TWI225729B - Improved variable gain amplifier - Google Patents

Improved variable gain amplifier Download PDF

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TWI225729B
TWI225729B TW092112123A TW92112123A TWI225729B TW I225729 B TWI225729 B TW I225729B TW 092112123 A TW092112123 A TW 092112123A TW 92112123 A TW92112123 A TW 92112123A TW I225729 B TWI225729 B TW I225729B
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patent application
scope
item
differential
transistors
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TW092112123A
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TW200307390A (en
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Hung-Min Jen
David K Su
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Atheros Comm Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3211—Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21175—An output signal of a power amplifier being on/off switched
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45138—Two or more differential amplifiers in IC-block form are combined, e.g. measuring amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45318—Indexing scheme relating to differential amplifiers the AAC comprising a cross coupling circuit, e.g. two extra transistors cross coupled
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45332—Indexing scheme relating to differential amplifiers the AAC comprising one or more capacitors as feedback circuit elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45458—Indexing scheme relating to differential amplifiers the CSC comprising one or more capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45464—Indexing scheme relating to differential amplifiers the CSC comprising one or more coils
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45512—Indexing scheme relating to differential amplifiers the FBC comprising one or more capacitors, not being switched capacitors, and being coupled between the LC and the IC
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45702—Indexing scheme relating to differential amplifiers the LC comprising two resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45704—Indexing scheme relating to differential amplifiers the LC comprising one or more parallel resonance circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7221—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch at the output of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
  • Control Of Amplification And Gain Control (AREA)

Description

1225729 玖、發明說明： 明所屬 2 發明領域 本發明係關於一種可變增益放大器，更明確地說，本 5 發明係關於一種具有改良式線性特性之可變增益放大器。 t先前技術3 發明背景 可變增益放大器（VGA)是習知的。在通訊工業中，尤 其是無線通訊，可變增益放大器係習知被使用以提供中間 10 頻率(IF)或無線電頻率(1C)信號之放大。在一可變增益放大 器中，控制元件將提供一組增益信號至可變增益放大器， 並且，依據該增益信號，該可變增益放大器將把輸入信號 放大對應於增益信號之數量，以便得到一組放大器輸出信 號。 15 雖然適當選擇被輸入至可變增益放大器之增益信號是 任何可變增益放大器所需要的，但是被使用於製作可變增 益放大器之組件也是重要的。如第1圖所展示，需要得到一 組可變增益放大器，其中輸入信號以及輸出信號是線性相 關，如標識為’’理想’’圖形所展示。儘管實際上這理想情況 20 是不可能的，但是得到較接近該理想情況之輸入-輸出特性 是所需求的。 一習見的可變增益放大器將具有展示於第1圖中標識 為"習見”圖形之輸入-輸出特性。如所見，其增益越大，一 般而言所引介之非線性數量便越大。 1225729 最一般化的可變增益放大器係一組具有尾部電流源之 差動組對。其增益是利用變化尾部電流源之偏壓電流加以 調整。這是連續的類比調整。這一般的可變增益放大器之 變化為使用多數個被數位地切換以供增益控制之差動組 5 對。 · 一組範例習見的可變增益放大器展示於第2A圖與第 2B圖。如所展示，可變增益放大器200包含多數個平行連接 的增益級210，各增益級具有一組共同輸入212，以及一組 共同輸出214，且在共同輸出214具有電感式負載216。各增 10 益級210包含一組放大器220以及一組開關222之組合（進一 步地展示為第2A圖中之開關肘3與]^4)。在各增益級21〇之内 的放大器220將提供一部份之增益，其整體增益是由來自各 增益級210内的放大器220之增益以及決定增益級210是否 連接到共同輸出212之開關222的狀態所決定。利用供電至 15 不同數目之增益胞元，流入輸出電感器216之電流便被改變 並且導致不同的增益。例如，VGA利用僅供電至增益級1 而具有其最小增益。隨著增益級1與增益級2被供電，可變 增益放大器200將得到6dB的更多增益，並且在所有增益級 被供電後，可變增益放大器200將達成其最大增益。 20 展示於第2A圖之增益級210更詳細展示於第2B圖。如 所展示’ 一組差動共源極串接放大器被使用以經由不同的 增益設定將輸入阻抗變化最小化。 為了在寬頻率範圍保持增益之精確度，例如無執照國 家資訊結構（U-NII)頻帶中自5.150Hz之較低頻帶至 6 1225729 5.8250Hz之較高頻帶，可變增益放大器200之輸入阻抗必須 在不同的增益設定之上保持相同值。理論上，由於密勒效 應，任何跨越輸入以及輸出節點之電容將被增益所放大並 且被展示在輸入節點。如第2Β圖所展示，輸入電晶體Ml與 5 M2之重疊電容Cgd在增益胞元被供電或斷電時對於輸入節 點，節點-A與節點-B，將具有不同的有效負載。為了減低 在不同的增益設定之這有效負載之變化，串接元件M3與M4 被添加以便減低跨越節點-A與節點_G(節點-B與節點-H)之 增益。這串接機構也是習知為單向化機構。 10 雖然’該串接元件可以減低跨越Cgd之增益並且使密勒 效應最小化，但在信號通道上需要額外的電晶體]^3與^14。 因此，可變增益放大器2〇〇在節點-c與節點-E(節點-D與節 點-F)之間需要更多電壓保留範圍以供適當偏壓條件。這導 致最大可允許輸出電壓擺幅掉至(Vdd-2*Vdsat)，並且使大 15信號有不良線性性能。此外，其共源直接連接到一並非理 想高-阻抗節點之電流源，Ibias。這導致不良之共模排斥。 以一種將放大器之輸入與輸出去耦合的方式操作之放 大器也是習知的。一組特定類之此種放大器以一種不需的 回授被消除之方式操作。此放大器被習知為使用一種中性 20化方法，而非使用信號僅可以在大頻寬之上單向流動之單 向化方法之放大器，並且因而消除，而非抵消，不需要的 回授。 第3圖展示此一使用中性化方法之放大器的範例。執行 中性化方法之此等放大器並未廣泛被使用。未被廣泛使用 7
原因之一，如於康橋大學印刷公司1998年所出版，ThomasH
Lee所著之"CMOS無線電積體電路之設計”，第2〇弘2〇6頁所 討論，在於提供具有中性化之電路是不易的，因為得到抵 消舄要一電路，其中一電容必須匹配另一電容以便使抵消 發生。但是，在許多情況中，必須匹配之電容是其他的電 壓之相依電容，其使跨越整個操作範圍得到該匹配成為不 易。 製作可變增盈放大器之習見的方式為使用一種電路， 例如展示於第2A圖與第2B圖，並且接著更動其電流以便得 到所需的可變增益，其允許上述討論之電壓相依性存在。 因此’中性化電路先前並未被使用於可變增益放大器中， 尤其是在以CMOS製作之可變增益放大器。更確切地說，習 見的電路僅使用採用單向化方法之放大器。 【發明内容】 發明概要 本發明之一優點為增加跨越可變增益放大器之整個範 圍的線性。 本發明之另一優點為提供一種可變增益放大器，當可 變增盈放大器之内不同的增益級被導通並且中斷時其具有 穩定操作特性。 本發明之另一優點為提供經由不同的增益設定之固定 輸入阻抗。 本發明之進一步優點為提供一種可變增益放大器，其 中的各增益級將可用的電壓擺幅最大化。 本發明之進一步優點為改進共模排斥性能並且衰減無 用的諧波。 尤其’上述優點’不論個別或其組合，係利用本發明 的不同論點所達成。 在一論點中，本發明提供一種具有多數個增益級之可 變增益放大器，其中各增益級使用執行中性化方法之電路 被製作。 本發明上述以及其他的論點將在此處被說明。 圖式簡單說明 本發明上述以及其他目的、特點、以及優點，利用來 考本發明之非限定範例實施例之圖形，被進一步地說明於 下列詳細說明中，其中在許多圖中相同參考號碼代表本發 明之相似部分並且其中： 第1圖是展示一理想情況，一組習見的可變增益放大 器’以及一組依據本發明之可變增益放大器的放大特性之 圖形； 第2A圖與第2B圖展示一組習見的可變增益放大器； 第3圖展示一組習慣上被使用於得到中性化之習見的 放大器電路； 第4圖展示一組被使用於解釋本發明之概念式差動增 益胞元；以及 第5A圖與第5B圖展示一組依據本發明之可變增益放 大器。
L TtC

Claims (1)

1225729 |_ 年，月Θ曰 修正本 拾、申請專利範圍： 蠢 1. 一種可接收輸入信號及控制信號並輸出被放大信號之 # 電路，該電路包含： 可接收該輸入信號之一差動輸入； 5 可輸出該被放大信號之一差動輸出；以及 · 耦合於該差動輸入及該差動輸出之間的一可變增 · 益放大器，該可變增益放大器含有數個平行配置之增益 級，各增益級包含： 一對差動式電晶體；以及 10 一對交叉連接電容器，該對交叉連接對容器係耦合 ’ 至該對差動式電晶體，每一交叉連接電容器係耦合自該 對差動式電晶體中之一者之一輸入，並且係被組構為可 實質地消除任何可導致回授之不需的信號，且因而可在 各增益級保持實質地固定之阻抗，並且 15 其中該控制信號可決定哪一增益級應被使用於將 該輸入信號放大以便得到該被放大信號。 · 2. 如申請專利範圍第1項所述之電路，其中該差動輸入、 該差動輸出以及該可變增益放大器係被製作於一積體 電路中。 • 20 3.如申請專利範圍第2項所述之電路，其中該對差動式電 ， 晶體係為MOS電晶體，各具有一彼此連接之源極，並且 各閘極可接收該等差動輸入信號中之一者。 4.如申請專利範圍第3項所述之電路，其中該等MOS電晶 體係為NMOS電晶體。 14 1225729 5. 如申請專利範圍第4項所述之電路，其中該對交叉連接 電容器係各自使用被組構為一電容器之另一NMOS電 晶體而形成，且其中各另一NMOS電晶體之源極係被連 接至該等NMOS電晶體中之一者的該汲極，各另一 < 5 NMOS電晶體之汲極係被連接到該差動輸出之該相關 ·’ 輸出，並且各另一NMOS電晶體之閘極係被連接到該等 · NMOS電晶體中之一者之該閘極。 6. 如申請專利範圍第5項所述之電路，其更包括耦合至該 φ 差動輸出之一電感式負載。 10 7.如申請專利範圍第6項所述之電路，其更包括耦合於該 等NMOS電晶體之該等連接源極以及接地之間的一 MOS電晶體開關。 8. 如申請專利範圍第7項所述之電路，其更包括耦合於該 等NMOS電晶體之該等連接源極以及該等MOS電晶體 15 開關之該汲極之間的一電感器。 9. 如申請專利範圍第6項所述之電路，其更包括耦合於該 春 等NMOS電晶體之該等連接源極以及接地之間的一電 流源。 10. 如申請專利範圍第8項所述之電路，其更包括耦合於該 20 等NMOS電晶體之該連接源極以及接地之間的一切換 式可變電容器。 11. 如申請專利範圍第5項所述之電路，其中該對差動式電 晶體並未含有以串接組態配置的額外電晶體。 12. 如申請專利範圍第5項所述之電路，其中該對差動式電 15 1225729 晶體係為一對RF差動式電晶體。 13. 如申請專利範圍第2項所述之電路，其更包括耦合至該 差動輸出之一電感式負載。 14. 如申請專利範圍第2項所述之電路，其更包括耦合於該 5 對差動式電晶體以及接地之間的一 MOS電晶體開關。 15. 如申請專利範圍第14項所述之電路，其更包括耦合於該 對差動式電晶體的該源極以及該MOS電晶體開關之該 汲極之間的一電感器。 16. 如申請專利範圍第15項所述之電路，其更包括耦合於該 10 等NMOS電晶體之該等連接源極以及接地之間的一電 流源。 17. 如申請專利範圍第6項所述之電路，其更包括耦合於該 對差動式電晶體以及接地之間的一電流源。 18. 如申請專利範圍第2項所述之電路，其中該對差動式電 15 晶體並未含有以串接組態配置的額外電晶體。 19. 如申請專利範圍第1項所述之電路，其中該對差動式電 晶體並未含有以串接組態配置的額外電晶體。 16
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EP1504526A1 (en) 2005-02-09
EP1504526B1 (en) 2009-01-28
WO2003094344A1 (en) 2003-11-13
ATE422109T1 (de) 2009-02-15
AU2003237140A1 (en) 2003-11-17
DE60326040D1 (de) 2009-03-19
US6737920B2 (en) 2004-05-18
US20030206062A1 (en) 2003-11-06
TW200307390A (en) 2003-12-01

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