TWI231621B - Electrical connector and method for making - Google Patents
Electrical connector and method for making Download PDFInfo
- Publication number
- TWI231621B TWI231621B TW093110155A TW93110155A TWI231621B TW I231621 B TWI231621 B TW I231621B TW 093110155 A TW093110155 A TW 093110155A TW 93110155 A TW93110155 A TW 93110155A TW I231621 B TWI231621 B TW I231621B
- Authority
- TW
- Taiwan
- Prior art keywords
- contact
- sheet
- connector
- electrical
- spring
- Prior art date
Links
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4092—Integral conductive tabs, i.e. conductive parts partly detached from the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
- H01R12/50—Fixed connections
- H01R12/51—Fixed connections for rigid printed circuits or like structures
- H01R12/52—Fixed connections for rigid printed circuits or like structures connecting to other rigid printed circuits or like structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
- H01R12/70—Coupling devices
- H01R12/71—Coupling devices for rigid printing circuits or like structures
- H01R12/712—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit
- H01R12/714—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit with contacts abutting directly the printed circuit; Button contacts therefore provided on the printed circuit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/03—Contact members characterised by the material, e.g. plating, or coating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/22—Contacts for co-operating by abutting
- H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
- H01R13/2407—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/22—Contacts for co-operating by abutting
- H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
- H01R13/2464—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the contact point
- H01R13/2492—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the contact point multiple contact points
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/02—Arrangements of circuit components or wiring on supporting structure
- H05K7/10—Plug-in assemblages of components, e.g. IC sockets
- H05K7/1053—Plug-in assemblages of components, e.g. IC sockets having interior leads
- H05K7/1061—Plug-in assemblages of components, e.g. IC sockets having interior leads co-operating by abutting
- H05K7/1069—Plug-in assemblages of components, e.g. IC sockets having interior leads co-operating by abutting with spring contact pieces
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
- G01R1/0416—Connectors, terminals
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/32—Holders for supporting the complete device in operation, i.e. detachable fixtures
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01005—Boron [B]
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- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
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- H01L2924/01019—Potassium [K]
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- H01L2924/01029—Copper [Cu]
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- H01L2924/01033—Arsenic [As]
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- H01L2924/01074—Tungsten [W]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01078—Platinum [Pt]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H01L2924/19042—Component type being an inductor
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- H01L2924/19043—Component type being a resistor
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- H01L2924/3011—Impedance
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- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
- H01R43/007—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for elastomeric connecting elements
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- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
- H01R43/20—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for assembling or disassembling contact members with insulating base, case or sleeve
- H01R43/205—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for assembling or disassembling contact members with insulating base, case or sleeve with a panel or printed circuit board
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/325—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor
- H05K3/326—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor the printed circuit having integral resilient or deformable parts, e.g. tabs or parts of flexible circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Connecting Device With Holders (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Description
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五、發明說明(1) 發明範圍 本發明關於電連接器,特別關於可再連接及再 電連接器,及其製造方法。 文衣义 背景 電連接或連接器用以連接二或多自f組件於 J接電組件至一電裝置,如電腦,路由器,或測試 或 一電組件"之意義為包括但不限於印刷電路板,連接器 ϋ:板連接器。例如’—電互聯用以連接-電组; 積體電路(一 IC或一晶片)’至—印刷電路板。互 亦可用在積體電路製造期間,連接一 電互聯 系統。在某些應用中,電互聯或哭^ 一測試 再安裝之連接,俾與其相連之分離或可 例如’如能利用可分離互聯裝置安連接。 升級之晶片。 失放、、且件可被移除,或設立 亦有在應用中使用電連接盥 直接電連接。此一電連接哭/么;,夕曰曰圓上之金屬墊作 用於製造程序之晶圓測試中 卡’典型 測試器上’提供自測試器至心m型裝在- 之一致性。了被測试其功能性,及與特殊參數限制 傳統電連接$福+ 插入絕緣載體中以 丨堊金屬彈簧,其製成後再個別 之其他方法包括利用6 J接元件之陣列。構成電連接器 用各向同性導電結合,注入模製導電結V. Description of the Invention (1) Scope of the Invention The present invention relates to electrical connectors, and in particular, to reconnectable and re-electrical connectors, and a method for manufacturing the same. The meaning of the context is the electrical connection or connector used to connect two or more self-connected components to the J-connected component to an electrical device, such as a computer, router, or test or an electrical component. The meaning of "quote" includes but is not limited to printed circuit boards , Connector ϋ: board connector. For example, '-electrical interconnections are used to connect-electrical groups; integrated circuits (an IC or a chip)' to-printed circuit boards. Interconnections can also be used to connect an electrical interconnection system during the manufacture of integrated circuits. In some applications, the electrical connection may be tested or reinstalled, and the connection may be separated or may be connected, for example, if a detachable interconnection device can be used. Upgraded chip. Displacement, and the parts can be removed, or set up. There are also electrical connections for direct electrical connections in applications. This electrical connection is crying. The metal pad on the circle is used for wafer testing in the manufacturing process. The card ‘Typical Tester’ provides consistency from the tester to the heart-type mounting. It has been tested for its functionality, and limited with special parameters. The traditional electrical connection $ 福 + is inserted into an insulating carrier to chalk metal springs. Other methods after its manufacture include the use of an array of 6 J-connected components. Form an electrical connector. Use isotropic conductive bonding to inject a molded conductive junction.
第8頁 1231621 五、發明說明(2) ::成束線導電元件,接線技術構成之彈簧及小固態薄 以作係指—陣列金屬墊(亦稱陸地),係用 作::體電路封包,印刷電路板或其他電 雷用 :金屬墊通常由薄膜沉積技術形成,並 :,面。球格陣列⑽)係指一陣列焊球或和曰焊Τ,供 ΐ導:電之電接點。lga與bga封包被廣泛用於 =可移除及再安裝之插座能力,以Page 8 1231621 V. Description of the invention (2) :: bunched wire conductive elements, springs made of wiring technology and small solid-state thin films are referred to as array metal pads (also known as land), which are used as: body circuit packages For printed circuit boards or other electrical mines: Metal pads are usually formed by thin film deposition technology, and are: Ball grid array (i) refers to an array of solder balls or solder joints, for guidance: electrical contacts. lga and bga packets are widely used for = removable and reinstallable socket capabilities to
或晶片模組。 J匕硬镬至PC 增加之m進展已導致封包形狀之緊縮及 =或節距)已降低,而總連接數則增加。亦:如引, ^包係以Irnn或小於_或更多之連接。此外, ^ 汁趨向一更高頻率操作。例如 、 口又 之1C梦署·^二 冑通信及網路應用使用 摔作頻車及輸出信號為超過1GHZ。電子裝置之 ΪΪΪί等=寸,…封包之引線數目使用在測試 a逑接此4裝置之互聯系統一緊密需求。 寸需Π 展已導致半導體積體電路中緊縮之尺 ::例:模或一半導體封包上之接點之節距之 ^ - 半導體晶圓上之接墊可有一 250微米或更小 ★。當半導體裝置上=== 、楗永時,及一連接同時連接至多個於一陣列中之接墊 1231621 -—~^ 五、發明說明(3) 時,此一問題變為更困難。 械,及可靠性性能需求要曰辦聯系統之電,機 術無法達到用於高速度:m時為然。傳統互聯技 電及:靠性之Ic裝置之性丄二::及大弓丨線數目之機械, 今日互聯系統所遭遇 之變化,及連接之電組杜由t問碭為共面性(垂直偏移) 化導致接觸元件較侦_ &位置無法對齊。共面性變 以下三因素之受到更大壓力。此-區別來自 性變化(3)封包鱼板,匕中共面性之變化(2)板之共面 )玎興板之任何傾斜。 在傳統LGA封包中,私—袖 變成非平面。當垂直線)由於基板之環繞 某些墊無法與其他連接哭t 過LGA連接器之容差時’ 之共面性變化使其無法鱼 =C。LGA組件之墊 質電連接。 ,、所有電組件之引線作可靠之高品 此外’引線之位置由於製 之偏移,導致位置無法.一 起預疋理想位置 之電子組件引線之水平/ 一有效互聯必須能容納連接 =線尺寸本身之位置變化,由於共的=線 會增加。 二 §封包尺寸降低時 平面性問題不限於j Γ . . ^ “CB},因以封包即連接:广二存在於印刷電路板 LGA^ ^ 統PCB之平度變化在每了此存在有平面性問題。傳 母吋75_125微米或更多。LGA連接器必Or chip modules. The progress of m from the dagger to the increase of the PC has resulted in a reduction in the shape of the packet and a reduction in pitch, and the total number of connections has increased. Also: As cited, ^ packets are connected by Irnn or less than _ or more. In addition, juices tend to operate at a higher frequency. For example, the mouth of the 1C dream department ^ two 胄 communication and network applications use fall frequency and output signal is more than 1GHZ. The number of leads of an electronic device is equal to the inch size, the number of leads of the package is used for testing a tight connection with the interconnection system of these 4 devices. Inch requirements have led to a shrinking scale in semiconductor integrated circuits :: Example: The pitch of the contacts on a mold or a semiconductor package ^-The pads on a semiconductor wafer may have a diameter of 250 microns or less ★. This problem becomes more difficult when the semiconductor device is ===, when it is permanently connected, and a connection is connected to a plurality of pads in an array at the same time. 1231621 ----- ^ 5. Description of the invention (3). The mechanical and reliability performance needs to be connected to the power of the system. The technology cannot be used for high speeds: m is the case. The traditional interconnection technology and the nature of the Ic device relying on the nature of the two :: and the big bow, the number of lines of machinery, the changes encountered in today's interconnection system, and the connection of the electrical group is from co-planarity (vertical) Offset) causes contact elements to be misaligned. Coplanarity changes The following three factors are under greater pressure. This-difference comes from sexual changes (3) packet fish plate, coplanarity change in the dagger (2) coplanarity of the board) any tilt of the board. In traditional LGA packets, the sleeves become non-planar. When the vertical line) some pads cannot be connected with others due to the surrounding of the substrate, the coplanarity change of the LGA connector makes it impossible to fish = C. LGA component pads are electrically connected. , All electrical component leads are reliable and high-quality. In addition, the position of the lead is not possible due to the deviation of the system. The level of the lead of the electronic component at the ideal position must be predicted together. An effective interconnection must be able to accommodate the connection = the line size itself. The position changes due to the increase of the common = line. 2. § The flatness problem is not limited to j Γ when the package size is reduced. ^ "CB}, because the package is connected: Guang Er exists in the printed circuit board LGA ^ ^ The flatness of the PCB has flatness. Question. Mother-in-inch 75_125 microns or more. LGA connector must
第10頁 五、發明說明(4) 須能容納連接之組件,一 變化。此意代表接觸_ ,匕及—PCB間之共面性之全部 能,此時,封包_之;;mm狀態0下發揮功 有可伸縮之電接觸元件,且偏斜最接近。因此,較佳 常變化及位置失調可以容。平,動作可使接點之共面性正 LGA連接器可用以有效^連 =器與待連接之組件間之介面 二止“之電或Λ殊灰//進入⑽ :接器退化,因而造成斷mm接及1與有^可電使連⑽ 當與接觸塾電連接時, 時,當接觸元件接觸塾時,^或LGA上之金屬墊 以便有衝破任何氧=有===貫穿動作, 板上之金屬塾。參者圖1,、$ 觸連接基 與基,上之金屬_作電連 存::下元件 薄膜在_上形成。當接觸』二 102必須貫穿薄膜108以便與^接觸兀件 元讚與她接觸•,薄膜:之;;=觸當= 磨擦接觸或貫穿動作實施。 由接觸凡件102 提供磨擦接觸或f Φ1 ^& '貝穿動作十分必要,良好之磨擦接觸 1231621 五、發明說明(5) 或貫穿動作甚為重要,因貫穿動作夠強足以穿過表面薄膜 1 08,但亦夠軟以避免在電連接時損害金屬墊。此外,任 何磨擦接觸動作必須提供足夠之磨擦距離,俾足夠之金屬 表面曝露以供滿意之電連接甚為重要。 同理,當與焊球成接觸時,必須提供足夠之貫穿或磨 擦動作以克服焊球上之原有氧化物層。但,當使用傳統方 法與焊球作電接觸時,焊球可能被損壞或自封包脫離。圖 2a說明現有接觸元件丨〇2用以接觸基板2〇2上形成之焊球 200。當接觸兀件1〇2與焊球2〇〇接觸以供測試時, 力^貫穿動作,此一動作在焊球2 00之頂表面(亦 稱基本表面)形成一坑洞2 〇 4。 之乂IT】隨後連接至另一半導體裝置時,焊球_中 H洞204可導致在焊球之介面形成空、洞Page 10 V. Description of the invention (4) It must be able to accommodate the connected components. This meaning represents the full power of the contact plane, the coplanarity between the PCB and the PCB. At this time, the packet _ ;; mm function at 0 is a retractable electrical contact element, and the deflection is the closest. Therefore, it is better to allow constant change and position misalignment. Flat, action can make the coplanarity of the contacts positive LGA connector can be used effectively ^ connection = the interface between the connector and the component to be connected only two "electricity or Λ special gray // enter ⑽: the connector is degraded, resulting in Breaking the mm connection and 1 and ^ can be electrically connected. When electrically connected to the contact, when the contact element contacts 塾, ^ or the metal pad on the LGA so that any oxygen can be broken. = Yes === Through action, Metal 塾 on the board. Please refer to Figure 1, and $ to connect the base and the base. The upper metal _ is used for electrical storage :: the lower element film is formed on the _. When contacting the two 102 must penetrate the film 108 in order to contact the ^ Wu Zan Yuan Zan contacted her, thin film: ;; = 当当 = frictional contact or through motion. The frictional contact or f Φ1 provided by the contact element 102 is necessary, good frictional contact 1231621 V. Description of the invention (5) The penetration action is very important, because the penetration action is strong enough to penetrate the surface film 108, but soft enough to avoid damaging the metal pad during electrical connection. In addition, any frictional contact action must be provided Sufficient friction distance, enough metal surface is exposed for The intended electrical connection is very important. Similarly, when in contact with the solder ball, sufficient penetration or friction must be provided to overcome the original oxide layer on the solder ball. However, when traditional methods are used for electrical contact with the solder ball, When in contact, the solder ball may be damaged or detached from the package. Figure 2a illustrates that the existing contact element 〇2 is used to contact the solder ball 200 formed on the substrate 200. When the contact element 102 is in contact with the solder ball 200 For testing, the force ^ penetrates through the action, this action forms a hole 2 0 4 on the top surface (also known as the basic surface) of the solder ball 200. [IT] When the subsequent connection to another semiconductor device, the solder ball _Middle H hole 204 can cause voids and holes to form in the interface of the solder ball
) ° ^ ^ ^(V 2C)力干球2 00連接在金屬墊210上。但,因A惶絲9nn ^ 表面之坑洞m,因而形成一為烊表2 0 0之頂 〇 1 , . 二’同2 1 4於焊球介面,空、;同 214之出現可影響連接之電 ^ 二,门 之退化。 及重要的是連接可靠性 傳統互聯裝置如衝壓金屬 電結合在尺寸燕小時,已甚 :*束線,注如模製導 有正長位置變化之電組件。,^ 使彼專不適於容納具 為真,此時電路徑長度亦降為一,間之空間小於一毫米時 小,及合乎高頻性能需求。在氅米以下,以使電感最 術變為嚴格而無彈性,在杯λ丄尺寸規格下,現有互聯技 插入力約為每一接觸30-40克 1231621) ° ^ ^ ^ (V 2C) force dry ball 2 00 is connected to the metal pad 210. However, due to the pits m on the surface of 9 惶 ^ on the surface of A, it is formed as the top of the table 2000, which is the same as 2 1 4 in the solder ball interface. The appearance of 、 and 214 can affect the connection. The electricity ^ Second, the degradation of the door. And important is the connection reliability. Traditional interconnecting devices such as stamped metal are electrically combined at the size of the swallow hours, which are already: * beam lines, such as molding guides, electrical components with positive length position changes. ^ Makes it unsuitable for the container to be true. At this time, the length of the electrical path is reduced to one, the space between them is smaller than one millimeter, and it meets the high-frequency performance requirements. Below 氅 m, in order to make the inductor the most strict and inelastic, the current interconnection technology under the cup λ 丄 size specification, the insertion force is about 30-40 grams per contact 1231621
時,無 因 控制之 而言。 之模擦 一電接 不致損 較 正常位 提供電 操作之 發明概 冼容納 此,最 磨擦接 亦甚理 距離。 觸元件 害其焊 佳能提 置容差 互聯系 電子裝 要 系統共 理想能 觸動作 想的是 此外, 其能提 球之接 供一電 ,如共 統,其 置使用 w王《 提供電 ’特別 磨擦接 當與焊 供控制 觸表面 互聯系 面變化 月匕適於 變化及位置對齊不良。 接觸元件,其能提供金屬塾上 是對具有小於5 0微米節距之墊 觸動作能提供接觸墊高至5 〇 0/〇 球完成電接觸時,最理邦是有 之磨擦接觸動作於焊球上,而 〇 統,其能容納連接之電組件之 及位置未對齊。此外,較佳能 與小型’高引線密度以高頻$ 本發明揭示一電連接器 接器之方法。 另一方面,揭示一製造電連 〜本發明之更詳細瞭解可自以下之較佳實施說明而獲 件’以舉例方式及配合圖式而瞭解。 較佳實施例之詳細說明 圖3a及3b為根據本發明構造之束球格陣列(bbga)系 之剖面圖。圖3a中之第一結構3 0 0中,焊球3〇2提供一方法 以建立裝置,封包,或模組3〇4及一載體3〇6間之電接觸\ 焊球3 0 2顯示配置在經由印刷電路技術製造之載體3〇6 通路3 0 8中。焊球3 0 2因其懸垂於層312 一部分之彈性接觸" 臂310而有彈性。接觸臂310支撐焊球3〇2如圖化所示,並 提供如彈篑之支撙,如圖3c及3d所示。When it comes to control without cause. The mold wipes an electrical connection and does not cause damage compared to normal position. The invention that provides electrical operation does not accommodate this, and the most frictional connections also have a reasonable distance. The contact element damages its welding. Canon provides tolerances and interconnects with each other. The electronic device requires the system to be ideal. In addition, it can be connected to the ball for an electric power. When the frictional contact is in contact with the welding control surface, the surface change is suitable for changes and poor position alignment. Contact element, which can provide contact action on metal pads with a pitch of less than 50 microns, can provide contact pads as high as 5000 / 〇 ball to complete electrical contact, the most rational is the friction contact action on the solder On the ball, and the system, it can accommodate the connected electrical components and their positions are not aligned. In addition, it is preferred to be able to work with a small 'high lead density at high frequencies. The present invention discloses a method of an electrical connector. On the other hand, revealing a manufacturing electrical connection ~ A more detailed understanding of the present invention can be obtained from the following description of preferred implementations' by way of example and in conjunction with the drawings. Detailed Description of the Preferred Embodiments Figures 3a and 3b are cross-sectional views of a bbga system constructed in accordance with the present invention. In the first structure 300 in FIG. 3a, the solder ball 300 provides a method to establish an electrical contact between the device, the package, or the module 300 and a carrier 300. The solder ball 302 displays the configuration In the carrier 306 via the printed circuit technology 308. The solder ball 3 0 2 is elastic due to its elastic contact " arm 310, which hangs over a portion of the layer 312. The contact arm 310 supports the solder ball 302 as shown in the figure, and provides a support such as a bomb, as shown in Figs. 3c and 3d.
第13頁 1231621Page 13 1231621
接觸H臂310陣列建造於層312中’可自圖3f清晰可見。 牙01〇之不同圖案分別由圖3g中之31〇a及31〇b說明。 PCB31圖6扑中,構造以電接觸元件318方式將結構3〇〇連接於 一之墊3 1 4上而繼縯,該元件包括束陸格陣列(b l g a ) L件 ,一銷格陣列(pgA),或下述之其型之接 觸兀件。 、圖3c中,載體3 0 6 與PCB316由焊球320 與墊314接觸而 成電接觸。圖3d中,載體3 0 6與墊3 14以接觸臂318成電接 觸。接觸臂3 1 0可沖壓或以理想形狀蝕刻而成。如以下詳 述’彼等於是在與PCB相似之構造方法中組裝。 ,圖4a根本發明構造之BLG A電接觸元件400之表面安裝 聖之j面圖。BLGA系統包括一載體4〇2,其具有臂陣列4〇4 構成彈簧載體4〇2平面以外之彈性元件。臂4〇4之角度,厚 度及^量可以改變以提供特別設計特性,如接觸力,電流 載負能力及接觸阻力。載體4〇2顯示與pCB以接觸墊41〇之 焊球408成電接觸。臂404之形裝圖仏之臂31〇a —d相似。 圖4b為根據本發明構造之可分離型儿以接觸元件4〇〇& 之剖面圖,其包括載体4〇2,其以儿以接觸電刷412與墊 410接觸,電刷與載體402之中接觸臂4〇4相似。 、 一圖5為本發明之連接器5 0 0之剖面圖,包括所示之接觸 兀件5 0 2之部分大小之範例尺寸。相對彈簧部分5 〇 4遠端間 間隙為5密耳。自基板表面至彈簧部分頂部之接觸元件5〇2 之高度為10密耳。通過基板之寬度可為1〇密耳範圍。接觸 元件5 0 2之寬度自基座部分外邊緣至另一基座之邊緣為16The array of contact H-arms 310 is built in layer 312 'can be clearly seen from Figure 3f. The different patterns of teeth 01 are illustrated by 31a and 31b in Fig. 3g, respectively. In PCB 31, as shown in FIG. 6, the structure connects the structure 300 to a pad 3 1 4 in the manner of an electrical contact element 318. The element includes a blga L array and a pin grid array (pgA). ), Or one of the following types of contact elements. In Fig. 3c, the carrier 3 0 6 and the PCB 316 are in electrical contact by the contact between the solder ball 320 and the pad 314. In Figure 3d, the carrier 3 0 6 and pad 3 14 are in electrical contact with the contact arm 318. The contact arm 3 1 0 can be stamped or etched in a desired shape. As detailed below, they are assembled in a similar construction method to PCB. FIG. 4a is a plan view of the surface mounting surface of the BLG A electrical contact element 400 constructed according to the basic invention. The BLGA system includes a carrier 402, which has an array of arms 400 that form an elastic element outside the plane of the spring carrier 402. The angle, thickness, and thickness of the arm 404 can be changed to provide special design characteristics such as contact force, current carrying capacity, and contact resistance. Carrier 402 is shown in electrical contact with pCB with solder balls 408 of contact pad 41o. The shape of the arm 404 is similar to that of the arm 301a-d. Figure 4b is a cross-sectional view of a separable contact element 400 & constructed according to the present invention, which includes a carrier 40, which contacts the pad 410 with a contact brush 412, and the brush and the carrier 402. The middle contact arm 404 is similar. Fig. 5 is a cross-sectional view of the connector 500 of the present invention, including an example size of a portion of the contact element 502 shown. The clearance between the distal ends of the 504 opposite spring portions was 5 mils. The height of the contact element 502 from the surface of the substrate to the top of the spring portion is 10 mils. The width of the through substrate can be in the range of 10 mils. The width of the contact element 5 0 2 from the outer edge of the base part to the edge of the other base is 16
12316211231621
毯耳。此種接點可跟據本發明之方法 形成節距在50密耳以下及範圍在2〇密耳下所述,可 應注意此等尺寸僅為本發明能達成之之連接器。 士可自本發明瞭解,較大或較小尺寸::觸精:此技術人 成。 〈接觸兀件可以形 很艨本發明一實施例,以下之機 組接觸元件_彳#,U# 4槭特性接觸元件或一 Μ二獲達成某—理想作業特性H I -觸疋件之接觸力可以選擇,以保證-連接’或為連接器之低全面接觸力。觸:件之低阻力 之彈性工柞梦闽_^ 7其次,每一接觸元件 度可以蜱芥& 17以k化。第三,每一接觸元件之垂直高 J了以變化1四,接觸元件之節距或水平尺寸可以γ 設計m,、顯示腿系統及blga系統之複數個接觸臂 έ士構及斤述,此等接觸臂可由衝壓,蝕刻進入彈箬型 …構i及可形成前或形成後作熱處理。 ”么 _之示本發明一實施例之連接器 電基板m之第? m'组接觸元件702 ’位於介 704之第二Φ束主面上,及弟二組接觸元件706位於基板 板704中π &面上。每一對接觸元件702,70 6較佳與基 ί 一 Λ·\气之洞708對齊。金屬執跡通過洞川形成以自 …連接接觸元件,…二主表面連接至一接觸 器圖。7 : I在::連J : 2過程十之中間步驟之連接 接觸兀件之一陣列顯示一起連接在金屬或Blanket ears. Such contacts can be formed with a pitch of less than 50 mils and a range of less than 20 mils according to the method of the present invention. It should be noted that these dimensions are only connectors that can be achieved by the present invention. It can be understood from the present invention that the larger or smaller size :: fine contact: this technique is artificial. <The contact element can be shaped according to an embodiment of the present invention. The following unit contact elements _ 彳 #, U # 4 maple characteristic contact elements or one M2 achieve a certain—ideal operating characteristics HI—contact force of the contact element can be Choose to ensure 'connect' or low overall contact force for the connector. Touch: Low-resistance, flexible work piece Mengmin_ ^ 7 Second, each contact element can be ticked & 17 to k. Third, the vertical height of each contact element can be changed by one to four. The pitch or horizontal size of the contact element can be designed by m, the display leg system and the blga system's multiple contact arm structure and description. The contact arm can be punched, etched into the spring type ... structure i, and can be heat treated before or after formation. ”__ shows the first of the electrical substrate m of the connector according to an embodiment of the present invention? The m 'group of contact elements 702' is located on the second Φ bundle main surface of the substrate 704, and the second group of contact elements 706 is located in the substrate plate 704. π & surface. Each pair of contact elements 702, 70 6 is preferably aligned with a base hole 708. A metal track is formed through the hole to connect the contact elements with ..., the two main surfaces are connected to one Contactor Figure. 7: I in :: Connect J: 2 One of the middle steps of the process ten is connected with one of the contact element arrays shown together connected in metal or
1231621 五、發明說明(9) 金屬材制> t; u * 加以圖案2、: ίϊ後之製造步驟中,接觸元件間之薄片 隔離(單獨^ 不需要部分’俾接觸元件按需要 或全部接觸元件例如,薄片可予加遮罩或蝕刻以隔離某些 有包本發明之連接器形成如下。首先’備 可為、s %表^底表面間之傳導路徑介電基板。傳導路徑 -片^何^ f或孔隙708。在一實施例中’介電基板7〇4為 層薄片之具有貫穿洞之介電材料。一傳導薄片或多 以=化接:形成包括:基座部分或多彈性部分t 其他方式形成黧几件包括彈性部分可由蝕亥卜衝壓,或 當包括第二且接:片在介電基板704之第-主表面。 樣予以牛時,第二傳導材料片或多層薄片同 所需各自被隔離f iH # u 屬俾接觸兀•件按 式圖案化 )m以㈣’衝壓或其他方 已圖if一實施例巾,彈性部分之突出部分可在薄片包括 =圖案化之接觸元件連至介 ^括 片之不要部分可在成前消除。此外,薄 此外,所示之實二二電Λ = 洞开J二:ΐ 表面以環形圖案71 〇包圍每-貫穿 ,成。而傳導環71 〇可予提供以 母貫穿 W成之傳導執跡間之電連接,傳導環7ι〇並 第16頁 12316211231621 V. Description of the invention (9) Made of metal material> u * Adding the pattern 2: In the manufacturing steps after 制造, the sheets of the contact elements are isolated (individually ^ do not need part of the contact elements as needed or all contact) For example, the sheet may be masked or etched to isolate some of the connectors with the present invention formed as follows. First, the substrate may be a conductive path dielectric substrate between the bottom surface and the conductive path. The conductive path is a sheet ^ Ho ^ f or pores 708. In one embodiment, the 'dielectric substrate 704' is a thin layer of dielectric material with through holes. A conductive sheet or more is connected to: forming includes: a base part or more elastic Part t is formed in other ways. Several pieces including the elastic part can be stamped by etching, or when including a second and connected: sheet on the first-major surface of the dielectric substrate 704. As such, the second conductive material sheet or multilayer sheet They are isolated from each other as needed. F iH # u is a contact pattern. (Patterns are patterned according to the type.) M is stamped or other figures have been shown in this example. The protruding part of the elastic part can be included in the sheet = patterned. Contact element connected to the bracket Do not part can be eliminated before completion. In addition, thin In addition, as shown in the real two two electric Λ = hole opening J two: ΐ The surface is surrounded by a circular pattern 71 〇 per-through. And the conductive ring 71 〇 can provide electrical connection between the conductive track formed by the mother penetrating W, the conductive ring 7ι〇 and page 16 1231621
-1 « 丨丨 I 五、發明說明(10) 二件。在一實施例中,連接器可利 -包…元件 觸元件後,全部結構可予;;以來案後以形成各接 跡,通過洞連接接觸元件至介又電洞中之傳導軌 圄8呤明勺k m 基板之另一側之各終端。 圖8 5允月包括利用本發明另一實施例之 之接觸元件之連接器8〇〇。參考圖8 上:, 層結構以形成第一組接觸元件8〇2 器80 0 i括一夕 在肤眚竑钿丨Φ墙按觸兀件802及第二組接觸元件804。 在此貫把例中n接觸元件8〇2係利用第 成,第二組接觸元件8〇4係利用 "^ 2綱及第二金屬層8。8被介電層81 屬。每二 圖it ’ #一組接觸元件在特定金屬層上之理想 位置开4。例如’接觸元件8〇2在金屬層8〇6中之預定位置 2ί位=元件804在金屬層808中在接觸元件8°2未佔 =位置形成。不同金屬層可包括不同厚度或不同合金之 金屬層,俾接觸元件之作業特性可特別配合。因此 同金屬層中形成選擇之接觸元件或選擇之接觸元件组,連 接器800之接觸兀件可使展現不同電及機械特性。 在一實施例中,連接器8〇〇可利用下方法形成。 金屬層80 6加以處理以形成第一組接觸元件8〇2。金 806於是連接至介電基板812上。隨後,一絕緣層,如^ 層wo位於第-一金屬層80 6之上。第二金屬層8〇8加以電 以形成接觸元件及連接至介電層81〇。通路洞及傳 在介電基板812中形成,及需要時在介電層81〇中形成,= 第17頁 1231621 五、發明說明(11) 接觸元件間之傳導路徑至基板812上之相反側上 之各終端。 1j工 圖9&及913為本發明一實施例之連接器之剖面圖。 a並9b說明連接器9〇〇連接至半導體裝置91〇,該裝置【 = 914上形成作為接點之金屬墊912。半導體裝置川 =為^晶圓’金屬墊912為在晶圓上形成之金屬接合 亦可為一⑽封包,金屬塾912代表”陸 地或在LGA封包上形成之金屬連接墊。圖“及⑽中之 ^00 =合至半導體裝置91〇僅供說明,無意限制連接器 θοο僅能應用於連接晶圓或LGA封包。圖“及⑽說明連 9 Μ反轉,與^導體裝置910連接。本發明中使用之方向用詞 如Π上/方Π ,”頂表面Π等意在說明連接器之元件之相關位置 之關係’死如連接器係接觸元件向上面對配置。 一參可圖9a,連接器900包括位於基板9〇4上之一陣列接 觸=件902。因為連接器9〇〇之建造係以半導體尺度以連接 至半導體裝置,連接器9〇〇通常利用半導體製造方法所用 f材^所製造。在一實施例中,基板9 0 4由石英,矽或陶 晶圓製成,接觸元件9〇2位於介電層上,其可為在基板9〇4 ^表,上形成之矽石上自旋(SOS),玻璃上自旋(SOG),硼 磷五%氧矽烷(BpTE0S),或五環氧矽烷(TE0S)層。接觸元 件9 0 2陣列典型以二維陣列形成以匹配半導體裝置910上待 連接之對應接觸點。在一實施例中,連接器9 0 0之形成以 接觸具有50微米或更小節距之接觸金屬墊。每一接觸元件 90 2包括基座部分9 0 6連接至基板90 4之頂表面,及一曲線-1 «丨 丨 I V. Description of Invention (10) Two pieces. In one embodiment, the connector can cover all components after the element touches the component; the structure can be formed after the case; after that, each contact is formed, and the contact element is connected to the transmission rail in the dielectric hole through a hole Ming spoon km Terminals on the other side of the substrate. Fig. 85 Yun Yue includes a connector 800 using a contact element according to another embodiment of the present invention. Referring to FIG. 8, a layer structure is formed to form a first group of contact elements 802, 802, and 800. The contact element 802 and the second group of contact elements 804 are pressed on the skin wall. In this example, the n-contact element 802 is used as a component, and the second group of contact elements 804 is used as a component and the second metal layer 8.8 is made of a dielectric layer 81. Every two pictures it ’# A group of contact elements are opened at the desired position on a specific metal layer. For example, 'the contact element 802 is formed at a predetermined position in the metal layer 806. The bit 804 is formed in the metal layer 808 at the position where the contact element 8 ° 2 is not occupied. Different metal layers can include metal layers of different thicknesses or different alloys, and the operating characteristics of the concrete contact elements can be specially matched. Therefore, by forming a selected contact element or a selected contact element group in the same metal layer, the contact elements of the connector 800 can exhibit different electrical and mechanical characteristics. In one embodiment, the connector 800 can be formed by the following method. The metal layer 806 is processed to form a first group of contact elements 802. Gold 806 is then connected to the dielectric substrate 812. Subsequently, an insulating layer, such as a layer wo, is located on the first metal layer 80 6. The second metal layer 808 is electrified to form a contact element and is connected to the dielectric layer 810. Via holes and vias are formed in the dielectric substrate 812 and, if necessary, in the dielectric layer 810, = page 17 1231621 V. Description of the invention (11) The conductive path between the contact elements is on the opposite side of the substrate 812 Of each terminal. 1j process Figures 9 & and 913 are cross-sectional views of a connector according to an embodiment of the present invention. a and 9b show that the connector 900 is connected to the semiconductor device 91, and a metal pad 912 as a contact is formed on the device. Semiconductor device == wafer '. Metal pad 912 is a metal bond formed on a wafer. It can also be a package. Metal 912 represents "a land or a metal connection pad formed on an LGA package." ^ 00 = Into the semiconductor device 91〇 is for illustration only. It is not intended to limit the connector θοο to only be used to connect wafers or LGA packages. The figure "and 9" is reversed and connected to the conductor device 910. Directional words used in the present invention are such as Π up / square Π, "and the top surface Π is intended to explain the relationship of the relative positions of the components of the connector. 'Dead as the connector is configured with the contact elements facing up. As shown in FIG. 9a, the connector 900 includes an array contact 902 on the substrate 904. Since the connector 900 is constructed on a semiconductor scale to be connected to a semiconductor device, the connector 900 is usually manufactured using a semiconductor material used in a semiconductor manufacturing method. In one embodiment, the substrate 904 is made of quartz, silicon or ceramic wafer, and the contact element 902 is located on the dielectric layer, which may be a spin on silica formed on the substrate 904. (SOS), spin-on-glass (SOG), boron-phosphorus 5% oxysilane (BpTE0S), or pentaoxysilane (TE0S) layer. The 902 array of contact elements is typically formed in a two-dimensional array to match corresponding contact points on the semiconductor device 910 to be connected. In one embodiment, the connector 900 is formed to contact a contact metal pad having a pitch of 50 microns or less. Each contact element 90 2 includes a base portion 9 0 6 connected to the top surface of the substrate 90 4 and a curve
第18頁 1231621 五、發明說明(12) 或線形彈簧部分908自基座906延伸。彈簧部分908有一近 端與基座部分906連續,及一遠端穿出基板904之上。 彈簧部分908形成後與接觸平面以一角度或曲線離 開’該平面為接觸點之平面,接觸元件9 〇 2即與其及金屬 塾9 12之表面連接。彈簧部分9〇8形成後與基板表面成一凹 狀曲徑’或形成後與基板904之表面離開。因此,彈菁部 分9 0 8自金屬墊912之表面離開,因而當接觸金屬墊91^ 提供一控制之磨擦力。 、 作業時’一外部偏力,圖9a中以F代表,加在連接器 900上以壓縮連接器900抵住金屬墊912。接觸元件9〇2之彈 簧部分90 8以控制之磨擦動作與各金屬墊912連接,故每一 接觸元件90 2與各墊912成有效電連接。接觸元件9〇2之曲 徑或角度保證以最佳磨擦距離達到最佳接 為彈菁部分90 8在金屬墊912上與金屬墊912接觸時斤巨作離 仃通端之量。通常接觸力在5_1〇〇克,視應用而定, 磨払距離在5 - 4 0 0微米範圍。 接觸元件902之另一特性為彈簧部分9〇8可有一大 m 1別因為’簀部分9°8可在垂直*水平方向移 ^。之電路徑長度之彈性工作範圍可以達 J 接觸凡件9 0 2之丨丨電路炉具声” pp中炎泰 部分908之遠端流至接觸_= ,.、、電k必須自彈簧 觸开株ρμΪ 觸兀件〇2之基座部分間之距離。接 其可使連接器在待接之半導體 <仟\王長度故 變化及位置失調。牛導體成電子裳置中容納正常共面 第19頁 五、發明說明(13) 接觸元件9 0 2係利用導電金屬形成, =在—實施例,,接觸元件,係利^ 及Λ Λ :形*,其事後可以電鍍以獲得理想電 及/或^性订為。在另一實施例中,接觸元件9G2係利 多】薄片’如不銹鋼片鍍以銅-鎳-金(Cu/Ni/Au) 較佳實施例中,接觸元件9°2係利用微粒 以提供非氧化表面。在另一實施例中, 電^ 用不同金屬為基座部分及彈簧部分形成。 係利 所示之實施例中,接件9〇2顯示具有矩形基座部 I、— /部分908 °本發明之接觸元件m構型形 成,:一接觸兀件僅需一基座部分足夠連接彈簧部分至旯 J :此:簧部分可有任何則大’及形成一圓環或其他有; 自乂美二邮?接觸几件至基板。一接觸元件可包括彈簧部分 自基座部分延伸。 貝I刀 Π圖nL〇aA1〇b說明本發明另一實施例之連接器100〇。連 ==一陣列接觸元件1002在基板1〇〇4上形成。每 接觸7L件1 0 0 2包括一基座部分1〇〇6,及二曲線 3=1¾010自基座部分1 0 0 6延伸。彈簧部分1 0 08及⑺1。: 1 oil血强f基板1 004之上,及彼此面對。彈簧部分1 0 08及 半而赫 部分9°8相同。即彈簧部分⑽8及1()1°自接點 及每一具有曲徑以便在待連接之半導體裝置之 接4連接時,提供控制之磨擦動作。 連接器1 0 0 0可用以接觸半導體裝置1〇2〇,如BGA封 1231621Page 18 1231621 V. Description of the invention (12) or linear spring portion 908 extends from the base 906. The spring portion 908 has a proximal end that is continuous with the base portion 906, and a distal end that penetrates above the base plate 904. After the spring portion 908 is formed, it is separated from the contact plane at an angle or a curve. The plane is the plane of the contact point, and the contact element 902 is connected to the surface of the contact element 912 and the metal 塾 912. After the spring portion 908 is formed, it forms a concave meandering radius with the surface of the substrate or it is separated from the surface of the substrate 904 after being formed. Therefore, the elastic part 908 is separated from the surface of the metal pad 912, and thus provides a controlled frictional force when contacting the metal pad 91 ^. During operation, an external biasing force, represented by F in Fig. 9a, is added to the connector 900 to compress the connector 900 against the metal pad 912. The spring portion 90 8 of the contact element 902 is connected to each metal pad 912 by a controlled friction action, so each contact element 90 2 is effectively electrically connected to each pad 912. The curvature or angle of the contact element 902 ensures that the optimal friction distance is used to achieve the optimal connection. The elastic part 90 8 is the amount of the distance from the through end when the metal pad 912 contacts the metal pad 912. The contact force is usually 5-100 g, depending on the application, and the grinding distance is in the range of 5-400 microns. Another characteristic of the contact element 902 is that the spring portion 908 can have a large m 1. Don't because the '箦 portion 9 ° 8 can move in the vertical * horizontal direction ^. The flexible working range of the length of the electric path can reach J contact all parts 9 0 2 of the circuit stove sound ”pp in the remote part of the Yantai part 908 flow to the contact _ = 、,,, k must be opened from the spring Strain ρμΪ The distance between the base parts of the contact piece 〇2. Connecting it can make the connector change in length and position misalignment in the semiconductor to be connected 导体 王 王. King conductor into an electronic dress to accommodate a normal coplanar section Page 19 V. Description of the invention (13) The contact element 9 0 2 is formed using a conductive metal, ==-Example, contact element, system ^ and Λ Λ: shape *, which can be electroplated afterwards to obtain the desired electricity and / Or in other embodiments, in another embodiment, the contact element 9G2 is a lido] sheet such as a stainless steel plate is plated with copper-nickel-gold (Cu / Ni / Au). In a preferred embodiment, the contact element 9 ° 2 is The particles are used to provide a non-oxidized surface. In another embodiment, the base is formed by using different metals as the base portion and the spring portion. In the illustrated embodiment, the connector 902 is shown to have a rectangular base portion I. 、 / / Part 908 ° The configuration of the contact element m of the present invention is formed: a contact element only needs one base The part is sufficient to connect the spring part to the 旯 J: This: The spring part can be any larger 'and form a ring or other; Since the Ameri Post? Contact how many pieces to the substrate. A contact element can include the spring part from the base Partially extended. Fig. NL0aA10b illustrates a connector 100 of another embodiment of the present invention. The connection == an array of contact elements 1002 is formed on the substrate 1004. Each contact 7L pieces 100 2 includes a base portion 1006, and a curved line 3 = 1¾010 extending from the base portion 1006. The spring portions 1008 and ⑺1: 1 oil blood strength f on the substrate 1 004, and facing each other Yes. The spring part 10 08 and the half and the hertz part 9 ° 8 are the same. That is, the spring part ⑽8 and 1 () 1 ° self-contacts and each has a curved diameter so that when the connection of the semiconductor device to be connected is provided, Controlled friction action. Connector 1 0 0 can be used to contact semiconductor device 1020, such as BGA seal 1231621.
包,包括裝在基板1 024上為接點之一陣列焊球1〇22。圖 Ijb說明連接器1〇〇〇已充分與半導體裝置1〇2〇連接。連接 裔1 0 0 0可用以接觸如陸網格陣列封包上之金屬墊。但,利 用連接器1 〇 〇 〇以接觸焊球可提供特殊優點。 首先’接觸元件1 0 0 2沿焊球之側邊接觸焊球。與焊球 1022之基座表面不接觸。因此,接觸元件1002在接觸期間 不會損害焊球1 0 2 2之基座表面,並可在焊球1 〇 2 2隨後作永 久連接之再流動時,有效消除坑洞形成之可能性。 其次,因為接觸元件1002之彈簧部分1008及1010之形 成自接觸平面離開,在本案例下,其與與接觸之焊球1022 之侧表面成切面,接觸元件1 0 0 2在與各焊球接觸時,提供 一控制之磨擦動作。以此方式,有效電連接可以完成,而 無損壞焊球1 0 2 2之表面。 第三,連接器1 0 0 0予以比例及可用以接觸節距為2 5 0 微米或更小之焊球。 最後,因為每一接觸元件1002在電路徑長度上有一大 彈性工作範圍,接觸元件丨0 〇 2可容納大範圍之壓縮。因 此,本發明之連接器可用以有效接觸具有正常共面變化及 位置失調之傳統裝置。 圖11及1 2說明本發明另一實施例之連接器。參考圖 11 ’連接器1100包括一接觸元件1102在基板1104上形成。 接觸元件11 0 2包括基座部分11 〇 6,第一曲線彈簧部分 1108,及第二曲線彈簧部分1110。第一曲線彈簧部分11〇8 及第二曲線彈簧部分丨丨丨〇具有遠端,彼此分開。接觸元件The package includes an array of solder balls 1022 mounted on a substrate 1 024 as one of the contacts. Figure Ijb illustrates that the connector 1000 is sufficiently connected to the semiconductor device 1020. The connection 1 100 can be used to contact a metal pad on a land grid array packet. However, the use of the connector 1000 to contact the solder balls provides special advantages. First, the 'contact element 1 0 2 contacts the solder ball along the side of the solder ball. Not in contact with the base surface of solder ball 1022. Therefore, the contact element 1002 does not damage the base surface of the solder ball 10 2 2 during the contact, and can effectively eliminate the possibility of pit formation when the solder ball 1 2 is subsequently reflowed for permanent connection. Secondly, since the formation of the spring portions 1008 and 1010 of the contact element 1002 is separated from the contact plane, in this case, it is tangent to the side surface of the contact solder ball 1022, and the contact element 1002 is in contact with each solder ball Provides a controlled friction action. In this way, an effective electrical connection can be made without damaging the surface of the solder ball 10 2 2. Third, the connector 1000 is scaled and can be used to contact solder balls with a pitch of 250 microns or less. Finally, because each contact element 1002 has a large elastic working range over the length of the electrical path, the contact element 0 02 can accommodate a wide range of compression. Therefore, the connector of the present invention can be used to effectively contact a conventional device having a normal coplanar change and a misaligned position. 11 and 12 illustrate a connector according to another embodiment of the present invention. Referring to FIG. 11 ', the connector 1100 includes a contact element 1102 formed on a substrate 1104. The contact element 110 2 includes a base portion 110, a first curved spring portion 1108, and a second curved spring portion 1110. The first curved spring portion 1108 and the second curved spring portion 丨 丨 丨 〇 have distal ends and are separated from each other. Contact element
12316211231621
1102可用以連接一包括一金屬墊或焊球之接觸點。卷用、 連接一焊球時,接觸元件1102將焊球成支架於第一及第: 彈簧部分11 08與mo之間,與圖3e中所示相似。 ~ 囚此,第1102 can be used to connect a contact point including a metal pad or solder ball. When rolling and connecting a solder ball, the contact element 1102 forms the solder ball between the first and second: spring portions 11 08 and mo, similar to that shown in FIG. 3e. ~ Prisoner, No.
一及第二彈簧部分i丨08及丨丨丨〇以控制之磨擦動作接觸焊二 之側表面於一離開焊球平面之方向。 、V 圖12說明位於基板1 202上之接觸元件1 20 0。接觸元 1200包括基座部分1204及第二曲線彈簧部分1208,自$座 部分1 204延伸。第一彈簧部分12〇6及第二彈簧部分12〇"8 = 螺旋構型穿出基板1 2 02之上。接觸元件1 2 0 0可用以接觸j 金屬墊或焊球。在二情況下,第一及第二彈簧部分12〇6及 1 2 0 8自接觸平面曲線離開並提供控制之磨擦動作。 圖13a-13c為連接器13〇0之剖面圖,其可應用於熱交 換作業中。參考圖13a,連接器1 30 0顯示為無負載情況。 連接器1 3 0 0將連接至陸格陣列(LGA)封包132〇及印刷電路 板(PC板)1 330。LGA封包1 32 0上之墊1 322代表LGA封包1320 中之積體電路之一電源連接(正電源供應電壓或地電位), 其將連接至PC板1330上之墊1332。墊1332為電主動或已供 電。LGA封包1 320上之墊1 324代表積體電路之信號銷,其 將連接至PC板1 33 0上之墊i 334。為完成熱交換作業,電源 墊1322應在信號墊1324連接至墊1334之前,連接至墊 1332。連接器1300包括接觸元件13〇4,13〇6於基板13〇2 中L邊兀件有一延伸之高度及較接觸元件1 3 0 8及1 3 1 〇為大 之彈性工作範圍,俾LGA封包1 320與PC板1 330間之熱交換 作業利用連接器1 3 0 0實現。接觸元件13〇4及13〇6之高度需The first and second spring portions i 丨 08 and 丨 丨 丨 〇 contact the side surfaces of the solder 2 in a direction away from the plane of the solder ball with a controlled friction action. , V FIG. 12 illustrates a contact element 120 on a substrate 1 202. The contact element 1200 includes a base portion 1204 and a second curved spring portion 1208, which extends from the base portion 1204. The first spring portion 1206 and the second spring portion 120 " 8 = the spiral configuration penetrates out of the substrate 1 2 02. The contact element 1 2 0 0 can be used to contact j metal pads or solder balls. In two cases, the first and second spring portions 1206 and 1208 leave from the contact plane curve and provide a controlled friction action. 13a-13c are cross-sectional views of the connector 1300, which can be used in heat exchange operations. Referring to FIG. 13a, connector 130 is shown as a no-load condition. The connector 1 3 0 0 will be connected to a Luger Array (LGA) package 132 0 and a printed circuit board (PC board) 1 330. Pad 1 322 on LGA packet 1 32 0 represents a power connection (positive power supply voltage or ground potential) of one of the integrated circuits in LGA packet 1320, which will be connected to pad 1332 on PC board 1330. The pad 1332 is electrically active or powered. Pad 1 324 on LGA packet 1 320 represents the signal pin of the integrated circuit, which will be connected to pad i 334 on PC board 1 330. To complete the heat exchange operation, the power supply pad 1322 should be connected to the pad 1332 before the signal pad 1324 is connected to the pad 1334. The connector 1300 includes the contact elements 1304 and 1306 in the substrate 1302. The L-side element has an extended height and has a larger elastic working range than the contact elements 1308 and 1310. 俾 LGA package The heat exchange operation between the 1 320 and the PC board 1 330 is realized by the connector 1 300. The height of the contact elements 1304 and 1306 needs
1231621 五、發明說明(16) 加以選擇以獲得理想之接觸力,及理想之空間以達可靠之 熱交換作業。 圖13說明利用連接器13〇〇將LGA封包1 320安裝至PC板 1 33 0上之中間步驟。當LGa封包i 32〇及pc板1 33 0壓縮一起 以抵住連接器1300時,墊1322及墊1332將電連接至各接觸 元件1 308及1310。以此方式LGA封包1 32 0與PC1 3 3 0板間之 電源連接在信號墊連接前已建立。 圖13c說明在充分負載情況下,LGA封包1320之安裝在 PC板1 330上。以施加進一步壓力,lga封包1 320被壓縮抵 住連接器1 30 0,俾接觸元件1 3 08與信號墊1 324連接。同 理,PC板1 33 0被壓縮抵住連接器13〇〇,俾接觸元件131〇與 墊1 334連接。LGA封包1 320因此安裝在pc板1 33 0上。在連 接器1300中,較高之接觸元件13〇4及13〇6受壓縮較大,以 使較短接觸元件1 30 8及1310連接,連接器所需之接觸力將 增加。為使連接器所需之全部接觸力最小,較高接觸元件 1 304及1 306可設計為具較低之彈性常數,俾 在充分負載之下可為最佳連接力。 接觸件 圖14a說明本發明之電路化連接器14〇〇之實施例。連 接器1 400包括一接觸元件1 404於介電基板14〇2之頂表面, 基板在介電基板1402之底表面上與與接觸元件14〇6連 接觸元件1 404連接至表面安裝之電組件 。 電組件1412。電組件㈣及1412可為去柄合電容器;= 接器1 400上’俾電容器可被置於儘可能接近電子組件^連 處。在傳統積體電路中,此種去耦合電容器通常被置於印1231621 V. Description of the invention (16) Choose to obtain the ideal contact force and the ideal space for reliable heat exchange operations. FIG. 13 illustrates an intermediate step of mounting the LGA packet 1 320 on the PC board 1 330 by using the connector 1300. When the LGa packet i 32 and the pc board 1 330 are compressed together against the connector 1300, the pads 1322 and 1332 will be electrically connected to the respective contact elements 1 308 and 1310. In this way, the power connection between the LGA packet 1 32 0 and the PC 1 330 is established before the signal pads are connected. FIG. 13c illustrates the mounting of the LGA packet 1320 on the PC board 1 330 under a fully loaded condition. With further pressure applied, the lga packet 1 320 is compressed against the connector 1 300, and the contact element 1 3 08 is connected to the signal pad 1 324. Similarly, the PC board 1 330 is compressed against the connector 1300, and the contact element 131 is connected to the pad 1334. The LGA packet 1 320 is therefore mounted on the pc board 1 330. In the connector 1300, the higher contact elements 1304 and 1306 are more compressed, so that the shorter contact elements 1308 and 1310 are connected, and the contact force required by the connector will increase. In order to minimize the total contact force required by the connector, the higher contact elements 1 304 and 1 306 can be designed to have a lower elastic constant, which can be the best connection force under sufficient load. Contacts Figure 14a illustrates an embodiment of a circuitized connector 1400 of the present invention. The connector 1 400 includes a contact element 1 404 on the top surface of the dielectric substrate 1402. The substrate is on the bottom surface of the dielectric substrate 1402 and is connected to the contact element 1406. The contact element 1 404 is connected to a surface-mounted electrical component. . Electrical components 1412. The electrical components ㈣ and 1412 may be decoupling capacitors; = capacitors on the connector 1 400 may be placed as close as possible to the electronic components. In traditional integrated circuits, such decoupling capacitors
1231621 五、發明說明(17) 刷電路板上,距電子組件甚遠。 ^ ^ 與實際之去耦合電容器間存在_ Λ 待補償之電子組件 容器效應變為最小。利用電路化::/因而使去耦合電 器可置於儘可能距電子組件Λ % / 40 0,去耦合電容 器之效益。其他可使連接器=2電=去=電容 器,電感器,及其他主動或被動電子组件、、。牛’匕括電阻 圖14b說明本發明電路化連接 ^ 器1 420包括介電基板! 422上之f 貫施例。連接 _輕合至焊球終端“26。接接= J ;電子組件143〇及至傲入之電子組件連;=面二: =:1 426不必與接觸元件“24對齊,只要接觸電 =^終端即可,如經通路142❻合至終端。注意,本發 可UP —接器之構造可無基板中之釋放洞。電接觸或通路可 L疋於偏移洞中,或以適合方式以提供一體電連接或 至基板之對側。 根據本發明之另一方面,連接器可包括一或多個同軸 觸疋件。圖1 5a及1 5b顯示一包括本發明一實施例之同軸 f觸元件之連接器15〇〇。參考圖15&,連接器15〇〇包括第 接觸元件1504及第二接觸元件1506形成於介電基板1502 之頂表面上。接觸元件丨5 〇 4及丨5 〇 6形成於彼此接近,但為 彼此電隔離。接觸元件15〇4包括一基座部分,以孔隙15〇8 之外環方式形成,而接觸元件1 5 0 6包括一基座部分,則以 ^隙1 5 08之内環方式形成。每一接觸元件1 5 04及1 506包括 二個彈性部分(圖15b)。接觸元件1 504之彈性部分不與接1231621 V. Description of the invention (17) Brush the circuit board, far from the electronic components. ^ ^ There is an actual decoupling capacitor _ Λ Electronic components to be compensated The container effect is minimized. Take advantage of circuitization: / and thus make the decoupling capacitors as close as possible to the electronic components Λ% / 40 0, the benefits of decoupling capacitors. Others can make connectors = 2 electrical = to = capacitors, inductors, and other active or passive electronic components. Figure 14b illustrates the circuitized connection of the present invention. Device 1 420 includes a dielectric substrate! The implementation of f on 422. Connection_light-on to solder ball terminal "26. Connection = J; electronic component 143〇 and arrogant electronic component connection; = surface two: =: 1 426 does not need to be aligned with the contact element" 24, as long as the contact = = terminal That is, if it is coupled to the terminal via the path 142. Note that the present invention can be UP-connector structure without the release hole in the substrate. The electrical contacts or vias may be trapped in the offset holes, or in a suitable manner to provide an integral electrical connection or to the opposite side of the substrate. According to another aspect of the invention, the connector may include one or more coaxial contacts. 15a and 15b show a connector 150 including a coaxial f-contact element according to an embodiment of the present invention. 15 & A connector 150 includes a first contact element 1504 and a second contact element 1506 formed on a top surface of a dielectric substrate 1502. The contact elements 504 and 506 are formed close to each other, but are electrically isolated from each other. The contact element 1504 includes a base portion formed as an outer ring of the aperture 1508, and the contact element 1506 includes a base portion formed as an inner ring of the gap 1508. Each contact element 1504 and 1506 includes two elastic portions (Fig. 15b). The elastic part of the contact element 1 504 is not connected.
第24頁 1231621 五、發明說明(18) 觸元件1 5 0 6之彈性部分重疊。接觸元件1 504經至少一通路 1512連接至介電基板1502之底表面上之接觸元件151〇。接 觸元件1 5 0 4及1 5 1 0形成第一電流路徑,稱為連接器丨5 〇 〇之 外電路路徑。接觸元件1 5 0 6經孔隙1 5 0 8中之金屬執跡丨5丄6 連接至介電基板1502底表面上之接觸元件1514。接觸元件 1504及1514形成連接器1500之第二電流路徑,稱為連接器 1 5 0 0之内電流路徑。 如此構造後,連接器1 5 0 0可將一LGA封包1 52 0上之同 軸連接互聯至PC板1 5 3 0上之同軸連接。圖1 6說明LGA封包 1 52 0與PC板1 53 0經連接器1 5 0 0之匹配。當LGA封包1 520裝 在連接器1500上時’接觸元件1504與LGA封包1520上之墊 1522連接。同理,當?(]板1530裝在連接器15〇〇上時,接觸 元件1510與PC板1 53 0上之墊1 5 32連接。結果,形成墊1522 與塾1 5 3 2間之外電流路徑。外電流路徑構成一地電位連 接。接觸元件1 5 0 6與LGA封包1 520上之墊1 524連接,接觸 兀件1514與PC板1 53 0上之墊1 534連接。結果,墊1 524與墊 1 534間形成一内電流路徑。内電流路徑構成一高頻信號。 [j〇97]連接器1 50 0之特別優點為同軸接觸元件可以^/成工 毫米或更小之尺寸。因此連接器15〇〇可用以提供同軸連 接’即使小外形電子組件亦可。 電連接器製造方法 圖17a-17h說明本發明一實施例之圖9a中之連接器9〇〇 之形成處理步驟。參考圖17a,備有一基板17〇〇,一接觸 π件位於其上。基板17〇〇可為一矽晶圓或陶晶圓,其可包Page 24 1231621 V. Description of the invention (18) The elastic part of the contact element 1 5 0 6 overlaps. The contact element 1 504 is connected to the contact element 1510 on the bottom surface of the dielectric substrate 1502 via at least one via 1512. The contact elements 15 0 4 and 15 10 form a first current path, which is called a circuit path outside the connector 5500. The contact element 15 0 6 is connected to the contact element 1514 on the bottom surface of the dielectric substrate 1502 via the metal track 丨 5 丄 6 in the aperture 1 5 0 8. The contact elements 1504 and 1514 form a second current path of the connector 1500, which is called a current path within the connector 1500. With this structure, the connector 1 500 can interconnect the coaxial connection on an LGA packet 1520 to the coaxial connection on the PC board 1530. Figure 16 illustrates the matching between the LGA packet 1 52 0 and the PC board 1 5 30 via the connector 15 0 0. When the LGA packet 1 520 is mounted on the connector 1500, the 'contact element 1504 is connected to the pad 1522 on the LGA packet 1520. Similarly, when? (] When the board 1530 is mounted on the connector 1500, the contact element 1510 is connected to the pad 1 5 32 on the PC board 1 53 0. As a result, a current path outside the pad 1522 and 塾 1 5 3 2 is formed. External current The path constitutes a ground potential connection. The contact element 15 0 6 is connected to the pad 1 524 on the LGA package 1 520, and the contact element 1514 is connected to the pad 1 534 on the PC board 1 53 0. As a result, the pad 1 524 and the pad 1 An internal current path is formed between 534. The internal current path constitutes a high-frequency signal. [J〇97] The special advantage of the connector 1500 is that the coaxial contact element can be sized / mm or smaller. Therefore, the connector 15 〇〇 can be used to provide a coaxial connection 'even small form factor electronic components are also possible. Electrical connector manufacturing method Figures 17a-17h illustrate an embodiment of the present invention in Figure 9a connector 900 formation process steps. Referring to Figure 17a, A substrate 1700 is prepared, and a contact π is located thereon. The substrate 1700 can be a silicon wafer or a ceramic wafer, which can be packaged.
第25頁 1231621 五、發明說明(19) 括一形成其上之介電層(圖17a未示出)°SOS,SOG, BPTEOS或TEOS之介電層可在基板1 7 0 0上形成,以將接觸元 件與基板隔離。之後,一支撐層1 7 0 2在基板1 7 0 0上形成。 支撐層1 702可為一沉積之介電層,如氧化物層,氮化物 層,一介電上自旋,一聚合體,或任何可蝕刻之材料。支 撐層1 702可以不同方法沉積,包括化學蒸氣沉積(cvd), 電漿祭氣沉積(P V D )’自旋方法,或,當基板1 7 0 0未被介 電層或導電結合層涵蓋時,支撐層1702可利用在半導體製 造使用之氧化方法生長。 支撐層1 70 2沉積後,遮罩層1 7 04在支撐層1 702之頂表 面形成。遮罩層1 7 0 4傳統之微影方法聯合用以遮罩層1 7 0 4 限定一圖案於支撐層1 7 0 2。遮罩層印刷及顯影後,(圖 17b) ’ 一遮罩圖案,包括區域1 704a及1 704c在支撐層1702 上形成’限定支撐層1 7 0 2之一區域並被保護不受隨後钱刻 影響。 參考圖17c,利用區域1704a-1704c為遮罩實施各向異 性蝕刻。各向異性蝕刻之結果,未被圖案化眼膜涵蓋之支 撐層1 7 0 2之部分被消除。準此,支撐區域17〇2a —17〇2c形 成。包括1 704a-1 704c區域之遮罩圖案隨後被消除以曝露 支撐區域(圖17d)。 支撐區域1702a-1702c之後接受各向同性蝕刻。各向 同性#刻方法可以相同餘刻率’消除在垂直及水平方向钱 刻之材料。因此,各向同性蝕刻之結果,支撐區域17〇2&一 1 7 0 2 c被圓形化,如圖1 7 e所示。在一實施例中,各向同性Page 25 1231621 V. Description of the invention (19) Including a dielectric layer formed thereon (not shown in FIG. 17a) ° SOS, SOG, BPTEOS or TEOS dielectric layer can be formed on the substrate 1700 Isolate the contact element from the substrate. After that, a support layer 17 2 is formed on the substrate 1 700. The support layer 1 702 may be a deposited dielectric layer, such as an oxide layer, a nitride layer, a dielectric spin, a polymer, or any etchable material. The support layer 1 702 may be deposited by different methods, including chemical vapor deposition (cvd), plasma sacrificial gas deposition (PVD) 'spin methods, or when the substrate 1700 is not covered by a dielectric layer or a conductive bonding layer, The support layer 1702 can be grown using an oxidation method used in semiconductor manufacturing. After the support layer 1 70 2 is deposited, a mask layer 1 7 04 is formed on the top surface of the support layer 1 702. The mask layer 17 0 4 is traditionally used in combination with the mask layer 17 0 4 to define a pattern on the support layer 1 7 2. After the mask layer is printed and developed, (Figure 17b) a mask pattern including areas 1 704a and 1 704c is formed on the support layer 1702 to define one of the areas of the support layer 1 7 2 and be protected from subsequent money engraving. influences. Referring to Fig. 17c, anisotropic etching is performed using the regions 1704a-1704c as a mask. As a result of the anisotropic etching, the portion of the support layer 17 2 that is not covered by the patterned eye mask is eliminated. In this way, support areas 1702a-172c are formed. The mask pattern including areas 1 704a-1 704c was then removed to expose the support area (Figure 17d). The support regions 1702a-1702c are then subjected to isotropic etching. The isotropic #etching method can eliminate the material engraved in the vertical and horizontal directions with the same remaining rate. Therefore, as a result of the isotropic etching, the support region 17 2 & 1 70 2 c is rounded, as shown in FIG. 17 e. In one embodiment, isotropic
第26頁 1231621 五、發明說明(20) ----- 蝕刻方法為電漿蝕刻,利用SF6,CHF3,CF4(b〇e )或其他 用以蝕刻介電材料之知名化學物質。在另一實施例中,各 向同性蝕刻為濕蝕刻方法,如利用緩衝之氧化物蝕刻 (Β Ο E )之濕钱刻。 參考圖17f,一金屬層1706於基板17〇〇上表面上及支 撐區域170 2a-170 2c形成。金屬層1706可為一銅層,銅合 金(Cu合金)層,或多層金屬沉積,如鎢鍍以銅_鎳—金(Cu〜 Ni-Au)。在一實施例中,接觸元件利用微粒銅鈹(CuBe)合 金开> 成,再以化學鍵鎳-金(Ni-Au)以提供一非氧化表面。 金屬層1706可用CVD方法沉積,電鍍,潑濺,PVD或其他傳 統金屬薄膜沉積方法。一遮罩層利用沉積及圖案化方法遮 罩區域1 708a- 1 708c形成。遮罩區域I 708a- 1 70 8c限定金屬 層1 7 0 6之區域並受隨後蝕刻之保護。 圖1 7 f中之結構於是受到蝕刻處理,以消除金屬層未 被遮罩區域涵蓋之部分。結果,金屬部分丨7 〇 6 a —丨7 〇 6 c形 成,如圖17g所示。每一金屬部分17063 —17〇6c包括基板 1700上形成之基座部分,及一曲線彈簣部分於各支撐區形 成(1702a-1702c)。準此,每一金屬部分之曲線彈簧部分 與下面支撐區之形狀相同,穿出基板1700之表面。 為完成連接器’支撐區域1 7 0 2 a - 1 7 0 2 c利用濕姓刻, 各向異性電漿蝕刻或其他蝕刻方法消除(圖1 7h)。如支撐 層係利用氧化物層形成,可利用緩衝氧化物蝕刻劑消除支 標區域。結果,自由站立之接觸元件171〇a—171〇c在基板 1 7 0 0上形成。Page 26 1231621 V. Description of the invention (20) ----- The etching method is plasma etching, using SF6, CHF3, CF4 (b0e) or other well-known chemical substances used to etch dielectric materials. In another embodiment, the isotropic etching is a wet etching method, such as wet etching using buffered oxide etching (B0E). Referring to FIG. 17f, a metal layer 1706 is formed on the upper surface of the substrate 1700 and the support regions 170 2a-170 2c. The metal layer 1706 may be a copper layer, a copper alloy (Cu alloy) layer, or a multilayer metal deposition such as tungsten plated with copper_nickel-gold (Cu ~ Ni-Au). In one embodiment, the contact element is formed using a particulate copper beryllium (CuBe) alloy, and then chemically bonded with nickel-gold (Ni-Au) to provide a non-oxidized surface. The metal layer 1706 may be deposited by CVD, electroplating, sputtering, PVD, or other conventional metal thin film deposition methods. A mask layer is formed using a deposition and patterning method to mask the regions 1 708a-1 708c. The mask area I 708a- 1 70 8c defines the area of the metal layer 17 0 6 and is protected by subsequent etching. The structure in Fig. 17f is then etched to eliminate portions of the metal layer that are not covered by the masked area. As a result, the metal portions 7o6a to 7o6c are formed, as shown in Fig. 17g. Each metal portion 17063-1760c includes a base portion formed on the substrate 1700, and a curved elastic portion is formed in each support area (1702a-1702c). In this way, the curved spring portion of each metal portion has the same shape as the supporting area below, and penetrates out of the surface of the substrate 1700. In order to complete the connector's supporting area 17 0 2 a-1 7 0 2 c, it is etched with a wet name, and anisotropic plasma etching or other etching methods are used to remove it (Fig. 17h). If the support layer is formed using an oxide layer, a buffer oxide etchant can be used to eliminate the support area. As a result, the free standing contact elements 1710a-171oc are formed on the substrate 1700.
1231621 五、發明說明(21) — 變化之上述程序亦可製造本發明之連接器。例如,各 向同性钱刻程序之化學及蝕刻條件可以配合,以提供支斤 區域中之理想形狀’俾接觸元件具有理想之曲徑。利用半 導體處理技術,連接器可以具有不同特性之接觸元件製 造。例如,第一組接觸元件可以第一節距形成,第—^ 觸元件可以較第一節距為大之第二節距形成。上;;; 電及機械特性之變化亦屬可能。 圖18a及18b說明本發明另一實施例之與連接器14〇〇相 似之電路化連接器之形成之第一及最後處理步驟。參考圖 18a ’備有包括預限定電路18〇2之基板18〇〇。預限定/電路 1802包括互聯之金屬層或其他電裝置,如電容器及電感 裔,其典型在基板1800中形成。一頂部金屬部分在基 板1 8 0 0之頂表面上形成,以連接待形成之接觸元件。一支 撐層1806及一遮罩層1 80 8在基板18⑽之頂表面形成。 與上述圖17b-17g有關相似之步驟用以形成 _(圖叫。形成後,連接元件181〇電連接件 1 802。以此方式,本發明之連接器可提供額外之功能。例 如,電路1 802形成後可用以連接某些接觸元件於一起。電 路1 8 0 2亦可連接接觸元件至電路裝置基板“上 容器或電感器。 /上Φ成之^电 製造接觸元件1 8 1 0作為 能提供進一步優點。特別是 與下面電路1 8 0 2間形成。接 不連續及阻抗失調情況。在 積體電路製造方法之一部方尚 ,連續電路徑在接觸元件181〇 觸元件與相關電路間並無金屬 ㊂知技藝連接器中,利用金接1231621 V. Description of the invention (21)-The above-mentioned procedure can also be used to manufacture the connector of the present invention. For example, the chemistry and etching conditions of the isotropic coin engraving process can be matched to provide an ideal shape in the support area. The contact element has an ideal labyrinth. With semiconductor processing technology, connectors can be manufactured with contact elements with different characteristics. For example, the first group of contact elements may be formed at a first pitch, and the first contact element may be formed at a second pitch that is larger than the first pitch. Changes in electrical and mechanical characteristics are also possible. Figures 18a and 18b illustrate the first and final processing steps of forming a circuitized connector similar to the connector 1400 according to another embodiment of the present invention. Referring to FIG. 18a ', a substrate 1800 including a pre-defined circuit 1802 is prepared. The predefined / circuitry 1802 includes interconnected metal layers or other electrical devices, such as capacitors and inductors, which are typically formed in a substrate 1800. A top metal portion is formed on the top surface of the substrate 180 to connect the contact elements to be formed. A supporting layer 1806 and a masking layer 1 80 8 are formed on the top surface of the substrate 18A. 17b-17g are similar to the steps described above to form _ (picture called. After formation, the connecting element 1810 electrically connects 1 802. In this way, the connector of the present invention can provide additional functions. For example, circuit 1 After 802 is formed, it can be used to connect some contact elements together. The circuit 1 8 0 2 can also be connected to the circuit device substrate "on the container or inductor. / 上 Φ 成 之 ^ Electrically make the contact element 1 8 1 0 as energy Provides further advantages. Especially formed with the following circuit 180 2. Discontinuities and impedance mismatch. In one part of the integrated circuit manufacturing method, the continuous electrical path is between the contact element 1810 contact element and the related circuit. There is no metal know-how connector using gold connection
第28頁 1231621 ------- 五、發明說明(22) :線=成接觸元件。但此一結構導致全 f道及在接觸件與下方金屬連接間之介面之阻/面不連 故導致不理想之電特性及不良高頻作業。抗不匹配, 根據本發明之另一方面一 接觸元件。即,連接$ 1 6 f ^ 一具有不同作業特性之 特性可加以選擇以達到理相庫 凡件之作業 係指其電,機械及可用接觸元件之特性 械特性之接觸元件併入一起 ^ ^同之電及/或機 用之嚴格電,機械靠;需ΐ…達到高性能互聯應 改變mj元:械特性可經改變以下之設計參數而 供接觸兀件之彈簧部分之厚度可加以選擇以提 * # 之觸力。例如,厚度為3 0微米之彈簧可提供約1 〇 付1小之低接觸力,厚度40微米之彈簧部分可提供相同 :之較高約20克接觸力。彈簧部分長度及形狀 亦可加選擇以提供理想接觸力。 理相其ί ’接觸兀件中之彈簧部分之數目可加選擇以達到 彈^ U力’理想載負能力,及理想接觸阻力。例如, 部份數目加倍可加倍接觸力及載負力,但略降低二因 數之接觸阻力。 紐Β = 了,特殊金屬成分及處理可加以選擇以獲得理想彈 夕搶彳、道率特性。例如’鋼合金如鈹銅,可用以提供良好 :::彈性與電傳導率間之折衷。或•,金屬多層可用以 /、〈好之電及機械特性。在一實施例中,力利用鈦(Ti) 、又以銅(Cu)形成接觸元件,之後,以鎳(Ni),最後以金Page 28 1231621 ------- V. Description of the invention (22): Line = contact element. However, this structure results in the full f-channel and the interface / surface non-connection between the contact and the underlying metal connection, which leads to undesired electrical characteristics and poor high-frequency operation. Anti-mismatch, a contact element according to another aspect of the invention. That is, the connection of $ 1 6 f ^ a characteristic with different operating characteristics can be selected to achieve the physical phase library. The operation refers to the combination of electrical, mechanical, and usable contact components with mechanical characteristics. ^ ^ Same The electricity and / or the machine's strict electricity are mechanically dependant; need to ... to achieve high-performance interconnection, the mj element should be changed: the mechanical characteristics can be changed by changing the following design parameters and the thickness of the spring part for the contact element can be selected to improve * Touch of #. For example, a spring with a thickness of 30 micrometers can provide a low contact force of about 10 to 1 small, and a spring part with a thickness of 40 micrometers can provide the same: a higher contact force of about 20 grams. The length and shape of the spring part can also be selected to provide the ideal contact force. The reason is that the number of spring parts in the contact element can be selected to achieve the ideal load carrying capacity and the ideal contact resistance. For example, doubling the number of parts can double the contact force and load, but slightly reduce the contact resistance of the two factors. Button B =, special metal composition and treatment can be selected to obtain ideal bombing and track characteristics. For example, a 'steel alloy such as beryllium copper can be used to provide a good compromise between elasticity and electrical conductivity. Or •, metal multilayers can be used for / good electrical and mechanical properties. In one embodiment, the contact element is formed by using titanium (Ti) and copper (Cu), then nickel (Ni), and finally gold
1231621 五、發明說明(23) (八11)形成1^/(:1^:1/^11多層元件。1^可提供彈性及高機械韌 性,Cu可提供傳導率,Ni及Au層提供腐蝕阻力。最後,不 同金屬沉積技術電鍍或潑濺,及不同金屬處理技術如合 金,退火及其他冶金技術亦可使用以獲得接觸元件之理想 特性。 第四,彈簧部分之形狀可予以設計以提供某些電及機 械特性。彈簧部分之高度或自基座部分之突出之量可以變 化’以提供良好之電及機械特性。 圖19a-19d為一流程圖,說明根據本發明一實施例之 $觸元件形成之方法1 90 0。圖2〇_23b將討論方法19〇〇之内 =。方法1 9 0 0亦關於利用遮罩,蝕刻,形成,及堆疊技術 =批造接觸元件。方法19〇〇產生複數個高工 ;之=於可分離之連接器,如内插n,或直接統合;基 t ;二:為連續軌跡,隨後作為永久之機上連接器。 平面陣列^立之ί罩及蝕刻步驟形成三維彈簧部分,而以 十面陣列建立,再形成三維形狀。 彈簧::基本彈簧材料選定’如鈹銅(Be-Cu) 1 902)材料t匕二銅//他適於機械特性之材料(步驟 特性。基本材料選擇之—干〃有理想機械及電 圍為位移範圍,接觸-丛素為材料之工作範®。工作範 規格符4 件:須在接觸力(負載)及接觸阻力 :最大允許之接觸負载二η::力:於2〇毫歐姆’ 區人姆之阻力範圍於1〇多 接觸70件達成小於20毫 見之負載,於是樑構件載負超過最大 1231621 五、發明說明(24) ^ =40克,仍維持小於2〇毫歐姆阻力,於是接觸元件旅行 、,10克與4〇克間距離將為接觸點之工作範圍。 j片可在隨後之處理前熱處理(步驟19〇4)。該片是否 以脾^熱處理,由選擇之薄片材料型式決定。實施熱處理 f材料自半硬狀態移向硬狀態或高度張力狀態,以提高 理4之機械特性以形成接點。 一接觸元件設計後拷貝成陣列型式以備用於大批處理 驟1 906)。陣列中之接點數目為設計之選擇,可視連接 益^求而變化。陣列重覆成面板型式,類比半導體晶圓中 之晶片或晶模,導致一比例設計而導向成批處理。接觸元 件設計完成後,(在一CAD環境中)轉向為吉伯格式,其為 "擎碼器可使設計轉向製造設施以產生主滑片或薄膜以用 於隨後步驟。 ^面板格式可在一及多數接點之間之任何處,因為利用 微影’可在一面板上配置高密度之接點。此一高密度接點 提供較現有方法為優’因為可使用成批處理,與衝壓及形 成各別接點相比,可以單獨化接點。方法1 g 〇 q可使大量接 點立計即圖案化,顯影及I虫刻。 一微影敏感之抗腐蝕薄膜於是加在片之二側(圖2〇及 步驟1908)。可利用乾薄膜以供大尺寸自1—2〇密耳,液體 抗腐劑可用於小於一密耳之片。 利用步驟1 9 0 6限定之原圖,片之頂側及底側均曝露在 紫外光(UV)下,之後顯影以限定光阻劑中之接點特性(步 驟1910,圖21)。欲加以蝕刻之處不用遮罩保護。利用微 五、發明說明(25) 影方法限定垃g 一 導體製ϋ %1 兀件可使線之印刷有一較佳清晰度,與半 ,k所發現者相似。 為薄片所選=ί供5亥材料選擇之溶液中蝕刻(步驟1 91 2 )。 蝕刻特性1Γ ^ ^ 一特殊材料有一特定蝕刻化學可提供最佳 點在輪出上其炎f速率(液體實施蝕刻之速度及程度)。此 側壁輪廓及以二,。選擇之蝕刻劑亦影響其他特性,如 用工業中常用^面觀看時特性之直度。在方法1 900中,使 刻之德I 化學品,氣化銅,氯化鐵,氫氧化护 ^ J <谩,光阻杳丨丨 乳乳化硫。钱 蝕刻4# M f # 保蠖層在剝除程續中去除,留下h > J特徵(步驟1914,圖22)。 W下片上之 二據步驟19〇6中之原目,設1231621 V. Description of the invention (23) (Aug. 11) Formation of 1 ^ / (: 1 ^: 1 / ^ 11 multilayer components. 1 ^ can provide elasticity and high mechanical toughness, Cu can provide conductivity, and Ni and Au layers provide corrosion Resistance. Finally, different metal deposition techniques such as electroplating or sputtering, and different metal processing techniques such as alloys, annealing, and other metallurgical techniques can also be used to obtain the desired characteristics of the contact element. Fourth, the shape of the spring portion can be designed to provide a certain Some electrical and mechanical characteristics. The height of the spring portion or the amount of protrusion from the base portion can be varied to provide good electrical and mechanical characteristics. Figures 19a-19d are flow diagrams illustrating the touch of a device according to an embodiment of the present invention. The method of component formation is 1 900. Figure 20-23b will discuss within method 1900 =. Method 1900 is also about using masking, etching, forming, and stacking techniques = batching contact components. Method 19 〇 Generate a number of high-tech ;; = in the detachable connector, such as interpolated n, or directly integrated; base t; 2: continuous track, and then as a permanent on-board connector. Plane array ^ 立 之 ί 立And etching steps to form a three-dimensional spring portion It is divided into ten-sided arrays, and then formed into a three-dimensional shape. Spring :: The basic spring material is selected, such as beryllium copper (Be-Cu) 1 902) material t copper two copper // other materials suitable for mechanical properties (step characteristics .Selection of basic materials—the ideal mechanical and electrical range is the displacement range, and the contact-cluster is the working range of the material. The specification range of the working range is 4 pieces: the contact force (load) and contact resistance: the maximum allowable Contact load II η :: Force: The resistance range of 20 milliohms in the area is more than 10 contact with 70 pieces to achieve a load of less than 20 milliseconds, so the load of the beam member exceeds the maximum 1231621 V. Description of invention (24) ^ = 40 grams, still maintain less than 20 milliohm resistance, so the contact element travels, the distance between 10 grams and 40 grams will be the working range of the contact point. J pieces can be heat treated before subsequent processing (step 1904 ). Whether the sheet is heat-treated by the spleen depends on the type of sheet material selected. The heat treatment f material is moved from a semi-hard state to a hard state or a high tension state to improve the mechanical characteristics of the element 4 to form a contact. A contact element Copy into array after design To prepare bulk for pattern processing step 1906). The number of contacts in the array is a design choice and can vary depending on the connection requirements. The array is repeated into a panel pattern, analogous to a wafer or a die in a semiconductor wafer, resulting in a scaled design directed to batch processing. After the design of the contact elements was completed, (in a CAD environment) the switch was to the Gibbs format, which is a " engineer " that allows the design to shift to a manufacturing facility to produce a master slide or film for subsequent steps. ^ Panel format can be anywhere between one and many contacts, because lithography 'can be used to arrange high density contacts on a panel. This high-density contact is better than the existing method 'because batch processing can be used and the contacts can be individualized compared to stamping and forming individual contacts. Method 1 g 0 q enables a large number of contacts to be immediately patterned, developed, and engraved. A lithographically sensitive anticorrosive film is then applied to both sides of the sheet (Figure 20 and step 1908). Dry films are available for large sizes from 1 to 20 mils, and liquid preservatives can be used for tablets smaller than one mil. Using the original image defined in step 1906, the top and bottom sides of the sheet were exposed to ultraviolet light (UV), and then developed to define the contact characteristics in the photoresist (step 1910, Fig. 21). The area to be etched is not protected by a mask. Using V. Invention Description (25) Shadowing method to limit g-a conductor made of% 1 elements can make the printing of the line have a better definition, similar to those found by half, k. Etching for flakes = etching in a solution for the material selection (step 1 91 2). Etching characteristics 1Γ ^ ^ A special material with a specific etch chemistry can provide the best point for its inflammation rate (speed and extent of liquid etching). The profile of this side wall starts with two. The selected etchant also affects other characteristics, such as the straightness of the characteristics when viewed with the surface commonly used in the industry. In Method 1 900, Ester Chemicals, gasified copper, ferric chloride, hydroxide protection, J < 谩, photoresist 杳 丨 丨 emulsion emulsified sulfur. Qian etched 4 # M f # The protective layer was removed during the stripping process, leaving the h > J feature (step 1914, FIG. 22). According to the original item in step 1906,
貫施例中,士, 性取批开)成工呈。A 格式中,:佳C工具包括複數個球軸承安排在陣Ξ 為不同大小,⑯加不同力於接點上,二球軸承可 性分與同_而知 因而可將不同機只,士 μ ^ 板上之接點。球軸承之曲徑用以# 械特 面推開。運用形成工具於薄片凸緣自薄 :軸中形成’以便在成批方法中產生理相=凸緣可在 驟1 9 1 8 )。 心之接觸元件(步 薄片可加以熱處理以改正由形成方法、皮 施以獲得最佳形成條件之物理㈣。〖寸4熱可予實 W at薄片再予表面處理以改進為隨後之堆聂_ & 性(步驟mi如結合不良,薄片與基“:::;:: 1231621In the examples, the scholars and the applicants were approved for approval. In the A format, the best C tools include a plurality of ball bearings arranged in arrays. They are of different sizes and different forces are applied to the contacts. The two ball bearings can be divided into the same _. Therefore, different machines can be used. ^ Contacts on the board. The diameter of the ball bearing is pushed away with # 机 特 面. Use the forming tool to thin the flanges from the thin: Shafts' to create the physical phase in the batch method = flanges can be used in steps 1 9 1 8). The contact element of the heart (the sheet can be heat-treated to correct the physical properties of the forming method and skin application to obtain the best forming conditions. [Inch 4 heat can be solidified and the W at sheet can be surface treated to improve the subsequent stacking. & Sex (step mi such as poor bonding, thin sheet and base ":::; :: 1231621
五、發明說明(26) 脫離堆疊。可利用數 化物方法。微蝕刻用以^面處理方法,包括微蝕刻及黑氧 表面區域(使表面粗轉另/、之表面上成坑,有效造成較大 未加以適當控制,則把可損几^^同)以改進較佳結合。如微蝕刻 黑氧化物方法為一罟f薄片 中在片之表面產生一 > 換方法,涉及自行限制反應,其 過設定厚度,因而限=上物。在此反應中,氧擴散僅能通 式之粗糙表面,其^故虱之生長量。氧化物有一突起物形 表面處理步驟,何去,、、、"合。彳政蝕刻或黑氧均可使用作 在壓縮之&則為設計之選擇。 元件下面之起:壓劑材料及介電核心以位於凸緣 防止在堆疊程4'=加以處理(步驟1924)。此目的在 動,接點特性將會改變2料之過里流動。如發生此種流 用。 文造成接觸元件不適於電及機械使 以下之表為堆疊壓綸 一安排可以改變以使接觸_王^之/、型疊起(步驟1 926 )。此 之每一層。 使接觸疋件以内部層插入。圖23a疊起 洞 洞 【:一層為頂壓、縮板材料 •-層為隔片材料,彈黃接觸元件上具有起伏 C·第三層為釋放材料,彈簧接觸元件上具有起伏 :成之接觸元件之頂片 層為結合材料,彈簧接觸下方具有起伏洞5. Description of the invention (26) Off-stack. A number method is available. Micro-etching is used for surface treatment methods, including micro-etching and black oxygen surface area (the surface is roughened and / or pits are formed on the surface, which effectively causes large damage without proper control, so it can be damaged several times). Improve the better combination. For example, the micro-etching black oxide method is to produce a > change method on the surface of the flakes in a thin film, which involves limiting the reaction by itself. The thickness is set so that the limit = the upper object. In this reaction, oxygen diffusion can only pass through the rough surface, which is the growth of lice. The oxide has a protrusion-shaped surface treatment step. Where to go? Either political etching or black oxide can be used as a compression & design choice. From the bottom of the component: the compressive material and the dielectric core are located on the flange to prevent it from being processed 4 '= in the stacking process (step 1924). This purpose is moving, and the contact characteristics will change. If such misuse occurs. As a result, the contact elements are not suitable for electrical and mechanical applications. The following table is for stacking laminates. The arrangement can be changed to make the contact _wang ^ // types stacked (step 1 926). Every layer of this. Insert the contact piece with the inner layer. Figure 23a Stacked holes [: One layer is the top pressure and shrink plate material • The layer is the spacer material, the elastic yellow contact element has undulations C. The third layer is the release material, the spring contact element has undulations: Cheng Zhi The top layer of the element is a bonding material, and there are undulating holes under the spring contact
第33頁 1231621Page 33 1231621
五、發明說明(27) 起伏洞 伏洞 伏洞 f第六層為核心介電質,彈簧接觸上及下方具有 g第七層為結合材料,彈簧接觸上方有起伏洞 h ,八層為形成接觸元件之底片 1第九層為釋放材料,彈簧接觸元件之下具有起 J第十層為隔片材料,彈簧接觸元件之下方有起 k第十一層為底部壓縮板材料 下® & f堆豐在結合材料之最佳結合及流動條件溫度條件 驟,,圖2叫。作業期間,頂部及底部接觸牛 除,二電材料上。冷卻之後’堆疊自壓縮板移 下s層4-8之面板(步驟193〇)。 (步驟加以電鍍以電連接頂部及底部凸緣 方、本+ ) 乂驟使頂凸緣與底凸緣電連接係由無電 表面,::t :;成、。*匕方法使有效的沉積傳導材料於頂 在美 貝/5以連接接觸元件之二薄片,之後再沉積 側=$ ^另一側上。電鍍方法建立一電流路徑以自板之一 1只J心至另一側。 案被ίϊ光阻薄膜加在板之二側(步驟1 934)。-圖 定捿^路』衫以限定各別接觸元件(步驟1936)。之後決 件之最後型式,硬金或軟金(步驟1 938)。硬金係 具應用中,其插入數甚大,如測試插座。硬金本身 ’、、以使金更為耐用。軟金為純金故無雜質,典型用 _____ ίΐ |Γ 國圓國 1 liliilli 第34頁 1231621 五、發明說明(28) 於PCB或網路空間’其中插入數甚少。例如,用於之封 包至板插座典型有卜2 0個插入,使用硬金之技術丨〇〜 、 1 0 0 0 0 0個插入。 如完成型式接觸元件為硬金型,則實施部分蝕刻以w 獨化接觸元件(步驟1 940 )。光阻薄膜由伯剝除方法移除早 (步驟1 9 4 2)。光阻劑之一新層加在面板之二側(步驟' 1 944)。前已蝕刻之區域曝露及顯影(步驟1 946 )。面板於 是供以硬金方法作電解Cu/Ni/Au電鏟(步驟1948)。 光阻劑移除後以曝露前已部分钱刻之劃片線(步驟 1 950 )。全面板利用電解質Ni/Au為硬遮罩加以蝕刻,以* 成接觸陣列之完全單獨化(步驟1 95 2)。最後插入器輪廓= 面板路由而出,以分隔面板為個別連接器陣列(步驟阳 1954)。方法於是終止(步驟1956)。 如使用軟金為最後型式(步驟1 938 ),於是使用蝕 完全將接觸元件單獨化(步驟196〇)。光阻劑以剝^ 除(步驟1 9 62 )。無電Ni/Au,亦稱軟金電在面板上以/移 接觸π件(步驟1 964)。最後插入器輪廓自面板路由70 以分離面板為個別接觸器陣列(步驟丨9 5 , , 驟1 956 )。 乃沄終止(步 軟金完工方法在電鍍之前將接觸元件單獨化。 僅電鍍在金屬表面,及提供接觸元件一密 Nl/Au :止接觸元件系統壽命發生之潛在錢,因2為::: 】。電鍍前單獨化為一方式以隔離及密封銅接2 = 屬接觸’導致一清晰影像及清晰接點,其短路趨勢小。’ 第35頁 1231621_ 五、發明說明(29) 精於此技藝人士當瞭解,本發明之連接器可用為内插 器,PCB連接器,或形成一PCB。 本發明之比例性不受限制,因其所用之微影技術及以三維 形成連接器元件之間單工具模,使其易於訂製。 本發明之特殊實施例已顯示及說明如上,精於此技藝 人士可作修改而不致有悖本發明之範圍。上述敘述為說明 目的,不構成本發明之限制。V. Explanation of the invention (27) The undulating hole undulating hole f The sixth layer is the core dielectric, g is above and below the spring contact. The seventh layer is the bonding material, the spring is above the undulating hole h, and the eight layers are forming contact. The bottom layer of the element 1 is the release material. The spring contact element has a layer from the tenth layer as the spacer material. The spring contact element has the layer from the eleventh layer as the bottom compression plate material. The optimal bonding and flow conditions of Feng Zai bonding materials are shown in Figure 2. During operation, the top and bottom are in contact with each other, and on the second electrical material. After cooling ', the stack is removed from the compression plate and the s layer 4-8 panels are removed (step 1930). (The steps are electroplated to electrically connect the top and bottom flanges.) This step makes the electrical connection between the top flange and the bottom flange from a non-electrical surface :: t :; 成,. * The dagger method enables efficient deposition of conductive material on top of the US / 5 to connect the two thin sections of the contact element, and then deposits on the side = $ ^ on the other side. The plating method establishes a current path from one J center of one of the plates to the other side. The case is covered with a photoresist film on both sides of the board (step 1 934). -Draw a shirt to define individual contact elements (step 1936). The final version of the decision, hard or soft gold (step 1 938). In hard gold fixture applications, the number of inserts is very large, such as test sockets. Hard gold itself ', to make gold more durable. Soft gold is pure gold and has no impurities. It is typically used _____ ί Guoyuan 1 liliilli page 34 1231621 V. Description of the invention (28) Inserted into PCB or network space ′ There are very few inserts. For example, the packet-to-board socket used typically has 20 inserts, using hard gold technology 丨 〇 ~, 1 0 0 0 inserts. If the completed contact element is a hard gold type, a partial etch is performed to isolate the contact element (step 1 940). The photoresist film is removed by the primary stripping method (step 1 9 4 2). A new layer of photoresist is added on both sides of the panel (step '1 944). The previously etched area is exposed and developed (step 1 946). The panel is then supplied as an electrolytic Cu / Ni / Au electric shovel by the hard gold method (step 1948). After the photoresist is removed, a scribe line is partially engraved before the exposure (step 1950). The entire panel is etched with electrolyte Ni / Au as a hard mask to completely separate the contact array (step 1 95 2). Final interposer outline = The panel is routed, separating the panels into individual connector arrays (step 1954). The method is then terminated (step 1956). If soft gold is used as the final type (step 1938), then the contact elements are completely separated using etch (step 1960). The photoresist is removed (step 192). The non-electric Ni / Au, also known as soft gold, contacts the π piece on the panel with / moving (step 1 964). Finally, the outline of the inserter is routed from the panel 70 to separate the panel into an array of individual contactors (steps 9 5, 1, 1956). Naaru Termination (Step Soft Gold finish method separates the contact elements before plating. Only plating on metal surfaces, and providing contact elements with a density of Nl / Au: stop the potential life of the contact element system, because 2 is ::: 】. Separate into a way to isolate and seal the copper before electroplating 2 = belong to the contact 'results in a clear image and clear contacts, the short-circuit tendency is small.' Page 35 1231621_ V. Description of the invention (29) Expertise in this technique Persons should understand that the connector of the present invention can be used as an interposer, a PCB connector, or forming a PCB. The proportionality of the present invention is not limited because of the lithography technology used and the three-dimensional formation of the connector components The tool mold makes it easy to customize. The special embodiment of the present invention has been shown and described above. Those skilled in the art can make modifications without departing from the scope of the present invention. The above description is for illustrative purposes and does not constitute a limitation of the present invention. .
第36頁 1231621 圖式簡單說明 圖1為現有接觸元件接觸一基板上之金屬墊。 圖2 a為縣有接觸元件接觸一焊接球。 圖2b,2c為連接一損壞之氦接球至基板之金屬墊之結果 圖3a,3b為本發明之束球格陣列(BBGA)系統放大° 圖,及其接至一電路板(PCB)。 ° 圖3c,3d為用以電連接圖3&之接觸系 計劃之剖面圖。 之二連接 圖3 e為根據圖3 a及3 b所示之實施例之焊接 視圖。 ,之支架結構透Page 36 1231621 Brief Description of Drawings Figure 1 shows a conventional contact element touching a metal pad on a substrate. Figure 2a shows a contact ball with a contact element. Figures 2b and 2c are the results of connecting a damaged helium ball to the metal pad of the substrate. Figures 3a and 3b are enlarged views of the BBGA system of the present invention and its connection to a circuit board (PCB). ° Figures 3c and 3d are cross-sectional views of the contact system plan used to electrically connect Figure 3 & Second connection Fig. 3e is a welding view according to the embodiment shown in Figs. 3a and 3b. , The bracket structure through
圖3f為圖3a之接觸臂陣列平面圖。 圖3g為數個不同接觸臂平面圖。 圖4a為束陸格陣列(BLGA)系統之表面 PCB之剖面圖。 圖4b為BLGA系統可分離型及其連接至一 peg立 圖5為BLGA之接觸陣列之接觸臂之放大剖面之剖面圖。 圖6為不同接觸臂之放大透視圖。 圖。 圖7為本發明一實施例之連接器之透視圖。 圖8為一連接器,包括一利用本發明另丄 > 形成之接觸元件。 ^例多金屬層FIG. 3f is a plan view of the contact arm array of FIG. 3a. Figure 3g is a plan view of several different contact arms. Figure 4a is a cross-sectional view of the surface PCB of a beam land grid array (BLGA) system. Fig. 4b is a separable BLGA system and its connection to a peg stand. Fig. 5 is an enlarged cross-sectional view of a contact arm of a BLGA contact array. FIG. 6 is an enlarged perspective view of different contact arms. Illustration. FIG. 7 is a perspective view of a connector according to an embodiment of the present invention. Fig. 8 is a connector including a contact element formed using the present invention. ^ Example of polymetallic layer
圖9a及9b為本發明另一實施例之連接器之 圖l〇a及l〇b為本發明另一實施例之連接器"=圖。 圖1 1為本發明另一實施例之連接器剖面^之°1】面圖。 圖1 2為本發明另一實施例之連接器剖面圖。 圖13a-13c為用於熱交換作業之一實施例 逯接器之剖面Figs. 9a and 9b are connectors of another embodiment of the present invention. Figs. 10a and 10b are connectors of another embodiment of the present invention. 11 is a cross-sectional view of a connector according to another embodiment of the present invention. FIG. 12 is a cross-sectional view of a connector according to another embodiment of the present invention. Figures 13a-13c are cross-sections of an adaptor used in one embodiment for heat exchange operations
第37頁 1231621 圖式簡單說明 圖。 圖14a-14b顯示本發明之雷%路化速垃 圖1 5 a為本發明另一實施例 器之剖面圖。 器之一杳 [ —貫知例同車由接觸元 之包括一^抑俊觸元件之 圖15b為圖15a之同轴接觫- 接 卞牧项tl件之頂满 圖16顯示經圖15a之連接哭主 、圖0 圖17a-17h顯示本發明一會# 封包至—PCfe 貫施例之圖9 a夕、由,。坂。 理步驟之剖面圖。 之連接器形士 〜成之處 圖18a及18b顯示本發明另_奢 七^ 貫施例之連接 面圖- < 依 器形成 步 之剖 圖19a-19d為流程圖’顯示本發明另一 ♦ 製造方法之步驟。 貝知例之連接器之圖20為圖19a-19d所示之方法中加在彈筈 薄膜之剖面圖。 、才料片上之光随圖21為根據圖19a-19d之方法加在光阻薄而園。 、上之UV光之剖 之接觸元件片之剖面 面圖 圖22為圖19a_19d顯示之方法形成 圖。 圖23a為圖19a-19d之方法中使用一步驟中堆疊之每一异 面圖。 a 圖23b為圖23a之合成之堆疊之側視圖。 剖 元件符號說明:100、50 0、70 0、8 0 0、9 0 0 > 1 0 0 0、11〇〇、1 3 0 0 - 1 400、Page 37 1231621 Brief description of the drawings. Figures 14a-14b show the lightning speed of the invention. Figure 15a is a cross-sectional view of another embodiment of the invention. One of the devices [—The conventional example of the same car consists of a contact element including a contact element. Figure 15b is the coaxial connector of Figure 15a.-The top of the connector is shown in Figure 16. Figure 16 shows Connect the crying master, Figure 0 Figures 17a-17h show the present invention for a while # 包包 至 —PCfe consistent embodiment of Figure 9a Xi, You ,. Saka. Sectional view of the processing steps. Figures 18a and 18b show the connection diagram of another embodiment of the present invention-luxury seven ^ embodiment-< sectional view of the step of forming according to the device 19a-19d is a flowchart 'shows another aspect of the present invention ♦ Manufacturing method steps. Fig. 20 of the known connector is a cross-sectional view of the elastic film added in the method shown in Figs. 19a-19d. The light on the material sheet is added to the photoresistor according to the method of FIGS. 19a-19d according to FIG. Section of UV light on the cross-section of the contact element sheet. Figure 22 is a drawing of the method shown in Figures 19a-19d. Fig. 23a is a cross-sectional view of each of the stacks used in one step in the method of Figs. 19a-19d. a Figure 23b is a side view of the composite stack of Figure 23a. Section Symbol description: 100, 50 0, 70 0, 8 0 0, 9 0 > 1 0 0 0, 1 100, 1 3 0 0-1 400,
第38頁 1231621 圖式簡單說明 1420 、1 5 0 0 連接器 102、 502 、 902 ^1102 、1200 、 1304 、 1306 、 1308 、 1310 、1404 、 1406 、 1424 、 1504 、 ]50 6、1510、'1514 ^ 1710a -1710c 、 1810 接觸元件 104、 210、912 金屬 墊 106、 212 、 914 、 1004 、1024 、 1104 、 1202 、 1700 、 1800 基板 108 薄膜 202 接觸基板 2 0 0、 302 、 320 、 408 焊球 2 0 4 坑洞 300 第一結構 304 模組 306 載體 308 、1 428、1512 通路 312 層 310 彈性接觸臂 316 ^ PCB 電路板 318 電接觸元件 314、 1322 、 1324 、 1332 、 1334 、 1522 、 1524 、 1532 、 1534 墊 400 BLGA電接觸元件 40 0a 可分離型BLGA接觸元件 402 彈簧載體 404 臂陣列 410 接觸墊 412 BLGA接觸電刷 504 相對彈簧部分 702 、802 第一組接觸元件 704、 812 介電基板 706 、804 第二組接觸元件 708 貫穿洞(孔隙) 710 傳導環(環形圖案) 806 第一金屬層 808 第二金屬層 810 介電層 906 基座部分 908 彈簧部分 910 半導體裝置Page 38 1231621 Schematic description of 1420, 1 50 0 connector 102, 502, 902 ^ 1102, 1200, 1304, 1306, 1308, 1310, 1404, 1406, 1424, 1504,] 50 6, 1510, '1514 ^ 1710a -1710c, 1810 contact elements 104, 210, 912 metal pads 106, 212, 914, 1004, 1024, 1104, 1202, 1700, 1800 substrate 108 film 202 contact substrate 2 0 0, 302, 320, 408 solder ball 2 0 4 pothole 300 first structure 304 module 306 carrier 308, 1 428, 1512 pathway 312 layer 310 elastic contact arm 316 ^ PCB circuit board 318 electrical contact element 314, 1322, 1324, 1332, 1334, 1522, 1524, 1532 1534 pad 400 BLGA electrical contact element 40 0a separable BLGA contact element 402 spring carrier 404 arm array 410 contact pad 412 BLGA contact brush 504 opposite spring portion 702, 802 first group of contact element 704, 812 dielectric substrate 706, 804 A second group of contact elements 708 A through hole (void) 710 A conductive ring (ring pattern) 806 A first metal layer 808 A second metal layer 810 Section 910 of the semiconductor layer 908 of the base portion 906 of the spring
第39頁Page 39
1231621 1 Ο Ο 6、11 Ο 6 基座部分 1 02 0 半導體裝置 1 204 基座部分 第一曲線彈簧部分 第二曲線彈簧部分 圖式簡單說明 1 0 0 2 陣列接觸元件 1 0 0 8、1 0 1 0 曲線彈簧部分 1 022 陣列焊球 1108 > 1206 1110 、 1208 1 32 0 LGA 封包 1402、1422 介電基板 1 426 焊球終端 1 502 介電基板 1516 金屬執跡 1530 PC板 1702a-1702c 支撐區域 1704a 、 1704c 區域 1708a-1708c 遮罩區域 1 80 2 預限定電路 1 808 遮罩層 BGA 球格陣列 BLGA 束陸格陣列 1 3 3 0、P C板 印刷電路板 1 4 1 0、1 4 1 2 電組件 1 430、1 432 電子組件 1508 孔隙 1520 LGA 封包 1702、1806 支撐層 1 704 遮罩層 1 70 6 金屬層 1706a-1706c金屬部分 1 8 0 4 頂部金屬部分 LGA 連接袼陣 B B G A 束球格陣列 PGA 銷格陣列1231621 1 Ο Ο 6, 11 Ο 6 Base part 1 02 0 Semiconductor device 1 204 Base part First curve spring part Second curve spring part Schematic description 1 0 0 2 Array contact element 1 0 0 8, 1 0 1 0 Curve spring part 1 022 Array solder ball 1108 > 1206 1110 、 1208 1 32 0 LGA package 1402, 1422 Dielectric substrate 1 426 Solder ball terminal 1 502 Dielectric substrate 1516 Metal track 1530 PC board 1702a-1702c Support area 1704a, 1704c area 1708a-1708c mask area 1 80 2 pre-defined circuit 1 808 mask layer BGA ball grid array BLGA beam land grid array 1 3 3 0, PC board printed circuit board 1 4 1 0, 1 4 1 2 Component 1 430, 1 432 Electronic component 1508 Pore 1520 LGA package 1702, 1806 Support layer 1 704 Masking layer 1 70 6 Metal layer 1706a-1706c Metal part 1 8 0 4 Top metal part LGA connection array BBGA Beam Grid Array PGA Pin grid array
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Claims (1)
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/412,729 US7056131B1 (en) | 2003-04-11 | 2003-04-11 | Contact grid array system |
US46050403A | 2003-06-11 | 2003-06-11 | |
US46049603A | 2003-06-11 | 2003-06-11 | |
US10/460,497 US7113408B2 (en) | 2003-06-11 | 2003-06-11 | Contact grid array formed on a printed circuit board |
US10/460,501 US6916181B2 (en) | 2003-06-11 | 2003-06-11 | Remountable connector for land grid array packages |
US10/731,213 US20050120553A1 (en) | 2003-12-08 | 2003-12-08 | Method for forming MEMS grid array connector |
US10/731,669 US7244125B2 (en) | 2003-12-08 | 2003-12-08 | Connector for making electrical contact at semiconductor scales |
US54791204P | 2004-02-26 | 2004-02-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200427138A TW200427138A (en) | 2004-12-01 |
TWI231621B true TWI231621B (en) | 2005-04-21 |
Family
ID=33304299
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093110155A TWI231621B (en) | 2003-04-11 | 2004-04-12 | Electrical connector and method for making |
Country Status (2)
Country | Link |
---|---|
TW (1) | TWI231621B (en) |
WO (1) | WO2004093252A2 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140020967A (en) | 2011-03-21 | 2014-02-19 | 유니버시티 오브 윈저 | Apparatus for the automated testing and validation of electronic components |
KR101284212B1 (en) | 2012-04-27 | 2013-07-09 | 주식회사 아이에스시 | Test socket which can be aligned easily |
CN105486333B (en) * | 2015-11-19 | 2018-08-24 | 业成光电(深圳)有限公司 | Improve the sensor structure of narrow line-spacing joint sheet pressing dislocation |
CN109792114B (en) * | 2016-09-29 | 2021-05-25 | 3M创新有限公司 | Connector assembly for solderless mounting to a circuit board |
US10128593B1 (en) * | 2017-09-28 | 2018-11-13 | International Business Machines Corporation | Connector having a body with a conductive layer common to top and bottom surfaces of the body as well as to wall surfaces of a plurality of holes in the body |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19713661C1 (en) * | 1997-04-02 | 1998-09-24 | Siemens Nixdorf Inf Syst | Contact arrangement |
-
2004
- 2004-04-09 WO PCT/US2004/011074 patent/WO2004093252A2/en active Application Filing
- 2004-04-12 TW TW093110155A patent/TWI231621B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
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WO2004093252A2 (en) | 2004-10-28 |
TW200427138A (en) | 2004-12-01 |
WO2004093252A3 (en) | 2005-04-28 |
WO2004093252B1 (en) | 2005-07-21 |
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