JP2001156331A - Nitride semiconductor light emitting element - Google Patents

Nitride semiconductor light emitting element

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Publication number
JP2001156331A
JP2001156331A JP34003999A JP34003999A JP2001156331A JP 2001156331 A JP2001156331 A JP 2001156331A JP 34003999 A JP34003999 A JP 34003999A JP 34003999 A JP34003999 A JP 34003999A JP 2001156331 A JP2001156331 A JP 2001156331A
Authority
JP
Japan
Prior art keywords
nitride semiconductor
light emitting
type
emitting device
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP34003999A
Other languages
Japanese (ja)
Other versions
JP3659098B2 (en
Inventor
Toshio Komaki
稔生 小牧
Akiyuki Kitano
晃行 北野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
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Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP34003999A priority Critical patent/JP3659098B2/en
Publication of JP2001156331A publication Critical patent/JP2001156331A/en
Application granted granted Critical
Publication of JP3659098B2 publication Critical patent/JP3659098B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/494—Connecting portions
    • H01L2224/4945—Wire connectors having connecting portions of different types on the semiconductor or solid-state body, e.g. regular and reverse stitches

Abstract

PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element which utilizes a nitride semiconductor and can emit high-luminance light at a high luminous efficiency. SOLUTION: The light emitting element is constituted by laminating nitride semiconductors containing at least Ga upon a substrate in p- and n-type. Particularly, a plurality of nitride semiconductor layers is formed on the same film- forming substrate in a state where the layers are electrically separated from each other and each nitride semiconductor layer is electrically connected with a conductive wire.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は窒化物半導体を利用
した発光素子に関わり、特に発光効率を高めより高輝度
に発光可能な窒化物半導体発光素子を提供するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device using a nitride semiconductor, and more particularly to a nitride semiconductor light emitting device capable of increasing luminous efficiency and emitting light with higher luminance.

【０００２】[0002]

【従来技術】今日、窒化物半導体を利用した発光素子は
そのバンドギャップによって紫外域から赤色領域までが
効率よく発光可能な発光素子として注目されている。こ
のような窒化物半導体を用いた発光素子４００の一例を
図４に示す。図４にはサファイア基板上にＧａＮのバッ
ファ層を介してｎ型ＧａＮを利用したｎ型コンタクト
層、多重量子井戸構造とされるＧａＮ層とＩｎＧａＮ層
とを複数層積層させた発光層、ｐ型ＡｌＧａＮのクラッ
ド層、ｐ型ＧａＮのｐ型コンタクト層及びｐ型コンタク
ト層からなる窒化物半導体層４０１が形成されＬＥＤチ
ップである発光ダイオードを構成している。ｎ型コンタ
クト層の一部は露出されｎ型電極４０２が又透光性電極
４０３上にはｐ型電極４０４が積層されている。ｎ型及
びｐ型電極に電流を流すことにより、ＬＥＤチップから
所望の発光スペクトルを効率よく放出させることができ
る。2. Description of the Related Art At present, a light emitting device using a nitride semiconductor has been attracting attention as a light emitting device capable of efficiently emitting light in an ultraviolet region to a red region due to its band gap. FIG. 4 shows an example of a light-emitting element 400 using such a nitride semiconductor. FIG. 4 shows an n-type contact layer using n-type GaN via a GaN buffer layer on a sapphire substrate, a light emitting layer in which a plurality of GaN layers having a multiple quantum well structure and an InGaN layer are stacked, and a p-type layer. An AlGaN cladding layer, a p-type GaN p-type contact layer, and a nitride semiconductor layer 401 including a p-type contact layer are formed to constitute a light emitting diode as an LED chip. A part of the n-type contact layer is exposed, and an n-type electrode 402 is laminated on the light-transmitting electrode 403. By passing a current through the n-type and p-type electrodes, a desired emission spectrum can be efficiently emitted from the LED chip.

【０００３】しかしながら、窒化物半導体を利用した発
光素子の利用分野が広がるにつれて、より発光輝度が高
く、且つ消費電力の低い発光効率の優れた発光素子が要
望されている。特に、窒化物半導体を利用した発光素子
はその半導体特性が十分解明されていないことから、発
光素子の効率向上が極めて難しい。However, as the field of use of light emitting devices using nitride semiconductors has expanded, there has been a demand for light emitting devices having higher light emission luminance, lower power consumption and excellent light emission efficiency. In particular, it is extremely difficult to improve the efficiency of a light-emitting element using a nitride semiconductor because its semiconductor characteristics have not been sufficiently elucidated.

【０００４】[0004]

【発明が解決しようとする課題】したがって、上記発光
素子の構成では十分ではなく、本発明は更なる発光効率
向上が可能な窒化物半導体を利用した発光素子を提供す
ることにある。Therefore, the structure of the above light emitting element is not sufficient, and the present invention is to provide a light emitting element using a nitride semiconductor capable of further improving luminous efficiency.

【０００５】[0005]

【課題を解決するための手段】本発明は、基板上にｐ型
及びｎ型に積層された少なくともＧａを含む窒化物半導
体を有する発光素子である。特に、ｐ型及びｎ型に積層
された少なくともＧａを含む窒化物半導体層は同一成膜
基板上で電気的に複数分離してなり、それぞれ分離され
た個々の窒化物半導体層の電極を導電性ワイヤで電気的
に直列及び／又は並列に接続されている窒化物半導体発
光素子である。これによって、より発光輝度が高く、且
つ消費電力の低い発光効率の優れた発光素子とすること
ができる。SUMMARY OF THE INVENTION The present invention is a light emitting device having a p-type and n-type nitride semiconductor containing at least Ga stacked on a substrate. In particular, a plurality of nitride semiconductor layers containing at least Ga stacked in p-type and n-type are electrically separated on the same deposition substrate, and the electrodes of the separated nitride semiconductor layers are electrically conductive. It is a nitride semiconductor light emitting device that is electrically connected in series and / or in parallel by a wire. Accordingly, a light-emitting element with higher light emission luminance and lower power consumption and excellent light emission efficiency can be obtained.

【０００６】本発明の請求項２に記載の窒化物半導体発
光素子は、導電性ワイヤがそれぞれ電気的に分離された
個々の窒化物半導体層の電極をボールボンディングを用
いて順次結線されてなる窒化物半導体発光素子である。
これによって、ウエッジボンダーを用いて結線されたも
のと比べステッチボンドと同等の結線を行うことができ
る。したがって、成膜基板上に形成された各窒化物半導
体の配置や方向性に関係なくボンディングすることが可
能となる。これにより異種混合されたパターンでのボン
ディング可能化・ボンディング時間の短縮・電極接合強
度の向上を図ることができる。According to a second aspect of the present invention, there is provided a nitride semiconductor light-emitting device in which conductive wires are electrically connected to each other on the respective nitride semiconductor layers by ball bonding. An object semiconductor light emitting device.
As a result, a connection equivalent to a stitch bond can be performed as compared with a connection using a wedge bonder. Therefore, bonding can be performed regardless of the arrangement and directionality of each nitride semiconductor formed on the film formation substrate. As a result, it is possible to enable bonding in a mixed pattern, to shorten the bonding time, and to improve the electrode bonding strength.

【０００７】本発明の請求項３に記載の窒化物半導体発
光素子は、窒化物半導体層の少なくとも一部の電極は、
ステッチボンディングされたワイヤ上に、ボールボンデ
ィングされ隣接する窒化物半導体層の電極と電気的に接
続されてなる窒化物半導体発光素子である。これによっ
て、ステッチボンディング上にボールボンディングをす
る場合においても、同一成膜基板上であるため信頼性よ
く比較的強固に密着することができる。また、小型化時
においても量産性よく窒化物半導体を形成させることが
できる。これによって、より発光効率を高めた窒化物半
導体発光素子とすることができる。According to a third aspect of the present invention, in the nitride semiconductor light emitting device, at least a part of the electrodes of the nitride semiconductor layer may include:
A nitride semiconductor light emitting device is formed by ball bonding on stitch-bonded wires and electrically connected to electrodes of an adjacent nitride semiconductor layer. Accordingly, even when ball bonding is performed on stitch bonding, since the same film is formed on the same film-forming substrate, relatively firm adhesion can be achieved with high reliability. In addition, a nitride semiconductor can be formed with good mass productivity even when downsized. Thus, a nitride semiconductor light emitting device with higher luminous efficiency can be obtained.

【０００８】[0008]

【発明の実施の形態】本発明は種々の実験の結果、窒化
物半導体発光素子から放出される光は同一電圧を印可し
たときに発光する発光強度はその面積の大きさに比例し
ないことを見出し本発明をなすに至った。さらに、この
ような発光素子における結線がで量産性や信頼性が大き
く変わることを見出し本発明を成すにいたった。BEST MODE FOR CARRYING OUT THE INVENTION As a result of various experiments, the present invention has found that the light emitted from a nitride semiconductor light emitting device emits light when the same voltage is applied, and the light emission intensity is not proportional to the size of the area. The present invention has been made. Further, the inventors have found that the connection in such a light emitting element greatly changes mass productivity and reliability, and have accomplished the present invention.

【０００９】すなわち、窒化物半導体発光素子において
は同一電流を流した場合、発光素子を大きくすればする
ほど、その発光面積の増大に伴って発光輝度が高くなる
ものではない。むしろ発光効率が低下する傾向にある。
そのため、本発明は複数の窒化物半導体を直列接続させ
た発光素子とすることにより、同一発光面積の単一発光
素子よりも発光効率の優れた発光素子としうるものであ
る。なお、本発明による発光効率向上は不明であるが窒
化物半導体自体の抵抗が高く、欠陥が多いことに起因し
ていると考えられる。次に、発光効率を向上させるため
に、同一成膜基板上を複数の窒化物半導体を積層させ、
それぞれの電極を導電性ワイヤを用いて電気的に接続さ
せた場合、直並列接続の組合せによっては極めて狭い箇
所に方向性なく強固にワイヤを密着させる必要がある。
このような場合、ボールボンディングを利用し、ステッ
チボンディング上には再びボールを形成させることで安
定性よく密着性を向上させることができる。特に、本発
明のごときく極めて狭い空間でもワイヤボンディングさ
せる場合は、同一成膜基板にステッチボンド及びボール
ボンドを続けて行っても安定して密着性よく形成するこ
とができる。That is, when the same current flows in a nitride semiconductor light emitting device, the larger the light emitting device, the higher the light emission luminance does not increase as the light emitting area increases. Rather, the luminous efficiency tends to decrease.
Therefore, the present invention can provide a light-emitting element having a higher luminous efficiency than a single light-emitting element having the same light-emitting area by using a plurality of nitride semiconductors connected in series. Although the improvement in luminous efficiency according to the present invention is unknown, it is considered that the improvement is due to the high resistance of the nitride semiconductor itself and many defects. Next, in order to improve luminous efficiency, a plurality of nitride semiconductors are stacked on the same deposition substrate,
When each electrode is electrically connected using a conductive wire, depending on the combination of the series-parallel connection, it is necessary to firmly adhere the wire to an extremely narrow place without directivity.
In such a case, by using ball bonding and forming a ball again on the stitch bonding, the adhesion can be improved with good stability. In particular, in the case of performing wire bonding even in a very narrow space as in the present invention, even if stitch bonding and ball bonding are continuously performed on the same film-forming substrate, it is possible to stably form with good adhesion.

【００１０】以下、本発明の窒化物半導体発光素子につ
いて図1を用いて説明する。図１は本発明の窒化物半導
体発光素子を示した模式的平面図であり、図２は図１の
ＡＡ断面図である。略矩形状のサファイア基板１０５上
に複数の島状に分離した窒化物半導体層１０１が形成さ
れている。島状に分離した窒化物半導体層１０１はそれ
ぞれがサファイア基板１０５上に、ＧａＮを用いたバッ
ファ層２０１、ｎ型コンタクト層となるＧａＮ２０２、
ＩｎＧａＮとＧａＮとを複数組積層させた量子井戸構造
とされる発光層２０３、ｐ型クラッド層となるＡｌＧａ
Ｎ２０４、ｐ型コンタクト層となるＧａＮ２０５が順次
積層されている。ｐ型コンタクト層上にはほぼ全面に透
光性電極２０６及びその上にｐ型台座電極２０７が設け
られている。他方、エッチングにより矩形状窒化物半導
体の一部を部分的に除去してｎ型コンタクト層を露出さ
せてある。なお、ｎ型コンタクト層の露出とサファイア
基板上に各窒化物半導体を島状に分離させることをエッ
チングにより同時に行うこともできる。ｎ型コンタクト
層上にはｎ型の台座電極が形成されており、平面状から
見てｐ型台座電極とｎ型台座電極とが矩形形状の対向す
る隅部に配置されている。また、島状に分離された各ｐ
型及びｎ型の台座電極は、サファイア基板の外周状に沿
って隣り合う島状の窒化物半導体と近接して配置されて
いる。少なくとも一箇所のｐ型及びｎ型台座電極間は金
線を利用してダイボンド接続され直列接続されている。
台座電極間が近接して配置されているために、金線の使
用量が極めて少なくてすむ。また、対向する隅部に各ｐ
型及びｎ型の台座電極が設けられていることにより、島
状に分離した窒化物半導体層から均一に発光することが
できる。さらに、サファイア基板の外周に沿ってｐ型及
びｎ型の台座電極が設けられていることにより、窒化物
半導体発光素子の中心光度を向上させることができる。
そのため、このような発光素子をレンズ効果のあるモー
ルド部材で被覆させるときには光学設計を極めて簡単に
行うことができる。なお、各島状の窒化物半導体層を電
気的に絶縁するために絶縁性保護膜２０８を形成しても
よい。Hereinafter, the nitride semiconductor light emitting device of the present invention will be described with reference to FIG. FIG. 1 is a schematic plan view showing a nitride semiconductor light emitting device of the present invention, and FIG. 2 is a cross-sectional view along AA in FIG. A plurality of island-shaped nitride semiconductor layers 101 are formed on a substantially rectangular sapphire substrate 105. Each of the nitride semiconductor layers 101 separated into islands is formed on a sapphire substrate 105 on a buffer layer 201 using GaN, a GaN 202 serving as an n-type contact layer,
A light emitting layer 203 having a quantum well structure in which a plurality of sets of InGaN and GaN are stacked, and an AlGa layer serving as a p-type cladding layer
N204 and GaN205 to be a p-type contact layer are sequentially laminated. A light-transmitting electrode 206 is provided on almost the entire surface of the p-type contact layer, and a p-type pedestal electrode 207 is provided thereon. On the other hand, a part of the rectangular nitride semiconductor is partially removed by etching to expose the n-type contact layer. Note that the exposure of the n-type contact layer and the separation of the respective nitride semiconductors on the sapphire substrate into islands can be simultaneously performed by etching. An n-type pedestal electrode is formed on the n-type contact layer, and a p-type pedestal electrode and an n-type pedestal electrode are arranged at opposing corners of a rectangular shape when viewed from a plane. In addition, each p separated in an island shape
The type and n-type pedestal electrodes are arranged close to adjacent island-shaped nitride semiconductors along the outer periphery of the sapphire substrate. At least one of the p-type and n-type pedestal electrodes is die-bonded using a gold wire and connected in series.
Since the pedestal electrodes are arranged close to each other, the amount of gold wire used can be extremely small. In addition, each p
The provision of the base and n-type pedestal electrodes enables uniform light emission from the nitride semiconductor layer separated into islands. Further, since the p-type and n-type pedestal electrodes are provided along the outer periphery of the sapphire substrate, the central luminous intensity of the nitride semiconductor light emitting device can be improved.
Therefore, when such a light emitting element is covered with a mold member having a lens effect, the optical design can be extremely easily performed. Note that an insulating protective film 208 may be formed to electrically insulate the island-shaped nitride semiconductor layers.

【００１１】図中では４個の島状に分離させたｐ型及び
ｎ型がそれぞれ積層された窒化物半導体を金線で３箇所
直列に接続させてある。金線にて接続させていない隣接
する窒化物半導体層上のｐ型及びｎ型の台座電極は、窒
化物半導体発光素子のｐ電極及びｎ電極として機能する
こととなる。各ワイヤー１０３は、窒化物半導体層の一
方の電極上でボールボンディングし第一のボール部１０
２を形成した後、隣接する窒化物半導体層の電極とステ
ッチボンディングする。このステッチチボンディング部
にはこの上から更にボールボンディングを行い第二のボ
ール部１０４を形成させるる。以下、本発明の窒化物半
導体発光素子の具体的形成方法について説明するがこれ
のみに限られないことはいうまでもない。In the figure, three islands of p-type and n-type nitride semiconductors, each of which is separated into islands, are connected in series at three locations by gold wires. The p-type and n-type pedestal electrodes on the adjacent nitride semiconductor layers that are not connected by the gold wire function as the p-electrode and the n-electrode of the nitride semiconductor light-emitting element. Each wire 103 is ball-bonded on one electrode of the nitride semiconductor layer to form a first ball portion 10.
After the formation of No. 2, stitch bonding is performed with the electrode of the adjacent nitride semiconductor layer. The ball bonding is further performed on the stitch bonding portion to form a second ball portion 104. Hereinafter, a specific method for forming the nitride semiconductor light emitting device of the present invention will be described, but it goes without saying that the present invention is not limited to this.

【００１２】[0012]

【実施例】あらかじめ、酸で表面を洗浄させた２インチ
のサファイア基板（α−アルミナ基板）をＭＯＣＶＤ法
を利用する反応装置内に配置させる。真空排気後、１０
００℃にまで上げクリーニングを行う。続いて、水素ガ
スを流しながら大気圧とさせる。次に、成膜温度を５３
０℃に下げ反応装置内に、原料ガスとしてＴＭＧ（トリ
メチルガリウム）、窒素ガスをキャリアガスとして水素
ガスと共に流し、厚さ約２００ÅのＧａＮ層を成膜させ
る。なお、バッファ層は窒化物半導体と基板との格子不
整合を緩和させるために設けられるものであり、ＧａＮ
の他、ＡｌＮ、ＧａＡｌＮなどを好適に利用することが
できる。また、基板はサファイアの他、スピネル、ルビ
ーなど種々のものを利用することができる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A 2-inch sapphire substrate (.alpha.-alumina substrate), the surface of which has been cleaned in advance with an acid, is placed in a reactor utilizing MOCVD. After evacuation, 10
The temperature is raised to 00 ° C. for cleaning. Subsequently, the pressure is adjusted to atmospheric pressure while flowing hydrogen gas. Next, the film formation temperature is set to 53
The temperature is lowered to 0 ° C., and TMG (trimethyl gallium) as a source gas and a nitrogen gas are flowed together with a hydrogen gas as a carrier gas in the reactor to form a GaN layer having a thickness of about 200 °. The buffer layer is provided to alleviate lattice mismatch between the nitride semiconductor and the substrate.
In addition, AlN, GaAlN, or the like can be suitably used. As the substrate, various substrates such as spinel and ruby can be used in addition to sapphire.

【００１３】次に、一旦キャリアガスのみとした後に成
膜温度を１０５０℃に上げる。成膜温度が一定となった
後に原料ガスとしてＴＭＧガス、窒素ガス、ドーパント
ガスとしてシランガス、キャリアガスとして水素ガスを
流しｎ型ＧａＮであるコンタクト層兼クラッド層を成膜
させる。なお、窒化物半導体は静電耐圧が他の半導体に
比べて低いため、ｎ型コンタクト層をアンドープのＧａ
Ｎなどでサンドイッチさせ結晶性と耐電圧を向上させ得
るように構成しても良い。Next, the film forming temperature is increased to 1050 ° C. after once using only the carrier gas. After the film formation temperature becomes constant, a contact layer / cladding layer of n-type GaN is formed by flowing TMG gas and nitrogen gas as source gases, silane gas as a dopant gas, and hydrogen gas as a carrier gas. Since the nitride semiconductor has a lower electrostatic withstand voltage than other semiconductors, the n-type contact layer has an undoped Ga.
It may be configured such that it can be sandwiched with N or the like to improve the crystallinity and the withstand voltage.

【００１４】次に、活性層としてＧａＮとＩｎＧａＮの
多層膜を形成させる。成膜温度を１０５０℃に維持した
まま、原料ガスとしてＴＭＧガス、窒素ガス及びキャリ
アガスとして水素ガスを流してＧａＮ層を形成する。続
いて、一旦キャリアガスのみとして、成膜温度を８００
℃にまで低下させる。温度が一定となった後に、原料ガ
スとしてＴＭＧガス、ＴＭＩ（トリメチルインジウム）
ガス、窒素ガスを流し、ＩｎＧａＮ層を形成させる。こ
れを３回繰り返した後、最後に上述のアンドープＧａＮ
と同様の成膜条件にてＧａＮ層を成膜させる。これによ
り、多重量子井戸構造とされる活性層を成膜させる。発
光素子の発光スペクトルは井戸層のバンドギャップに左
右されるためＩｎＧａＮの他、ＡｌＧａＩｎＮやＡｌＧ
ａＮなどとすることができる。同様に、Ｓｉなどのｎ型
不純物やＭｇなどのｐ型不純物を含有させることもでき
る。Next, a multilayer film of GaN and InGaN is formed as an active layer. While maintaining the film formation temperature at 1050 ° C., a GaN layer is formed by flowing a TMG gas as a source gas, a nitrogen gas, and a hydrogen gas as a carrier gas. Subsequently, the deposition temperature is set to 800 once using only the carrier gas.
To ℃. After the temperature becomes constant, TMG gas and TMI (trimethylindium) are used as source gases.
A gas and a nitrogen gas are flowed to form an InGaN layer. After repeating this three times, finally, the undoped GaN
A GaN layer is formed under the same film forming conditions as described above. Thus, an active layer having a multiple quantum well structure is formed. Since the emission spectrum of the light emitting element depends on the band gap of the well layer, AlGaInN or AlG
aN or the like. Similarly, an n-type impurity such as Si or a p-type impurity such as Mg can be contained.

【００１５】活性層成膜後、成膜温度を１０５０℃に保
持して、原料ガスをＴＭＡ（トリメチルアルミニウム）
ガス、ＴＭＧガス、窒素ガス、ドーパントガスとしてＣ
ｐ2Ｍｇガス及びキャリアガスとして水素ガスを流し、
ｐ型クラッド層となるＡｌＧａＮ層を成膜させる。ｐ型
クラッド層は結晶性を向上させためにＧａＮとＡｌＧａ
Ｎの超格子構造とさせることもできる。After forming the active layer, the film forming temperature is maintained at 1050 ° C., and the source gas is TMA (trimethyl aluminum).
Gas, TMG gas, nitrogen gas, C as dopant gas
flowing hydrogen gas as p 2 Mg gas and carrier gas,
An AlGaN layer serving as a p-type cladding layer is formed. The p-type cladding layer is made of GaN and AlGa to improve crystallinity.
A superlattice structure of N may be used.

【００１６】成膜温度を維持したまま、原料ガスをＴＭ
Ｇガス、窒素ガス、ドーピングガスとしてＣｐ２Ｍｇガ
ス及びキャリアガスとして水素ガスを流し、ｐ型コンタ
クト層となるＧａＮ層を成膜させることができる。While maintaining the film forming temperature, the raw material gas is
By flowing a G gas, a nitrogen gas, a Cp2Mg gas as a doping gas and a hydrogen gas as a carrier gas, a GaN layer serving as a p-type contact layer can be formed.

【００１７】こうして成膜させた窒化物半導体ウエハに
マスクをかけた後、エッチングにより本発明のごとく、
同一成膜基板上に電気的に分離され且つ、ｐｎ接合など
を持った複数の島状半導体の窒化物半導体を個々に形成
する。ｎ型電極を形成させるｎ型コンタクト層の一部及
び窒化物半導体を島状に分離させマスクを除去後、再び
電極形成用のマスクを形成させてスパッタリング法によ
りｐ型透光性電極としてＡｕを成膜させる。After a mask is applied to the nitride semiconductor wafer thus formed, etching is performed, as in the present invention,
A plurality of island-shaped semiconductor nitride semiconductors which are electrically separated and have a pn junction or the like are individually formed on the same film formation substrate. After the part of the n-type contact layer for forming the n-type electrode and the nitride semiconductor are separated into islands and the mask is removed, a mask for forming an electrode is formed again, and Au is used as a p-type translucent electrode by a sputtering method. The film is formed.

【００１８】ｐ型台座電極としてＮｉ／Ａｕ及びｎ型台
座電極としてＷ／Ａｌを、あらかじめ図１のごとく配置
できるようにマスクを形成してある。電極形成後、電極
表面を残して、ＳｉＯ2により保護膜を形成させる。A mask is formed in advance so that Ni / Au as a p-type pedestal electrode and W / Al as an n-type pedestal electrode can be arranged as shown in FIG. After the electrodes are formed, a protective film is formed of SiO 2 while leaving the electrode surface.

【００１９】続いて島状に分離した４個の窒化物半導体
をひとまとめにして、ダイサー及びスクライバーにより
分離した溝に沿ってサファイア基板を切断する。Subsequently, the four nitride semiconductors separated into islands are put together, and the sapphire substrate is cut along the grooves separated by a dicer and a scriber.

【００２０】次に、島状の窒化物半導体のｎ型台座電極
と、隣り合う島状の窒化物半導体のｐ型台座電極とをワ
イヤボンディングにより電気的に直列接続させる。より
具体的には、あらかじめ金線にボールを形成させた後、
島状窒化物半導体のｎ型台座電極或いはｐ型台座電極に
ボールボンディングさせる。ボールボンディングさせた
金線を延ばしつつ、隣り合う島状窒化物半導体のｐ型台
座電極或いはｎ型台座電極にステッチボンディングさせ
隣り合う島状窒化物半導体を直列接続させる。続いて、
成膜基板上に形成された窒化物半導体を固定させるワー
クを回転させることなく、一度ステッチボンディングさ
せたワイヤ上に再びボールボンディングを行う。続い
て、ステッチボンディング上にボールボンディングさせ
た金線を延ばしつつ、次に隣り合う隣り合う島状窒化物
半導体のｐ型台座電極或いはｎ型台座電極にステッチボ
ンディングさせ隣り合う島状窒化物半導体を電気的に直
列接続させる。なお、窒化物半導体の大きさが極めて小
さい場合、ボールボンディングをｎ型及びｐ型台座電極
に直接押しつけることによって一度に直列接続させるこ
ともできる。Next, an n-type pedestal electrode of an island-shaped nitride semiconductor and an adjacent p-type pedestal electrode of an island-shaped nitride semiconductor are electrically connected in series by wire bonding. More specifically, after forming a ball on a gold wire in advance,
Ball bonding is performed to the n-type pedestal electrode or the p-type pedestal electrode of the island-shaped nitride semiconductor. While the ball-bonded gold wire is extended, the adjacent island-shaped nitride semiconductors are connected in series by stitch bonding to adjacent p-type pedestal electrodes or n-type pedestal electrodes of the island-shaped nitride semiconductors. continue,
The ball bonding is performed again on the wire that has been stitch-bonded once without rotating the work for fixing the nitride semiconductor formed on the deposition substrate. Subsequently, while extending the gold wire that has been ball-bonded on the stitch bonding, the next adjacent island-shaped nitride semiconductor is stitch-bonded to the p-type pedestal electrode or the n-type pedestal electrode of the next adjacent island-shaped nitride semiconductor. Electrically connected in series. When the size of the nitride semiconductor is extremely small, it is also possible to perform series connection at a time by directly pressing the ball bonding against the n-type and p-type pedestal electrodes.

【００２１】同一の発光面積を持った単一窒化物半導体
発光素子に比べて、同一成膜基板上に形成させた複数の
窒化物半導体からなる窒化物半導体発光素子の方が発光
効率が高い。そのために直列接続のみに限らず、並列接
続或いは直並列接続した本発明の窒化物半導体発光素子
とさせることもできる。また、各島状窒化物半導体を集
中して配置させることもできるし、図３のごとく、直線
上に配置させることもできる。サファイア基板３０５上
に形成させた島状の窒化物半導体素子３０１を図３
（Ａ）に示すようにワイヤー３０３で直列接続させる場
合、各島状窒化物半導体に抵抗を少なく電流を流す必要
があることからボワイヤボンディングにより直列接続さ
せることが好ましい。特に、ボールボンディングさせた
第一のボール部３０２の他方に形成されるステッチボン
ディング上には再びボールとして第二のボール部３０４
を形成することが好ましい。同様に図３（Ｂ）に示すご
とく並列接続させることもできる。As compared with a single nitride semiconductor light emitting device having the same light emitting area, a nitride semiconductor light emitting device comprising a plurality of nitride semiconductors formed on the same film-forming substrate has higher luminous efficiency. Therefore, the nitride semiconductor light emitting device of the present invention is not limited to the series connection, but may be connected in parallel or in series / parallel. Further, the island-shaped nitride semiconductors can be arranged in a concentrated manner, or can be arranged on a straight line as shown in FIG. An island-shaped nitride semiconductor device 301 formed on a sapphire substrate 305 is shown in FIG.
In the case of connecting in series with the wire 303 as shown in (A), it is preferable to connect in series by wire bonding since it is necessary to flow a current through each island-shaped nitride semiconductor with a small resistance. In particular, the second ball portion 304 is again formed as a ball on the stitch bonding formed on the other side of the ball-bonded first ball portion 302.
Is preferably formed. Similarly, they can be connected in parallel as shown in FIG.

【００２２】島状窒化物半導体の個々の大きさが約１５
０μｍ角として上述の窒化物半導体発光素子を形成させ
る。また、本発明と比較のために発光面積がほぼ同様と
させ、一つの窒化物半導体を積層させた以外は同様にし
て約６００μｍ角の窒化物半導体発光素子を形成させ
る。本発明の窒化物半導体発光素子の発光強度を１００
として比較したところ、比較のための発光素子は８２％
にしかすぎなかった。本発明の窒化物半導体は一つの窒
化物半導体に比較して発光効率が優れていることが分か
ったが、島状窒化物半導体の個々の大きさがそれぞれ約
８０μｍより大きく、約３００μｍ未満において、より
量産性を満たしつつ効率を向上させることができる。し
たがって、より発光面積の大きい窒化物半導体を高輝度
に発光させるためには、個々に分割させた窒化物半導体
を直列に接続させた窒化物半導体とすることが好まし
い。なお、図においては、正方形の窒化物半導体素子の
みを示したが、サファイア基板の分離しやすさのために
菱形やフリップチップ実装を考慮した長方形としたもの
にも応用できる。The individual size of the island-shaped nitride semiconductor is about 15
The above-described nitride semiconductor light emitting device is formed to have a size of 0 μm square. For comparison with the present invention, a nitride semiconductor light emitting device of about 600 μm square is formed in the same manner except that the light emitting area is substantially the same and one nitride semiconductor is laminated. The light emission intensity of the nitride semiconductor light emitting device of the present invention is 100
As a result, the light emitting element for comparison was 82%
It was just nothing. It has been found that the nitride semiconductor of the present invention is superior in luminous efficiency as compared to one nitride semiconductor, but the individual sizes of the island-shaped nitride semiconductors are each larger than about 80 μm and less than about 300 μm, Efficiency can be improved while satisfying mass productivity. Therefore, in order to emit a nitride semiconductor having a larger light emitting area with high luminance, it is preferable to use a nitride semiconductor in which individually divided nitride semiconductors are connected in series. Although only a square nitride semiconductor device is shown in the drawing, the present invention can be applied to a rhombus or a rectangular shape considering flip-chip mounting in order to easily separate a sapphire substrate.

【００２３】[0023]

【発明の効果】本発明の窒化物半導体発光素子とするこ
とによって、大面積においても効率よく発光可能な窒化
物半導体発光素子とすることができる。また、ウエッジ
ボンダーでのステッチボンドではできなかった方向性な
くボンディングすることが可能となる。したがって、異
種混合されたパターンでのボンディグ可能化・ボンディ
グ時間の短縮・電極接合強度の向上を図ることが可能と
なる。According to the nitride semiconductor light emitting device of the present invention, a nitride semiconductor light emitting device capable of efficiently emitting light even in a large area can be obtained. Also, bonding can be performed without directionality, which cannot be achieved by stitch bonding using a wedge bonder. Therefore, it becomes possible to enable bonding in a heterogeneous pattern, shorten the bonding time, and improve the electrode bonding strength.

【図面の簡単な説明】[Brief description of the drawings]

【図１】 本発明の窒化物半導体発光素子の模式的平面
図である。FIG. 1 is a schematic plan view of a nitride semiconductor light emitting device of the present invention.

【図２】 図１のＡＡ断面における模式的断面図であ
る。FIG. 2 is a schematic cross-sectional view taken along the line AA in FIG.

【図３】 図３（Ａ）は直列接続させた本発明の別の窒
化物半導体発光素子の模式的平面図であり、図３（Ｂ）
は、並列接続させた本発明の窒化物半導体発光素子の模
式的平面図である。FIG. 3A is a schematic plan view of another nitride semiconductor light emitting device of the present invention connected in series, and FIG.
FIG. 1 is a schematic plan view of a nitride semiconductor light emitting device of the present invention connected in parallel.

【図４】 本発明と比較のために示す窒化物半導体発光
素子の模式的平面図である。FIG. 4 is a schematic plan view of a nitride semiconductor light emitting device shown for comparison with the present invention.

【符号の説明】[Explanation of symbols]

１００…本発明の窒化物半導体発光素子 １０１…同一成膜基板上に形成された個々の島状窒化物
半導体 １０２…第一のボール部 １０３…ワイヤー １０４…スッテチボンディグ上に形成された第二のボー
ル部 １０５…サファイア基板 ２０１…バッファ層 ２０２…ｎ型コンタクト層 ２０３…多重量子井戸構造とされる活性層 ２０４…ｐ型クラッド層 ２０５…ｐ型コンタクト層 ２０６…透光性電極 ２０７…ｐ型台座電極 ２０８…絶縁性保護膜 ３００…直列接続された本発明の窒化物半導体発光素子 ３０1…同一成膜基板上に形成された個々の島状窒化物
半導体 ３０２…ワイヤーのボール ３０３…ワイヤー ３０４…スッテチボンディグ上に形成されたボール ３０５…サファイア基板 ３０１…並列接続された本発明の窒化物半導体発光素子 ４００…本発明と比較のために示された窒化物半導体発
光素子 ４０１…窒化物半導体層 ４０２…ｎ型電極 ４０３…透光性電極 ４０４…ｐ型電極Reference Signs List 100: nitride semiconductor light emitting device of the present invention 101: individual island-shaped nitride semiconductors formed on the same film forming substrate 102: first ball portion 103: wire 104: second formed on a stitch bond Ball portion 105 sapphire substrate 201 buffer layer 202 n-type contact layer 203 active layer having a multiple quantum well structure 204 p-type cladding layer 205 p-type contact layer 206 translucent electrode 207 p-type Pedestal electrode 208... Insulating protective film 300... Nitride semiconductor light emitting device of the present invention connected in series 301... Individual island-shaped nitride semiconductors formed on the same film-forming substrate 302. Wire balls 303. Ball formed on the stitch bond 305 sapphire substrate 301 parallel connected nitride semiconductor light emitting device of the present invention 400: nitride semiconductor light emitting device shown for comparison with the present invention 401: nitride semiconductor layer 402: n-type electrode 403: translucent electrode 404: p-type electrode

Claims (3)

【特許請求の範囲】[Claims] 【請求項１】 基板上にｐ型及びｎ型に積層された少な
くともＧａを含む窒化物半導体を有する発光素子であっ
て、前記ｐ型及びｎ型に積層された少なくともＧａを含
む窒化物半導体層は同一成膜基板上で電気的に複数分離
してなり、それぞれ分離された個々の窒化物半導体層の
電極を導電性ワイヤで電気的に直列及び／又は並列に接
続されていることを特徴とする窒化物半導体発光素子。1. A light emitting device having a p-type and n-type nitride semiconductor containing at least Ga stacked on a substrate, wherein the p-type and n-type nitride semiconductor layers containing at least Ga are stacked. Is characterized in that a plurality of electrically separated nitride semiconductor layers are electrically connected in series and / or in parallel by conductive wires on the same film-forming substrate. Nitride semiconductor light emitting device. 【請求項２】 前記導電性ワイヤは、それぞれ電気的に
分離された個々の窒化物半導体層の電極をボールボンデ
ィングを用いて順次結線されてなる請求項１に記載の窒
化物半導体発光素子。2. The nitride semiconductor light-emitting device according to claim 1, wherein the conductive wires are formed by sequentially connecting electrodes of respective electrically separated nitride semiconductor layers using ball bonding. 【請求項３】 前記窒化物半導体層の少なくとも一部の
電極は、ステッチボンディングされたワイヤ上に、ボー
ルボンディングされ隣接する窒化物半導体層の電極と電
気的に接続されている請求項１に記載の窒化物半導体発
光素子。3. The electrode according to claim 1, wherein at least a part of the electrode of the nitride semiconductor layer is ball-bonded on the stitch-bonded wire and electrically connected to the electrode of the adjacent nitride semiconductor layer. Nitride semiconductor light emitting device.
JP34003999A 1999-11-30 1999-11-30 Nitride semiconductor light emitting device Expired - Lifetime JP3659098B2 (en)

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Cited By (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006582A (en) * 2002-04-12 2004-01-08 Shiro Sakai Light emitting device
WO2004023568A1 (en) * 2002-08-29 2004-03-18 Nitride Semiconductors Co.,Ltd. Light-emitting device having light-emitting elements
KR100608920B1 (en) 2005-06-30 2006-08-03 서울옵토디바이스주식회사 Wire form of light emitting device, wherein a plurality of light emitting cell is arrayed
WO2007001116A1 (en) * 2005-06-28 2007-01-04 Seoul Opto Device Co., Ltd. Light emitting device for ac power operation
WO2007055468A1 (en) * 2005-11-10 2007-05-18 Seoul Opto Device Co., Ltd. Ac light emitting device having photonic crystal structure and method of fabricating the same
KR100765240B1 (en) 2006-09-30 2007-10-09 서울옵토디바이스주식회사 Light emitting diode package having light emitting cell with different size and light emitting device thereof
WO2007126093A1 (en) 2006-05-01 2007-11-08 Mitsubishi Chemical Corporation Integrated semiconductor light-emitting device and its manufacturing method
WO2007126092A1 (en) 2006-05-01 2007-11-08 Mitsubishi Chemical Corporation Integrated semiconductor light emitting device and method for manufacturing same
JP2008130863A (en) * 2006-11-22 2008-06-05 Nichia Chem Ind Ltd Semiconductor device, and manufacturing method therefore
JP2008529297A (en) * 2005-01-26 2008-07-31 ソウル オプト デバイス カンパニー リミテッド Light emitting device having a plurality of light emitting cells connected in series and method for manufacturing the same
JP2008211255A (en) * 2002-04-12 2008-09-11 Seoul Semiconductor Co Ltd Light-emitting device
EP1973161A2 (en) * 2007-03-19 2008-09-24 Seoul Opto-Device Co., Ltd. Light emitting diode
KR100889008B1 (en) 2005-12-09 2009-03-19 인더스트리얼 테크놀로지 리서치 인스티튜트 AC-LED system in single chip with three metal contacts
JP2010034608A (en) * 2005-06-22 2010-02-12 Seoul Opto Devices Co Ltd Light-emitting element
US7744243B2 (en) 2007-05-08 2010-06-29 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
US7768192B2 (en) 2005-12-21 2010-08-03 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
US7821194B2 (en) 2006-04-18 2010-10-26 Cree, Inc. Solid state lighting devices including light mixtures
US7828460B2 (en) 2006-04-18 2010-11-09 Cree, Inc. Lighting device and lighting method
US7863635B2 (en) 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
US7901107B2 (en) 2007-05-08 2011-03-08 Cree, Inc. Lighting device and lighting method
US7918581B2 (en) 2006-12-07 2011-04-05 Cree, Inc. Lighting device and lighting method
US7967652B2 (en) 2009-02-19 2011-06-28 Cree, Inc. Methods for combining light emitting devices in a package and packages including combined light emitting devices
US7997745B2 (en) 2006-04-20 2011-08-16 Cree, Inc. Lighting device and lighting method
US8018135B2 (en) 2007-10-10 2011-09-13 Cree, Inc. Lighting device and method of making
US8029155B2 (en) 2006-11-07 2011-10-04 Cree, Inc. Lighting device and lighting method
US8038317B2 (en) 2007-05-08 2011-10-18 Cree, Inc. Lighting device and lighting method
US8079729B2 (en) 2007-05-08 2011-12-20 Cree, Inc. Lighting device and lighting method
CN102456781A (en) * 2010-10-21 2012-05-16 旭明光电股份有限公司 Light emitting diode (led) package and method of fabrication
US8333631B2 (en) 2009-02-19 2012-12-18 Cree, Inc. Methods for combining light emitting devices in a package and packages including combined light emitting devices
US8337071B2 (en) 2005-12-21 2012-12-25 Cree, Inc. Lighting device
US8350461B2 (en) 2008-03-28 2013-01-08 Cree, Inc. Apparatus and methods for combining light emitters
EP2562813A2 (en) 2011-08-23 2013-02-27 Stanley Electric Co., Ltd. LED array capable of reducing uneven brightness distribution
EP2565927A2 (en) 2011-09-02 2013-03-06 Stanley Electric Co., Ltd. LED array capable of reducing uneven brightness distribution
JP2013093544A (en) * 2011-10-26 2013-05-16 Fostec Inc Light emitting diode array
US8506114B2 (en) 2007-02-22 2013-08-13 Cree, Inc. Lighting devices, methods of lighting, light filters and methods of filtering light
US8513875B2 (en) 2006-04-18 2013-08-20 Cree, Inc. Lighting device and lighting method
EP2634807A1 (en) 2012-02-29 2013-09-04 Stanley Electric Co., Ltd. Matrice d'élément électroluminescent semi-conducteur
US8556469B2 (en) 2010-12-06 2013-10-15 Cree, Inc. High efficiency total internal reflection optic for solid state lighting luminaires
US8596819B2 (en) 2006-05-31 2013-12-03 Cree, Inc. Lighting device and method of lighting
WO2014025195A1 (en) * 2012-08-07 2014-02-13 서울바이오시스 주식회사 Wafer level light-emitting diode array and method for manufacturing same
WO2014035205A2 (en) * 2012-08-31 2014-03-06 일진엘이디(주) Semiconductor light-emitting element having excellent emission distribution
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US8684559B2 (en) 2010-06-04 2014-04-01 Cree, Inc. Solid state light source emitting warm light with high CRI
WO2014049973A1 (en) * 2012-09-26 2014-04-03 パナソニック株式会社 Light-emitting module
US8896216B2 (en) 2005-06-28 2014-11-25 Seoul Viosys Co., Ltd. Illumination system
US8921876B2 (en) 2009-06-02 2014-12-30 Cree, Inc. Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements
US8998444B2 (en) 2006-04-18 2015-04-07 Cree, Inc. Solid state lighting devices including light mixtures
US9070836B2 (en) 2011-12-16 2015-06-30 Stanley Electric Co., Ltd. Semiconductor light-emitting device
US9084328B2 (en) 2006-12-01 2015-07-14 Cree, Inc. Lighting device and lighting method
US9217553B2 (en) 2007-02-21 2015-12-22 Cree, Inc. LED lighting systems including luminescent layers on remote reflectors
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation
US9318529B2 (en) 2012-09-07 2016-04-19 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
US9391118B2 (en) 2007-01-22 2016-07-12 Cree, Inc. Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
US9441793B2 (en) 2006-12-01 2016-09-13 Cree, Inc. High efficiency lighting device including one or more solid state light emitters, and method of lighting
EP3223313A1 (en) 2007-01-22 2017-09-27 Cree, Inc. Light emitter
JP2018029217A (en) * 2009-10-20 2018-02-22 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ Photoelectric element
US10030824B2 (en) 2007-05-08 2018-07-24 Cree, Inc. Lighting device and lighting method
US10388690B2 (en) 2012-08-07 2019-08-20 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
US10615324B2 (en) 2013-06-14 2020-04-07 Cree Huizhou Solid State Lighting Company Limited Tiny 6 pin side view surface mount LED
US10804316B2 (en) 2012-08-07 2020-10-13 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
JP2021019154A (en) * 2019-07-23 2021-02-15 日亜化学工業株式会社 Light-emitting device
US11251164B2 (en) 2011-02-16 2022-02-15 Creeled, Inc. Multi-layer conversion material for down conversion in solid state lighting

Cited By (149)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4585028B2 (en) * 2002-04-12 2010-11-24 ソウル セミコンダクター カンパニー リミテッド Light emitting device
JP4585014B2 (en) * 2002-04-12 2010-11-24 ソウル セミコンダクター カンパニー リミテッド Light emitting device
JP2009296013A (en) * 2002-04-12 2009-12-17 Seoul Semiconductor Co Ltd Light emitting device
JP2009267423A (en) * 2002-04-12 2009-11-12 Seoul Semiconductor Co Ltd Light-emitting device
JP2009182355A (en) * 2002-04-12 2009-08-13 Seoul Semiconductor Co Ltd Light-emitting device
JP2004006582A (en) * 2002-04-12 2004-01-08 Shiro Sakai Light emitting device
JP2008211255A (en) * 2002-04-12 2008-09-11 Seoul Semiconductor Co Ltd Light-emitting device
EP1892764A1 (en) 2002-08-29 2008-02-27 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting elements
US7956367B2 (en) 2002-08-29 2011-06-07 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting elements connected in series
US8735918B2 (en) 2002-08-29 2014-05-27 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting elements with polygonal shape
US8129729B2 (en) 2002-08-29 2012-03-06 Seoul Semiconductor Co., Ltd. Light emitting device having light emitting elements and an air bridge line
WO2004023568A1 (en) * 2002-08-29 2004-03-18 Nitride Semiconductors Co.,Ltd. Light-emitting device having light-emitting elements
US7417259B2 (en) 2002-08-29 2008-08-26 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting elements
EP2149906A3 (en) * 2002-08-29 2014-05-07 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting diodes
US9947717B2 (en) 2002-08-29 2018-04-17 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting elements and electrode spaced apart from the light emitting element
CN100421266C (en) * 2002-08-29 2008-09-24 首尔半导体股份有限公司 Light-emitting device having light-emitting elements
US8097889B2 (en) 2002-08-29 2012-01-17 Seoul Semiconductor Co., Ltd. Light emitting device having light emitting elements with a shared electrode
US8084774B2 (en) 2002-08-29 2011-12-27 Seoul Semiconductor Co., Ltd. Light emitting device having light emitting elements
EP2154721A3 (en) * 2002-08-29 2014-05-07 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting diodes
US7569861B2 (en) 2002-08-29 2009-08-04 Seoul Semiconductor Co., Ltd. Light emitting device having light emitting elements
US8680533B2 (en) 2002-08-29 2014-03-25 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting elements with a shared electrode
EP2101355A1 (en) 2002-08-29 2009-09-16 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting elements
US7615793B2 (en) 2002-08-29 2009-11-10 Seoul Semiconductor Co., Ltd. AC driven light—emitting device
EP2149905A3 (en) * 2002-08-29 2014-05-07 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting diodes
EP2149907A3 (en) * 2002-08-29 2014-05-07 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting diodes
US7646031B2 (en) 2002-08-29 2010-01-12 Seoul Semiconductor Co., Ltd. Light emitting device having light emitting elements
US8735911B2 (en) 2002-08-29 2014-05-27 Seoul Semiconductor Co., Ltd. Light emitting device having shared electrodes
EP2154721A2 (en) * 2002-08-29 2010-02-17 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting diodes
US7667237B2 (en) 2002-08-29 2010-02-23 Seoul Semiconductor Co., Ltd. Light emitting device having light emitting elements
EP2157609A3 (en) * 2002-08-29 2014-05-07 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting diodes
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US7897982B2 (en) 2002-08-29 2011-03-01 Seoul Semiconductor Co., Ltd. Light emitting device having common N-electrode
US8129848B2 (en) 2005-01-26 2012-03-06 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells connected in series and method of fabricating the same
JP2008529297A (en) * 2005-01-26 2008-07-31 ソウル オプト デバイス カンパニー リミテッド Light emitting device having a plurality of light emitting cells connected in series and method for manufacturing the same
US9627435B2 (en) 2005-06-22 2017-04-18 Seoul Viosys Co., Ltd. Light emitting device
US9209223B2 (en) 2005-06-22 2015-12-08 Seoul Viosys Co., Ltd. Light emitting device and method of manufacturing the same
US8895957B2 (en) 2005-06-22 2014-11-25 Seoul Viosys Co., Ltd Light emitting device and method of manufacturing the same
US8476648B2 (en) 2005-06-22 2013-07-02 Seoul Opto Device Co., Ltd. Light emitting device and method of manufacturing the same
US10340309B2 (en) 2005-06-22 2019-07-02 Seoul Viosys Co., Ltd. Light emitting device
EP2750194A1 (en) * 2005-06-22 2014-07-02 Seoul Viosys Co., Ltd. Light emitting device comprising a plurality of light emitting diode cells
US9929208B2 (en) 2005-06-22 2018-03-27 Seoul Vlosys Co., Ltd. Light emitting device
US7723737B2 (en) 2005-06-22 2010-05-25 Seoul Opto Device Co., Ltd. Light emitting device
US7951626B2 (en) 2005-06-22 2011-05-31 Seoul Opto Device Co., Ltd. Light emitting device and method of manufacturing the same
JP2010034608A (en) * 2005-06-22 2010-02-12 Seoul Opto Devices Co Ltd Light-emitting element
US8704246B2 (en) 2005-06-22 2014-04-22 Seoul Opto Device Co., Ltd. Light emitting device and method of manufacturing the same
US7977691B2 (en) 2005-06-22 2011-07-12 Seoul Opto Device Co., Ltd. Light emitting device and method of manufacturing the same
US9030110B2 (en) 2005-06-28 2015-05-12 Seoul Viosys Co., Ltd. Light emitting device for AC power operation
WO2007001116A1 (en) * 2005-06-28 2007-01-04 Seoul Opto Device Co., Ltd. Light emitting device for ac power operation
US8395332B2 (en) 2005-06-28 2013-03-12 Seoul Opto Device Co., Ltd. Light emitting device for AC power operation
US8896216B2 (en) 2005-06-28 2014-11-25 Seoul Viosys Co., Ltd. Illumination system
US8866417B2 (en) 2005-06-28 2014-10-21 Seoul Viosys Co., Ltd. Light emitting device for AC power operation
US10292220B2 (en) 2005-06-28 2019-05-14 Seoul Viosys Co., Ltd. Light emitting device for AC power operation
US8716946B2 (en) 2005-06-28 2014-05-06 Seoul Opto Device Co., Ltd. Light emitting device for AC power operation
US8188687B2 (en) 2005-06-28 2012-05-29 Seoul Opto Device Co., Ltd. Light emitting device for AC power operation
US8860331B2 (en) 2005-06-28 2014-10-14 Seoul Viosys Co., Ltd. Light emitting device for AC power operation
KR100608920B1 (en) 2005-06-30 2006-08-03 서울옵토디바이스주식회사 Wire form of light emitting device, wherein a plurality of light emitting cell is arrayed
JP2009516370A (en) * 2005-11-10 2009-04-16 ソウル オプト デバイス カンパニー リミテッド AC driven light emitting device having photonic crystal structure and method for manufacturing the same
US7901964B2 (en) 2005-11-10 2011-03-08 Seoul Opto Device Co., Ltd. Method of fabricating AC light emitting device having photonic crystal structure
WO2007055468A1 (en) * 2005-11-10 2007-05-18 Seoul Opto Device Co., Ltd. Ac light emitting device having photonic crystal structure and method of fabricating the same
US8716727B2 (en) 2005-11-10 2014-05-06 Seoul Opto Device Co., Ltd. Ac light emitting device having photonic crystal structure and method of fabricating the same
KR100889008B1 (en) 2005-12-09 2009-03-19 인더스트리얼 테크놀로지 리서치 인스티튜트 AC-LED system in single chip with three metal contacts
US7768192B2 (en) 2005-12-21 2010-08-03 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
US8878429B2 (en) 2005-12-21 2014-11-04 Cree, Inc. Lighting device and lighting method
US8337071B2 (en) 2005-12-21 2012-12-25 Cree, Inc. Lighting device
US8998444B2 (en) 2006-04-18 2015-04-07 Cree, Inc. Solid state lighting devices including light mixtures
US8123376B2 (en) 2006-04-18 2012-02-28 Cree, Inc. Lighting device and lighting method
US7828460B2 (en) 2006-04-18 2010-11-09 Cree, Inc. Lighting device and lighting method
US7821194B2 (en) 2006-04-18 2010-10-26 Cree, Inc. Solid state lighting devices including light mixtures
US10018346B2 (en) 2006-04-18 2018-07-10 Cree, Inc. Lighting device and lighting method
US8212466B2 (en) 2006-04-18 2012-07-03 Cree, Inc. Solid state lighting devices including light mixtures
US9417478B2 (en) 2006-04-18 2016-08-16 Cree, Inc. Lighting device and lighting method
US9297503B2 (en) 2006-04-18 2016-03-29 Cree, Inc. Lighting device and lighting method
US8513875B2 (en) 2006-04-18 2013-08-20 Cree, Inc. Lighting device and lighting method
US8733968B2 (en) 2006-04-18 2014-05-27 Cree, Inc. Lighting device and lighting method
US7997745B2 (en) 2006-04-20 2011-08-16 Cree, Inc. Lighting device and lighting method
US8581274B2 (en) 2006-05-01 2013-11-12 Mitsubishi Chemical Corporation Integrated semiconductor light-emitting device and its manufacturing method
WO2007126092A1 (en) 2006-05-01 2007-11-08 Mitsubishi Chemical Corporation Integrated semiconductor light emitting device and method for manufacturing same
WO2007126093A1 (en) 2006-05-01 2007-11-08 Mitsubishi Chemical Corporation Integrated semiconductor light-emitting device and its manufacturing method
US8596819B2 (en) 2006-05-31 2013-12-03 Cree, Inc. Lighting device and method of lighting
US8628214B2 (en) 2006-05-31 2014-01-14 Cree, Inc. Lighting device and lighting method
KR100765240B1 (en) 2006-09-30 2007-10-09 서울옵토디바이스주식회사 Light emitting diode package having light emitting cell with different size and light emitting device thereof
WO2008038918A1 (en) * 2006-09-30 2008-04-03 Seoul Opto Device Co., Ltd. Light emitting diode having light emitting cell with different size and light emitting device thereof
US8274089B2 (en) 2006-09-30 2012-09-25 Seoul Opto Device Co., Ltd. Light emitting diode having light emitting cell with different size and light emitting device thereof
US8299476B2 (en) 2006-09-30 2012-10-30 Seoul Opto Device Co., Ltd. Light emitting diode having light emitting cell with different size and light emitting device thereof
US8029155B2 (en) 2006-11-07 2011-10-04 Cree, Inc. Lighting device and lighting method
US8382318B2 (en) 2006-11-07 2013-02-26 Cree, Inc. Lighting device and lighting method
JP2008130863A (en) * 2006-11-22 2008-06-05 Nichia Chem Ind Ltd Semiconductor device, and manufacturing method therefore
US9084328B2 (en) 2006-12-01 2015-07-14 Cree, Inc. Lighting device and lighting method
US9441793B2 (en) 2006-12-01 2016-09-13 Cree, Inc. High efficiency lighting device including one or more solid state light emitters, and method of lighting
US7918581B2 (en) 2006-12-07 2011-04-05 Cree, Inc. Lighting device and lighting method
EP3848970A1 (en) 2007-01-22 2021-07-14 Cree, Inc. Multiple light emitting diode emitter
US10586787B2 (en) 2007-01-22 2020-03-10 Cree, Inc. Illumination devices using externally interconnected arrays of light emitting devices, and methods of fabricating same
EP3223313A1 (en) 2007-01-22 2017-09-27 Cree, Inc. Light emitter
US10157898B2 (en) 2007-01-22 2018-12-18 Cree, Inc. Illumination devices, and methods of fabricating same
US9391118B2 (en) 2007-01-22 2016-07-12 Cree, Inc. Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters
US9217553B2 (en) 2007-02-21 2015-12-22 Cree, Inc. LED lighting systems including luminescent layers on remote reflectors
US8506114B2 (en) 2007-02-22 2013-08-13 Cree, Inc. Lighting devices, methods of lighting, light filters and methods of filtering light
US8896011B2 (en) 2007-03-19 2014-11-25 Seoul Viosys Co., Ltd. Light emitting diode
KR100974923B1 (en) * 2007-03-19 2010-08-10 서울옵토디바이스주식회사 Light emitting diode
US9461091B2 (en) 2007-03-19 2016-10-04 Seoul Viosys Co., Ltd. Light emitting diode
JP2008235894A (en) * 2007-03-19 2008-10-02 Seoul Opto Devices Co Ltd Light emitting diode of ac drive type
EP1973161A2 (en) * 2007-03-19 2008-09-24 Seoul Opto-Device Co., Ltd. Light emitting diode
US7744243B2 (en) 2007-05-08 2010-06-29 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
US7901107B2 (en) 2007-05-08 2011-03-08 Cree, Inc. Lighting device and lighting method
US10030824B2 (en) 2007-05-08 2018-07-24 Cree, Inc. Lighting device and lighting method
US8079729B2 (en) 2007-05-08 2011-12-20 Cree, Inc. Lighting device and lighting method
US8038317B2 (en) 2007-05-08 2011-10-18 Cree, Inc. Lighting device and lighting method
US7863635B2 (en) 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
US9054282B2 (en) 2007-08-07 2015-06-09 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials and methods for forming the same
US8018135B2 (en) 2007-10-10 2011-09-13 Cree, Inc. Lighting device and method of making
US8350461B2 (en) 2008-03-28 2013-01-08 Cree, Inc. Apparatus and methods for combining light emitters
US8513871B2 (en) 2008-03-28 2013-08-20 Cree, Inc. Apparatus and methods for combining light emitters
US7967652B2 (en) 2009-02-19 2011-06-28 Cree, Inc. Methods for combining light emitting devices in a package and packages including combined light emitting devices
US8333631B2 (en) 2009-02-19 2012-12-18 Cree, Inc. Methods for combining light emitting devices in a package and packages including combined light emitting devices
US8921876B2 (en) 2009-06-02 2014-12-30 Cree, Inc. Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements
JP2018029217A (en) * 2009-10-20 2018-02-22 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ Photoelectric element
US10665756B2 (en) 2009-10-20 2020-05-26 Epistar Corporation Optoelectronic device
US10418524B2 (en) 2009-10-20 2019-09-17 Epistar Corporation Optoelectronic device
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation
US8684559B2 (en) 2010-06-04 2014-04-01 Cree, Inc. Solid state light source emitting warm light with high CRI
US9599291B2 (en) 2010-06-04 2017-03-21 Cree, Inc. Solid state light source emitting warm light with high CRI
CN102456781A (en) * 2010-10-21 2012-05-16 旭明光电股份有限公司 Light emitting diode (led) package and method of fabrication
US8556469B2 (en) 2010-12-06 2013-10-15 Cree, Inc. High efficiency total internal reflection optic for solid state lighting luminaires
US11251164B2 (en) 2011-02-16 2022-02-15 Creeled, Inc. Multi-layer conversion material for down conversion in solid state lighting
EP2562813A2 (en) 2011-08-23 2013-02-27 Stanley Electric Co., Ltd. LED array capable of reducing uneven brightness distribution
EP2565927A2 (en) 2011-09-02 2013-03-06 Stanley Electric Co., Ltd. LED array capable of reducing uneven brightness distribution
US8937323B2 (en) 2011-09-02 2015-01-20 Stanley Electric Co., Ltd. LED array capable of reducing uneven brightness distribution
JP2013093544A (en) * 2011-10-26 2013-05-16 Fostec Inc Light emitting diode array
US9070836B2 (en) 2011-12-16 2015-06-30 Stanley Electric Co., Ltd. Semiconductor light-emitting device
EP2634807A1 (en) 2012-02-29 2013-09-04 Stanley Electric Co., Ltd. Matrice d'élément électroluminescent semi-conducteur
US9035332B2 (en) 2012-02-29 2015-05-19 Stanley Electric Co., Ltd. Semiconductor light emitting element array
US9318530B2 (en) 2012-08-07 2016-04-19 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array and method for manufacturing same
US11587972B2 (en) 2012-08-07 2023-02-21 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
US11139338B2 (en) * 2012-08-07 2021-10-05 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
WO2014025195A1 (en) * 2012-08-07 2014-02-13 서울바이오시스 주식회사 Wafer level light-emitting diode array and method for manufacturing same
US10388690B2 (en) 2012-08-07 2019-08-20 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
US10804316B2 (en) 2012-08-07 2020-10-13 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
WO2014035205A3 (en) * 2012-08-31 2014-05-08 일진엘이디(주) Semiconductor light-emitting element having excellent emission distribution
WO2014035205A2 (en) * 2012-08-31 2014-03-06 일진엘이디(주) Semiconductor light-emitting element having excellent emission distribution
WO2014038794A1 (en) * 2012-09-07 2014-03-13 서울바이오시스 주식회사 Wafer level light-emitting diode array
US9318529B2 (en) 2012-09-07 2016-04-19 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
US9412922B2 (en) 2012-09-07 2016-08-09 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
US9634211B2 (en) 2012-09-26 2017-04-25 Panasonic Intellectual Property Management Co., Ltd. Light-emitting module
WO2014049973A1 (en) * 2012-09-26 2014-04-03 パナソニック株式会社 Light-emitting module
JPWO2014049973A1 (en) * 2012-09-26 2016-08-22 パナソニックＩｐマネジメント株式会社 Light emitting module
US10615324B2 (en) 2013-06-14 2020-04-07 Cree Huizhou Solid State Lighting Company Limited Tiny 6 pin side view surface mount LED
JP2021019154A (en) * 2019-07-23 2021-02-15 日亜化学工業株式会社 Light-emitting device
JP7011185B2 (en) 2019-07-23 2022-01-26 日亜化学工業株式会社 Luminescent device

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