TWI259551B - Manufacturing method of thin-layer substrate, thin-layer substrate transfer device, and thin-layer substrate transfer absorption pad - Google Patents

Manufacturing method of thin-layer substrate, thin-layer substrate transfer device, and thin-layer substrate transfer absorption pad Download PDF

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TWI259551B
TWI259551B TW092101503A TW92101503A TWI259551B TW I259551 B TWI259551 B TW I259551B TW 092101503 A TW092101503 A TW 092101503A TW 92101503 A TW92101503 A TW 92101503A TW I259551 B TWI259551 B TW I259551B
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Taiwan
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thin
side wall
layer substrate
substrate transfer
substrate
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TW092101503A
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Chinese (zh)
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TW200402119A (en
Inventor
Hideki Tanaka
Bao-Jen Ann
Hou-Yan Shiau
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Espec Corp
Chunghwa Picture Tubes Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

An absorption pad 71 for absorbing a glass substrate is constituted by a cylindrical member having a circular sidewall portion 711 and a bottom wall portion. The bottom wall portion 712 is provided with an absorbing aperture 713 at the central portion thereof, and the sidewall portion 711 is tapered toward the tip end. The sidewall portion 711 includes a small diameter base-side wall 714 located at the absorbing aperture side, a large diameter tip-side wall 715 located at the tip end side and a connecting portion 716 connecting the base-side wall to the tip-side wall. The radial dimension (thickness) of the tip end surface of the tip-side wall 715 is 0.2 mm. This can suppress the heat transfer amount from the pad to the glass substrate.

Description

1259551 (1) 玖、發明說明 【發明所屬之技術領域】 薄層基板製造方 吸附墊片。 組的技術。液晶 個畫素，或形成 薄膜電晶體的製 對其上面的感光 圖案的光罩的曝 成所要數量的陣 配設以高溫進行 處理後的基板移 。基板移載裝置 璃基板的手部。 的玻璃基板的環 墊片上，而向下 時候，例如一旦 的吸附墊片，吸 部性溫度下降。 板的表（正面）面 本發明是有關玻璃基板等薄層基板之 法、薄層基板移載裝置及薄層基板移載用 【先前技術】 據知習知是利用玻璃基板製造液晶模 模組是在玻璃基板上形成構成畫面的多數 顯示動作用的薄膜電晶體而製造。例如在 造工程，玻璃基板之導電材的塗佈工程、 材的光阻劑的塗佈工程、使用各層的電路 光工程、顯影工程、蝕刻工程是重複到形 列爲止。然後在該些各工程間配合需要而 烘乾處理的處理室。在處理室間設置欲將 送的下一個工程的處理室的基板移載裝置 係在可轉動及伸縮的支臂前端設有載置玻 在該手部以所要數量配設具有吸附所載置 狀側壁的吸附墊片。 可是，玻璃基板是被載置吸引在吸附 一個工程被移送，但前工程在烘乾處理的 加熱到200 °C以上的基板下面接觸到常溫 附墊片的冷熱傳熱到玻璃基板就會產生局 一旦在該局部性的溫度下降影響到玻璃基 側，就會招來局部性（接觸部分）接著性能降低，於顯影後 (2) 1259551 的蝕刻中，在其邊界部分的陣列各層間會產生接著不良， 亦即會有發生捲曲（翻開）的所謂熱成像的情形。特別是在 具有玻璃基板薄層化要件的今日，也出現零點幾毫米厚的 基板，冷熱會因該薄層化而變得更易於傳導到表面側，使 熱成像的問題更明顯化，反而有導致良品率更惡化的可能 性。 而被載置吸引在吸附墊片的環狀側壁上端部的玻璃基 板，會因側壁圓空間的負壓而發生凹陷，還會沿著側壁發 生環狀彎曲部，但也認爲該彎曲部的機械性變形及熱膨張 、收縮作用地更易發生前述熱成像的可能性。 【發明內容】 本發明是有鑑於相關事項的發明，目的在於提供一儘 可能減小薄層基板於吸引移送時的接觸面積以抑制發生熱 成像的薄層基板製造方法，薄層基板移載裝置及薄層基板 移載用吸附墊片。 申請專利範圍第1項所記載的發明，乃屬於吸附薄層 基板的薄層基板移載用吸附墊片，是指具有環狀側壁部的 有底筒體所構成，該筒體是在底部側的一部分形成吸引孔 ，前述側壁部乃爲前端形成尖窄的錐狀爲其特徵的薄層基 板移載用吸附墊片。 若按照該構成，因爲側壁部的前端形成尖窄的錐狀， 所以筒體的側壁部和薄層基板的背面的接觸面積就會變小 ，經由該接觸面從側壁部側傳導到薄層基板側的熱量就會 -8 - (3) 1259551 被極力抑制。再者’在此，薄層基板和墊片的溫度差的正 負沒有特別問題’主要是從薄層基板觀察到相對性冷熱或 高熱會受到介著接觸面在薄層基板發生局部性溫度變化， 作爲熱傳導的處理。因而，即有低溫墊片被烘乾等的薄層 基板的高熱移動’薄層基板溫度局部性降低的形態，也有 因與上述相反的溫度關係而自薄層基板奪取局部性熱量的 形態。 申請專利範圍第2項所記載的發明，乃於申請專利範 圍第1項所記載的薄層基板移載用吸附墊片中，側壁部乃 爲外周面側形成錐狀爲其特徵。只要根據此構成，於吸引 時，側壁部的內面側與薄層基板接觸，就能防止接觸面積 有非必要的增大。 申請專利範圍第3項所記載的發明，乃於申請專利範 圍第1項或第2項所記載的薄層基板移載用吸附墊片中，側 壁部的前端端面的徑向尺寸爲0.1mm〜0.5mm爲其特徵。 而申請專利範圍第4項所記載的發明，乃於申請專利 範圍第3項所記載的薄層基板移載用吸附墊片中，側壁部 的前端端面的徑向尺寸爲〇.2mm爲其特徵。只要根據該些 構成，因爲側壁的前端面亦即與薄層基板的接觸面的徑向 尺寸極小，所以接觸面積變得很小，移動的熱量就會被抑 制。 申請專利範圍第5項所記載的發明，乃於申請專利範 圍第1項至第4項之任一項所記載的薄層基板移載用吸附墊 片中，側壁部是由吸引孔側的小徑基部側壁、和前端側的 -9 - (4) 1259551 大徑前端側壁、和連結基部側壁與前端側壁的連結部所構 成；前述前端側壁乃爲前述連結部連結的近傍部分的壁_ 尺寸爲0.5mm〜1,0mm爲其特徵。 申請專利範圍第6項所記載的發明，乃於申請專利範 圍第5項所記載的薄層基板移載用吸附墊片中，連結部的 壁厚尺寸爲〇.5mm〜1.0mm爲其特徵。只要根據該些構成 ’因爲在與薄層基板的接觸面連繫的前端側壁體積變小的 程度下，就能減少熱容量，所以向薄層基板移動的熱量也 會減少。 申請專利範圍第7項所記載的發明，乃於申請專利範 圍第1項至第6項之任一項所記載的薄層基板移載用吸附墊 片中，側壁部具有圓形爲其特徵。藉此吸引性能就很穩定 〇 申請專利範圍第8項所記載的發明，乃於申請專利範 圍第1項至第7項之任一項所記載的薄層基板移載用吸附墊 片中，在側壁部的內徑側形成等徑，且在周方向成爲等間 隔的位置形成複數個突起爲其特徵。只要根據該構成，以 載置在側壁部的狀態被吸引的話，薄層基板中，側壁部的 內周側就會受到吸引孔側的撓曲（凹入）力，但藉由突起的 存在，彎曲就會受到限制。此結果，就可抑制在與側壁部 的接觸部因變形，甚至因該變形與熱移動的膨脹和收縮發 生熱成像。 申請專利範圍第9項記載的發明，乃於申請專利範圍 第8項所記載的薄層基板移載用吸附墊片中，突起的前端 -10- (5) 1259551 相對於側壁部的前端，是設定爲等高的位置或較低爲其特 徵。只要根據此構成，突起爲與側壁部的前端相等的高度 的話，實際上就不會發生彎曲，而就算稍微低一點，只要 抵接在撓曲的薄層基板地設定突起的高度，彎曲就會受到 那種程度限制。 申請專利範圍第1 〇項所記載的發明，乃於申請專利範 圍第1項至第9項的任一項所記載的薄層基板移載用吸着墊 片中，筒體是由具耐熱性的樹脂製品所形成爲其特徵。只 要根據該構成，吸附墊片具有耐熱性，就沒有接觸部吸附 在高溫薄層基板等的問題，而爲樹脂製品的關係，也沒有 傷及薄層基板背面的情形。特別是作爲液晶用的情形下， 造成光穿透性問題，防止所謂傷及背面是很重要。 申請專利範圍第11項所記載的發明，乃爲具備有：載 置薄層基板的手部、和露出而設在該手部上面的申請專利 範圍第1項至第1 〇項的任一項所記載的薄層基板移載用吸 附墊片、和可改變前述手部位置的驅動部爲其特徵的薄層 基板移載裝置。只要根據該構成，就不會在例如熱處理的 薄層基板發生熱成像，能往下一個工程等（亦包括往欲積 層並可搬送基板的卡匣殼的收納動作，或是往欲向下一個 工程搬送的輸送機的移載動作）的移載（搬送）。 申請專利範圍第1 2項所記載的發明，乃於申請專利範 圍第11項所記載的薄層基板移載裝置中，在手部分散配置 複數個薄層基板移載用吸附墊片爲其特徵。只要根據該構 成，薄層基板就可更均勻的載置支持，實現穩定的移載姿 -11 - (6) 1259551 勢。 申請專利範圍第1 3項所記載的發明，乃爲在以互相偏 離積層複數枚薄層基板的狀態施行第一處理的第一處理部 與以互相偏離積層複數枚薄層基板的狀態施行第二處理的 第一處理部之間’配置申請專利範圍第1 1或1 2項所記載的 薄層基板移載裝置，一枚枚在第一處理部所處理的薄層基 板並交接到第二處理部，連續施行第一處理與第二處理爲 其特徵的薄層基板製造方法。只要根據該構成，就算在自 第一處理部被取出的薄層基板的溫度與常溫大小相同的情 形下’仍可一邊抑制發生熱成像一邊往下一個工程的第二 工程移送。 申請專利範圍第1 4項所記載的發明，乃於申請專利範 圍第I3項所記載的薄層基板移載裝置中，薄層基板乃爲玻 璃基板爲其特徵。只要根據該構成，特別是對造成熱成像 問題的玻璃基板而言有還大效果。 申請專利範圍第1 5項所記載的發明，乃於申請專利範 圍第14項所記載的薄層基板移載裝置中，第一處理部乃爲 熱處理爲其特徵的製造方法。只要根據該構成，將薄層基 板以烘乾等熱處理而處於高溫例如2〇〇〜25 0°C，成爲大於 常溫的溫度差，儘可能的抑制發生熱成像。 本發明的另一目的與特徵在於參照所附圖面經由以下 的說明而更明白。 【實施方式】 -12- (7) 1259551 本發明參照所附圖面經由以下的說明而更能理解。 第1圖是表示在當作薄層基板的玻璃基板面製造欲形 成薄膜電晶體等的液晶顯示的電氣性驅動電路的液晶模組 的一般陣列製造工程的一部分的流程圖。 薄膜形成前洗淨工程P 1是在進入製造工程前，自玻 璃基板的表面除去無機物或有機物的異物、污染物質，在 各個洗淨室施行沖刷洗淨、超音波洗淨、紫外線（UV)洗 淨及純水洗淨的洗淨處理，處理後施行烘乾（加熱乾燥）處 理。薄膜形成工程P2以形成薄膜電晶體等的電極（閘極 、源極、汲極、配線等參照第6圖）的處理，藉著利用濺鍍 、電漿化學氣相成長或真空蒸鍍法的薄膜形成裝置所施行 〇 光阻劑塗佈工程P3是以在薄膜形成後的玻璃基板表 面形成以所要厚度的感光材料製成的絕緣層的處理，並以 一邊旋轉玻璃基板一邊在其中央滴下所要量的塗佈液的旋 塗，使表面塗上塗佈材料的滾輪在玻璃基板面上旋轉的滾 輪塗佈的任一裝置來施行的。而塗佈光阻劑材的玻璃基板 ，是欲乾燥塗佈材料施行烘乾（加熱乾燥）處理。加熱乾燥 乃爲以例如預烘處理（利用80°〜150° )及後烘（200°〜 2 5 0 ° )而施行的處理。自光阻劑塗佈室往下一個工程的烘 乾處理室交接玻璃基板是利用移載機械人（例如參照第2圖 )等施行。 曝光工程P4是藉由投影透鏡（曝光系統）、投影反射鏡 或近接法，以顯示電路圖案的遮罩Ma來遮蔽玻璃基板並 -13- (8) 1259551 自上方照射光源光，曝光虛擬面的處理，在具備有曝光裝 置的處理室施行。再者，後述的第2圖是自該光阻劑塗佈 工程P 3的烘乾室將玻璃基板移送到曝光裝置的部分舉例 示之。藉著曝光處理，玻璃基板6的表面是電路圖案以外 的部分被感光。顯影工程P5 —邊旋轉玻璃基板一邊滴下 顯影液而施行的自旋顯影或施行自玻璃基板上方滴落顯影 液的淋浴顯影的處理。也在此施行烘乾處理。 其次，蝕刻工程P6是在除去曝光工程P4方面的曝光 區的光阻劑材的前處理，以乾式蝕刻或濕式蝕刻法施行。 光阻劑剝離工程P 7是在除去曝光工程P4方面的曝光區的 光阻劑材的處理，以電漿（乾式）硏磨（氮化）或濕式剝離法 施行。工程P 2〜P 7乃爲重複施行形成到所需要層數的陣 列爲止的工程。而且一旦針對所需要的層數完成處理，經 過檢査工程並往液晶胞的面板製造工程，更一同往模組組 裝工程移行。 如此玻璃基板在複數個工程中施行烘乾（用乾燥、用 烘烤等），並移送到下一個工程的處理室。 而第6圖是表示需要重複工程P1〜P7，藉此形成在玻 璃基板上的一部分的薄膜電晶體的構成圖之一例，（a)爲 斷面圖、（b)爲表示發生熱成像狀態的部分放大圖。於第6 圖中，在玻璃基板6上依閘極電極1 0 1、閘極絕緣膜1 〇 2、 非晶質矽層1〇3、n +非晶質矽層104、保護膜105、源極（或 汲極）電極1 〇 6及透明畫素電極i 〇 7的順序的層次而形成。 如第6圖（b)的放大圖所示，屬於閘極絕緣膜i 02的上層構 -14- 1259551 Ο) 件的源極（或汲極）電極106乃在於其左端亦即未鈾刻處理 範圍的區域的邊界，因熱成像而該部分接著性降低的結果 ，在與閘極絕緣膜1 02的接觸部產生捲曲1 1 0。本發明乃爲 在與起因於此種熱成像的蝕刻區的邊界位置抑制產生捲曲 等。 第2圖是表示應用有關本發明的薄層基板移載用吸附 墊片的薄層基板製造裝置的一部分的外觀圖。於第2圖， 複數個處理室等是介著搬送系統而配設。本實施形態中， 表示當作第一處理部的烘乾室1、和當作第二處理部的例 如曝光室2(詳細圖省略之），在其間配設基板移載裝置3、 輸送機裝置4。再者，圖示雖沒有，但在烘乾室1的上流側 配設有例如光阻劑塗佈室等。 烘乾室1係在內部具備有高溫發熱體（加熱器），收納 有卡匣5。卡匣5係具有多段的積層構造，當作所需要枚數 的薄層基板的玻璃基板6是各偏離所需距離而積層。向卡 匣5的烘乾室1的搬入可利用圖省略的（與基板移載裝置3同 樣的構造）移載裝置來施行。曝光室2雖沒有詳細表示，但 例如具備有：將可搬入的玻璃基板定位的機構、以定位並 被覆遮罩圖案的狀態施行曝光的機構。 基板移載裝置3係在內部具備有移載機械人30。移載 機械人3 0具備有：基部3 1、和自基部到頂部近傍爲直立的 引導用柱體3 2、和具有可相對於引導用柱體3 2而昇降的構 造的昇降部3 3、和在昇降部3 3上面於垂直軸周邊轉動的第 一支臂34、和連結在第一支臂34的前端，在垂直軸周邊進 -15- (10) 1259551 行轉動的第二支臂3 5、和立設在第二支臂3 5的前端，具有 固定在馬達1等的驅動源3 6的水平面的手部3 7。而移載機 械人3 〇係具備有驅動源3 1 0，第二支臂3 5的昇降、前後移 動及左右轉動是藉由周知的內部機構（圖未示）施行，同 時具備有連結手部37與圖省略的吸引源的吸引配管（其一 部分表示於第3圖）。把柄3 7的詳細構造是以第3圖以後做 說明。 基板移載裝置3具備相關構成的結果，手部3 7即成爲 自由的昇降、旋轉、進退。例如依舊向著同一方向（烘乾 室1側）的姿勢，在烘乾室1經由窗口 la進入到玻璃基板6的 下部，在該位置上昇而提起玻璃基板6，且進行吸引並照 原樣後退就可脫出。脫出後向1 8 0 °反轉，且變更高度並 自（如圖中以虛線所示的）窗口 4 a進入到輸送機裝置4內， 就可移載到輸送機41上。而輸送機裝置4乃爲具備有複數 根轉動軸以所需要的間距被平行配置的旋轉軸4 i〗、和在 各旋轉軸4 1 1的長邊方向以所需要的間隔可複數個共同旋 轉被設置的滾輪4 1 2，將載置在輸送機4 1上的玻璃基板6按 順序向第二處理室2移送者。 第3圖乃爲手部的構造圖’（a)爲平面圖、（b)爲側面圖 。手部3 7乃自固設在驅動源3 6的軸部的基部3 7 0以所定的 間隔放置並平行地安裝具有所需要長度的一對指狀部3 7 ；! 、3 72。指狀部371、3 72乃具有同一形狀，且以長板狀、 固形樹脂材所構成。樹脂爲了支撐高溫的玻璃基板6，具 有耐熱性’而由抑制傳熱的観點來看，以熱容量小、熱傳 -16- (11) 1259551 導性低的物質更理想。本實施形態是使用PEEK(聚醚醚銅 )。第3圖是在指狀部3 7 1、3 7 2載置長方體形狀的玻璃基板 6 〇 在指狀部3 7 1乃於前端側適當處與略中間位置分別設 有吸引用墊片7 1、7 2，在指狀部3 7 2乃與指狀部3 7 1同樣地 ，於前端部與略中央位置分別設有吸引用墊片7 3、74。各 墊片71〜74在本實施形態是設在指狀部371、3 72的外側部 ，成爲以更廣的位置支撐玻璃基板6 °而吸引用墊片7 1、 7 2及7 3,7 4是配設成左右對稱（直線式對稱’成爲確保左右 取得平衡的載置姿勢。再者’各墊片71〜74具有同一構造 ，詳細乃於第4圖示之。 自基部3 70到整個墊片71、72的指狀部371上面形成溝 3 7 1 0，在該溝3 7 1 0埋設有吸入配管3 7 1 1、3 7 1 2。同樣地自 基部370到整個墊片73、74的指狀部372上面形成溝3720, 在該溝3720埋設有吸入配管3721、3722。 更且，指狀部371上的感應器91及指狀部3 72上的感應 器92是用來檢測有無搭載玻璃基板6 ’由光學感應器等的 靠近感應器或機械式開關製成的。 第4圖是吸引墊片的構造圖，（a)爲側面斷面圖、（…爲 平面圖、（c)爲部分放大圖、（d)爲整體立體圖。吸引墊片 7 1〜7 4是同一形狀，在此以吸引墊片7 1爲代表做一說明。 吸引墊片7 1是以具有圓形狀的有底筒體作爲基本形狀，由 側壁部7 1 1和底部7 1 2所構成。在底部7 1 2的中央形成所需 要直徑的吸引孔713 ’連接在吸引配管3711。 -17- (12) 1259551 側壁部7 11是由底部7 1 2側的小徑基部側壁7 1 4、和前 端側的大徑前端側壁715、和連結基部側壁714與前端側壁 7 1 5的連結部7 1 6所構成。本實施例乃爲底部7 1 2的外徑2 5 mm，吸引孔713的直徑10mm，基部側壁714的高度4mm， 前端側壁71 5的外周徑30mm，高度3.5mm，基端的壁厚 0.8 m m，連結部7 1 6的壁厚0.8 m m。而前端側壁7 1 5是則端 側成爲開放地形成大徑，且稍微成爲尖窄形。且前端側壁 7 1 5的前端部分乃爲外壁側具有尖窄的錐狀，且前端端面 7 15a的徑向尺寸設定爲0.2mm。而連結部71 6是自中間開 始外側被彎曲至前端側壁7 1 5側，底部7 1 2、基端側壁7 1 4 、連結部716爲整體，成爲自載置的玻璃基板6的背面離開 ，而儘可能抑制因散熱的熱移動。 再者，前端側壁7 1 5的前端端面7 1 5 a亦即與玻璃基板 6的接觸面的徑向尺寸以0.1mm〜0.5mm爲佳。此乃根據小 尺寸強度上的限度、和因接觸面擴大的傳熱量受抑制的限 度。亦即與玻璃基板6的接觸面積愈小，吸引墊片7 1的冷 熱就愈不會傳熱到被烘乾等的高溫玻璃基板6，就能有效 抑制乃至防止發生熱成像。而前端端面7 1 5 a徑向尺寸爲 0.2 mm時，由強度面與傳熱面兩者來看都很適當。 而前端側壁7 1 5的基部亦即與連結部7 1 6連結的近傍部 分的壁厚尺寸以0.5 mm〜1 .0mm爲佳。此乃一旦太薄，強 度面變很有限，而一旦達到1.0mm程度的厚度，蓄積在此 部分的冷熱的熱量變多，該熱量會被傳熱到玻璃基板6。 而連結部716的壁厚尺寸以〇.5mm〜1.0mm爲佳。此 -18- (13) 1259551 亦根據在強度面的限度、度傳熱量的限制。 再者，第5圖是表示吸引墊片變形例的構造圖，（a)爲 側面斷面圖、（b)爲平面圖、（c)爲整體立體圖。該吸引墊 片71’的基本構造乃與第4圖所示的吸引墊片71相同，較大 的相異點是在前端側壁7 1 5 ’的內側具備有架設在連結部 7 1 6 ’的複數個突起7 1 7 ’的這點。以下針對該突起7 1 7 ’的構 造做一說明。 突起7 1 7 ’在前端側壁7 1 5 5的內徑側爲等徑且周方向 等間隔，而此例是每90°合計形成四個。突起71 7’的形狀 爲四角錐，與前端的玻璃基板6的接觸面積極力縮小，而 一邊抑制傳熱量一邊達到確保支撐。在突起7 17’的前端對 前端側壁7 1 5 5的前端高度而言，爲相等的高度位置，或稍 低一點，例如此例形成只低於0.0 5 mm。不設突起7 1 7 5，例 如第4圖的形態，在前端側壁7 1 5載置玻璃基板6，被吸引 時，成爲圓形的前端端面715a的內側的玻璃基板6是藉由 負壓，如第4圖（a)以假想線所示，吸引墊片7 1側成爲稍微 地撓曲（凹入），但藉由該撓曲，玻璃基板6在前端端面 7 1 5 a的部分會發生環狀彎曲亦即變形，在該撓曲的狀態 ，一旦因傳熱發生溫度變化，就會因那時的膨脹、收縮， 直到那時候在所形成的陣列層發生捲曲、龜裂，並很容易 在該部分發生所謂接著性降低的熱成像，良品率會有限度 的減低。於是如第5圖般，設有支撐用乃至限制彎曲用的 突起7 1 7 ’’以頂抗因負壓引起而產生的撓曲來支撐玻璃基 板6 ’結果能抑制撓曲，良品率會更加減低。特別是玻璃 -19- (14) 1259551 基板6更薄層化的時候，良品率的減低效果變大。而突起 7 1 7’的數量並不限於四個，只要均勻的配置即可，兩個也 可三個乃至三個以上的所需要數量都可。更且，前端形狀 只要爲可抑制傳熱量的形狀即可，除點狀外，線狀也可。 該吸引墊片7 1、7 Γ就藉由噴射加工來製造。 再者，本發明乃以液晶模組用的玻璃基板爲例所做的 說明，但本發明並不限於此，就矽晶圓等其他薄層基板中 ，在以移載用等的吸引墊片進行載置的情形下，也適用於 溫度差受不良影響的技術。而不限於吸引墊片，也同樣可 供只載置薄層基板墊片。 只要根據申請專利範圍第1項所記載的發明，筒體的 側壁部與薄層基板的背面的接觸面積變小的緣故，就可極 力減低經由該接觸面自側壁部側傳導到薄層基板側的熱量 (傳熱量），抑制產生熱成像。 只要根據申請專利範圍第2項所記載的發明，於吸引 時側壁部的內面側會與薄層基板接觸，不必要增大接觸面 積就能防止。 只要根據申請專利範圍第3、4項所記載的發明，側壁 的前端面亦即與薄層基板的接觸面的徑向尺寸極力縮小， 就能抑制傳熱量。 只要根據申請專利範圍第5、6項所記載的發明，連繫 在與薄層基板的接觸面的前端側壁的體積爲很小的程度， 就能減少熱容量，就能減低傳向薄層基板的傳熱量。 只要根據申請專利範圍第7項所記載的發明，就能使 -20- (15) 1259551 吸引性能穩定。 只要根據申請專利範圍第8項所記載的發明，就能限 制薄層基板彎曲。此結果能經由因在與側壁部的接觸部引 起的變形，甚至因此變形與熱移動引起的膨脹及收縮，抑 制發生熱成像。 只要根據申請專利範圍第9項所記載的發明，就能限 制薄層基板彎曲。 只要根據申請專利範圍第1 0項所記載的發明，因爲具 有耐熱性，所以就沒有附著在薄層基板等的問題，而爲樹 脂製品的關係也不會傷及薄層基板的背面。特別是對使用 液晶的時候很有效。 只要根據申請專利範圍第11項所記載的發明，就不會 在例如被熱處理的薄層基板發生熱成像，成爲可向下一個 工程等（也包括向著可積層基板的卡匣殼的收納動作）的移 載（搬送）。 只要根據申請專利範圍第1 2項所載的發明，就能藉由 薄層基板實現均勻的載置支撐，得到穩定的移載姿勢。 只要根據申請專利範圍第1 3項所記載的發明，自第一 處理部被取出的薄層基板的溫度與常溫大不相同的時候， 也能一邊抑制發生熱成像一邊往屬於下一個工程的第二工 程移送。 只要根據申請專利範圍第1 4項所記載的發明，特別是 對於會造成熱成像問題的玻璃基板可獲得很高的效果。 只要根據申請專利範圍第1 5項所記載的發明，將薄層 -21 - (16) 1259551 基板用烘乾等的熱處理成爲高溫例如200〜2 5 0°C中，與常 溫形成很大溫度差的情形下也能儘量抑制發生熱成像。 在此所採用的用語及說明乃是爲了說明有關本發明的 實施形態之一者，本發明並不限於此。只要是在本發明申 請專利範圍之範圍內，不脫其精神的程度，亦容許變更相 關設計。1259551 (1) 玖, invention description [Technical field of invention] Thin layer substrate manufacturing Adsorption gasket. Group of technologies. The liquid crystal pixels, or the formation of the thin film transistor, are formed by a substrate having a high temperature after the exposure of the photomask of the photosensitive pattern thereon. Substrate transfer device The hand of the glass substrate. The glass substrate is placed on the ring gasket, while the downward temperature, for example, once the adsorption pad, the suction temperature drops. The present invention relates to a thin substrate substrate such as a glass substrate, a thin substrate transfer device, and a thin substrate transfer. [Prior Art] It is known to manufacture a liquid crystal module by using a glass substrate. It is manufactured by forming a thin film transistor for a plurality of display operations constituting a screen on a glass substrate. For example, in the construction process, the coating process of the conductive material of the glass substrate, the coating process of the photoresist of the material, the circuit engineering using the respective layers, the development engineering, and the etching process are repeated until the shape. Then, the processing chambers that are required to be dried are placed in the respective projects. A substrate transfer device for providing a processing chamber for the next project to be sent between the processing chambers is provided with a mounting glass at the front end of the pivotable and telescopic arm, and the desired amount is disposed on the hand. Adsorption pad for the side wall. However, the glass substrate is placed on the substrate to be adsorbed and adsorbed, and the heat is transferred to the glass substrate under the substrate heated to 200 ° C or higher before the drying process. Once the local temperature drop affects the glass base side, it will attract locality (contact portion) and then the performance will decrease. In the etching of (2) 1259551 after development, there will be a subsequent layer between the layers of the boundary portion. Poor, that is, the case of so-called thermal imaging in which curling (turning over) occurs. Especially in the case of thin-filmed components of glass substrates, there are also substrates with a thickness of a few tenths of a millimeter. The heat and cold will be more easily transmitted to the surface side due to the thinning, which makes the problem of thermal imaging more obvious. The possibility of a worsening yield. On the other hand, the glass substrate which is placed on the upper end portion of the annular side wall of the suction pad is recessed by the negative pressure of the side wall circular space, and an annular curved portion is formed along the side wall, but it is also considered that the curved portion is Mechanical deformation, thermal expansion, and shrinkage are more likely to occur in the aforementioned thermal imaging. SUMMARY OF THE INVENTION The present invention has been made in view of the related matters, and an object of the present invention is to provide a method for manufacturing a thin layer substrate which minimizes a contact area of a thin layer substrate at the time of suction transfer to suppress thermal imaging, and a thin layer substrate transfer device And an adsorption pad for thin layer substrate transfer. The invention described in claim 1 is an adsorption pad for transferring a thin-layer substrate on a thin-film substrate, and is a bottomed cylindrical body having an annular side wall portion, and the cylindrical body is on the bottom side. A part of the side wall portion is formed as a suction hole, and the side wall portion is a thin-layer substrate transfer adsorption pad which is characterized by a tapered shape at the tip end. According to this configuration, since the tip end portion of the side wall portion is formed in a tapered shape, the contact area between the side wall portion of the cylindrical body and the back surface of the thin substrate is reduced, and the side surface portion is guided to the thin substrate via the contact surface. The side heat will be -8 - (3) 1259551 is suppressed as much as possible. Furthermore, 'there is no particular problem with the positive or negative temperature difference between the thin substrate and the spacer'. It is mainly observed that the relative thermal or high heat from the thin substrate is subject to local temperature changes on the thin substrate via the contact surface. As a treatment of heat conduction. Therefore, there is a form in which the temperature of the thin layer substrate of the thin substrate which is dried or the like is dried, and the temperature of the thin layer substrate is locally lowered, and the local heat is taken from the thin substrate due to the temperature relationship opposite to the above. The invention according to the second aspect of the invention, wherein the side wall portion has a tapered shape on the outer peripheral surface side of the suction pad for thin-layer substrate transfer according to the first aspect of the invention. According to this configuration, when the inner surface side of the side wall portion comes into contact with the thin substrate at the time of suction, an unnecessary increase in the contact area can be prevented. The invention according to the third aspect of the invention, wherein the radial dimension of the front end surface of the side wall portion is 0.1 mm in the adsorption pad for thin-layer substrate transfer according to the first or second aspect of the invention. 0.5mm is a feature. In the invention, the invention disclosed in claim 4 is characterized in that the radial dimension of the front end surface of the side wall portion is 〇.2 mm in the adsorption pad for thin-layer substrate transfer described in claim 3 of the patent application. . According to these configurations, since the front end surface of the side wall, that is, the radial dimension of the contact surface with the thin substrate, is extremely small, the contact area becomes small, and the amount of heat of movement is suppressed. The invention according to claim 5, wherein the side wall portion is small on the side of the suction hole in the adsorption pad for thin-layer substrate transfer according to any one of the first to fourth aspects of the invention. a side wall of the base portion and a distal end side of the -9 - (4) 1259551 large-diameter front end side wall, and a connecting portion connecting the base side wall and the front end side wall; the front end side wall is a wall portion of the proximal portion of the connecting portion 0.5mm~1,0mm is a feature. The invention described in the sixth aspect of the invention is characterized in that the thickness of the connecting portion is 〇5 mm to 1.0 mm in the suction pad for transferring a thin-layer substrate according to the fifth aspect of the invention. According to these configurations, since the heat capacity can be reduced to the extent that the volume of the front end side wall connected to the contact surface of the thin substrate becomes small, the amount of heat transferred to the thin substrate is also reduced. The invention described in the seventh aspect of the invention, wherein the side wall portion has a circular shape in the adsorption pad for a thin-layer substrate transfer according to any one of the first to sixth aspects of the invention. In the suction pad for thin-layer substrate transfer described in any one of the first to seventh aspects of the patent application, The inner diameter side of the side wall portion is formed into a constant diameter, and a plurality of protrusions are formed at positions at equal intervals in the circumferential direction. According to this configuration, in the thin-layer substrate, the inner peripheral side of the side wall portion receives the deflection (recess) force on the suction hole side in the state of being placed on the side wall portion. However, by the presence of the protrusion, Bending is limited. As a result, it is possible to suppress thermal imaging at the contact portion with the side wall portion due to deformation, and even expansion and contraction due to the deformation and heat movement. The invention according to the ninth aspect of the invention, wherein the front end of the protrusion -10- (5) 1259551 is opposed to the front end of the side wall portion in the adsorption pad for thin-layer substrate transfer according to the eighth aspect of the invention. The position set to the same height or lower is characterized by it. According to this configuration, if the projection has a height equal to the front end of the side wall portion, the bending does not actually occur, and even if it is slightly lower, the bending is performed as long as the height of the projection is set against the curved thin substrate. Subject to that extent. The invention according to the first aspect of the invention, wherein the cylinder is made of a heat-resistant one. Resin articles are characterized by their formation. According to this configuration, the adsorption pad has heat resistance, and there is no problem that the contact portion is adsorbed on the high-temperature thin substrate or the like, and the resin product does not damage the back surface of the thin substrate. In particular, in the case of liquid crystal, it is a problem of light penetration, and it is important to prevent the so-called injury to the back. The invention described in claim 11 is any one of the first to the first aspects of the patent application scope including a hand for placing a thin substrate and an exposed portion provided on the hand. The thin-layer substrate transfer device characterized by the adsorption pad for transferring a thin-layer substrate and the driving portion capable of changing the position of the hand. According to this configuration, thermal imaging is not performed on a thin-film substrate such as heat treatment, and it is possible to proceed to the next project or the like (including the storage operation of the cassette which is to be laminated and can transport the substrate, or to the next one. Transfer (transfer) of the transfer operation of the conveyor to be transported by the project. In the thin-layer substrate transfer device according to the eleventh aspect of the invention, in the invention, the plurality of thin-layer substrate transfer adsorption pads are disposed in the hand portion. . According to this configuration, the thin substrate can be more uniformly supported and achieve a stable transfer posture -11 - (6) 1259551 potential. According to the invention of the first aspect of the invention, the first processing unit that performs the first processing in a state in which the plurality of thin-layer substrates are stacked apart from each other and the second processing layer in which the plurality of thin-layer substrates are separated from each other are applied. Between the first processing units to be processed, the thin-layer substrate transfer device described in the first or second aspect of the patent application is disposed, and the thin-layer substrate processed by the first processing unit is transferred to the second processing. A thin layer substrate manufacturing method characterized by continuously performing a first process and a second process. According to this configuration, even if the temperature of the thin substrate taken out from the first processing unit is the same as the normal temperature, the second project transfer to the next project can be suppressed while suppressing the occurrence of thermal imaging. The thin film substrate transfer device according to the invention of claim 1, wherein the thin substrate is a glass substrate. According to this configuration, it is particularly effective for a glass substrate which causes thermal imaging problems. In the thin-layer substrate transfer device according to the fourteenth aspect of the invention, the first processing unit is a manufacturing method characterized by heat treatment. According to this configuration, the thin-layer substrate is subjected to heat treatment such as baking to a high temperature of, for example, 2 Torr to 0.25 ° C, and becomes a temperature difference greater than normal temperature, and thermal imaging is suppressed as much as possible. Other objects and features of the present invention will become apparent from the accompanying drawings. [Embodiment] -12- (7) 1259551 The present invention will be better understood by referring to the accompanying drawings. Fig. 1 is a flow chart showing a part of a general array manufacturing process of a liquid crystal module in which an electric drive circuit for forming a liquid crystal display such as a thin film transistor is formed on a glass substrate surface as a thin substrate. The pre-film formation cleaning process P 1 is a foreign matter or a contaminant that removes inorganic substances or organic substances from the surface of the glass substrate before entering the manufacturing process, and is washed, ultrasonically washed, and ultraviolet (UV) washed in each of the cleaning chambers. Washing treatment with pure and pure water, and drying (heating and drying) after treatment. The film formation process P2 is performed by forming an electrode (gate, source, drain, wiring, etc., see FIG. 6) of a thin film transistor, by sputtering, plasma chemical vapor deposition, or vacuum evaporation. The thin film forming apparatus performs the photoresist coating process P3 by forming an insulating layer made of a photosensitive material having a desired thickness on the surface of the glass substrate after the film formation, and is required to drip at the center while rotating the glass substrate. The amount of the coating liquid is applied by spin coating to apply a roller coated with a coating material to the surface of the glass substrate. The glass substrate coated with the photoresist material is subjected to drying (heat drying) treatment to dry the coating material. The heat drying is performed by, for example, prebaking treatment (using 80 ° to 150 °) and post-baking (200 ° to 250 °). The transfer of the glass substrate from the photoresist coating chamber to the drying processing chamber of the next project is performed by a transfer robot (for example, see Fig. 2). The exposure project P4 is to shield the glass substrate by a projection lens (exposure system), a projection mirror or a proximity method to display a mask of the circuit pattern and to illuminate the light source from above, and expose the virtual surface. The treatment is carried out in a processing chamber equipped with an exposure device. Further, the second drawing to be described later is an example in which the glass substrate is transferred from the drying chamber of the photoresist coating project P 3 to the exposure device. By the exposure processing, the surface of the glass substrate 6 is exposed to light other than the circuit pattern. The development project P5 is a spin development performed by dropping a developer while rotating a glass substrate or a shower development process of dropping a developer from above a glass substrate. Drying is also performed here. Next, the etching process P6 is a pretreatment of the photoresist material in the exposure region in which the exposure process P4 is removed, and is performed by dry etching or wet etching. The photoresist stripping process P 7 is a treatment of the photoresist material in the exposed region in the removal of the exposure process P4, and is performed by plasma (dry) honing (nitriding) or wet stripping. The works P 2 to P 7 are works for repeating the formation of the array of the required number of layers. Moreover, once the processing is completed for the required number of layers, the panel manufacturing process for the liquid crystal cell is checked, and the module assembly project is moved together. Thus, the glass substrate is dried (dried, baked, etc.) in a plurality of projects and transferred to the processing chamber of the next project. 6 is a view showing an example of a configuration of a thin film transistor formed on a glass substrate by repeating the processes P1 to P7, wherein (a) is a sectional view and (b) is a state in which a thermal imaging state is generated. Partially enlarged view. In the sixth embodiment, the gate electrode 1 0 1 , the gate insulating film 1 〇 2, the amorphous germanium layer 1〇3, the n + amorphous germanium layer 104, the protective film 105, and the source are formed on the glass substrate 6. The pole (or drain) electrode 1 〇 6 and the transparent pixel electrode i 〇 7 are formed in the order of the layers. As shown in the enlarged view of Fig. 6(b), the source (or drain) electrode 106 of the upper layer of the gate insulating film i 02 is at the left end, that is, without uranium engraving. As a result of the decrease in the portion of the boundary of the region of the range due to thermal imaging, the curl 1 1 0 is generated at the contact portion with the gate insulating film 102. The present invention suppresses generation of curl or the like at a boundary position with an etching region resulting from such thermal imaging. Fig. 2 is an external view showing a part of a thin-layer substrate manufacturing apparatus to which the adsorption pad for thin-layer substrate transfer of the present invention is applied. In Fig. 2, a plurality of processing chambers and the like are disposed via a transport system. In the present embodiment, the drying chamber 1 serving as the first processing unit and the exposure chamber 2 serving as the second processing unit (not shown in detail) are disposed, and the substrate transfer device 3 and the conveyor device are disposed therebetween. 4. Further, although not shown in the drawings, for example, a photoresist coating chamber or the like is disposed on the upstream side of the drying chamber 1. The drying chamber 1 is provided with a high-temperature heating element (heater) inside, and a cassette 5 is housed therein. The cassette 5 has a multi-layered laminated structure, and the glass substrate 6 serving as a desired number of thin substrates is laminated with a desired distance. The loading into the drying chamber 1 of the cassette 5 can be carried out by means of a transfer device (the same structure as the substrate transfer device 3) which is omitted in the drawing. Though not shown in detail, the exposure chamber 2 includes, for example, a mechanism for positioning the glass substrate that can be carried in, and a mechanism for exposing the state in which the mask pattern is positioned and covered. The substrate transfer device 3 is provided with a transfer robot 30 therein. The transfer robot 30 includes a base portion 3 1 and a guide cylinder 3 2 that is upright from the base portion to the top portion, and a lift portion 33 that has a structure that can be raised and lowered with respect to the guide cylinder 3 2 , And a first arm 34 that rotates on the periphery of the vertical axis on the lifting portion 3 3 and a second arm 3 that is coupled to the front end of the first arm 34 and that rotates in the vicinity of the vertical axis by -15-(10) 1259551 5, and at the front end of the second arm 35, having a hand 37 fixed to the horizontal plane of the drive source 36 of the motor 1 or the like. The transfer robot 3 has a drive source 310, and the second arm 35 is lifted, moved forward and backward, and rotated to the left and right by a well-known internal mechanism (not shown), and has a connecting hand. 37 and a suction pipe of a suction source (not shown) (a part of which is shown in Fig. 3). The detailed structure of the handle 37 is explained later in Fig. 3. As a result of the configuration of the substrate transfer device 3, the hand portion 3 7 is freely moved up, down, and advanced. For example, in the same direction (the side of the drying chamber 1), the drying chamber 1 enters the lower portion of the glass substrate 6 via the window la, and the glass substrate 6 is lifted at this position, and the glass substrate 6 is lifted and retracted as it is. Come out. After the escape, it is reversed to 180 °, and the height is changed and the window 4 a (shown by a broken line in the figure) enters the conveyor device 4 and can be transferred to the conveyor 41. The conveyor device 4 is provided with a plurality of rotating shafts having a plurality of rotating shafts arranged in parallel at a required pitch, and a plurality of common rotating at a required interval in the longitudinal direction of each of the rotating shafts 41 1 The roller 4 1 2 is placed, and the glass substrate 6 placed on the conveyor 41 is sequentially transferred to the second processing chamber 2. Fig. 3 is a structural view of the hand' (a) is a plan view and (b) is a side view. The hand portion 3 7 is placed at a predetermined interval from the base portion 370 fixed to the shaft portion of the drive source 36 at a predetermined interval and is mounted in parallel with a pair of finger portions 3 7 ; ; 3 72 having a desired length. The fingers 371 and 3 72 have the same shape and are formed of a long plate shape or a solid resin material. In order to support the high-temperature glass substrate 6, the resin has heat resistance, and it is more preferable to have a low heat capacity and a low heat conductivity of -16-(11) 1259551. In this embodiment, PEEK (polyetherether copper) is used. 3 is a glass substrate 6 having a rectangular parallelepiped shape placed on the finger portions 3 7 1 and 3 7 2, and a suction pad 7 1 is provided at a position slightly adjacent to the distal end side of the finger portion 317. In the same manner as the finger portion 317, the finger portions 372 are provided with suction pads 733 and 74 at the front end portion and the center portion, respectively. In the present embodiment, each of the spacers 71 to 74 is provided on the outer side of the finger portions 371 and 327, and supports the glass substrate 6° at a wider position, and the suction spacers 7 1 , 7 2 and 7 3, 7 4 is arranged in a bilateral symmetry (linear symmetry) to ensure a balanced mounting posture on the left and right. Further, each of the spacers 71 to 74 has the same structure, and the details are shown in Fig. 4. From the base portion 3 to the entire The grooves 371 are formed on the upper surface of the fingers 371 of the spacers 71 and 72, and the suction pipes 3 7 1 1 and 3 7 1 2 are embedded in the grooves 3 7 1 0. Similarly, from the base 370 to the entire spacer 73, A groove 3720 is formed on the upper surface of the finger portion 372 of the 74, and the suction pipes 3721 and 3722 are embedded in the groove 3720. Further, the inductor 91 on the finger portion 371 and the sensor 92 on the finger portion 3 72 are used for detecting. The presence or absence of the mounting glass substrate 6' is made of an optical sensor or the like, or a mechanical switch. Fig. 4 is a structural view of the suction pad, (a) is a side sectional view, (... is a plan view, (c) ) is a partial enlarged view, and (d) is an overall perspective view. The suction pads 7 1 to 7 4 are of the same shape, and the suction pad 7 1 is represented here as a representative. The suction spacer 7 1 has a bottomed cylinder having a circular shape as a basic shape, and is composed of a side wall portion 71 1 and a bottom portion 71 2 . A suction hole 713 having a desired diameter is formed at the center of the bottom portion 71 1 . 'Connected to the suction pipe 3711. -17- (12) 1259551 The side wall portion 7 11 is a small-diameter base side wall 7 1 4 on the bottom 7 1 2 side, and a large-diameter front end side wall 715 on the front end side, and a joint base side wall 714 and The connecting portion 7 16 of the front end side wall 7 15 is formed. In this embodiment, the outer diameter of the bottom portion 7 1 2 is 2 5 mm, the diameter of the suction hole 713 is 10 mm, the height of the base side wall 714 is 4 mm, and the outer circumference of the front end side wall 71 5 The diameter is 30 mm, the height is 3.5 mm, the thickness of the base end is 0.8 mm, and the thickness of the connecting portion 716 is 0.8 mm. The front end side wall 715 is formed to have a large diameter on the end side and is slightly tapered. The front end portion of the front end side wall 715 has a tapered tapered shape on the outer wall side, and the radial dimension of the front end end face 715a is set to 0.2 mm. The joint portion 716 is bent outward from the middle to the front end side wall 7 1 5 side, bottom 7 1 2, base end side wall 7 1 4, and connecting portion 716 as a whole, becoming self-loading glass The back surface of the substrate 6 is separated, and the heat transfer due to heat dissipation is suppressed as much as possible. Further, the front end surface 7 1 5 a of the front end side wall 715 is a radial dimension of the contact surface with the glass substrate 6 of 0.1 mm to 0.5 mm. Preferably, this is based on the limit on the strength of the small size and the limit of the amount of heat transfer due to the expansion of the contact surface. That is, the smaller the contact area with the glass substrate 6, the less the heat of the suction pad 7 1 is transferred to the high-temperature glass substrate 6 to be dried or the like, and the thermal imaging can be effectively suppressed or prevented from occurring. When the front end face 7 1 5 a has a radial dimension of 0.2 mm, it is suitable from both the strength surface and the heat transfer surface. Further, the thickness of the base portion of the front end side wall 715, that is, the proximal portion of the connecting portion 716 is preferably 0.5 mm to 1.0 mm. When it is too thin, the strength surface becomes very limited, and once it reaches a thickness of about 1.0 mm, the amount of heat accumulated in this portion becomes large, and the heat is transferred to the glass substrate 6. The thickness of the connecting portion 716 is preferably from 55 mm to 1.0 mm. This -18-(13) 1259551 is also limited according to the limit of the strength surface and the amount of heat transfer. In addition, Fig. 5 is a structural view showing a modification of the suction pad, wherein (a) is a side sectional view, (b) is a plan view, and (c) is an overall perspective view. The basic structure of the suction pad 71' is the same as that of the suction pad 71 shown in Fig. 4, and the large difference is that the inside of the front end side wall 7 1 5 ' is provided on the inner side of the front end side wall 7 1 5 '. This is the point of the plurality of protrusions 7 1 7 '. The following is a description of the configuration of the projections 7 1 7 '. The projections 7 1 7 ' are equally spaced on the inner diameter side of the front end side wall 7 1 5 5 and equally spaced in the circumferential direction, and in this example, four are formed every 90° total. The shape of the projection 71 7' is a quadrangular pyramid, and the contact surface with the glass substrate 6 at the tip end is reduced in positive force, and the support is ensured while suppressing the amount of heat transfer. The height of the front end of the front end side wall 7 1 5 5 at the front end of the projection 7 17' is equal to the height position, or slightly lower, for example, the formation is only less than 0.05 mm. The projections 7 1 7 5 are not provided. For example, in the form of Fig. 4, when the glass substrate 6 is placed on the front end side wall 715, when the glass substrate 6 is attracted, the glass substrate 6 inside the circular front end surface 715a is under negative pressure. As shown in Fig. 4(a), the suction pad 7 1 side is slightly deflected (recessed) as shown by the imaginary line, but by this deflection, the glass substrate 6 occurs at the front end end face 7 1 5 a. The annular bending is also deformation. In the state of flexing, once the temperature changes due to heat transfer, it will expand and contract at that time, until then, curling and cracking occur in the formed array layer, and it is easy. In this part, thermal imaging with a so-called decrease in adhesion occurs, and the yield is limited. Therefore, as shown in Fig. 5, the protrusions 7 1 7 '' for supporting or even limiting the bending support the glass substrate 6 by the deflection caused by the negative pressure. As a result, the deflection can be suppressed, and the yield rate is further improved. reduce. In particular, when the glass -19-(14) 1259551 substrate 6 is thinner, the yield reduction effect becomes large. The number of the protrusions 7 1 7' is not limited to four, as long as it is uniform, and two or three or more may be required. Further, the shape of the tip end may be a shape that can suppress the amount of heat transfer, and may be linear in addition to the dot shape. The suction spacers 7 1 and 7 are manufactured by jet processing. Furthermore, the present invention has been described by taking a glass substrate for a liquid crystal module as an example. However, the present invention is not limited thereto, and in other thin-layer substrates such as a germanium wafer, a suction pad for transfer or the like is used. In the case of placement, it is also applicable to techniques in which the temperature difference is adversely affected. It is also possible to mount only a thin substrate spacer, not limited to the attraction of the spacer. According to the invention of the first aspect of the invention, the contact area between the side wall portion of the tubular body and the back surface of the thin substrate is reduced, and the conduction from the side of the side wall portion to the side of the thin substrate can be minimized. The amount of heat (heat transfer) that inhibits the generation of thermal imaging. According to the invention described in the second aspect of the patent application, the inner surface side of the side wall portion is brought into contact with the thin substrate at the time of suction, and it is possible to prevent the contact surface from being increased without increasing the contact area. According to the invention described in the third and fourth aspects of the patent application, the front end surface of the side wall, that is, the radial dimension of the contact surface with the thin substrate is extremely reduced, and the amount of heat transfer can be suppressed. According to the invention described in the fifth and sixth aspects of the patent application, the volume of the front end side wall of the contact surface with the thin substrate can be reduced to a small extent, the heat capacity can be reduced, and the transfer to the thin substrate can be reduced. The amount of heat transfer. As long as the invention described in the seventh paragraph of the patent application is applied, the attraction performance of -20-(15) 1259551 can be stabilized. According to the invention described in the eighth aspect of the patent application, the thin substrate can be restricted from being bent. This result can suppress the occurrence of thermal imaging via deformation due to deformation at the contact portion with the side wall portion, and even expansion and contraction caused by deformation and heat transfer. According to the invention described in claim 9 of the patent application, the bending of the thin substrate can be restricted. According to the invention described in claim 10, since it has heat resistance, there is no problem of adhesion to a thin substrate or the like, and the relationship between the resin products does not damage the back surface of the thin substrate. Especially effective when using liquid crystal. According to the invention described in the eleventh aspect of the patent application, thermal imaging is not performed on, for example, a thin-layer substrate to be heat-treated, and it is possible to perform the next project or the like (including the storage operation of the cassette case toward the stackable substrate). Transfer (transfer). According to the invention set forth in claim 12, it is possible to achieve uniform placement support by a thin substrate, and a stable transfer posture can be obtained. According to the invention of the first aspect of the invention, the temperature of the thin-layer substrate taken out from the first processing unit is different from the normal temperature, and the thermal engineering can be suppressed to the next project. Second project transfer. As long as the invention described in claim 14 of the patent application, a glass substrate which causes thermal imaging problems can be obtained with a high effect. According to the invention described in the fifteenth aspect of the patent application, the thin layer of the-21-(16) 1259551 substrate is subjected to heat treatment such as drying to a high temperature of, for example, 200 to 250 ° C, which causes a large temperature difference from the normal temperature. In the case of the case, thermal imaging can also be suppressed as much as possible. The terms and descriptions used herein are for describing one embodiment of the invention, and the invention is not limited thereto. As long as it is within the scope of the patent application scope of the present invention, it is also possible to change the relevant design without departing from the spirit of the invention.

【圖式簡單說明】 第1圖是表示在作爲薄層基板的玻璃基板面，製造形 成有薄膜電晶體等的液晶顯示的電氣式驅動電路的液晶模 組的一般陣列製造工程的一部分的流程圖。 第2圖是表示應用有關本發明的薄層基板移載用吸附 墊片的薄層基板製造裝置的一部分的外觀圖。 第3圖是手部的構造圖，（a)爲平面圖、（b)爲側面圖。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flow chart showing a part of a general array manufacturing process of a liquid crystal module in which an electric drive circuit for forming a liquid crystal display such as a thin film transistor is formed on a glass substrate surface of a thin layer substrate. . Fig. 2 is an external view showing a part of a thin-layer substrate manufacturing apparatus to which the adsorption pad for thin-layer substrate transfer of the present invention is applied. Fig. 3 is a structural view of the hand, (a) is a plan view, and (b) is a side view.

第4圖是吸引墊片的構造圖，（a)爲側面斷面圖、（b)舄 平面圖、（c)爲部分放大圖、（d)爲整體立體圖。 第5圖是表示吸引墊片變形例的構造圖，（a)爲側面_ 面圖、（b)爲平面圖、（C)爲整體立體圖。 第6圖是表7Γ：按需要重複工程P1〜P7，而形成在玻王离 基板上的一部分的薄膜電晶體構成圖之一例，（a)爲斷面 圖、（b)爲表示發生熱成像狀態的部分放大圖。 〔圖號說明〕 101 : 閘極電極 -22- (17) 1259551 102： 閘極絕緣膜 103： 非晶質矽層 104： n +非晶質矽層 105： 保護膜 106： 源極（或汲極）電極 107： 透明畫素電極 110： 捲曲 1 ： 烘乾室 2 ： 曝光室 3 ： 基板移載裝置 4 ： 輸送機裝置 5 ： 卡匣 6 ： 玻璃基板 30 ： 移載機械人 3 1: 基部 3 2 ： 引導用柱體 33 ： 昇降部 34 ： 第一支臂 35 ： 第二支臂 3 6 ： 驅動源 3 7 ： 手部 3 10： 驅動源 1 a * 窗口 4 1: 輸送機Fig. 4 is a structural view of the suction pad, (a) is a side sectional view, (b) is a plan view, (c) is a partial enlarged view, and (d) is an overall perspective view. Fig. 5 is a structural view showing a modification of the suction pad, wherein (a) is a side view, (b) is a plan view, and (C) is an overall perspective view. Figure 6 is a table 7: an example of a thin film transistor structure formed by repeating the works P1 to P7 as needed on the substrate, (a) is a sectional view, and (b) is a thermal imaging. A partial enlarged view of the state. [Description of the figure] 101 : Gate electrode-22- (17) 1259551 102: Gate insulating film 103: Amorphous germanium layer 104: n + amorphous germanium layer 105: Protective film 106: Source (or Electrode 107: transparent pixel electrode 110: curl 1 : drying chamber 2 : exposure chamber 3 : substrate transfer device 4 : conveyor device 5 : cassette 6 : glass substrate 30 : transfer robot 3 1: base 3 2 : Guide cylinder 33 : Lifting unit 34 : First arm 35 : Second arm 3 6 : Drive source 3 7 : Hand 3 10 : Drive source 1 a * Window 4 1: Conveyor

-23- (18)1259551 4 11: 4 12： 3 70 ： 3 7 1、 7 1〜 3 7 10 3 7 11 3 72 1 9 1、 7 11： 7 12: 713 ： 714 ： 7 15： 716 ： 7 175 7 15a 旋 轉 軸 滾 輪 基 部 3 72 ： 指 狀 部 7 4 ： 吸 引 用 墊片 、3720 ： 溝 、3712 ： 吸 入 配 管 、3722 ： 吸 入 配 管 92 ： 感 應 器 側 壁 部 底 部 吸 引 孔 基 部 側 壁 刖 端 側 壁 連 結 部 : 突 起 刖 端 丄山 m 面-23- (18)1259551 4 11: 4 12: 3 70 : 3 7 1 , 7 1~ 3 7 10 3 7 11 3 72 1 9 1 , 7 11: 7 12: 713 : 714 : 7 15: 716 : 7 175 7 15a Rotary shaft roller base 3 72 : Finger 7 4 : Suction spacer, 3720: Groove, 3712 : Suction piping, 3722 : Suction piping 92 : Sensor side wall bottom suction hole base side wall side wall connection Department: Protruding the end of the mountain

-24-twenty four

Claims (1)

!259551 Γ: 卜 · i i- . rk' ； : j X :―‘； ^ " 5 (1) 拾、申請專利範圍 第92 1 0 1 5 03號專利申請案 中文申請專利範圍修正本 民國94年8月23曰修正 1 · 一種薄層基板移載用吸附墊片，乃屬於吸附薄層基 板的薄層基板移載用吸附墊片，其特徵爲·· 以具環狀的側壁部的有底筒體所構成，該筒體是在底 部的一部分形成吸引孔，前述側壁部乃爲前端形成尖窄的 錐狀。 2 ·如申請專利範圍第1項所記載的薄層基板移載用吸 附墊片，其中，側壁部乃爲外周面側形成錐狀。 3 ·如申請專利範圍第1項所記載的薄層基板移載用吸 附墊片，其中，側壁部的前端端面的徑向尺寸爲〇 . 1 mm〜 0 · 5 mm 〇 4 .如申請專利範圍第3項所記載的薄層基板移載用吸 附墊片，其中，側壁部的前端端面的徑向尺寸爲〇.2mm。 5 .如申請專利範圍第1項至第4項的任一項所記載的薄 層基板移載用吸附墊片，其中，側壁部是由吸引孔側的小 徑基部側壁、和前端側的大徑前端側壁、和連結基部側壁 與前端側壁的連結部所構成，前述前端側壁乃爲與前述連 結部連結的近傍部分的壁厚尺寸爲〇 · 5 m m〜1.0 m m。 6 .如申請專利範圍第5項所記載的薄層基板移載用吸 附墊片，其中，連結部的壁厚尺寸爲〇.5mm〜1.0mm。 7.如申請專利範圍第1項至第4項的任一項所記載的薄 1259551 (2) 層基板移載用吸附墊片，其中，側壁部具有圓形。 8.如申請專利範圍第1項至第4項的任一項所記載的薄 層基板移載用吸附墊片，其中，在側壁部的內徑側形成等 徑’且在周方向成爲等間隔的位置形成複數個突起。 9 ·如申請專利範圍第8項所記載的薄層基板移載用吸 附墊片，其中’突起的前端相對於側壁部的前端，是設定 爲等局的位置或較低。 1 0 ·如申請專利範圍第i項至第4項的任一項所記載的 薄層基板移載用吸附墊片，其中，筒體是由具耐熱性的樹 脂製品所形成。 11·一種薄層基板移載裝置，其特徵爲具備有·· 載置薄層基板的手部、和露出而設在該手部的上面的 申請專利範圍第1至10項之任一項所記載的薄層基板移載 用吸附墊片、和可改變前述手部位置的驅動部。 1 2·如申請專利範圍第11項所記載的薄層基板移載裝 置，其中，在手部分散配置複數個薄層基板移載用吸附墊 片。 1 3 · —種薄層基板製造方法，其特徵爲·· 在以互相偏離塗佈光阻劑材的複數枚薄層基板平行狀 地配置的狀態施行乾燥光阻劑材的烘乾處理的烘乾室，與 以互相偏離在烘乾室被烘處理的複數枚薄層基板平行狀地 配置的狀態施行曝光處理的曝光室之間，配置申請專利範 圍第11或12項所記載的薄層基板移載裝置，一枚載置在在 烘乾室被烘乾所處理的薄層基板並交接到曝光室，連續施 -2 - 1259551 (3) 行烘乾處理和曝光處理。 1 4 .如申請專利範圍第1 3項所記載的薄層基板製造方 法，其中，薄層基板乃爲玻璃基板。!259551 Γ: 卜·i i- . rk' ; : j X :―'; ^ " 5 (1) Picking up, applying for patent scope 92 1 0 1 5 03 Patent application Chinese application patent scope amendments Amendment 1 of August, 1994. 1 · An adsorption pad for thin-layer substrate transfer is a thin-layer substrate transfer adsorption pad for adsorbing a thin-layer substrate, and is characterized by a ring-shaped side wall portion The bottomed cylindrical body is formed with a suction hole formed in a part of the bottom portion, and the side wall portion has a tapered shape at the front end. (2) The suction pad for transferring a thin-film substrate according to the first aspect of the invention, wherein the side wall portion has a tapered shape on the outer peripheral surface side. The suction pad for thin-film substrate transfer according to the first aspect of the invention, wherein the front end surface of the side wall portion has a radial dimension of 〇. 1 mm to 0 · 5 mm 〇4. The adsorption pad for thin-film substrate transfer according to the third aspect, wherein the front end surface of the side wall portion has a radial dimension of 〇.2 mm. The suction pad for transferring a thin-layer substrate according to any one of the first to fourth aspect of the invention, wherein the side wall portion is a small-diameter base side wall on the suction hole side and a front end side The front end side wall and the connecting portion between the connecting base side wall and the front end side wall, wherein the front end side wall has a thickness of about 5·5 mm to 1.0 mm in a proximal portion of the connecting portion. The suction pad for transferring a thin-film substrate according to the fifth aspect of the invention, wherein the thickness of the connecting portion is 〇5 mm to 1.0 mm. 7. The thin 1259551 (2) layer substrate transfer loading pad according to any one of claims 1 to 4, wherein the side wall portion has a circular shape. The adsorption pad for transferring a thin-layer substrate according to any one of the first to fourth aspects of the present invention, wherein an equal diameter is formed on the inner diameter side of the side wall portion and is equally spaced in the circumferential direction. The position forms a plurality of protrusions. The suction pad for thin-film substrate transfer according to the eighth aspect of the invention, wherein the tip end of the protrusion is set to a position equal to or lower than the tip end of the side wall portion. The adsorption pad for thin-layer substrate transfer according to any one of the items of the present invention, wherein the cylindrical body is formed of a heat-resistant resin product. A thin-layer substrate transfer device characterized by comprising: a hand for mounting a thin-layer substrate; and any one of claims 1 to 10 which is exposed and provided on the upper surface of the hand The described adsorption pad for transferring a thin layer substrate and a driving portion that can change the position of the hand. The thin-layer substrate transfer device according to the eleventh aspect of the invention, wherein the plurality of thin-layer substrate transfer adsorption pads are disposed in the hand portion. A method for producing a thin-layer substrate, characterized in that a drying process of drying a photoresist material is performed in a state in which a plurality of thin-layer substrates which are offset from each other with a photoresist material are arranged in parallel In the dry chamber, the thin-layer substrate described in claim 11 or 12 is disposed between the exposure chambers which are exposed to each other in a state in which the plurality of thin-layer substrates which are baked in the drying chamber are arranged in parallel with each other. The transfer device, a thin substrate placed on the drying chamber is processed and delivered to the exposure chamber, and continuously subjected to 2 - 1259551 (3) drying and exposure treatment. The method for producing a thin-layer substrate according to claim 13, wherein the thin-layer substrate is a glass substrate.
TW092101503A 2002-07-29 2003-01-23 Manufacturing method of thin-layer substrate, thin-layer substrate transfer device, and thin-layer substrate transfer absorption pad TWI259551B (en)

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