1245352 九、發明說明： 【發明所屬之技術領域】 本發明係有關一種影像感測元件封裝之技術領域，尤 指一種以單晶矽為基材，經蝕刻後裝置影像感測晶片及線 路再封裝，而能有效減少封裝面積並提高散熱效果之封裝 方法。 【先前技術】 知：，習用之影像感測元件結構，如我國專利公告第5 5 1 6 1 〇號案（第5圖所示），其係於一基板7 X上先設 置數個間隔之金屬片72、73、74，其中金屬片72 、74係向外延伸出該基板7 1，並於各金屬片7 2、7 4之外侧端黏設一框壩7 5，使基板7 1與框壩7 5間界 定出一容置部76,再於金屬片7 3上電性連接一影像感 測曰曰片7 7，且以導線7 8電性連接影像感測晶片7 7與 各金屬片7 2、7 4 ’最後以-透光板7 9黏合於框壩7 5 ’而將影像感測晶片7 7封裝於容置部7 6中，完成影 像感測元件之製作。 月ίι述之結構，由於需先黏設框壩7 5，才能再於框壩 7 5黏設透光板7 9，其程序較繁瑣成本較高。而且由於 各金屬ϋ 7 2、7 4需向外延伸出該基板7工以供與電路 板連接，因此整個影像感測元件封裝後的體積會較大，而 難以達到輕薄短小的需求，此外，由於框壩7 5與各金屬 1245352 片7 2、7 4父接處係呈直角形態容易藏有雜質，且不易 清洗，而易影響成品品質。 為克服4述問題便有業者研發出改良型之影像感測元 件，如我國專利公告第5 7 7 6 3 6號案（第6圖所示） ，其係先製備數個間隔之金屬片82、83、84，各金 屬片8 2、8 4分別具有一傾斜段8 2工、8 4工，而於 射出成型基板8 1之過程中，使各金屬片8 2、8 3、8 4與基材8 1結合，並且於各金屬片82、8；3、84與 基材8 1間形成-容置部8 5，再於金屬片8 3上電性連 =片86與各金屬片82、84，最後以—透光板88黏 口於口孟屬片82、84與基板8 1底緣，而將影像感測 晶片8 6封裝於容置部8 5巾，完成影像感測元件之製作 〇 x此方法製成之影像感測元件，只需進行一次透光 板8 8的黏合’其製程較單純，再者，由於各金屬片8 2 、8^分別具有傾斜段82 1、84 1，因此容置部85 中不會產生屯積雜質的死角，而能避免雜質影響成品品質 的問題。 、 w但是’為了與外部電路連接，各金屬片82、84仍 必需延伸出透光板8 8—段距離，如此之結構仍不能解決 1245352 影像感測元件封裝後體積較大的問題。 再者，前述的兩種影像感測元件均係以塑膠材料為基 材，但是塑膠材料的熱傳導性不佳且易變形，因此整個影 像感測元件會有散熱不良的問題，故而前述的兩種影像感 測元件仍有加以改進之必要。 【發明内容】 本發明之主要目的，在於解決上述的問題而提供一種 半導體影像感測元件之封裝方法’其主要係以早晶發晶片 為製程基材，利用蝕刻方式將基材部分蝕穿，而於基材上 部半形成一容置部，並於基材下半部形成數個穿孔，且用 加溫加壓的方式將錫球填滿並固定於各穿孔，使影像感測 晶片可裝置於該容置部後能於影像感測晶片與各穿孔之錫 球間打線，而可由各錫球之底部與外部電路板的線路連接 ，以達到減少影像感測元件封裝後之體積的功效。 本發明之次一目的，係在於其係以單晶矽晶片為基材 ，而可利用單晶矽較佳的熱傳導性，來達到提升散熱效果 之功效。 為達前述之目的，本發明之半導體影像感測元件之封 裝方法，其包括下列步驟： a ·備料： 選用單晶矽晶片為製程基材； 1245352 b·形成保護層： 將基材置於爐管内，於基材的兩面形成一保護層； c·定義蝕刻孔： 利用微影製程分別於基材的兩面，以蝕刻方式將部份 保護層去除，使欲蝕刻之基材表面區域裸露； d ·触刻： 利用非等向性濕蝕刻方式，對基材兩面不具保護層的 部份進行蝕刻，將基材部份蝕穿，而於基材上部半形 成一容置部，並於基材下半部形成數個穿孔； e ·形成電性絕緣層： 將完成蝕刻步驟的基材置於爐管内，而於容置部及各 穿孔周面形成電性絕緣層； f·填滿穿孔： 將錫球逐一植入各穿孔，利用加溫加壓的方式，使錫 球軟化後填滿並固定於各穿孔； g·裝置影像感測晶片： 將影像感測晶片裝置於容置部，且位於各穿孔之間， 並於影像感測晶片與各穿孔之錫球間打線，以完成電 性連接； h ·封蓋： 以一透明板結合於基材頂面之保護層，而將影像感測 1245352 晶片封裝於容置部中。 據此，可有效降低影像感測元件封裝後之體積，且單 晶矽之基材有利於提升散熱效果。此外，透過整個矽 基材濕蝕刻批量製造的方式，在結合整個上面的封蓋 之後，也可以達到晶圓級封裝的目的。 本發明之上述及其他目的與優點，不難從下述所選用 實施例之詳細說明與附圖中，獲得深入了解。 當然，本發明在某些另件上，或另件之安排上容許有 所不同，但所選用之實施例，則於本說明書中，予以詳細 說明，並於附圖中展示其構造。 【實施方式】 請參閱第1圖及第4圖，圖中所示者為本發明所選用 之實施例，此僅供說明之用，在專利申請上並不受此例之 限制。 本實施例之半導體影像感測元件之封裝方法，其包括 下列步驟： a ·備料· 選用單晶矽晶片為製程基材1。 b·形成保護層： 將基材1置於爐管内，於基材1的兩面以熱氧化方式 成長一層二氧化矽或者以沉積方式成長一層氮化矽作為一 1245352 保護層1 1、1 2。 c·定義蝕刻孔： 利用微影製程分別於基材1的兩面以B〇E濕蝕刻方 式或R I E乾蝕刻方式將部份保護層去除，使欲進行後續 触刻之基材1表面區域裸露。 d ·姓刻： 利用K〇Η或TMAH非等向性濕蝕刻方式，對基材1兩 面不具保護層1 1、1 2的部份進行蝕刻，將基材1蝕穿 ，而於基材1上部半形成一容置部1 3，並於基材1下半 部形成數個穿孔1 4，如第2圖所示。 e ·形成電性絕緣層： 將完成蝕刻步驟的基材1置於爐管内，以熱氧化方式 成長一層二氧化矽或者以沉積方式成長一層氮化矽於容置 部1 3及各穿孔1 4周面，形成一電性絕緣層15。 f ·填滿穿孔： 將錫球1 6逐一植入各穿孔1 4，並予以加溫加壓， 於本實施例中係置於烤箱内或加熱板上進行，當然亦可利 用探針直接對錫球加溫加熱，使錫球1 6軟化後填滿並固 定於各穿孔1 4。 g·裝置影像感測晶片： 將影像感測晶片2裝置於容置部1 3，且位於各穿孔 1245352 1 4之間，並於影像感測晶片2與各錫球1 6間打線1 7 ^以完成電性連接。 h ·封蓋： 以一透明板1 8結合於基材1頂面之保護層1 1，而 將影像感測晶片2封裝於容置部1 3中，如此即完成影像 感測元件之封裝，如第3圖所示，而後再進行切割而形成 影像感測元件之單體，如第4圖所示。 由於本發明之封裝方法中係以蝕刻方式在單矽晶材質 之基材1上分別蝕刻出容置部1 3與數個穿孔1 4，容置 部1 3可供裝置影像感測晶片2,而且各穿孔14中可植 入錫球1 6，在將錫球1 6加溫加壓後，便能使錫球1 6 填滿並固定於各穿孔1 4，如此一來，在影像感測晶片2 與各錫球1 6間打線後，便能由各錫球1 6之底部與外部 電路板的線路連接，因此，本發明不需如先前技術一般將 金屬向外延伸出基板來與電路板連接，而可有效減少封裝 後之體積，而更符合輕薄短小的需求。 再者，本發明係以單晶矽晶片為製程基材，與先前技 術使用塑膠材料為基材相較，本發明所使用之單晶矽具有 較佳的熱傳導性，而能提高影像感測晶片2之散熱效率。 綜上所述，本發明確能達到減少影像感測元件封裝後 之體積以及提升散熱效果之兩種功效。此外，透過整個矽 11 1245352 基材濕蝕刻批量製造的方式，在处入 八在結合整個上面的封蓋之後 ，也可以達到晶圓級封裘的目的。 以上所述實施狀揭示剌以㈣本發明，並非用以 限制本發明，故舉絲值之變更鱗效元叙置換仍應隸 屬本發明之範疇。 由以上詳細說明， 石ΐ可達成前述目的，實 申請。 可使熟知本項技藝者明瞭本發明的 已符合專利法之規定，爰提出專利 【圖式簡單說明】 第1圖係本發明封裝結構之製程步驟示意圖 第2圖係本發明蝕刻步驟後基材外觀圖 第3圖係本發明封裝完成後之結構示意圖 第4圖係本發明之影像❹彳元件單體之外觀圖 第5圖係f用之影像感測元件結構示意圖 第6圖係習用改良型影像感測元件之結構示意圖 【圖號說明】 金屬片7 2、7 3、7 4 容置部7 6 導線7 8 (習用部分） 基板7 1 框壩7 5 影像感測晶片7 7 透光板7 9 1245352 基板81 金屬片82、83、84 傾斜段8 2 1、8 4 1 容置部8 5 影像感測晶片8 6 導線8 7 透光板8 8 (本發明部分） 基材1 容置部1 3 電性絕緣層15 導線1 7 影像感測晶片2 保護層11、12 穿孔1 4 錫球1 6 透明板1 81245352 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to the technical field of image sensor element packaging, especially a single crystal silicon substrate, which is used to re-package image sensing chips and circuits after etching. , And a packaging method which can effectively reduce the packaging area and improve the heat dissipation effect. [Prior art] Known: The structure of conventional image sensing elements, such as China Patent Bulletin No. 5 5 1 6 10 (shown in Fig. 5), is set on a substrate 7 X first by several intervals. Metal sheets 72, 73, 74, wherein the metal sheets 72, 74 extend outward from the substrate 7 1 and a frame dam 7 5 is glued on the outer end of each metal sheet 7 2, 7 4 so that the substrate 7 1 and An accommodating portion 76 is defined between the frame dams 7, and an image sensing chip 7 7 is electrically connected to the metal sheet 7 3, and the image sensing chip 7 7 and each metal are electrically connected with a wire 7 8. Sheets 7 2, 7 4 'Finally, a light-transmitting plate 7 9 is bonded to the frame dam 7 5', and the image sensing chip 7 7 is packaged in the accommodating portion 76 to complete the production of the image sensing element. For the structure described in the month, because the frame dam 7 5 needs to be glued before the light-transmitting plate 7 9 can be glued to the frame dam 7 5, the procedure is more complicated and costly. And because each metal ϋ 7 2, 7 4 needs to extend out of the substrate 7 for connection to the circuit board, the volume of the entire image sensing element package will be larger, and it is difficult to meet the requirements of lightness, thinness, and shortness. In addition, Because the frame dam 75 and the metal 1245552 pieces 7 2, 7 4 are at right angles, the impurities are easy to hide, and it is not easy to clean, which affects the quality of the finished product. In order to overcome the problems described above, some industry researchers have developed improved image sensing elements, such as China Patent Bulletin No. 5 7 7 6 3 6 (shown in Figure 6), which first prepares several spaced metal sheets 82 , 83, 84, each metal piece 8 2, 8 4 has an inclined section 8 2 work, 8 4 work, and in the process of injection molding the substrate 8 1, each metal piece 8 2, 8 3, 8 4 and The substrate 8 1 is combined, and an accommodating portion 8 5 is formed between each of the metal sheets 82, 8; 3 and 84 and the substrate 8 1, and then electrically connected to the metal sheet 8 3 = the sheet 86 and each metal sheet 82 , 84, and finally, the light-transmitting plate 88 is adhered to the mouth 82, 84 and the bottom edge of the substrate 81, and the image-sensing chip 86 is packaged in the accommodating portion 85 to complete the image-sensing element. To make the image sensing element manufactured by this method, only one bonding of the light-transmitting plates 8 8 is required. The manufacturing process is relatively simple. Furthermore, since each of the metal sheets 8 2 and 8 ^ has inclined sections 82 1 and 84, respectively. 1. Therefore, a dead angle of accumulated impurities does not occur in the accommodating portion 85, and the problem that the impurities affect the quality of the finished product can be avoided. However, in order to connect with external circuits, each metal sheet 82, 84 must still extend a distance of 8-8 from the light-transmitting plate. Such a structure still cannot solve the problem of larger volume of the 1245352 image sensing element package. Furthermore, the aforementioned two types of image sensing elements are based on plastic materials, but the thermal conductivity of plastic materials is poor and easily deformed. Therefore, the entire image sensing element may have a problem of poor heat dissipation. There is still a need to improve image sensing elements. [Summary of the Invention] The main object of the present invention is to provide a method for packaging a semiconductor image sensing element by solving the above-mentioned problems. The method mainly uses an early-crystal wafer as a process substrate, and the substrate is partially etched by etching. An accommodating part is formed on the upper half of the substrate, and several perforations are formed on the lower half of the substrate. The solder ball is filled and fixed to each perforation by means of heating and pressure, so that the image sensing chip can be installed. Behind the accommodating portion, a wire can be wired between the image sensing chip and each of the perforated solder balls, and the bottom of each solder ball can be connected to the circuit of the external circuit board to reduce the volume of the image sensing element after packaging. A second object of the present invention is that it uses a single crystal silicon wafer as a base material, and can use the better thermal conductivity of the single crystal silicon to achieve the effect of improving the heat dissipation effect. In order to achieve the aforementioned object, the method for packaging a semiconductor image sensing element of the present invention includes the following steps: a. Material preparation: a single crystal silicon wafer is used as a process substrate; 1245352 b. Forming a protective layer: the substrate is placed in a furnace In the tube, a protective layer is formed on both sides of the substrate; c. Defining an etching hole: A part of the protective layer is removed by etching on both sides of the substrate by a lithography process, so that the surface area of the substrate to be etched is exposed; d · Etch: Use non-isotropic wet etching to etch the part without protection layer on both sides of the substrate, etch through the substrate, and form an accommodating part on the upper half of the substrate, and Several perforations are formed in the lower half; e. Forming an electrical insulating layer: placing the substrate that has completed the etching step in a furnace tube, and forming an electrical insulating layer on the receiving portion and the peripheral surface of each perforation; f. Filling the perforations: The solder balls are implanted into each perforation one by one, and the solder ball is softened and filled and fixed to each perforation by means of heating and pressure; g. Device image sensing chip: the image sensing chip is installed in the accommodating part, and Located between the perforations, and The image sensing chip is wired with the perforated solder balls to complete the electrical connection; h. Capping: A transparent plate is bonded to the protective layer on the top surface of the substrate, and the image sensing 1234552 chip is packaged in the accommodating part. in. According to this, the volume of the image sensing element after being packaged can be effectively reduced, and the substrate of monocrystalline silicon is beneficial to improve the heat dissipation effect. In addition, through the wet etching of the entire silicon substrate, the method can be used to achieve wafer-level packaging after combining the entire cap. The above and other objects and advantages of the present invention can be easily understood from the detailed description and accompanying drawings of the selected embodiments below. Of course, the present invention allows some differences in the arrangement or arrangement of other parts, but the selected embodiment is described in detail in this specification and its structure is shown in the drawings. [Embodiment] Please refer to FIG. 1 and FIG. 4. The figure shows the selected embodiment of the present invention. This is for illustrative purposes only and is not limited by this example in patent applications. The method for packaging a semiconductor image sensing element in this embodiment includes the following steps: a. Material preparation. A single crystal silicon wafer is selected as the process substrate 1. b. Forming a protective layer: The substrate 1 is placed in a furnace tube, and a layer of silicon dioxide is grown by thermal oxidation on both sides of the substrate 1 or a layer of silicon nitride is grown by deposition as a 1245352 protective layer 1 1, 12. c. Defining etched holes: Using a lithography process to remove part of the protective layer on both sides of the substrate 1 by BOE wet etching or R I E dry etching, so that the surface area of the substrate 1 to be subsequently etched is exposed. d · Surname engraving: Use K〇Η or TMAH anisotropic wet etching to etch the parts of the substrate 1 without protective layers 1 1 and 12 on both sides, and etch the substrate 1 through. An accommodating portion 13 is formed in the upper half, and a plurality of perforations 14 are formed in the lower half of the substrate 1, as shown in FIG. 2. e. Forming an electrical insulation layer: Place the substrate 1 after the etching step in a furnace tube, and grow a layer of silicon dioxide by thermal oxidation or a layer of silicon nitride by deposition in the accommodation portion 13 and the perforations 1 4 On the peripheral surface, an electrical insulating layer 15 is formed. f · Filling the perforations: The solder balls 16 are implanted into the perforations 14 one by one, and heated and pressurized. In this embodiment, they are placed in an oven or on a hot plate. Of course, a probe can also be used to directly The solder balls are heated and heated to soften the solder balls 16 and fill and fix the solder balls 14. g. Device image sensing chip: The image sensing chip 2 is installed in the accommodating part 13 and is located between the perforations 1245352 1 4 and a wire is wired between the image sensing chip 2 and each of the solder balls 1 6 ^ To complete the electrical connection. h · Cap: a transparent plate 18 is bonded to the protective layer 11 of the top surface of the substrate 1, and the image sensing chip 2 is packaged in the accommodating portion 13. Thus, the packaging of the image sensing element is completed. As shown in FIG. 3, and then cut to form a single unit of the image sensing element, as shown in FIG. 4. Since in the packaging method of the present invention, the accommodating portion 13 and a plurality of perforations 14 are etched on the single-crystal material substrate 1 by etching, the accommodating portion 1 3 can be used for the device image sensing chip 2, In addition, solder balls 16 can be implanted in each of the perforations 14. After the solder balls 16 are heated and pressurized, the solder balls 16 can be filled and fixed to each of the perforations 14. In this way, in the image sensing After the chip 2 and each solder ball 16 are wired, the bottom of each solder ball 16 can be connected to the circuit of the external circuit board. Therefore, the present invention does not need to extend the metal outward from the substrate to connect with the circuit as in the prior art. Board connection, which can effectively reduce the volume after packaging, and meet the requirements of thin, light and short. Furthermore, the present invention uses a single crystal silicon wafer as a process substrate. Compared with the prior art using a plastic material as a substrate, the single crystal silicon used in the present invention has better thermal conductivity and can improve the image sensing chip. 2 of heat dissipation efficiency. In summary, the present invention can achieve two effects of reducing the volume of the image sensing element package and improving the heat dissipation effect. In addition, through the entire silicon 11 1245352 substrate wet etching batch manufacturing method, after joining the entire upper cover, the purpose of wafer-level sealing can also be achieved. The above-mentioned embodiments are disclosed for the purpose of not limiting the present invention. Therefore, the change of scale value and meta-synthesis should still belong to the scope of the present invention. From the above detailed description, Shi Jie can achieve the aforesaid purpose and make an application. It will enable those skilled in the art to understand that the invention has complied with the provisions of the patent law, and proposed a patent. [Simplified illustration of the drawing] Figure 1 is a schematic diagram of the process steps of the packaging structure of the present invention. Figure 2 is a substrate after the etching step of the present invention. Appearance Figure 3 is a schematic diagram of the structure of the present invention after the packaging is completed. Figure 4 is an external view of the image element of the present invention. Figure 5 is a schematic diagram of the structure of an image sensing element for f. Figure 6 is a conventional modified version. Schematic diagram of the structure of the image sensing element [Illustration of the drawing number] Metal sheet 7 2, 7 3, 7 4 Receiving part 7 6 Wire 7 8 (conventional part) Substrate 7 1 Frame dam 7 5 Image sensing chip 7 7 Transparent plate 7 9 1245352 Substrate 81 Metal sheet 82, 83, 84 Inclined section 8 2 1, 8 4 1 Receiving section 8 5 Image sensing chip 8 6 Wire 8 7 Translucent plate 8 8 (part of the present invention) Substrate 1 Receiving Part 1 3 Electrical insulation layer 15 Wire 1 7 Image sensor chip 2 Protective layer 11, 12 Perforation 1 4 Tin ball 1 6 Transparent board 1 8
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