CN1316557C - Method and system to provide electrical contacts for electrotreating processes - Google Patents

Method and system to provide electrical contacts for electrotreating processes Download PDF

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Publication number
CN1316557C
CN1316557C CN 02823385 CN02823385A CN1316557C CN 1316557 C CN1316557 C CN 1316557C CN 02823385 CN02823385 CN 02823385 CN 02823385 A CN02823385 A CN 02823385A CN 1316557 C CN1316557 C CN 1316557C
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wafer
contact
member
contact member
surface
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CN 02823385
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Chinese (zh)
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CN1636266A (en )
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布伦特·M·巴索尔
霍玛约恩·泰列
博格斯洛·A·纳格斯基
塞浦利安·E·尤佐
杰弗里·A·博加特
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Asm纳托尔公司
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001Apparatus specially adapted for plating wafers, e.g. semiconductors, solar cells

Abstract

本发明提供了为工件提供电接触以便有助于电处理工艺的系统和方法,所述电处理过程包括电镀和电刻蚀工艺。 The present invention provides a system and method for providing an electrical contact to the workpiece to facilitate electrical treatment process, the electrical and electrical plating process includes an etching process.

Description

为电处理工艺提供电接触的方法和系统 Providing electrical contact to the electrical system and the processing was

技术领域 FIELD

概括而言,本发明涉及半导体集成电路技术,具体涉及诸如对工件的整个表面进行电镀和电刻蚀处理的电处理技术。 In summary, the present invention relates to a semiconductor integrated circuit technology, particularly relates to the entire surface of the workpiece, such as electrical plating processing and etching processing power.

背景技术 Background technique

诸如集成电路之类的传统半导体器件一般包括半导体衬底(通常是硅衬底)、多个按顺序形成的绝缘中间层(例如二氧化硅)、以及由导电材料制成的导电通路或互连。 Conventional semiconductor devices such as integrated circuits or the like typically includes a semiconductor substrate (typically a silicon substrate), a plurality of intermediate insulating layers (e.g., silicon dioxide) are sequentially formed, and conductive vias or interconnects made of a conductive material . 近来,铜和铜合金因其优良的电迁移和低电阻特性,在用作连接材料方面备受瞩目。 Recently, copper and copper alloys because of their excellent electromigration and a low resistance characteristics, much attention in terms of the material used as the connection. 互连一般是通过金属化工艺将铜之类的导体填充到绝缘中间层内刻蚀的特征图形(features)和空穴中而形成的。 Interconnected by a metallization process is typically copper or the like filled with conductor pattern features (Features) etched in the insulating interlayer and a hole formed. 铜金属化工艺的优选方法是电镀。 A preferred method is the copper metal plating process. 在集成电路中,相对衬底表面横向延伸着多层互连网络。 In an integrated circuit, the opposing surface of the substrate extending transversely multilayer interconnection network. 在连续层体内形成的互连利用通孔或触点之类的特征电学连接。 Interconnected using vias or electrical contacts such features formed in the body connected to a continuous layer.

在典型的互连制造工艺中,首先要在半导体衬底上形成绝缘层。 In a typical interconnect fabrication process, first insulating layer to be formed on the semiconductor substrate. 然后实施布图和刻蚀工艺,以便在绝缘层中形成诸如沟槽、焊盘(pads)和通孔等的特征图形。 Then embodiment patterning and etch processes to form a feature such as a trench pattern, a pad (PADS) and vias in the insulating layer. 接着,电镀铜以填充所有特征图形。 Then, copper electroplating to fill all features of a pattern. 在该电镀工艺中,要将晶片置于晶片载架上,在让电解质润湿晶片表面和电极的同时,相对电极向晶片表面施加阴极(-)电压。 In this plating process, to the wafer carrier placed on the wafer holder, the wafer surface so that wetting of the electrolyte and the electrode while the counter electrode is applied to the wafer surface of the cathode (-) voltage. 一般利用环绕晶片周边的触头施加电压。 Voltage is applied generally around the periphery of the wafer using the contacts. 触头一般是电学密封的,它通过覆盖晶片表面周边的夹具与电解质绝缘。 Electrical contacts are typically sealed, it is insulated from the electrolyte by covering the surface of the periphery of the wafer holder. 夹具阻碍铜淀积到触头上,但也防止铜沿晶片的周边淀积,进而引起晶片上重要区间的损耗。 Peripheral obstruction fixture copper deposited on the contact, but also to prevent deposition of copper in the wafer, thereby causing the loss of an important section of the wafer. 在半导体工业中,将该无用的或废弃的晶片区域称为排除的边缘。 In the semiconductor industry, the unwanted or waste areas of the wafer as an exclusionary edge. 在半导体集成电路工业中,总在力图降低晶片上的排除的边缘。 In the semiconductor integrated circuit industry, in an effort to reduce the total exclusion of the edge of the wafer.

一旦镀敷结束,就要实施化学机械抛光(CMP)步骤、电刻蚀(或电抛光)或刻蚀步骤、或者这些步骤的组合,以除去位于衬底上表面上的过量铜层或超载铜或其他导电层。 Once the plating is completed, chemical mechanical polishing is necessary (the CMP), or a combination of steps, etching electrical (or electro-polishing) or etching of these steps to remove the excess copper layer located on the upper surface of the substrate or copper overload or other conductive layers. 该工艺使淀积到晶片的各特征图形内的铜电绝缘,从而形成了互连结构。 This process allows the copper deposited on the electrically insulating each feature pattern within the wafer, thereby forming an interconnect structure. 然后重复互连工艺,重复次数与理想的互连层的层数一样多。 Interconnection process is then repeated, and the number of layers is repeated over as much of the interconnect layer.

在电刻蚀工艺中,要除掉的材料和导电电极都要浸到电抛光或电刻蚀溶液中。 Electrically etching process, to remove the conductive material and the electrode must be immersed in an etching or electro electropolishing solution. 通常要相对导电电极向欲除掉的材料施加阳极(正)电压。 Usually applying an anodic (positive) voltage to the material to be removed opposed conductive electrodes. 在所加电压的作用下,这些材料从晶片表面上以电化学方式溶解下来,然后被除掉。 In the role of the applied voltage, these materials from the wafer surface is electrochemically dissolved off, then is removed.

不管采用CMP工艺、刻蚀工艺或者电刻蚀工艺中的哪一个,理想目标都是降低要通过这些工艺除掉的超载铜的厚度。 Regardless of which, over the target CMP process, etching process or an electrical etching process is employed to reduce the thickness of the copper overloaded by these processes is removed. 克服铜超载问题的重要性已经通过涉及在晶片表面上淀积平而薄的铜层的技术发展得以证实。 The importance of overcoming the problem of copper overload has been confirmed by the development of a technique of deposition of a copper layer on a flat and thin wafer surface. 通常将该平面淀积技术称为电化学机械淀积(ECMD)。 The deposition technique is generally referred to as a planar electrochemical mechanical deposition (ECMD). 该平面工艺中,在至少一部分电淀积或电刻蚀工艺过程中采用统称为工件表面改变装置(WSID)的焊盘、掩模或扫除器(sweeper),此时工件表面与WSID之间物理接触或彼此靠近,并产生相对运动。 The planar process, the use of at least part of an electrical electrodeposition or etching process referred to as workpiece surface changing means (WSID) pads, mask or remove devices (Sweeper), this time between the workpiece surface and the physical WSID contact with or close to each other, and relative movement.

利用可为整个晶片表面淀积材料的淀积技术能克服排除的边缘问题。 Using edge deposition techniques may issue the entire wafer surface of the deposition material can overcome excluded. 例如,2000年12月14日申请的发明名称为“Method andApparatus For Making Electrical Contact To Wafer Surface forFull-Face Electroplating or Electropolishing”的美国申请09/735546(同样由本发明的受让人共有)的第一方面描述了一种实现全面电处理的技术。 For example, the name of the invention, December 14, 2000 application for "Method andApparatus For Making Electrical Contact To Wafer Surface forFull-Face Electroplating or Electropolishing" The first aspect of the US application 09/735546 (equally shared by the assignee of the present invention) of It describes a technique to achieve a comprehensive electrical process. 应当指出,电处理是指电化学工艺,有时也用其它名称来称呼。 It should be noted that the electrical treatment means electrochemical process, sometimes called by other names. 因此,电处理例如包括电淀积或镀敷、电刻蚀或电抛光等。 Thus, electrical treatment such as plating or electrodeposition comprising electrical etching or electropolishing like. 2001年1月17日申请的、发明名称为“Method and Apparatus forElectrodeposition of Uniform Film with Minimal Edge Exclusion onSubstrate”的美国申请09/760757(同样为本发明的受让人所共有)的一个方面描述了这样一项技术:在不因电触头而损耗表面区间的情况下,于半导体晶片表面上形成导电层。 January 17, 2001 application, the invention named "Method and Apparatus forElectrodeposition of Uniform Film with Minimal Edge Exclusion onSubstrate" US application 09/760757 (the assignee of the present invention is also common) describes one aspect of this one technique: without loss due to the electrical contact section of the surface, a conductive layer is formed on the semiconductor wafer surface. 按照这些申请中所列举的,利用以可滑动方式与晶片接触的电触头,能够在晶片表面上实现铜淀积或电刻蚀,即处理过程中触头与晶片表面之间产生相对运动,由此就能在整个工件表面(包括位于触头正下方的区域)上淀积材料或者从上面除掉材料。 According to these applications enumerated, using electrical contacts slidably contact with the wafer, it is possible to achieve etching or electrical deposition of copper on the wafer surface, i.e., relative movement between the contacts during processing the wafer surface, whereby the material can be deposited on the entire surface of the workpiece (including a region located immediately below the contact), or removal of material from the top. 虽然前面描述的电触头可以满足要求,但仍需改进触头结构,以提供比既定电触头更好的一致性。 Although the electrical contacts described above meet the requirements, but still need to improve the contact structure to provide better consistency than the established electrical contacts.

发明内容 SUMMARY

此处描述的目前优选的实施例包括与半导体晶片之类的工件表面实现电接触、以便有助于电处理工艺(包括电镀和电刻蚀工艺)的系统和方法。 Presently preferred embodiments described herein include electrical contact with the surface of the semiconductor wafer or the like, a system and method to facilitate electrical processing process (including electrical plating and etching process). 本发明提供了改进的触头结构,与传统电触头相比,它能提供更好的一致性。 The present invention provides an improved contact structure, as compared with conventional electrical contacts, it provides better uniformity.

在一个实施例中,提供了一种晶片处理过程中在晶片正面边缘处与晶片正面的导电层形成电接触的系统。 In one embodiment, a system for processing a wafer in electrical contact with the edge of the wafer front surface of the conductive layer of the front side of the wafer. 所述晶片由晶片载架保持。 The wafer held by the wafer carrier. 该系统包括至少一个触头部件,该触头部件在晶片的正面边缘处与所述导电层电接触。 The system comprises at least one contact member, the contact member in electrical contact with the conductive layer on the front surface of the wafer at the edges. 该至少一个触头部件和晶片正面边缘之间的相对旋转运动使得该至少一个触头部件在不同时刻与晶片正面边缘的不同部分电接触。 The at least one relative rotational movement between the contact member and the front edge of the wafer such that the at least one contact member is electrically in contact at different times in different parts of the front edge of the wafer. 在维持所述相对旋转移动的同时发生的晶片的横向移动、以及该至少一个触头部件的一个相应横向移动同步地发生,由此维持晶片横向移动过程中的电接触。 Maintaining the lateral movement relative rotational movement occurring while the wafer, and a corresponding at least one occurrence of lateral movement of the contact member in synchronization, thereby maintaining electrical contact with the wafer during the lateral movement.

在一个实施例中,提供了一种晶片处理过程中在晶片的正面边缘处与晶片正面的导电层电接触的方法。 In one embodiment, there is provided a method of processing a wafer at the front edge of the electrical wafer and the front conductive layer in contact with the wafer. 所述晶片由晶片载架保持。 The wafer held by the wafer carrier. 该方法包括:在晶片的处理过程中,在至少一个触头部件与晶片正面边缘上的导电层之间维持电接触。 The method comprising: during processing of the wafer, to maintain electrical contact between the at least one conductive layer on the contact member and the front edge of the wafer. 该方法还包括在维持电接触的同时,维持该至少一个触头部件与晶片正面边缘之间的相对旋转运动,从而使得该至少一个触头部件在不同时刻与晶片正面边缘的不同部分接触。 The method further includes maintaining electrical contact while maintaining the relative rotational movement between the at least one contact member and the front edge of the wafer, such that the at least one contact different portions of the contact members at different moments of the front edge of the wafer. 该方法还包括在维持电接触和相对旋转运动的同时,同步地发生晶片的横向移动和该至少一个触头部件的另一横向移动,由此维持晶片横向移动过程中的电接触。 The method further includes electrical contacts while maintaining the relative rotational movement and lateral movement and the contact member of at least one further lateral movement of the wafer takes place in synchronization, thereby maintaining electrical contact with the lateral movement of the wafer process.

在一个实施例中,提供了一种与晶片背面边缘上的背面导电层形成电接触的系统。 In one embodiment, the back side conductive layer provided on a back surface of the wafer in electrical contact edge forming system. 位于背面边缘的导电层通过晶片边缘的导电削面与晶片正面布置的正面导电层电接触。 Electrically conductive layer on the back of the front edge of the conductive layer through the conductive surfacing disposed to the front of the wafer contacting the wafer edge. 晶片由一晶片载架保持。 A wafer held by the wafer carrier. 该系统包括至少一个触头部件,它在晶片的背面边缘处与所述背面导电层电接触。 The system comprises at least one contact member, which at the back edge of the wafer in contact with the back surface of the electrically conductive layer. 该至少一个触头部件与晶片背面边缘之间的相对旋转移动使得该至少一个触头部件在不同时刻与晶片背面边缘的不同部分电接触。 The at least one relative rotational movement between the contact member and the back edge of the wafer such that the at least one contact member is electrically in contact at different times in different parts of the back surface of the wafer edge.

在一个实施例中,提供了一种与晶片背面边缘上的导电层形成电接触的方法。 In one embodiment, the conductive layer is provided on a back surface of the wafer edge method for forming an electrical contact. 位于背面边缘的导电层还连续布置到晶片正面以及晶片的边缘削面上。 Located on the back edge of the continuous conductive layer further disposed to the front edge of the cut surface of the wafer and the wafer. 晶片由晶片载架保持。 Wafer held by the wafer carrier. 该方法包括在至少一个触头部件与晶片背面边缘处的导电层之间维持电接触,以及在维持电接触的同时,维持该至少一个触头部件与晶片背面边缘之间的相对旋转运动,由此使得该至少一个触头部件在不同时刻与晶片背面边缘的不同部分电接触。 The method includes maintaining electrical contact between the at least one conductive layer at the edge of the contact member and the back surface of the wafer, while maintaining electrical contact and to maintain the relative rotational movement between the at least one contact member and the back edge of the wafer, the this contact member such that the at least one electrical contact at different times with different portions of the wafer backside edge.

附图说明 BRIEF DESCRIPTION

在结合后面附图的同时,通过阅读以下详细描述将使本发明的前述和其他特征、方面和优点更加显明,附图中:图1表示依照目前优选的实施例的示范性电处理系统的透视图;图2和3分别表示包含一对示范性电触头的图1示范性电处理系统的仰视图和侧视图;图4A到4C表示依照目前优选的第一实施例、并依照图1到3的示范性电处理系统的示范性触头部件的侧视图;图5A和5B是表示图4A到4C的示范性触头部件与图1到图3的工件相互作用的视图;图6A到6C表示依照目前优选的第二实施例、并依照图1到图3的示范性电处理系统的示范性触头部件的侧视图;图7A和7B表示依照目前优选的第三实施例、并依照图1到图3的示范性电处理系统的示范性触头部件的侧视图;图8A到8B表示依照目前优选的第四实施例、并依照图1到图3的示范性电处理系统的示范性触头部件的侧视图; In conjunction with the appended drawings the same time by reading the following detailed description will present foregoing and other features, aspects and advantages of the more obvious, the drawings: Figure 1 shows an exemplary electrical current in accordance with a preferred embodiment of a processing system of a perspective FIG.; FIG. 2 and 3 are respectively a bottom view showing an exemplary electrical processing system includes a pair of exemplary electrical contacts and side view; FIGS. 4A to 4C show a first embodiment in accordance with the presently preferred embodiment, the process according to FIG. 1 a side view of an exemplary electrical contact member of an exemplary processing system 3; FIGS. 5A and 5B 4A to 4C is a diagram of an exemplary view of the workpiece contact member interacts with 1 to FIG. 3; FIGS. 6A to 6C It represents a second embodiment in accordance with the presently preferred embodiment, and in accordance with an exemplary side view of an exemplary electrical contact member processing system of FIG 1 to FIG. 3; FIGS. 7A and 7B show a third embodiment in accordance with the presently preferred embodiment, and in accordance with FIG. 1 a side view of the exemplary electrical contact member of an exemplary processing system of FIG. 3; FIGS. 8A to 8B show a fourth embodiment in accordance with the presently preferred embodiment, and according to an exemplary electrical exemplary processing system of FIG 1 to FIG 3 a side view of the contact member; 9A表示依照目前优选的第五实施例、并依照图1到图3的示范性电处理系统的示范性触头部件的侧视图;图9B到9D是表示图9A的示范性触头部件与图1到3的工件相互作用的视图; 9A shows a fifth embodiment in accordance with the presently preferred embodiment, the process according to an exemplary side view of the contact member of Figure 3 an exemplary electrical processing system; FIG. 9B to FIG. 9D is a diagram of an exemplary contact member 9A and FIG. interaction view of the workpiece 1 to 3;

图10A和10B分别表示图1的示范性电处理系统的侧视图和仰视图,所述系统包括一对示范性静触头和包括一外壳的触头部件安装装置;图11A和11C分别表示图1的示范性电处理系统的侧视图和仰视图,所述系统包括一对示范性动触头和包括一外壳的触头部件安装装置;图11B表示图11A和11C的一部分安装装置的详尽侧视图;图11D表示弯曲形触头部件的另一实施例;图12A和12B分别表示图1的示范性电处理系统的侧视图和仰视图,所述系统包括一对可垂直移动的示范性触头部件和一触头部件安装装置;以及图13A和13B是表示采用背侧触头的本发明实施例的视图。 10A and 10B are a side view and a bottom view of an exemplary electrical processing system of FIG. 1, the system includes a pair of stationary contacts and the contact exemplary component mounting apparatus comprising a housing; FIGS. 11A and 11C, respectively of FIG. side and bottom views of an exemplary electrical processing system 1, the system includes a pair of movable contacts exemplary contact member and the mounting means comprises a housing; detailed side part of the mounting apparatus showing in FIG. 11A and FIG. 11B. 11C view; FIG. 11D shows another embodiment of the curved contact member embodiment; FIGS. 12A and 12B are a side view and a bottom view of an exemplary electrical processing system of FIG. 1, the exemplary system includes a pair of vertically movable contact the head member and a contact member mounting device; and FIGS. 13A and 13B are views showing an embodiment of the present invention employs the backside contacts.

具体实施方式 detailed description

现在参照附图详细描述本发明,将这些附图作为本发明优选实施例的说明性例子。 The present invention will be described in detail now to the drawings, illustrative examples of these figures as a preferred embodiment of the present invention with reference to embodiments.

现在参照图1,它表示依照目前优选的实施例的示范性电处理系统100的透视图。 Referring now to Figure 1, there is shown a perspective view of an exemplary electrical processing system 100 of the preferred embodiment in accordance with the current. 图1示意性地示出了能实施电镀和电刻蚀工艺的示范性电处理系统100。 FIG 1 schematically illustrates an exemplary processing system of electrical energy and electrical plating etch process 100. 本发明的示范性电处理系统可以是能够实施平面电镀和平面电刻蚀的系统,例如电化学机械淀积(ECMD)系统或电化学机械刻蚀(ECME)系统。 Exemplary electrical processing system of the present invention may be embodied flat plane electric plating and etching systems, such as electrochemical mechanical deposition (ECMD) system or electrochemical mechanical etching (ECME) system. 应指出,这些系统都统称为电化学机械加工(ECMPR)系统。 It should be noted that these systems are collectively referred to as electrochemical machining (ECMPR) system. 该示范性ECMPR系统100包括电极102、工件104、和工件表面改变装置(WSID)106。 ECMPR the exemplary system 100 includes an electrode 102, the workpiece 104 and the workpiece surface changing means (WSID) 106. WSID例如可以是掩模、掩模板、焊盘、扫除器或者其它适当的表面改变装置。 WSID may be, for example, a mask, a reticle, a pad, wipe, or other suitable surface changing means. WSID106位于空腔或腔室107上。 WSID106 located in the cavity or chamber 107. 溶液108充入腔室107,并与电极102和工件104接触。 108 was charged into the chamber 107, and contacts the electrode 102 and the workpiece 104. 如果要实施镀敷,或者既实施镀敷又进行电抛光,溶液108通常就要含有欲淀积金属的离子物质,并含有有助于高质量成膜的添加剂。 To embodiments plating, or plating is both electrically and polishing, the solution will generally contain 108 to be deposition of a metal ionic species and containing additives may facilitate the deposition of high quality. 对于镀敷或者镀敷并刻蚀而言,例如,示范性的铜镀液可以是含该行业常用添加剂的硫酸铜溶液。 For plating and etching or plating, for example, copper plating solution may be an exemplary copper sulfate solution containing conventional additives in the industry. 但是如果仅实施电抛光,溶液108就是典型的电刻蚀/抛光溶液,其不含欲刻蚀掉的材料的离子物质。 However, if only the electropolishing embodiment, the solution 108 is typically an electrical etching / polishing solution, which is free of the material to be etched away ionic species. 对于铜电刻蚀而言,含磷酸之类的酸的溶液非常普遍。 For purposes of etching the copper-containing phosphoric acid solution and the like are very common. 工件104例如是欲镀敷的导电金属(优选为铜或铜合金)的硅片。 Workpiece 104, for example, a conductive metal plating (preferably copper or copper alloy) to be silicon. 晶片104包括欲镀敷铜的正面109和由载架头保持的底面110。 For a wafer 104 comprising a front copper plating 109 and bottom 110 held by the carrier head. 载架头111可通过轴112或心轴旋转。 Carrier head 111 may be rotated by a spindle or shaft 112. 轴112穿过不旋转的轴套113,以可动方式连接到支撑结构(未示出)上。 Shaft 112 through the sleeve 113 does not rotate, movably connected to the support structure (not shown). 当轴112和载架头111沿Z或X方向移动时,轴套随轴112和载架头111同时移动。 When the moving shaft 112 and the carrier head 111 in the X or Z direction, while movement of the sleeve 112 with the shaft 111 and the carrier head. WSID106包括顶面114、底面115和在顶面114与底面115之间延伸的沟道118或开口。 WSID106 includes a top surface 114, bottom surface 115 and the channel between the top surface 114 and bottom surface 115 or opening 118 extends. 沟道118可具有任何形式和任意尺寸,或者为了让薄膜更均匀而在WSID106上形成任意的图形。 Channel 118 may be of any arbitrary size and form, or to make the film more uniformly formed in an arbitrary pattern on WSID106. 沟道118可采用能让晶片104与电极102通过WSID106流体连通的任何形状。 Channel 118 allows the wafer 104 and the electrode can be any shape WSID106 102 in fluid communication. 尽管图1中WSID106为长方形,但可将它构造成任何几何形状。 Although FIG. 1 WSID106 rectangular, but it may be configured into any geometric shape. 在2001年9月20日申请的发明名称为“Mask Plate Design”的美国申请09/960236(同样也转让给本发明的受让人)公开了各种掩模板实施例。 In the name of the invention September 20, 2001 to apply for the "Mask Plate Design" US application 09/960236 (also assigned to the assignee of the present invention) discloses various embodiments mask.

正如前面所提到的,示范性的电处理系统100能够实施平面或非平面的电镀以及平面或非平面的电刻蚀。 As previously mentioned, electrical processing system 100 in an exemplary embodiment can be planar or non-planar electrical plating, and etching the planar or non-planar. 在该意义上,如果选择非平面处理方法,就要让晶片104的正面109靠近WSID106的顶面114,但不与其接触,这样就能实施非平面的金属淀积。 In this sense, if the non-planar processing method selected, it is necessary to let the front side 109 of the wafer 104 near the top surface 114 WSID106, but not in contact therewith, so that the implementation can be a non-planar metal deposition. 此外,在本发明的一个方面中,如果选择了平面处理方法,就要让晶片104的正面109与WSID106的顶面114接触。 Further, in one aspect of the present invention, if the planar processing method selected, it is necessary to let the front side 104 of the wafer 109 in contact with the top surface 114 WSID106. 随着镀敷液(用箭头108表示)输送过沟道118,晶片104在正面109接触WSID106的顶面114或者靠近顶面114的同时发生移动。 As the plating solution (indicated by arrow 108) through the delivery channel 118, the wafer 104 is moved in simultaneous or near a top surface 114 of top surface 114 of the front surface 109 of the contact WSID106. 晶片104可顺时针或逆时针旋转移动,或者可沿WSID106的X轴横向移动,或者它既旋转又横向移动。 Wafer 104 may be rotated clockwise or counterclockwise movement, or move laterally along the X axis WSID106, or both rotational and transverse movement. 在晶片104和电极102之间施加电位的条件下,并且在存在充满沟道118的溶液108情况下,铜之类的金属镀敷到晶片104的正面109上,或者从上面刻蚀下来。 Under application of an electrical potential between the wafer 104 and the electrodes 102 and 108 in the presence of a solution where the channel 118 is filled with a metal such as copper plating on the front surface 109 of the wafer 104, or etching from the top down. 然而要指出的是,上面描述的是晶片104旋转和移动的情况,其假设WSID106是静止的。 However, to be noted that the above-described case where the wafer 104 is rotated and moved, which is assumed WSID106 stationary. 要理解的是,上述系统100既可允许晶片移动,又允许WSID移动,或者允许二者都移动,由此产生同样的相对运动效果。 It is to be understood that the above-described system 100 can permit movement of the wafer, and allowed WSID move or allow movement of both, thereby producing the same effect relative movement. 但是为了描述简便,本发明是前面描述的那种情况,下面将按照晶片移动的方式继续描述。 But for simplicity of description, the present invention is the kind of situation described above, will continue to be described below in accordance with the wafer movable manner.

图2和3分别表示图1的示范性电处理系统100的仰视图和侧视图,该系统包括一对示范性的电触头116。 Figures 2 and 3 show an exemplary electrical system of processing a bottom view and a side view 100 of FIG. 1, the system includes one pair of electrical contacts 116 is exemplary. 如图2和3所示,在电镀或者电刻蚀过程中,随着晶片104移动、即横向移动、旋转或者既旋转又横向移动,通过与晶片104的正面109的暴露边缘120相接触的电触头116施加阴极或阳极电位。 2 and 3, in the electrical plating or etching process, as the wafer 104 moves, i.e. lateral movement, rotation or both rotational and transverse movement, by a front edge 120 of the wafer 104 is exposed to the electrical contact 109 contacts 116 potential applied to the cathode or anode. 电触头116通过电线121与电源端子(未示出)相连。 The electrical contacts 116 through a wire 121 to the power supply terminal (not shown). 依照本发明的原理,电触头116包括单向或者双向触头部件。 Accordance with the principles of the present invention, the electrical contacts 116 includes a contact member unidirectional or bidirectional. 按照图4A到5B所列举的,触头部件优选用于晶片沿顺时针方向或逆时针方向旋转时的情况。 According to FIG. 4A to 5B exemplified, for the case when the contact member is preferably a wafer in a clockwise or counterclockwise direction. 但是,按照图6A到9D所列举的,示出了优选用于沿这两个方向旋转的触头部件。 However, according to FIGS. 6A to 9D enumerated, illustrate preferred contact member for rotation in both directions. 参照图10A到12A以及下面更为全面的描述,还可将系统100的电触头116做成静止的、可横向移动的或者可垂直移动的。 Referring to FIGS. 12A and 10A to be described more fully below, the system 100 may also be in electrical contact 116 is made stationary or transversely movable vertically movable.

图4A到4C表示依照目前优选的第一实施例、并依照图1到图3的示范性电处理系统100的示范性触头部件122A、122B的侧视图。 4A to 4C show a first embodiment in accordance with the presently preferred embodiment, and according to an exemplary side view of an exemplary electrical contact member 100 of the processing system of FIG 1 to FIG 3, 122A, 122B of. 如图4A和4B所示,触头122A、122B包括基座124和一个或多个触头元件126。 4A and 4B, the contacts 122A, 122B comprises a base 124 and one or more contact elements 126. 在该实施例中,触头元件126是由导电刷毛128或者电线束构成的刷子。 In this embodiment, the contact member 126 is made of conductive bristle brush 128 or the wiring harness. 例如,刷毛128可由柔性合金线、Pt合金线或者不锈钢线等构成。 For example, the bristles 128 may be a flexible wire alloy, Pt-alloy wire or a stainless steel wire or the like. 基座124由铜、不锈钢、钛等制成,或者被下面描述的刷子所覆盖。 Base 124 made of copper, stainless steel, titanium or the like, or a brush are described below covered. 刷子126优选由不会与所用溶液起反应(如果用于淀积,就要阻止铜镀敷)的导电材料制成,或者用这些导电材料涂覆。 Made by the brush 126 is preferably not react with the solution (if used for deposition, it is necessary to prevent copper plating) of electrically conductive material or coated with such a conductive material. 可采用铂、铂合金、Ta、TaN、Ti、TiN等材料或者涂层。 Can be platinum, platinum alloys, Ta, TaN, Ti, TiN coating material or the like. 这些导电材料和考虑事项优选用于下面要描述的其他实施例。 These conductive materials and considerations to be described below are preferred for other embodiments.

刷子126尽管可采用任何适当的长度,但其长度可在1到4cm、优选2-3cm的范围内。 Although the brush 126 can be any suitable length, but the length, preferably in the range of 2-3cm in 1 4cm. 刷子的长度和刷毛被晶片表面推过的距离决定了刷子126施加到晶片表面上的力。 And the length of the brush bristles are pushed through the wafer 126 from the surface of the brush determines the force applied to the wafer surface. 根据经验,刷子越长,施加在晶片上的力越柔,沿图2所示的暴露边缘120形成划痕的机会就越少。 According to experience, the length of the brush, the more flexible the force exerted on the wafer, the less chance of scratches formed along the exposed edge 2120 shown in FIG. 每个触头元件由许多束、优选5到20束、最优选至少10束导线构成,每束导线含有多根导线、例如20到300根,如果采用0.002英寸厚的导线,优选含有50到200根导线,但这可根据需要而改变。 Each contact element by a number of beams, beam preferably 5 to 20, most preferably at least 10 constituting the wire bundle, each bundle comprising a plurality of conductor wires, for example, 20 to 300, if the wire 0.002 inches thick, preferably 50 to 200 wires, but this can be changed as needed. 在该实施例中,由于刷子126朝右倾斜,当晶片104按照在触头元件126上方朝右移动的方式旋转时,优选采用触头部件122A。 In this embodiment, since the brush 126 is inclined to the right, when the wafer 104 is rotated in the rightward movement of the contact element 126 in the above embodiment, the contact member preferably employed 122A. 类似地,当晶片104在刷子上方朝左倾斜时,优选采用触头部件122B。 Similarly, when the wafer 104 is inclined toward the left over the brush, the contact member preferably employed 122B.

如图4C所示,在两个触头部件122A和122B中,刷子126的倾角(用'A'表示)约为45度,这样倾角优选介于30到60度之间,尽管也可以采用任何适当角度。 , In the two contact members 122A and 122B, the angle of inclination of the brush 126 in FIG. 4C (with 'A' represents a) is about 45 degrees, this angle preferably between 30 to 60 degrees, although any may be used appropriate angle. 倾角'A'是在基座124的上表面130和对称穿过刷子126中心的倾斜轴132之间测得的角度。 Angle 'A' is the angle between the tilt axis 132, measured on the surface 130 of the base 124 and the brush 126 passes through the center of symmetry. 该倾角使得刷子126在晶片104与触头部件122A或122B接触时的弯曲更容易、更均匀。 The brush 126 is bent such that the angle of inclination of the wafer 104 when the contact member 122A or 122B contacts easier and more uniform.

图5A和5B是表示图4A到4C的示范性触头部件与图1到3的工件104相互作用的视图。 5A and 5B showing 4A to 4C are exemplary views workpiece 104 and the contact member 1 to 3 interaction FIG. 操作过程中,如图5A和5B所示,随着晶片104从第一位置'A'沿距离d移到第二位置'B',刷子126也被下压相同的距离d。 During operation, 5A and 5B, as the wafer 104 from a first position 'A' along the distance d to the second position 'B', the brush 126 is also pressed at the same distance d. 距离d越长,施加在晶片04上的力、以及擦伤晶片104的可能性就越大。 The longer the distance d, and the possibility of abrasion of the wafer 104 on the wafer 04 a force exerted is greater. 但是,角'A'越小(图4C),力就越小,擦伤晶片104的机会就越小。 However, the angle 'A' decreases (FIG. 4C), the smaller the force, the less chance of abrasion of the wafer 104.

图6A到8B表示优选用于不用考虑晶片移动方向的触头部件。 6A to 8B shows a contact member is preferably used regardless of the moving direction of the wafer. 处理过程中,晶片的旋转方向在任何时刻都在改变。 Process, the rotational direction of the wafer are altered in any way. 图6A到6C表示依照目前优选的第二实施例、并依照图1到3的示范性电处理系统100的示范性触头部件136的侧视图。 6A to 6C show a second embodiment in accordance with the presently preferred embodiment, and a side view of an exemplary contact member 136, 100 according to an exemplary electrical processing system of Figure 1 to 3. 如图6A所示,在一个实施例中,触头部件136包括组装到基座140中、优选组装到基座框架中的一系列触头元件138。 As shown in FIG. 6A, in one embodiment, the contact member 136 is assembled into the base 140 includes, preferably assembled to the base frame in a series of contact element 138. 在该实施例中,触头元件138A是滚子。 In this embodiment, a roller contact member 138A. 此外,如图6B所示,滚子138A优选为盘形,其具有能让滚子138A在滚过晶片104的表面的同时与之形成电接触的平坦接触面139。 Further, as shown in FIG. 6B, the roller 138A is preferably disc-shaped, having a flat contact surface 139 which allows the roller 138A electrical contact therewith at the same time rolling across the wafer surface 104. 由于滚子138A的平坦表面139,当触头部件136与晶片104接触时,该触头部件的滚子138A以垂直姿态保持在晶片104上。 Since the sub-flat surface 138A of the roller 139, when the contact member 136 in contact with the wafer 104, the contact roller 138A of the holding member to a vertical position on the wafer 104. 基座框架140具有第一半框架142和第二半框架144。 Base frame 140 having a first half and a second half frame 142 frame 144. 滚子138A通过销钉146可移动地保持在第一个半部分142和第二个半部分144之间,所述销钉贯穿滚子138A的中心,其两端固定在这两个半部分142和144上。 The roller 138A by a pin 146 is movably held between the first half portion 142 and second half 144, through the roller center pin 138A, which is fixed at its ends two halves 142 and 144 on.

图6C表示可选择的滚子设计方案,滚子138B具有圆形的接触面150。 Roller design 6C shows an alternative, the roller 138B having a circular contact surface 150. 与上面描述的滚子138A类似,滚子138B也通过多个销钉146保持在基座框架140的第一个半部分142和第二个半部分144之间。 The roller 138A is similar to that described above, the roller 146 138B also held between the first half portion 140 and second half 142 of the base frame portion 144 via a plurality of pins. 滚子138B的圆形接触面150使得它们以一定角度与晶片104的表面接触。 Circular contact surface 138B roller 150 at an angle such that they contact with the surface of the wafer 104. 在这两个设计方案中,滚子138A、138B可装备适当的机械偏置机构,以增强它们与晶片104的表面的接触能力。 In both designs, the rollers 138A, 138B may be equipped with suitable mechanical biasing mechanism, to enhance their ability in contact with the surface of the wafer 104. 该偏置结构可以是、但不限于弹簧,它们设置在与销钉146相邻的位置,使得滚子138A、138B朝晶片104的方向偏移。 The biasing structure may be, but is not limited to a spring, which are arranged adjacent to the position of the pin 146, such that the rollers 138A, 138B of the wafer 104 in the direction of the offset. 该偏置机构还能帮助滚子138A、138B在晶片104的表面上平滑移动。 The biasing mechanism also helps rollers 138A, 138B to move smoothly on the surface of the wafer 104.

图7A到7B表示依照目前优选的第三实施例、并依照图1到3的示范性电处理系统100的示范性触头部件152的侧视图。 7A to 7B show a third embodiment in accordance with the presently preferred embodiment, and a side view of an exemplary contact member 100 is electrically 152 according to an exemplary processing system of FIG 1 to 3. 图7A和7B表示带有基座154和触头元件156的触头部件152。 FIGS. 7A and 7B show the contact member 154 having a base 156 and a contact element 152. 在该实施例中,触头元件156是环形构造的环形触头。 In this embodiment, the contact member 156 is an annular ring configuration of the contacts. 环形触头156通过触头156的下部158与基座154结合。 An annular lower portion 156 contacts the contact 156 in conjunction with the base by 158,154. 在该实施例中,触头156的上部160优选做成平的。 In this embodiment, the upper portion 156 of the contact 160 is preferably made flat. 在环形触头被放置在晶片上时,它通过上部160与晶片表面形成物理和电学接触。 When the annular contact is placed on the wafer, it forms a physical and electrical contact with the wafer 160 through the upper surface. 在该环形触头156被放置在晶片上时,该环形形状通过产生作用于晶片的弹簧力,增强了由此形成的接触。 When the contact ring 156 is placed on the wafer, which is generated by the ring shape of the spring force acting on the wafer, enhancing contact thus formed. 如图7B所示,在另一设计方案中,环形触头156的上部162可以是弯曲形或者凸形。 As shown in FIG. 7B, in another embodiment, the annular upper portion 162 of the contact 156 may be curved or convex shape. 该环形触头由可导电的线、带或者平坦的块构成。 The annular contact piece by the conductive wire, ribbon or flat configuration. 基座154优选由导电材料制成。 The base 154 is preferably made of conductive material. 应当指出,图7A和7B中的环可以是空心环,或者环内有泡沫材料之类的可压缩材料,以便能更好地支撑上部160。 It should be noted that FIGS. 7A and 7B cycloalkyl ring may be hollow, compressible material or foam material or the like within the ring, in order to better support the upper portion 160.

图8A到8B表示依照目前优选的第四实施例、并依照图1到3的示范性电处理系统的示范性触头部件166的侧视图。 8A to 8B show a fourth embodiment in accordance with the presently preferred embodiment, and a side view of an exemplary contact member 166 according to an exemplary electrical processing system of Figure 1 to 3. 图8A表示具有基座168和触头元件170的触头部件166。 8A shows the contact member 168 having a base 166 and a contact element 170. 触头元件170是导电棒,它通过至少一对柔性部件172(例如片簧)与基座168结合。 A conductive contact member 170 is a rod 168 which in conjunction with at least a pair of flexible member 172 (e.g., leaf spring) and the base. 如图8B的侧视图所示,棒170具有圆形的上部174a,以便使触头部件以一定角度置于晶片之上。 As shown in side view in FIG. 8B, rod 170 has an upper circular 174a, so that the contact member is placed over the wafer at an angle. 柔性部件172将棒170推向晶片,由此增强了晶片与触头部件之间的接触。 A flexible rod member 172 toward the wafer 170, thereby enhancing the contact between the wafer and the contact member. 基座和柔性部件优选都由导电材料制成。 Preferably the base and the flexible member are made of electrically conductive material. 应当指出,触头元件170是薄的导电箔,例如厚度为25-1000微米的金属箔。 It should be noted that the contact element 170 is a thin conductive foil, having a thickness of 25-1000 microns, for example, metal foil. 该情况下,为了支撑该薄箔,要用布置在触头元件170和基座168之间的泡沫材料之类的可压缩部件(未示出)代替柔性部件172。 In this case, in order to support the thin foil, use is disposed between the contact member 170 and the base 168 of the compressible member (not shown) the flexible member 172 in place of a foam material or the like.

图9B到9D是表示图9A的示范性触头元件176与图1到3的工件104相互作用的视图。 FIG. 9B 9A to 9D shows an exemplary view of the contact element 176 and the workpiece 104 1-3 interaction FIG. 图9A到9D表示可用作双向触头的触头部件176。 9A to 9D show useful bidirectional contact member 176 contacts. 如图9A所示,触头元件9A包括基座178和一个或多个触头元件180。 9A, 9A includes a base contact member 178 and one or more contact elements 180. 在该实施例中,触头元件180是由多束导电刷毛182或电线构成的刷子。 In this embodiment, the contact member 180 is formed of a plurality of the brush bristle 182 or bundle of conductive wires. 例如,刷毛182可由不锈钢导线之类的柔性合金线构成。 For example, the bristles 182 may be a flexible stainless steel alloy wire or the like conductor configuration. 基座178优选由导电材料制成。 The base 178 is preferably made of conductive material. 刷子180的长度范围为1到5cm,优选为2到3cm,尽管也可以采取任何适当长度。 Length of the brush 180 is 1 to 5cm, preferably from 2 to 3cm, although it may take any suitable length. 刷子180的长度决定了作用在刷子180上的力。 Length of the brush 180 determines the force acting on the brush 180. 根据经验,刷子越长,作用在晶片104上的力越柔,于是沿图2所示的暴露边缘120形成擦伤的机会就越少。 According to experience, the length of the brush, the more flexible force acting on the wafer 104, then along the exposed edge shown in FIG. 2 120 less chance to form scratches. 每个触头部件由多束、优选5到10束、最优选至少10束导线构成,每束导线包括多根导线、例如20到300根之间,如果采用0.002英寸厚的导线,优选包括100到200根导线,但这可根据而需要改变。 Each contact member by a multi-beam, the beam preferably 5 to 10, most preferably at least 10 constituting the wire bundle, each bundle comprising a plurality of lead wires, for example, between 20 to 300, if 0.002 inches thick wire, preferably comprising 100 to 200 wires, but it may be changed according to need. 刷子优选倾斜30到60度,如图4A和4B所示,最好倾斜45度,但也可象图9A所示的那样,使其垂直于基座178的上表面184设置。 Preferably the brush is inclined 30 to 60 degrees, as shown in FIG 4A and 4B, the inclination is preferably 45 degrees, but may be as shown as in FIG. 9A, it perpendicular to the upper surface 184 of the base 178 is provided.

如图9B到9D所示,触头部件176可与沿任一方向移动的晶片一起使用。 9B to FIG. 9D, the contact member 176 may be used together with a movable wafer in either direction. 如图9B所示,随着沿逆时针方向旋转的晶片104靠近并与刷子180接触,刷子朝右侧弯曲。 9B, as the wafer 104 rotates counterclockwise adjacent and in contact with the brush 180, the brush is bent toward the right side. 此时,如果需要改变晶片104的旋转方向,首先要象图9C所示的那样将晶片升到刷子180上方。 At this time, if the need to change the rotational direction of the wafer 104, as the first wafer of FIG. 9C as will rise above the brush 180 shown in FIG. 然后,让晶片104沿顺时针方向旋转,同时使其靠近刷子108,这样刷子就能朝左侧弯曲。 Then, let the wafer 104 rotates in the clockwise direction, while it is close to the brush 108, so that the brush can be bent to the left.

回来参照图1到3,按照前面所提到的,系统100可包括静止的、可横向移动的、或者可垂直移动的电触头结构。 Referring back to FIGS. 1 to 3, as previously mentioned, system 100 may include a stationary, movable laterally, or vertically movable electrical contact structure. 此外,按照前面所提到的,每一个这样的电触头结构都包括上述触头元件的实施例。 In addition, as previously mentioned, each such electrical contact structure comprises a contact element of the above-described embodiment.

图10A和10B分别表示图1的示范性电处理系统100的侧视图和仰视图,该系统包括一对示范性的静触头182和包括一外壳188的触头部件安装装置。 10A and 10B are diagrams showing an exemplary electrical processing system and a bottom side 100 of FIG. 1, the system includes a fixed contact 182 of exemplary contact member and the mounting means comprises a housing 188. 如图10A和10B所示,静触头182与系统100集成在一起。 Shown in FIGS. 10A and 10B, the stationary contact 182 is integrated with the system 100. 静触头182可以是上面参照上述实施例详细描述的任何一种特定触头部件。 Static contact 182 may be any particular contact member embodiments described in detail above with reference to the above. 静触头182的示范性支柱部分184将静触头182与容纳系统100的外壳188连接起来,或者可将其简单地固定到腔室107(未示出)上。 The stationary contact portion 182 of an exemplary strut 184 contacts the housing 182 and the stationary receiving system 100 is connected 188, or may be simply secured to the chamber 107 (not shown). 要理解的是,在该实施例中,静触头182相对WSID106是静止的。 It is to be understood that, in this embodiment, the stationary contact 182 is stationary relative WSID106. 可将静触头182设置成与WSID106相邻。 Stationary contacts 182 may be disposed adjacent to WSID106. 可利用偏置机构(未示出)、例如弹簧使静触头182朝晶片104偏置,以便让触头182与晶片104之间形成更好的接触。 May utilize biasing mechanism (not shown), such as a spring 182 toward the fixed contact 104 so that the wafer bias, is formed so that a better contact between the contacts 182 and the wafer 104. 图10B利用局部仰视图表示静触头182相对WSID106和晶片的位置。 FIG. 10B using a partial bottom view showing the relative position of the stationary contact 182 and the wafer WSID106. 随着晶片104沿顺时针或逆时针方向旋转以及沿X方向移动,静触头182触到晶片104的暴露边缘120。 As the wafer 104 rotating clockwise or counterclockwise direction and moved in the X direction, the stationary contact 182 touches edge 120 of the wafer 104 is exposed. 为了让图示更清楚,所有附图都未示出与触头元件形成的电连接。 To give a clearer illustration, the drawings are not shown with the contact elements of an electrical connector formed. 可采用公知手段和技术为触头元件供电。 Using well-known techniques and means for the contact element power. 在该实施例中,静触头所具有的预定长度是基于晶片尺寸、WSID106的尺寸和形状以及晶片在WSID上的横向移动量。 In this embodiment, the stationary contact has a predetermined length is based on the size of the wafer, the amount of lateral movement of the size and shape of WSID106 wafer on the WSID. 应调整静触头的长度,使得暴露边缘120能连续地接触到至少一些静触头。 It should be adjusted to the length of the stationary contact, so that the exposed edge 120 can be continuously in contact with at least some of the fixed contact. 此外,如图10A所示,静触头的高度优选高于直接位于WSID之上的任何溶液的水平,这样在晶片104与来自腔室107的溶液形成任何接触之前,晶片104就能触到触头,并通过触头将电压施加到晶片104上。 Prior to addition, as shown in FIG. 10A, the stationary contact is preferably higher than the height level directly above any WSID solution so formed in the wafer 104 from any contact with the solution from the chamber 107, the wafer 104 can touch the touch head, and a voltage is applied to the wafer 104 through the contact.

图11A和11C分别表示图1的示范性电处理系统100的侧视图和仰视图,所述系统包括一对可横向移动的示范性触头190和包括一导向机构的触头部件安装装置。 11A and 11C are diagrams showing an exemplary electrical processing system and a bottom side 100 of FIG. 1, the system includes a pair of transversely movable contacts 190 and exemplary contact member mounting means comprises a guide mechanism. 可横向移动的触头190可以是上面参照上述实施例详细描述的任何一种特定触头部件。 Laterally movable contact 190 may be any particular contact member detailed description of embodiments with reference to the above-described embodiments above. 图11B表示图11A和11C的一部分安装装置的详尽侧视图。 11B shows a detailed side view of a portion 11A and 11C of the mounting device. 如图11A到11C所示,横向移动触头190可与系统100集成在一起。 11A to FIG. 11C, lateral movement of the contact 190 may be integrated with the system 100. 支柱部分192将横向移动触头190与导向机构194连在一起。 Strut portion 192 and the lateral guide mechanism 190 moves the contacts 194 together. 如图11B的剖视图所示,导向机构194是一支轨,它容纳着支柱部分192的末端,并能让支柱192的末端沿支轨194移动。 As shown in the sectional view of FIG. 11B, 194 is a guide rail, which accommodates the end of the pillar portion 192, and allow the end strut 192 along the support rail 194 moves. 触头190的横向移动可通过与轴套113永久结合的移动杆195来实现。 Lateral movement of the contact 190 may be achieved by moving the rod 195 and the sleeve 113 is permanently bonded. 当载架头下移时,杆195的下端以可拆卸方式插到支柱192末端的孔内。 When the carrier head down, the lower end of rod 195 is removably inserted into the bore 192 of the end struts. 处理过程中,随着载架头111沿X方向横向移动,杆195使支柱192在支轨194内移动,从而使得触头190随晶片一起横向移动。 Process, as the head 111 in the X direction, the lateral movement of the carrier, so that the rod 195 moves within the struts 192 support rail 194, so that contact with the wafer 190 moves laterally together. 可以选择的是,触头190与受控制器(未示出)控制的移动机构(未示出)相连,所述控制器能使触头190的移动与载架头111的横向移动对应。 Can be selected is, with the contact 190 by a controller (not shown) controls the moving mechanism (not shown), the controller enables a corresponding movement of the lateral movement of the contact head 190 of the carriage 111. 可利用弹簧(未示出)让触头190朝晶片104偏置,以便使触头190和晶片104之间的导电性更好。 May be a spring (not shown) so that the contacts 190 biased toward the wafer 104, so that better conductivity between the contacts 190 and the wafer 104. 图11C利用局部仰视图表示触头190相对WSID106和晶片的位置。 FIG 11C using a partial bottom view showing the relative position of the contact 190 and the wafer WSID106. 随着晶片104沿顺时针或逆时针方向旋转,并沿X方向横向移动,触头190通过随晶片104一起移动,而与晶片104的暴露边缘120持续接触。 As the wafer 104 rotating clockwise or counterclockwise direction, and lateral movement, the contacts 190 in the X direction by moving together with the wafer 104, 120 in continuous contact with the edge of the wafer 104 is exposed. 因此,它们不必象图10B的静触头那么长,而且它们也不必是直的。 Thus, they do not like the fixed contact 10B, so long, but they also need not be straight. 如表示触头190A的图11D所示的实施例所示,触头190A可以是与晶片边缘的曲率相符的弯曲形。 As represented in FIG. 11D contact 190A of the embodiment shown, the contact 190A may be consistent with the curvature of the curved wafer edge. 如图11B所示,静触头的高度同样优选高于直接位于WSID之上的所有溶液的水平,这样在晶片104与来自腔室107的溶液形成任何接触以前,晶片104触到触头,并通过触头将电压施加到晶片104上。 11B, the height of the stationary contact is preferably higher than all the same solution directly over the WSID, so that the wafer 104 is formed with the solution from the chamber 107 before any contact, touch the contacts 104 of the wafer, and by applying a voltage to the contacts 104 on the wafer.

图12A和12B分别表示图1的示范性电处理系统100的侧视图和仰视图,该系统包括一对可垂直、横向移动的示范性触头196以及一触头部件安装装置。 12A and 12B are diagrams showing an exemplary electrical processing system and a bottom side 100 of FIG. 1, the system includes a pair of vertical, laterally movable contacts 196 and an exemplary contact member mounting device. 如图12A和12B所示,可垂直移动的触头196与系统100集成在一起。 As shown in FIGS. 12A and 12B, 100 may be integrated with a vertically movable contact 196 and the system. 可垂直移动的触头196可以是前面参照上述实施例详尽描述的特定触头部件。 Vertically movable contacts 196 may be a reference to the contact member in front of the specific embodiments described in detail. 可垂直移动的触头196的支柱部分198与轴套113结合。 Vertically movable strut portion 196 of the contact 198 113 in combination with the sleeve. 正如上面所提到的,轴套113可随载架头在Z方向上垂直移动以及沿X方向横向移动。 As mentioned above, the sleeve 113 may be vertically movable in the Z direction with the carriage and the head moves laterally in the X direction. 处理过程中,随着载架头111在Z方向上垂直移动,触头196的位置与暴露边缘120保持在一起。 Process, as the head 111 moves in the Z direction perpendicular to the carrier, the position of the contact 196 and the exposed edge 120 together. 在该实施例中,由于只有触头196和晶片之间的相对运动是旋转的,因此该设计使操作者能在处理前将触头202和晶片之间的压力调整至理想的固定水平,跟着将压力维持在该理想水平上。 In this embodiment, since the only relative movement between the wafer and the contacts 196 are rotated, so that the design allows the operator to contact pressure between the wafer 202 and adjusted to a desired fixed level before treatment, followed by the pressure is maintained at the desired level. 触头196与晶片104之间没有相对的横向运动,这减少了由于触头196在暴露边缘120上而引起的机械磨损。 No relative lateral movement between the contact 196 and the wafer 104, which reduces the mechanical wear due to the contacts 196 on the exposed edge 120 caused. 可以选择的是,触头196可与受控制器(未示出)控制的移动机构(未示出)相连,所述控制器能使触头196的移动与载架头111的垂直移动相对应。 Can be selected is, the contacts 196 may be controlled by a (not shown) controls the moving mechanism (not shown), the controller 196 can move vertically with the movable contact carrier head 111 corresponding to . 可利用弹簧(未示出)让触头196朝晶片104偏置,从而使触头196和晶片104之间的导电性更好。 May be a spring (not shown) so that the contacts 196 biased toward the wafer 104, so that better conductivity between the contacts 196 and the wafer 104. 图12B利用局部仰视图表示触头196相对WSID106和晶片的位置。 FIG. 12B using a partial bottom view showing the relative position of the contact 196 and the wafer WSID106. 随着晶片104沿顺时针或逆时针方向旋转,并沿X方向横向移动,触头196与晶片104的暴露边缘120持续接触。 As the wafer 104 rotating clockwise or counterclockwise direction, and the exposed lateral edge 120 moves continuously in contact with the contacts 196 of the wafer 104 in the X direction. 该实施例中,在将晶片104装到载架头111上的过程中,需通过一机构(未示出)让触头196离开正轨。 In this embodiment, the wafer 104 is mounted on the carrier head 111 during required by a mechanism (not shown) so that contacts track 196 to leave. 在装完晶片104后,触头与其表面物理接触,然后启动处理过程。 After the charge of the wafer 104, in physical contact with the contact surface therewith, and then start the process. 与参照图11A和11C讨论的情况类似,随着晶片104沿顺时针或逆时针方向旋转,同时沿X方向横向移动,触头196通过与晶片104一起移动,与晶片104的暴露边缘120持续接触。 And 11A and 11C similar to that discussed case, as the wafer 104 is rotated clockwise or counterclockwise direction, while the lateral movement in the X direction, the contacts move together with the wafer 196 through 104, and 120 continuous contact exposed edge of the wafer 104 . 因此,它们不必象图10B的静触头那么长,而且它们也不必是直的。 Thus, they do not like the fixed contact 10B, so long, but they also need not be straight. 其具有与晶片边缘的曲率相符的弯曲形。 Consistent with the curvature of the curved edge of the wafer.

图13A表示图1的示范性电处理系统100的侧视图,该系统包括一示范性的背侧触头202和与之相关的触头部件安装装置。 13A shows a side view of an exemplary electrical processing system 100, the system comprising a backside contacts exemplary contact 202 and the associated component mounting apparatus. 如图13A所示,背侧触头202可与系统100集成在一起。 As shown in FIG. 13A, a backside contact 202 may be integrated with the system 100. 背侧触头202可以是前面参照上述实施例详尽描述的特定触头部件。 Backside contact 202 may be a particular embodiment of the contact member described above in detail with reference to the foregoing description. 在该实施例中,晶片204具有导电层206,一般是籽晶层,它从正面208绕削面(bevel)部分210延伸到背面212,这样就能维持晶片204与晶片背面的背侧触头202的电接触。 In this embodiment, the wafer 204 having a conductive layer 206, the seed layer is typically, it is about surfacing (Bevel) portion 210 extends from the front 208 to the back surface 212, so that the wafer 204 can maintain contact with the back surface of the back side of the wafer 202 electrical contact. 在该实施例中,可接上保持触头202的触头部件。 In this embodiment, contact 202 may be connected to the contact holding member. 背侧触头202的支柱部分与轴套113结合。 Contacts the back side 202 of the sleeve 113 in conjunction with the strut portion. 按照上面所提到的,轴套113可随载架头在Z方向上垂直移动以及在X方向上横向移动。 According to the above-mentioned, the sleeve 113 with the carrier head can be moved vertically in the Z direction and the lateral movement in the X direction. 处理过程中,随着载架头111在Z方向上垂直移动,触头196的位置始终与暴露的背面边缘保持在一起。 Process, as the head 111 moves in the Z direction perpendicular to the carrier, the position of the contact 196 together with the back edge remains exposed. 在该实施例中,由于只有触头202和晶片之间的相对运动是旋转的,因此该设计使操作者能在处理前将触头和晶片之间的压力调整至理想的固定水平,跟着将压力维持在该理想水平上。 In this embodiment, since the only relative movement between the wafer and the contacts 202 are rotated, so that the design allows the operator to the pressure between the contacts and the wafer is adjusted to a desired fixed level before treatment, followed by the pressure is maintained at the desired level. 触头202与晶片204之间没有相对的横向运动,从而减少了机械磨损。 No relative lateral movement between the contact 202 and the wafer 204, thereby reducing mechanical wear. 可以选择的是,触头202可与受控制器(未示出)控制的移动机构(未示出)相连,所述控制器能控制载架头111的垂直运动。 Can be selected is, contact 202 may be (not shown) controls the moving mechanism (not shown) is connected by a controller to control the vertical movement of the head 111 of the carriage. 可利用弹簧(未示出)让触头202朝晶片104偏置,从而使触头202和晶片204之间的导电性更好。 May be a spring (not shown) so that the contacts 202 biased toward the wafer 104, so that better conductivity between the contacts 202 and the wafer 204. 可以选择的是,如图13A的虚线所示,可将触头部件和背侧触头202布置在载架头111内,这样一旦将晶片204放到载架头111上,就能在载架头111内形成电接触。 Can be selected is, the dotted line shown in FIG. 13A, the contact member may contact 202 and the rear carrier disposed within the head 111, so that once the wafer 204 placed on the carrier head 111, the carrier will be able to forming electrical contact with the inner head 111. 应指出的是,还可将触头直接做到晶片的边缘(削面)上。 It should be noted that the contacts may also be done directly on the edge of the wafer (surfacing).

图13B表示设有背侧触头的系统的另一实施例。 13B shows a backside contact with another embodiment of the system. 如图所示,WSID106A的尺寸比所有尺寸的晶片都大,这样,在处理过程中,整个晶片都暴露给WSID106A和处理液。 As shown in FIG, WSID106A size larger than the size of all the wafer, so that, in the process, the entire wafer is exposed to WSID106A and the treatment liquid.

清洗触头也是一个考量。 Cleaning contacts is also a consideration. 一方面,许多例子中,传统触头都涂覆了Cu、Pt、Pd或者其它材料以确保再现性。 In one aspect, a number of instances, the contacts are coated with a conventional Cu, Pt, Pd, or other materials to ensure reproducibility. 但是,又使它们因腐蚀等原因而遭到损坏。 However, due to reasons but also to make them corrosion and damaged. 如果触头相对晶片是静止的,这种腐蚀将改变均匀性,而如果触头相对晶片移动,就象在本发明中那样,均匀性会达到均化。 If contact is stationary relative to the wafer, the uniformity of such corrosion will change, and if the contacts move relative to the wafer, as above, uniformity reaches homogenized in the present invention. 另一方面,有效清洗触头能延长触头寿命,并能提高接触的一致性。 On the other hand, effective cleaning of the contact can extend the life of the contacts, and to improve the consistency of the contact. 清洗方法包括:在晶片处理过程中,在发生或不发生电抛光的情况下处理了一定数量的晶片之后,在电抛光晶片的同时使用调节晶片进行电抛光;或者从系统上取下触头,并利用调节焊盘、电抛光、或者其它传统清洗操作对它们进行清洗。 Cleaning method comprising: a wafer processing, a certain number of wafers processed in the event of an electrical or after polishing does not occur at the same time using the adjusted electropolishing wafer electropolishing wafer; contacts or removed from the system, adjust pad and use, electrolytic polishing, or other conventional cleaning operation for cleaning them.

尽管参照优选实施例对本发明做了具体描述,但对于本领域的普通技术人员来说,在不脱离本发明的精神和范围的情况下从形式和细节上做出变化和改进是显而易见的。 Although the preferred embodiments with reference to embodiments of the present invention has been specifically described, but those of ordinary skill in the art, a change is made from the form and detail without departing from the spirit and scope of the present invention and modifications will be apparent. 试图认为所附权利要求包括了这些变化和改进。 Trying to think of the appended claims all such changes and improvements.

Claims (43)

  1. 1.一种晶片处理过程中在晶片正面边缘处与晶片正面的导电层形成电接触的系统,所述晶片由晶片载架保持,该系统包括:至少一个触头部件,该触头部件在晶片的正面边缘处与所述导电层电接触,其中该至少一个触头部件和晶片正面边缘之间的相对旋转运动使得该至少一个触头部件在不同时刻与晶片正面边缘的不同部分电接触;以及在维持所述相对旋转移动的同时发生的晶片的横向移动、以及该至少一个触头部件的一个相应横向移动同步地发生,由此维持晶片横向移动过程中的电接触。 A wafer processing system during wafer in electrical contact with the conductive layer of the front edge of the front surface of the wafer, the wafer held by the wafer carrier, the system comprising: at least one contact member, the contact member in the wafer the front edge of the electrical contact with the conductive layer, wherein the at least one relative rotational movement between the contact member and the front edge of the wafer such that different portions of the at least one electrical contact member at different timings in contact with the front edge of the wafer; and maintaining the lateral movement relative rotational movement occurring while the wafer, and a corresponding at least one occurrence of lateral movement of the contact member in synchronization, thereby maintaining electrical contact with the wafer during the lateral movement.
  2. 2.根据权利要求1所述的系统,其中所述至少一个触头部件具有与晶片正面边缘的曲率相对应的弯曲形状。 2. The system according to claim 1, wherein said at least one contact member has a curved shape with the curvature of the front edge of the corresponding wafer.
  3. 3.根据权利要求2所述的系统,其中除了晶片的横向移动外,还同步发生晶片旋转移动之外的任何移动以及该至少一个触头部件的任何进一步相应移动,由此维持晶片的电接触。 3. The system of claim 2, wherein in addition to the lateral movement of the wafer, moving the wafer rotating any further than the synchronous movement and the corresponding movement of the at least one further contact any member occurs, thereby maintaining electrical contact with the wafer .
  4. 4.根据权利要求1所述的系统,其中该至少一个触头部件包括基座支持部件和与该基座支持部件连接的至少一个触头元件,所述至少一个触头元件维持着与晶片正面的相应暴露边缘的连续电接触。 4. The system of claim 1, wherein the at least one contact member comprises a base support member and the at least one contact element connected to the base support member, the at least one contact element maintains the wafer front surface the continuous electrical contact with respective exposed edges.
  5. 5.根据权利要求4所述的系统,其中该至少一个触头部件与所述晶片载架机械连接。 5. The system according to claim 4, wherein the at least one contact member connected to the mechanical wafer carrier.
  6. 6.根据权利要求5所述的系统,其中:通过利用与所述晶片载架相连的旋转轴旋转该晶片载架,从而获得所述相对旋转移动,以及所述至少一个触头部件与所述晶片载架的非旋转轴套机械连接。 6. A system as claimed in claim 5, wherein: the rotating shaft by using the wafer carrier is connected to rotate the wafer carrier so as to obtain the relative rotational movement, and the at least one contact member of the wafer carrier non-rotating sleeve mechanically connected.
  7. 7.根据权利要求6所述的系统,其中该至少一个触头部件还适合相对一工件表面改变装置横向移动,其中该工件表面改变装置在处理过程中与晶片正面物理接触。 7. The system according to claim 6, wherein the at least one contact member relative to a workpiece surface is further adapted to change the lateral movement device, wherein the workpiece surface in contact with the front surface means a physical change in the wafer process.
  8. 8.根据权利要求7所述的系统,其中工件表面改变装置是垫板。 8. The system of claim 7, wherein the changing means is a plate workpiece surface.
  9. 9.根据权利要求7所述的系统,其中该处理是电抛光。 9. The system of claim 7, wherein the process is electropolishing.
  10. 10.根据权利要求7所述的系统,其中该处理是电镀。 10. The system according to claim 7, wherein the electroplating process.
  11. 11.根据权利要求7所述的系统,其中该至少一个触头部件利用支柱与所述非旋转轴套机械连接,该支柱搁在一导向机构上,所述导向机构允许所述至少一个触头部件相对工件表面改变装置横向移动,并在晶片发生横向移动时维持该至少一个触头部件作相应的横向移动。 11. The system of claim 7, wherein the at least one post and said contact member using a non-rotating sleeve mechanically connected to a strut resting on a guide means, said guide means allowing the at least one contact member relative lateral movement of the workpiece surface changing means, and maintaining the at least one contact member for movement in respective transverse lateral movement occurs when the wafer.
  12. 12.根据权利要求11所述的系统,其中所述导向机构包括支轨,所述支柱通过移动杆靠在所述支轨上,所述移动杆与所述轴套连接。 12. The system according to claim 11, wherein said guide means comprises a support rail, the rail strut against said support rod by moving the moving rod and the sleeve is connected.
  13. 13.根据权利要求7所述的系统,其中该至少一个触头部件还适合相对所述工件表面改变装置垂直运动,其中该至少一个触头部件不旋转。 13. The system according to claim 7, wherein the at least one contact member relative to the workpiece surface is further adapted to change the vertical movement means, wherein the at least one contact member does not rotate.
  14. 14.根据权利要求5所述的系统,其中该至少一个触头部件具有与晶片正面边缘的曲率相对应的弯曲形状。 14. The system according to claim 5, wherein the at least one contact member has a curved shape with the curvature of the front edge of the corresponding wafer.
  15. 15.根据权利要求1所述的系统,其中该至少一个触头部件还适合相对一工件表面改变装置横向移动,其中处理过程中,工件表面改变装置与晶片正面物理接触。 15. The system according to claim 1, wherein the at least one contact member relative to a workpiece surface is further adapted to change the lateral movement device, wherein the process, the front surface of the workpiece changes in physical contact with the device wafer.
  16. 16.根据权利要求15所述的系统,其中该至少一个触头部件具有与晶片正面边缘的曲率相对应的弯曲形状。 16. The system according to claim 15, wherein the at least one contact member has a curved shape with the curvature of the front edge of the corresponding wafer.
  17. 17.根据权利要求4所述的系统,其中该至少一个触头元件包括具有导线束的刷子。 17. The system according to claim 4, wherein the at least one contact element comprises a brush having a wire bundle.
  18. 18.根据权利要求17所述的系统,其中所述刷子的导线以一倾角与晶片正面接触,这样晶片可相对该至少一个触头部件单向旋转。 18. The system according to claim 17, wherein said wire brush at an angle in contact with the front surface of the wafer, the wafer so that the relative rotation of the at least one contact member unidirectional.
  19. 19.根据权利要求17所述的系统,其中所述刷子的导线近似垂直于晶片正面,这样晶片可相对该至少一个触头部件作双向旋转。 19. The system according to claim 17, wherein said brush lead wire is approximately perpendicular to the front of the wafer, the wafer may be such relative to the at least one contact member for bi-directional rotation.
  20. 20.根据权利要求17所述的系统,其中所述刷子的导线允许弯曲,于是晶片可相对该至少一个触头部件垂直移动。 20. The system according to claim 17, wherein said allowable bending wire brush, then the wafer may be at least one contact member relative to the vertical movement.
  21. 21.根据权利要求4所述的系统,其中该至少一个触头元件包括滚子,该滚子具有平坦的、以使滚子近似垂直于晶片正面的接触面,晶片可相对该至少一个触头部件双向旋转。 21. The system according to claim 4, wherein the at least one contact element comprises a roller, the roller having flat to the roller is approximately perpendicular to the front surface of the wafer contacting the wafer relative to the at least one contact bi-directional rotation member.
  22. 22.根据权利要求4所述的系统,其中该至少一个触头元件包括滚子,该滚子具有圆形的、以使滚子与晶片正面接触的接触面,晶片可相对该至少一个触头部件双向旋转。 22. The system according to claim 4, wherein the at least one contact element comprises a roller, the roller has a circular, so that the contact surface of the roller and the front side of the wafer contacting the wafer relative to the at least one contact bi-directional rotation member.
  23. 23.根据权利要求4所述的系统,其中该至少一个触头元件包括环形触头,该环形触头具有上接触面,并且适合在与晶片正面形成电接触时弯曲,晶片可相对该至少一个触头部件双向旋转。 23. The system according to claim 4, wherein the at least one contact comprising an annular contact element, the contact ring having an upper contact surface and adapted to bend when the electrical contact with the front surface of the wafer, the wafer may be relative to the at least one contact bi-directional rotation member.
  24. 24.根据权利要求4所述的系统,其中该至少一个触头元件包括接触棒,该接触棒通过柔性部件与对应的基座支持部件连接,所述柔性部件适合在与晶片正面形成电接触时弯曲,晶片可相对该至少一个触头部件双向旋转。 24. The system according to claim 4, wherein the at least one contact element comprises a contact rod, which rod is connected by a flexible member into contact with the support member corresponding to the base, the flexible member adapted upon electrical contact with the front surface of the wafer bending the wafer relative to the at least one contact may be bi-directional rotation member.
  25. 25.根据权利要求24所述的系统,其中所述接触棒具有圆形的上接触面,这样使得该接触棒以一倾角与晶片正面接触。 25. The system according to claim 24, wherein the contact rod has a circular contact surface, such that the rod contacting the contact angle to a front surface of the wafer.
  26. 26.一种晶片处理过程中在晶片的正面边缘处与晶片正面的导电层电接触的方法,所述晶片由晶片载架保持,该方法包括:在晶片的处理过程中,在至少一个触头部件与晶片正面边缘上的导电层之间维持电接触;在维持电接触的同时,维持该至少一个触头部件与晶片正面边缘之间的相对旋转运动,从而使得该至少一个触头部件在不同时刻与晶片正面边缘的不同部分电接触;以及在维持电接触和相对旋转运动的同时,同步地发生晶片的横向移动和该至少一个触头部件的另一横向移动,由此维持晶片横向移动过程中的电接触。 26. A method of processing a wafer at the front edge of the electrical wafer and the front conductive layer in contact with the wafer, the wafer held by the wafer carrier, the method comprising: during processing of the wafer, at least one contact maintaining electrical contact between the member and the conductive layer on the front edge of the wafer; while maintaining electrical contact to maintain the relative rotational movement between the at least one contact member and the front edge of the wafer, such that the at least one contact member at different different time and the front portion of the electrical contact with the edge of the wafer; and while maintaining electrical contact and an opposite rotational movement and lateral movement of the contact member of at least one further lateral movement of the wafer takes place in synchronization, thereby maintaining the lateral movement of the wafer in electrical contact.
  27. 27.根据权利要求26所述的方法,其中还包括以下步骤:相对一工件表面改变装置横向移动该至少一个触头部件,其中工件表面改变装置在处理过程中与晶片正面物理接触。 27. A method according to claim 26, further comprising the step of: changing means relative to a workpiece surface the lateral movement of the at least one contact member, wherein the workpiece surface in contact with the front surface means a physical change in the wafer process.
  28. 28.根据权利要求27所述的方法,其中工件表面改变装置是垫板。 28. The method according to claim 27, wherein the changing means is a plate workpiece surface.
  29. 29.根据权利要求27所述的方法,其中该处理是电抛光。 29. The method of claim 27, wherein the process is electropolishing.
  30. 30.根据权利要求27所述的方法,其中该处理是电镀。 30. The method of claim 27, wherein the electroplating process.
  31. 31.根据权利要求27所述的方法,其中还包括垂直移动该至少一个触头部件的步骤。 31. The method according to claim 27, further comprising the step of vertically moving the at least one contact member.
  32. 32.根据权利要求26所述的方法,其中还包括在不让该至少一个触头部件旋转的情况下维持电接触的步骤。 32. The method according to claim 26, further comprising the step of maintaining electrical contact with at least one contact member of the case to prevent rotation.
  33. 33.根据权利要求26所述的方法,其中对晶片的处理是电抛光。 33. The method according to claim 26, wherein the processing of the wafer is electropolished.
  34. 34.根据权利要求26所述的方法,其中对晶片的处理是电淀积。 34. The method according to claim 26, wherein the processing of the wafer is electrodeposition.
  35. 35.一种与晶片背面边缘上的背面导电层形成电接触的系统,位于背面边缘的导电层通过晶片边缘的导电削面与晶片正面布置的正面导电层电接触,晶片由一晶片载架保持,该系统包括:至少一个触头部件,它在晶片的背面边缘处与所述背面导电层电接触,其中该至少一个触头部件与晶片背面边缘之间的相对旋转移动使得该至少一个触头部件在不同时刻与晶片背面边缘的不同部分电接触。 35. A method of forming an electrical system contacts the back surface of the back edge of the conductive layer on the wafer, electrical contacts on the back of the front edge of the conductive layer of the conductive layer through the conductive surfacing disposed to the front of the wafer edge of the wafer, the wafer held by a wafer carrier, the system comprising: at least one contact member, which electrically wafer back surface and the back edges of the contact conductive layer, wherein the at least one relative rotational movement between the contact member and the back edge of the wafer such that the at least one contact member electrically contacting at different times in different parts of the back edge of the wafer.
  36. 36.根据权利要求35所述的系统,其中在维持相对旋转移动的同时发生的晶片横向移动、与该至少一个触头部件的相应的横向移动同步地发生,由此维持晶片横向移动过程中的电接触。 36. The system according to claim 35, wherein the wafer while maintaining the relative rotational movement occurs lateral movement, the lateral movement of the at least one respective contact member in synchronism with the occurrence, thereby to maintain the lateral movement of the wafer electrical contact.
  37. 37.根据权利要求36所述的系统,其中该至少一个触头部件具有与晶片边缘部分的曲率相对应的弯曲形状。 37. The system according to claim 36, wherein the at least one contact member has a curved shape with the curvature of the edge portion of the wafer corresponding.
  38. 38.根据权利要求37所述的系统,其中,除了晶片的横向移动之外,还同步地发生晶片旋转移动之外的任何移动,以及该至少一个触头部件的任何进一步相应移动,由此维持与晶片的电接触。 38. The system according to claim 37, wherein, in addition to the lateral movement of the wafer, but also any further rotational movement of the wafer corresponding to any movement other than the movement, and the at least one contact member in synchronization occurs, thereby maintaining the electrical contact with the wafer.
  39. 39.根据权利要求36所述的系统,其中除了晶片的横向移动之外,还同步发生晶片旋转移动之外的任何移动,以及该至少一个触头部件的任何进一步相应移动,由此维持晶片的电接触。 39. The system according to claim 36, wherein the lateral movement of the wafer in addition, any further movement than the synchronous rotational movement of the wafer, and at least one corresponding moving any further contact member occurs, thereby maintaining the wafer electrical contact.
  40. 40.一种与晶片背面边缘上的导电层形成电接触的方法,该位于背面边缘的导电层还连续布置到晶片正面以及晶片的边缘削面上,晶片由晶片载架保持,该方法包括:在至少一个触头部件与晶片背面边缘处的导电层之间维持电接触,以及在维持电接触的同时,维持该至少一个触头部件与晶片背面边缘之间的相对旋转运动,由此使得该至少一个触头部件在不同时刻与晶片背面边缘的不同部分电接触。 40. A method of forming a conductive layer on the backside edge of the wafer in electrical contact, which is located on the back edge of the continuous conductive layer further disposed to the front edge of the wafer and the cut surface of the wafer, the wafer held by the wafer carrier, the method comprising: at least one contact is maintained between the member and the conductive layer at the edge of the wafer backside electrical contact, while maintaining electrical contact and to maintain the relative rotational movement between the at least one contact member and the back edge of the wafer, thereby causing the at least a contact member electrically contacting different times in different parts of the back edge of the wafer.
  41. 41.根据权利要求40所述的方法,其中,在维持电接触和相对旋转运动的同时,同步地使晶片横向移动、并使该至少一个触头部件作另一横向移动,由此维持晶片横向移动过程中的电接触。 41. The method according to claim 40, wherein, while maintaining electrical contact and the relative rotational movement, lateral movement of the wafer in synchronism, and the at least one further contact member for lateral movement, thereby maintaining the lateral wafer electrical contact during movement.
  42. 42.根据权利要求41所述的方法,其中还包括以下步骤:使该至少一个触头部件相对一工件表面改变装置横向移动,其中工件表面改变装置在处理过程中与晶片正面物理接触。 42. The method according to claim 41, further comprising the step of: the at least one contact member relative to a workpiece surface to change the lateral movement device, wherein the workpiece surface changing means in contact with the wafer front surface physical process.
  43. 43.根据权利要求42所述的方法,其中工件表面改变装置的尺寸使工件表面改变装置在处理过程中完全覆盖晶片的正面。 43. The method according to claim 42, wherein the workpiece surface vary the size of the device so that the surface changing means completely covered in the front side of the wafer processing.
CN 02823385 2001-10-26 2002-10-28 Method and system to provide electrical contacts for electrotreating processes CN1316557C (en)

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