TWI225577B - Smart overlay control - Google Patents

Smart overlay control Download PDF

Info

Publication number
TWI225577B
TWI225577B TW92120390A TW92120390A TWI225577B TW I225577 B TWI225577 B TW I225577B TW 92120390 A TW92120390 A TW 92120390A TW 92120390 A TW92120390 A TW 92120390A TW I225577 B TWI225577 B TW I225577B
Authority
TW
Taiwan
Prior art keywords
alignment
registration
registration control
patent application
value
Prior art date
Application number
TW92120390A
Other languages
Chinese (zh)
Other versions
TW200504479A (en
Inventor
Kun-Pi Cheng
Hisin-Yuan Chen
Yo-Nien Lin
Feng-Chen Chung
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Priority to TW92120390A priority Critical patent/TWI225577B/en
Application granted granted Critical
Publication of TWI225577B publication Critical patent/TWI225577B/en
Publication of TW200504479A publication Critical patent/TW200504479A/en

Links

Abstract

An automatic method to maintain and correct overlay in the fabrication of integrated circuits is described. An overlay table is automatically generated for lots run through a process toll. An overlay correction is calculated from the overlay control table and sent to the process tool for real-time or manual overlay correction.

Description

1225577 五、發明說明(1) 發明所屬之技術領域: 本發明係一種積體電路之製程技術,尤其關於積體電 路製程中,自動微影對位矯正(automatic overlay correction)之4支#?。 先前技術: 微影製程(Lithography)廣泛應用於積體電路 (Integrated Circuit)之製程中。如下所述,係一般習 用之微影製程:首先在基材上形成一第一沉積層,並於第 一沉積層上方塗佈一光阻層;透過光罩對上述光阻層曝 光,進行圖案轉移(Pattern Transform),藉以定義第一 沉積層上之圖案;隨後,透過上述曝光後之光阻層對第一 沉積層進行钱刻,藉以形成上述第一沉積層之圖案,隨 後,重複上述步驟,在第一沉積層上形成第二沉積層。 一般習用之積體電路製程通常不只包含一道微影製 程,因此,為了確保所製作之積體電路元件與原先之設計 相符,在每一道微影製程之圖案都必須確實對位 (alignment);為達此目的,通常在每一層沉積層上加入 一對位標記(alignment mark),以提供一對位之參考。 如下所述,係對一習知方塊對位標記(n b ο X i n b〇Xπ alignment mark)進行描述:為避免方塊對位標記影響製1225577 V. Description of the invention (1) The technical field to which the invention belongs: The present invention relates to a process technology of integrated circuits, and particularly to four #? Of automatic overlay correction in the process of integrated circuits. Prior technology: Lithography is widely used in the process of integrated circuits. The following is a general lithography process: First, a first deposition layer is formed on a substrate, and a photoresist layer is coated on the first deposition layer; the photoresist layer is exposed through a photomask to perform a pattern. Transfer (Pattern Transform) to define the pattern on the first deposited layer; then, the first deposited layer is engraved with money through the exposed photoresist layer to form the pattern of the first deposited layer, and then the above steps are repeated , Forming a second deposited layer on the first deposited layer. Generally, the integrated circuit manufacturing process usually includes more than one lithography process. Therefore, in order to ensure that the integrated circuit components produced are consistent with the original design, the pattern in each lithography process must be accurately aligned; To achieve this purpose, an alignment mark is usually added to each layer to provide a reference for the alignment. As described below, a conventional block alignment mark (n b ο X i n b〇Xπ alignment mark) is described.

第7頁 1225577 五、發明說明(2) 程之進行,方塊對位標記通常設置於晶圓邊緣,且每一沉 積層上之方塊對位標記,均大於其上方沉積層之方塊對位 標記,而每一個方塊對位標記均以x_y座標訂出其中心位 置,藉由比較上述每一個方塊對位標記中心位置之x-y讀 值,可以獲得每一沉積層相對於其他沉積層之轉譯誤差 (translation error) 〇 在習知技術上,每隔一周或是每隔一個月,技術人員 就根據上述轉譯誤差,對曝光機(exposure tool)進行手 動之回饋(feed back)調整;然而,該手動回饋調整無法 線上即時(r e a卜t i m e)對轉譯誤差進行校正,因而,導致 每一層圖案之對位欠缺穩定度,而造成曝光機產生無法預 期之轉譯誤差;除此之外,各沉積層不同之表面起伏 (topology),以及其他製程(例如:回火(annealing) 製程)所產生之晶圓變形,等因素,均對對位之準確造成 影響;·因此,必須以一線上即時對位矯正(〇 v e r 1 a y c〇r r e c t i ο η)技術解決上述問題。 在美國專利申請號6 2 1 8 2 0 0 B1中,Che η等人展示了利用 一自動對位橋正系統對多沉積層進行對位之方法(a method of aligning multiple layers in an automatic overlay correction system)。在美國專利中請號 6 1 2 7 0 7 5中,H s u展示了確認一用以測量轉譯誤差之測量儀 器準確度的方法(a method for checking the accuracy of a measuring instrument used to measure overlay )。在美國專利申請號6 0 2 3 3 3 8中,Bare ket揭露了 一種新Page 7 1225577 Fifth, the description of the invention (2) Process, the square alignment mark is usually set at the edge of the wafer, and the square alignment mark on each deposited layer is larger than the square alignment mark on the deposited layer above it. The center position of each square alignment mark is determined by the x_y coordinate. By comparing the xy readings of the center position of each square alignment mark, the translation error of each sedimentary layer relative to other sedimentary layers can be obtained. error) 〇 In the conventional technology, every other week or every month, the technician performs manual feed back adjustment on the exposure tool according to the above translation error; however, the manual feedback adjustment The translation error cannot be corrected online in real time. Therefore, the alignment of each layer of the pattern lacks stability, which causes the exposure machine to produce unexpected translation errors. In addition, the different surface fluctuations of each deposition layer (topology), and wafer deformation caused by other processes (eg, annealing process), and other factors are accurate in alignment Impact; • Therefore, the above-mentioned problems must be solved with on-line real-time alignment correction (0 v e r 1 a y c0 r r c t i ο η) technology. In US Patent Application No. 6 2 1 8 2 0 0 B1, Che η et al. Demonstrated a method of aligning multiple layers in an automatic overlay correction using an automatic alignment bridge alignment system system). In the US Patent No. 6 1 2 7 0 7 5, H s u shows a method for checking the accuracy of a measuring instrument used to measure overlay. In U.S. Patent Application No. 6 0 2 3 3 3 8, Bare ket discloses a new

第8頁 1225577 五、發明說明(3) 式對位標記及其測量方法(a η 〇 v e 1 a 1 i g n m e n t m a r k pattern and measuring method) ° 發明内容: 本發明之主要目的,係提供一自動執行,並能確保積 體電路各沉積層正確對位的方法。 此外,亦產生一對位控制表(overlay control table ),可用於線上即時對位控制,同時亦可以手動方式進行 對位控制。 φ 藉此,本發明提供一智慧型對位控制系統(smart overlay control system)以達上述目的;該智慧型對位 控制系統包括複數個製程單元、一資料蒐集單元、一對位 伺服器與一裝置伺服器;其中,資料蒐集單元針對一製程 單元所執行之一道製程,測量執行一次該製程所產生之對 位誤差(overlay error);而對位伺服器對上述對位誤差 進行計算,並將對位誤差傳送給操作人員,藉此,操作人 員可以執行手動對位繞正(manual overlay correction );另一方面,對位伺服器可以將對位誤差傳送,至一智慧 型對位控制伺服器(smart overlay control servo),藉❿ 此,智慧型對位控制伺服器可以針對每一種製程產生一對 位控制表;同時,裝置伺服器針對每一製程單元所執行之 一道製程,操取前一層沉積層之矯正值(correction va 1 ue)以及取自智慧型對位控制伺服器之微調值(f i nePage 8 1225577 V. Description of the invention (3) Formula 1 ignment mark pattern and measuring method ° Summary of the invention: The main purpose of the present invention is to provide an automatic execution, and Method to ensure correct alignment of each deposited layer of integrated circuit. In addition, an overlay control table (overlay control table) is also generated, which can be used for online real-time alignment control. At the same time, it can also be manually controlled. φ In this way, the present invention provides a smart overlay control system to achieve the above purpose. The smart overlay control system includes a plurality of process units, a data collection unit, a pair of position servers and a Device server; among them, the data collection unit measures an overlay error generated by executing a process for a process performed by a process unit; the registration server calculates the above-mentioned registration error, and The registration error is transmitted to the operator, whereby the operator can perform manual overlay correction; on the other hand, the registration server can transmit the registration error to an intelligent registration control server (Smart overlay control servo). Therefore, the intelligent registration control server can generate a pair of position control tables for each process. At the same time, the device server executes one process for each process unit to access the previous layer. The correction value of the sedimentary layer (correction va 1 ue) and the fine-tuning value (fi ne

第9頁 1225577 五、發明說明(4) tuning value),藉以計算出該道製程之一對位矯正值 (overlay correct i on value),並另等jfcb對位矯正值傳送 至執行該道製程之製程單元。 除此之外,為了達到自動執行,同時確保積體電路各 沉積層正確對位之目的;本發明智慧型對位控制系統,可 以針對一製程單元之一系列製程,自動產生一對位控制 表;同時根據上述對位控制表計算出一對位矯正值,藉以 提供上述製程單元進行線上即時對位矯正,或是由操作人 員進行手動對位矯正。 關於本發明之優點與精神可以藉由以下的發明詳述及 __ 所附圖式得到進一步的瞭解。 實施方式: 本發明係關於一種智慧型對位控制系統,用以對對位 誤差,提供線上即時對位回饋調整;該系統同時提供一用 以解》、共整合式生產、線 (foundry fabrication mixing run )之方法,亦即,對不同形式或是需要不同對位矯正之製 程,可以集中由本發明之系轨統一控制。 如第一圖所示係本發明智慧型對位控制系統進行對位 4 控制之流程圖;首先,如步驟1 0,晶圓送入本系統中;線 上裝置伺服器(In-line Equipment Servo) 14確認所要進 行製程之參數;諸如:對位矯正值、曝光能量與對焦深度 (focus offset)等;並將此製程參數輸入一曝光機,即Page 9 1225577 V. Description of the invention (4) Tuning value), to calculate an overlay correct i on value of the process, and then to send the jfcb alignment correction value to the implementation of the process Process unit. In addition, in order to achieve the purpose of automatic execution and at the same time ensure that the deposited layers of the integrated circuit are correctly aligned; the intelligent alignment control system of the present invention can automatically generate a pair of alignment control tables for a series of processes in a process unit ; At the same time, a pair of alignment correction values are calculated according to the above-mentioned alignment control table, so as to provide the above-mentioned process unit for online real-time alignment correction, or manual alignment correction by the operator. The advantages and spirit of the present invention can be further understood through the following detailed description of the invention and the attached drawings. Embodiments: The present invention relates to an intelligent alignment control system for registering alignment errors and providing real-time online alignment feedback adjustment. The system also provides a solution for solution, co-integrated production, and line (foundry fabrication mixing). The method of run), that is, the processes of different forms or different alignment corrections can be centrally controlled by the system of the present invention. As shown in the first figure, it is a flowchart of the alignment control of the intelligent alignment control system of the present invention. First, as in step 10, the wafer is sent to the system; In-line Equipment Servo 14 Confirm the parameters of the process to be performed; such as: alignment correction value, exposure energy and focus offset, etc .; and enter this process parameters into an exposure machine, that is,

第10頁 1225577Page 10 1225577

圖中所示之製程單元16,以執行微影製程。 圖中方塊2 0係本發明智慧型對 隹®-兮次姓諮隹抑-: 對位控制系統之一資料蒐 μ τ τ ν 對位測量器(Ο v e r 1 a yThe process unit 16 shown in the figure is for performing a lithography process. Box 2 0 in the figure is the intelligent alignment of the present invention 兮 ®- 西 次 姓 隹 隹-: Data search of one of the alignment control systems μ τ τ ν Alignment measuring device (Ο v e r 1 a y

Measurement Tool) 2 ^ . A , · 0 、 n , ^ T位刀析伺服器(OverlayMeasurement Tool) 2 ^. A, · 0, n, ^ T position analysis server (Overlay

Analysis Servo) 24;其中,料 #、Βί θ 對位測量器2 2針對每一沉積 層之對位標記進行測量,而對位分析伺服器24擷取上述對 位測量器22之測量資料,藉以形成資料列(raw data); 上述資料荒集單元2 0係連接至—資料執行單元3 〇以提供資 料。 資料執行單元30包括一對位工具伺服器(〇verlayAnalysis Servo) 24; Among them, the material #, Βί θ alignment measurement device 22 measures the alignment marks of each deposited layer, and the alignment analysis server 24 captures the measurement data of the alignment measurement device 22, thereby Raw data is formed; the above-mentioned data collection unit 20 is connected to the data execution unit 30 to provide data. The data execution unit 30 includes a pair of bit tool servers (〇verlay

Tool Servo) 32與一製程資訊伺服器(Lot Information Servo) 34 ;其中,對位工具伺服器32係擷取來自對位測量 器2 2之測量資料,過濾異常之測量資料並將該測量資料傳 送至一智慧型對位控制伺服器(Smart Overlay Control Servo),40,同時,對位工具伺服器32亦可以將測量資料傳 送至一製程追蹤系統(Lots Tracking System)(未圖示 ),例如P R〇Μ I S。 該智慧型對位控制伺服器4 0係針對每一種形式之製 程,分別自動產生依該對位控制表;亦即每一對位控制表 係針對一特定微影技術、一特定沉積層與一特定曝光機之 $ 組合;而每一沉積層之對位狀態C η,係根據前一沉積層之 對位橋正值加上前一沉積層之微调值计鼻獲付。 表1 - 1係一智慧型微影對位控制調整值之計算模式。Tool Servo) 32 and a process information server (Lot Information Servo) 34; among them, the alignment tool server 32 captures measurement data from the alignment measuring device 22, filters abnormal measurement data and transmits the measurement data To a Smart Overlay Control Servo, 40, at the same time, the registration tool server 32 can also send measurement data to a Lots Tracking System (not shown), such as PR OM IS. The intelligent alignment control server 40 is for each type of process, and automatically generates a corresponding alignment control table; that is, each alignment control table is for a specific lithography technology, a specific deposition layer and a The combination of $ for a specific exposure machine; and the alignment state C η of each sedimentary layer is paid according to the positive value of the alignment bridge of the previous sedimentary layer plus the trimming value of the previous sedimentary layer. Table 1-1 is a calculation mode for the adjustment value of an intelligent lithography alignment control.

第11頁 1225577 五、發明說明(6) 製 程η Cn=Pn+Fn-1 On Rn η = :1 Cl=Pl+k 01 Rl = K-01 η = :2 C2二P2+F1 02 R2 = Fl-02 η = =3 C3=P3+F2 03 R3 = F2-03 n = :4 C4-P4+F3 04 R4 = F3-04 η: :5 C5二P5+F4 05 R5 = F4-05 η: :6 C6-P6+F5 06 R6 = F5-06 η = =k Ck=Pk+Fk-l Ok Rk 二 Fk- 1 -〇k η: =k + 1 Ck+1 二Pk+l+Fk 〇k+l Rk+l=Fk-0k+l 製 程η Fn η: =1 F1=R1 η: =2 F2 = l/2氺(R1+R2) η: :3 F3=l/3氺(R1+R2+R3) η: =4 F4=1/3*(R2+R3+R4) η: =5 F5二1/3氺(R3+R4+R5) η: =6 F6=l/3氺(R4+R5+R6) η: =k Fk=l/3*(Rk-2+Rk-l+Rk) η: = k+l Fk+l=l/3*(Rk -1+R2 + Rk+1 ) 其中,Cn係指第η道製程之對位矯正值; Ρ η係指第η - 1道製程之對位矯正值,Ρ 1 = 0 ; 〇η係指對位測量誤差值; Rn係指對位殘留誤差值;Page 11 1225577 V. Description of the invention (6) Process η Cn = Pn + Fn-1 On Rn η =: 1 Cl = Pl + k 01 Rl = K-01 η =: 2 C2 = P2 + F1 02 R2 = Fl -02 η = = 3 C3 = P3 + F2 03 R3 = F2-03 n =: 4 C4-P4 + F3 04 R4 = F3-04 η:: 5 C5 two P5 + F4 05 R5 = F4-05 η:: 6 C6-P6 + F5 06 R6 = F5-06 η = = k Ck = Pk + Fk-l Ok Rk Two Fk- 1 -〇k η: = k + 1 Ck + 1 Two Pk + l + Fk 〇k + l Rk + l = Fk-0k + l Process η Fn η: = 1 F1 = R1 η: = 2 F2 = l / 2 氺 (R1 + R2) η:: 3 F3 = l / 3 氺 (R1 + R2 + R3) η: = 4 F4 = 1/3 * (R2 + R3 + R4) η: = 5 F5 two 1/3 氺 (R3 + R4 + R5) η: = 6 F6 = l / 3 氺 (R4 + R5 + R6) η: = k Fk = l / 3 * (Rk-2 + Rk-l + Rk) η: = k + l Fk + l = l / 3 * (Rk -1 + R2 + Rk + 1) where , Cn refers to the alignment correction value of the ηth process; ρ η refers to the alignment correction value of the η-1st process, P 1 = 0; 〇η refers to the alignment measurement error value; Rn refers to the alignment Residual error value

第12頁 1225577 五、發明說明(7) F η係指依據本發明智慧型對位控制系統,獲得之微調 值,在第一道製程之微調值F 1係該道製程之對位殘留誤差 值R1 ;而第二道製程之微調值F 2係該道製程之對位殘留誤 差值R 2與前一道製程對位殘留誤差值R 1之平均;後續每一 道製程之微調值係該道製程之對位殘留誤差值,與之前兩 道製程對位殘留誤差值,三者之平均。 Κ係指平均製程偏差值,而在第一道製程中將Κ設定為 0 ° 除此之外,Ρ η值係擷取自於製程資訊伺服器3 4 ;而若 是執行手動對位矯正,上述對位控制表係被傳送至該製程 資訊伺服器3 4 ;反之,若是執行自動對位矯正,對位控制 表係被傳送至該智慧型對位控制伺服器4 0。 線上裝置伺服器1 4自該智慧型對位控制伺服器4 0取得 前一道製程之對位矯正值Ρη與微調值Fn-:l,藉以計算出該 道製程之對位矯正值C η ;同時,將此對位嬌正值C η傳送至 製程單元1 6 ;隨後,此對位矯正值Cn將被傳送至該智慧型 對位控制伺服器4 0,藉以作為下一道製程之Ρη。 本發明之技術係可應用於單一對位標記系統(S i n g 1 e A 1 i g n m e n t M a r k S y s t e m),或是多對位標記系統 (Multiple Alignment Mark System);在多對位標記系 統中,由於每一沉積層分別有其對位標記;因此,Pn值被 設定為0,亦即不考慮前一道製程之對位橋正值。 如第二圖所示,係一製程單元進行一道製程,同時搭 配本發明智慧型對位控制系統之流程圖;如步驟1 0 1,若該Page 121225577 V. Description of the invention (7) F η refers to the fine-tuning value obtained according to the intelligent alignment control system of the present invention. The fine-tuning value F 1 in the first process is the registration residual error value of the process. R1; and the fine-tuning value F 2 of the second process is the average of the residual error value R 2 of this process and the residual error value R 1 of the previous process; the fine-tuning value of each subsequent process is the average value of that process. The alignment residual error value is the same as that of the previous two processes. Κ refers to the average process deviation value, and in the first process, κ is set to 0 °. In addition, the value of η is obtained from the process information server 3 4; if manual alignment correction is performed, the above The alignment control table is transmitted to the process information server 3 4; otherwise, if automatic alignment correction is performed, the alignment control table is transmitted to the intelligent alignment control server 40. The online device server 14 obtains the alignment correction value Pη and the fine-tuning value Fn-: l of the previous process from the intelligent alignment control server 40 to calculate the alignment correction value C η of the process; Then, the alignment positive value C η is transmitted to the processing unit 16; then, the alignment correction value Cn is transmitted to the intelligent alignment control server 40 as the Pn of the next process. The technology of the present invention can be applied to a single alignment mark system (Sing 1 e A 1 ignment Mark System), or a multiple alignment mark system (Multiple Alignment Mark System); in a multiple alignment mark system, because Each deposited layer has its own alignment mark; therefore, the Pn value is set to 0, that is, regardless of the positive value of the alignment bridge of the previous process. As shown in the second figure, it is a flowchart of a process unit to perform a process and match the intelligent alignment control system of the present invention; as shown in step 101, if the

第13頁 1225577 五、發明說明(8) 製程單元1 6 (請參照第一圖)係第一次執行一特定型式製 程,如步驟1 0 3,將產生之一製程對位控制表,其中, P 1 = 0,隨後再進入步驟1 0 5 ;反之,若該製程單元1 6所執行 的並非新製程,將直接進入步驟1 0 5。 在步驟1 0 5中,線上裝置伺服器1 4自智慧型對位控制伺 服器4 0取得前一道製程之對位矯正值與微調值;而智慧型 對位控制伺服器4 0係自對位工具伺服器3 2取得對位控制 表;隨後,如步驟1 0 7,該線上裝置伺服器1 4計算出該道製 程之對位矯正值Cn,並將Cn傳送至製程單元1 6。 如步驟1 0 9,製程單元1 6根據上述Cn值執行該道製程; 同時,如步驟1 1 1,資料蒐集系統2 0針對該道製程,測量對 位標記,並將此測量資料傳送至對位工具伺服器3 2以更新 對位控制表。 藉由本發明智慧型對位控制系統,可以減少每一道製 程所花廣之時間,並且減少製程工程師的負擔;在實際測 試上,2 5 %以上之對位測量值,有三倍標準差以上之改善; 同時,由於對位誤差導致重做的比率也由0 . 5 %降低至0 . 3 °/〇 以下。 以上所述係利用較佳實施例詳細說明本發明,而非限 制本發明之範圍,而且熟知此類技藝人士皆能明瞭,適當 而作些微的改變及調整,仍將不失本發明之要義所在,亦 不脫離本發明之精神和範圍。Page 13 1225577 V. Description of the invention (8) The process unit 16 (refer to the first figure) is the first time to execute a specific type of process, such as step 103, a process alignment control table will be generated, of which, P 1 = 0, and then enter step 105; otherwise, if the process unit 16 is not performing a new process, it will directly enter step 105. In step 105, the online device server 14 obtains the alignment correction value and fine-tuning value of the previous process from the intelligent alignment control server 40; and the intelligent alignment control server 40 is self-aligned The tool server 32 obtains the alignment control table; then, in step 107, the online device server 14 calculates the alignment correction value Cn of the process, and transmits Cn to the process unit 16. As in step 10, the processing unit 16 executes the process according to the above Cn value. At the same time, as in step 11, the data collection system 20 measures the registration mark for the process and transmits the measurement data to the The bit tool server 32 updates the registration control table. With the intelligent alignment control system of the present invention, the time spent in each process can be reduced, and the burden on process engineers is reduced. In actual testing, the alignment measurement value of more than 25% has an improvement of more than three standard deviations. ; At the same time, the redo ratio is also reduced from 0.5% to below 0.3 ° / 〇 due to registration errors. The above is a detailed description of the present invention using preferred embodiments, rather than limiting the scope of the present invention, and those skilled in the art will understand that appropriate changes and adjustments will still be made without departing from the spirit of the present invention. Without departing from the spirit and scope of the invention.

第14頁 1225577 圖式簡單說明 圖示簡單說明: 第一圖係本發明智慧型對位控制系統進行對位控制之流程 圖。 第二圖係一製程單元進行一道製程,同時搭配本發明智慧 型對位控制系統之流程圖。 圖號說明: 4 1i 0 服 6 伺 .-_ 置元 裝單 上程 線製 2 元 單 集 蒐 料 資 對位測量器2 2 對位分析伺服器2 4 資料執行單元3 0 對位工具伺服器3 2 製程資訊伺服器3 4 智慧型對位控制伺服器4 0Page 14 1225577 Simple illustration of the diagram Simple illustration of the diagram: The first diagram is a flowchart of the alignment control of the intelligent alignment control system of the present invention. The second diagram is a flow chart of a process performed by a process unit and matched with the intelligent alignment control system of the present invention. Description of drawing number: 4 1i 0 server 6 server .-_ Set yuan installation order up-trip line system 2 yuan single set search data registration measurement device 2 2 registration analysis server 2 4 data execution unit 3 0 registration tool server 3 2 Process information server 3 4 Intelligent registration control server 4 0

第15頁Page 15

Claims (1)

1225577 六、申請專利範圍 申請專利範圍: 1. 一種對位控制系統,包括: 複數個製程單元; 一資料蒐集單元,用以測量一該製程單元進行一道製 程所產生之對位誤差值; 一對位工具伺服器,用以處理對位誤差資料,並將該 對位誤差資料傳送給一操作人員以進行手動對位矯正,同 時,亦可將該對位誤差資料傳送至一智慧型對位控制伺服 器,以自動進行對位橋正; 該智慧型對位控制伺服器,係針對每一種製程,分別 產生一對位控制表;以及 一裝置伺服器,係針對每一種製程,用以自該智慧型 對位控制伺服器擷取前一道製程之一對位矯正值與一微調 值,藉以計算出該道製程之一對位矯正值,並將該對位矯 正值傳送至該相關製程單元。 2 .如申請專利範圍第1項之對位控制系統,其中對該製程單 元進行該道製程而言,所形成之一沉積層的對位矯正值, 等於該沉積層之前一層沉積層的對位矯正值加上該前一層 沉積層的微調值,其中,該微調值係相當於之前一系列製 程對位誤差之平均值。 3 .如申請專利範圍第2項之對位控制系統,其中該對位控制 系統係搭配至多重對位標記系統,且對該製程單元進行該 道製程而言,該沉積層之前一層沉積層之對位誤差值係設 定為零。1225577 6. Scope of patent application Patent scope: 1. An alignment control system, including: a plurality of process units; a data collection unit for measuring the alignment error value produced by a process unit in a process; a pair Positioning tool server for processing registration error data and transmitting the registration error data to an operator for manual alignment correction. At the same time, the registration error data can also be transmitted to an intelligent registration control. A server to automatically perform alignment bridge alignment; the intelligent alignment control server, which generates a pair of alignment control tables for each process, and a device server, which is used for each process The intelligent alignment control server captures an alignment correction value and a trim value of a previous process, thereby calculating an alignment correction value of the process, and transmits the alignment correction value to the relevant process unit. 2. The registration control system of item 1 in the scope of patent application, wherein the alignment correction value of one of the deposited layers formed during the process of the process unit is equal to the alignment of a deposited layer before the deposited layer The correction value is added to the fine-tuning value of the previous deposited layer, wherein the fine-tuning value is equivalent to the average of the alignment errors of the previous series of processes. 3. The registration control system according to item 2 of the scope of patent application, wherein the registration control system is matched with a multiple registration mark system, and for the process of the process unit, the deposition layer is The registration error value is set to zero. 第16頁 1225577 六、申請專利範圍 4. 如申請專利範圍第1項之對位控制系統,其中該對位控制 表係針對一特定微影技術、一特定沉積層與一特定曝光機 之組合。 5. 如申請專利範圍第1項之對位控制系統,其中該對位控制 系統係搭配至單一對位標記系統。 6 . —種對位控制的方法,包括: 針對一製程單元之一系列製程,自動產生一對位控制 表;以及 矯正值,並即時 其中對該製程單 的對位矯正值, 值加上該前一層 於之前一系列製 其中該對位控制 製程單元進行該 對位誤差值係設 其中該對位控制 與一特定曝光機 ,其中該對位控 藉由該對位控制表自動計算出一對位 將該對位矯正值傳送至該製程單元。 7 .如申請專利範圍第6項之對位控制方法: 元進行該道製程而言,所形成之一沉積層 等於該沉積層之前一層沉積層的對位矯正 沉積層的微調值,其中,該微調值係相當 程對位读差之平均值。 8.如申請專利範圍第7項之對位控制方法 系統係搭配至多重對位標記系統,且對該 道製程而言,該沉積層之前一層沉積層之 定為零。 ,. 9 .如申請專利範圍第6項之對位控制方法 表係針對一特定微影技術、一特定沉積層 之組合。 1 0 .如申請專利範圍第6項之對位控制方法 制系統係搭配至單一對位標記系統。Page 16 1225577 6. Scope of patent application 4. For example, the registration control system of the first patent application scope, wherein the registration control table is a combination of a specific lithography technology, a specific deposition layer and a specific exposure machine. 5. The registration control system of item 1 of the patent application scope, wherein the registration control system is matched to a single registration mark system. 6. A method of alignment control, including: automatically generating a pair of alignment control tables for a series of processes of a process unit; and a correction value, and the alignment correction value of the process sheet is added in real time, and the value is added to the The previous layer is in the previous series. The registration control process unit performs the registration error value. The registration control and a specific exposure machine are set. The registration control automatically calculates a pair by the registration control table. The alignment correction value is transmitted to the process unit. 7. As for the alignment control method of the 6th scope of the patent application: For this process, one of the deposited layers formed is equal to the fine-tuning value of the alignment correction deposited layer of a deposited layer before the deposited layer. The fine-tuning value is the average of the equivalent range readings. 8. The registration control method according to item 7 of the scope of patent application. The system is equipped with a multiple registration mark system, and for this process, the deposition layer before the deposition layer is set to zero. 9. The registration control method according to item 6 of the scope of patent application is a combination of a specific lithography technique and a specific deposition layer. 10. The registration control method according to item 6 of the patent application scope is matched to a single registration mark system. 第17頁 1225577 六、申請專利範圍 11. 一種對位控制的方法,包括: 針對一製程單元之一系列製程,自動產生一對位控制 表;以及 藉由該對位控制表自動計算出一對位矯正值,並據以 進行一手動對位矯正製程或是一即時對位矯正製程。 1 2 .如申請專利範圍第1 1項之對位控制方法,其中對該製程 單元進行該道製程而言,所形成之一沉積層的對位矯正 值,等於該沉積層之前一層沉積層的對位矯正值加上該前 一層沉積層的微調值,其中,該微調值係相當於之前一系 列製程對位誤差之平均值。 1 3 .如申請專利範圍第1 2項之對位控制方法,其中該對位控 制系統係搭配至多重對位標記系統,且對該製程單元進行 該道製程而言,該沉積層之前一層沉積層之對位誤差值係 設定為零。 1 4 .如申請專利範圍第1 1項之對位控制方法,其中該對位控 制表係針對一特定微影技術、一特定沉積層與一特定曝光 機之組合。 1 5 .如申請專利範圍第1 1項之對位控制方法,其中該對位控 制系統係搭配至單一對位標記系統。 1 6 . —種對位控制的方法,包括: 在使用一曝光機進行曝光製程後,測量該曝光製程之 一對位誤差值; 針對以該曝光機進行之一系列曝光製程,以該每一曝 光製程之對位誤差值與其前一道製程之沉積層資訊,自動Page 17 1225577 6. Scope of patent application 11. A method for registration control, comprising: automatically generating a pair of registration control tables for a series of processes of a process unit; and automatically calculating a pair of registrations using the registration control table The alignment correction value is used to perform a manual alignment correction process or an instant alignment correction process. 1 2. According to the registration control method of item 11 in the scope of patent application, wherein for the process of the process unit, the alignment correction value of a deposited layer is equal to that of a deposited layer before the deposited layer. The alignment correction value is added to the fine adjustment value of the previous deposited layer, wherein the fine adjustment value is equivalent to the average of the alignment errors of the previous series of processes. 13. The registration control method according to item 12 of the scope of patent application, wherein the registration control system is equipped with a multiple registration mark system, and for the process of the process unit, the deposition layer is sunk before The registration error value of the stack is set to zero. 14. The registration control method according to item 11 of the scope of patent application, wherein the registration control table is directed to a combination of a specific lithography technique, a specific deposition layer and a specific exposure machine. 15. The registration control method according to item 11 of the patent application scope, wherein the registration control system is matched to a single registration mark system. 16. A method of alignment control, comprising: after using an exposure machine to perform an exposure process, measuring an alignment error value of the exposure process; for a series of exposure processes performed with the exposure machine, using each of the The alignment error value of the exposure process and the deposition layer information of the previous process are automatically 第18頁 1225577 六、申請專利範圍 產生一對位控制表;以及 藉由該對位控制表自動計算出一對位矯正值,並據以 進行一手動對位矯正製程或是一即時對位矯正製程。 1 7.如申請專利範圍第1 6項之對位控制方法,其中對該製程 單元進行該道製程而言,所形成之一沉積層的對位矯正 值,等於該沉積層之前一層沉積層的對位矯正值加上該前 一層沉積層的微調值,其中,該微調值係相當於之前一系 列製程對位誤差之平均值。 1 8 .如申請專利範圍第1 7項之對位控制方法,其中該對位控 制系統係搭配至多重對位標記系統,且對該製程單元進行 φ 該道製程而言,該沉積層之前一層沉積層之對位誤差值係 設定為零。 1 9 .如申請專利範圍第1 6項之對位控制方法,其中該對位控 制表係針對一特定微影技術、一特定沉積層與一特定曝光 機之組合。 2 0 .如申請專利範圍第1 6項之對位控制方法,其中該對位控 制系統係搭配至單一對位標記系統。Page 18 1225577 6. The patent application scope generates a pair of registration control table; and the pair of registration correction value is automatically calculated by the registration control table, and a manual registration correction process or an instant registration correction is performed accordingly. Process. 1 7. The alignment control method according to item 16 of the scope of patent application, wherein for the process of the process unit, the alignment correction value of a deposited layer is equal to that of a deposited layer before the deposited layer. The alignment correction value is added to the fine adjustment value of the previous deposited layer, wherein the fine adjustment value is equivalent to the average of the alignment errors of the previous series of processes. 18. The registration control method according to item 17 of the scope of patent application, wherein the registration control system is matched with a multiple registration mark system, and φ is performed on the process unit. For this process, the deposition layer is one layer before The registration error value of the deposited layer is set to zero. 19. The registration control method according to item 16 of the patent application scope, wherein the registration control table is directed to a combination of a specific lithography technique, a specific deposition layer and a specific exposure machine. 20. The registration control method according to item 16 of the patent application scope, wherein the registration control system is matched to a single registration mark system.
TW92120390A 2003-07-25 2003-07-25 Smart overlay control TWI225577B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW92120390A TWI225577B (en) 2003-07-25 2003-07-25 Smart overlay control

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW92120390A TWI225577B (en) 2003-07-25 2003-07-25 Smart overlay control

Publications (2)

Publication Number Publication Date
TWI225577B true TWI225577B (en) 2004-12-21
TW200504479A TW200504479A (en) 2005-02-01

Family

ID=34588305

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92120390A TWI225577B (en) 2003-07-25 2003-07-25 Smart overlay control

Country Status (1)

Country Link
TW (1) TWI225577B (en)

Also Published As

Publication number Publication date
TW200504479A (en) 2005-02-01

Similar Documents

Publication Publication Date Title
US20110051150A1 (en) Unique mark and method to determine critical dimension uniformity and registration of reticles combined with wafer overlay capability
US9513565B2 (en) Using wafer geometry to improve scanner correction effectiveness for overlay control
TWI685726B (en) Method for controlling positioning of a substrate and method for determining a position of a feature referenced to a substrate
JP2002064046A (en) Method and system for exposure
JPH10163286A (en) Semiconductor device manufacturing apparatus
TW200534056A (en) A novel method to simplify twin stage scanner ovl machine matching
CN108333881A (en) A kind of splicing adjustment method applied to write-through exposure machine
JP2000133579A5 (en)
US6309944B1 (en) Overlay matching method which eliminates alignment induced errors and optimizes lens matching
JP2011066323A (en) Method for correction of exposure treatment
TWI246734B (en) A method for monitoring overlay alignment on a wafer
TWI225577B (en) Smart overlay control
CN108490746A (en) A kind of photoetching alignment mark and its alignment methods
CN111505907B (en) Calibration method for positioning error of workpiece table
JP2002057103A (en) Exposure method for manufacturing semiconductor device
US6868301B1 (en) Method and application of metrology and process diagnostic information for improved overlay control
US7031794B2 (en) Smart overlay control
JPS5927525A (en) Alignment method
KR20010058692A (en) Method for correcting an overlay parameters of a semiconductor wafer
JP2002134397A (en) Photomask, semiconductor device, method for exposing semiconductor chip pattern and chip alignment accuracy inspecting device
JP2001297966A (en) Exposure method, exposure system, projection aligner, manufacturing method of semiconductor device, semiconductor manufacturing factory, and method for maintaining projection aligner
CN113359399B (en) Exposure method and exposure system
TW201913241A (en) Alignment error compensation module, alignment error compensation calculating system, and lithography device subjecting the alignment machine to alignment correction compensation by utilizing the mis-alignment compensation parameter
US9964866B2 (en) Method of forming integrated circuit
JP2001319858A (en) Alignment-mark position measuring method, pattern exposure system, semiconductor device manufacturing method, semiconductor manufacturing plant, and pattern exposure system maintaining method

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees