TWI249507B - Micro structure banding method - Google Patents

Micro structure banding method Download PDF

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TWI249507B
TWI249507B TW93107297A TW93107297A TWI249507B TW I249507 B TWI249507 B TW I249507B TW 93107297 A TW93107297 A TW 93107297A TW 93107297 A TW93107297 A TW 93107297A TW I249507 B TWI249507 B TW I249507B
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Taiwan
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micro
joining
component
low
metal film
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TW93107297A
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Chinese (zh)
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TW200531923A (en
Inventor
Shiou-Wei Yang
Pei-Pei Chen
Jau-Ching Lin
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Asia Vital Components Co Ltd
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Abstract

There is provided a micro structure banding method, which is used to band a micro structure with a banding surface to a work-piece. The micro structure banding method includes first plating a metal film of low melting point on the banding surface; next adhering the work-piece on the metal film of low melting point; and then heating and melting the metal film of low melting point into molten state and applying a force capable of making the banding surface close to the work-piece on the micro structure and the work-piece, thereby securely banding the micro structure to the work-piece.

Description

1249507 玖、發明說明: 【發明所屬之技術領域】 本發明是有關於一種接合方法,特別是指一種應用於 微型構件上之接合方法。 5 【先前技術】 微系統技術是指製造體積微小、具有功能且自成系統 之結構的技術,一般如微機電系、统 (Micro-Electro-Mechanical System,MEMS)、微機光系統 (Micro-Optic-Mechanical System,MOMS),以及微光機電 1〇 系統(Micro-Electro-Mecha-Optical System,MEMOS)等,均 屬於微系統技術之領域。由於微系統可廣泛地應用於資訊 電子、光電通訊、精密機械、環保監控、醫療生化等領域, 並可大幅提昇各個領域之技術水準,因此是現今科技發展 之關鍵技術領域,而其中又以釐米(mm)級至微米(//m)級 15 之微型結構的製造技術扮演極為重要的角色。 然而,如欲運用現有之接合方式,將微型構件接合形 成微型結構時,則因技術困難度及製造成本極高,而成為 微系統技術的一大障礙。一般微型結構之微型構件間的接 合方法,包含下列幾種: 2〇 1)高分子黏膠接合:其主要是藉由高分子黏著劑之黏 著效果達到接合該等微型構件之功效,具有簡單、快速等 優點,但由於難以控制塗佈之均勻度,以及高分子黏著劑 之黏性造成塗佈後存在一定厚度等問題,且對於應用溫度 以及化學藥劑之反應較為敏感,因此實施於微米級之微型 1249507 構件接合上具有接合界面長久使用之可靠度問題。 2)擴散接合(diffusion banding):其接合方法則是利用 高壓高溫加熱使待接合之構件於接觸部分形成融熔狀 態,同時施加以壓力使該待接合之構件相互緊迫,並持績 5 一段相當長之時間,使該待接合之構件之材料彼此相互擴 散而達到接合之效果。其優點在於因接觸部分是在融熔狀 態或接近融熔狀態時進行彼此擴散,故退火後接觸部分不 會產生明顯的接合界面,且接觸部分接合缺陷較少,使得 接合強度較佳。另一方面,由於接合過程中該等構件之材 10 料是在融熔狀態或接近融熔狀態進行擴散接合,因此接合 後之結構能承受低於該材料熔點之高溫環境,有利於所接 合形成結構之應用。 然而由於擴散接合的過程中需在融熔狀態或接近融 熔狀態並施以相當大之力量,因此當待接合者係微形構件 15 時,施壓容易造成該等待接合之微型構件變形,甚至喪失 原先設計之功能,例如微型流道斷面之改變,便會使得整 體流道系統效率受影響,甚至失效;因此難以適用於微形 構件與其他工件間之接合,特別是微型構件與微型構件間 之接合,縱算其材料如彈性模數等的材料常數再大,由於 20 該等微型構件之尺寸均相當細小,導致該等微型構件之結 構強度仍相當有限,而難以實際應用或者在信賴度上存有 高度的疑慮,故微米級之微型構件無法以此方法有效地達 成接合之目的,或者至少其良率甚低。同時,由於微型構 件不易施以機械硏磨使表面粗糙降低,使得施加予該兩微 1249507 型構件相互緊迫之壓力無法降低。因此高融熔溫度(以銅為 例達900°C以上)、接合時間長、接合壓力大、低表面粗糙 度等需求,造成此方法在微型構件接合量產不易。 3)擴散軟焊:其接合方法是先於待接合構件其中之一 5 的接合面上蒸鍍或濺鍍一層低熔點金屬,而後將另一構件 疊合於其上,並以治具固定施壓在高真空爐加溫進行接 合,使該低熔點金屬擴散至該等微型構件内與構件表面金 屬反應形成反應層,因此具有低溫接合,且於接合後能應 用於高溫環境之優點。然而,由於以此方法進行微型構件 10 之接合時,對於微型構件之接合面的平整度,以及蒸鍍一 層低熔點金屬之技術要求相當高,不論是製程之環境控 制,或者是該低熔點金屬之大面積蒸鍍或濺鍍厚度均勻度 相當難以控制,因此導致以此方法進行該等微型構件接合 之效果相當不穩定。再者,與擴散接合法一樣,以此方法 15 接合微型構件對表面粗糙度的要求甚高,同時大面積批製 問題大,造成本居高不下。 因此現有之方法不是會破壞微型構件之初始結構,便 是其接合方法成本與技術難度高,以致於難以廣泛地運用 於微型構件之接合,達到大量且低成本之製造優勢。 20 【發明内容】 本發明之主要目的是在提供一種能應用於微型結構 製作之微型構件接合方法。 本發明之另一目的是在提供一種技術困難度較低之 微型構件接合方法。 1249507 本發明之又一目的是在提供一種製作成本較低之微 型構件接合方法。 本發明之再一目的是在提供一種能大量製造之微型 構件接合方法。 5 本發明係一種微型構件接合方法,用以將一具有接合 面之微型構件與工件接合,該微型構件接合方法包含下列 步驟: a)鍍設低熔點金屬薄膜於該待接合微型構件之接合面 上; 10 b)將該待接合工件貼靠於該低熔點金屬薄膜上;及 c)加熱使該低、熔點金屬薄膜呈熔融狀態,並施加一使 該接合面與該工件相互靠近之力量於該微型構件及該工 件上。 而當本發明應用於將兩分別具有接合面之微型構件 15 相接合時,該微型構件接合方法則包含下列步驟: a) 鍍設一低熔點金屬薄膜於該等待接合微型構件其中 之一的接合面上; b) 將另一待接合微型構件的接合面貼靠於該低熔點金 屬薄膜上;及 20 c)加熱使該低熔點金屬薄膜呈熔融狀態,並施加一使 該等接合面相互靠近之力量於該等微型構件上。 本發明之功效是能以較低之技術困難度與製作成本 大量進行微型構件與其他工件,以及微型構件與微型構件 間之接合,並達到緊密接合之良好效果。 1249507 【實施方式】 、特點與功效,在 有關本發明之前述及其他技術内容 乂下配σ參考圖式之二較佳實施例的詳細說明中,將可清 楚的明白。在提出詳細說明之前,要注意的是,在以下的 敘述中’類似的元件是以相同的編號來表示。 如圖1所不,本發明微型構件接合方法之第一較佳實1249507 发明Invention Description: TECHNICAL FIELD The present invention relates to a bonding method, and more particularly to a bonding method applied to a micro component. 5 [Prior Art] Microsystem technology refers to the technology of manufacturing a small, functional and self-contained system, such as Micro-Electro-Mechanical System (MEMS) and Micro-Optic. -Mechanical System, MOMS), and Micro-Electro-Mecha-Optical System (MEMOS) are all areas of microsystem technology. Because microsystems can be widely used in information electronics, optoelectronic communication, precision machinery, environmental monitoring, medical biochemistry, etc., and can greatly enhance the technical level in various fields, it is a key technical field in the development of today's technology, and in centimeters Manufacturing techniques for microstructures ranging from (mm) to micrometer (//m) 15 play an extremely important role. However, if the existing joining method is used to join the micro-components into a micro-structure, it is a major obstacle to micro-system technology due to technical difficulties and high manufacturing costs. The bonding method between the micro-components of the general micro structure includes the following: 2) 1) Polymer adhesive bonding: the adhesive effect of the polymer adhesive is mainly used to achieve the effect of joining the micro-components, and is simple, Fast and other advantages, but due to the difficulty in controlling the uniformity of coating, and the viscosity of the polymer adhesive, which causes a certain thickness after coating, and is sensitive to the application temperature and chemical reaction, it is implemented on the micron scale. The miniature 1249507 component joint has the reliability problem of long-term use of the joint interface. 2) Diffusion banding: the joining method is to use high-pressure high-temperature heating to make the member to be joined into a molten state at the contact portion, and at the same time apply pressure to make the members to be joined pressed against each other, and the performance is 5 For a long time, the materials of the members to be joined are mutually diffused to achieve the bonding effect. This has the advantage that since the contact portions are diffused to each other in a molten state or near a molten state, the contact portion after annealing does not have a significant joint interface, and the joint portion has fewer joint defects, so that the joint strength is better. On the other hand, since the material of the members is diffused and joined in a molten state or near a molten state during the joining process, the joined structure can withstand a high temperature environment lower than the melting point of the material, which is advantageous for the joint formation. Application of the structure. However, since the diffusion bonding is required to be in a molten state or close to a molten state and a considerable force is applied, when the member to be joined is the micro-member 15, the pressing is likely to cause deformation of the micro-member waiting to be joined, even Loss of the original design function, such as changes in the micro-channel profile, can affect the efficiency of the overall runner system, or even failure; therefore, it is difficult to apply to the joint between the micro-component and other workpieces, especially the micro-components and micro-components. In the case of the joint, the material constant of the material such as the elastic modulus is large, and since the dimensions of the micro-components are relatively small, the structural strength of the micro-components is still quite limited, and it is difficult to practically apply or trust. There are high levels of doubts about the degree, so micro-scale micro-components cannot effectively achieve the purpose of bonding in this way, or at least the yield is very low. At the same time, since the micro-members are not easily subjected to mechanical honing to reduce the surface roughness, the pressure applied to the two members of the Model 1249507 cannot be lowered. Therefore, the high melting temperature (in the case of copper, for example, 900 ° C or more), long bonding time, large bonding pressure, low surface roughness, etc., make the method difficult to mass-produce the micro-components. 3) Diffusion soldering: the bonding method is to deposit or sputter a layer of low melting point metal on the joint surface of one of the members to be joined, and then superimpose another member on it, and fix it with a fixture. The press is heated in a high-vacuum furnace to join, and the low-melting-point metal is diffused into the micro-components to react with the surface metal of the member to form a reaction layer, thereby having the advantages of low-temperature bonding and application to a high-temperature environment after bonding. However, since the bonding of the micro-members 10 is performed by this method, the flatness of the bonding faces of the micro-components and the technical requirements for vapor-depositing a low-melting-point metal are quite high, whether it is the environmental control of the process or the low-melting-point metal. The large-area evaporation or sputtering thickness uniformity is quite difficult to control, and thus the effect of joining the micro-components in this way is rather unstable. Moreover, as with the diffusion bonding method, the method of bonding the micro-components has a high surface roughness requirement, and the large-scale batching problem is large, resulting in a high level of residence. Therefore, the existing method does not destroy the initial structure of the micro-component, and the bonding method is costly and technically difficult, so that it is difficult to widely apply the bonding of the micro-components, achieving a large and low-cost manufacturing advantage. 20 SUMMARY OF THE INVENTION A primary object of the present invention is to provide a method of joining micro-components that can be applied to micro-structure fabrication. Another object of the present invention is to provide a method of joining a micro-component that is less technically difficult. Another object of the present invention is to provide a method of joining a micro-component that is relatively inexpensive to manufacture. A further object of the present invention is to provide a method of joining micro-components that can be manufactured in large quantities. 5 is a micro-component joining method for joining a micro-member having a joint surface to a workpiece, the method of joining the micro-component comprising the steps of: a) plating a low-melting-point metal film on the joint surface of the micro-component to be joined And b) heating the low-melting-point metal film to a molten state, and applying a force to bring the bonding surface and the workpiece closer to each other The micro-member and the workpiece. When the present invention is applied to the joining of two micro-members 15 each having a joint surface, the method of joining the micro-components comprises the following steps: a) plating a low-melting-point metal film on the joint of one of the waiting-joining micro-components. b) bonding the bonding surface of another micro component to be bonded to the low melting point metal film; and 20 c) heating to melt the low melting metal film and applying a bonding surface to each other The power is on these micro-components. The effect of the present invention is to enable a large amount of joining of the micro-components and other workpieces, as well as the micro-components and the micro-components, with a low degree of technical difficulty and production cost, and to achieve a good effect of tight joint. 1249507 [Embodiment] The detailed description of the preferred embodiment of the second embodiment of the present invention with reference to the above-mentioned and other technical contents of the present invention will be clearly understood. Before the detailed description is made, it is noted that in the following description, similar elements are denoted by the same reference numerals. As shown in FIG. 1, the first preferred embodiment of the method for joining the micro-components of the present invention

接合’在本實施例中,該微型構件i是—以銅為材質所製In the present embodiment, the micro-member i is made of copper.

之頂緣,而該等相鄰兩側壁13間隔為100em,藉由該底 板12與該等侧壁13能界定出複數槽道1〇。該工件2則為 一以鋼為材質所製成且厚度為2〇〇//m之蓋板,並具有一 與忒微型構件1之接合面11配合之待接合面21。因此當 该工件2接合於該微型構件i之側壁13遠離該底板12處 之接合面11上時,便能藉由該底板12、該等側壁13,以 及該工件2界定出一流道結構。 〜am ^壬一用度延伸、且高度為 忒接合面11則是形成於該等側壁1: L底板12,以及複 备100// m之側壁 13遠離該底板12 雖然在本實施例中,該微型構件1與該工件2均是以 鋼金屬為材質製成,但並非以此為限,該微型構件1與該 工件2不僅能分別以不同材質之金屬製成外,更能以包含 如石夕晶等其他半導體材質製成,關於該微型構件1與該工 件2之材料選擇容後再述。但須強調的是,如圖2及圖3 所示’在此是以兩片尺寸同樣為3cm X 3cm X 〇.25cm之 1249507 銅箔6、6’分別形成多數個上述之微型構件1與工件2,使 其得以大量批造,至於上述之微型構件1與工件2之數 目’則視各元件尺寸大小,以及如上述鋼落6、6,等所才& 5 用進行製作之材料的大小決定,在此雖舉面積為km X 3cm之銅箔6、6’為例,但非以此為限,當知其他如22。扭 X 26 cm,甚至以上之尺寸,也都能應用於本發明中。 如圖4所示,本發明微型構件接合方法包含下列步驟: 步驟100,如圖1至圖3所示,對該微型構件丄之該 10 接合面11及該工件2之該待接合面21進行表面處理。本 步驟是為了清潔該接合面U及該待接合面21,以避免因 該接合面11或該待接合面21受污染而影響接合效果;其 通常是以諸水,或者㈣化學溶·行清洗4本實施 15 例中’由於紐型構件!與缸件2均形成於以銅所製成 之該等射I 6、6,上’故本步驟是先以濃度在鄉到鄉 範圍内之硝酸溶液清洗該接合面與該待接合面21,再 以清水沖洗該接合面U與該待接合面21,最後使該接合 面11與該㈣合面21乾燥’並立即進行下-步驟。 步驟102 ’如圖1及圖$於- 圓5所不,鍍設一低熔點金屬薄 膜3於該微型構件1之接合㈣上。在本實施例中,該低 炼點金屬薄膜3之材質為踢金屬,並且是採用電鑛之方式 快速地沉積厚度之該低炫點金屬形成薄膜3於該銅 泊6(見圖2)之各該微型構件1之接合面U上。當秋,由 於該低溶點金屬薄膜3是用於烊接該微型構件!及該工件 2’故該低熔點金屬薄膜3之材質並不限定為錫金屬,其 20 1249507 也可以是錫銦合金、錫鉍合金及錫銅合金其中之一,以及 其他包含錫金屬之焊材,均能適用於本實施例中;同樣 地,该低炫點金屬薄膜3之厚度也非以7Am為限,由於 在本實施例中,該等側壁13高度1〇〇_,因此該低溶點 5 金屬薄膜3之厚度小於1()舞均具有相當良好之焊接效 果,亦即在不破壞微型結構的條件下達成良好的接合界 面,其中又以厚度為5//m至8/zm為佳。 在本實施例中,雖是以電鑛之方式將該低炫點金屬薄 膜3鑛設於該微型構件工之接合面^上,但並非以此方式 1〇 _限,其他如賤鑛及蒸鑛等能將該低熔點金属薄膜3沉積 於該接合面11上之方法’也都適用於本發明中。因此僅就 本步驟而言,只要能供該低㈣金屬薄膜3以電鍍、義, 以及热鍍等錄設方式沉積於其上之材料,均能作為製作該 微型構件1及該工件2之材料。 15 步驟104,如圖6所示,將該工件2之待接合面21貼 靠於該已鍵設於該微型構件以接合面21表面上之低溶點 金屬薄膜3遠離該微型構件丄側。在本實施例中,以熱壓 機(見圖7)將該微型構件!與該工件2加熱,同時施加力量 2〇 使該微型構件1與該工件2相互靠近,其對位方式則如圖 7及圖8所示。由於—般熱壓機5具有一供承載物品之下 熱壓板51 ’以及一與該下熱壓板51相對之上熱壓板52, 因此’配合圖2及圖3所示,在本發明中,為使該微型構 件1及,玄工件2正確對位,是先在各該下熱壓板51上標 記擺放記號53,例如圖中之”L”形記號。隨後將形成有該 5 10 15 20 1249507 =構件Λ及該工件2之㈣6、6’#合置放於鄰近該等 53^不處。再取—磁鐵54靠近該等形成有該微型構 、1及該工件2之㈣6、6,’使該磁鐵54吸引該等銅落 :、,,並使其等對齊,在本實施例中,該磁鐵54與各該 ' 同枚壬L形。最後再移開磁鐵54,由於該等形成 有該微型構件i及該卫件2之鋼荡6、6,僅是以其較薄之 侧邊貼靠於磁鐵54上,因此能在不移動該等㈣㈠,的The top edge of the adjacent two side walls 13 is spaced apart by 100em, and the bottom plate 12 and the side walls 13 define a plurality of channels. The workpiece 2 is a cover plate made of steel and having a thickness of 2 ft/m, and has a to-be-joined surface 21 to be engaged with the joint surface 11 of the cymbal micro-member 1. Therefore, when the workpiece 2 is joined to the side surface 13 of the micro-member i away from the joint surface 11 at the bottom plate 12, the bottom plate 12, the side walls 13, and the workpiece 2 can define a first-class track structure. 〜 壬 壬 壬 、 、 、 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 虽然 虽然The micro-member 1 and the workpiece 2 are made of steel metal, but not limited thereto. The micro-member 1 and the workpiece 2 can be made not only by metal of different materials, but also by It is made of other semiconductor materials such as Shi Xijing, and the material selection of the micro-member 1 and the workpiece 2 will be described later. However, it should be emphasized that, as shown in FIG. 2 and FIG. 3, a plurality of the above-mentioned micro-components 1 and workpieces are respectively formed by two pieces of 1249507 copper foils 6, 6' each having a size of 3 cm X 3 cm X 〇.25 cm. 2, so that it can be mass-produced, as for the number of the above-mentioned micro-components 1 and 2', depending on the size of each element, and the size of the material produced by the steels 6, 6, etc. It is decided that although the copper foils 6, 6' having an area of km X 3 cm are taken as an example, they are not limited thereto, and others are known as 22. Twisting X 26 cm, or even the above dimensions, can also be applied to the present invention. As shown in FIG. 4, the micro-component bonding method of the present invention comprises the following steps: Step 100, as shown in FIG. 1 to FIG. 3, the 10 bonding surface 11 of the micro-component 丄 and the to-be-joined surface 21 of the workpiece 2 are performed. Surface treatment. This step is for cleaning the joint surface U and the surface to be joined 21 to avoid contamination of the joint surface 11 or the joint surface 21 due to contamination; it is usually washed with water or (4) chemically dissolved. 4 in this example of 15 cases 'because of the New Type! And the cylinder member 2 is formed on the radiation I 6 and 6 made of copper, so the step is to first clean the joint surface and the to-be-joined surface 21 with a nitric acid solution having a concentration in the township to the countryside. The joint surface U and the to-be-joined surface 21 are then rinsed with fresh water, and finally the joint surface 11 and the (four) joint surface 21 are dried 'and immediately subjected to the next step. Step 102' is plated with a low-melting-point metal film 3 on the joint (4) of the micro-member 1 as shown in Fig. 1 and Fig. In this embodiment, the material of the low-point metal film 3 is a kick metal, and the low-spot metal forming film 3 is rapidly deposited by means of electric ore in the copper berth 6 (see FIG. 2). On the joint surface U of each of the micro-members 1. In the autumn, the low-melting point metal film 3 is used to splicing the micro-components! And the workpiece 2', the material of the low-melting-point metal film 3 is not limited to tin metal, and the 20 1249507 may be one of a tin-indium alloy, a tin-bismuth alloy, and a tin-copper alloy, and other solder materials containing tin metal. The thickness of the low-spot metal film 3 is also not limited to 7 Am. Since the side walls 13 are 1 〇〇 _ in the present embodiment, the low solubility is low. Point 5 The thickness of the metal film 3 is less than 1 (). The dance has a very good welding effect, that is, a good joint interface is achieved without destroying the microstructure, and the thickness is 5//m to 8/zm. good. In the present embodiment, although the low-spot metal film 3 is mined on the joint surface of the micro-component worker in the form of electric ore, it is not limited to this method, and other materials such as antimony ore are steamed. A method of depositing the low-melting-point metal film 3 on the joint surface 11 such as a mine is also suitable for use in the present invention. Therefore, as far as this step is concerned, as long as the material of the low (four) metal thin film 3 deposited thereon by electroplating, meaning, and hot plating can be used as the material for fabricating the micro-component 1 and the workpiece 2. . 15 Step 104, as shown in Fig. 6, the to-be-joined surface 21 of the workpiece 2 is placed against the low-melting-point metal film 3 which is bonded to the surface of the micro-member to be joined to the side of the micro-member. In this embodiment, the micro-component is heated by a heat press (see Fig. 7)! The workpiece 2 is heated while applying a force 2 〇 to bring the microstructure 1 and the workpiece 2 closer to each other, and the alignment manner is as shown in Figs. 7 and 8. Since the general hot press 5 has a hot platen 51' for carrying the article and a hot platen 52 opposite to the lower platen 51, the present invention is shown in conjunction with Figs. 2 and 3. In order to properly align the micro-member 1 and the sinuous workpiece 2, the placement mark 53, such as the "L"-shaped mark in the figure, is first marked on each of the lower heat-pressing plates 51. Then, the 5 10 15 20 1249507 = member Λ and the (4) 6, 6'# of the workpiece 2 are placed adjacent to each other. Retrieving - the magnet 54 is adjacent to the (4) 6, 6 which forms the microstructure, 1 and the workpiece 2, so that the magnet 54 attracts the copper:, and, and is aligned, in this embodiment, The magnet 54 is in the same shape as the respective ones. Finally, the magnet 54 is removed, and since the micro-members i and the steel bars 6 and 6 of the guard 2 are formed, only the thin side edges thereof abut against the magnet 54, so that the magnet 54 can be moved without moving Etc. (4) (a),

It況下’移除該磁鐵54,完成該微型構件!及該工件2之 精確對位。 步驟106,如圖9所示,加熱使該低熔點金屬薄膜3 呈熔融狀態,並施加—力量於該微型構件〗及該工件2 上,使該微型構件!之接合1]L與該工件2之待接合面 21相互靠近。在本步驟中是以熱壓機(見圖7)將該微型構 件1與該工件2加熱到16代至28〇t之溫度範圍内以進 行接合,而以加熱到18(rc至25〇艺之溫度範圍内為較佳; 並同時施加5至40 kg/cm2之力量使該微型構件j與該工 件2相互靠近。#加熱之範圍與施加力量之大小達到上述 狀態後,穩定地在5分鐘至6〇分鐘的時間内維持此一狀 態,使該低熔點金屬薄膜3之錫金屬材質擴散進入該微型 構件1及该工件2之銅金屬材質内,形成銅錫介金屬區域 4 ’完成該微型構件1與該工件2之接合作業。 由於本步驟是同時運用加熱與施力之方式使該低熔 點金屬薄膜3擴散進入該微型構件j與該工件2内,而質 變為熔點較高之介金屬材質,故就本步驟而言,只要能與 11 1249507 該低、熔點金屬薄膜3之材質於適當的溫度及壓力下形成介 金屬區域4之材料,均能作為製作該微型構件1及該工件 2之材料。 依上述步驟完成接合後,該微型構件1之接合面11 與該工件2接觸部分形成有介金屬區域4,因此使得接合 後之微型結構能在高於該低熔點金屬薄膜3之材質熔點之 裱境下工作;更由於擴散之效果,使得該微型構件χ與該 工件2間之接合強度能達到該介金屬材質所具有之強度。 以下則說明當該工件2為另一微米級之微型結構時, 應用本毛明進行接舍之方法。如圖W所示,本發明微型 構件接合方法之第二較佳實施例是用於接合兩分別具有 一接合面11、11,之微型構件Ji,,在本實施例中,各該 微型構件1、1,是一以銅為材質所製成之槽道結構,但並 不以此為限。各該微型構件b〗,具有一厚度為100#m底 板12、12’,以及複數由各該底板12、12,呈一角度延伸、 且高度為100//m之側壁13、13,,該接合面n、u,同樣 疋形成於該等側壁13、13,遠離各該底板12、12,之頂緣, 而各該等相鄰兩側壁13、13,間隔均為1〇〇//m,且與各該 底板12、12’配合能分別界定出複數槽道1〇、1〇,。當該等 微型構件1之接合面U與另一微型構件i,的接合面相 接〇時,便此疋義出一由複數槽道1〇、1〇,組成之流道姅 構。如圖11所示,本發明微型構件接合方法包含下列步驟γ 步驟200,對該等微型構件1、i,之個別接合面u、 11進行表面處理。首先是以一如硝酸溶液等之化學溶劑清 12 1249507 W等接合面n、n’’再以清水沖洗,最後使其乾燥並 立即進行下一步驟。 ▲步驟202,如圖12所示,錄設一低溶點金屬薄膜3於 乂等微型構件1之接合面11上。在本實施例中,該低溶點 金屬薄膜3是以電鍵之方式沉積厚度以m之錫銦合金於 該等接合面U上而形成的,但並非以此材質亦非以此加工 方式為限。 步驟204’如圖13所示,將另一微型構件i,的接合面 11’貼靠於該低熔點金屬薄膜3上;其對位方法與上述㈣ φ ίο 1〇4大致相同,惟因另一微型構件i,亦形成有結構,因此 對位時應注意其方向。 步驟206,如圖14所示,加熱使該低炼點金屬薄膜3 呈熔融狀態,同時施加一力量於該等微型構件i上,使該 等微型構件1、1,個別之接合面1]L、1]L,相互靠近。在本實 15 施例中是以熱壓機5(見圖7)將該等微型構件卜:,加熱到 180C至250 C之溫度範圍内,同時施加1〇kg/cm2之力量 使該等微型構件1、1,相互靠近;並在此一狀態下維持1〇 _ 分鐘,使該低熔點金屬薄膜3擴散進入該等微型構件1與 1之侧壁13、13’内,藉由溫度與壓力使不同材質之分子互 20 相結合,形成介金屬區域4,完成該等微型構件ii,之接 合作業。 綜上所述,本發明微型構件接合方法以電鍍之方式將 該低溶點金屬薄膜3鍍設於該微型構件i之接合面^工上 因此能以較簡單且成本較低之方式在短時間之内將該低 13 1249507 熔點金屬薄膜3以微米層級之厚度大面積且均勻地分佈於 該接合面11上,完全克服過往以高分子黏膠接合所面臨塗 佈不均之困境,與擴散軟焊因焊材鍍設成本與沉積厚度所 造成生產成本過高,以及接合面平坦度、焊材、焊材鍍設 5 厚度和製程之環境控制等技術困難度較高等之問題。 此外,更由於本發明微型構件接合方法是以熱壓方式 施加5 kg/cm2至40kg/cm2之力量使該微型構件1與該工件 2或另一微型構件Γ緊迫貼合,因此不僅能加速縮短該微 型構件1與該工件2或另一微型構件Γ接合所需時間外, 10 更不會破壞該微型構件1 (與另一微型構件Γ)之初始結 構,且能以較低之技術困難度與製作成本廣泛地運用於微 型構件之接合,使其達到大量且低成本之製造優勢,充分 符合本發明之目的。 惟以上所述者,僅為本發明之二較佳實施例而已,當 15 不能以此限定本發明實施之範圍,即大凡依本發明申請專 利範圍及發明說明書内容所作的等效變化與修飾,皆應仍 屬本發明專利涵蓋之範圍内。 【囷式簡單說明】 圖1是本發明微型構件接合方法之第一較佳實施例的 20 一平面示意圖,說明一微型構件及一工件之構造; 圖2是該第一較佳實施例之一平面圖,說明一銅箔形 成有複數個微型構件; 圖3是該第一較佳實施例之一平面圖,說明另一銅箔 形成有複數個工件; 14 1249507 圖4是該第一較佳實施例之一流程圖; 圖5是該第一較佳實施例之一平面示意圖,說明於該 微型構件上鍍設一低熔點金屬薄膜; 圖6是該第一較佳實施例之一平面示意圖,說明將該 5 工件貼合於該低熔點金屬薄膜上; 圖7是該第一較佳實施例之一平面示意圖,說明該等 銅箔於一熱壓機上對位之方式; 圖8是該熱壓機之下熱壓板的俯視圖(圖7中沿線 VIII-VIII之剖面示意圖); 10 圖9是該第一較佳實施例之一平面示意圖,說明該微 型構件及該工件彼此接合並形成介金屬區域; 圖10是本發明微型構件接合方法之第二較佳實施例 的一平面示意圖,說明兩微型構件之構造; 圖11是該第二較佳實施例之一流程圖; 15 圖12是該第二較佳實施例之一平面示意圖,說明於 該等微型構件其中之一上鍍設一低熔點金屬薄膜; 圖13是該第二較佳實施例之一平面示意圖,說明將 該等微型構件其中另一貼合於該低熔點金屬薄膜上;及 圖14是該第二較佳實施例之一平面示意圖,說明該 20 等微型構件彼此接合並形成介金屬區域。 15 1249507 【圖式之主要元件代表符號說明】 1 、Γ微型構件 4 介金屬區域該 10 、10’槽道 5 熱壓機 11 、11’接合面 51 下熱壓板 12 、:12’底板 52 上熱壓板 13 、13’側壁 53 呑己號 2 工件 54 磁鐵 21 待接合面 6 、6’銅络 3 低熔點金屬薄膜 100.102.104.106.步驟 200.202.204.206.步驟 16Under the condition of 'removing the magnet 54, complete the micro-component! And the exact alignment of the workpiece 2. Step 106, as shown in FIG. 9, heating causes the low-melting-point metal film 3 to be in a molten state, and applies force to the micro-member and the workpiece 2 to make the micro-member! The joint 1] L is close to the joint surface 21 of the workpiece 2 to be joined. In this step, the micro-member 1 and the workpiece 2 are heated to a temperature range of 16 to 28 〇t by a hot press (see FIG. 7) to be joined, and heated to 18 (rc to 25 〇 art). It is preferable in the temperature range; and the force of 5 to 40 kg/cm2 is simultaneously applied to bring the micro-member j and the workpiece 2 close to each other. #The range of heating and the magnitude of the applied force reach the above state, and stably for 5 minutes. Maintaining this state for a period of 6 minutes, the tin metal material of the low melting point metal film 3 is diffused into the copper metal material of the micro component 1 and the workpiece 2 to form a copper tin metal intermetallic region 4' to complete the micro The joining operation of the member 1 and the workpiece 2. Since this step is to simultaneously diffuse the low-melting-point metal film 3 into the workpiece j and the workpiece 2 by heating and applying force, the mass becomes a medium having a higher melting point. Material, so as far as this step is concerned, as long as the material of the metal material region 4 can be formed under the appropriate temperature and pressure with the material of the low melting point metal film 3 of 11 1249507, the micro component 1 and the workpiece 2 can be fabricated. Material. After the above steps are completed, the joint surface 11 of the micro-member 1 and the workpiece 2 are in contact with the workpiece 2 to form the intermetallic region 4, so that the microstructure after bonding can be higher than the melting point of the material of the low-melting metal film 3. Working underneath; further, due to the effect of diffusion, the bonding strength between the microstructure member and the workpiece 2 can reach the strength of the metal material. Hereinafter, when the workpiece 2 is a micron structure of another micron order, The method of applying the present invention is as shown in Fig. W. The second preferred embodiment of the method for joining the micro-members of the present invention is for joining two micro-members Ji having a joint surface 11, 11 respectively. In this embodiment, each of the micro-members 1 and 1 is a channel structure made of copper, but is not limited thereto. Each of the micro-members b has a thickness of 100#m. 12, 12', and a plurality of side walls 13, 13 extending from the bottom plates 12, 12 at an angle of 100/m, and the joint faces n, u are also formed on the side walls 13, 13, away from each of the bottom plates 12, 12, the top edge, And each of the adjacent two side walls 13 and 13 has an interval of 1 〇〇//m, and cooperate with each of the bottom plates 12, 12' to define a plurality of channels 1 〇, 1 〇, respectively. When the joint surface U of the member 1 is in contact with the joint surface of the other micro-member i, a flow passage structure composed of a plurality of grooves 1 〇, 1 〇 is formed, as shown in FIG. The method of joining the micro-components of the present invention comprises the following step γ, step 200, performing surface treatment on the individual bonding surfaces u, 11 of the micro-components 1, i. First, bonding is carried out by using a chemical solvent such as a nitric acid solution, 12 1249507 W or the like. The faces n, n'' are then rinsed with water and finally allowed to dry and immediately proceed to the next step. ▲Step 202, as shown in Fig. 12, a low-melting-point metal film 3 is placed on the joint surface 11 of the micro-member 1 such as ruthenium. In the present embodiment, the low-melting-point metal film 3 is formed by depositing a tin-indium alloy having a thickness of m on the bonding surfaces U by means of a bond, but this material is not limited to this processing method. . Step 204', as shown in FIG. 13, the bonding surface 11' of the other micro-component i is placed on the low-melting-point metal film 3; the alignment method is substantially the same as the above (4) φ ίο 1〇4, but A micro-member i is also formed with a structure, so the direction should be noted when aligning. Step 206, as shown in FIG. 14, heating causes the low-point metal film 3 to be in a molten state while applying a force to the micro-members i, so that the micro-members 1, 1 and the individual joint faces 1] L , 1] L, close to each other. In the embodiment of the present invention, the micro-components are heated by a hot press 5 (see Fig. 7) to a temperature range of 180 C to 250 C while applying a force of 1 〇 kg/cm 2 to make the micro-caps The members 1, 1 are close to each other; and maintained in this state for 1 〇 minute, the low-melting-point metal film 3 is diffused into the side walls 13, 13' of the micro-components 1 and 1, by temperature and pressure The molecules of different materials are combined with each other to form a metal intermetallic region 4, and the bonding work of the micro-components ii is completed. In summary, the micro-component bonding method of the present invention plated the low-melting-point metal film 3 on the bonding surface of the micro-component i by electroplating, thereby enabling the short-time in a relatively simple and low-cost manner. The low-level 13 1249507 melting point metal film 3 is widely distributed on the bonding surface 11 in a micron-thickness thickness, completely overcoming the predicament of coating unevenness caused by polymer bonding in the past, and softening with diffusion. The welding cost due to the cost of plating and the thickness of the deposited material is too high, and the technical difficulty such as the flatness of the joint surface, the thickness of the welding material, the thickness of the welding material, and the environmental control of the process are high. In addition, since the micro-component joining method of the present invention applies a force of 5 kg/cm 2 to 40 kg/cm 2 by hot pressing to make the micro-component 1 closely adhere to the workpiece 2 or another micro-member ,, not only can the acceleration be shortened. The time required for the micro-member 1 to engage the workpiece 2 or another micro-member , 10 does not destroy the initial structure of the micro-component 1 (and another micro-component Γ), and can be less technically difficult. It is well suited to the purpose of the present invention to achieve a large and low cost manufacturing advantage in conjunction with manufacturing costs that are widely used in the joining of micro-components. However, the above is only the preferred embodiment of the present invention, and 15 is not intended to limit the scope of the present invention, that is, equivalent changes and modifications made by the scope of the present invention and the contents of the description of the invention, All should remain within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a plan view showing a first embodiment of a micro-component joining method of the present invention, showing a configuration of a micro-member and a workpiece; FIG. 2 is a view of the first preferred embodiment. Figure 2 is a plan view showing a copper foil having a plurality of micro-members; Figure 3 is a plan view of the first preferred embodiment showing another copper foil formed with a plurality of workpieces; 14 1249507 Figure 4 is a first preferred embodiment FIG. 5 is a plan view schematically showing a first low-melting metal film on the micro-member; FIG. 6 is a plan view showing the first preferred embodiment; The 5 workpieces are attached to the low melting point metal film; FIG. 7 is a plan view of the first preferred embodiment illustrating the manner in which the copper foils are aligned on a hot press; FIG. 8 is the heat. A top view of the hot platen under the press (a schematic cross-sectional view taken along line VIII-VIII in Fig. 7); Fig. 9 is a plan view schematically showing the first preferred embodiment, illustrating that the micro-member and the workpiece are joined to each other and form a mediator. Metal area; Figure 10 is BRIEF DESCRIPTION OF THE DRAWINGS FIG. 11 is a flow chart showing a second preferred embodiment of the second preferred embodiment of the present invention; FIG. 11 is a second preferred embodiment of the second preferred embodiment; FIG. A schematic plan view showing a low-melting-point metal film on one of the micro-components; FIG. 13 is a plan view of the second preferred embodiment, illustrating another of the micro-components On the low melting point metal film; and FIG. 14 is a plan view of the second preferred embodiment, illustrating that the 20 and other micro members are joined to each other and form a metal intermetallic region. 15 1249507 [Description of main components of the drawings] 1. ΓMicro-component 4 Intermetallic region 10, 10' channel 5 Hot press 11, 11' joint surface 51 Lower hot plate 12, 12' bottom plate 52 Upper hot plate 13 , 13 ' side wall 53 呑 号 2 workpiece 54 magnet 21 to be joined surface 6 , 6 ' copper 3 low melting point metal film 100.102.104.106. Step 200.202.204.206. Step 16

Claims (1)

1249507 拾、申請專利範圍: 1· 一種微型構件接合方法,用以將一具有一接合面之微型構 件與工件接合,該微型構件接合方法包含下列步驟·· a) 鑛設一低熔點金屬薄膜於該接合面上; b) 將該工件貼靠於該低熔點金屬薄膜上,·及 Ο加熱使該低熔點金屬薄膜呈熔融狀態,並施加 -使該接合面與該工件相1靠近之力量於該微型構件 σ 及該工件上。 2·依據申請專利範圍第1項所述的微型構件接合方法,其 中,該步驟c)是加熱到16〇t^ 28(rc之溫度範圍内以進 行接合。 3. 依據申請專利範圍帛2項所述的微型構件接合方法,其 中’該步驟C)是加熱到⑽。25Gt之溫度範圍内以進 行接合。 4. 依據中請專利範圍第2項所述的微型構件接合方法,其 中’該步驟c)是施加5kg/cm2至4〇kg/cm2之力料 $型構件與該工件相互靠近以進行接合。 ^ 其 5. 依據中請專利範圍第2項所述的微型構件接合方法 中,該步驟c)之狀態維持5分鐘至60分鐘。 其 6·依據申請專利範圍第1項所述的微型構件接合方法 中’該微型構件之材質為金屬及半導體其中之一。 7.依據巾請專利範圍第6項所述的微型構件接合方法,』 中,該微型構件之材質為銅,而該低溶點金屬薄膜之材: 為錫金屬 '錫纽合金' 錫銦合金及錫銅合金其中之—。』 17 1249507 8.依據專利範圍第i項所述的微型構件接合 中’該低炼點金屬薄膜之厚度為’其 9·依據中請專利範圍第}項所述的微型構件接合 中,該步驟a)是以電鑛之方式將該低溶點金 冗= 該接合面上。 騰心積於 1〇.依據申請專利範圍第!項所述的微型構件接合 含於步驟a)之前的下列步驟: 、’更包 句對該接合面進行表面處理。 11·依據t請專㈣㈣1〇項所述的微型構件接合方 中,該步驟d)包含下列步驟·· 凌’其 d-Ι)以一化學溶劑清洗該接合面; d-2)以清水沖洗該接合面;及 心3)使該接合面乾燥。 12.依據中請㈣範圍第μ所述的微型構件接合 中,該步驟b)包含下列步驟: 、’其 b -1)將違工件貼靠於該微型構件上; 工件以使 b-2)以一磁鐵同時貼靠該微型構件與該 其等相互對齊;及 b-3)移除該磁鐵。’ 13· —種微型構件接合方法,用以使兩分別具有一接合 灿 型構件相接合,該微型構件接合方法包含下列步辣面之微 a)鐘設一低熔點金屬薄膜於該等接合面其 甲之一 金屬薄 b)將該等接合面其中另一貼靠於該低熔點 18 1249507 膜上;及 其 進 C)加熱使該低㈣金屬薄膜呈熔融狀態,並施加 -使該等接合面相互靠近之力量於該等微型構件上。 14.依據申請專利範圍第13項所述的微型構件接合方法, 中’該步驟c)是加熱到贿至辑之溫度範圍内以 行接合。 法,其 内以進 15.依據申研專利範圍第14項所述的微型構件接合方 中’該步驟c)是加熱到贿至25〇。。之溫度範圍 行接合。 16.依據中請㈣範圍第14項所述的微型構件接合方法,其 中,該步驟c)是施加5 kg/cm2至撕細2之力量使該箸 微型構件相互靠近以進行接合。 乂 17·依據中4專利範圍第14項所述的微型構件接合方法,复 中,該步驟c)之狀態維持5分鐘至6〇分鐘。 、 18·依據中請專利範圍第13項所述的微型構件接合方法 中’该等微型構件之材質為金屬及半導體其中之一。 19·依據中請專利範圍第18項所述的微型構件接合方法,复 中。亥等微型構件之材質為銅,而該低溶點金屬薄膜 貝為錫金屬、錫鉍合金、錫銦合金及錫銅合金其中之一。 20·依據中μ專利範圍第13項所述的微型構件接合方法,复 中,該低㈣金屬薄膜之厚度為5/^至IG/zni。 ’、 21·依射請專利範圍第13項所述的微型構件接合方法,其 中,吞玄步驟a)是以電錄之方式將該低炼點金屬薄膜 該等接合面其中之一上。 積方; 19 Ϊ249507 據申凊專利範圍第13項所述的微型構件接合方法 匕含於步驟a)之前的下列步驟: d)對該等接合面其中之一進行表面處理。 23·依據中請專㈣圍第22項所述的微型構件接合方法 中,該步驟d)包含下列步驟·· / ,^、 L1)以一化學溶劑清洗該等接合面其中之 心2)以清水沖洗該接合面,·及 d_3)使該接合面乾燥。 24.:==:;r_構件接合-其 1)曼合该等微型構件; 對齊;及 b-2)以一磁鐵同瞎 _貼靠该專微型構件使其等相 互 b-3)移除該磁鐵。 201249507 Pick-up, patent application scope: 1. A micro-component joining method for joining a micro-member having a joint surface to a workpiece, the micro-component joining method comprising the following steps: a) depositing a low melting point metal film b) the workpiece is placed on the low-melting-point metal film, and the crucible is heated to melt the low-melting-point metal film, and the force is applied to bring the bonding surface closer to the workpiece The microstructure σ and the workpiece. 2. The method of joining a micro-component according to claim 1, wherein the step c) is heated to a temperature range of 16 〇t^28 (rc) for bonding. 3. According to the scope of the patent application 2 The micro-component joining method, wherein 'this step C' is heating to (10). Engage in a temperature range of 25 Gt. 4. The method of joining a micro-component according to the second aspect of the invention, wherein the step c) is to apply a force of 5 kg/cm 2 to 4 〇 kg/cm 2 to the workpiece to be joined to each other for joining. ^ 5. The state of the step c) is maintained for 5 minutes to 60 minutes in the method of joining the micro-components according to the second aspect of the patent application. 6. The method of joining a micro-component according to claim 1, wherein the material of the micro-component is one of a metal and a semiconductor. 7. According to the method of joining a micro-component according to item 6 of the patent application, the material of the micro-component is copper, and the material of the low-melting-point metal film is: tin metal 'tin alloy' tin-indium alloy And tin-copper alloy among them -. 』 17 1249507 8. In the micro-component joining described in the item i of the patent range, the thickness of the low-thickness metal film is 'the assembly of the micro-components according to the scope of the patent scope s. a) The low-melting point is redundant in the form of electric ore = the joint surface. Tengxin accumulated in 1〇. According to the scope of patent application! The micro-component joint described in the item is subjected to the following steps prior to step a): ' More inclusively, the joint surface is surface treated. 11. According to t, please refer to the micro-component joints described in (4) (4) (1), the step d) includes the following steps: · ''d'') wash the joint surface with a chemical solvent; d-2) rinse with water The joint surface; and the core 3) dry the joint surface. 12. In the joining of the micro-components according to the range (μ) of the middle (4), the step b) comprises the following steps: ', its b-1', the workpiece is placed against the micro-component; the workpiece is such that b-2) A magnet is simultaneously placed against the micro-member and aligned with the other; and b-3) the magnet is removed. A semiconductor member joining method for joining two joined members, the method comprising the following steps: a) a low melting point metal film on the joint surface One of the metal sheets is b) the other of the bonding surfaces is placed against the low melting point 18 1249507 film; and C) is heated to cause the low (tetra) metal film to be in a molten state, and to apply - to bond The forces that face each other are on the micro-components. 14. The method of joining a micro-component according to claim 13 of the patent application, wherein the step c) is heated to a temperature range of the bribe to join. The law, which is based on the inside of the micro-component joints described in the 14th section of the patent application scope, is to be heated to a bribe to 25 〇. . The temperature range is lined. 16. The method of joining a micro-component according to the item (4), wherein the step c) is to apply a force of 5 kg/cm 2 to the tear 2 to bring the crucible members closer to each other for joining. According to the micro-component joining method of the fourth aspect of the invention, the state of the step c) is maintained for 5 minutes to 6 minutes. 18. The method of joining the micro-components according to the thirteenth aspect of the patent application, wherein the material of the micro-components is one of a metal and a semiconductor. 19. The method of joining the micro-components according to item 18 of the patent scope of the patent application is repeated. The material of the micro-components such as Hai is copper, and the low-melting-point metal film is one of tin metal, tin-bismuth alloy, tin-indium alloy and tin-copper alloy. 20. The micro-component bonding method according to Item 13, wherein the thickness of the low (tetra) metal film is from 5/^ to IG/zni. The method of joining the micro-components according to claim 13, wherein the step a) is performed by one of the joining surfaces of the low-point metal film by electro-recording. 19 Ϊ 249507 The method of joining the micro-components according to claim 13 of the scope of the patent application is the following steps before the step a): d) Surface treatment of one of the joint faces. 23. According to the method of joining the micro-components according to Item 22 of the fourth (4), the step d) comprises the following steps: /, ^, L1) cleaning the cores of the joint surfaces with a chemical solvent 2) The joint surface is rinsed with clean water, and d_3) to dry the joint surface. 24.:==:;r_member joint--1) Mann-like micro-components; alignment; and b-2) with a magnet 瞎 _ affixing the special micro-member to make it b-3) In addition to the magnet. 20
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8067769B2 (en) 2005-11-25 2011-11-29 Panasonic Electric Works Co., Ltd. Wafer level package structure, and sensor device obtained from the same package structure
US8080869B2 (en) 2005-11-25 2011-12-20 Panasonic Electric Works Co., Ltd. Wafer level package structure and production method therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8067769B2 (en) 2005-11-25 2011-11-29 Panasonic Electric Works Co., Ltd. Wafer level package structure, and sensor device obtained from the same package structure
US8080869B2 (en) 2005-11-25 2011-12-20 Panasonic Electric Works Co., Ltd. Wafer level package structure and production method therefor

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