TWI229375B - Manufacturing method for distributing contacting parts of a semiconductor integrated component - Google Patents

Abstract

The invention relates to a method for contacting parts of a component integrated into a semiconductor substrate. According to the inventive method, a first contact hole is produced in an insulating layer, said contact hole being then filled with contact material and connected to a line. The aim of the invention is to minimize the processes required for contacting parts of a component integrated into a semiconductor substrate. To achieve the aim, the hard mask used to produce the contact hole is also used to structure the line.

Description

1229375

Five 'invention description (1) _ The present invention is a method for making contact with the whole human domain, f: several regions of the component in the cold body substrate-on the semiconductor substrate: one or two includes the following steps : The first contact hole of the contact material is in the edge V and is filled with one inside to form the first channel connection mask. The opening is set in the hard mask, and the hole for the Shu hole leads to the insulation layer. Open-etch the first via contact hole to the contact surface until it touches the first contact material to be contacted and fill the first via contact hole to form the first one connected to the contact material in a circuit layer line. Component connection :::: The component in the f-body substrate has several areas that must be connected with other elements by touching y. The method proposed by SV 0 0 5 3 4 6 7 A1 is to form a contact by filling a conductive / virtual / k / k contact hole. On the other side of this conductive material, one or more wiring layers are connected. The element mentioned earlier is a semiconductor element (for example, dram is recorded by the gate emperor. This type of element has a gate layer on a semiconductor substrate that acts as a pole fish: ^ Stack, and gate dielectric materials that separate (electrically-insulated) the gate / thousand-conductor substrate. The surface of Γ is the gate layer stack (CG contact). The contact is used as a connection. In order to make contact with the layer stack, it must be 7 ·: the first insulating layer (such as nitrogen

1229375 _ ^ m_j211734〇 5. Description of the invention (2)

Amend

Part of the insulating layer made of metal). A nitride is a suitable material for constituting such an insulating layer. Next, it is necessary to contact the surface of the semiconductor substrate in the source / drain region, and set a contact for connection to a bit line (CB contact) at this position. In addition, a contact with another diffusion region (CD contact) is set, and this contact also contacts the surface of the semiconductor substrate at the same time.

As described in German Patent Registration 1 0 1 2 7 8 8 8.8, contact can be made by a fine-light etched structured hard mask (such as mask 2 made of polycrystalline silicon). The steps are first An insulation layer (such as a TEOS layer) is provided on the semiconductor substrate so as to be disposed on top of the insulation layer ^! The bulk structure is separated from the semiconductor elements and conductors (electrically insulated). Next, the ^ A hard mask, the hard mask itself has openings for the via contact holes to be created. Y, will then avoid all contact holes on the surface that are not in contact with the CD to form the next via contact holes, such as According to DE 1 0 0 53 4 6 7 A1, the first method of manufacturing a hard mask is to deposit the material of the hard mask in a continuous layer. In order to structure this hard mask layer, then There are ^ photoresist layers on this hard mask curtain layer, and then this photoresist layer is exposed, leaving ^ a layer of area for the via contact holes to be exposed. After etching, these can be formed and then insulated. Dew empty area. After that, the nitride layer is selectively etched. The area covered by the nitride layer is opened, and the via contact hole is opened. During a photo-etching process, the CB contact, the LD contact, and the photoresist are used to fill and cover the CD contact. Bee contact

Page 6 1229375 Amendment ____ Case No. 92117340 _____ Year V. Description of the invention (3) The hood of the hole is kept open. Then, the insulating layer (such as a nitride layer) on the gate (ie, the layer stack) is removed by a face-etching step. After the via contact holes are structured, there is no layer inside them for subsequent chemical separation and filled with a suitable conductive material (such as tungsten). These conductive materials, the liner on top of the conductive materials, and the hard mask are then removed. For example, dry etching, wet etching, or CMP (chemical mechanical polishing) are suitable removal methods. Other circuit layers can then be made, but this requires the use of another hard film, so the disadvantage of this method is that an additional etching step is required to remove the hard mask. The object of the present invention is to minimize the operational complexity of making contact with several regions of a component integrated in a semiconductor substrate. To this end, the method proposed by the present invention is to perform the following steps before filling the contact material into the first through contact hole (4): filling an anti-reflective coating (ARC) material into the first via connection An anti-reflection coating hole is set on the surface of the hard mask curtain, ^ ^ ^ ^ ^ (ARC) Ji 4 # Λ A (ARC) 1 mask,,,, strategy, and deconstructed photoresist ^ As soon as the hard-resistant part of the underside that is not covered by the photoresist mask is removed, the ARC part and its unreacted photoresist as a line trench are removed to touch As far as the circuit layer is concerned, the insulation layer portion of the spoon is to remove the ARC material in the first via contact hole.

1229375

-^ 92117340 V. Explanation of the invention (4) Then fill the contact material into the first one, and then touch the contact material and the hard cover first contact hole and the top surface of the circuit trench. It is removed from the bottom to w, so 7 1 ^^ Zhi touches the insulation, then fills the contact material with the first _, and finally the contact material and the hard cover l the contact hole and the circuit trench. ^ On the surface. The rhyme is engraved to at least touch the insulation layer. In the method proposed in the present invention, the first via contact hole is structured, and the hard cover can not only be used as a circuit. Therefore, it is not necessary to remove the hard mask step as the structure of the existing I-y circuit. It is necessary to perform one more anti-reflection coating (ARCm / abruptly remove the photoresist mask and remove #column BE W f A from the method of the present invention). Xuan I shows 9 ticks After the structure of the circuit structure is completed, this machine is the third one to remove the photoresist mask from the hard mask. The photoresist military curtain is removed together with the hard mask. The timing of the second offense is to remove the photoresist mask and the engraved mask. / 疋 Before removing the hard mask, the light method is recommended. The method is recommended to use the mask. The reason is that this kind of material mask的 The operation complexity in the process made of polycrystalline silicon is relatively low. Shi Xi) The mask made in the apparatus of the present invention is one of the methods of the present invention structured by an oblique etching profile. In the embodiment of the embodiment, the oblique etching section of the hard mask can be structured as a k-channel contact hole. Compared to

Page 8 1229375 Case No. 92117341 Amendment V. Description of the invention (5) The advantage of using an oblique cut section is the "inclination angle" formed by that surface, which presents a line that is biased toward the upper edge. The spleen of the marginal layer =-It is also possible to use the tilt angle effect of this oblique etching profile to adjust the degree of adjustment relatively small. If this method is not used, oblique = /, the target is subjected to a more complicated and difficult photo-etching step (i.e., tungsten) —RIE, the line is taken from 2 to 4 ;: The more complex% w Bing Qi is used to replace the commonly used tungsten with a pair of corrugated green = to achieve the purpose of reducing the width of the line. Using the tilted carved profile—line-ΠΓ is achieved in a relatively simple way. The purpose of reducing the width of the circuit is to improve the parameters of the semiconductor device: smaller, so that the structure can be structured. A favorable option is to use a dry etching method to make the hard mask SF6, HBr, and / or He / 〇 Citronella can be used as an engraving gas, and it can be engraved or straight-etched according to the type of the engraved gas used. 禋 颏 Determine the use of oblique etching to avoid chemical contact between different materials. Z 1 ^ is filled into the contact surface of the material. Only ® glazing> a layer of lining (T i) or titanium nitride (τ 丨 N) can be used as the method of the present invention. The material of the lining. Another contact material that implements the present invention. Polishing method ^ remove_ except for contact material and hard cover, the method is CMP method (chemical machinery usually has several & domain and Semiconductor substrate 1229375 Case No. 92117340 V. Description of the invention (6) Contact, such as metal oxide electrode. Therefore, it should be connected to form the first through to the second via contact hole to be connected to the first via. The first possible the way

The second material separated by the circuit in another special crystal needs to be a structural layer: in the physical layer and in contact, at the same time, the first covering the auxiliary material path is connected to the second if possible (electrically insulated) and connected to the first layer. Lines. There are two possible ways. In the outer layer of the circuit, the semiconductors in the layer stack to be electrically covered are covered with selective contact holes vias; then the contact holes are removed and the vias are removed. Fold composition. The cover layer on the surface of the substrate is structured so that the etching leading to the gate will engraving the contact hole or the cover layer; finally, as before, the contact hole phase has shown that the source of the external body = MOS (MOS) transistor and no: : Road contact hole The same way as the second via contact hole on the surface.乂 There are two possible ways and the outer shape is inside the insulation layer. ^ Electric Nu two recitations ^: 2 contact materials inside the contact hole of the first dining path. The second contact is to make the second path contact with the second Conductor connections. Among the contacts and the contacts, the polar contacts are in the memory cells. Bucket H ^ ^ Ί Pushing down the gate is usually set by having + if at least? The special pendulum layer stacking method; for the two: f question "the third path of the polar emulsion layer is connected as the first, the contact hole of the path or the first and i to the overlay layer, and then use the downward Money carved to the interlayer oxide layer,

The coating (ARC) material makes contact with the third 通路 1 path or the same processing step. & Brother passed, the third path contacts the electrical connection. There are two

Page 10 1229375 Description of the five inventions⑺ Case No. 92117340

Correct the brother-a possible way is to form a hole in the insulating layer or a hole in the layer: the brother and the second line are separated (the third line connected by the contact material of the electrical insulation 3. ^ 乐 料 在^, A possible way is to connect the third via ^ the outer circuit layer is connected to the third conductor J hole material, a favorable way is to use the photoresist as the aforementioned coating is less advantageous The method is to set (ARC) under the photoresist in order to make the photoresist removal method work. The following will be described in the order of Fig. 1 to Fig. 11 as shown in Fig. 1 of this i. The insulating layer (2) is made of a solid layer: a hard-type curtain made of polycrystalline stone (7: engraved) / 2 pictures, followed by CT light "(contact to the first One, s means that in this photo-etching step a zigzag via contact hole (4), a second main contact forming a cD contact, and a third via contact forming a CG contact (6: A photoresist mask (7) is exposed. As shown in the issue, after the development is completed, the substrate is hardened by a dry etching step. Turn on 'The etching gas used in this dry etching step can be C12, and / or He / 〇2. Using these etching gases or a mixture of these gases can ensure that the optional last name of the insulation can be avoided.' And the Auxiliary materials of the contact material inside the wire-to-channel contact are easy to reflect. &Amp; A square hole is placed in the insulation layer after the insulation. The phototransistor & CB contact L road contact hole. To this end, first 'To be photoresist-type mask (3) SF6, HBr, & (2) for gas engraving 1229375 case number 92117340, description of the invention (8) depending on the dry etching method used can be determined in Hard = oblique etched profile or straight etched profile. The above ^ is used in the thickness of the Di photoresist mask and the thickness of the hard mask and the hard mask. = = C) The thickness can be queued after t. The person begins to etch the hard mask (3). Similarly, this is done by using other chemical etching methods. Of course, θ ARC). The exposed area of the insulating layer (2) is combined with a tilt == two reflective coatings It ’s the so-called Taper: —end into a cone; ^ 余 刻 边 (The size of the via contact hole is also small as explained on the ^ surface. This is what I do now: the #step is to remove the photoresist cover * ⑺. As shown in the form, 1 act ⑺ It does not cause any adverse effects. It does not affect the first contact 问: The function of the contact hole (6) is to form a CG contact. A layer stack ® (9) and a nitride on it The layer (1 0) constitutes the first price. Firstly, because of the engraving (contact to the transistor name)-the hole (4) and the nitride are etched, so only the first via is connected to the 3 contact crystal :; the via contact hole (5) will be opened. Engraving (contact to engraving) ^ followed by CG light money engraving (the first contacting to the closed electrode ^ a kind of auxiliary material (11) composed of photoresist will cover it.) :::: contact hole ⑷ and the second via contact hole (5) is filled and covered by the user-a kind of remaining method that will not selectively avoid the gas ^

1229375 ~ Case No. 9211 ^ 0 V. Description of the invention (9) Revised _ month nitride layer Γ〗 η τ & As shown in the figure, ^ 一 ^ is drawn to the gate oxide layer (9), which is as follows The sixth via contact hole (6) opens to the gate oxide layer ㈠). After removing the auxiliary material (1 1) of the photoresist layer A made of photoresist, fill it with anti-reflection 5, core R:):! :: 2) and contact the first, second, and third via holes (4, surface On the top surface, there is a complex structure; the car stays open / j is held in (13) of the anti-reflective coating (ARC) material (12). The second photoresist cover of the ir ^ t circuit structure is hardened and the I type is shown in FIG. As shown in the figure, a second photoresist mask (13 > m) is used. This step is based on an age-six, bismuth coating with "㈧ ... Appear =: The cover layer is opened. For the ^ (ARC) holding structure (F ^) "structure, you can use) (12) to perform another Recess processing step. Method, example ^ Hard type for polycrystalline The appropriate dry type chemical etching method of the mask (3) using s F as an etching gas can form a slanted etching profile within the bucket. Depending on the etching process and the hard nf% curtain, different shapes can be formed on the cross section. This method can drastically reduce the width of the line to be formed. Because there is nothing (no inclined etching profile), this etching method can be used to align the etching method (without using a hard cover) (Curve) smaller circuit width. It is shown that another possible method to reduce the circuit width is to coat the layer (ARC) material with a suitable etching material when the cover layer formed by the 2 ° (ARC) material (12). (12) Sculpt the sloping edge (also called Taper: the end tapers and tapers) on the money, so that it can be shaped: the line groove (14), and then reduce the line to be formed 〇

Page 13 1229375-T 'Case No. 92117340 V. Description of the invention (10) Next, the circuit trench (1 4) is etched to the circuit layer (1 5) with a second photoresist mask (1 3). After the structuring of the line trench (1 4) is completed, the second photoresist mask (1 3) is removed. During this etching process, the nitride layer (1 0) of the gate (8) is protected by the anti-reflection coating (A R c) material (1 2). As shown in Fig. 10, after the line trench (4) is formed, a layer of titanium nitride (TiN) or titanium 7 titanium nitride road trench (14) is deposited in the line trench portion. 々 mourning materials 枓 (16)

As shown in Fig. 11, a two-step method (chemical mechanical polishing method) is performed next. First, a tungsten-CMP method of tungsten-CMP and a tungsten-CMP method (chemical mechanical polishing method) was performed. This step, that is, the hard mask __CMP method (remove the hard mask (3) by the chemist Jin Yiyi. Because of this alchemy polishing method), the process in the standard machine method (chemical mechanical polishing method) The Chinese style [3 requires an additional step to remove the hard cover. Alas, so not

Page 14 1229375 _Case No. 92117340_Year Month Day__ Brief Description of Drawings Figure 1 ·· Sectional view of the semiconductor substrate after the installation of the insulating layer and the hard mask. Figure 2: A cross-sectional view of the semiconductor substrate after the first photoresist mask has been exposed and developed. Figure 3: A cross-sectional view of a semiconductor substrate after the first structuring of the hard mask. Figure 4: A cross-sectional view of the semiconductor substrate after the first and second via contact holes are formed through an etching step. Figure 5: A cross-sectional view of the semiconductor substrate after the setting of the auxiliary layer is completed. Fig. 6: A cross-sectional view of a semiconductor substrate after forming a third via contact hole. _ Figure 7 ·· Sectional view of the completion of the anti-reflection coating (ARC) setup and the semiconductor substrate with a structured second photoresist mask. Figure 8: A cross-sectional view of the semiconductor substrate after completing the structuring step of the second photoresist mask. Figure 9: A cross-sectional view of the semiconductor substrate after the insulating layer is etched down to touch the wiring layer. Figure 10 · A cross-sectional view of the semiconductor substrate after the step of filling the contact material is completed. Figure 11: A cross-sectional view of the semiconductor substrate after removing the contact material and the hard cover downward to reach the surface b of the insulating layer. Component symbol description:

Page 15 1229375 Case No. 92117340 Revised diagrams Brief description I Semiconductor substrate 3 Hard mask 5 Second via contact hole 7 First photoresist mask 9 Gate oxide layer II Photoresist Auxiliary material 12 Anti-reflection coating (ARC) material 1 5, 1 6 Contact material 2 Insulating layer 4 First via contact hole 6 Third via contact hole 8 Gate 10 Nitride layer 14 Circuit layer 13 Second light Scoring

Page 16

Claims (1)

1229375 Case No. 92Π7340 6. Scope of Patent Application 1. A method of contacting with a semiconductor substrate integrated. This method includes the following, generating several areas of the component-setting on the semiconductor substrate (1) ~ ·· Fill the first field% insulating layer (2) 'of the contact material (1 6) and form the first contact from the inside. The road contact hole (4) is in the insulating layer (2)-in the insulating layer ( 2) A hard part is provided, an inner part is provided in (3) as an opening for forming the third part, and the hard cover insulation layer (2) is opened, and the contact hole (4) is used to lead to the first one The via contact hole (4) reaches the contact surface and is engraved until it touches the first to be contacted--fill the contact material (16) into the first via--to form and connect (4) in a circuit layer. The first line connected by the contact material 枓 (16). Among them: the following steps are filled in the contact material in line _, advanced before the contact hole (4)-an anti-reflection coating (ARC) material _ hole (4), and enter a channel contact (ARC) (12) at the table of the hard cover (3), put an anti-reflection coating on the back The anti-reflective coating m-port P knife covered by the two non-Λ two-resin cover (13) and the part of the hard cover (3) under it-from the beginning-will be used as the line trench (14) without photoresist The cover insulation layer (2) is partially removed until it touches the circuit layer (1 5) = mile, Page 17 1229375 AM ^ J2U734l Sixth, the scope of patent application-remove the first via contact 12) ,; the anti-reflective coating (A)? C) material, then fill the contact material (〗 β) into the trench (⑷, and finally the ⑷ and the circuit Ditch 2. As the method of applying for the scope of the patent application, 1 act (13) and anti-reflective coating (ARC) (12) —from the temple administration to the photoresist cover 3. As for the scope of the patent application (3) Complete the structuring / removal of the circuit structure and remove it on the hard cover. Immediately remove the knee cover (13) to 4 immediately. • Method as described in item 丨 of the scope of patent application , 1 screen (13) and the hard cover screen (3) are removed together, 〃, said the political action · remove the photoresist cover screen (3) before the photoresist cover (3), 1 疋Mask 5. If the method in the scope of patent application is the first item, and (3) is a mask made of polycrystalline silicon as the material, the sign is: hard mask 6 · If the method in the scope of patent application is the first, (3) Structured by an oblique etching profile. *. Hard mask 7.-A method of contacting a component integrated in a semiconductor substrate, this method includes the following Steps: Several areas are connected-an insulating layer is provided on the semiconductor substrate (1) to fill the first via contact of the contact material (16), and the first contact is formed by the inside, 4) the insulation Within the layer (2)-a hard cover is provided on the insulating layer (2), a hard cover is made of the material (3), and the first path is made of polycrystalline silicon > Page 18 1229375-^^. 92117340 VI. Scope of patent application — ^ 一 -—ϋ 正 —_ The doorway to the insulation layer (2) for the contact hole 〃 (4),-contact the first path Hole (4) down to the ^ contact surface, the insect is engraved to reach the first to be contacted-fill the contact material (i 6) first ^ _ & via contact hole (4), in a circuit layer The first line connected with the contact ^ road, He Xun (16), where the contact material is filled in the first row, the steps are like the advanced reflective coating (ARC) material before the contact hole (4) ( 12) Fill the first via contact hole (4), and contact (ARC) (12) on the surface of the rigid cover (3) ^ σ An anti-reflection coating-on the anti-reflection coating (ARC) (12) A moment of plastic cover screen (1 3) is provided, which has lines, and structured light; eight will / Λ light, anti-reflection coating covered by the plastic cover screen (13) ⑽) (⑴ ⑴ / // The part of the insulation layer (2) of the 2 line trench (14) not covered by the photoresist cover (13) is removed downward until it touches the line layer (丨 5),-the first via contact is removed Inside the hole (4) Anti-reflection coating (ARc) material C1 2) 5 Then fill the contact material (16) into the first via contact hole (4) and the circuit groove (14), and finally fill the contact material (16) and the hard cover (3) It is removed together until it touches at least the surface of the insulating layer (2). This step is to remove the hard mask by a dry etching method. 8. The method of claim 7 in the scope of patent application is characterized by SF6, Page 19! 229375 Amendment No. 92117340 VI. Patent application scope HB r and / or η e / 〇 2 as a dry etching 9. 1 # integrated on the semiconductor substrate ^ using "etching gas. The method of contact, this The method includes the following steps: generating a region I on a semiconductor substrate (1) and setting the I: step: filling a first edge layer (2) of the contact material (16), and forming a first through the inside Contact, the road contact hole (4) in the insulating layer (2) ~ ~ a hard (3) on the insulating layer (2) to form a first 彳) 'and a hard cover insulation layer (2 ), The opening of the road contact hole (4) ~~ Turn the first passage contact hole (4) to the contact surface, and the insect is engraved to touch the first to be contacted ~ = contact material (16) Fill the first via contact hole (4) to form a contact with the contact material path in a circuit layer, and connect a line of ten (1 6): ^ contact material before filling the first via contact hole ⑷ Carry out the following way: a hole = Λ reflective coating (arc) material (12) fill the first pass; two () :; 2) and in the hard cover (3) Set an anti-reflection engraving on the surface and set it on the Λ anti-layer (ARCK12)-a light with circuit structure-~ will not be covered by photoresist twilight (1 3) cover Yun # ώΑ, 邱 八 β 盆 nr The anti-reflective coating (ARC) (12) of knife Γ and the part of the hard mask (3) below it are removed, and the unphotoresist mask (which will be used as the groove for the circuit (14)) 13) covered Case 1229375 on page 20 ^-YYYY ... --- ^ VI. Scope of patent application ------- ^ The insulation layer (2) is partially removed down to touch the circuit layer (丨 5), and the first one is removed one by one The anti-reflection coating (ar◦ material (12) in the contact hole (4) of the via, and then the contact material (1 6) is filled in 6) When a lining is first deposited from the surface, the contact material (丨 6) is filled into the spoon contact hole (4) and the line groove (14), and finally the contact material (a 6 ) And rigid cover (3) —from the bottom down to at least touch the insulation layer '(2) Table is characterized by: forming the lining which is characterized by: tungsten as 1 0 · material such as the method of the 9th scope of the patent application It is titanium (T i) or titanium nitride (τ in). 1 1 · Contact the material (1 6) as the method in the first patent application scope. 1 2 _ As the method in the first patent application scope, its characteristics are : The contact material (丨 6) and the hard cover (㈧removed / dropped 0 ″ 13 · — a kind and integration on the semiconductor (chemical mechanical polishing method) Basic contact method, this method comprises the following steps of forming the first contact by first setting a filling contact material (1 6) on a semiconductor substrate (1), and generating the following steps in several regions of the elements in the material: An insulating layer (2), and an internal via contact hole (4) inside the insulating layer (2)-one (3) is provided on the insulating layer (2) as a forming cover (3), And in the opening of the hard-layer curtain insulation layer (2), fix the way to the contact hole of the via (4)-etch the first via contact ( Amended in 1229375: _tS_92U7340 6. Until the contact surface of the patent application, the contact material (1 6) is filled into the first via contact hole (4), and the road is formed in a circuit layer with the contact material (16 The first line of the connection is as follows: after filling the contact material into the first via contact hole, the following steps are followed: '' especially retreat-fill an anti-reflective coating (ARC) material (12) = two in the hard type Set on the surface of the mask-an anti-reflection layer (ARC) (12)-a light with a line structure-will not be covered by the photoresist) The anti-reflection coating (ARC) (12, the trowel and the hard mask (3) part underneath go to L,-will be used as the part of the trench (14) without the insulating layer (2) of the photolithography curtain) Removal down to touch the line layer m) Complex-Remove the first via contact hole (4) Two (12), K's reflective coating (ARC) material and then the contact material (1 β) 埴Inside Renrong Slot (14), finally remove J Guangdi a via contact hole U) and under the line trench to at least touch the surface of the insulation layer (2) The mask (3) forms a first path to connect at the same time to reach the second surface to be contacted at the same time. At the same time, a method is used to form a 14. If the scope of the patent application is 13; 彳 path contact hole (5) . Before contacting the material (1 6), it will be agglomerated in the meeting, which is characterized in that: it is deposited on the surface in contact with the contact material (16). Page 22 1229375 ___ Case No. 92117340_ VI. Scope of patent application Out-layer lining. 1 5. According to the method of claim 13 in the scope of patent application, the special contact material (16) will be in contact with the contact material (丨 6) ^ ^ · A layer made of titanium (Ti) or nitriding Lining made of titanium (TiN). First deposit on the surface 1 6. If the method of item 3 of the scope of patent application is applied, the second line connected to the contact material (16) in the bean contact hole (5)-1; In the method of item 13, the contact material (16) in the basin and the ten-way contact hole (5) is outside, and one is connected by two conductors. Within the circuit layer and the second ;: generating J Nailing with several areas of the elements in the iiinf substrate, so this method includes the following steps: filling the substrate (ι) ΐ setting-an insulating layer (2 ), And the first contact hole (4) inside the material (16) is used to form the first contact at the π-thickness m. The first contact is in the insulation layer (2) (3 ^ layer ( 2) A hard cover (3) is provided, and the hard cover is insulated with the following: to form the first via contact hole 通往, the solid via contact hole (4) is etched down to reach the contact to be contacted Up to the first contact surface, = the contact material (16) fills the first via contact hole (4), and the first line connected to the contact material (1 6) is formed in each of the circuit layers. Contact material advanced before filling the first via contact hole (4) Page 23 1229375 Amendment A_3 VI. Scope of patent application " '-' The following steps, ——fill an anti-reflection coating (ARC) material (12) into the first via contact hole (4), and An anti-reflection coating (ARC) (12) is provided on the surface of the hard mask (3), " A photoresist mask with a line structure is provided on the anti-reflection coating (ARC) (1 2) (1 3),-removing the anti-reflection coating (ARc) (i2) part not covered by the photoresist mask (13) and the hard mask (3) part below it, ^ # 将^ The part of the circuit trench (1 4) that is not covered by the photoresist mask (1 3) is removed downward until it touches the circuit layer (1 5), (12 ^ Except for the anti-reflection coating (ARC) material contact material (16) in one of the via contact holes (4), fill the first via contact hole ⑷ and the line trench, and then touch the contact material (丨 6) and the hard-to-reach Up to the surface of the insulating layer, the cover (3) is removed down to the surface of the semiconductor substrate (1). The structure layer (9) and a cover layer (10) are structured together. ：： The gate electrode is oxidized to the gate electrode layer (9), and then it is formed. The first channel is contacted with a hole (== ⑴), and then an auxiliary material is used. ^ Y In the insect cover layer (4) or the first and second passages 1), a passage contact hole then fills the cover layer (1 0) and etches down (j'5) and covers it, helping the material (1 1), and finally remove the I electrode layer (9), and then supplement it with anti-reflection coating (ARC) material (12) 1229375 ^^ No. 117340 〃, the scope of patent application ^ Dong Yu Yi 个, the same contact steps (6) into the via hole (4) through the contact processing hole (4). The method of applying the patent to No. 18 of the scope of the patent application to the channel is characterized by: 乂 plant factory = :)? Before the surface that will contact the contact material (16) first = total 4J · Shishen May The method of item No. 18 of the patent scope '1 is characterized by · Lu * contact material (J Xi Jin +', sign is · filling in and out-two i 6) the difference will be in contact with the contact material (16) On the surface, 层 = J layer: titanium ⑴) or titanium nitride (TlN). …, The method of applying patent No. 丨 8 to Erji D. The inner part (2) forms a toilet ---, which is characterized by the connection between the insulation layer and the road, ', ,, and the road (electrical insulation) ) The second parallel: ^: li6) The third line connected by the contact material (16): The method of road contact enclosure item 18, which is characterized by: the third link 23 · — a kind of integration with Feng in Feng Guide the method of contacting several areas of the components in the substrate to generate 2k methods. The method includes the following steps: First, a semiconductor substrate (i) is filled with an insulating layer (2), and borrowed. The first contact is formed from the inside, and the via contact holes U) are in the insulation layer (2)-a stone bearing is printed on the insulation layer (2) ^ 4 hard-type curtains (3), and (3) An opening is formed as the _ 佃 th insulating layer 内, which is the way for the via contact holes ⑷-the first via contact hole (up to 4 π h contact surfaces,) downwards I reach the first to be touched Page 25 1229375 MMl 92117340 VI. Patent application scope Fill the contact material (16) into the first via contact hole (4 way in a circuit layer to form the first line connected with the contact material (', b)) Among them: in the following steps of filling the contact material into the first via contact, I 4) is advanced hole: a kind of reflective coating (ARC) material (12) is filled into the first via contact hole (4), Asia is installed on the surface of the rigid cover (3) (ARC) (12) > a reflective coating (ARC) (2) is provided-a light with a line structure (13M ^ ^ (AR 〇 (12) The knife and the hard cover (3) below it are removed together to remove the insulation and the layer is made of == slot Γ4) that is not covered by the photoresist cover (13)-to remove the layer that touches the circuit Up to (15), (12) An anti-reflection coating (arc) material contact material in a via contact hole (4) is filled in the first via contact hole ⑷ and the line groove, and then the contact material (16 ) And the cover (and the surface of the insulating layer ⑴) are removed down to at least touch to form a honey _ 乂, to reach the second waiting two: : ^ Simultaneously formed in the same way-a via contact hole (5) is passed directly to the contact surface of the insulating screen, and the second path i is connected to form a space (electrically insulated) from the first line and is in contact with the path ( 5) Connect the second wire inside the contact material (16) Chapter 1229375 __ Case No. 92Π7340_ Year VI, Patent Application Road, and the layer stack consisting of the material layer (9) and a cover layer (1) on the semiconductor substrate (1) table: The third via contacts the gate oxide layer to the gate oxide layer (9), and then a through etching is formed to contact the first and second via contact holes (4, with a phase-selective cap layer (ί)), and then Then use an auxiliary material (11) to etch the bottom to the I hole (4) or the first and second via contact holes (4 via corners! Click 'Next' and then etch the cover layer (10) down to the gate Pole) is really full and covered to remove the auxiliary material (11), finally, layer (9), and The third via contact hole ⑷ is performed as / ^^ ⑽), the material f contact hole ⑷ and the second via contact hole (5 back to the first one). 24. If the method of the 23rd scope of the patent application is applied, it is a physical step. : Material: α6) Before contact with the contact material (16): Fill in and draw out a layer of lining. The surface of grapes first lays on 25. If the method of applying patent scope 帛 23, before contacting the material (16), it will be in contact with the contact material π ^^: Fill in the control ^ κ ΐ I1 / or nitride ( Τ_ 成 沉 上 上 沉 赖 The inner (2) forms a circuit separated from the first circuit and the special city: insulated in the insulation layer) and separated from the third via contact hole (electrical third circuit. (Inner contact material (1 6 ) Connection 2 7. If the contact material inside the contact hole (6) of the second patent application scope (6), the outer contact, the outer contact, the outer contact, the third contact, the third contact, and the third contact. 1229375 No. 92Π7340 correction Sixth, the scope of patent application 28.-A method for integration with semiconductor contact, this method includes generating contact with several areas of the element-one step on the semiconductor substrate (1): filling the contact material (1 6) The first contact slave layer (2), and the first contact is formed by the inside, the contact hole (4) is in the insulating layer (2)-a hard-type (3) is provided in the insulating layer (2) Set one as the opening to form the first curtain (3) 'and in the hard cover curtain insulation layer (2). The stray contact hole (4) is used to lead to the first-contact hole (4) to the first path. As far as the contact surface, it is etched until it touches the first contact material to be contacted-= the contact material (16) fills in the first path, the line one, and forms and connects in a circuit layer. 6) The first step of the connection: before the contact material is filled in the first row, the via contact hole (4) is advanced-the anti-reflective coating (ARC) material hole (4) is placed in the hard cover One = two is set on the surface of the curtain (3), and the path contact (ARC) (1 2) ^ σ is provided with an anti-reflection coating-in the anti-reflection Layer (ARC) (12) is provided a gum engraving mask (13) on, β Deep ,,,. First, the anti-reflection part not covered by the photoresist mask (13) and the hard mask (3) under it are removed together: QARC) (12)-it will be used as a line trench ( 14) The portion of the insulating layer (2) not covered by the photoresist mask (13) is removed downward until it touches the wiring layer 5), 1229375 on page 28-the scope of patent application ^^ --- excellent to ____ 12 j, except for the anti-reflection coating (arc) material in the first via contact hole 22, the contact material (16) is filled in the first In one slot (1 4), the tower contact hole (4) and the line groove ^ and then the contact material (丨 hardly touches the surface of the edge layer (2), the curtain (3) is removed down to = The method of forming the first via contact hole to reach the second to-be-connected net product μ ^ j simultaneously forms a via contact hole (5) that is always connected to the second pass surface, and the contact in the road contact hole (5) Material = internally connected to the second conductor, and (6) on the surface of the other conductor substrate (1), a to + θ material layer (9) and a covering layer are oxidized by a gate electrode To the layer stack formed by the gate handle & now (1 0), the first pass is contacted with the 妾: hole (6) by the etch of A, S :, and at the same time, it is etched down to the cover layer (1). Tie ^ and a via contact hole (5) The road contact hole ⑴ is filled and daggered:? The road contact hole ⑷ and the second pass gas layer 化 物, And remove the auxiliary material covering ... engraving / anti-reflective coating (ARC) material U1), and finally perform the same processing steps on the first via contact hole and the contact hole (6) as described above. — Contact holes: the method of Kewei item 28, characterized by: on the filling-in-out-layer:)? ... on the surface in contact with the contact material (⑴ :; 1229375 Case No. 92117340 Amendment VI. Application for Patent Range 30. For the method of applying for the item No. 28 in the patent scope, it is characterized by meeting with the contact material (1 6) before filling in the contact material (1 6). A layer of titanium (T i) or titanium nitride (T i N) is deposited on the contacting surface. 3 1. The method according to item 28 of the scope of patent application, characterized in that: (2) forming an insulation layer (electrically insulated) from the first line or the first and second lines in the insulation layer and separated from the third line A third line connected by the contact material (1 6) in each of the via contact holes (6). 32. The method according to item 28 of the scope of patent application, characterized in that the contact material (16) in the third channel contact hole (6) is connected to the third conductor in another circuit layer. « Page 30