CN205152330U - Full -automatic type plasma chemical vapor deposition platform - Google Patents
Full -automatic type plasma chemical vapor deposition platform Download PDFInfo
- Publication number
- CN205152330U CN205152330U CN201520811749.4U CN201520811749U CN205152330U CN 205152330 U CN205152330 U CN 205152330U CN 201520811749 U CN201520811749 U CN 201520811749U CN 205152330 U CN205152330 U CN 205152330U
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- vapor deposition
- full
- chemical vapor
- substrate holder
- plasma chemical
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Abstract
The utility model discloses a full -automatic type plasma chemical vapor deposition platform, including reaction tube, high -frequency coils, casing and vacuum pump, the reaction tube is established on the casing, the reaction tube is quartzy reaction tube, reaction tube and casing seamless connection, high -frequency coils establishes in the reaction tube outside, the vacuum pump is established in the casing bottom, the reaction tube middle part is provided with the breather pipe, the breather pipe bottom is provided with the filter, be provided with base plate and substrate holder in the casing, base plate and substrate holder fixed connection, the substrate holder below is provided with heater and revolving axle, the revolving axle is connected with the substrate holder transmission, and this full -automatic type plasma chemical vapor deposition platform simple structure adds and not to lead to the fact man -hour the rete to pollute, can obtain even rete.
Description
Technical field
The utility model relates to a kind of full-automatic plasma chemical vapor deposition platform.
Background technology
Gas phase deposition technology utilizes the physics, the chemical process that occur in gas phase, forms functional or ornamental metal, nonmetal or compound coat at workpiece surface.Gas phase deposition technology, according to membrane formation mechanism, can be divided into chemical vapour deposition, physical vapor deposition and plasma gas phase deposition.
On substrate, the semiconductor film material preparation of chemical reaction deposit and the preparation method of other materials film is carried out after sediment chamber utilizes glow discharge to make it ionize.Plasma enhanced chemical vapor deposition is: in chemical vapour deposition, energizing gas, makes it produce low-temperature plasma, the chemically reactive of intensified response material, thus carries out a kind of method of extension.[1] the method can form solid film at a lower temperature.Such as in a reaction chamber, body material is placed on negative electrode, pass into reactant gases extremely comparatively subatmospheric (1 ~ 600Pa), matrix keeps certain temperature, produce glow discharge in some way, ionization of gas near matrix surface, reactant gases is activated, and matrix surface produces cathode sputtering simultaneously, thus improves surfactivity.Not only there is common thermal chemical reaction from the teeth outwards, also there is complicated plasma chemical reaction.Deposited film is formed under the acting in conjunction of these two kinds of chemical reactions.Excite the method for glow discharge to mainly contain: radio-frequency drive, high direct voltage excites, pulse excitation and microwave-excitation.
Current existing plasma chemical vapor deposition platform complex structure, installs inconvenient, adds the gas that man-hour, coil method produced and easily causes rete to pollute, the quality of impact processing.
Utility model content
It is simple that the technical problems to be solved in the utility model is to provide a kind of structure, adds and rete can not be caused man-hour to pollute, can obtain the full-automatic plasma chemical vapor deposition platform of uniform rete.
For solving the problem, the utility model adopts following technical scheme:
A kind of full-automatic plasma chemical vapor deposition platform, comprise reaction tubes, radio-frequency coil, housing and vacuum pump, described reaction tubes is located on housing, described reaction tubes is crystal reaction tube, described reaction tubes and housing seamless link, described radio-frequency coil is located at outside reaction tubes, described vacuum pump is located at housing bottom, reaction tubes can carry out workpiece surface or nearly space surface carries out chemical reaction, generate solid film, radio-frequency coil can activated plasma, reactant gases is activated, rotating shaft can drive substrate rotating, keep solid film surface uniform, ventpipe is provided with in the middle part of described reaction tubes, strainer is provided with bottom described ventpipe, substrate and substrate holder is provided with in described housing, described substrate is provided with plasma body, described substrate is fixedly connected with substrate holder, well heater and rotating shaft is provided with below described substrate holder, described rotating shaft and substrate holder are in transmission connection.
As preferably, described well heater is electric heater, keeps heating efficiency high.
As preferably, bottom described rotating shaft, be provided with bearing, facilitate the rotation of rotating shaft.
As preferably, described bearing is fixedly connected with housing, holding structure good stability.
As preferably, described reaction tubes top camber is arranged, can be firm at holding structure.
The beneficial effects of the utility model are: the reaction tubes of setting can carry out workpiece surface or nearly space surface carries out chemical reaction, generate solid film, radio-frequency coil can activated plasma, and reactant gases is activated, rotating shaft can drive substrate rotating, keeps solid film surface uniform.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of full-automatic plasma chemical vapor deposition of the utility model platform.
Embodiment
As shown in Figure 1, a kind of full-automatic plasma chemical vapor deposition platform, comprise reaction tubes 1, radio-frequency coil 2, housing 3 and vacuum pump 4, described reaction tubes 1 is located on housing 3, described reaction tubes 1 is crystal reaction tube, described reaction tubes 1 and housing 3 seamless link, described radio-frequency coil 2 is located at outside reaction tubes 1, described vacuum pump 4 is located at bottom housing 3, ventpipe 5 is provided with in the middle part of described reaction tubes 1, strainer 6 is provided with bottom described ventpipe 5, substrate 7 and substrate holder 8 is provided with in described housing 3, described substrate 7 is provided with plasma body 9, described substrate 7 is fixedly connected with substrate holder 8, well heater 10 and rotating shaft 11 is provided with below described substrate holder 8, described rotating shaft 11 is in transmission connection with substrate holder 8.
Described well heater 10 is electric heater, in use, keeps heating efficiency high.
Be provided with bearing 12 bottom described rotating shaft 11, in use, facilitate the rotation of rotating shaft 11.
Described bearing 12 is fixedly connected with housing 3, in use, and holding structure good stability.
Described reaction tubes 1 top camber is arranged, in use, and can be firm at holding structure.
In use, be placed on by workpiece on substrate 7, rotating shaft 11 drives substrate holder 8 to rotate, and the gas that radio-frequency coil 2 activate plasma 9 makes ventpipe 5 enter reacts, and waste gas is discharged by vacuum pump 4.
The beneficial effects of the utility model are: the reaction tubes of setting can carry out workpiece surface or nearly space surface carries out chemical reaction, generate solid film, radio-frequency coil can activated plasma, and reactant gases is activated, rotating shaft can drive substrate rotating, keeps solid film surface uniform.
The above, be only embodiment of the present utility model, but protection domain of the present utility model is not limited thereto, and any change of expecting without creative work or replacement, all should be encompassed within protection domain of the present utility model.
Claims (5)
1. a full-automatic plasma chemical vapor deposition platform, it is characterized in that: comprise reaction tubes, radio-frequency coil, housing and vacuum pump, described reaction tubes is located on housing, described reaction tubes is crystal reaction tube, described reaction tubes and housing seamless link, described radio-frequency coil is located at outside reaction tubes, described vacuum pump is located at housing bottom, ventpipe is provided with in the middle part of described reaction tubes, strainer is provided with bottom described ventpipe, substrate and substrate holder is provided with in described housing, described substrate is provided with plasma body, described substrate is fixedly connected with substrate holder, well heater and rotating shaft is provided with below described substrate holder, described rotating shaft and substrate holder are in transmission connection.
2. full-automatic plasma chemical vapor deposition platform according to claim 1, is characterized in that: described well heater is electric heater.
3. full-automatic plasma chemical vapor deposition platform according to claim 2, is characterized in that: be provided with bearing bottom described rotating shaft.
4. full-automatic plasma chemical vapor deposition platform according to claim 3, is characterized in that: described bearing is fixedly connected with housing.
5. full-automatic plasma chemical vapor deposition platform according to claim 4, is characterized in that: described reaction tubes top camber is arranged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520811749.4U CN205152330U (en) | 2015-10-20 | 2015-10-20 | Full -automatic type plasma chemical vapor deposition platform |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520811749.4U CN205152330U (en) | 2015-10-20 | 2015-10-20 | Full -automatic type plasma chemical vapor deposition platform |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205152330U true CN205152330U (en) | 2016-04-13 |
Family
ID=55688045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520811749.4U Expired - Fee Related CN205152330U (en) | 2015-10-20 | 2015-10-20 | Full -automatic type plasma chemical vapor deposition platform |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205152330U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110894596A (en) * | 2018-09-13 | 2020-03-20 | 长鑫存储技术有限公司 | Film preparation equipment and reaction cavity thereof |
| CN113265644A (en) * | 2021-04-04 | 2021-08-17 | 上海尚享信息科技有限公司 | Chemical vapor deposition equipment based on sensitive element manufacturing |
-
2015
- 2015-10-20 CN CN201520811749.4U patent/CN205152330U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110894596A (en) * | 2018-09-13 | 2020-03-20 | 长鑫存储技术有限公司 | Film preparation equipment and reaction cavity thereof |
| CN113265644A (en) * | 2021-04-04 | 2021-08-17 | 上海尚享信息科技有限公司 | Chemical vapor deposition equipment based on sensitive element manufacturing |
| CN113265644B (en) * | 2021-04-04 | 2022-12-06 | 江苏煌灿新材料科技有限公司 | Chemical vapor deposition equipment based on sensitive element manufacturing |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160413 Termination date: 20181020 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |