之方法，尤指一種使 乾式钱刻以及濕式钱 作用材料尺寸可控制 技術中，蝕刻（Etch) 上移除。大體上蝕刻 式蚀刻（濕式清洗）兩 加工裝置設有一喷頭 待加工物晶圓3固置 氣體4時，因地心引 ’為求晶固加工表面 將持續轉動以換位晶 以蝕刻氣體4為主要 反應。電漿對蝕刻製 電漿會將蝕刻氣體分 活性分子，同時電漿 有電荷。晶圓便置於 電離子將被陰極端吸 以獲得垂直蝕刻。然 其缺點在於钱刻凹槽 象（如第2圖所示）。 1240323 五、發明說明（1) 【發明所屬之技術領域】 本發明係有關一種晶圓精準钱刻 被加工物之晶圓片被施以蝕刻（包含 刻）時’令晶圓片之被加工表面反應 得更為精確者。 【先前技術】 按、，對於傳統半導體晶圓之製程 加工為被用來將某種材質自晶圓表面 區分為乾式餘刻（又稱電漿蝕刻）及渴 類。 請參第1圖所示，一般乾式蝕刻 1 ，於正下方設有一旋轉裝置2，將 於旋轉裝置2台上，於喷頭釋出蝕刻 力作用氣體之微粒灑佈於晶圓3表面 受蝕程度均勻化，因此其旋轉裝置2 圓面之位置。於乾式蝕刻作用下其係 的蝕刻媒介，並藉由電漿能量來驅動 程有物理與化學性兩方面的影響，即 子予分解，能產生快速蝕去材料的高 也會把這些化學成份離子化，使其帶 帶負電的陰極端上，所有帶電荷的正 附，而撞擊於晶圓表面，運用此技術 此種晶圓3於定點自轉之加工方式， 5於旋轉面外側易產生過蝕凹陷6現 ΙΜΙΙΙϋ 第5頁 1240323 五、發明說明（2) 請參第3圖所示，晶圓3之蝕刻加工，另有濕式蝕刻 加工其裝置相同設有一喷頭i 、一旋轉裝置2 ，以將待加 工物晶圓3固置於旋轉裝置2台上，所不同的是噴頭所喷 射出為#刻液體7，使液體蝕化晶圓加工表面，然所加工 之缺點亦與刖述乾式蝕刻相同缺點，於触刻凹槽5於旋轉 面外侧因離心力作用，蝕刻物質易積存於離心外側，因此 易產生過蝕凹陷6現象（如第4圖所示） 請參第5 、6圖所示，而蝕刻更包含有一種為浸蝕加 工方法’係將飯刻液體7盛於一容器8中，使晶圓3為架 設於一承載盤1 0上，使得該承載盤夾持著晶圓3反覆浸 潤於蝕刻液體7中，然而地球因具有地心引力之作用，於 晶圓3取出液面上時部份蝕刻液體將下流於蝕刻加工面之 底部，故使得蝕刻凹槽5於底部易產生過蝕凹陷9現象（ 如第6圖所示）。 整體看來’現存無論是乾式蝕刻或濕式蝕刻，還是浸 潤式#刻加工；各種餘刻技術加工過程中姓刻液體或氣體 反應時’晶圓片皆僅為定點單向之自轉或靜止狀態，無法 取得均勻之蝕刻深度及蝕刻形狀，一但過蝕現象^現晶'圓 製程之不良率便升高，不良率之增加代表無形之製造成本 亦會提高，因此本發明之申請人針對此一問題點，已成 地設計出一種製造方法，其可有效地使得於晶圓片上加1 出精準之形狀及尺寸，使產品之良率大為提昇。 【發明内容】 爰是，本發明之主要目的係在於提供—種晶圓精準蝕The method, especially a technique for making dry money engraving and wet money acting material size controllable, is removed by etching (Etch). In general, the etching processing (wet cleaning) two processing devices are provided with a nozzle to be processed. The wafer 3 is fixed with the gas 4. Due to the gravity, the surface will continue to rotate for the purpose of crystal solid processing. 4 is the main reaction. Plasma for etching Plasma will separate the etching gas into active molecules, and the plasma has a charge. The wafer is then placed and the ions will be attracted by the cathode end to obtain vertical etching. However, its disadvantage is the engraved notch (as shown in Figure 2). 1240323 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a method for making a processed surface of a wafer when etching (including engraving) is performed on the wafer of the wafer to be precisely carved. Those who react more accurately. [Previous technology] According to the traditional semiconductor wafer manufacturing process, it is used to distinguish a certain material from the surface of the wafer into dry type (also called plasma etching) and thirst. Please refer to Figure 1. Generally, dry etching 1 is provided with a rotating device 2 directly below. The rotating device 2 will be placed on the 2 rotating devices, and the particles released by the etching force from the nozzle will be sprayed on the surface of the wafer 3 to be etched. The degree of uniformity, so the position of the circular surface of the rotating device 2. Under dry etching, the etching medium is driven by plasma energy, which has both physical and chemical effects, that is, the pre-decomposition of the material, which can cause rapid erosion of the material, will also ionize these chemical components. To make its negatively charged cathode end all positively charged and hit the wafer surface. Using this technology, this wafer is processed in a fixed-point rotation method. 5 It is prone to over-etching on the outside of the rotating surface. Depression 6 is now ΙΙΙΙΙϋ Page 5 1240323 V. Description of the invention (2) Please refer to Figure 3 for the etching process of wafer 3 and the wet etching process. The same device is equipped with a nozzle i and a rotating device 2. The wafer 3 to be processed is fixed on the two rotating devices, the difference is that the nozzle is sprayed as #etching liquid 7, so that the liquid etches the wafer processing surface, but the disadvantages of the processing are also the dry type described above. Etching has the same disadvantages. Because of the centrifugal force on the outside of the rotating surface, the etching material is likely to accumulate on the outside of the centrifugal force. Therefore, the phenomenon of overetching depression 6 is easy to occur (as shown in Figure 4). See Figures 5 and 6 Shown, and etching more There is a method for the etching process, which is to place the rice carving liquid 7 in a container 8 so that the wafer 3 is erected on a carrier plate 10 so that the carrier plate sandwiches the wafer 3 and is immersed in the etching liquid 7 repeatedly. However, due to the effect of gravity on the earth, when the wafer 3 is taken out of the liquid surface, part of the etching liquid will flow down to the bottom of the etching processing surface, so that the etching groove 5 is liable to produce an overetching depression 9 at the bottom ( (As shown in Figure 6). On the whole, 'existing dry etching or wet etching, or immersion #etching processing; when various liquid crystal or gas reactions occur during the processing of various remaining technologies, the wafers are only fixed-point one-way rotation or stationary state It is impossible to obtain a uniform etch depth and etch shape. Once the over-etching phenomenon occurs, the defect rate of the epitaxial round process will increase. The increase of the defect rate means that the intangible manufacturing cost will also increase. Therefore, the applicant of the present invention addresses this issue. One problem is that a manufacturing method has been designed that can effectively add a precise shape and size to the wafer and greatly improve the yield of the product. [Summary of the Invention] That is, the main purpose of the present invention is to provide a precise etching of wafers.
第6頁 1240323 五、發明說明⑶ 刻之方法， 犄續，，，以降 本發明 $法’蝕刻 %進，具有 為達其 法，係將晶 刻物質，於 日3圓片相對 路徑’且待 忐產生自轉 均勻分佈。 為達以 配合圖式之 【實施方式 請參第 2 0，於構 2於内環壁 2 4：，至少 動輪2 1由 主動輪2 1 輪2 5上， 於較佳 板4 1，蓋 可使晶 低不量 之次要 加工表 降低製 發明目 圓片與 另一相 於噴頭 加工物 之換位 圓於蝕刻 率者。 目的，係 面能均勻 造成本之 的，本案 加工喷頭 對端置設 具有能提 晶圓片公 ’使得蝕 作用後，蝕刻深度及形狀控制 在於提供一種 分佈勉刻液， 優點。 所採之一種晶 對向設置，其 有待加工物晶 供繞行該噴頭 轉運行過程中 刻物質衝激於 晶圓精準蚀刻之 且生產加工速度 圓精準蝕刻之方 喷頭可喷射出蝕 圓片，待加工物 中心呈公轉運行 ’晶圓片本身亦 晶圓片表面使之 上發明目的， 詳細說明，期 ] 7、8囷所示 造上旋轉裝置 設有内環齒2 一齒輪2 5為 鏤孔2 4穿入 與内環齒2 3 其盤之周緣設 之實施方式中 板板體上設有 以下藉由一具體之實施例構造， 達到進一步之瞭解。 ’本發明實施例設計有旋轉裝置 設有一主動齒輪21，一環體2 3 ’於環體之中央部設有一鏤孔 設置於環體2 2之内環壁，使主 ’令至少一個之齒輪2 5嚅合於 之間’承載盤2 6可固定於各齒 有缺口 2 7以方便夾持晶圓片。 了於各齒輪2 5上加設有一蓋 多數之透孔4 2以供齒輪2 5頂Page 6 1240323 V. Description of the invention (3) The method of engraving, continued, in order to reduce the present invention's "etching method", to achieve its method, the engraved material will be on the 3rd wafer relative path "and wait.忐 produces a uniform distribution of rotation. In order to match the figure [for the implementation, please refer to No. 20, in the structure 2 on the inner ring wall 2 4: at least the moving wheel 21 is driven by the driving wheel 2 1 on the wheel 25, on the better plate 41, the cover can be The secondary processing table that reduces the amount of crystal is reduced, and the transposed circle of the invention-formed disc and another phase relative to the processing of the nozzle is rounded to the etching rate. The purpose is that the surface can be caused uniformly, and the processing nozzle is disposed on the opposite end of the case, which can improve the wafer thickness. After etching, the depth and shape of the etching are controlled to provide a distributed etching solution, which has the advantages. A kind of opposite crystal set is adopted, and the crystals to be processed are supplied to orbit the nozzle. During the rotation of the nozzle, the material is irritated to the wafer with precise etching and the production and processing speed is round and precise. The square nozzle can etch wafers. The center of the object to be processed runs in revolutions. The wafer itself is also the surface of the wafer. The purpose of the invention is described in detail. The period is shown in Figures 7 and 8. The rotating device is provided with internal ring teeth 2 and a gear 2 5. In the embodiment in which the perforations 2 4 penetrate and the inner ring teeth 2 3 are provided on the peripheral edge of the disk, the plate body is provided with a specific embodiment to achieve further understanding. 'The embodiment of the present invention is designed with a rotation device provided with a driving gear 21 and a ring body 2 3' A central portion of the ring body is provided with a perforation provided in the inner ring wall of the ring body 2 2 so that the main 'order at least one gear 2 5 fit between the 'carriage plate 2 6 can be fixed to each tooth with a notch 2 7 to facilitate clamping wafers. In addition, a cover is provided on each of the gears 25, and a large number of through holes 4 2 are provided for the tops of the gears 2 5
^40323 五、發明說明⑷ __ ，突出，因而藉由螺絲4 5上。 、’、3以將承載盤26鎖固於齒輪2 如第9圖所示，宗忐 f動輪2丄受馬達轉旋轉裝置2 〇之建構後，當 =承栽盤26將因各齒體22設計為不動件，而 達到齒輪2 5相對;與内環齒2 3屬合之效應， 用，同時各承載盤26 :^1圓中心可為一公轉運行作 1與内環齒23間，作用因齒輪25齒合於主動輪2 功效，對此而言，任何署μ而成為公轉運行時同步為自轉 將產生相對工作原點處具有：：J f! 6上之晶圓片4 〇 如第10、12圖所-,自轉之功效。 設置於一機台5 〇上，診=之旋轉裝置2 0可使其 護罩5 1之上方位置設J 一；：：封閉之護罩5 1，於 出蝕刻物質，於本圖式實施例中供由該噴頭喷射 蝕刻液體3 1 ,如為進行欽弋斜^ ^式蝕刻故所喷出為 。並使喷頭3 0設置於主動& 2 j &所噴出則為蝕刻氣體 工作原點，且將各圓晶片4 f=圓心正上方位置成為 使馬達輸出轴（無視出）帶動主動輪載盤2 6之上部， 互與内環齒…合之齒上旋=使得各相 實施例中於環體2 2内部其齒輪2 5 導：帶動，於本 主動輪2 1之旋轉帶動下，各齒輪2 *罝數量為四個，由 以喷頭3 0為中心點而繞著公轉f ，行星式運轉路徑 齒輪2 5亦將呈-自轉之方式旋動值二夺因組合關係各 由上而下灑佈時，於晶圓片4 〇上 此s蝕刻液體3 1 处之加工平面皆將覆^ 40323 V. Description of the invention ⑷ __ is prominent, so it is screwed on by 4 5. , ', 3 to lock the carrier plate 26 to the gear 2 As shown in FIG. 9, after the construction of the moving wheel 2 and the rotation device 2 0 by the motor, when the carrier plate 26 will be caused by each tooth 22 It is designed as a fixed part, so that the gears are opposed to each other. The effect of combining with the inner ring teeth 23 is used. At the same time, each bearing plate 26: ^ 1 circle center can be operated between one revolution and the inner ring teeth 23. Because the gear 25 is engaged with the driving wheel 2 effect, for this reason, any time μ becomes the revolution when the rotation is synchronized, the rotation will produce the relative working origin. At: J f! 6 Wafer 4 〇 As the first Figures 10 and 12-The effect of rotation. It is set on a machine 5 0, and the rotating device 20 of the doctor can set J 1 on the upper position of the protective cover 5 1 :: The closed protective cover 5 1 is used to produce an etching substance. In the embodiment of the figure, The supply nozzle sprays the etching liquid 3 1 from the nozzle, which is ejected as for the oblique etching. And the nozzle 30 is set at the active & 2 j & the spray is the working origin of the etching gas, and each wafer 4 f = the position directly above the center of the circle becomes the motor output shaft (ignored) to drive the active wheel load The upper part of the disk 2 6 and the inner ring teeth ... the combined teeth are rotated upwards so that the gears 2 5 inside the ring body 2 2 are guided in the phases of each embodiment: driven, driven by the rotation of the driving wheel 21 1 The number of gears 2 * 罝 is four, and the revolution f is centered on the nozzle 30 as the center point. The planetary running path gear 2 5 will also rotate in a -rotation manner. When the cloth is sprayed down, the processing plane of the etching liquid 3 1 on the wafer 40 will be covered.
第8頁 1240323 —---- 五、發明說明（5) 匕極均勻之蝕刻液塗層，達到蚀刻深度可為精准控制之 於第11圖所示中 1之深渡及形狀因蝕：二其顯示晶圓片4 0上加工凹槽4 更佳妥善。 ^液均勾分佈，故蝕刻之精度控制得 再如第13圖所； 少 〇構造示意圖；可知A、二係本發明另一實施例旋轉裝置6 6可為繞著喷頭到各承放晶圓“〇之承載盤2 之旋轉裝置佈設可為；轉且自轉之目的’另外 中心輪6 1可為定點不心輪6 1 ’其 合關係不t，但於環體2 2之外：2 !、齒輪2 5組 動輪2 9設於外環齒2 8外側，心相：：：2 ^，-主 動輪29受馬達旋轉驅動時，其各承：亦 上述行星式公轉且兼具自轉之功效。 dbTTTw成如 綜上所述，本發明對於晶圓片之加工， 度達精確之尺寸，使晶圓之加工效率及良率皆 X = 傳統已知加工技術手段相較之下’更增整體之=性： 適於應用在晶圓片之蝕刻工作，符合專利 f 利，實感德便。 1干依法申％專 1240323 圖式簡單說明 【圖式簡單說明】 第1圖係傳統一乾式蝕刻之加工示意圖。 第2圖係傳統乾式蝕刻加工後成型示意圖。 第3圖係傳統一濕式蝕刻之加工示意圖。 第4圖係傳統濕式蝕刻加工後成型示意圖。 第5圖係傳統一浸蝕蝕刻之加工示意圖。 第6圖係傳統浸蝕蝕刻加工後成型示意圖。 第7圖係本發明一旋轉裝置外觀圖。 第8圖係本發明旋轉裝置構造分解圖。Page 8 1240323 ------ V. Description of the invention (5) Extremely uniform etching solution coating, the depth of the etching can be accurately controlled, as shown in Figure 11 and the shape of the corrosion: 2 It shows that it is better and better to process the groove 4 on the wafer 40. ^ The liquid is evenly distributed, so the accuracy of the etching can be controlled as shown in Figure 13; the structure diagram is small; it can be seen that the rotating device 66 of another embodiment of the present invention can be used to surround the spray head to each receiving crystal. The arrangement of the rotation device of the bearing plate 2 of circle “0” may be; the purpose of rotation and rotation 'in addition, the center wheel 6 1 may be a fixed-point misaligned wheel 6 1', and the combined relationship is not t, but outside the ring body 2 2: 2 !, Gear 2 5 sets of moving wheels 2 9 are set outside the outer ring teeth 2 8. Heart phase ::: 2 ^,-When the driving wheel 29 is driven by the motor, its bearings are: The dbTTTw is as described above. The wafer processing of the present invention achieves precise dimensions, so that the wafer processing efficiency and yield are both X = compared to the conventional known processing technology methods. The overall value: suitable for the etching of wafers, in line with the patent f benefits, real sense of morality. 1 dry according to the law% 1240323 Brief description of the diagram [Schematic description of the diagram] Figure 1 is a traditional dry etching Processing schematic diagram. Figure 2 is a schematic diagram of the traditional dry etching process. Figure 3 is The processing schematic diagram of unified wet etching. Figure 4 is the schematic diagram of the traditional wet etching process. Figure 5 is the schematic diagram of the traditional one etching process. Figure 6 is the schematic diagram of the traditional etching process after the process. Invention 1 Appearance of a rotating device. Fig. 8 is an exploded view of the structure of the rotating device of the present invention.
第9圖係本發明旋轉裝置上視圖。 第1 0圖係本發明進行濕式蝕刻加工示意圖。 第1 1圖係本發明濕式蝕刻加工後成型示意圖。 第1 2圖係本發明蝕刻加工裝置外觀圖。 第1 3圖係本發明另一實施例旋轉裝置示意圖。 【主要元件符號說明】Fig. 9 is a top view of the rotating device of the present invention. FIG. 10 is a schematic diagram of the wet etching process performed by the present invention. FIG. 11 is a schematic diagram of the molding after the wet etching process of the present invention. Fig. 12 is an external view of an etching processing apparatus according to the present invention. FIG. 13 is a schematic diagram of a rotating device according to another embodiment of the present invention. [Description of main component symbols]
1 喷 頭 2, •旋 轉 裝 置 3 晶 圓 4. •姓 刻 氣 體 5 凹 槽 6 . •過 蚀 凹 陷 7 蚀 刻 液 體 8· •容 器 9 .. 過 触 凹 陷 1 0. •承 載 盤 2 0 • · 旋 轉 裝置 2 1 . •主 動 輪 2 2 • · 環 體 2 3 . •内 環 齒 2 4 • · 鏤 孔 2 5 . .齒 輪1 Nozzle 2, • Rotating device 3 Wafer 4. • Surname engraved gas 5 Groove 6. • Etched recess 7 Etching liquid 8 • Container 9: Overlying recess 1 0. • Carrier tray 2 0 • Rotate Device 2 1. • Driving wheel 2 2 • • Ring body 2 3. • Inner ring tooth 2 4 • • Hole 2 5.. Gear
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