TWI270862B - Contact probe storage device including conductive readout medium - Google Patents
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- TWI270862B TWI270862B TW092117826A TW92117826A TWI270862B TW I270862 B TWI270862 B TW I270862B TW 092117826 A TW092117826 A TW 092117826A TW 92117826 A TW92117826 A TW 92117826A TW I270862 B TWI270862 B TW I270862B
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- G—PHYSICS
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- G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
- G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
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Description
1270862 玫、發明說明: 【潑^明所屬^技糊^領】 發明領域 數十年來,研究人員不斷致力於資料儲存裝置如磁式 5硬碟、光碟機及半導體隨機存取記憶體之儲存密度的增加 與儲存成本的降低。然而,增加儲存密度變的越來越困難 ,因為習知的技術似乎已經逼近儲存密度的基本極限了。 比方說,以傳統磁性紀錄方式作成之資料儲存正迅速逼近 基本的物理限制,如超磁極限,若低於該極限磁位元在室 10 溫下會呈現不穩定。 發明背景 15 不會面臨這些基本極限的儲存裝置正在研究當中。此 種資訊儲存裝置關子之-為Chc)i等人所中請^國專利 公告第2002/0066855 A1號(下稱“公告”根據該公告,一 資料紀錄與讀取裝置包含一接觸探針和一儲存媒體。在一 實施例中’該儲存媒體包含-基板、—位在該基板上之導 電層’以及-位在該導電層上之介電層。該探針藉由在該 介電層上形成鑽孔之方式將資料記錄於該儲存媒體上。今 鑽孔將該導電層之表面暴露出來。讀取時,該探針: 存媒體上被掃描。當該探針的針尖遇到鑽孔,,小= 入該鑽孔,使該採針針尖與該導電層之間產生 < 路 該公告承認,該探針針尖的磨損為該第題 所在。磨損可能在讀寫動作中,在_針針料觸該導電 20 1270862 層時發生。此一磨損使該針尖磨耗。而磨耗則可能縮短該 儲存裝置的壽命。 該公告揭示一第2實施例,其中該儲存媒體是由一基板 以及一位在該基板上之導電聚合層構成的。資料藉由在該 5 導電聚合層中形成鑽孔之方式被紀錄。該資料經由使該探 針在該導電聚合層上掃描之方式被讀取。當該探針穿過該 導電聚合層時,該針尖和該導電聚合層之間應該會產生短 路;而該針尖穿過鑽孔時則不應該發生短路現象。該公告 宣稱該第2實施例可以減少該針尖的磨損並具有更快的資 10 料讀取速度。 【發明内容】 發明概要 從本發明一角度來看,一資料儲存裝置包含一儲存媒 體和一接觸探針。該儲存媒體包含一第1聚合層,以及一位 15 在該第1聚合層上之第2聚合層。該第1聚合層可導電。該接 觸探針面對該第2聚合層。 本發明之其他角度與優點將從下列參考隨附之例示本 發明原理的圖示作成之詳細說明突顯出來。 圖式簡單說明 20 第1圖例示根據本發明之第1實施例作成的資料儲存裝 置。 第2圖例示根據本發明之第2實施例作成的資料儲存裝 置。 t實施方式3 6 1270862 較佳實施例之詳細說明 參考第1圖’一資料儲存裝置⑽包含-接觸探針陣列 以及一儲存媒體114。該儲存媒體m包含—基板116、 二Γ基板116上之底部聚合層118,以及-位在該底部 聚合層118上之頂部聚合層12〇。 該接觸探針112面對該頂部聚合層12〇。為求簡 中僅顯示-支聰針112;實際上,_列可包含多數㈣ 接觸探針112。崎針112可以相對於贿存制m地固定z 10 15 不動’或者在讀寫作業中於該儲存媒體114上被掃描。典型 的接觸板針112包括,但不限於,Spin崎尖、料尖 及奈米碳管。其他具代錄的接_針_,以及在 存媒體114上掃描該陣列之機制揭露於美國專利第 5,835,477號中。 弟 該頂部聚合層12〇為—資料記錄層。該頂部聚合層⑶ 係由-允許該接觸探針112在該頂部聚合層120中做拓撲變 化之材料作成的。#_化_子包括使該底部聚合 外露之内縮及貫孔。第i圖例示一内縮型拓樸變化;貫曰 拓樸變化未予顯示。 t 拓樸變化的型式部分取決於該第2層12()的導電性 如該第2層闕-介電f(亦即非傳導性物質),該扣撲變^ 可以是貫孔型。如果該貫孔之開口的擦找與該底部聚〜 118之潮《衝突,該貫孔可能無法_。然而,二 探針m選擇適當的材料並施加適當的壓力,擦拭性是= 達成的。 20 Ϊ270862 如果該第2層120具有部分的導電性,該拓樸變化可以 是凹件122。假使該頂部聚合層120是由攙雜導電材料並具 有適當之動力黏度及表面張力的材料,如聚甲基丙烯酸甲 酯(PMMA)作成,則該凹件122可以為可擦拭型。該頂部聚 5 合層120之阻力會被該凹件122之深度調節。 該底部聚合層118執行多項功能:它是抗磨損層;卩且止 拓樸變化在該頂部聚合層120中延伸之防守層;以及將電流 從該底部聚合層118轉送至一讀取電路124之導電層。由於 該底部層118為聚合物,它可以減少該接觸探針112之磨損 10 。該底部聚合層118可以以一比該頂部聚合層120之材料具 有較而玻璃轉移溫度的材料作成,以便阻斷該拓樸變化之 延伸。 該底部聚合層118可以由導電聚合物作成,如有機發光 二極體所使用之聚合物。選擇性地,該底部聚合層可以以 15 一促成導電材料之聚合物組合式作成。舉例來說, P〇ly(3?4-ethyleneoxythiophene) (PEDT)可以攙雜 P〇ly(StyreneSulf〇nate)(PSS)。另外,該底部聚合層 118可以 由一攙雜導電材料之熱固樹脂作成。 該基板116不限於任何特定材料。典型的材料包括玻璃 20 、金屬及半導體。 讀取時,該接觸探針112之該針尖與該頂部聚合層12〇 之表面接觸,並在該頂部聚合層12〇之表面移動。當該探針 落入一凹間或貫孔中時,該頂部聚合層12〇之阻力會改變。 連接於該接觸探針112和該底部聚合層118之間的該讀取電 8 1270862 路124可以測量該頂部聚合層12〇之阻力的調幅。 現在參考第2圖,其中例示一第2資料儲存裝置21〇。該 第2資料儲存裝置21〇可以具有和該第丨資料儲存裝置ιι〇相 同之探針陣列及頂部聚合層。然而,該第^資料儲存裝 5置210之基板216的作用為導電層。該基板216將電流從底部 聚合層218轉送至该讀取電路124。該底部聚合層^18被作為 抗磨損層及防守層,但不是導電層。該底部聚合層川應該 八有足以將電流從該防守層轉送至該基板216之導電性。然 =,該第2資料儲存裝置210之該底部聚合層218在比該扪 資料儲存n10之該底部聚合層lls為短的距離内轉送電 Μ ’因此,该第2資料儲存裝置210之該底部聚合層的阻 力可能比該第1資料儲存裝置11〇之該底部聚合層118的阻
力大上好幾倍。該底«合層218可以由聚合物,如PEDT 作成但所含的PSS要少得多。該讀取電路HA連接於該接 觸探針II2和该基板110之間,以測量該頂部聚合層⑽之阻 力的調幅。 以上揭露者為接觸探針儲存裝置110、210,包括可以 降低該接觸探針112之磨損的儲存媒體114、214。此等儲存 媒體m、214可以延長其資料儲存裝置110、210之壽命, :、/接觸彳木針112可以以較為柔軟之材料,如鉑銥和鎢作 成。 、雖以本發明之特定實施例已說明並例示如上,本發明 =不限於所說日肢齡之特定零件型式或㈣。相反地, 本發明應根據以下中請專·圍加以_其範圍。 1270862 【圖式簡單說明】 第1圖例示根據本發明之第1實施例作成的資料儲存裝 置。 第2圖例示根據本發明之第2實施例作成的資料儲存裝 5 置。 【圖式之主要元件代表符號表】 110.210.. .資料儲存裝置 120…頂部聚合層 122…凹件 124.··讀取電路 112.. .接觸探針陣列 114,214…儲存媒體 116.216.. .基板 118,218…底部聚合層
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Claims (1)
1270862 拾、申請專利範圍: 1. 一種資料儲存裝置(110、210),包含: 一儲存媒體(114、214),該儲存媒體包含一第1聚合 層(118、218),以及一位在該第1聚合層(118、218)上之 5 第2聚合層(120),該第1聚合層(118、218)可導電;以及 一接觸探針(112),該接觸探針面對該第2聚合層 (120)。 2. 如申請專利範圍第1項之裝置(110、210),其中,該接觸 探針(112)於寫入作業時在該第2聚合層(120)中產生拓 10 樸變化。 3. 如申請專利範圍第2項之裝置(110、210),其中,該第2 聚合層(120)可導電;且其中,該拓樸變化包括位在該第 2聚合層(120)中之凹件,該凹件不延伸至該第1聚合層 (118 、 218)。 15 4.如申請專利範圍第2項之裝置(110、210),其中,該第2 聚合層(120)不可導電;且其中,該拓樸變化包括位在該 第2聚合層(120)中之貫孔。 5. 如申請專利範圍第1項之裝置(110、210),其中,該第1 聚合層(118、218)比該第2聚合層(120)具有較高的玻璃 20 轉移溫度。 6. 如申請專利範圍第1項之裝置(110),其中,該第1聚合層 (118)之作用為導電層。 7. 如申請專利範圍第6項之裝置(110),進一步包含一電路 (124),該電路連接於該探針(112)和該第1聚合層(118) 11 1270862 之間,以測量該第2聚合層(120)之阻力的調幅。 8.如申請專利範圍第1項之裝置(210),進一步包含一用以 支撐該第1聚合層(218)之基板(216),該基板(216)之導電 性比該第1聚合層(218)之導電性大上好幾倍。 5 9.如申請專利範圍第8項之裝置(210),進一步包含一電路 (124),該電路連接於該探針(112)和該基板(216)之間, 以測量該第2聚合層(120)之阻力的調幅。
Applications Claiming Priority (1)
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US10/322,173 US6944114B2 (en) | 2002-12-17 | 2002-12-17 | Contact probe storage device including conductive readout medium |
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TW200411636A TW200411636A (en) | 2004-07-01 |
TWI270862B true TWI270862B (en) | 2007-01-11 |
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US (1) | US6944114B2 (zh) |
EP (1) | EP1431970A3 (zh) |
JP (1) | JP4130403B2 (zh) |
KR (1) | KR20040055616A (zh) |
CN (1) | CN100517479C (zh) |
TW (1) | TWI270862B (zh) |
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US6017618A (en) * | 1997-10-29 | 2000-01-25 | International Business Machines Corporation | Ultra high density storage media and method thereof |
EP0923072B1 (en) * | 1997-12-09 | 2002-06-12 | Agfa-Gevaert | Heat mode recording material based on a thin metal layer |
KR100389903B1 (ko) | 2000-12-01 | 2003-07-04 | 삼성전자주식회사 | 접촉 저항 측정을 이용한 정보 저장 장치 및 그 기록과재생 방법 |
-
2002
- 2002-12-17 US US10/322,173 patent/US6944114B2/en not_active Expired - Fee Related
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2003
- 2003-06-30 TW TW092117826A patent/TWI270862B/zh not_active IP Right Cessation
- 2003-12-15 JP JP2003416567A patent/JP4130403B2/ja not_active Expired - Fee Related
- 2003-12-16 KR KR1020030091748A patent/KR20040055616A/ko not_active Application Discontinuation
- 2003-12-16 EP EP03257917A patent/EP1431970A3/en not_active Withdrawn
- 2003-12-17 CN CNB2003101209779A patent/CN100517479C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2004199858A (ja) | 2004-07-15 |
EP1431970A2 (en) | 2004-06-23 |
JP4130403B2 (ja) | 2008-08-06 |
KR20040055616A (ko) | 2004-06-26 |
US20040113641A1 (en) | 2004-06-17 |
EP1431970A3 (en) | 2005-12-28 |
US6944114B2 (en) | 2005-09-13 |
CN100517479C (zh) | 2009-07-22 |
TW200411636A (en) | 2004-07-01 |
CN1549260A (zh) | 2004-11-24 |
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