TWI246532B - Polishing of semiconductor substrates - Google Patents

Polishing of semiconductor substrates Download PDF

Info

Publication number
TWI246532B
TWI246532B TW091100298A TW91100298A TWI246532B TW I246532 B TWI246532 B TW I246532B TW 091100298 A TW091100298 A TW 091100298A TW 91100298 A TW91100298 A TW 91100298A TW I246532 B TWI246532 B TW I246532B
Authority
TW
Taiwan
Prior art keywords
dielectric layer
layer
polishing
barrier layer
remove
Prior art date
Application number
TW091100298A
Other languages
English (en)
Chinese (zh)
Inventor
Quiliang Luo
Qianqiu Ye
Kelly H Block
Original Assignee
Rohm & Haas Elect Mat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/759,583 external-priority patent/US20020132560A1/en
Application filed by Rohm & Haas Elect Mat filed Critical Rohm & Haas Elect Mat
Application granted granted Critical
Publication of TWI246532B publication Critical patent/TWI246532B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW091100298A 2001-01-12 2002-01-11 Polishing of semiconductor substrates TWI246532B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/759,583 US20020132560A1 (en) 2001-01-12 2001-01-12 Polishing method for selective chemical mechanical polishing of semiconductor substrates
US10/005,253 US6676718B2 (en) 2001-01-12 2001-12-04 Polishing of semiconductor substrates

Publications (1)

Publication Number Publication Date
TWI246532B true TWI246532B (en) 2006-01-01

Family

ID=26674130

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091100298A TWI246532B (en) 2001-01-12 2002-01-11 Polishing of semiconductor substrates

Country Status (5)

Country Link
US (1) US6676718B2 (https=)
EP (1) EP1352418A2 (https=)
JP (1) JP4000059B2 (https=)
TW (1) TWI246532B (https=)
WO (1) WO2002056351A2 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6811680B2 (en) * 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
US7416680B2 (en) * 2001-10-12 2008-08-26 International Business Machines Corporation Self-cleaning colloidal slurry composition and process for finishing a surface of a substrate
US20040082274A1 (en) * 2002-10-24 2004-04-29 Yaojian Leng Polishing slurry used for copper chemical mechanical polishing (CMP) process
US6916742B2 (en) * 2003-02-27 2005-07-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Modular barrier removal polishing slurry
US7241725B2 (en) * 2003-09-25 2007-07-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Barrier polishing fluid
US7022255B2 (en) * 2003-10-10 2006-04-04 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition with nitrogen containing polymer and method for use
US20050194562A1 (en) * 2004-02-23 2005-09-08 Lavoie Raymond L.Jr. Polishing compositions for controlling metal interconnect removal rate in semiconductor wafers
JP4532149B2 (ja) * 2004-03-30 2010-08-25 ニッタ・ハース株式会社 シリコンウエハ研磨用組成物およびシリコンウエハの研磨方法
US7504044B2 (en) * 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7531105B2 (en) * 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US20060135045A1 (en) * 2004-12-17 2006-06-22 Jinru Bian Polishing compositions for reducing erosion in semiconductor wafers
JP4918223B2 (ja) * 2005-01-13 2012-04-18 ニッタ・ハース株式会社 シリコンウエハ研磨用組成物およびシリコンウエハの研磨方法
US7179159B2 (en) * 2005-05-02 2007-02-20 Applied Materials, Inc. Materials for chemical mechanical polishing
JP5121128B2 (ja) * 2005-06-20 2013-01-16 ニッタ・ハース株式会社 半導体研磨用組成物
KR100813100B1 (ko) * 2006-06-29 2008-03-17 성균관대학교산학협력단 실시간 확장 가능한 스테레오 매칭 시스템 및 방법
US20100087065A1 (en) * 2007-01-31 2010-04-08 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
US7696095B2 (en) * 2007-02-23 2010-04-13 Ferro Corporation Auto-stopping slurries for chemical-mechanical polishing of topographic dielectric silicon dioxide
JP5507909B2 (ja) * 2009-07-14 2014-05-28 東京エレクトロン株式会社 成膜方法
US9203030B2 (en) * 2011-05-16 2015-12-01 Georgia Tech Research Corporation Recyclable organic solar cells on substrates comprising cellulose nanocrystals (CNC)
KR20140034231A (ko) * 2011-05-24 2014-03-19 가부시키가이샤 구라레 화학 기계 연마용 부식 방지제, 화학 기계 연마용 슬러리, 및 화학 기계 연마 방법
US20180244955A1 (en) * 2017-02-28 2018-08-30 Versum Materials Us, Llc Chemical Mechanical Planarization of Films Comprising Elemental Silicon
EP4045226B1 (en) * 2019-10-15 2024-01-03 FUJIFILM Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
CN120749008B (zh) * 2025-08-28 2025-12-16 合肥晶合集成电路股份有限公司 半导体器件的制造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4867757A (en) 1988-09-09 1989-09-19 Nalco Chemical Company Lapping slurry compositions with improved lap rate
JP2714411B2 (ja) 1988-12-12 1998-02-16 イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー ウェハーのファイン研摩用組成物
JP2987171B2 (ja) * 1990-06-01 1999-12-06 イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー ウエハーのファイン研磨用濃縮組成物
WO1996038262A1 (en) 1995-06-01 1996-12-05 Rodel, Inc. Compositions for polishing silicon wafers and methods
US5614444A (en) 1995-06-06 1997-03-25 Sematech, Inc. Method of using additives with silica-based slurries to enhance selectivity in metal CMP
US5676587A (en) 1995-12-06 1997-10-14 International Business Machines Corporation Selective polish process for titanium, titanium nitride, tantalum and tantalum nitride
US5876490A (en) 1996-12-09 1999-03-02 International Business Machines Corporatin Polish process and slurry for planarization
US5756398A (en) 1997-03-17 1998-05-26 Rodel, Inc. Composition and method for polishing a composite comprising titanium
KR100581649B1 (ko) 1998-06-10 2006-05-23 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 금속 ｃｍｐ에서 광택화를 위한 조성물 및 방법
JP2002528903A (ja) 1998-10-23 2002-09-03 アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド 活性剤溶液を含有し、化学機械的に磨くためのスラリーシステム
US6083840A (en) 1998-11-25 2000-07-04 Arch Specialty Chemicals, Inc. Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
JP4053165B2 (ja) 1998-12-01 2008-02-27 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
US6503418B2 (en) 1999-11-04 2003-01-07 Advanced Micro Devices, Inc. Ta barrier slurry containing an organic additive
IL149987A0 (en) 1999-12-07 2002-12-01 Cabot Microelectronics Corp Chemical-mechanical polishing method
US6524168B2 (en) * 2000-06-15 2003-02-25 Rodel Holdings, Inc Composition and method for polishing semiconductors
FR2848219B1 (fr) 2002-12-09 2006-12-01 Centre Nat Rech Scient Materiau composite utilisable comme revetement lubrifiant

Also Published As

Publication number Publication date
JP4000059B2 (ja) 2007-10-31
US6676718B2 (en) 2004-01-13
EP1352418A2 (en) 2003-10-15
WO2002056351A2 (en) 2002-07-18
US20020132563A1 (en) 2002-09-19
JP2004526301A (ja) 2004-08-26
WO2002056351A3 (en) 2002-11-28

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