1253476 修正 89114392 五、發明說明（1) 本案係有關於一種在真空處理系統中處理複數個基板 之方法’尤其關於一種在預熱過程中即啟動濺鍍反應室通 水氣功能之方法。 目雨大部份的液晶顯示器之液晶單元包括了一透明導 電電極’其可提供作為施加電壓於液晶單元上之電極，同 時又可以讓可見光穿透。一般來說，較常使用之材料為氧 化銦錫（Indium-Tin Oxide， I TO )，其通常是利用物理 氣相沈積法而沈積於玻璃基板上，其中以濺鍍方式居多。 在錢鑛反應室内，所提供之材料可與氧氣反應以形成 IT0。一般而言，錢鍍過程包括基板的加熱以及在加熱過 之基板上沈積I τ 0。在濺鍍之前，該基板可在一分離的反 應室内先預熱。 傳統上，以非連續方式要濺鍍17〇於第一片基板時， 在進入濺鍍反應室後先通水氣3 〇秒，以達到製程的穩定 性’再進行I T 0的沈積。然而，此方式會造成第一片和之 後以連續方式進行製程的基板之間的差異，必且須多花費 沈積I TO於第一片基板前所需之水氣穩定時間，而無法有 效增加機台的利用率。 職是之故，本案鑑於習知技術之缺失，乃經悉心試驗 與研究並一本鍥而不捨之精神，終創作出本案『一禮在真 空處理系統中處理複數個基板之方法』。以下為本案之簡 要說明。 W " 本案之主要目的係在於提供一種在真空處理系統中處 理複數個基板之方法。該方法之步驟包括（a)提供一真空1253476 Revision 89114392 V. INSTRUCTIONS (1) This is a method of processing a plurality of substrates in a vacuum processing system, particularly with respect to a method of initiating a function of water vapor in a sputtering reaction chamber during preheating. The liquid crystal cell of most liquid crystal displays includes a transparent conductive electrode 'which can provide an electrode for applying a voltage to the liquid crystal cell while allowing visible light to pass through. In general, the more commonly used material is Indium-Tin Oxide (ITO), which is usually deposited on a glass substrate by physical vapor deposition, in which sputtering is dominant. In the money ore reaction chamber, the material provided can react with oxygen to form IT0. In general, the money plating process involves heating the substrate and depositing I τ 0 on the heated substrate. The substrate can be preheated in a separate reaction chamber prior to sputtering. Conventionally, when a first substrate is sputtered in a discontinuous manner, water vapor is passed for 3 seconds after entering the sputtering reaction chamber to achieve process stability, and deposition of I T 0 is performed. However, this method causes a difference between the first sheet and the substrate which is subsequently processed in a continuous manner, and it is necessary to spend more time to deposit the water vapor stabilization time required before the first substrate, and cannot effectively increase the machine. Utilization of the station. For the sake of his position, this case, in view of the lack of prior art, was carefully tested and researched with a spirit of perseverance, and finally created the “method of handling multiple substrates in a vacuum processing system”. The following is a brief description of the case. W " The primary purpose of the present invention is to provide a method of processing a plurality of substrates in a vacuum processing system. The steps of the method include (a) providing a vacuum
1253476 年月曰 修正Monthly revision of 1253476
__案號891143⑽ 五、發明說明（2) 處理系統，其包括一負載室、一預熱反應室、一製程反废 室和用於在糸統内運送基板之兩個或以上的基板移载機· (b)載入第一片基板至該負載室；（c)轉移該第一片基板至 第一基板移載機；（d)運送該第 > 片基板和一基板移載機 至該預熱反應室之中先預熱；（e )在預熱該第一片基板至 一特定時間後，提供一控制訊號至該製程反應室，以便進 行製程所需材料之準備；（f )當預熱該第一片基板至一預 定時間時’將該第一片基板移至該製程反應室，以進行製 程反應；以及（g)自該製程反應室移出該基板。此外，本 案之方法更包括重複步驟（b)，（c)，（d), (f)和（g)以用於處 理其他基板。 根據本案之一構想，該控制訊號之產生和傳送可藉由 連接至該預熱反應室之電腦來控制。 該真空處理系統可以為一種用於沈積氧化銦錫 (Indium-Tin Oxide， ITO)、其他金屬或絕緣材料之濺 鍍裝置。較佳地，該真空處理系統為氧化銦錫〇ndium一 Tln Oxide, IT0)濺鍍機台，可在預熱過程中即啟動該濺 鑛機台之通水氣功能’卩節省沈積氧化銦一片基板 所需之水氣穩定時間。 在本案之另一較佳實施例 提供一真空處理系統，其包括 室、一負載室、一卸載室、圍 偶合之兩個或以上的製程反應 板的兩個或以上之基板移栽機 ’该方法之步驟包括：（a ) 一中央緩衝室、一預熱反應 =5亥中央緩衝室配置並與其 至、和用於在系統内運送基 (b)栽入第一片基板至該__Case No. 891143 (10) V. Description of the Invention (2) A processing system comprising a load chamber, a preheating reaction chamber, a process anti-waste chamber, and two or more substrate transfer substrates for transporting substrates within the system (b) loading the first substrate to the load chamber; (c) transferring the first substrate to the first substrate transfer machine; (d) transporting the substrate substrate and a substrate transfer machine to Preheating the preheating reaction chamber; (e) providing a control signal to the process chamber after preheating the first substrate for a specific time to prepare the material required for the process; (f) The first substrate is moved to the process chamber for a process reaction when the first substrate is preheated for a predetermined time; and (g) the substrate is removed from the process chamber. In addition, the method of the present invention further includes repeating steps (b), (c), (d), (f) and (g) for processing other substrates. According to one aspect of the present invention, the generation and transmission of the control signal can be controlled by a computer connected to the preheating reaction chamber. The vacuum processing system can be a sputtering apparatus for depositing Indium-Tin Oxide (ITO), other metals or insulating materials. Preferably, the vacuum processing system is an indium tin antimonide ndium-Tln Oxide, IT0) sputtering machine, which can start the water vapor function of the sputtering machine during the preheating process. The moisture stabilization time required for the substrate. Another preferred embodiment of the present invention provides a vacuum processing system including a chamber, a load chamber, an unloading chamber, and two or more substrate transplanters for two or more process reaction plates. The method comprises the steps of: (a) a central buffer chamber, a preheating reaction = 5 Hz central buffer chamber configuration and the same, and for transporting the substrate in the system (b) into the first substrate to the
1253476 案5虎 89114392 年 用 日 修正 五、發明說明（3) 負載室；（c)轉移該第一片基板至一基板移載機；（d)運送 该第一片基板和該基板移载機至該預熱反應室之中先預 熱，（e )在預熱该弟一片基极至^一特定時間後，提供〆控 制讯號至一預定進入的製程反應室，以便先進行製程所需 材料=準備；（f )當預熱該第_片基板至一預定時間時， 將該第一片基板移至該預定進入的製程反應室，以進行製 程反應；以及（g)運送該已完成製程之第一片基板和該基 板移載機至該卸載室。 此外，本案之方法更包括重複步驟（b)至（g)，以用於 同時處理兩個或以上的基板。在每個製程反應室完成第一 片基板之製程後，重複步驟（b)，（c)，（d)，（；〇和（2)，以用 於處理其他的基板。 本案得藉由下列圖式及詳細說明，俾得一更深入之了 第圖為本案之真空處理系統的剖面上視示意圖。 以上圖式之主要構件如下： 基板存放或等候區 2 :負載室 預熱反應室 /， 、 w &池― 41，42,4 3 :製程反應室 ^ 卸載室 。 ,.± 6 :中央緩衝室1253476 Case 5 Tiger 89114392 Year Correction V, Invention Description (3) Load chamber; (c) Transfer the first substrate to a substrate transfer machine; (d) Transport the first substrate and the substrate transfer machine Preheating to the preheating reaction chamber, (e) providing a enthalpy control signal to a predetermined process chamber after preheating the base to a predetermined time for the process to be performed first Material = preparation; (f) when the first substrate is preheated for a predetermined time, the first substrate is moved to the predetermined process chamber to perform a process reaction; and (g) the delivery is completed The first substrate of the process and the substrate transfer machine are transferred to the unloading chamber. Further, the method of the present invention further includes repeating steps (b) to (g) for simultaneously processing two or more substrates. After the process of the first substrate is completed in each process chamber, steps (b), (c), (d), (; 〇 and (2) are repeated for processing other substrates. The case is as follows Schematic and detailed description, a more in-depth view of the vacuum processing system of the present case is a cross-sectional view of the above diagram. The main components of the above diagram are as follows: substrate storage or waiting area 2: load chamber preheating reaction chamber /, , w & pool - 41, 42, 4 3 : process chamber ^ unloading chamber. , ± 6 : central buffer chamber
本案提供了一鍤A ^ # . 在真二處理系統中處理複數個基板之 方法’八可應用在沈積氧 . ττπ ^ ^ yL A τ貝礼化銦錫（Indium-Tin Oxide, ITO)、其他金屬或絕絡 +。u^ 緣材料之濺鍍裝置，但並不限於 此。以丨1 U為例，目益士 神的”同ϋ f i 1 .、 上所存在的錢鍍沈積裝置有所 δ月的 Η孕由（1 η 1 1 n e V丨备从 糸、、先’其中基板是沿著線狀或U型管This case provides a method of processing A ^ # in a true two processing system 'eight can be applied to the deposition of oxygen. ττπ ^ ^ yL A τ Indium-Tin Oxide (ITO), other Metal or entanglement +. u^ The sputtering device of the edge material, but is not limited thereto. Taking 丨1 U as an example, the "Peer-in-the-Four" of the "Essence of the 镀1", the existence of the money deposition device on the δ month of pregnancy (1 η 1 1 ne V丨 from 糸, first] Where the substrate is along a line or U-tube
第8頁 _案號891〗4加9 1253476 曰 修正 年 月 五、發明說明（4) 路移動通過不同的製程反應室；以及所謂的，，星盤狀 UljSter)n系統，其中複數個製程反應室係圍繞著中央 衝=配置。為清楚瞭解本案之特徵和構想，以後者之系缔 為貫例來作說明。 、4 睛苓閱第一圖，該濺鍍反應室包括一基板存放或等候 二―、一負載室2、一預熱反應室3、一卸載室5、一中央 f至、圍繞該中央緩衝室6配置並與其 ^室41，42,43、以及用於在系統内運送該基板之基板；； 首先將四片基板依序自基板存放或等候區1載入至 =室2’，個別將此四片基板轉移至基板移丄至以 担仰土反至η玄預熱反應室3之中，先預熱一特定時間後， 谁二二ί制！1號至預定進入的製程反應室41，42或43，以 和；^^::並使其達到穩定狀態。該控制訊號之產生 可精由連接至預熱反應室3之電腦來控制。當預熱 ‘ i:至以2:時間時’將該基板移至該預定進入的製程 送：釦# F R行1T〇的沈積。最後再將已沈積ΙΤ〇的基板運 每個制^ /之後’以連續方式將以預熱之基板運送至 母们衣耘反應室，以進行濺鍍。 秒]:假5又製紅中的預熱時間設定為X秒（如設為9 0 反應官:以ΐί續進行製程反應的第一片基板（每個製程 到程）送入預熱反應室中。當預熱時間計時 板預Π由預熱反應室之電腦送出一控制訊號至該基 ' 的2程反應室，以先行通水氣（依製程條Page 8 _ Case No. 891〗 4 plus 9 1253476 曰 Revised year 5, invention description (4) Road moves through different process chambers; and so-called, star-shaped UljSter) n system, in which multiple process reactions The chamber is centered around the central punch = configuration. In order to clearly understand the characteristics and ideas of the case, the latter are set forth as examples. 4, the first view, the sputtering reaction chamber includes a substrate storage or waiting for two, a load chamber 2, a preheating reaction chamber 3, an unloading chamber 5, a central f to, around the central buffer chamber 6 arranging and equipping the chambers 41, 42, 43 and the substrate for transporting the substrate in the system; first loading the four substrates sequentially from the substrate storage or waiting area 1 to the = chamber 2', individually The four substrates are transferred to the substrate and moved to the soil to the η Xuan preheating reaction chamber 3. After preheating for a certain period of time, whoever makes it! From the 1st to the scheduled process chamber 41, 42 or 43, to and ^^:: and bring it to a steady state. The generation of the control signal can be controlled by a computer connected to the preheating reaction chamber 3. When preheating 'i: to 2: time', the substrate is moved to the predetermined incoming process: deduction # F R row 1T〇 deposition. Finally, the substrate on which the germanium has been deposited is transported to the mother's cell reaction chamber in a continuous manner to perform sputtering. Seconds:: The preheating time in the fake 5 red is set to X seconds (if set to 9 0): The first substrate (each process to the process) that continues the process reaction is sent to the preheating reaction chamber. When the preheating time chronograph is pre-twisted, a control signal is sent from the computer of the preheating reaction chamber to the 2-way reaction chamber of the base to pass the water gas first (depending on the processing strip)
第9頁 1253476 案號 89114392 月 修正 五、發明說明（5) 件）’使反應室達到穩定狀態。該時間值γ為内建設定值 但可作調整（如設為60秒）。至第一片基板預熱完後即經 過時間T。當第一片基板被送入至該預定進入的製程反應 室時’通入水氣至製程反應室的時間為χ_γ+ AT秒（包括 傳輸和等待的時間），因此可直接進行沈積，而不需經過 穩定時間（約3 0秒）才進行丨τ〇的沈積。在每個製程反應 室完成第一片基板之製程後，重複上述步驟但省略由預熱 反應室送出一控制訊號至該基板預定進入的濺鍍室之步 驟，以用於處理其他的基板。 本案所提供之方法可應用於在以非連續方式濺鍍之每 個製私反應室’可節省第一片基板沈積前所需之穩定時間 而直接進行濺鍍和沈積，以增加機台之利用率，並減少第 一片和之後連續進行製程之每片間的差異。 是以’本案得由熟悉本技藝之人士任施匠思而為諸般 修飾’然皆不脫如附申請專利範圍所欲保護者。Page 9 1253476 Case No. 89114392 Month Amendment V. Description of invention (5)) 'Stand up the reaction chamber. The time value γ is a built-in set value but can be adjusted (for example, set to 60 seconds). The time T is elapsed after the first substrate is preheated. When the first substrate is fed into the predetermined process chamber, the time for introducing moisture into the process chamber is χ_γ+ AT seconds (including the time of transmission and waiting), so that deposition can be performed directly without The deposition of 丨τ〇 was carried out after a stabilization time (about 30 seconds). After the process of the first substrate is completed in each process chamber, the above steps are repeated but the step of sending a control signal from the preheating reaction chamber to the sputtering chamber to which the substrate is intended to enter is omitted for processing other substrates. The method provided in the present application can be applied to directly perform sputtering and deposition in each of the private reaction chambers sputtered in a discontinuous manner to save the stabilization time required before deposition of the first substrate, thereby increasing the utilization of the machine. Rate, and reduce the difference between each piece of the first piece and the subsequent continuous process. It is based on the fact that the case has been modified by those who are familiar with the art and is not intended to be protected by the scope of the patent application.
第10頁 1253476 _案號89Π4392_年月曰 修正_ 圖式簡單說明 圖式簡單說明 弟一圖為本案之真空處理糸統的剖面上視示意圖。 以上圖式之主要構件如下： 1 :基板存放或等候區 2 :負載室 3 :預熱反應室 41，42, 4 3 :製程反應室 5 :卸載室 6 :中央緩衝室Page 10 1253476 _ Case No. 89Π4392_年月曰 修正 Amendment _ Simple description of the drawing Simple description of the drawing The first figure of the vacuum processing system of this case is a schematic view of the section. The main components of the above diagram are as follows: 1: substrate storage or waiting area 2: load chamber 3: preheating reaction chamber 41, 42, 4 3: process reaction chamber 5: unloading chamber 6: central buffer chamber