1247379 Λ 曰 _修正 案號 90120WQ 五、發明說明（1) 本發明是有调於半導體積體雷 .1247379 Λ 曰 _ Amendment Case No. 90120WQ V. Description of the Invention (1) The present invention is tuned to a semiconductor integrated body.
Cs)之衣釭技術，特別是有關於雙鑲嵌結 damascene)的製作方法，Α 可 μ 、 層（bottom st〇p layer)所造^核衫底層㈣停止 孰征俅邊層的過程中產生孔洞。 年來’為了配合積體電路 菸接古々此4品於、太ώ a U 1干人T、％小化的發展以 及&冋7C件操作速度的需求，具有 移阻抗的銅金屬，已逐漸被岸用來你：：：數和南電子遷 „ ^ t / 所破應用來作為金屬内連線的材 貝’取代以在的紹金屬製程技術。銅金屬的鑲嵌式 (d a m a s c e n e )内連、線技4奸，尤禮可、去艺，上、 、b 不僅可達到内連線的縮小化並 且可減少RC時間延遲，同時也解決了金屬銅勉刻不易的問 題，因此已成為現今多重内連線主要的發展趨勢。 請爹照第1圖，其為習知技術形成之雙鑲嵌結構剖面 圖，該結構在填入銅金屬以及施以銅金屬平坦化之後即 成銅金屬内連線。 形成上述第1圖的步驟為，在形成有導電區域丨2 (例如 銅内連線）的半導體基底1 〇上依序形成蝕刻停止層丨4、介 電層16、蝕刻停止層18、介電層20、防反射遮蔽層22，狹 後利用傳統的微影技術以及選擇性蝕刻上述防反射遮蔽層 2 2、介電層2 0、蝕刻停止層1 8、介電層丨6直到露出上述蝕 刻停止層1 4為止’以形成接觸孔2 4。接著，利用旋塗 (spin coating)的方式在上述接觸孔24填入例如伸芳香基 醚類聚合物（polyUrylene ether) p〇lymer)，具體例 ^ Schumacher公司所製造的PAE-2或是Allied Signal公司所 製造的FLARE、H0SP ' L0SP等有機聚合物材料，以當作後 0503-6582TWFl.ptc 第5頁 1247379 五、發明說明（2) 續蝕刻步驟的犧牲保護會2 6 1來避免上述底層蝕刻声 1 4受損。 曰 然而，接觸孔24的尺寸已逐漸縮小至〇. 3 /zm甚至〇. 2 # ^以下，並且上述當作犧牲保護層26的傳統有機材料具 有高黏度及填入均一度不佳的特性，所以容易產生如第j 圖所示的孔洞（void)30，此將使得犧牲保護層26在後續溝 槽餘刻的過程之保護效果大受影響。 一 有鑑於上述習知技術的問題，係有人提出採用i — line ，阻^料當作犧牲保護層，由於其具有極佳的填溝能力， 月b夠/肖除習知的孔洞問題，防止底層蝕刻停止層被蝕穿。 有鑑於此，本發明提供一種雙鑲嵌結構的製作方法， 括：先’在上述半導體基底上依序形成一第一蝕刻 ^ , 弟一介電層、第二蝕刻停止層以及第二介電層。 Ϊ:丄：ί接觸孔於上述第二介電層、第二蝕刻停止層及 光阻二耷二之十，以露出上述第一蝕刻停止層。再形成一 光阻插塞及第二id ίζ佈一正光阻層於上述 電層之上，其中上述正光阻層之减；*特 性不同於上述光阻插塞。再 I之α應特 3 成溝槽圖案並露出上述光阻插塞及上述第二介電 f ’ ：、中上述光阻插塞不受上述微影製程之影響。接下 電戶以ΐίί 3 ΐ圖案及上述光阻插塞為罩幕，蝕刻第二介 電層，直到路出上述筮― 德，本疒ρ+、# ^ 第一蝕刻停止層以形成一溝槽，最 去除上述接觸孔中之光阻插塞而 上述雙鑲嵌結構的制从七又叉蛾肷、、口稱 ^ ^ ^ ^ s 〇 I作方法，更包括去除上述接觸孔 -----述第一 ”電層表面上形成之防反射 第6頁 0503-6582TWFl.ptc 1247379Cs) 釭 釭 technology, especially for the fabrication of double damascene damascene), Α μ, layer (bottom st〇p layer) made of nucleus bottom layer (4) to stop the engraving of the edge layer in the process of creating holes . In the past year, in order to cooperate with the integrated circuit, the four kinds of products, the development of the U 1 dry person T, the development of the small and the operation speed of the 7C parts, the copper metal with shift resistance has gradually Used by the shore for you::: and the number of South Electronics moved to ^ ^ / broken application as a metal interconnect wire material replaced by the metal technology in the process. Copper metal mosaic (damascene) inline, Line skills, ritual, ritual, go, art, up, b can not only achieve the reduction of the interconnection and reduce the RC time delay, but also solve the problem of metal copper engraving is not easy, so it has become more than today The main development trend of the connection. Please refer to Fig. 1, which is a cross-sectional view of a dual damascene structure formed by the prior art, which is formed into a copper metal interconnect after the copper metal is filled and the copper metal is flattened. The step of forming the first FIG. 1 is to sequentially form an etch stop layer 丨4, a dielectric layer 16, an etch stop layer 18, and a dielectric on the semiconductor substrate 1 on which the conductive region 丨2 (for example, a copper interconnect) is formed. Layer 20, anti-reflection shielding layer 22, narrowly utilized The lithography technique and the selective etching of the anti-reflection shielding layer 2, the dielectric layer 20, the etch stop layer 18, and the dielectric layer 丨6 until the etch stop layer 14 is exposed to form a contact hole 24 Then, the contact hole 24 is filled with, for example, a polyUrylene ether p〇lymer by spin coating, and the specific example is PAE-2 or Allied manufactured by Schumacher. Organic polymer materials such as FLARE and H0SP 'L0SP manufactured by Signal Corporation, as the latter 0503-6582TWFl.ptc page 5 1247379 V. Invention description (2) Continued etching step sacrificial protection meeting 2 6 1 to avoid the above bottom layer The etching sound 14 is damaged. However, the size of the contact hole 24 has been gradually reduced to 〇. 3 /zm or even #. 2 # ^ below, and the above-mentioned conventional organic material serving as the sacrificial protective layer 26 has high viscosity and filled in. Uniformly poor characteristics, so it is easy to produce a void 30 as shown in Fig. j, which will greatly affect the protective effect of the sacrificial protective layer 26 in the subsequent trench remnant process. Know the technical problems, It has been proposed to use i-line as a sacrificial protective layer. Due to its excellent filling ability, the monthly b is sufficient to eliminate the conventional hole problem and prevent the underlying etch stop layer from being etched. The present invention provides a method for fabricating a dual damascene structure, comprising: first forming a first etch, a dielectric layer, a second etch stop layer, and a second dielectric layer on the semiconductor substrate.丄: ί contact holes in the second dielectric layer, the second etch stop layer and the photoresist two to two to expose the first etch stop layer. And forming a photoresist plug and a second id ζ 一 a positive photoresist layer on the electrical layer, wherein the positive photoresist layer is reduced; the characteristic is different from the photoresist plug. Further, the α of the I should be in a groove pattern and expose the photoresist plug and the second dielectric f ′ : , wherein the photoresist plug is not affected by the lithography process. After the electrician connects the ΐίί 3 ΐ pattern and the above-mentioned photoresist plug as a mask, the second dielectric layer is etched until the above-mentioned 筮 德, 疒 ρ+, # ^ first etch stop layer is formed to form a trench a slot for removing the photoresist plug in the contact hole, and the double damascene structure is formed by a method of removing a contact hole from a seven-and-forked moth, and a method of removing the contact hole---- Anti-reflection formed on the surface of the first "electric layer" page 6 0503-6582TWFl.ptc 1247379
遮蔽層的步驟。上述'第 氮化矽或氮氧化矽層， 二氧化碎。 -触刻停止層及第二蝕刻停止層 且上述第一介電層及第二介電層 為 為 再者，上述第二介電層 例如為氮氧化矽或有機底部 為了讓本發明之上述目 懂，下文特舉一較佳實施例 明如下： 表面上形成之防反射遮蔽層， 防反射層。 的、特徵、和優點能更明顯易 ’並配合所附圖式，作詳細說 圖式簡單說明 第1圖為習知用以埴λ力 示音圖。 真入鋼内連線之雙鑲嵌結構的剖面 第2a〜第2f圖為太 馬$ ^明之雙鑲嵌結構的製程剖面示意 [符號說明] 習知技術 1 2〜導電區域； 1 6、2 0〜介電層； 2 4〜接觸孔； 3 0〜孔洞。 1 02〜導電區域； 1 0 8〜第二蝕停止層 1 12〜防反射遮蔽層 1 0〜半導體基底； 1 4、1 8〜兹刻停止層 2 2〜防反射遮蔽層； 26〜犧牲保護層； 本發明 底 層 100〜半導體（矽）基 1 0 4〜第一 I虫刻停止 106、110〜金屬間介電層； 1247379 __ 案號 90120219 五、發明說明（4) I 13〜接觸孔； II 6〜光.罩； 118a、118b〜正型光阻罩幕； 1 3 0〜溝槽蝕刻用光阻圖案；1 2 0〜溝槽； DD〜雙鑲嵌結構。 實施例 以下利用第2 a〜第2 d圖所示之雙鑲嵌結構的製程剖面 圖，以更詳細地說明本發明。 首先’睛參照第2 a圖’形成該剖面圖的步驟為，首 先’在形成有導電區域1 〇 2 (例如銅内連線）的半導"體基底 100上依序形成第一巍刻停止層1〇4、介電層、第二|虫 刻停止層1 08、介電層11 〇、防反射遮蔽層丨丨2。上述介電 層1 0 6、1 1 0例如為化學氣相沈積法形成之二氧化石夕層戋豆 他低介電常數材料層，第一、第二飯刻停止層1〇4 ^^ 防反射遮蔽層11 2係由氮化矽或氮氧矽化物構成。 接著，於上述防反射遮蔽層112上塗佈一層正型光阻 I 1 8，透過一光罩11 β在欲形成接觸孔的位置對該正型光阻 層118進行曝光、顯影，以形成一正型光阻罩幕ιΐ8&、 118b，如第2b圖中所示。 接著，參照第2c圖，使用上述正型光阻罩幕n8a、 II 8b當作遮蔽物，蝕刻上述防反射遮蔽層丨丨2、上述第二 Π層二I、/二蝕刻停止層108及第一介電層106直到露 ”：：刻：止層104為止，以在上述導電區域102相對位 置上形成一接觸孔1 1 3。 第8頁 0503-6582TWFl.ptc 五、發明說明（5) ^^ Ϊ ’塗佈一光阻材料於上述接觸孔1 1 3中，接著以 t二^二光進行照射使之硬化，形成一光阻插塞1 14a，以 /nzi蝕刻步驟的保護結構，來避免第一蝕刻停止層 来a又姑V ^第2d圖所示，其中上述插塞可選擇非深外線 ^ ^丄斜，如為負光阻型式以加熱或其他方式使之硬化， 插塞材料係不與後續微影製程中，使用之深紫外 線產生反應。 …、後’清參照第2e圖，利用微影技術進行塗佈深紫外 )光阻材料、曝光、顯影、烘烤等步驟，以形 友丨® i人，明參照第2 f圖，利用上述光阻圖案13 〇當作蝕 ，接著’蝕刻防反射遮蔽層112、介電層ιι〇，直到 刻二止層108為止’以形成溝槽120，其與接觸 法去Λ Λ 結構DD °緊接著，以乾式及㈣清除方 ^去除上述光阻圖案130及光阻插塞114a ’如第2f圖中所 102 /面績還以包上去除第一敍刻停止層104以露出導電，區域 ^真入銅等金屬以形成内連線的步驟。 f明採用光阻插塞當作保護結構，由 ΓΠΓΪ外光產生反應，所以能夠確實防止底ΐ: 停止層被蝕穿，進而提高產品良率。 -a蝕刻 雖然本發明已以較佳實施例揭露如上，铁i並 rtrr丄=熟習此技藝者’在不脫離；發明之精‘ =内，當可作些許之更動與潤舞，因此本發 3 耗圍*視後附之申請專利範圍所界定者為準。 ”濩The step of masking the layer. The above-mentioned 'the first layer of tantalum nitride or oxynitride is oxidized and crushed. a etch stop layer and a second etch stop layer, wherein the first dielectric layer and the second dielectric layer are, for example, bismuth oxynitride or an organic bottom layer, in order to achieve the above object of the present invention It is to be understood that a preferred embodiment is as follows: an anti-reflection shielding layer formed on the surface, an anti-reflection layer. The features, features, and advantages of the present invention are more apparent and easy to use and are described in detail with reference to the drawings. FIG. 1 is a conventional diagram for 埴λ force. Sections 2a to 2f of the double damascene structure of the true steel connection line are schematic diagrams of the process of the Taima $^ Ming's double damascene structure [Symbol Description] Conventional Technology 1 2~ Conductive Area; 1 6, 2 0~ Dielectric layer; 2 4~ contact hole; 3 0~ hole. 1 02 ~ conductive area; 1 0 8 ~ second etch stop layer 1 12 ~ anti-reflection shielding layer 1 0 ~ semiconductor substrate; 1 4, 1 8 ~ stop layer 2 2 ~ anti-reflection shielding layer; 26 ~ sacrificial protection Layer; the bottom layer 100~ semiconductor (矽) base of the invention 1 0 4~ first I insect stop 106, 110~ intermetal dielectric layer; 1247379 __ case number 90120219 5. Invention description (4) I 13~ contact hole; II 6 ~ light. Cover; 118a, 118b ~ positive resist mask; 1 3 0 ~ trench etching resist pattern; 1 2 0 ~ trench; DD ~ dual damascene structure. EXAMPLES Hereinafter, the present invention will be described in more detail by way of a process sectional view of a double damascene structure shown in Figs. 2a to 2d. First, the step of forming the cross-sectional view with reference to FIG. 2 a is to first form a first engraving on the semi-conductive body substrate 100 on which the conductive region 1 〇 2 (for example, a copper interconnect) is formed. The stop layer 1〇4, the dielectric layer, the second|insert stop layer 108, the dielectric layer 11〇, and the anti-reflection shielding layer 丨丨2. The dielectric layer 1 0 6 , 1 1 0 is, for example, a layer of a low dielectric constant material formed by a chemical vapor deposition method, the first and second rice stop layers 1〇4 ^^ The reflective shielding layer 11 2 is composed of tantalum nitride or oxynitride. Then, a positive-type photoresist I 1 8 is applied onto the anti-reflection shielding layer 112, and the positive-type photoresist layer 118 is exposed and developed through a mask 11 β at a position where a contact hole is to be formed to form a Positive photoresist masks ιΐ8&, 118b, as shown in Figure 2b. Next, referring to FIG. 2c, the positive-type resist masks n8a and II8b are used as a shield to etch the anti-reflection shielding layer 丨丨2, the second Π layer II I, the second etch stop layer 108, and the first A dielectric layer 106 is formed until a stop layer 104 is formed to form a contact hole 1 1 3 at a position opposite to the conductive region 102. Page 8 0503-6582TWFl.ptc V. Description of the invention (5) ^ ^ Ϊ 'coating a photoresist material in the above contact hole 1 1 3, followed by irradiation with t bis 2 light to harden it, forming a photoresist plug 1 14a, with the protective structure of the /nzi etching step, Avoiding the first etch stop layer to be aV V ^ 2d, wherein the plug may select a non-deep outer line ^ ^ skew, such as a negative photoresist type to heat or otherwise harden the plug material It does not react with the deep ultraviolet rays used in the subsequent lithography process. ..., after the 'clear reference to Figure 2e, using lithography to apply deep ultraviolet) photoresist, exposure, development, baking, etc.形 丨 i i i i i i i i i i i i i i i i i i i i i i i i 'etching the anti-reflection shielding layer 112, the dielectric layer ιι until the second stop layer 108' to form the trench 120, which is followed by the contact method Λ Λ structure DD °, followed by dry and (4) cleaning The photoresist pattern 130 and the photoresist plug 114a' are as shown in FIG. 2f, and the first stop layer 104 is removed to expose the conductive region, and the region is actually inserted into a metal such as copper to form an interconnect. The step of f is to use the photoresist plug as a protective structure, and the reaction is generated by the external light, so that the bottom layer can be surely prevented: the stop layer is etched, thereby improving the product yield. -a etching although the invention has been The preferred embodiment discloses the above, the iron i and rtrr丄 = familiar with the skilled person 'in the absence of the invention; the essence of the invention' = when the change can be made and the dance, so the hair of the 3 The scope defined by the patent scope shall prevail.