DE69906725D1 - Hochgenaue Vorspannungsschaltung für eine CMOS Kaskodenstufe, insbesondere für rauscharme Verstärker - Google Patents
Hochgenaue Vorspannungsschaltung für eine CMOS Kaskodenstufe, insbesondere für rauscharme VerstärkerInfo
- Publication number
- DE69906725D1 DE69906725D1 DE69906725T DE69906725T DE69906725D1 DE 69906725 D1 DE69906725 D1 DE 69906725D1 DE 69906725 T DE69906725 T DE 69906725T DE 69906725 T DE69906725 T DE 69906725T DE 69906725 D1 DE69906725 D1 DE 69906725D1
- Authority
- DE
- Germany
- Prior art keywords
- low noise
- highly accurate
- bias circuit
- noise amplifiers
- cascode stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/205—Substrate bias-voltage generators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45197—Pl types
- H03F3/45201—Non-folded cascode stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/453—Controlling being realised by adding a replica circuit or by using one among multiple identical circuits as a replica circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45464—Indexing scheme relating to differential amplifiers the CSC comprising one or more coils
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45696—Indexing scheme relating to differential amplifiers the LC comprising more than two resistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45704—Indexing scheme relating to differential amplifiers the LC comprising one or more parallel resonance circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP99830542A EP1081573B1 (de) | 1999-08-31 | 1999-08-31 | Hochgenaue Vorspannungsschaltung für eine CMOS Kaskodenstufe, insbesondere für rauscharme Verstärker |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69906725D1 true DE69906725D1 (de) | 2003-05-15 |
Family
ID=8243561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69906725T Expired - Lifetime DE69906725D1 (de) | 1999-08-31 | 1999-08-31 | Hochgenaue Vorspannungsschaltung für eine CMOS Kaskodenstufe, insbesondere für rauscharme Verstärker |
Country Status (3)
Country | Link |
---|---|
US (1) | US6392490B1 (de) |
EP (1) | EP1081573B1 (de) |
DE (1) | DE69906725D1 (de) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3515725B2 (ja) * | 2000-01-26 | 2004-04-05 | Nec化合物デバイス株式会社 | 低電流増幅回路 |
US6731157B2 (en) | 2002-01-15 | 2004-05-04 | Honeywell International Inc. | Adaptive threshold voltage control with positive body bias for N and P-channel transistors |
JP2003243938A (ja) * | 2002-02-15 | 2003-08-29 | Mitsubishi Electric Corp | 半導体装置 |
US6737920B2 (en) * | 2002-05-03 | 2004-05-18 | Atheros Communications, Inc. | Variable gain amplifier |
US7098737B2 (en) * | 2002-05-31 | 2006-08-29 | Kabushiki Kaisha Toshiba | Variable inductor, oscillator including the variable inductor and radio terminal comprising this oscillator, and amplifier including the variable inductor and radio terminal comprising this amplifier |
US6924701B1 (en) | 2002-09-03 | 2005-08-02 | Ikanos Communications, Inc. | Method and apparatus for compensating an amplifier |
US7190230B1 (en) | 2002-09-11 | 2007-03-13 | Marvell International Ltd. | Method and apparatus for an LNA with high linearity and improved gain control |
US6977553B1 (en) | 2002-09-11 | 2005-12-20 | Marvell International Ltd. | Method and apparatus for an LNA with high linearity and improved gain control |
US7253690B1 (en) | 2002-09-11 | 2007-08-07 | Marvell International, Ltd. | Method and apparatus for an LNA with high linearity and improved gain control |
US7157972B2 (en) * | 2002-12-20 | 2007-01-02 | California Institute Of Technology | Common gate with resistive feed-through low noise amplifier |
US6778013B1 (en) * | 2003-02-21 | 2004-08-17 | Analog Devices, Inc. | Buffer amplifier structures with enhanced linearity |
US6822518B1 (en) * | 2003-04-29 | 2004-11-23 | Realtek Semiconductor Corp. | Low noise amplifier |
DE10342569A1 (de) * | 2003-09-15 | 2005-04-14 | Infineon Technologies Ag | Frequenzteiler |
US6888410B1 (en) * | 2003-10-10 | 2005-05-03 | Broadcom Corp. | Power amplifier having low gate oxide stress |
US7034618B2 (en) | 2004-03-09 | 2006-04-25 | Nokia Corporation | Temperature compensating circuit |
EP1726091A1 (de) * | 2004-03-09 | 2006-11-29 | Nokia Corporation | Temperaturausgleichsschaltung |
US7266360B2 (en) * | 2004-04-07 | 2007-09-04 | Neoreach, Inc. | Low noise amplifier for wireless communications |
US7113043B1 (en) | 2004-06-16 | 2006-09-26 | Marvell International Ltd. | Active bias circuit for low-noise amplifiers |
US8022776B2 (en) * | 2005-08-04 | 2011-09-20 | The Regents Of The University Of California | Origami cascaded topology for analog and mixed-signal applications |
GB0609739D0 (en) * | 2006-05-17 | 2006-06-28 | Univ Bradford | High frequency low noise amplifier |
GB2448525A (en) | 2007-04-18 | 2008-10-22 | Acp Advanced Circuit Pursuit Ag | A linearized low-noise voltage-controlled current source for a mixer |
US7541871B2 (en) | 2007-05-02 | 2009-06-02 | Micron Technology, Inc. | Operational transconductance amplifier (OTA) |
WO2009004534A1 (en) * | 2007-07-03 | 2009-01-08 | Nxp B.V. | Electronic device and a method of biasing a mos transistor in an integrated circuit |
US7920027B2 (en) * | 2008-04-07 | 2011-04-05 | Qualcomm Incorporated | Amplifier design with biasing and power control aspects |
US8847689B2 (en) * | 2009-08-19 | 2014-09-30 | Qualcomm Incorporated | Stacked amplifier with diode-based biasing |
US8797087B2 (en) | 2011-06-24 | 2014-08-05 | Intel Mobile Communications GmbH | Reference quantity generator |
JP6588878B2 (ja) * | 2016-08-30 | 2019-10-09 | 株式会社東芝 | 高周波半導体増幅回路 |
US9837965B1 (en) | 2016-09-16 | 2017-12-05 | Peregrine Semiconductor Corporation | Standby voltage condition for fast RF amplifier bias recovery |
US10250199B2 (en) | 2016-09-16 | 2019-04-02 | Psemi Corporation | Cascode amplifier bias circuits |
US9882531B1 (en) | 2016-09-16 | 2018-01-30 | Peregrine Semiconductor Corporation | Body tie optimization for stacked transistor amplifier |
US9843293B1 (en) | 2016-09-16 | 2017-12-12 | Peregrine Semiconductor Corporation | Gate drivers for stacked transistor amplifiers |
FR3059495A1 (fr) * | 2016-11-29 | 2018-06-01 | Stmicroelectronics (Grenoble 2) Sas | Dispositif attenuateur dans un etage de transmission radiofrequences |
US10439563B2 (en) | 2017-02-28 | 2019-10-08 | Psemi Corporation | Positive temperature coefficient bias compensation circuit |
US10439562B2 (en) | 2017-02-28 | 2019-10-08 | Psemi Corporation | Current mirror bias compensation circuit |
US10056874B1 (en) | 2017-02-28 | 2018-08-21 | Psemi Corporation | Power amplifier self-heating compensation circuit |
US10276371B2 (en) | 2017-05-19 | 2019-04-30 | Psemi Corporation | Managed substrate effects for stabilized SOI FETs |
US10291194B2 (en) | 2017-10-09 | 2019-05-14 | Infineon Technologies Ag | System and method for biasing an RF circuit |
US11251759B2 (en) | 2020-01-30 | 2022-02-15 | Texas Instruments Incorporated | Operational amplifier input stage with high common mode voltage rejection |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4260956A (en) * | 1979-03-16 | 1981-04-07 | Rca Corporation | Temperature compensating bias circuit |
JPS58202607A (ja) * | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 増幅器 |
US5748040A (en) * | 1995-07-17 | 1998-05-05 | Crystal Semiconductor Corporation | Fully differential high gain cascode amplifier |
US5563553A (en) * | 1995-08-15 | 1996-10-08 | Sigmatel Inc. | Method and apparatus for a controlled oscillation that may be used in a phase locked loop |
US5717360A (en) * | 1996-04-16 | 1998-02-10 | National Semiconductor Corporation | High speed variable gain amplifier |
US5838191A (en) * | 1997-02-21 | 1998-11-17 | National Semiconductor Corporation | Bias circuit for switched capacitor applications |
IT1313384B1 (it) * | 1999-04-28 | 2002-07-23 | St Microelectronics Srl | Schema di polarizzazione in modo corrente ad alta precisione e minimorumore per un transistore bipolare a giunzione con degenerazione ut |
-
1999
- 1999-08-31 DE DE69906725T patent/DE69906725D1/de not_active Expired - Lifetime
- 1999-08-31 EP EP99830542A patent/EP1081573B1/de not_active Expired - Lifetime
-
2000
- 2000-08-28 US US09/650,022 patent/US6392490B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1081573A1 (de) | 2001-03-07 |
US6392490B1 (en) | 2002-05-21 |
EP1081573B1 (de) | 2003-04-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |