of a vertical light-emitting device, when the light-emitting device is a mass storage, at least two pad electrodes 125 may be provided, but are not intended to limit the embodiment.

FIG. 10 shows a light emitting device package 500 according to a second embodiment, which includes the light emitting device wafer.

The light emitting device package 500 according to this embodiment includes a package body 505, fifth and sixth electrode layers 510, 520, the light emitting device wafer 100, and a molding component 540. The fifth and sixth electrode layers 510, 520 are formed on the package body 505. The illuminating device chip 100 is disposed on the package body 505 and electrically connected to the fifth and sixth electrode layers 510 and 520. The molding element 540 surrounds the light emitting device wafer 100.

The package body 505 may comprise germanium, a synthetic resin, or a metallic material. A bevel may be formed to surround the light emitting device wafer 100.

The fifth and sixth electrode layers 510, 520 are electrically isolated from each other and are used to supply power to the light emitting device wafer 100. In addition, the fifth and sixth electric The pole layers 510, 520 reflect the light emitted by the illuminator wafer 100 to improve light efficiency and diverge the heat generated by the illuminator wafer 100 to the outside.

The light emitting device wafers 100, 102, 103, 104 according to the first to fourth embodiments can be applied to the light emitting device package 500, and the light emitting device wafer 100 can be mounted to the package body 505, or the fifth and sixth On the electrode layers 510, 520.

The illuminating device chip 100 can be electrically connected to the fifth electrode layer 510 and/or the sixth electrode layer 520 via a wire 530. Although only one wire 530 is shown in FIG. 10, it is not intended to limit the embodiment. If the light-emitting device wafer according to the fourth embodiment is used, a plurality of wires can be used.

The molding element 540 surrounds the light emitting device wafer 100 for protecting the light emitting device wafer 100.

According to the illuminating device wafer and the illuminating device package of this embodiment, the luminescent material layer can be provided in the illuminating device wafer such that the illuminating device wafer spontaneously generates white light.

Additionally, according to this embodiment, the heat generated by the illuminator wafer can be constrained from being transferred to the luminescent material layer to improve the wavelength conversion efficiency of the luminescent material layer.

Further, according to this embodiment, the luminescent material layer can be formed into various shapes, whereby optical characteristics can be controlled, for example, the color temperature change can be based on the viewing angle.

Further, according to this embodiment, the luminescent material layer is patterned on the illuminator wafer, thereby improving light extraction efficiency.

The plurality of light emitting device packages according to the embodiment may be arranged in an array on a substrate, and an optical component including a light guide plate, a prism sheet, a diffusion sheet or a fluorescence sheet may be disposed in the light emitting device package. The optical path of the light emitted by the piece. The illuminating device package, the substrate and the optical component can be used as a backlight unit or a lighting unit. For example, the illumination system can include a backlight unit, a lighting unit, an indicator, a light tube, or a street light.

FIG. 11 is a perspective view showing a lighting unit 1100 according to this embodiment. The lighting unit 1100 of Figure 11 is an example of an illumination system and is not intended to limit the embodiment.

Referring to FIG. 11 , the lighting unit 1100 can include a housing 1110 , a lighting module 1130 , and a connecting end 1120 . The light emitting module 1130 is mounted in the housing 1110. The connecting end 1120 is mounted in the housing 1110 for receiving power from an external power source.

Preferably, the housing 1110 is preferably made of a material having good heat dissipation characteristics. For example, the housing 1110 comprises a metal or resin material.

The light emitting module 1130 can include a substrate 1132 and at least one light emitting device package 500. The light emitting device package 500 is fixed on the substrate 1132.

The substrate 1132 includes an insulating component printed with circuitry. For example, the substrate 1132 includes a printed circuit board, a metal core PCB, a flexible printed circuit board, or a ceramic printed circuit board.

Additionally, the substrate 1132 can comprise a material that is effective to reflect light. The surface of the substrate 1132 is coated with a color such as white, silver, or the like to effectively reflect light.

At least one of the light emitting device packages 500 can be mounted on the substrate 1132. Each of the light emitting device packages 500 can include at least one light emitting diode. The light-emitting diode comprises a light-emitting diode that emits red, green, blue or white light, and an ultraviolet light-emitting diode that emits ultraviolet light.

The light emitting device packages 500 of the light emitting module 1130 can have various combinations, which can provide various colors and brightness. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode can be combined to obtain a high color rendering index (CRI).

The connection end 1120 is electrically connected to the illumination module 1130 for providing power to the illumination module 1130. As shown in FIG. 11, the connector 1120 has a plug profile that is screwed and coupled to an external power source, but is not intended to limit the present embodiment. For example, the connection end 1120 can be fabricated in the shape of a plug and inserted into an external power, or can be electrically connected to the external power via a wire.

Fig. 12 is an exploded perspective view showing a backlight unit according to the embodiment. The backlight unit 1200 of FIG. 12 is an example of a lighting system, and is not used. To limit the embodiment.

The backlight unit 1200 according to the embodiment includes a light guide plate 1210, a light emitting module 1240, a reflective member 1220, and a bottom cover 1230. The light emitting module 1240 is configured to provide light to the light guide plate 1210. The reflector 1220 is located below the light guide plate 1210. The bottom cover 1230 is configured to receive the light guide plate 1210, the light emitting module 1240, and the reflector 1220, and is not intended to limit the embodiment.

The light guide plate 1210 diffuses light to provide a surface light source. The light guide plate 1210 includes a transparent material. For example, the light guide plate 1210 can be made of an acrylic series resin such as polymethyl methacrylate, polyethylene terephthalate (PET), polycarbonate (PC), Cycloolefin copolymer (COC) or polyethylene naphthalate (PEN).

The light emitting module 1240 provides light to the side of the light guide plate 1210 and serves as a light source for the display device including the backlight unit.

The illumination module 1240 provides light to be adjacent to the light guide plate 1210, and is not intended to limit the embodiment. In detail, the light-emitting module 1240 includes a substrate 1242 and a plurality of light-emitting device packages 500. The light-emitting device packages 500 are fixed on the substrate 1242, and the substrate 1242 can be adjacent to the light guide plate 1210. To limit the embodiment.

The substrate 1242 can include a printed circuit board having a circuit pattern (not shown). In addition, the substrate 1242 may also include a metal core printed circuit board. (metal core PCB) or a flexible printed circuit board is not intended to limit the embodiment.

In addition, the light emitting device packages 500 are configured to have a light exit surface of the light emitting device packages 500 separated from the light guide plate 1210 by a predetermined distance.

The reflector 1220 can be disposed below the light guide plate 1210. The reflector 1220 can reflect the light from the bottom surface of the light guide plate 1210 toward the light guide plate 1210, thereby improving the brightness of the backlight unit. For example, the reflective member 1220 may comprise polyethylene terephthalate (PET), polycarbonate (PC) or polyvinyl chloride (PVC) resin, and is not intended to limit the embodiment. .

The bottom cover 1230 is configured to receive the light guide plate 1210, the light emitting module 1240, and the reflector 1220 therein. To achieve this, the bottom cover 1230 can be formed into a box shape with a top surface that is open and is not intended to limit the embodiment.

The bottom cover 1230 can be made of a stamping process or an extrusion process of a metal material or a resin material.

According to the illuminating device wafer, the illuminating device package and the illumination system of the embodiment, the luminescent material layer is provided in the illuminating device wafer, so that the illuminating device wafer can spontaneously generate white light.

In addition, according to this embodiment, the heat generated by the light emitting device chip can be It is constrained to avoid transmission to the luminescent material layer to improve the wavelength conversion efficiency of the luminescent material layer.

Further, according to this embodiment, the luminescent material layer can be formed into various shapes, whereby optical characteristics can be controlled, for example, the color temperature change can be based on the viewing angle.

Further, according to this embodiment, the luminescent material layer is patterned on the illuminator wafer, thereby improving light extraction efficiency.

The "one embodiment", "an embodiment", "exemplary embodiment" and the like referred to in the specification are intended to indicate that the particular features, structures, or characteristics described in the embodiments are to be included in at least one embodiment. in. The terms appearing throughout the specification are not necessarily all present in the same embodiment. Furthermore, the particular features, structures, or characteristics of the invention are described in the embodiments of the invention.

The present invention has been disclosed in the foregoing embodiments, and is not intended to limit the present invention. Any of the ordinary skill in the art to which the invention pertains can be modified and modified without departing from the spirit and scope of the invention. . Therefore, the scope of the invention is defined by the scope of the appended claims.

100‧‧‧Lighting device chip

102‧‧‧Lighting device chip

103‧‧‧Lighting device chip

104‧‧‧Lighting device chip

105‧‧‧second electrode

110‧‧‧Lighting structure

112‧‧‧First conductive semiconductor layer

114‧‧‧Active layer

116‧‧‧Second conductive semiconductor layer

120‧‧‧first electrode

125‧‧‧ pads electrode

130‧‧‧ penetrating layer

140‧‧‧ luminescent material layer

141‧‧‧First luminescent material layer

142‧‧‧Second luminescent material layer

143‧‧‧ luminescent material layer

143b‧‧‧ patterned luminescent material layer

200‧‧‧Lighting device chip

205‧‧‧ Non-conductive substrate

207‧‧‧ patterned sapphire substrate

210‧‧‧Lighting structure

212‧‧‧First conductive semiconductor layer

214‧‧‧Active layer

216‧‧‧Second conductive semiconductor layer

222‧‧‧ third electrode

226‧‧‧fourth electrode

230‧‧‧ penetrating layer

240‧‧‧ luminescent material layer

240b‧‧‧ patterned luminescent material layer

310‧‧‧ first pattern

320‧‧‧second pattern

500‧‧‧Lighting device package

505‧‧‧ package body

510‧‧‧ fifth electrode layer

520‧‧‧ sixth electrode layer

530‧‧‧Wire

540‧‧·Molded components

1100‧‧‧Lighting unit

1110‧‧‧Shell

1120‧‧‧Connected end

1130‧‧‧Lighting Module

1132‧‧‧Substrate

1200‧‧‧Backlight unit

1210‧‧‧Light guide plate

1220‧‧‧reflector

1230‧‧‧ bottom cover

1240‧‧‧Lighting Module

1242‧‧‧Substrate

T1‧‧‧first thickness

T2‧‧‧second thickness

1 is a cross-sectional view showing a light-emitting device wafer according to a first embodiment; and FIGS. 2 to 5 are cross-sectional views showing a method of manufacturing a light-emitting device wafer according to the first embodiment; Figure 6 is a cross-sectional view showing a light-emitting device wafer according to a second embodiment; Figure 7a is a cross-sectional view showing a light-emitting device wafer according to a third embodiment; and Figure 7b is a cross-sectional view showing the fourth embodiment according to the fourth embodiment A light-emitting device wafer; FIG. 8a is a cross-sectional view showing a light-emitting device wafer according to a fifth embodiment; FIG. 8b is a cross-sectional view showing a light-emitting device wafer according to a sixth embodiment; A light emitting device wafer according to this embodiment is shown; FIG. 10 is a cross-sectional view showing a light emitting device package according to the embodiment; FIG. 11 is a perspective view showing a lighting unit according to the embodiment; and FIG. To disassemble the perspective view, it shows a backlight unit according to this embodiment.

100. . . Illuminating device chip

105. . . Second electrode

110. . . Light structure

112. . . First conductive semiconductor layer

114. . . Active layer

116. . . Second conductive semiconductor layer

120. . . First electrode

130. . . Penetrating layer

140. . . Luminescent material layer

Claims (20)

A light-emitting device wafer comprising: a light-emitting structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer, the active layer being interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a penetrating layer on the light emitting structure; and a layer of luminescent material on the penetrating layer, wherein the luminescent material layer comprises a pattern, the luminescent material layer partially exposing the penetrating layer and the illuminating structure, wherein The penetrating layer has a lower thermal conductivity than the luminescent material layer and a higher transmittance than the luminescent material layer. The illuminating device wafer of claim 1, wherein the luminescent material layer is formed on a portion or an entire area of a side of the illuminating structure, wherein a bottom surface of the penetrating layer is disposed on one of the illuminating structures Above the surface, wherein the pattern has at least two different heights. The illuminating device wafer of claim 1, wherein the penetrating layer has a thickness of from about 2 μm to about 200 μm, wherein the light emitting structure vertically overlaps the penetrating layer and the luminescent material layer. The illuminating device wafer of claim 1, wherein the luminescent material layer has a thickness of from about 5 μm to about 500 μm. The illuminating device wafer of claim 1, wherein the luminescent material layer retains an area between 30% and 90% of the illuminating area of the illuminating device wafer. The illuminating device chip according to claim 2, wherein the position is The layer of luminescent material on the side of the luminescent structure comprises the pattern. The illuminating device wafer according to claim 2, wherein a thickness of the luminescent material layer located on a side of the illuminating structure is twice or less than a thickness of the luminescent material layer formed on the penetrating layer. The thickness. The illuminating device wafer of claim 1, further comprising a second electrode under the illuminating structure, and at least two first electrodes on an upper surface of the illuminating structure, wherein the luminescent material The pattern of layers includes at least two holes exposing the penetrating layer, and wherein the at least two holes vertically overlap the at least two first electrodes. The illuminating device wafer of claim 8, wherein a lateral width of the illuminating structure is smaller than a lateral width of the second electrode. The illuminating device wafer of claim 1, further comprising a non-conductive substrate under the illuminating structure, wherein the penetrating layer comprises silicone. A light-emitting device wafer comprising: a light-emitting structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer, the active layer being interposed between the first conductive semiconductor layer and the second conductive semiconductor layer a penetrating layer on the light emitting structure; and a layer of luminescent material on the penetrating layer, wherein the penetrating layer is formed on a top surface and a plurality of sides of the light emitting structure, wherein the penetrating layer It has a heat transfer property lower than the luminescent material layer and a light transmittance higher than the luminescent material layer. The illuminating device wafer according to claim 11, wherein The penetrating layer has a thickness of from about 2 [mu]m to about 200 [mu]m, and wherein the light emitting structure vertically overlaps the penetrating layer and the layer of emissive material. The illuminating device wafer of claim 11, wherein the luminescent material layer comprises a pattern, wherein the luminescent material layer is disposed on an upper surface and a side surface of the one of the penetrating layers. The illuminating device wafer of claim 13, wherein the luminescent material layer pattern does not expose the penetrating layer, partially exposes the penetrating layer, or partially exposes the penetrating layer and the illuminating structure. The illuminating device wafer of claim 13 further comprising at least two first electrodes on an upper surface of the illuminating structure, wherein the luminescent material layer comprises a portion of the permeable layer and the illuminating structure a pattern, wherein the pattern of the luminescent material layer comprises at least two holes exposing the penetrating layer, wherein the at least two holes vertically overlap the at least two first electrodes, and wherein the luminescent material layer has a thickness of from about 5 μm to about 500 μm thickness. The illuminating device wafer of claim 13, wherein the luminescent material layer retains an area between 30% and 90% of the illuminating area of the illuminating device wafer. The illuminating device wafer of claim 11, further comprising a second electrode located below the illuminating structure. The illuminator wafer of claim 17, wherein one of the illuminating structures has a lateral width that is less than a lateral width of the second electrode. The illuminating device wafer of claim 11, further comprising a non-conductive substrate located below the illuminating structure. A light-emitting device package comprising: a package body; at least one electrode layer on the package body; and a light-emitting device wafer, such as any one of the light-emitting device wafers according to claim 1 or 11. And the illuminating device chip is electrically connected to the electrode layer.