TWI229392B - Semiconductor molding structure and method thereof - Google Patents

Semiconductor molding structure and method thereof Download PDF

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Publication number
TWI229392B
TWI229392B TW93107387A TW93107387A TWI229392B TW I229392 B TWI229392 B TW I229392B TW 93107387 A TW93107387 A TW 93107387A TW 93107387 A TW93107387 A TW 93107387A TW I229392 B TWI229392 B TW I229392B
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Taiwan
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semiconductor
packaging
scope
patent application
item
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TW93107387A
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Chinese (zh)
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TW200532812A (en
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Sung-Jin Kim
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United Test Ct Inc
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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

A semiconductor package and method thereof are proposed, wherein a chip carrier including a plurality of semiconductor chips arrayed thereon and an encapsulant formed thereon for covering the semiconductor chips is provided. A plurality of package units is respectively defined by the encapsulant covering the semiconductor chips, and at least a pair of adjacent package units is connected by at least a connected portion made by the encapsulant, thereby preventing the semiconductor molding structure from warpage and deformation.

Description

1229392 五、發明說明(1) 【發明所屬之技術領域】 本發明係關於一種半導體模壓製法及其模芦姓 指—種可減少半導體裝置發生翹曲與變形之半=:構,尤 法及其模壓結構。 ¥體模壓製 【先前技術】 一球柵陣列半導體封裝技術是一種先進的半 術,其係如第5圖所示,以基板5丨作為半導體曰豆封骏技 載座,並於其上表面與下表面皆敷設導電跡線曰居5 2之承 j晶片5 2以銲線5 3電性連接該上表面之導電跡^ 4 ’而令 ,其下表面所植入之銲球5 6而將電訊訊號傳送至曰5 4 ’以 猎一形成於其上表面且包覆該晶片52與銲線 ,’並 55保護該封裝件。 3的封裝膠體 此一球栅陣列封裝件5 〇為顧及製法上之成 產需要,一般係以批次方式(Batch Type) 里與量 ^基板條片(Substrate Strip)上以多條袼栅交錯 $表义界線預先定義出複數個矩陣排列的封裝 曰 h P r n . 衣早兀,經過 工乃Q Die Bond)、銲接(Wire Bond)及膠體封驻铉止 驟你 -Π 旭·列衣寻步 •、更’再施予切單(s i n g u 1 a t i ο η)去除相鄰封裝單元間 的連結,以製成第5圖所示之單一半導體封裝件5 〇。 習知上為提升製程效率,並降低膠體封裝之時間與成 本’常如美國專利第5,7 7 6,7 9 8號案所揭示之薄型球栅陣 列(+ Thin Fine BaU Grid Array, TFBGA)半導體封裝件 之核壓方法,如第6圖所示,先於基板1 0 0上形成複數個陣 列式之預定封裝區域(如元件符號1 0 1、1 0 2、1 0 3、1 〇 4、 1229392 五、發明說明(2) 1 〇 5、1 0 6等),各該封裝區域係以環繞周圍之間隙丨〇 7彼此 隔開。其中,该基板1 〇 〇係以基板條片之方式進行封裝製 程,而該基板1 00周圍則形成有攔壩結構丨〇8 (Dam bar), 以令該等預定封裝區域位於該攔壩結構1 〇8之内。然後, 以諸如樹脂(Epoxy)之封裝膠體109覆蓋該攔壩結構1〇8内 之陣列式封裝區域’經模壓作業後封裝位於基板1 〇〇上之 多個封裝區域。其中,由於該攔壩結構1 〇8環繞整個封裝 區域周圍,而可令覆蓋其中之封裝膠體1〇9形成平坦表 面。最後,經硬化製程(Post molding cUring,PMC)以 使樹脂鍵結完成後,在所得封裝件的封裴區域之間隙i 〇 7 處切割封裝膠體109及其下方之基板100,以分割每二封袭 區域,而得到如第5圖所示之個別半導體封裝件。 、 然而,此種習知方法之預定封裝區域係採陣列式排 列’經封裝於整個封裝區域後之封裝膠體1 〇9面積極大, 一般為42.5 mm X 42.5 mm’易於高溫處理之pm c製程後,1229392 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a semiconductor die pressing method and a die-finger finger which can reduce half of warping and deformation of a semiconductor device =: structure, method and die pressing structure. ¥ Phantom Pressing [Previous Technology] A ball grid array semiconductor packaging technology is an advanced technology. As shown in Figure 5, the substrate 5 丨 is used as a semiconductor and is mounted on the top surface of the semiconductor. A conductive trace is laid on both the lower surface and the wafer 5 2, which is located at 5 2, and the conductive trace on the upper surface is electrically connected with a bonding wire 5 3. Therefore, a solder ball 5 6 implanted on the lower surface is provided. The telecommunication signal is transmitted to 5 4 'to hunt for one formed on its upper surface and covering the chip 52 and the bonding wire,' and 55 to protect the package. 3 package colloid This ball grid array package 5 〇 In order to take into account the production requirements of the manufacturing method, generally in batch mode (Batch Type) and the amount of substrate strip (Substrate Strip) staggered $ 表 义 界线 Predefining a plurality of matrix arrayed packages called h P rn. Yi Zaowu, Q Die Bond), welding (Wire Bond) and colloidal seal stop you -Π Xu · Lie Yi Xun Steps •, and further, singuing (singu 1 ati ο η) to remove the connection between adjacent packaging units to make a single semiconductor package 50 shown in Figure 5. Conventionally, in order to improve process efficiency and reduce the time and cost of colloidal packaging, it is often the same as the thin ball grid array (+ Thin Fine BaU Grid Array, TFBGA) disclosed in US Patent No. 5,7 7 6, 7 9 8 As shown in FIG. 6, a method for nuclear pressure of a semiconductor package is formed by forming a plurality of array-type predetermined packaging areas on the substrate 100 (such as component symbols 1 0 1, 1 0 2, 1 0 3, 1 〇4 , 1229392 V. Description of the invention (2) 105, 106, etc.), each of the packaging areas is separated from each other by a gap around the circumference. Among them, the substrate 100 is packaged in the form of a substrate strip, and a dam structure is formed around the substrate 100 so that the predetermined packaging areas are located in the dam structure. Within 1 〇8. Then, an encapsulation gel body 109 such as resin (Epoxy) is used to cover the array-type encapsulation region 'in the dam structure 108. After molding, the encapsulation regions on the substrate 100 are encapsulated. Among them, the dam structure 108 surrounds the entire encapsulation area, so that the encapsulation gel 10 covering it can form a flat surface. Finally, after the hardening process (Post molding cUring, PMC) is performed to complete the resin bonding, the packaging gel 109 and the substrate 100 below it are cut at the gap i 〇7 of the sealing area of the obtained package to divide each of the two packages. By hitting the area, an individual semiconductor package as shown in FIG. 5 is obtained. However, the predetermined encapsulation area of this conventional method is arrayed. The encapsulation gel 10, which is encapsulated in the entire encapsulation area, has a very large area, generally 42.5 mm X 42.5 mm. ,

因封裝膠體1 09與基板1 〇〇之熱膨脹係數不匹配(CTE M i s m a t c h)而產生不同之熱膨脹量,加以該薄型球樹陣歹] 基板1 0 0之厚度較薄,且該封裝膠體1 0 9與基板i 〇 〇間之接 觸面積又極大,導致該封裝件產生如第7圖所示之翹曲 (Warpage)現象,形成製程良率與結構強度上的二大問 題’進而亦將因其平面度不佳而造成切割不易或損及切割 刀具之缺點。 、 。 因此,復有如美國專利第5, 89 7, 334號案所揭示,其 係於第8圖所示之基板條片6 1上建構複數個由封裝線6 3、Different thermal expansion amounts due to the mismatch of the thermal expansion coefficient (CTE M ismatch) of the packaging colloid 1 09 and the substrate 100, and the thin ball tree array is added.] The thickness of the substrate 100 is thinner, and the packaging colloid 1 0 The contact area between 9 and the substrate i 00 is extremely large, which causes the package to produce a warpage phenomenon as shown in FIG. 7, forming two major problems in process yield and structural strength. Poor flatness makes it difficult to cut or damage the cutting tool. ,. Therefore, as disclosed in U.S. Patent No. 5, 89 7, 334, a plurality of packaging lines 6 3 are constructed on the substrate strip 6 1 shown in FIG. 8.

17437聯測.Ptd17437 Joint Test. Ptd

1229392 五、發明說明(3) ^_一一^— (Package Line)劃分出來且相鄰 與連結各相鄰基板單元6 2之基板遠技,方形基板單元6 2、 單元62上接置一晶片65並以銲線66電性連接該基^單元 62,從而可以一對應模具(未圖示)進行模壓製程,該模具 係具有多數個對應於該基板單元6 2位置的模穴,以如第9 圖般將每一基板單元6 2模壓成個別的封裝單元6 7,且相鄰 封裝單元67之封裝膠體68係各自分離,而可大幅降低封f 膠體68與基板條片61間之接觸面積,並藉相鄰封裝單元^ 間之封t膠體6 8空隙6 9釋放熱應力,不致如第7圖般產生 因熱膨脹係數不匹配所致之翹曲現象。 然而,此一模壓製法與模壓結構仍有其他的結構問 題’此係由於前述模壓製程結束後,使用者常需拿持該基 板條片6 1之一端以移動其位置,進行後續搬運或治具轉移 之步驟’俾使完成後續植球、可靠度測試、切割或運送等 程序,此時,由於該基板條片6 1上的封裝單元6 7係各自分 離’故而將如第1 0圖般(令使用者拿持於該基板條片6 右端),使該基板條片61如同一懸臂樑(cant i lever)般受 左端封裝單元67之重力而產生彎曲(Bencji ng)變形現象, 既造成該基板條片6 1長期受力之不良影響,更將導致每一 封裝單元67上之封裝膠體68與晶片65出現龜裂或接合脫落 等情形,大幅影響整體結構之良率。 因此’如何開發一種半導體模壓製法及其模壓結構, 以同時解決前述兩習知問題,既避免因熱膨脹係數不匹配 而出現之結構翹曲,復避免因重力所致之結構變形,實為1229392 V. Description of the invention (3) ^ _ 一一 ^ — (Package Line) Substrate remote technology divided and adjacent to and connected to each adjacent substrate unit 62, square substrate unit 62, and a wafer connected to unit 62 65, and the base unit 62 is electrically connected with the bonding wire 66, so that a corresponding mold (not shown) can be used for the molding process. The mold has a plurality of mold cavities corresponding to the position of the substrate unit 62, so as to 9 As shown in the figure, each substrate unit 62 is molded into an individual packaging unit 67, and the packaging colloids 68 of adjacent packaging units 67 are separately separated, which can greatly reduce the contact area between the sealing f colloid 68 and the substrate strip 61. The thermal stress is released by the sealant colloid 6 8 space 6 9 between the adjacent packaging units ^, so that the warping phenomenon caused by the mismatch of the thermal expansion coefficients does not occur as shown in FIG. 7. However, this molding method and molding structure still have other structural problems. 'This is because after the foregoing molding process, the user often needs to hold one end of the substrate strip 61 to move its position for subsequent transportation or fixtures. The step of transfer 'saves the completion of subsequent ball-planting, reliability testing, cutting or transportation procedures, etc. At this time, since the packaging units 6 7 on the substrate strip 61 are separated from each other', it will be as shown in Figure 10 ( The user is held at the right end of the substrate strip 6), so that the substrate strip 61 is subject to the gravity of the left-end packaging unit 67 like a cant i lever to cause a bending (Bencji ng) deformation phenomenon, which causes the The long-term adverse effects of the substrate strip 61 will cause cracks or peeling of the packaging gel 68 and the chip 65 on each packaging unit 67, which will greatly affect the yield of the overall structure. Therefore, how to develop a semiconductor molding method and a molding structure to solve the two conventional problems at the same time, to avoid structural warping due to mismatched thermal expansion coefficients, and to avoid structural deformation due to gravity.

17437聯測.ptd 第7頁 1229392 五、發明說明(4) 此一領域所迫切待解之課題。 【發明内容】 本發明之主要目的即在提供一種可防止因熱膨脹係數 不匹配而翹曲之半導體模壓製法及其模壓結構。 本發明之另一目的即在提供一種可避免因重力而變形 之半導體模壓製法及其模壓結構。 本發明之再一目的在於提供一種可提升結構強度與良 率之半導體模壓製法及其模壓結構。 為達成上述及其他目的,本發明之半導體模壓製法係 包括下列步驟:製備一承載有複數個半導體晶片之晶片承 載件’並令該半導體晶片與該晶片承載件電性連接,進行 一模壓步驟,以於該晶片承載件上填充一封裝膠體,並形 成複數個分別包覆該半導體晶片的封裝單元,同時,令至 少一組相鄰之二封裝單元間形成由該封裝膠體組成之至少 一連接部;以及進行脫模步驟,以形成一半導體模壓結 構。 本發明所製成之半導體模壓結構則係包括:一晶片承 載件;複數個半導體晶片,係接置於該晶片承載件上並與 其電性連接;一封裝膠體,係填充於該晶片承載件上,以 形成複數個分別包覆該半導體晶片的封裝單元;以及至少 一連接部,係由該封裝膠體所組成,並形成於至少一組相 鄰之二封裝單元間。 前述之連接部係以該封裝膠體填充於該模壓步驟之模 具中的預設連接通道而成形,且該連接部之形狀係為長條17437 联 测 .ptd Page 7 1229392 V. Description of the Invention (4) An urgent problem in this field. SUMMARY OF THE INVENTION The main object of the present invention is to provide a semiconductor molding method and a molding structure which can prevent warping due to mismatch of thermal expansion coefficients. Another object of the present invention is to provide a semiconductor molding method and a molding structure which can avoid deformation due to gravity. Still another object of the present invention is to provide a semiconductor molding method and a molding structure capable of improving the structural strength and yield. In order to achieve the above and other objectives, the semiconductor molding method of the present invention includes the following steps: preparing a wafer carrier carrying a plurality of semiconductor wafers, and electrically connecting the semiconductor wafer and the wafer carrier, and performing a molding step, The chip carrier is filled with a packaging colloid, and a plurality of packaging units respectively covering the semiconductor wafer are formed, and at least one adjacent two packaging units are formed with at least one connection portion composed of the packaging colloid. And performing a demolding step to form a semiconductor mold structure. The semiconductor molded structure made by the present invention includes: a wafer carrier; a plurality of semiconductor wafers connected to the wafer carrier and electrically connected to the wafer carrier; and a packaging gel filled on the wafer carrier. To form a plurality of packaging units respectively covering the semiconductor wafer; and at least one connection portion is composed of the packaging gel and is formed between at least one set of two adjacent packaging units. The aforementioned connecting portion is formed by filling the encapsulating gel into a preset connecting channel in the mold of the molding step, and the shape of the connecting portion is a long strip.

17437聯測.ptd 第8頁 1229392 五、發明說明(5) 狀,而其高度則係低於該封裝單/ > 相鄰之二封裝單元間係均形成;:::3 ;同日寺,每—組 裝單元間隔處則未形成有該連接部,"’而各組間之封 為,所有相鄰之封裝單元間均 :士:者,亦可變更設計 因此,藉由前述之連接;::;有邊連接部。 <牧冲没計,即八 上的封裝單元間均維持著一適當的 7该晶片承载件 所提出之半導體模壓製法及其^1 ’而可令本發明 之功效,既不致因材料敎膨^ 。 X揮穩固整體結構 捭 會丁從㈤舌a … 騰係數不匹配而出現翹曲破 奴,亦不致因重力效應而導致結構 古t 結構強度與製程良率,解決了 ς =,充为提升了 題。 I &知技術所遭逢之兩難問 【實施方式】 以下係藉由特定的具體實施 式,熟習此技藝之人士可由發明之實施方 瞭解本發明之其他優點與…易地 可基於不同觀點與應用,在不二中的各項細節亦 種修飾與變更。 在不f予離本發明之精神下進行各 第1 A、1 B圖係顯示本發明之半制 結構的較佳實施例,首先,黛 、衣法舁其模壓 載件20,兮曰片了 # 弟1A圖所示,提供—晶片承 ::20 α亥曰曰片承載件2〇可為例如薄型球乃1 等預定裁切線定#满叙加口々,心頂疋裁切線,以由該 載區域及最終切qP排列之半導體晶片21之承 割運,其中該半導體晶片m以銲線22與 1229392 五、發明說明(6) 二:牛,之導電跡線電性連接"妾著,進行本發 24文持ΐ ΐ Ϊ ;,、係如圖所示以—特製之上、下模具23、 承載件20,以令每—晶片21與其銲㈣容設 =上旲具23之對應模穴25中,同時,相鄰兩模穴25係配 = : = t同一組的兩模六25間形成兩高度較模穴25 ^,r ΐ ,俾使封裝膠體26自注膠π (未圖示)注 入该杈八25後,該封裝膠體26亦可 的兩連接通道30中。 具兄於相郯兩杈八25間 接著’當所有模穴25與連接通道3〇中灼 裝膠體26後,即進行脫槿牛w 、3〇中句已填充滿该封 半導體裝置兩 -組,且同-組的兩封裝單元4 !門俏、f衣早凡4 1係配置成 上模3連接,該連接部31即為對應於前述 相鄰兩…“ΐ:?;=體26,以令用以包覆 得該連接部31之一…t圖視圖所不’可更清楚見 、又计形狀,其係藉由該模穴25之連接通道 又。、而成兩長條狀且相互間隔一距離的膠體連接部 徨,,,接相鄰兩封裝單元4 1之封裝膠體2 6的中央位置, f该晶片承載件20與所有封裝膠體26間之接觸面積不致 ^7 同時亦可藉該連接部3丨提升相鄰兩封裝單元4丨間之 :士 ’使該晶片承載件2 0兩端之封裝單元4 1不致因其重 而f追該晶片承載件2 〇彎曲變形。 因此’藉由前述揭示於該上模具2 3中之連接通道3 〇設17437 联 测 .ptd Page 8 1229392 V. Description of the invention (5), and its height is lower than the package list / > Between the two adjacent package units are formed; ::: 3; Tongri Temple, The connection part is not formed at the interval of each assembly unit, and the seals between the groups are as follows: All adjacent packaging units are: ±: The design can also be changed. Therefore, by the aforementioned connection; ::; Edge connection. < Machic redemption, that is, a suitable semiconductor die pressing method proposed by the wafer carrier and its ^ 1 'are maintained between the eight packaging units, which can make the effect of the present invention neither cause the material to swell. ^. The structure of X is stable and the overall structure is changed from the tongue a. The warping coefficients do not match, and the structure is not caused by the gravity effect. The structural strength and process yield are resolved. question. The Dilemma Encountered by I & Knowing Technology [Implementation] The following are specific implementations. Those skilled in the art can understand the other advantages of the invention and ... from the perspective of different perspectives and applications. The details in Fuji are also modified and changed. The first A and 1 B drawings are performed without departing from the spirit of the present invention. The first embodiment shows a preferred embodiment of the semi-structure of the present invention. # 弟 1A shown in the figure, provide—wafer bearing :: 20 αHAI said that the chip carrier 20 can be a predetermined cutting line such as a thin ball, etc. # 满 述 加 口 々, 心 顶 疋 Cut line, so that The loading area and the final cut of the qP array of semiconductor wafers 21, where the semiconductor wafers m are welded with bonding wires 22 and 1229392. 5. Description of the invention (6) 2: Electrical connection of the conductive traces of the bull " To carry out this article, hold 24 ΐ ΐ Ϊ ,;, as shown in the figure—special upper and lower molds 23, carrier 20, so that each wafer 21 and its solder joints = upper tool 23 corresponding In the mold cavity 25, at the same time, two adjacent mold cavities 25 are matched =: = t Two mold molds 25 in the same group are formed to have two heights higher than the mold cavity 25 ^, r 俾, so that the encapsulant 26 is self-injected π (not (Illustrated) After being injected into the yoke 25, the encapsulant 26 can also be connected to the two connecting channels 30. The brother Yu Xiangxiang two branches and eighty-five indirectly wrote "When all the mold cavities 25 and the connecting channel 30 are filled with the colloid 26, the removal of the cattle is completed. The 30-sentence sentence has filled the sealed semiconductor device two-group , And the two packaging units of the same group 4! Door Qiao, f Yi Zaofan 4 1 series is configured to be connected to the upper mold 3, the connecting portion 31 is corresponding to the aforementioned two adjacent ... "ΐ:?; = 体 26, In order to cover one of the connecting portions 31... Not shown in the figure, the shape can be more clearly seen, which is connected by the connecting channel of the cavity 25. It is formed into two long strips and The gel joints 徨, which are spaced apart from each other by a distance, are connected to the central positions of the packaging gels 26 of two adjacent packaging units 41, and the contact area between the chip carrier 20 and all the packaging gels 26 is not ^ 7. By using the connecting portion 3, the distance between the two adjacent packaging units 4 is increased, so that the packaging unit 41 at both ends of the wafer carrier 20 will not be bent and deformed by the wafer carrier 20 due to its weight. 'With the aforementioned connection channel 3 〇 disclosed in the upper mold 2 3

17437聯測.ptd 第10頁 1229392 五、發明說明(7) 計,即可令模壓完成之相鄰兩 接部3 1,此日^由於该長條連接 觸面積並不大’故而將不致令 生過大之束缚,而可藉該連接 力,亦不致因該封裝膠體2 6與 不匹配而產生翹曲現象;同時 連接兩相鄰封裝單元4 1,故而 4 1發揮適度的拘束力,以對抗 使其不致因重力而出現彎曲變 的兩大問4 ’並错其結構設計 力控制於一理想適當值,以發 效0 封裝單元41間形成兩長條連 ^ 3 1與該晶片承載件2 〇之接 该封裝膠體2 6於熱膨脹時產 部31之兩側釋放其熱膨脹應 該晶片承載件20間的熱膨脹 ’亦由於該連接部3 1係用以 其仍可對兩端側之封裝單元 名封裝單元之4 1重力效應, 形現象,一舉解決了習知上 而將該封裝單元41間的拘束 揮穩固整體模壓結構的功17437 联 测 .ptd Page 10 1229392 V. Description of the invention (7) It can make the adjacent two joints 31 that are finished by molding, on this day ^ Because the contact area of the strip is not large, so it will not be ordered The bondage is too large, and the connection force can be used to prevent warping due to the mismatch of the packaging colloid 26; At the same time, two adjacent packaging units 4 1 are connected at the same time, so 4 1 exerts moderate restraint to counteract The two big problems that make it not to be bent due to gravity 4 ′ and its structural design force is controlled at an ideal appropriate value, in order to achieve the effect 0 forming two long strips between the packaging unit 41 ^ 3 1 and the wafer carrier 2 〇The joint gel 2 6 releases its thermal expansion on both sides of the production section 31 when thermally expanded. The thermal expansion between the wafer carriers 20 should also be caused by the connection section 31. It is still used for the name of the packaging unit that can still be used on both ends. The gravity effect and shape phenomenon of the package unit 41 solves the problem of the conventional method and the constraint between the package units 41 is used to stabilize the overall molding structure.

前述完成模壓之半導體裝置4 〇可士羽A 進行植球、切割與測試等各步驟後打=製程般,再於 列半導體封裝件,此些知;f 一薄型球栅酵 u只白知製程相同,i卜虛蔣% 再贅述;此外,前述模壓製程中用以包覆哼曰 _The semiconductor device that has been molded as described above 40. Keshiyu A performs ball implantation, cutting, and testing after each step, and the process is like the process, and then listed in the semiconductor package. F A thin ball grid enzyme. The same, I will repeat the details; In addition, the aforementioned molding process is used to cover humming _

本發明所設計之連接部31的封裝膠體26係為Z如氧樹 yEpoxy Resin)之熱固性樹脂或聚碳酸醋 _The encapsulating colloid 26 of the connecting portion 31 designed in the present invention is a thermosetting resin or polycarbonate such as Z (such as oxyepoxy resin).

Est.er)、丙烯酸樹脂、聚氯化甲 ycaybonat )樹脂材料之熱塑性樹脂,作立 ♦知/(Pobeste 限4ϊ:: ΓΓ體模壓製法及其模壓結構並非僅 之連接::第3A圖所示,變更該上模具2 間岣形成有、車2 f v母—對應於晶片2 1之相鄰模穴2 成有連接通道30,並使該模穴25與連接通道3〇均於Est.er), acrylic resin, and polymethyl chloride ycaybonat) thermoplastic resins, as well as (Pobeste limit 4ϊ :: ΓΓ phantom compression method and its molding structure are not only connected :: shown in Figure 3A , Change the upper mold 2 to form a car 2 fv mother—the adjacent mold cavity 2 corresponding to the wafer 21 has a connection channel 30, and the mold cavity 25 and the connection channel 30 are both

第11頁 1229392 五、發明說明(8) 模壓製程中填充滿封裝膠體2 6,而可如第3 B圖般於脫模步 驟後,令所有封裝單元4 1間均形成相互連接且由該封裝膠 體2 6組成之連接部3 1,因此,該晶片承載件2 0上之封裝膠 體2 6均將一體成型而包覆每一晶片2 1,且由於該連接部3 1 係如第4圖之上視圖所示為兩長條狀且相互間隔一距離的 封裝膠體2 6,故而將不致令該一體成型之封裝膠體2 6接觸 該晶片承載件2 0過大之面積,而可如前述實施例般,使每 一封裝單元4 1間皆維持一適當的拘束力,防止該模壓結構 因熱膨脹係數不匹配與重力所致的翹曲變形現象,發揮穩 定結構之功效。 綜上所述,本發明所提出之半導體模壓製法及其模壓 結構,確可藉其連接部之設計,發揮穩固整體結構之功 效,既不致因材料熱膨脹係數不匹配而出現翹曲破壞,亦 不致因重力效應而導致結構彎曲變形,充分提升了結構強 度與製程良率,解決了習知技術所遭逢之問題。 以上所述者僅係用以說明本發明之具體實例而已,並 非用以限定本發明之可實施範圍,舉凡熟習該項技術者在 未脫離本發明所揭示之精神與技術思想下所完成之一切等 效修飾或改變,仍應由後述之申請專利範圍所涵蓋。Page 111229392 V. Description of the invention (8) The molding compound is filled with the packaging colloid 26, and after the demolding step as shown in Figure 3B, all the packaging units 41 can be connected to each other and the packaging can be formed by the packaging. The connection portion 31 composed of the gel body 26 is, therefore, the packaging gel body 2 6 on the wafer carrier 20 will be integrally formed to cover each wafer 21, and since the connection portion 3 1 is as shown in FIG. 4 The top view shows two long strips of packaging gel 26 which are spaced apart from each other, so that the integrally formed packaging gel 26 will not contact the wafer carrier 20 with an excessively large area, but can be as in the previous embodiment. In order to maintain a proper binding force between each of the packaging units 41, warping and deformation of the molded structure due to mismatch of thermal expansion coefficient and gravity, and play a role in stabilizing the structure. In summary, the semiconductor molding method and the molding structure proposed by the present invention can indeed play a role in stabilizing the overall structure by the design of the connection portion, which will not cause warpage damage due to the mismatch of the thermal expansion coefficients of the materials, nor will it cause damage. The bending deformation of the structure due to the effect of gravity fully improves the strength of the structure and the yield of the process, and solves the problems encountered in the conventional technology. The above are only used to explain specific examples of the present invention, and are not intended to limit the implementable scope of the present invention. For example, those who are familiar with the technology can do all without departing from the spirit and technical ideas disclosed by the present invention. Equivalent modifications or changes shall still be covered by the scope of patent application mentioned later.

17437聯測.ptd 第12頁 1229392 圖式簡單說明 【圖式簡單說明】: 第1 A及1 B圖係本發明所提出之半導體模壓製法及其模 壓結構的較佳實施例示意圖; 第2圖係第1 B圖所示之模壓結構的上視圖; 第3A及3B圖係本發明所提出之半導體模壓製法及其模 壓結構的另一實施例示意圖; 第4圖係第3 B圖所示之模壓結構的上視圖; 第5圖係球柵陣列半導體封裝件之剖視圖; 第6圖係習知基板之上視圖; 第7圖係第6圖所示之基板於模壓製程後產生翹曲之剖 視圖, 第8圖係另一習知基板條片之上視圖; 第9圖係第8圖所示之基板於模壓製程後之剖視圖;以 及 第1 0圖為第8圖所示之基板於模壓製程後產生彎曲變 形之剖視圖。 100 基 板 101 預 定 封 裝 區 域 102 預 定 封 裝 區 域 103 預 定 封 裝 區 域 104 預 定 封 裝 域 105 預 定 封 裝 區 域 106 預 定 封 裝 域 107 間 隙 108 攔 壩 結 構 109 封 裝 膠 體 20 晶 片 承 載 件 21 晶 片 22 銲 線 23 上 模 具17437 联 测 .ptd Page 12 1229392 Brief description of the drawings [Simplified description of the drawings]: Figures 1 A and 1 B are schematic diagrams of the preferred embodiment of the semiconductor molding method and the molding structure proposed by the present invention; Figure 2 It is a top view of the molded structure shown in Figure 1B; Figures 3A and 3B are schematic diagrams of another embodiment of the semiconductor molding method and the molded structure proposed by the present invention; Figure 4 is shown in Figure 3B Top view of the molded structure; Figure 5 is a sectional view of a ball grid array semiconductor package; Figure 6 is a top view of a conventional substrate; Figure 7 is a sectional view of the substrate shown in Figure 6 after the molding process is warped FIG. 8 is a top view of another conventional substrate strip; FIG. 9 is a cross-sectional view of the substrate shown in FIG. 8 after the molding process; and FIG. 10 is a view of the substrate shown in FIG. 8 during the molding process. A cross-sectional view of bending deformation. 100 Base board 101 Pre-defined packaging area 102 Pre-defined packaging area 103 Pre-defined packaging area 104 Pre-defined packaging area 105 Pre-defined packaging area 106 Pre-defined packaging area 107 Gap 108 Dam structure 109 Packing colloid 20 Wafer carrier 23 Loading 21

17437聯測.ptd 第13頁 122939217437 joint test.ptd page 13 1229392

圖式簡單說明 24 下模具 25 模穴 26 封裝膠 體 30 連接通道 31 連接部 40 半導體裝置 41 封裝單 元 50 球栅陣列封 51 基板 52 晶片 53 銲線 54 導電跡線層 55 封裝膠 體 56 鲜球 61 基板條片 62 基板單元 63 封裝線 64 基板連接部 65 晶片 66 銲線 67 封裝單 元 68 封裝膠體 69 空隙 17437聯測.ptd 第14頁Brief description of the drawing 24 Lower mold 25 Mold cavity 26 Encapsulation gel 30 Connection channel 31 Connection portion 40 Semiconductor device 41 Encapsulation unit 50 Ball grid array seal 51 Substrate 52 Wafer 53 Welding wire 54 Conductive trace layer 55 Encapsulation gel 56 Fresh ball 61 Substrate Strip 62 Substrate unit 63 Encapsulation line 64 Substrate connection part 65 Wafer 66 Bonding wire 67 Encapsulation unit 68 Encapsulation gel 69 Gap 17437 Joint test. Ptd Page 14

Claims (1)

1229392 六、申請專利範圍 1. 一種半導體模壓製法,係包括以下步驟: 製備一承載有複數個半導體晶片之晶片承載件, 並令該半導體晶片與該晶片承載件電性連接; 進行一模壓步驟,以於該晶片承載件上填充一封 裝膠體,並形成複數個分別包覆該半導體晶片的封裝 單元,同時,令至少一組相鄰之二封裝單元間形成由 該封裝膠體組成之至少一連接部;以及 進行脫模步驟,以形成一半導體模壓結構。 2. 如申請專利範圍第1項之半導體模壓製法,其中,該連 接部係以該封裝膠體填充於該模壓步驟之模具中的預 設連接通道而成形。 3. 如申請專利範圍第1項之半導體模壓製法,其中,相鄰 之封裝單元間係形成有兩相互間隔一距離的連接部。 4. 如申請專利範圍第1項之半導體模壓製法,其中,該連 接部之形狀係為長條狀。 5. 如申請專利範圍第1項之半導體模壓製法,其中,該連 接部之高度係低於該封裝單元之高度。 6. 如申請專利範圍第1項之半導體模壓製法,其中,每一 組相鄰之二封裝單元間均形成有該連接部,而各組間 之封裝單元間隔處則未形成有該連接部。 7. 如申請專利範圍第1項之半導體模壓製法,其中,所有 相鄰之封裝單元間係均形成有該連接部。 8. 如申請專利範圍第1項之半導體模壓製法,其中,該晶 片承載件係為薄型球栅陣列基板。1229392 6. Scope of patent application 1. A semiconductor molding method includes the following steps: preparing a wafer carrier carrying a plurality of semiconductor wafers, and electrically connecting the semiconductor wafer with the wafer carrier; performing a molding step, The chip carrier is filled with a packaging colloid, and a plurality of packaging units respectively covering the semiconductor wafer are formed, and at least one adjacent two packaging units are formed with at least one connection portion composed of the packaging colloid. And performing a demolding step to form a semiconductor mold structure. 2. The semiconductor molding method according to item 1 of the patent application scope, wherein the connection portion is formed by filling the packaging gel in a preset connection channel in a mold of the molding step. 3. The semiconductor molding method according to item 1 of the scope of patent application, wherein two adjacent packaging units are formed with two connecting portions spaced apart from each other by a distance. 4. For the semiconductor molding method according to item 1 of the patent application scope, wherein the shape of the connecting portion is a long shape. 5. For the semiconductor molding method according to item 1 of the application, wherein the height of the connection portion is lower than the height of the packaging unit. 6. For example, the semiconductor molding method of the scope of the patent application, wherein the connection portion is formed between two adjacent packaging units of each group, and the connection portion is not formed at the packaging unit interval between the groups. 7. The semiconductor molding method according to item 1 of the patent application scope, wherein the connection portion is formed between all adjacent packaging units. 8. The semiconductor die-pressing method according to item 1 of the application, wherein the wafer carrier is a thin ball grid array substrate. 17437聯測.ptd 第15頁 1229392 六、申請專利範圍 9.如申請專利範圍第1項之半導體模壓製法,其中,於該 晶片承載件上係形成有多條格栅狀交錯之預定裁切 線,以由該等預定裁切線定義出每一封裝單元。 1 0 .如申請專利範圍第1項之半導體模壓製法,其中,該半 導體晶片係以鮮線而與該晶片承載件電性連接。 11. 一種半導體模壓結構,係包括: 晶片承載件, 複數個半導體晶片,係接置於該晶片承載件上並 與其電性連接; 封裝膠體,係填充於該晶片承載件上,以形成複 數個分別包覆該半導體晶片的封裝單元;以及 至少一連接部,係由該封裝膠體所組成,並形成 於至少一組相鄰之二封裝單元間。 1 2 .如申請專利範圍第1 1項之半導體模壓結構,其中,相 鄰之封裝單元間係形成有兩相互間隔一距離的連接 部° 1 3 .如申請專利範圍第1 1項之半導體模壓結構,其中,該 連接部之形狀係為長條狀。 1 4 .如申請專利範圍第1 1項之半導體模壓結構,其中,該 連接部之高度係低於該封裝單元之高度。 1 5 .如申請專利範圍第1 1項之半導體模壓結構,其中,每 一組相鄰之二封裝單元間均形成有該連接部,而各組 間之封裝單元間隔處則未形成有該連接部。 1 6 ,如申請專利範圍第1 1項之半導體模壓結構,其中,所17437 联 测 .ptd Page 15 1229392 6. Application for Patent Scope 9. For example, the semiconductor die pressing method of the scope of application for patent No. 1, wherein a plurality of grid-like staggered predetermined cutting lines are formed on the wafer carrier, Each packaging unit is defined by the predetermined cutting lines. 10. The semiconductor molding method according to item 1 of the scope of patent application, wherein the semiconductor wafer is electrically connected to the wafer carrier with a fresh wire. 11. A semiconductor molding structure, comprising: a wafer carrier, a plurality of semiconductor wafers connected to the wafer carrier and electrically connected to the wafer carrier; and a packaging gel filled in the wafer carrier to form a plurality of wafers. The packaging units respectively covering the semiconductor wafer; and at least one connection portion are composed of the packaging gel and are formed between at least one adjacent two packaging units. 1 2. As in the semiconductor mold structure of item 11 in the scope of patent application, wherein adjacent packaging units are formed with two connecting portions spaced apart from each other by a distance ° 1 3. As in semiconductor mold structure in the area of patent application 11 The structure, wherein the shape of the connecting portion is a long shape. 14. The semiconductor molded structure according to item 11 of the scope of patent application, wherein the height of the connecting portion is lower than the height of the packaging unit. 1 5. According to the semiconductor molded structure of item 11 in the scope of patent application, wherein the connection portion is formed between two adjacent packaging units of each group, and the connection is not formed at the packaging unit interval between each group. unit. 16. The semiconductor mold structure according to item 11 of the patent application scope, wherein 17437聯測.ptd 第16頁 1229392 六、申請專利範圍 有相鄰之封裝單元間係均形成有該連接部。 1 7 .如申請專利範圍第1 1項之半導體模壓結構,其中,該 晶片承載件係為薄型球栅陣列基板。 1 8 .如申請專利範圍第1 1項之半導體模壓結構,其中,於 該晶片承載件上係形成有多條格柵狀交錯之預定裁切 線,以由該等預定裁切線定義出每一封裝單元。 1 9 .如申請專利範圍第1 1項之半導體模壓結構,其中,該 半導體晶片係以銲線而與該晶片承載件電性連接。17437 联 测 .ptd Page 16 1229392 6. Scope of patent application The connection part is formed between adjacent packaging units. 17. The semiconductor molded structure according to item 11 of the scope of patent application, wherein the wafer carrier is a thin ball grid array substrate. 18. The semiconductor molded structure according to item 11 of the scope of patent application, wherein a plurality of grid-like staggered predetermined cutting lines are formed on the wafer carrier, so that each package is defined by the predetermined cutting lines. unit. 19. The semiconductor molded structure according to item 11 of the scope of patent application, wherein the semiconductor wafer is electrically connected to the wafer carrier by a bonding wire. 17437聯測.ptd 第17頁17437 Joint Test.ptd Page 17
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