TWI223848B - Method and system to provide electrical contacts for electrotreating process - Google Patents

Abstract

Systems and methods to provide electrical contacts to a workpiece to facilitate electrotreating processes, including electroplating and electroetching processes are presented. A system for electrical contact with a conductive layer on a front surface of a wafer at a front edge surface of the wafer during processing of the wafer, the wafer being held by a wafer carrier, the system comprising: at least one contact member that has electrical contact with the conductive layer at the front edge surface of the wafer, wherein relative rotational motion between the at least one contact member and the front edge surface of the wafer cause the at least one contact member to electrically contact different parts of the front edge surface of the wafer at different times; and lateral motion of the wafer, which occurs while the relative rotational motion is maintained, and a corresponding lateral motion of the at least one contact member occur in synchronism, thereby maintaining the electrical contact during the lateral motion of the wafer.

Description

1223848 发明 Description of the invention (The description of the invention should be made clear: the technical field to which the invention belongs, prior art, content, implementation, and early description) [Technical field to which the invention belongs] Field of the invention The present invention relates generally to semiconductor integrated circuit technology. In particular, 5 is related to an electro-processing technique applied to the entire surface of a work piece such as plating and electro-etching. Background of related technologies such as integrated circuits. Conventional semiconductor devices usually include a semiconductor substrate, usually a silicon-based material, such as an insulating interlayer formed in most of the order by most of the dioxide, and made of conductive materials. Into a conductive path or interconnection. At present, copper and steel alloys as interconnecting materials have received considerable attention because of their superior electromigration and low impedance characteristics. The 7 interconnections are usually formed by filling most components or recesses, such as copper 5 conductors, and the components or recesses are etched into the insulating intermediate layer by a metallization process. . The preferred method for the steel metallization process is to electrically enclose the carcass in a multi-layered network. The surface of the substrate is bristled with hairs extending to the ground. The components of the contacts are connected by incoming calls. '1 In a typical interconnection process, first, an insulating layer is formed on the material, and then a patterning and etching process is performed to form components such as female trenches, arts, and through holes in the insulating layer. Then, the electric copper is used to fill the two components. In these electric mining processes, the wafer is placed on the wafer with the cathode of the counter electrode, and the voltage is applied to the surface of the wafer. The electrolyte wets both the wafer surface and the electrode. The voltage is typically applied using contacts around the periphery of the wafer. The contacts are often electrically sealed and insulated from the electrolyte by a fixture covering the periphery of the wafer surface. The fixture prevents Copper is deposited on the contacts but it also prevents copper from being deposited along the periphery of the wafer and causes loss of significant space on the wafer. In the semiconductor industry, this unused or wasted wafer area is called an edge exclusion area. In the semiconductor integrated circuit industry, efforts have been made to reduce the margin exclusion area on the wafer. Once the electric ore is finished, the comparison is performed-chemical mechanical polishing (CMP) step, an electro-etching step (or electro-polishing) or engraving step, or a combination of these steps' to remove excess copper layer or copper cover layer and other A conductive layer over the top surface of the substrate. This process electrically insulates the copper deposited in the various components on the wafer and thus forms the interconnect structure, and then repeats the interconnect process as many times as the number of interconnect layers required. In the electric money engraving process, both the material to be removed and a conductive electrode are immersed in the electric polishing or electric engraving solution. Generally, an anode (positive) voltage is applied to the material to be removed relative to the conductive electrode. With this applied voltage, the material is electrochemically dissolved and removed from the wafer surface. Whether using a CMp process, an etching process, or an electro-etching process, it is necessary to reduce the thickness of the copper cover layer that must be removed using these processes. The importance of overcoming this steel overlay problem can be confirmed by technological developments related to the deposition of flat and thin copper layers on the wafer surfaces. These planar deposition techniques are often referred to as electrochemical mechanical deposition (ECMD). In the planarization process, when a work piece surface and a work piece surface together are called 1223848 玖, a pad, a mask, or a spear of a device for explaining the invention (WSID), there is physical contact between them \ This relative WSID can be used when moving relative to, at least when such electrodeposition or electrode injury occurs. 5: The problem of excluding the area can be overcome by using the deposition technique of the material = surface. For example, the name "Shenzhen", which was declared on December 14, 2_, and was co-owned by the controversy of this invention. Electric contacts are created on round surfaces for finishing, 曰 ,、, method of front-side electroplating or electropolishing and dressing US Application No. 09/735 546 f #; + +, 唬, exposed to provide a complete surface 10 15 Electroprocessing technology. It should be noted here that electroprocessing refers to all electrochemical processes that are sometimes shot under different names. Therefore, electroprocessing includes, for example, electrodeposition or bonding, electrocutting or electropolishing, etc. .U.S. Application filed on January 17, 2001, and entitled "Method and Device for Using Two-Segment Mean Film with the Minimum Edge Exclusion Area on the Substrate" jointly owned by the assignee of the present invention No. 09 / 76〇, 757 discloses a method for forming a conductive layer on a semiconductor wafer without loss on the surface used for the power supply gas contact. In the examples cited in these claims, —The copper Z product or electric name on the wafer surface can make The electrical contacts are achieved by contacting the wafer in a slidable manner, that is, during the manufacturing process, a relative movement is generated between the contacts and the surface of the wafer, so that the material is deposited directly under the contacts. Area 20 is removed from or over the entire work surface. Although the foregoing electrical contacts are suitable, what is needed is to provide an improved contact structure that is denser than existing electrical contacts. [Summary of the Invention 3 Summary of the Invention 8 1223848] The preferred embodiments described herein include a system and method for providing electrical contacts to a work piece such as a semiconductor wafer for electrical processing, including power mining Engraving process with electric surname. The present invention provides an improved contact structure that provides greater density than conventional electrical contacts. 5 Brief description of the drawings' The foregoing and other features, characteristics, and advantages of the present invention can be better understood by the following detailed description when read together with the drawings, where: Figure 1 is-showing a preferred embodiment Perspective view of the electrical processing system _ 9 10 Figures 2 and 3 show the bottom and side views of the electrical processing system including the i-th figure including-pair of electrical contacts; Figures 4A to 4C show the first preferred embodiment Side views of the contact members of the electrical processing system of Figures i to 3; Figures 5A and 5B are diagrams showing the interaction between the contact members of Figures 4A to 4C and the work pieces of Figures i to 15; Figures 6A to 6C are side views showing the contact members of the φ electric processing system of the second preferred embodiment and Figures i to 3; Figures 7A and 7B are the third preferred embodiment and i to 3 FIG. 9 is a side view of a contact member of the processing system; FIG. 20 and FIG. 8 show a side view of a contact member of the fourth preferred embodiment and FIG. 43 of the electrical processing system; FIG. 9A shows The fifth preferred embodiment is a side view of a contact member of the electrical processing system of Figs. I to 3; Figs. 9B to 9D show 9A The interaction of the contact member of FIG. 9 Nine working member of the invention is described in FIG. 1 to 3; line of FIG. 10A and 10B show 1

The installation structure of the contact member of a closed object; the side of the electrical processing system of Fig. 1 The fixed contact and a side including the 11A and 11C diagrams respectively show the side of the electrical processing system of Fig. 1 and Fig. 1

Detailed side view; Fig. 11D shows another embodiment of a bent contact member, and Figs. 12A and 12B show a side view and a bottom view of the electric processing system of Fig. I, respectively, and the electric processing system includes a pair of vertical A moving contact and a contact member mounting structure; and 13A and 13B are diagrams showing Embodiment 15 of the present invention using a rear contact. [Embodiment] Detailed description of the preferred embodiments The present invention will be described in detail with reference to the accompanying drawings, which are provided as embodiments of the present invention. 20 Now, referring to FIG. 1, it is a perspective view showing an electric processing system 10G of a preferred embodiment. FIG. 1 schematically shows an electric processing system 100 that can implement two processes of electric money and electric rice carving. The electro-processing system of the present invention may be a person having planar electroplating and planar electro-etching, such as an electrochemical mechanical deposition (ECMD) or an electrochemical mechanical etching (EcmE) system. It should be noted here that these systems are 10 1223848. May be collectively referred to as an electrochemical machining (ECMPR) system. The ECMPR system 100 includes an electrode 102, a work piece 104 ′, and a work piece surface-acting device (WSID) 106. The Wsmi0 6 may be, for example, a mask, a mask plate, a pad, A clearer or suitable surface-acting 5 device. The WSID 106 may be above a recess or a cup 107, and a yaw / valley 108 fills the cup 107 and contacts the electrode 102 and the work piece 104. If electroplating is desired, or both electroplating and electropolishing are desired, the solution 108 will usually contain various forms of ions to be deposited on the metal and additives to form a good quality film. For electric mining or electroplating and etching, a copper plating solution may be, for example, a copper sulfate solution with additives commonly used in industry. However, if only electropolishing is to be performed, the solution 108 used may be a typical electroetching / polishing solution in the form of ions that do not contain various materials to be etched. For copper electroplating, a solution containing an acid such as phosphoric acid is common. The work piece 104 may be, for example, a silicon wafer to be electroplated with a conductive metal, preferably copper or a copper alloy. The wafer 104 includes a front surface 109 to be electroplated copper and a bottom® 110 to be held by a carrier head ill. The carrier head lu is rotated by a shaft 112 or a mandrel to rotate the shaft. 112 through a non-rotating shaft housing 113 movably connected to a supporting structure (not shown). The shaft housing can be moved. 20 shaft 112 and the carrier head lu 3 move and the carrier head U1 moves in the z or X direction. The WSID106 includes a top surface 4 and a bottom surface 5 and most extensions. A passageway 8 or 8 between the top and bottom surfaces 114, 115. The channels 118 may be of any material, size, or any pattern may be formed on the WSID 106 for better film uniformity. All the shapes of the channels that can be connected to the wafer 104 and the electrical 11 1223848 发明, invention pole 102 can be used, although in the first figure, the ™ ° 6 has a -rectangle, it can be formed into any geometry shape. The implementation of various masks is also disclosed in US Patent Application No. 09 / 960,236, which is also assigned to the same assignee as the present invention, and was named "Stencil Structure," in September 20, 2010. For example, ίο As mentioned earlier, the electrical processing system 100 can perform a flat or non-planar power mine and a flat or non-planar power _ 'According to this, if a non-planarization process is selected, the wafer before 1G4 The square surface is placed near the top surface 114 of the Wei surface, but it is not in contact with it, so it can be used for non-planar metal deposition. In addition, if the planarization process is selected, the front surface of the wafer 104 109 touches the top surface of the WSIDi〇6 and 15 becomes the frequency of the present invention. When the town solution with the arrow ⑽㈣ is transmitted through the Tong 118 Temple, the wafer 104 moves and the front surface 109 The top surface 114 is in contact with or near the top surface of Wsim0. The wafer 104 can be rotated clockwise or counterclockwise, or it can be moved laterally along the X axis of the WSID 106, or it can be rotated and moved laterally. Applied between the wafer 104 and the electrode 102 And in the case of a solution 1G8 that fills these channels 118, the metal such as copper is removed on the front surface 109 of the wafer 104 or etched away by electricity. However, it should be noted here that The aforementioned rotation and movement of the wafer 104 is performed under the assumption that the WSID 106 is fixed. It should be understood here that the system 100 as described above will move the wafer or the WSID, or both of them 'This produces the same relative movement effect. However, for the sake of explanation, the present invention is as described above and will continue to be explained with the wafer movement 12 20 1223848 玖, invention description. 5 10 Brother 2 and 3 The bottom view and the side view of the electrical processing system 100 including the first pair of electrical contacts are shown in Fig. 1. As shown in Fig. 20, the anode or cathode electrical house can be When the wafer 104 is moved horizontally, that is, when it is moved laterally, rotated, or rotated and moved laterally, it is applied by the electrical contact 116 that contacts the exposed edge 12 of the front surface of the wafer 104. The electrical Contact 116 is via electricity, line 121 fish — The source terminal (not shown) is connected. According to the principle of the present invention, the electrical contact 116 may include a heading or a bidirectional contact member. As shown in FIGS. 4A to 5B, these contact members are used when the wafer is aligned. The situation is best when turning in the clockwise or counterclockwise direction, but, as shown in Figures 6A to 9D, it is better to show the contact members for those who rotate in both directions. See also Figures 10A to 12A and This system will be explained more fully below. The electric contact 15 gas contact 116 can also be used as a fixed, horizontally and vertically movable person. Sections 4A to 4 (: The figure shows the contact member 122A, coffee and section FIG. 3 is a diagram of the first preferred embodiment of the electrical processing system. As shown in FIG. 4A, the contact members 122A, 122B include a base i24 and one or more contact elements 126. In A Guyi # ^ 20 In the man and the embodiment, the contact elements 126 are brushes made of a plurality of conductive bristles 128 or wires. The bristles 128 may be made of, for example, a "flexible alloy wire", a pt alloy wire, or a stainless steel wire, and the base m may be made of copper, stainless steel, titanium, or the like or coated as a brush described below. The brushes 126 are made of a conductive material that does not react with the solution used and prevents Cu plating when used for deposition, or 13 1223848 发明, description of the invention Figure 6C shows another roller structure with roller 138B It has a circular contact surface 150. Similar to the above-mentioned roller 138A, the roller 138B is held between the first and second halves of the base frame 140 by a plurality of pins 146. The circular contact surfaces 15 of the four rollers 13 8B allow them to contact the surface of the wafer 104 at an angle 5. In both structures, the rollers 13 8A, 13 8B may be provided with appropriate biasing mechanisms to increase their contact force with the wafer surface. These biasing mechanisms may be, but are not limited to, most springs disposed near the pins 146 and biasing the rollers 138A, Π8B toward the wafer 104. These biasing mechanisms also help the rollers 138a, 10 13 8B move smoothly on the surface of the wafer 104. Figures 7A and 7B are diagrams showing a second preferred embodiment of the contact member 152 and the electrical processing system 1000 of Figures 1-3. Figures 7A and 7B show a base 154 and a contact element 156. Of contact member 152. In this embodiment, the contact members 56 {a ring-shaped contact 15 having a ring-shaped configuration, and the ring-shaped contact 156 can be connected to the base 154 through the bottom 158 of the contact. In this embodiment, the upper part 1 of the contact 156 is preferably flat, and the ring-shaped contact is physically and electrically connected to the wafer surface via the upper part 160 when it is placed on the wafer. Contact. The ring of the ring-shaped contact 156 increases the contact force when it is placed on the delta wafer by the spring force that pushes against the wafer. As shown in the figure, in another ... In the coin-shaped contact 156, the upper portion 162 may have a curved or convex shape. The ring-shaped contact may be made of a conductive wire, a strip, or a flat member. The base 154 is preferably made of a conductive material. It should be noted here that the fault in item 7A "B may be a hollow ring 'or there may be a ring 16 1223848 in the ring. The invention shows that the chance of the edge 120 having a scar is smaller. Each contact member is composed of a plurality of beams, preferably 5 to 20 beams and at least 1G beams, and if a wire having a thickness of 0 002 central hours is used, each beam has a range between 2 " 300. , And with a plurality of independent lines that are better in the range of ⑽ to. The brushes are preferably inclined at an angle between 60 degrees and 45 degrees is the best, as shown in Figures 4 and 4B, but can also be placed perpendicular to the upper surface ⑻ of the base 178, such as Figure 9A.

As shown in FIGS. 9B to 9D, the contact member 176 can be used with a wafer moving in any direction. As shown in 帛 9B, the wafer 1Q4 approaches and contacts the wafer when rotated counterclockwise. At 180, the brush 180 is bent to the right. At this time, if the rotation direction of the wafer 104 must be changed, the wafer is first raised above the brush 180, as shown in FIG. 9. Also, the wafer 104 is rotated clockwise and the wafer 104 is close to the brush 18o, so that the brush can be bent to the left. 15 Please refer to Figures 1 to 3 again. As mentioned previously, the system 100 may include

Electrical contact structure for fixed, lateral or vertical movement. In addition, as mentioned above, each of these electrical contact structures may include the above-mentioned embodiment of the contact member. Figures 10A and 10B show a side view and a bottom view of the electrical processing system 10 () shown in Figure 丨, respectively, and the electrical processing system 100 includes a pair of fixed 20 contacts I82 and one with an enclosure 188 contact member mounting member. As shown in Figures 10A and 10B, the fixed contacts 182 may be combined with the system 100, and the fixed contacts 182 may be any of the specific contact components described in the above embodiments. The bracket portion 184 of the fixed contact 1 is connected to the fixed contact 182 and the enclosure 188 18 1223848 which surrounds the system 100, the invention description or the dagger can be fixed only to the cup 007. It should be understood here that, in this embodiment, the fixed contacts 182 are fixed relative to the WSID 106, and the fixed contacts 182 such as edges can be positioned near the WSID 106. . The fixed contacts 182, such as Hai, may be biased toward the wafer 104 by a spring-like biasing mechanism (not shown) to provide a better contact between the contacts 182 and the wafer 104. contact. Figure 10B shows the position of the fixed contacts 182 relative to the WSID106 and the wafer in a partial bottom view. When the wafer ι04 rotates clockwise or counterclockwise and moves laterally in the χ direction, the The isolating contact 182 contacts the exposed edge 120 of the wafer 104. For the sake of clarity, the electrical connection of these contact elements is not shown in any figure, and generally known devices and methods can be used to provide power to these contact elements. In this embodiment, the fixed contacts may have a predetermined length according to the size of the wafer, the size and shape of the WSID106, and the amount of lateral movement of the wafer on the WSID, and the length of the fixed contacts It should be adjustable so that the exposed edge 12G is in continuous contact with at least some fixed contacts. In addition, as shown in FIG. 10A, the height of the fixed contacts may preferably be above the liquid level of the solution directly above the wSID, so the wafer ι4 contacts the contacts and is on the wafer. Before there is any contact between 104 and the solution, a voltage can be applied from the cup 107 to the wafer 104 via the contacts. Figures 11A and 11C show the electrical processing system of Figure 1 respectively. A side view and a bottom view, and the electrical processing system 100 includes a pair of laterally moving contacts 19G and a contact member mounting structure of the -including-guide mechanism, and the laterally moving contacts 19 may be the above-mentioned implementation. Any of the details described in the example 19 1223848 发明, the invention explains what specific contact members. Figure ΠB is a detailed side view showing the-part of the structure of the UA and uc diagrams. As shown in the UAi uc diagram, a lateral movement of 1 point 19G can be combined with the system ⑽, the bracket part 192 Connect this horizontally moving contact with the ―guide mechanism‖. As shown in the cross-sectional view of FIG. 15, the guide mechanism 194 is so as to—accommodate the guide of the -end of the bracket portion 192 and move the _end of the bracket portion 192 along the rail m. . The lateral movement of the contact 190 is generated by a majority: the moving rod 195 fixed to the shaft housing 113 for a long time. When the carrier head is lowered, the lower ends of the rods 195 are detachably inserted into the bracket 192. The-end of the hole. When the load is weaker than the process moving laterally in the x direction, the rods 195 move the bracket 192 in the guide 194 and thus the contacts 190 move laterally with the wafer. Alternatively, the contacts 190 may be connected to a moving mechanism (not shown) controlled by a controller (not shown), and the controller may cause the movement of the contacts 19 to correspond to the carrier head The horizontal movement of 111, the contacts 190 can be biased towards the wafer 104 by a bomb (not shown) to obtain a relatively high conductivity between the contacts 910 and the wafer 104. . Figure 1c shows the position of the contacts 190 relative to the WSID 106 and the wafer in a partial bottom view. When the wafer 104 rotates clockwise or counterclockwise and moves laterally along the χ direction, The helium junction 190 continues to contact the exposed edge 120 of the wafer 104 by moving with the wafer 104. Therefore, they need not be as long as in the case of the fixed contacts in Fig. 10B, and they need not be straight. As shown in the embodiment shown in FIG. 11D of the contact 190A, the contacts 190A may have a bend following the contour of the wafer edge 20 20 玖, invention description 10 wafer 104 bias to The obtained H12B map between the contacts 196 and the wafer is shown in a partial bottom view, showing the positions of the contacts 196 relative to the Gu 106 and the wafer. When the wafer 1 4 When turning clockwise or counterclockwise and moving laterally in the x direction, the contacts 该等 continue to contact the exposed edges 暴露 of the wafer 1G4. In this embodiment, when the wafer 104 is placed on the carrier frame, the contacts 196 must be moved by a mechanism (not shown in g). After the placement, the crystals The circular contact is in physical contact with its surface and the process starts. Similar to the situation described in Figures UA and lie, when the wafer 104 rotates clockwise or counterclockwise and moves laterally in the x direction, the contacts are formed by ... Move and continue to contact the exposed edge ⑶ of the lens 104. Therefore, they need not be the same length as in the case of fixed contacts in the second figure, and they need not be straight. They may have a curved shape following the contour of the edge of the wafer. 15 20

Fig. 13A shows a side view of the electric processing system 100 of Fig. 1, and the electric processing system ⑽ includes-the rear side contact 202 and the connection member mounting structure connected to it, as shown in Fig. 13A. The side contact 202 can be combined with the system 100, and the back contact 202 can be any specific contact component detailed in the above implementation. In this implementation, the Crystal® 204 will have a conductive layer 206 ', usually a seed layer, and the conductive layer 206 extends from the front side 208 around the cut surface portion 21 to the rear side 212, so It is possible to maintain electrical contact between the Hai Hai wafer 204 and the rear contact lift from the rear side of the Hai Hai. In this embodiment, it is possible to connect and hold the contacts, the contact member of the point 202 'the rear side contact 2 009 Shijia A 202 bracket portion 198 can be connected to the shaft housing 22 1223848 发明, description of the invention体 113. As described above, the shaft housing 113 can move vertically with the carrier head in the z direction and laterally in the x direction. When the carrier head 111 moves vertically in the z direction during the manufacturing process, the contacts 196 maintain their positions along the exposed rear edge. In this embodiment, because the only relative movement between the contacts 196 and the wafer is rotation, this structure allows the operator to adjust at the contacts before performing the process. 0022 and the The pressure between the wafers reaches a desired fixed value and then the pressure is maintained at the desired value. The absence of relative movement between the contacts 2002 and the wafer 204 can reduce mechanical polishing. Alternatively, the contacts may be connected to a moving mechanism (not shown) controlled by a controller (not shown), and the controller controls the vertical movement of the carrier head in, and the contacts 2 2may_ Use a spring (not shown) to bias the wafer 204 to obtain better conductivity between the contacts 202 and the wafer 204. Alternatively, the contact member and the rear contact 202 may be disposed in the carrier head lu, so that once the 15 wafer 104 is placed on the carrier head HI, electrical contact can be established, as in the 13A The dashed line in the carrier head 1U is shown in the figure. It should be noted here that it is also possible to create contacts at the edge (cut surface) of the wafer. FIG. 13B shows another embodiment of a system for providing backside contacts. As shown, the WSID106A has a size of 20 inches larger than all dimensions of the wafer, so that the entire wafer is exposed to the wafer during the process. WSID106A and the process solution. The cleaning of violating contacts is also a consideration. On the one hand, conventional contacts are coated with Cu, pt, pd or other materials in many cases to ensure repeatability. But ’they will be destroyed by corrosion over time. If 23 ohms, invention description, X interface is fixed relative to the wafer, these rot buttons will change the uniformity, but as in the present invention-if the contact is originally moved to the wafer, then all The tangibility will reach the average. On the other hand, cleaning of these contacts can extend their life and increase contact uniformity. Methods for cleaning include 5 electropolishing during processing-wafers, and using electropolishing with or without electropolishing after processing a certain number of wafers when electropolishing the wafer 81, Alternatively, the contacts can be removed and cleaned from the system using most adjustments, electropolishing, or other conventional cleaning operations. Although the present invention has been described with particular reference to these preferred embodiments, those with ordinary knowledge in the technical field can easily understand that the form and details can be changed without departing from the spirit and scope of this Mao Ming And modifications, and the scope of the following patent applications may include these changes and modifications. [Brief description of the formula] Figure 1 is a perspective view 15 showing the electrical processing system of a preferred embodiment; Figures 2 and 3 are bottom views showing the electrical processing system of Figure 1 including-pair of electrical contacts, respectively. And the side of the side; .. Figures 4A to 4C show side views of the contact members of the first preferred embodiment and the electrical processing system of Figures 1 to 3; 20 5A and 5B show + Chu 1 λ r…, diagram of the interaction between the contact members in Figures 4A to 4C and the work pieces in Figures 3 to 3; Figures 6A to 6C show the second preferred embodiment and Figures 1 to 3 Side view of the contact member of the electrical processing system; Figures 7A and 7B show the third preferred embodiment and Figures 24 of Figures 1 to 3, a side view of the contact member of the electrical processing system; Figure 8A And FIG. 8B is a side view of the contact member of the electrical processing system of the fourth preferred embodiment and FIGS. 1-3; FIG. 9A is a view of the fifth preferred embodiment and the electrical positions of FIGS. I to 3 5B is a side view of the contact member of the physical management system; Figures 9B to 9D are diagrams showing the interaction between the contact member of Figure 9A and the work piece of Figures 1 to 3;

Figures 10A and 10B are a side view and a bottom view, respectively, of the electrical processing system of Figure j, and the electrical processing system includes a fixed contact and a contact member mounting structure including 10 a closure; 11A and 11C The figure shows a side view and a bottom view of the electric processing system shown in Figure ^, and the electric processing system includes a pair of laterally moving contacts and a contact member mounting structure including a guide mechanism; 15 detailed side views of a part of the mounting structure of the llc;

Fig. 11D shows another embodiment of a curved contact member; Figs. 12A and 12B show a side view and a bottom view of the electric processing system of Fig. 丨, respectively, and the electric processing system includes a pair of vertically moving contacts and a Contact member mounting structure; and-13A and 13B are diagrams showing an embodiment of the present invention using a rear contact. [Representative symbol table of the main components of the figure] 100... Electrical processing system 104... Workpieces; Wafer 102... Electrodes 106, 106A ... Workpiece surface action device 25 1223848 发明, Invention Description 107. .. cup 108 .. plating solution 109 .. front surface 110 .. bottom 5 111. carrier head 112 .. shaft 113 .. shaft housing 114 .. top surface 115 .. bottom surface 10 116 ... electrical contact 118 ... channel 120 ... exposed edge 121 ... wire 122A, 122B ... contact member 15 124 ... base 126..contact element 128 ... bristles 130 ... upper surface 136 ... contact member 20 138, 138 eight, 1386 ... contact element 139 ... flat contact surface 140 ... base 142 ... first frame half 144 ... Two frame halves 146 ... pin 150 ... circular contact surface 152 ... contact member 154 ... base 156 ... ring-shaped contact 158 ... lower 160, 162 ... upper 166 ... contact member 168. . Base 170... Contact element 172. Flexible member 174. Round upper part 176... Contact element 178... Base 180... Contact element 182... 188 ... Enclosure 190, 190A ... Lateral shift Moving contact 192 ... bracket part 194 ... guide mechanism; guide rail 195 ..

26 1223848 玖, 196. 198. 202. 204. Description of the invention Contact 206. Conductive layer Bracket part 208. Front side Back side contact 210 ... Cut section Wafer 212 ... Back side

27

Claims (1)

1223848 Application for Amendment to Selly Range No. 091132034 Patent Application Amendment to Patent Range Amendment Date: February 1, 1993 · When processing a wafer at a leading edge of the wafer and on the wafer A system for electrically contacting a conductive layer on a front surface, the wafer is held by a wafer carrier, the system includes ... at least one contact member, and is electrically connected to the conductive layer at the front edge surface of the wafer Contact, wherein relative rotation between the at least one contact member and the leading edge surface of the wafer causes the at least one contact member to be in electrical contact with different portions of the leading edge surface of the wafer at different times; and when maintaining the During relative rotation, the lateral movement of the wafer occurs synchronously with the corresponding lateral movement of one of the at least one contact member, thereby maintaining electrical contact during the lateral movement of the wafer. 2. The system according to item 丨 of the patent application scope, wherein the at least one contact member has a curved shape corresponding to a curvature of a leading edge surface of the wafer. 3. The system described in item 2 of the patent scope, wherein, in addition to the & movement of the wafer, any movement other than the rotation of the wafer is synchronized with any re-corresponding movement of the contact member Occurs, thereby maintaining electrical contact with the wafer. I: Please refer to the system described in item 1 of the patent scope, wherein in addition to the wafer I moving, any movement other than the rotation of the wafer occurs synchronously with any re-corresponding movement of the contact member to the This maintains electrical contact with the wafer. 28 1223848 Patent application scope 5. The system as described in the “Application Patent Scope 帛] item, wherein the at least one connection ^ 5 base support member and at least one connection with the base support member κ — μ , The at least one contact element maintains continuous electrical contact with each exposed edge of the work surface; and the at least-contact member is mechanically combined with the wafer carrier. 6. As described in item 5 of the scope of patent application The system, wherein: the relative rotation is achieved by rotating the wafer carrier using a rotatable draw rod connected to the wafer carrier; and the at least-contact member and the wafer carrier-do not rotate the shaft The rod housings are mechanically coupled. 7. The system as described in item 6 of the scope of patent application, wherein the at least one contact member can be moved laterally relative to a work piece surface acting device, and the machining is performed on the surface of the WSJD and the wafer. Ground contact. 8. The system according to item 7 of the scope of patent application, wherein the at least one contact member is mechanically combined with a non-rotating shaft housing of one of the wafer carriers using a bracket, and the bracket is provided on a guide Mechanically, and the guide mechanism can move the at least one contact member laterally relative to the WS] [D and keep the at least one contact member corresponding lateral movement when the wafer starts lateral movement. 9. The system according to item 8 of the patent application scope, wherein the guide mechanism includes a guide rail, and the bracket is positioned so as to abut against the guide rail by a moving rod. The moving rod system is combined with the shaft housing. 29. Patent application scope 10. The system according to item 7 of the patent application scope, wherein the at least one contact member can be moved vertically relative to the WSID and the at least one contact member does not rotate. u. The system according to item 5 of the patent application, wherein the at least one contact member has a curved shape corresponding to a curvature of a front edge surface of the wafer. 12. The system according to item 1 of the scope of patent application, wherein the at least one contact member can move laterally with respect to the surface of the work piece (WSID), and during processing, the WSID and the wafer The surfaces are in physical contact. 13. The system of claim 12 wherein the at least one contact member has a curved shape corresponding to a curvature of a leading edge surface of the wafer. The w τ reading guide range 15 includes a brush that includes a bundle of conductive wires. 15. As described in item 14 of the scope of patent application, wherein the conductive wire of the brush contacts the front surface of the work piece at an -inclined angle, so that the work piece can rotate unidirectionally relative to the at least -contact member. 20 16. The system according to item 14 of the scope of patent application, wherein the conductive line of the brush is substantially perpendicular to the front surface of the work piece, so that the work piece can be bidirectionally positioned with respect to the at least one contact member. Rotate. 17. If the electric wire in the scope of the patent application is flexible, the component moves vertically. The system described in item 4 'wherein the guide of the brush makes the work piece less than the i-contact 30 1223848. Scope of patent 18. The system described in item i of the scope of patent application, wherein the point-to-point member includes a roller having a flat contact surface such that the roller is substantially perpendicular to the front surface of the work piece, and the work piece is Can rotate bidirectionally with respect to the at least-contact member. 5 19. The system according to item 1 of the scope of patent application, wherein the at least-contact member includes a roller, the roller having The contact surface is such that the roller can contact the front surface of the work piece, and the work piece can rotate bidirectionally with respect to the at least one contact member. 10 2 0. The system according to item 1 of the scope of patent application, wherein the At least-the contact member includes-a ring-shaped contact, the ring-shaped contact has an upper contact surface, and the ring-shaped contact can be closed when the front surface is formed with the work piece, and the work piece can be opposite to the work piece. At least-contact structure: bidirectional rotation. 15 21. The system described in item 1 of the patent application scope, wherein the at least -connected 2 member includes-a contact rod, which is supported by the base of most flexible members The components are combined, and the flexible members can be bent when establishing electrical contact with the regular surface of the work piece, and the work piece can be rotated in both directions relative to the at least -contact member. 20. The system as described above, wherein the contact rod has a circular upper contact surface, so that the contact rod can contact the front surface of the work piece to a certain degree. Inclination angle 23. Round 1: Use ::: The leading edge of the crystal plane and the The electrical connection of the conductive layer on one side of the crystal is held by a wafer carrier. The method includes: 4 曰 31 1223848 Pick up and apply for a patent. When processing the wafer, the at least one ^ ^ ^ a π maintains electrical contact between the point member and the conductive layer at the leading edge surface of the circle; while maintaining electrical contact, maintains the relative rotation between the contact member of the circle and the edge surface of the circle哕 said round eve a edge + make 4 at least one contact member touch; and 1 cut at different times electrical contact When the electrical contact is kept rotating with the phase in opposition, the wafer spectrum moves with the at least-contact The direction of the component is “circle direction”, corresponding to the movement of the check direction, and the electrical contact is maintained during the lateral movement of the wafer. 24. If the method according to item 23 of the patent application scope, further includes the following steps: = less-contact member relative _ work piece surface acting device (WSID); ^ direction movement, in which during the processing, the wsm and the wafer The surface contacts throughout. 25. The method of claim 24, claim 15 further includes the step of vertically moving the at least one contact member. 26. If the scope of the patent application is No. 23, < Wanfa, wherein the step of maintaining the electrical contact does not occur without rotating the at least one contact 7 & φ support member. 27. The method of claim 24 ^^, further comprising the step of vertically moving the at least one contact member with respect to the front surface of the wafer by 20 ^. 28. No. 23 of Shenqu's patent scope Electropolishing. 'Method' wherein the processing of the wafer is 29. Electrodeposition as described in the patent application No. 23. Method, wherein the processing of the wafer is 30. A system for lifting and contacting the electrically conductive back layer on the surface of the wafer after the wafer 32 1223848, and on the surface of the trailing edge It is electrically connected to a conductive front layer disposed on the front direction surface of the wafer via the conductive cut edge of the wafer, and the wafer is held by a wafer carrier. The system includes: 5 at least one contact The component is in electrical contact with the conductive back layer at the trailing edge surface of the wafer, and wherein relative rotation between the at least one contact member and the trailing edge surface of the wafer allows the at least one contact member to be in contact with the Different portions of the trailing edge surface of the wafer are in electrical contact at different times. 10 η • If the system of the scope of patent application No. 30, wherein the lateral movement of the wafer and the corresponding lateral movement of the at least one contact member occur simultaneously while maintaining the relative rotation, thereby maintaining the Electrical contact during lateral movement of the wafer. [5 32_ The system described in claim 31 of the patent application, wherein the at least one contact member has a curved shape corresponding to a curvature of a leading edge surface of the wafer. 33. For example, please refer to the system described in item 32 of the patent scope, in which any movement other than the wafer & movement to the 'Yanhai wafer rotation' corresponds to any re-correspondence to the > 〇 ^ contact member Movement occurs synchronously, thereby maintaining electrical contact with the wafer. The system described in item 31 of the Dagger Patent Scope, wherein, in addition to the wafer, moving in the direction, any movement other than the rotation of the wafer is synchronized with any re-corresponding movement to the contact member, thereby Maintain electrical contact with the wafer. 33 Pick up and propose a special range of 35 ·-a method for making electrical contact with the conductive back layer on the surface of the trailing edge of the wafer, and on the trailing edge surface through the conductive cutting edge of the wafer,彖 # 5 is connected to the conductive first 5 layers on the front surface of the wafer, and the wafer is held by a wafer carrier. The system includes: / at least-contact components Electrical contact with the conductive layer is maintained at the trailing edge surface of the wafer; and while maintaining electrical contact, relative rotation between the at least one contact member disk and the trailing edge surface of the 10 wafer is maintained, so that the at least one The contact member is in electrical contact with the trailing edge surface of the wafer at different times. 3 = The method of claim 35 in the scope of patent application, wherein when the electrical contact is kept relatively rotated, the lateral movement of the wafer and 15 pairs of steps occur, thereby maintaining the electrical contact while the material is moving. 37. If the method of patent application is %%, the method further includes the following steps: moving the at least one contact member laterally with respect to a work piece surface acting device (wsm), wherein when processing is performed, the WSID and the crystal The round surfaces make contact throughout. 20 38. The 37th < method of applying for a patent, wherein the size of the WSID is such that the WSID can be covered with the front surface of the wafer in full. 0 = Electrical conductivity of the wafer when the wafer is processed Layer system, the conductive layer has an edge surface on the front surface of the wafer '34 5 10 15 20 Patent application scope The system includes: at least-a contact member, and the conductive layer is at least on the wafer Electrical contact is made on the surface of the Qiongyuan, and the support supports…. The mountain contact components include-the base component and to>,-the contact element combined with the base support component, and at least-the contact element remains before the work piece Each exposed edge of the square watch is in continuous electrical contact and includes a brush, and the brush includes-a bunch of conductive wires contacting the front surface of the work piece at an oblique angle, so that the work piece can be single liL with respect to the at least one contact member. Rotating to the ground and during the processing, the relative rotation between the at least one contact member and the π-isotropic wafer enables the at least one contact member and a different portion of the edge surface of the wafer to be electrically charged. Contacts. 40. The system according to item 39 of the patent application scope, wherein the contact element includes a plurality of conductive wires that can each contact the front surface of the wafer at an oblique angle, so that when the front surface of the wafer is opposite the When lateral contact of the contact element occurs, it is ensured that at least one of the plurality of bundles of electrical wires is in electrical contact with the front surface of the wafer. 41. The system of claim 39, wherein the conductive line of the brush is flexible, so that the work piece can move vertically relative to the at least one contact member. 42. A system for electrically contacting a conductive layer of a wafer during processing, the conductive layer having an edge surface on a front surface of the wafer, the system comprising: at least-a contact member, connected to The conductive layer makes electrical contact at least on the edge of the wafer and the surface of the cymbal. The at least one contact member includes a base element, an application-specific brake range holding member, and a contact element combined with a base support member. The at least-contact element remains in continuous electrical contact with each exposed edge of the front surface of the work piece and includes a brush, and the brush includes a beam that contacts the front surface of the work piece and is substantially perpendicular to the front surface of the work piece. A conductive wire, so that the work piece can rotate unidirectionally relative to at least-the contact member, and the relative rotation between the at least one contact member and the wafer during guarding causes the at least one contact member and the crystal to rotate The different parts of the rounded edge surface are in electrical contact. 10 4 3 · = The system of item 42 of the patent application scope, wherein the contact element includes a plurality of beam guides that can each contact the front surface of the wafer approximately perpendicularly: the wire is used to make the front surface of the wafer opposite the When the contact element is laterally displaced, at least one of the plurality of bundles of electric wires is electrically contacted with the front surface of the wafer. 15. The system of claim 42 in which the conductive line of the brush is bent. The bow is curved so that the work piece can move vertically with respect to the at least one contact member. 45. A system for electrically contacting a conductive layer of a wafer during processing of a wafer, and the conductive layer has an edge surface on a front surface of the wafer, and the system includes: 20, at least one contact member 'It is in electrical contact with the conductive layer at least on the force edge surface of the wafer.' The at least one contact member includes a base support member and at least one contact combined with the base support member: a piece. The point element maintains continuous electrical contact with each exposed edge of the front surface of the work piece and includes a roller, and the 36 1223848 patent application scope roller has a contact surface that contacts the front surface of the work piece, so that the work piece can be opposed The at least-contact member rotates, and the relative rotation between the at least one contact member and the wafer during processing causes the at least one contact member to be in electrical contact with a different portion of an edge surface of the wafer. 46. The system according to item 43 of the patent application, wherein the contact surface of the roller is substantially flat and is substantially perpendicular to the front surface of the work piece in contact with the front surface of the work piece, so that the work piece can be unidirectional Turn. 10 47 · ^ Please refer to the system of the private item of the patent scope, wherein the contact element includes a plurality of rollers, each of which has a flat surface that can each be vertically contacted with the front surface 夂 of the work piece, thereby being the front of the work piece When lateral movement of the square surface with respect to the contact element occurs, it is ensured that at least one of the plurality of rollers is electrically contacted with the front square surface of the work piece. 48. If the system in the 45th area of the patent application, further includes a mechanical biasing mechanism, which is used to bias the roller against the front surface of the work piece. 49. In the 48th area, the system and system of the patent application The mechanical biasing mechanism 20 is a spring. 50. The system of claim 45, wherein the contact surface of the roller is round and contacts the front surface of the work piece, so that the work piece can rotate unidirectionally. 51. The system of item 50 in the scope of patent application, wherein the contact element includes 37 1223848. Most of the rollers in the scope of patent application, each roller has a circular surface that can each contact approximately perpendicularly to the front surface of the work piece Therefore, when lateral movement of the front surface of the work piece with respect to the contact element occurs, it is ensured that at least one of the plurality of rollers is in electrical contact with the front surface of the work piece. 52. The system according to item 50 of the patent application scope further includes a mechanical biasing mechanism for biasing the roller against the front surface of the work piece. The system of claim 52, wherein the mechanical structure is a spring. 54 ^ The system of claim 52 in which the roller system constitutes "1" contacts the front surface of the work piece at an inclined angle. 38 1223848 1/11 Figure 2