CN100517479C - 包括导电的读出介质的接触探针储存器件 - Google Patents

包括导电的读出介质的接触探针储存器件 Download PDF

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CN100517479C
CN100517479C CNB2003101209779A CN200310120977A CN100517479C CN 100517479 C CN100517479 C CN 100517479C CN B2003101209779 A CNB2003101209779 A CN B2003101209779A CN 200310120977 A CN200310120977 A CN 200310120977A CN 100517479 C CN100517479 C CN 100517479C
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H·比雷基
R·G·瓦尔姆斯利
S·L·纳伯惠斯
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Abstract

一种数据储存器件(110，210)包括储存介质(114，214)和接触探针(112)。该储存介质(114，214)包括第一聚合层(118，218)，和在该第一聚合层(118，218)上的第二聚合层(120)，该第一聚合层(118，218)是导电的。接触探针(112)面对该第二聚合层(120)。

Description

包括导电的读出介质的接触探针储存器件
技术领域
本发明涉及一种数据储存器件，特别涉及包括储存介质和接触探针的数据储存器件。
背景技术
为增加例如磁硬器件，光器件，和半导体随机存取存储器这样的数据储存器件的储存密度和降低储存成本，研究已进行了数十年。但是增加储存密度的困难还在增加，这是因为普通技术看起来似乎接近储存密度的基本极限。例如，基于普通磁记录的数据储存正快速接近例如超顺磁性极限的基本物理极限，在常温下低于该极限磁位是不稳定的。
正在研究不面对这些基本极限的储存器件。在choi等美国专利申请公布号2002/0066855A1(“公布”)中描述了这样一种信息储存器件的例子。按照该公布，一种用于记录和读数据的设备包括一个接触探针和一种储存介质。在一实施例中，该储存介质由一基片，在该基片上的一导电层，以及在该导电层上的一电介质层形成。探针通过在该电介质中形成孔在该储存介质中记录数据。这些孔暴露该导电层的表面。在读操作期间，该探针横跨该储存介质扫掠。当该探针的末端遭遇到一个孔时，其末端落入到孔中，同时在该探针末端和导电层之间发生短路。
该公布确认在第一实施例情况下探针末端的擦伤是个问题。当探针末端同导电层进行接触时，在读和写操作期间能发生擦伤。该擦伤将引起末端磨损。而磨损缩短该储存器件的寿命。
该公布描述了第二个实施例，其中储存介质是由一基片和在该基片上的一导电的聚合层形成。数据通过在该导电聚合层中形成的孔进行记录。通过扫掠探针读出的数据横跨该导电聚合层扫掠。当探针通过导电聚合层时意味着末端和导电聚合层之间短路发生；而当该末端通过一个孔时并不意味着短路发生。该公布要求的权利是第二实施例降低了末端的擦伤并且有高的读数据速度。
发明概述
按照本发明的一个方面，一种数据储存器件包括储存介质和接触探针。该储存介质包括一第一聚合层，和在该第一聚合层上的一第二聚合层，该第一聚合层是导电的。该接触探针面对该第二聚合层，根据通过例子说明本发明原理的下列详细说明书并结合附图将明白本发明的其他方面和优点。
附图说明
图1是按本发明第一实施例的一种数据储存器件的说明。
图2是按本发明第二实施例的一种数据储存器件的说明。
具体实施方式
参照图1，一个数据储存器件110包括接触探针112的阵列和储存介质114。该储存介质114包括一个基片116，在基片116上的底部聚合层118，和在第一聚合层118上的上部聚合层120。
接触探针112面对上部聚合层120。为简化说明只表示出单个接触探针112；实际上，这种阵列可包括多个接触探针112。在读和写操作期间，探针112可静止地相对于储存介质114，或可横跨该储存介质114扫掠。示例性接触探针112包括但非限于Spindt末端，硅末端，和碳毫微管(nanotube)。在U.S.5,835,477描述了其他示例性接触探针阵列，以及用于横跨该储存介质114扫掠该阵列的机构。
上部聚合层120起数据记录层作用。上部聚合层120由允许接触探针112在该上部聚合层120中进行拓扑学改变(topologicalchange)的材料制作。拓扑学改变例子包括刻痕，和暴露底部聚合层118的通孔。图1中说明一种刻痕或拓扑学改变；但未说明通孔式拓扑学改变。
拓扑学改变型式部分地依赖于第二层120的导电性。如果第二层是介质(即，非导电性的)，则拓扑学改变可以是通孔。只要在孔打开容易和加湿底部聚合层118之间存在抵触，则通孔可以是可不擦除的。但是，在适当选择材料和适当的压力应用到探针112的情况下，能够得到可擦除性。
如果第二层120是部分导电的，则拓扑学改变可以是刻痕122。刻痕122是可擦除的，只要上部聚合层120是由例如聚(异丁烯酸甲酯)(PMMA)材料制成，这种材料由一种导电材料掺杂并具有适当的动态粘性和表面张力。该上部聚合层120的电阻由刻痕122的深度调整。
底部聚合层118起某些功能：起抗磨损层功能；起衬里层的功能，即堵塞拓扑学改变在上部聚合层120中传播；起导电层作用，即将电流从底部聚合层118运载到一个读出电路124。由于底部层118是聚合物，所以它减小对接触探针112的磨损。底部聚合层118也可由一种材料制成，这种材料比上部聚合层120的材料具有更高的玻璃过渡温度(glass transition temperature)，由此堵塞了该拓扑学改变的传播。
底部聚合层118可由例如用于有机LED的聚合物的导电性聚合物制成。另外该底部聚合层也可由一种聚合物组合制成，这种组合物将导致一种导电性的材料。例如，聚(3，4-亚乙基氧基噻吩)(PEDT)可用聚(苯乙烯磺酸盐)(PSS)掺杂。如其他例子，底部聚合层118可由用一种导电材料掺杂的热固制成。
基片116不限于任何特定材料。用于基片的示例性材料包括玻璃，金属和半导体。
在读操作期间，接触探针112的末端同上部聚合层120的表面接触并横跨该上部聚合层120表面移动。当探针落入一个刻痕或通孔时，该上部聚合层120的电阻改变。连接在探针112和底部聚合层118之间的读电路124可测量上部聚合层120的电阻率的调整。
现参照图2，它说明第二数据储存器件210。如第一数据储存器件110那样，第二数据储存器件210也具有相同的探针阵列和上部聚合层120。但是，第二数据储存器件210的基片216起导电层作用。基片216将电流从底部聚合层218运载到读电路124。底部聚合层218起抗磨损层和衬里层作用，但不起导电层作用。底部聚合层218应具有足以将电流从该衬里层运载到基片216的导电性。但是，第二数据储存器件210的底部聚合层218比第一数据储存器件110的底部聚合层118运载电流的距离更短；因此，第二数据储存器件210的底部聚合层218的电阻率比第一数据储存器件110的底部聚合层118的电阻率大几个数量级。底部聚合层218可由例如PEDT这样的聚合物制成，但很少用PSS。读电路124连接在探针112和基片216之间，以测量上部聚合层120的电阻率的调整。
这样公开了包括减小接触探针112磨损的储存介质114和214的接触探针储存器件110和210。这种储存介质114和214将延长它们的数据储存器件110和210的寿命，同时允许接触探针由例如铂-铱和钨这样的软材料制成。
虽然已描述和说明了本发明的特定实施例，但本发明不限于部件的如此描述和说明的特定形式或配置。相反，本发明限于按以下的权利要求。

Claims (5)

1.一种数据储存器件(110，210)包括：
储存介质(114，214)包括第一聚合层(118，218)，和在该第一聚合层(118，218)上的第二聚合层(120)，第一聚合层(118，218)是导电的；
接触探针(112)面对第二聚合层(120)；
一个基片(216)，用于支持第一聚合层(218)，该基片(216)起导电层作用，而该第一聚合层(218)不起导电层作用；以及
一个读电路(124)，连接在探针(112)和基片(216)之间，用于测量第二聚合层(120)的电阻率调整。
2.权利要求1的器件(110，210)，其中在写操作期间接触探针(112)在第二聚合层(120)中产生拓扑学改变。
3.权利要求2的器件(110，210)，其中第二聚合层(120)是导电的；和其中拓扑学改变包括在第二聚合层(120)中的刻痕，该刻痕不延长到第一聚合层(118，218)。
4.权利要求2的器件(110，210)，其中第二聚合层(120)是不导电的；和其中拓扑学改变包括在第二聚合层(120)中的通孔。
5.权利要求1的器件(110，210)，其中第一聚合层(118，218)具有比第二聚合层(120)更高的玻璃过渡温度。
CNB2003101209779A 2002-12-17 2003-12-17 包括导电的读出介质的接触探针储存器件 Expired - Fee Related CN100517479C (zh)

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US10/322,173 US6944114B2 (en) 2002-12-17 2002-12-17 Contact probe storage device including conductive readout medium

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CN1549260A (zh) 2004-11-24

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