CN107352504A - A kind of micro-fluidic MEMS chip method for packing - Google Patents
A kind of micro-fluidic MEMS chip method for packing Download PDFInfo
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- CN107352504A CN107352504A CN201710422446.7A CN201710422446A CN107352504A CN 107352504 A CN107352504 A CN 107352504A CN 201710422446 A CN201710422446 A CN 201710422446A CN 107352504 A CN107352504 A CN 107352504A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0172—Seals
- B81C2203/019—Seals characterised by the material or arrangement of seals between parts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/033—Thermal bonding
- B81C2203/036—Fusion bonding
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The present invention relates to a kind of micro-fluidic MEMS chip method for packing, for being laminated to the top substrate layer with micro-channel structure and mutually the underlying substrate being connected with top substrate layer and being packaged to obtain micro-fluidic MEMS chip, this method comprises the following steps：The first step, prepare underlying substrate；Second step, prepare top substrate layer；3rd step, prepare chip semi-finished product；4th step, chip semi-finished product preheating；5th step, radio-frequency power supply bombardment chip semi-finished product.It is an advantage of the invention that the metal film of upper and lower laminar substrate is acted on using radio-frequency technique, metallic film surface is set to form localized hyperthermia, cause substrate surface melt after with metal film welding, and then upper and lower laminar substrate is set preferably to be closely linked, the bonding precision of product is substantially increased, encapsulation process is avoided and hinders micro-channel structure, and then improve the yield rate of chip package, the production cycle is shortened, reduces production cost.
Description
Technical field
The present invention relates to a kind of MEMS chip radio frequency package method, especially a kind of micro-fluidic MEMS chip method for packing,
Belong to chip encapsulation technology field.
Background technology
Microflow control technique is one of new and high technology and multi-crossed disciplines Environment Science field developed rapidly at present, is biochemical
Detection, chemical science and the important technological platform of information science signal detection and Study on processing method.Micro-fluidic chip is to be based on
MEMS（Micro Electro Mechanical Systems, microelectromechanical systems）Process technology, study microfluidic channel
Driving and control law in surface property, microfluidic system, establish the work(such as sample pretreatment, mixing, reaction, separation, detection
The micro-fluidic chip integrated technology that energy unit is integrated.
Micro-fluidic chip is one of Primary Component in biologic medical, fine chemistry industry, field of fast detection.In general, it is micro-
Fluidic chip is mainly made up of upper and lower substrate, and upper and lower substrate can produce closed fluid channel, liquid storage tank or reaction tank after combining,
Micro-fluidic chip is caused to usually contain multiple fluid channels of different shapes, this can both use Micropump to make liquid to be detected in difference
Runner in from different reagent carry out complicated biochemical reaction, can also be counted or directly observe result.Further, since
Micro-fluidic chip uses more advanced micro-processing technology, original detecting instrument is more minimized, is integrated, while significantly
The biochemistry detection time is reduced, makes biochemistry detection more simple, quick, comprehensive.
During facture of microchip, chip package is an important step.Existing chip encapsulation technology is main
There are low-temperature bonding and high temperature fused two kinds.After low-temperature bonding refers to two superimposed substrates together, its surface is under cryogenic
The technology for being attracted each other and being bonded together by van der Waals interaction, low-temperature bonding prebasal plate are both needed to by surface activation process,
And the fused required temperature of high temperature is general higher, and mode of heating is overall heating, heating process SMIS flake products and fluid channel knot
Structure not only has very big deformation, can also produce Newton's ring.In addition, both approaches have production cycle length, cost is high, product
The shortcomings of matter can not ensure.
The content of the invention
It is an object of the invention to：The defects of existing for prior art, propose a kind of using the micro- of new bonding techniques
Stream control MEMS chip method for packing, this method are solved existing for temperature bonding in the prior art using radio frequency local heating technology
Many uncontrollable factors, realize the reliable and stable encapsulation of upper and lower laminar substrate.
In order to reach object above, the invention provides a kind of micro-fluidic MEMS chip method for packing, for micro-
The top substrate layer of flow passage structure and the underlying substrate being connected mutually is laminated with top substrate layer it is packaged to obtain micro-fluidic MEMS chip,
This method comprises the following steps：
The first step, prepare underlying substrate ---, the thick metals of one layer of 200 ± 50nm are plated in the underlying substrate upper surface of glass material
Film, using MEMS technology, fluid channel is made on the metal film of underlying substrate；
Second step, prepare top substrate layer --- the thick metals of one layer of 200 ± 50nm are plated in the top substrate layer lower surface of glass material
Film, after smoothening photoresist on the metal film of top substrate layer, photolithographic exposure, development are carried out, etching forms micro- with underlying substrate
Runner identical pattern；
3rd step, prepare chip semi-finished product --- after top substrate layer is aligned with underlying substrate, compress to form chip by mechanical force
Semi-finished product；
4th step, chip semi-finished product preheating --- chip semi-finished product are placed in vacuum chamber of the vacuum less than 0.0001Pa,
Irradiation far infrared is preheated to 350 ± 50 DEG C and is incubated 2 ± 1 minutes；
5th step, radio-frequency power supply bombardment chip semi-finished product --- radio-frequency power supply produces 13.56 ± 5MHZ electromagnetic wave, and in electromagnetism
200 ± 50W energy is modulated on ripple, electromagnetic wave is gathered in metal film, metal film electromagnetic wave absorption energy through upper and lower laminar substrate
After heat up, melt the surface of upper and lower laminar substrate at the temperature higher than glass softening point, top substrate layer and underlying substrate welding
Form micro-fluidic MEMS chip.
The present invention is bombarded chip in ultra-high vacuum environment using radio-frequency power supply, according to physics principle radio frequency electrical
Electromagnetic wave caused by source can penetrate glass substrate without being had an impact to glass substrate, and electromagnetic wave is gathered in glass substrate attachment
Metal film on, electromagnetic wave can accelerate the atomic motion speed of metal surface so that metal surface temperature rise, in addition by
It is in linear after photoetching treatment in metal film, metal film can raise the local temperature of chip after absorbing energy（Metal film covers
The portion temperature of lid can raise）, because the fusing point of metal film is higher than glass softening point, when local temperature is increased to glass softening point
During the above, the glass baseplate surface of chip semi-finished product melts, and makes high-temperature metal film and the mutual welding of glass, is finally reached levels
The purpose of the metallic film melts welding of substrate.
Further, in first, second step, gold is carried out to upper and lower laminar substrate using magnetron sputtering, evaporation or electro-plating method
Belong to coating film treatment, metal film is formed on upper and lower laminar substrate surface.Metal film uses chromium or aluminium, the thickness and homogeneity of metal film
Programming rate and part temperature difference when can be to follow-up radio-frequency welding have an impact, and metal film is too thick to cause upper and lower laminar substrate to paste
Close bad, and then cause chip bonding not firm, metal film is too thin, and that radiofrequency signal can be caused to absorb is incomplete.Metal film can be right
Microwave energy caused by radio frequency is shielded and absorbed, so that the local temperature rise of chip.
Further, the specific method that fluid channel is made in the first step is as follows：One layer is plated on the metal film of underlying substrate
After the thick metal shadowing material of 2000 Ethylmercurichlorendimides, one layer of photoresist of spin coating on metal shadowing layer, and by photolithographic exposure, be developed in
Fluid channel pattern needed for being formed on photoresist, then forms fluid channel using dry or wet etch technology on underlying substrate.
Further, the metal shadowing material is gold or chromium.
Further, in the 5th step, when radio-frequency power supply is bombarded chip structure, detected in real time using infrared radiation thermometer
The temperature on the upper and lower laminar substrate surface of glass material, and the temperature signal that infrared radiation thermometer is gathered is delivered to radio-frequency power supply control
Device processed, radio-frequency power supply controller are controlled by finely tuning the power output of radio-frequency power supply to upper and lower laminar substrate surface temperature.This
Sample, the power by adjusting radio-frequency power supply are capable of the local temperature of quickly and accurately control chip.
Further, the material of the upper and lower laminar substrate is high boron glass, Pyrex or quartz glass.
Further, when the material of upper and lower laminar substrate is high boron glass, its softening point is 580 DEG C；When upper and lower layer base
When the material of plate is Pyrex, its softening point is 660 DEG C；When the material of upper and lower laminar substrate is quartz glass, its softening point
For 1200 DEG C.
Further, when the material of upper and lower laminar substrate is high boron glass, the bombardment time of radio-frequency power supply is 30 seconds, is penetrated
Frequency power is 200W；When the material of upper and lower laminar substrate is Pyrex, the bombardment time of radio-frequency power supply is 50 seconds, radio frequency work(
Rate is 185W；When the material of upper and lower laminar substrate is quartz glass, the bombardment time of radio-frequency power supply is 66 seconds, and radio-frequency power is
300W。
In summary, according to the difference of glass material, the power output of radio-frequency power supply is different, and temperature is also different.
Further, in second step, the joint connecting hole in two impenetrating thickness directions is also formed with the top substrate layer,
Two joint connecting holes are corresponding with the both ends of fluid channel respectively, and pluggable jointing in the joint connecting hole, the joint
It is connected by circuit with MEMS.
Further, there is 1.2MPa/cm between upper and lower laminar substrate in the 3rd step2Pressure.
It is an advantage of the invention that acting on the metal film of upper and lower laminar substrate using radio-frequency technique, make metallic film surface formation office
Portion's high temperature, cause substrate surface melt after with metal film welding, and then upper and lower laminar substrate is preferably closely linked,
Substantially increase the bonding precision of product, avoid encapsulation process hinder micro-channel structure, and then improve chip package into
Product rate, shortens the production cycle, reduces production cost.
Brief description of the drawings
The present invention is further illustrated below in conjunction with the accompanying drawings.
Fig. 1 is the structural representation of one embodiment of the invention.
Fig. 2 is the structural representation of underlying substrate in the present invention.
Fig. 3 is the structural representation of substrate at the middle and upper levels of the invention.
Embodiment
Embodiment one
The micro-fluidic MEMS chip method for packing of the present embodiment, for the top substrate layer 2 with micro-channel structure and and upper strata
The underlying substrate 1 of the phase of substrate 2 stacking connection is packaged to obtain micro-fluidic MEMS chip（See Fig. 1）.This method includes following step
Suddenly：
The first step, prepare underlying substrate 1（Underlying substrate is as shown in Figure 2）--- using coating method（Magnetron sputtering, evaporation or plating
Method）It is thick that one layer of 200 ± 50nm is plated in the upper surface of underlying substrate 1 of glass material（It is preferred that 200nm）Metal film, utilize MEMS
Technique makes fluid channel 3 on the metal film of underlying substrate 1, and the pattern of fluid channel 3 designs according to customer requirement.Make fluid channel 3
Method it is specific as follows：After one layer of 2000 thick metal shadowing material of Ethylmercurichlorendimide is plated on the metal film of underlying substrate 1, covered in metal
One layer of photoresist of spin coating on layer is covered, and required fluid channel glued membrane pattern is formed by photolithographic exposure, development on a photoresist, so
Fluid channel 3 is formed on underlying substrate 1 using dry or wet etch technology afterwards, i.e., first using metal etch agent in metal shadowing
The metallic pattern consistent with fluid channel glued membrane pattern is etched on material, then is etched using glass etching agent on underlying substrate 1
Go out the fluid channel 3 consistent with metallic pattern, wherein metal etch agent is to be lost purchased from the gold of Tianjin Chuan Si chemical products Co., Ltd
Carve agent（Model TFA）, glass etching agent is the ammonium fluoride etchant purchased from Jiangyin chemical reagent Co., Ltd., Factory（Model
BOE7：III grade of 1CMOS-）.Metal shadowing material is the metals such as the gold of resistance to glass etching agent corrosion, chromium.
Second step, prepare top substrate layer 2（Top substrate layer structure is as shown in Figure 3）--- using coating method（Magnetron sputtering, steaming
Hair or electro-plating method）It is thick that one layer of 200 ± 50nm is plated in the lower surface of top substrate layer 2 of glass material（It is preferred that 200nm）Metal film,
Photoresist is smoothened on the metal film of top substrate layer 2, carries out photolithographic exposure, development, etching forms the fluid channel with underlying substrate 1
3 identical patterns.
3rd step, prepare chip semi-finished product --- after top substrate layer 2 is aligned with underlying substrate 1, shape is compressed by mechanical force
Into the chip semi-finished product of face face attaching type.It is to use the upper and lower laminar substrate 1 of clamp that mechanical force, which compresses, makes top substrate layer, lower floor
There is 1.2MPa/cm between substrate 12Pressure.When upper and lower substrate compression is to ensure hot melt bonding below between two-layer substrate
There is no space, improve bonding quality.
4th step, chip semi-finished product preheating --- it is true less than 0.0001Pa superelevation that chip semi-finished product are placed in vacuum
In cavity, irradiation far infrared is preheated to 350 ± 50 DEG C（It is preferred that 350 DEG C）Insulation 2 ± 1 minutes（It is preferred that 2 minutes）, to improve glass
The adhesion of glass substrate.Far infrared is provided by power for 500W hot plate.The vacuum of ultra-high vacuum environment is in 0.0001Pa
Hereinafter, the manufacture method of ultra-high vacuum environment is as follows：Stainless steel cavity is vacuumized as fore pump first by lobe pump, then
Below 0.0001Pa is evacuated to using molecular pump or cold pump.
5th step, radio-frequency power supply（Model RFPP/10S）Bombard chip semi-finished product --- radio-frequency power supply bombardment chip half into
Product --- radio-frequency power supply produces 13.56 ± 5MHZ（It is preferred that 13.56MHZ）Electromagnetic wave, and on electromagnetic wave modulate 200 ± 50W
（It is preferred that 200W）Energy, electromagnetic wave is gathered in metal film, metal film electromagnetic wave absorption energy through top substrate layer, underlying substrate 1
Cause chip local temperature to raise after amount, on metal film, top substrate layer 2, lower floor are made at the temperature higher than glass softening point
The surface of substrate 1 is melted, and top substrate layer 2 forms micro-fluidic MEMS chip with the welding of underlying substrate 1.Because the fusing point of metal film is high
In glass softening point, after temperature reaches glass softening point, top substrate layer 2, the glass surface of underlying substrate 1 start to melt, and
It is adhered to metal film and causes top substrate layer 2 and 1 mutual welding of underlying substrate, obtains micro-fluidic MEMS chip.
When radio-frequency power supply is bombarded chip semi-finished product, the upper strata base of glass material is detected in real time using infrared radiation thermometer
Plate 2, the temperature on the surface of underlying substrate 1, and the temperature signal that infrared radiation thermometer is gathered is delivered to radio-frequency power supply controller, radio frequency
Power-supply controller of electric is connected with infrared radiation thermometer closed loop, and radio-frequency power supply controller is by finely tuning the power output of radio-frequency power supply to upper strata
Substrate 2, the surface temperature of underlying substrate 1 are controlled.Radio-frequency power supply controller sets glass softening point, and infrared radiation thermometer is adopted
The temperature of collection is compared with glass softening point, when the temperature is less than glass softening point, radio-frequency power supply controller control radio frequency
The power output increase of power supply, when the temperature reaches softening point, radio-frequency power supply controller controls the power output of radio-frequency power supply
Reduce, when the temperature exceedes 20 DEG C of softening point, radio-frequency power supply is closed in control, so as to realize chip local temperature control.Wherein, upper strata
Substrate 2, the material of underlying substrate 1 are high boron glass, Pyrex（Xiao Te BF33）Or quartz glass.When top substrate layer 2, lower floor
When the material of substrate 1 is high boron glass, its softening point is 580 DEG C, and the power output of radio-frequency power supply is 200W, bombardment time 30
Second；When the material of top substrate layer 2, underlying substrate 1 is Pyrex, its softening point is 660 DEG C, the power output of radio-frequency power supply
For 185W, bombardment time is 50 seconds；When the material of top substrate layer 2, underlying substrate 1 is quartz glass, its softening point is 1200
DEG C, the power output of radio-frequency power supply is 300W, and bombardment time is 66 seconds.
In addition, the joint connecting hole in two impenetrating thickness directions is also formed with top substrate layer 2, two joint connecting holes difference
It is corresponding with the both ends of fluid channel 3, and pluggable jointing in joint connecting hole, joint are connected by circuit with MEMS.
In addition to the implementation, the present invention can also have other embodiment.It is all to use equivalent substitution or equivalent transformation shape
Into technical scheme, all fall within the protection domains of application claims.
Claims (10)
1. a kind of micro-fluidic MEMS chip method for packing, for the top substrate layer with micro-channel structure and with top substrate layer phase
The underlying substrate of stacking connection is packaged to obtain micro-fluidic MEMS chip, it is characterised in that comprises the following steps：
The first step, prepare underlying substrate --- the thick metals of one layer of 200 ± 50nm are plated in the underlying substrate upper surface of glass material
Film, using MEMS technology, fluid channel is made on the metal film of underlying substrate；
Second step, prepare top substrate layer --- the thick metals of one layer of 200 ± 50nm are plated in the top substrate layer lower surface of glass material
Film, after smoothening photoresist on the metal film of top substrate layer, photolithographic exposure, development are carried out, etching forms micro- with underlying substrate
Runner identical pattern；
3rd step, prepare chip semi-finished product --- after top substrate layer is aligned with underlying substrate, compress to form chip by mechanical force
Semi-finished product；
4th step, chip semi-finished product preheating --- chip semi-finished product are placed in vacuum chamber of the vacuum less than 0.0001Pa,
Irradiation far infrared is preheated to 350 ± 50 DEG C and is incubated 2 ± 1 minutes；
5th step, radio-frequency power supply bombardment chip semi-finished product --- radio-frequency power supply produces 13.56 ± 5MHZ electromagnetic wave, and in electromagnetism
200 ± 50W energy is modulated on ripple, electromagnetic wave is gathered in metal film, metal film electromagnetic wave absorption energy through upper and lower laminar substrate
After heat up, melt the surface of upper and lower laminar substrate at the temperature higher than glass softening point, top substrate layer and underlying substrate welding
Form micro-fluidic MEMS chip.
2. a kind of micro-fluidic MEMS chip method for packing according to claim 1, it is characterised in that in first, second step, adopt
Metal coating processing is carried out to upper and lower laminar substrate with magnetron sputtering, evaporation or electro-plating method.
3. a kind of micro-fluidic MEMS chip method for packing according to claim 1, it is characterised in that miniflow is made in the first step
The specific method in road is as follows：After one layer of 2000 thick metal shadowing material of Ethylmercurichlorendimide is plated on the metal film of underlying substrate, in metal
One layer of photoresist of spin coating on masking layer, and by photolithographic exposure, development on a photoresist formed needed for fluid channel pattern, then adopt
Fluid channel is formed on underlying substrate with dry or wet etch technology.
A kind of 4. micro-fluidic MEMS chip method for packing according to claim 3, it is characterised in that the metal shadowing material
For gold or chromium.
A kind of 5. micro-fluidic MEMS chip method for packing according to claim 1, it is characterised in that in the 4th step, radio frequency electrical
When source is bombarded chip structure, the temperature on the upper and lower laminar substrate surface of glass material is detected in real time using infrared radiation thermometer,
And the temperature signal for gathering infrared radiation thermometer is delivered to radio-frequency power supply controller, radio-frequency power supply controller is by finely tuning radio frequency electrical
The power output in source is controlled to upper and lower laminar substrate surface temperature.
A kind of 6. micro-fluidic MEMS chip method for packing according to claim 5, it is characterised in that the upper and lower laminar substrate
Material be high boron glass, Pyrex or quartz glass.
7. a kind of micro-fluidic MEMS chip method for packing according to claim 6, it is characterised in that when upper and lower laminar substrate
When material is high boron glass, its softening point is 580 DEG C；When the material of upper and lower laminar substrate is Pyrex, its softening point is
660℃；When the material of upper and lower laminar substrate is quartz glass, its softening point is 1200 DEG C.
8. a kind of micro-fluidic MEMS chip method for packing according to claim 7, it is characterised in that when upper and lower laminar substrate
When material is high boron glass, the bombardment time of radio-frequency power supply is 30 seconds, radio-frequency power 200W；When the material of upper and lower laminar substrate
For Pyrex when, the bombardment time of radio-frequency power supply is 50 seconds, radio-frequency power 185W；When the material of upper and lower laminar substrate is stone
During English glass, the bombardment time of radio-frequency power supply is 66 seconds, radio-frequency power 300W.
9. a kind of micro-fluidic MEMS chip method for packing according to claim 1, it is characterised in that in second step, described
Also it is formed with the joint connecting hole in two impenetrating thickness directions in top substrate layer, two joint connecting holes both ends pair with fluid channel respectively
Should, and pluggable jointing in the joint connecting hole, the joint are connected by circuit with MEMS.
10. a kind of micro-fluidic MEMS chip method for packing according to claim 1, it is characterised in that upper and lower in the 3rd step
There is 1.2MPa/cm between laminar substrate2Pressure.
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Cited By (5)
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| CN109607471A (en) * | 2018-12-11 | 2019-04-12 | 吉林大学 | The super-micro syringe and preparation method thereof of picoliters magnitude based on patterned surface |
| CN109931825A (en) * | 2018-11-21 | 2019-06-25 | 北京理工大学 | A kind of MEMS electromagnetic energy applied to fuse dredges device and preparation method thereof |
| CN110790216A (en) * | 2018-08-01 | 2020-02-14 | 华域视觉科技(上海)有限公司 | Transmission-type MEMS chip and lighting system |
| CN111495448A (en) * | 2020-04-08 | 2020-08-07 | 中国科学院微电子研究所 | Micro-channel chip, photonic integrated chip and photonic integrated sensor |
| CN113023666A (en) * | 2021-02-23 | 2021-06-25 | 太原理工大学 | Encapsulating method for silicon-based flat micro heat pipe |
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