CN1316557C

CN1316557C - Method and system to provide electrical contacts for electrotreating processes

Info

Publication number: CN1316557C
Application number: CNB028233859A
Authority: CN
Inventors: 布伦特·M·巴索尔; 霍玛约恩·泰列; 博格斯洛·A·纳格斯基; 塞浦利安·E·尤佐; 杰弗里·A·博加特
Original assignee: ASM Nutool Inc
Current assignee: ASM Nutool Inc
Priority date: 2001-10-26
Filing date: 2002-10-28
Publication date: 2007-05-16
Anticipated expiration: 2022-10-28
Also published as: KR20040070342A; AU2002350038A1; CN1636266A; WO2003036693A2; TW200300577A; EP1444722A2; JP2005507170A; WO2003036693A3; TWI223848B

Abstract

Systems and methods to provide electrical contacts to a workpiece to facilitate electrotreating processes, including electroplating and electroetching processes are presented.

Description

The method and system that electrically contacts is provided for electric treatment technology

Technical field

Generally, the present invention relates to the semiconductor integrated circuit technology, be specifically related to the electric treatment technology of handling with electroetching such as the whole surface of workpiece is electroplated.

Background technology

Conventional semiconductor devices such as integrated circuit generally comprises Semiconductor substrate (normally silicon substrate), a plurality of insulating intermediate layer (for example silicon dioxide) that forms in order and the conductive path or the interconnection of being made by electric conducting material.Recently, copper and copper alloy is because of its good electromigration and low resistance characteristic, getting most of the attention aspect the material with connecting.Interconnection generally is will to form in the feature pattern (features) of copper and so on conductor filled etching in the insulating intermediate layer and the hole by metallization process.The method for optimizing of copper metallization technology is to electroplate.In integrated circuit, the multilayer interconnection network in the substrate surface horizontal expansion relatively.The interconnection that forms in the pantostrat body utilizes the feature electricity of through hole or contact and so on to connect.

In typical interconnect fabrication processes, at first on Semiconductor substrate, form insulating barrier.Implement Butut and etching technics then, so that in insulating barrier, form feature pattern such as groove, pad (pads) and through hole etc.Then, electro-coppering is to fill all feature patterns.In this electroplating technology, wafer be placed on the wafer carrier, allowing in wetting wafer surface of electrolyte and the electrode, comparative electrode applies negative electrode (-) voltage to wafer surface.General using applies voltage around the contact of wafer perimeter.Contact generally is the electricity sealing, and it is by the anchor clamps and the electrolyte insulation of cover wafers surface perimeter.Anchor clamps hinder copper and are deposited on the contact, but also prevent the peripheral deposit of copper along wafer, and then cause the loss in important interval on the wafer.In semi-conductor industry, this wafer area useless or that discard is called the edge of eliminating.In semiconductor integrated circuit industry, always at the edge of trying hard to reduce the eliminating on the wafer.

In case plating finishes, and will implement the combination of chemico-mechanical polishing (CMP) step, electroetching (or electropolishing) or etch step or these steps, to remove excess copper layer or overload copper or other conductive layers that is positioned on the substrate top surface.This technology makes the copper electric insulation in each feature pattern that is deposited to wafer, thereby has formed interconnection structure.Repeat interconnection process then, the number of plies of number of repetition and desirable interconnection layer as many.

In electroetching technology, the material that remove and conductive electrode all will be dipped in electropolishing or the electroetching solution.Usually want relative conductive electrode to apply anode (just) voltage to the material of desiring to remove.Under the alive effect of institute, these materials dissolve with electrochemical means on wafer surface, are removed then.

No matter adopt in CMP technology, etching technics or the electroetching technology which, dreamboat all is the thickness that reduces the overload copper that will remove by these technology.The importance that overcomes the copper overload problems is confirmed by the technical development that relates to the flat copper layer that approaches of deposit on wafer surface.Usually this planar deposition technology is called electrochemical mechanical deposition (ECMD).In this planar technique; in at least a portion electro-deposition or electroetching technical process, adopt pad, mask or the sweeper (sweeper) that is referred to as surface of the work modifier (WSID); physics contact or close to each other between this moment surface of the work and the WSID, and the generation relative motion.

The deposition technology that utilization can be entire wafer surface deposition material can overcome the edge problem of eliminating.For example, the denomination of invention of application on December 14th, 2000 has been described a kind of technology that realizes comprehensive electric treatment for the first aspect of the U. S. application 09/735546 (total by assignee of the present invention equally) of " Method andApparatus For Making Electrical Contact To Wafer Surface forFull-Face Electroplating or Electropolishing ".Should be pointed out that electric treatment is meant electrochemical process, also call sometimes with other title.Therefore, electric treatment for example comprises electro-deposition or plating, electroetching or electropolishing etc.Apply for January 17 calendar year 2001, denomination of invention has been described such technology for an aspect of the U. S. application 09/760757 (it is common to be similarly assignee of the present invention) of " Method and Apparatus forElectrodeposition of Uniform Film with Minimal Edge Exclusion onSubstrate ": under the surperficial interval situation, do not forming conductive layer because of the electrical contact loss on semiconductor wafer surface.According to cited in these applications, utilize the electrical contact that slidably contacts with wafer, can on wafer surface, realize copper deposit or electroetching, be to produce relative motion between contact and the wafer surface in the processing procedure, just can (comprise the zone that is positioned under the contact) thus and go up deposition materials or remove material from above on the whole work-piece surface.Though previously described electrical contact can meet the demands, but still need to improve structure of contact terminal, to provide than the better consistency of set electrical contact.

Summary of the invention

Presently preferred embodiment described herein comprises with the surface of the work of semiconductor wafer and so on and realizes electrically contacting so that help the electric treatment technology system and method for (comprise and electroplating and electroetching technology).The invention provides improved structure of contact terminal, compare with the traditional electrical contact, it can provide better consistency.

In one embodiment, provide in a kind of wafer processing procedure conductive layer to form the system that electrically contacts at front wafer surface edge and front wafer surface.Described wafer is kept by wafer carrier.This system comprises at least one contact component, and this contact component electrically contacts at the front edge place and the described conductive layer of wafer.Relative rotary motion between this at least one contact component and the front wafer surface edge makes this at least one contact component constantly electrically contact with the different piece at front wafer surface edge in difference.Keep the described simultaneous wafer that moves relative to rotation laterally move and a respective transversal of this at least one contact component moves synchronously and takes place, keep electrically contacting in the horizontal moving process of wafer thus.

In one embodiment, the method that provides in a kind of wafer processing procedure the conductive layer at the front edge place of wafer and front wafer surface to electrically contact.Described wafer is kept by wafer carrier.This method comprises: in the processing procedure of wafer, keep between the conductive layer at least one contact component and the front wafer surface edge and electrically contact.This method also is included in to be kept when electrically contacting, and keeps the relative rotary motion between this at least one contact component and the front wafer surface edge, thereby makes this at least one contact component constantly contact with the different piece at front wafer surface edge in difference.This method also is included in to be kept when electrically contacting with relative rotary motion, synchronously take place wafer laterally move and another of this at least one contact component laterally moves, keep electrically contacting in the horizontal moving process of wafer thus.

In one embodiment, provide the backside conductive layer on a kind of and the chip back surface edge to form the system that electrically contacts.The conductive layer that is positioned at dorsal edge electrically contacts by the conduction bevel of Waffer edge and the front side conductive layer of front wafer surface layout.Wafer is kept by a wafer carrier.This system comprises at least one contact component, and it electrically contacts at the dorsal edge place and the described backside conductive layer of wafer.Moving relative to rotation between this at least one contact component and the chip back surface edge makes this at least one contact component the different piece with the chip back surface edge electrically contacts in the different moment.

In one embodiment, provide the conductive layer on a kind of and the chip back surface edge to form the method that electrically contacts.The conductive layer that is positioned at dorsal edge also is arranged on the edge bevel of front wafer surface and wafer continuously.Wafer is kept by wafer carrier.This method is included in to keep between the conductive layer of at least one contact component and chip back surface edge and electrically contacts, and keep electrically contact in, keep the relative rotary motion between this at least one contact component and the chip back surface edge, make this at least one contact component constantly electrically contact thus with the different piece at chip back surface edge in difference.

Description of drawings

In in conjunction with subsequent figures, will make aforementioned and other features of the present invention, aspect and advantage more obvious by reading following detailed description, in the accompanying drawing:

Fig. 1 represents the perspective view according to the exemplary electric treatment system of presently preferred embodiment;

Fig. 2 and 3 represents to comprise the upward view and the end view of the exemplary electric treatment of Fig. 1 system of a pair of exemplary electrical contact respectively;

Fig. 4 A represents according to present preferred first embodiment and according to the end view of the exemplary contact component of the exemplary electric treatment system of Fig. 1 to 3 to 4C;

Fig. 5 A and 5B are presentation graphs 4A to the exemplary contact component of 4C and Fig. 1 to the interactional view of the workpiece of Fig. 3;

Fig. 6 A represents according to present preferred second embodiment and according to the end view of Fig. 1 to the exemplary contact component of the exemplary electric treatment system of Fig. 3 to 6C;

Fig. 7 A and 7B represent according to present preferred the 3rd embodiment and according to the end view of Fig. 1 to the exemplary contact component of the exemplary electric treatment system of Fig. 3;

Fig. 8 A represents according to present preferred the 4th embodiment and according to the end view of Fig. 1 to the exemplary contact component of the exemplary electric treatment system of Fig. 3 to 8B;

Fig. 9 A represents according to present preferred the 5th embodiment and according to the end view of Fig. 1 to the exemplary contact component of the exemplary electric treatment system of Fig. 3;

Fig. 9 B is the exemplary contact component of presentation graphs 9A and the interactional view of workpiece of Fig. 1 to 3 to 9D;

Figure 10 A and 10B be the end view and the upward view of the exemplary electric treatment system of presentation graphs 1 respectively, and described system comprises a pair of exemplary fixed contact and comprises the contact component erecting device of a shell;

Figure 11 A and 11C be the end view and the upward view of the exemplary electric treatment system of presentation graphs 1 respectively, and described system comprises a pair of exemplary moving contact and comprises the contact component erecting device of a shell;

The detailed end view of a part of erecting device of Figure 11 B presentation graphs 11A and 11C;

Figure 11 D represents another embodiment of crooked shape contact component;

Figure 12 A and 12B be the end view and the upward view of the exemplary electric treatment system of presentation graphs 1 respectively, and described system comprises an a pair of vertically moving exemplary contact component and a contact component erecting device; And

Figure 13 A and 13B are the views that the embodiment of the invention of dorsal part contact is adopted in expression.

Embodiment

Describe the present invention in detail referring now to accompanying drawing, with the illustrative example of these accompanying drawings as the preferred embodiment of the present invention.

Referring now to Fig. 1, its expression is according to the perspective view of the exemplary electric treatment system 100 of presently preferred embodiment.Fig. 1 schematically shows and can implement to electroplate and the exemplary electric treatment system 100 of electroetching technology.Exemplary electric treatment of the present invention system can implement that electroplate on the plane and the system of plane electroetching, for example electrochemical mechanical deposition (ECMD) system or electrochemical machinery etching (ECME) system.Should point out that these systems all are referred to as electrochemical machinery processing (ECMPR) system.This exemplary ECMPR system 100 comprises electrode 102, workpiece 104 and surface of the work modifier (WSID) 106.WSID for example can be mask, mask plate, pad, sweeper or other suitable surface modification device.WSID106 is positioned on cavity or the chamber 107.Solution 108 charges into chamber 107, and contacts with workpiece 104 with electrode 102.If the enforcement plating is perhaps not only implemented plating but also carry out electropolishing, solution 108 will contain the ionic species of desiring depositing metal usually, and contain the additive that helps the high-quality film forming.For plating or plating and etching, for example, exemplary copper electrolyte can be the copper-bath that contains the sector typical additives.If but only implement electropolishing, solution 108 is exactly typical electroetching/polishing solution, and it does not contain the ionic species of the material of desiring to etch away.For the copper electroetching, the solution of the acid of phosphoric acid and so on is very general.Workpiece 104 for example is a silicon chip of desiring the conducting metal (being preferably copper or copper alloy) of plating.Wafer 104 comprises front 109 of desiring plating coating copper and the bottom surface 110 that is kept by the carrier head.Carrier head 111 can be by axle 112 or axle rotation.Axle 112 passes non-rotary axle sleeve 113, is connected on the supporting construction (not shown) with movable manner.When axle 112 and carrier head 111 when Z or directions X move, axle sleeve moves simultaneously with axle 112 and carrier head 111.WSID106 comprises end face 114, bottom surface 115 and the raceway groove 118 or the opening that extend between end face 114 and bottom surface 115.Raceway groove 118 can have any form and arbitrary dimension, perhaps in order to make film more even and form figure arbitrarily on WSID106.Raceway groove 118 can adopt the Any shape that can allow wafer 104 and electrode 102 be communicated with by the WSID106 fluid.Although WSID106 is a rectangle among Fig. 1, it can be configured to any geometry.The denomination of invention of applying in September 20 calendar year 2001 is that the U. S. application 09/960236 (equally also transferring assignee of the present invention) of " Mask Plate Design " discloses various mask plate embodiment.

As noted earlier, exemplary electric treatment system 100 can implement plane or nonplanar plating and plane or nonplanar electroetching.On this meaning, if select the on-plane surface processing method, will allow the front 109 of wafer 104 near the end face 114 of WSID106, but not be in contact with it, so just can implement nonplanar metal deposit.In addition, in one aspect of the invention,, will allow the front 109 of wafer 104 contact with the end face 114 of WSID106 if selected the plane treatment method.Along with plating solution (representing with arrow 108) was carried raceway groove 118, wafer 104 is moved at the end face 114 of positive 109 contact WSID106 or near in the end face 114.Wafer 104 can clockwise or be rotated counterclockwise mobile, perhaps can laterally move along the X-axis of WSID106, and perhaps it not only rotates but also laterally move.Apply under the condition of current potential between wafer 104 and electrode 102, and be full of in existence under solution 108 situations of raceway groove 118, the metal-plated of copper and so on is perhaps got off from top etching to the front 109 of wafer 104.Yet it is to be noted that above-described is wafer 104 rotations and mobile situation, its hypothesis WSID106 is static.It being understood that said system 100 both can allow wafer to move, allow WSID to move again, perhaps allow the two all to move, produce same relative motion effect thus.But easy in order to describe, the present invention is previously described the sort of situation, will continue according to the mode that wafer moves below to describe.

Fig. 2 and 3 is the upward view and the end view of the exemplary electric treatment system 100 of presentation graphs 1 respectively, and this system comprises a pair of exemplary electrical contact 116.Shown in Fig. 2 and 3, in plating or electroetching process, along with wafer 104 moves, promptly laterally moves, rotation or not only rotate but also laterally move, apply negative electrode or anode potential by exposed edge 120 contacted electrical contacts 116 with the front 109 of wafer 104.Electrical contact 116 links to each other with the power supply terminal (not shown) by electric wire 121.According to principle of the present invention, electrical contact 116 comprises unidirectional or two-way contact component.Cited according to Fig. 4 A to 5B, the situation when contact component is preferred for wafer and rotates along clockwise direction or counterclockwise.But, cited according to Fig. 6 A to 9D, show the contact component that is preferred for along this both direction rotation.With reference to Figure 10 A to 12A and below more comprehensively describe, also the electrical contact 116 of system 100 can be made static, transversely movable or vertically moving.

Fig. 4 A to 4C represent according to present preferred first embodiment and according to Fig. 1 to the exemplary contact component 122A of the exemplary electric treatment system 100 of Fig. 3, the end view of 122B.Shown in Fig. 4 A and 4B, contact 122A, 122B comprise pedestal 124 and one or more contact elements 126.In this embodiment, contact elements 126 is the brushes that are made of conductive bristle 128 or wiring harness.For example, bristle 128 can be made of flexible alloys line, Pt alloy wire or stainless steel wire etc.Pedestal 124 is made by copper, stainless steel, titanium etc., and perhaps the brush that is described below covers.Brush 126 is preferably made by the electric conducting material of can not react with used solution (if be used for deposit, will stop the copper plating), perhaps applies with these electric conducting materials.Can adopt material or coatings such as platinum, platinum alloy, Ta, TaN, Ti, TiN.Other embodiment that will describe below these electric conducting materials and consideration item are preferred for.

Although brush 126 can adopt any suitable length, its length can arrive in the scope of 4cm, preferred 2-3cm 1.The distance that the length of brush and bristle were pushed away by wafer surface has determined brush 126 to be applied to the power on the wafer surface.Rule of thumb, brush is long more, and the power that is applied on the wafer is gentle more, and the chance that forms cut along exposed edge shown in Figure 2 120 is just few more.Each contact elements by many bundles, preferred 5 to 20 the bundle, most preferably at least 10 the bundle leads constitute, every bundle lead contains multiple conducting wires, for example 20 to 300, if adopt 0.002 inch thick lead, preferably contain 50 to 200 leads, but this can change as required.In this embodiment because brush 126 is towards right bank, when wafer 104 when above contact elements 126, rotating towards the mode that moves right, preferably adopt contact component 122A.Similarly, when wafer 104 above the brush during towards left bank, preferably adopt contact component 122B.

Shown in Fig. 4 C, in two

contact component

122A and 122B, the inclination angle of brush 126 (with ' A ' expression) is about 45 degree, and the inclination angle is preferably between 30 to 60 degree, although also can adopt any suitable angle like this.Inclination angle ' A ' is to pass the angle that records between the sloping shaft 132 at brush 126 centers at the upper surface 130 of pedestal 124 and symmetry.This inclination angle makes that the bending of brush 126 when wafer 104 contacts with

contact component

122A or 122B is easier, more even.

Fig. 5 A and 5B are that presentation graphs 4A is to the exemplary contact component of 4C and the workpiece 104 interactional views of Fig. 1 to 3.In the operating process, shown in Fig. 5 A and 5B, along with wafer 104 from primary importance ' A ' along moving on to the second place ' B ' apart from d, brush 126 also is pressed down identical apart from d.Long more apart from d, the possibility that is applied to power on the wafer 04 and scratch wafer 104 is just big more.But, angle ' A ' more little (Fig. 4 C), power is just more little, and the chance of scratch wafer 104 is just more little.

Fig. 6 A represents to be preferred for considering the contact component of wafer moving direction to 8B.In the processing procedure, the direction of rotation of wafer is all changing at any time.Fig. 6 A represents according to present preferred second embodiment and according to the end view of the exemplary contact component 136 of the exemplary electric treatment system 100 of Fig. 1 to 3 to 6C.As shown in Figure 6A, in one embodiment, contact component 136 comprise be assembled in the pedestal 140, preferred group installs to a series of contact elements 138 in the base framework.In this embodiment, contact elements 138A is a roller.In addition, shown in Fig. 6 B, roller 138A is preferably dish type, and it has can allow roller 138A form the smooth contact-making surface 139 that electrically contacts with it in the surface that rolls across wafer 104.Because the flat surfaces 139 of roller 138A, when contact component 136 contacted with wafer 104, the roller 138A of this contact component remained on the wafer 104 with perpendicular attitude.Base framework 140 has the first half frameworks 142 and the second half frameworks 144.Roller 138A remains between first half part 142 and second half part 144 movably by pin 146, and described pin runs through the center of roller 138A, and its two ends are fixed on this two and half part 142 and 144.

Fig. 6 C represents selectable roller designs scheme, and roller 138B has circular contact-making surface 150.Similar with above-described roller 138A, roller 138B also remains between first half part 142 and second half part 144 of base framework 140 by a plurality of pins 146.The circular contact-making surface 150 of roller 138B makes them contact with the surface of wafer 104 at a certain angle.In these two designs, roller 138A, 138B can equip suitable mechanical bias mechanism, with the engagement capacity on the surface that strengthens they and wafer 104.This bias structure can be but be not limited to spring that they are arranged on and pin 146 position adjacent, make roller 138A, 138B be offset towards the direction of wafer 104.This biasing mechanism can also help roller 138A, 138B smoothly to move on the surface of wafer 104.

Fig. 7 A represents according to present preferred the 3rd embodiment and according to the end view of the exemplary contact component 152 of the exemplary electric treatment system 100 of Fig. 1 to 3 to 7B.Fig. 7 A and 7B represent to have the contact component 152 of pedestal 154 and contact elements 156.In this embodiment, contact elements 156 is annular contacts of circular structure.Annular contact 156 combines with pedestal 154 by the bottom 158 of contact 156.In this embodiment, the top 160 of contact 156 is preferably made flat.When annular contact was placed on the wafer, it formed physics by top 160 and wafer surface and contacts with electricity.When this annular contact 156 was placed on the wafer, this annular shape acted on the spring force of wafer by generation, had strengthened the contact that forms thus.Shown in Fig. 7 B, in another design, the top 162 of annular contact 156 can be crooked shape or convex.This annular contact is made of conductive line, band or smooth piece.Pedestal 154 is preferably made by electric conducting material.Should be pointed out that the ring among Fig. 7 A and the 7B can be a cavity ring, perhaps in the ring compressible material of foamed material and so on is arranged, so that can support top 160 better.

Fig. 8 A represents according to present preferred the 4th embodiment and according to the end view of the exemplary contact component 166 of the exemplary electric treatment system of Fig. 1 to 3 to 8B.Fig. 8 A represents to have the contact component 166 of pedestal 168 and contact elements 170.Contact elements 170 is contact rods, and it combines with pedestal 168 by at least one pair of compliant member 172 (for example sheet spring).Shown in the end view of Fig. 8 B, rod 170 has circular top 174a, so that contact component is placed on the wafer at a certain angle.Compliant member 172 is pushed rod 170 to wafer, has strengthened contacting between wafer and the contact component thus.Pedestal and compliant member are preferably all made by electric conducting material.Should be pointed out that contact elements 170 is the conductive foils that approach, for example thickness is the metal forming of 25-1000 micron.Under this situation, in order to support this thin foil, replace compliant member 172 with the compressible section (not shown) that is arranged in foamed material between contact elements 170 and the pedestal 168 and so on.

Fig. 9 B is the exemplary contact elements 176 of presentation graphs 9A and the workpiece 104 interactional views of Fig. 1 to 3 to 9D.Fig. 9 A represents can be used as the contact component 176 of two-way contact to 9D.Shown in Fig. 9 A, contact elements 9A comprises pedestal 178 and one or more contact elements 180.In this embodiment, contact elements 180 is the brushes that are made of multi beam conductive bristle 182 or electric wire.For example, bristle 182 can be made of the flexible alloys line of stainless steel lead and so on.Pedestal 178 is preferably made by electric conducting material.The length range of brush 180 is 1 to 5cm, is preferably 2 to 3cm, although also can take any suitable length.The length of brush 180 has determined to act on the power on the brush 180.Rule of thumb, brush is long more, and the power that acts on the wafer 104 is gentle more, so it is just few more to form abrasive chance along exposed edge shown in Figure 2 120.Each contact component by multi beam, preferred 5 to 10 the bundle, most preferably at least 10 the bundle leads constitute, every bundle lead comprises multiple conducting wires, for example between 20 to 300, if adopt 0.002 inch thick lead, preferably include 100 to 200 leads, but this can according to and needs change.Brush preferred angled 30 to 60 degree, shown in Fig. 4 A and 4B, 45 degree that preferably tilt, but also can make its upper surface 184 settings as shown in Fig. 9 A perpendicular to pedestal 178.

To shown in the 9D, contact component 176 can use with the wafer that moves along either direction as Fig. 9 B.Shown in Fig. 9 B, along with rotating wafer in the counterclockwise direction 104 near and contact with brush 180, brush is towards right lateral bending.At this moment, change the direction of rotation of wafer 104 if desired, at first to resemble shown in Fig. 9 C wafer is raised to brush 180 tops.Then, allow wafer 104 be rotated in a clockwise direction, make it near brush 108 simultaneously, brush just can be towards left lateral bending like this.

Return referring to figs. 1 through 3, according to noted earlier, system 100 can comprise static, transversely movable or vertically moving electrical contact structure.In addition, according to noted earlier, each such electrical contact structure all comprises the embodiment of above-mentioned contact elements.

Figure 10 A and 10B be the end view and the upward view of the exemplary electric treatment system 100 of presentation graphs 1 respectively, and this system comprises a pair of exemplary fixed contact 182 and comprises the contact component erecting device of a shell 188.Shown in Figure 10 A and 10B, fixed contact 182 integrates with system 100.Fixed contact 182 can be top any particular contact parts of describing in detail with reference to the foregoing description.The exemplary posts part 184 of fixed contact 182 couples together the shell 188 of fixed contact 182 with containment 100, perhaps it can be fixed on chamber 107 (not shown) simply.It being understood that in this embodiment fixed contact 182 relative WSID106 are static.Fixed contact 182 can be arranged to adjacent with WSID106.Can utilize biasing mechanism (not shown), for example spring to make fixed contact 182, better contact so that allow form between contact 182 and the wafer 104 towards wafer 104 biasing.Figure 10 B utilizes partial bottom view to represent the position of fixed contact 182 relative WSID106 and wafer.Along with wafer 104 rotates clockwise or counterclockwise and moves along directions X, fixed contact 182 contacts the exposed edge 120 of wafer 104.In order to make diagram clearer, institute's drawings attached all not shown with being electrically connected of contact elements formation.Can adopt known approaches and technology is the contact elements power supply.In this embodiment, the predetermined length that fixed contact had is based on size and dimension and the horizontal amount of movement of wafer on WSID of wafer size, WSID106.Should adjust the length of fixed contact, make exposed edge 120 can touch at least some fixed contacts continuously.In addition, shown in Figure 10 A, the height of fixed contact preferably is higher than the level that is located immediately at any solution on the WSID, like this at wafer 104 with before solution from chamber 107 forms any contact, wafer 104 just can contact contact, and by contact voltage is applied on the wafer 104.

Figure 11 A and 11C be the end view and the upward view of the exemplary electric treatment system 100 of presentation graphs 1 respectively, and described system comprises a pair of transversely movable exemplary contact 190 and comprises the contact component erecting device of a guiding mechanism.Transversely movable contact 190 can be top any particular contact parts of describing in detail with reference to the foregoing description.The detailed end view of a part of erecting device of Figure 11 B presentation graphs 11A and 11C.To shown in the 11C, laterally mobile contact 190 can integrate with system 100 as Figure 11 A.Leg portion 192 connects together horizontal mobile contact 190 with guiding mechanism 194.Shown in the cutaway view of Figure 11 B, guiding mechanism 194 is rails, and it is holding the end of leg portion 192, and can allow the end of pillar 192 move along a rail 194.Laterally moving of contact 190 can be by realizing with the carriage release lever 195 that axle sleeve 113 forever combines.When the carrier head moved down, the lower end of bar 195 was inserted in the hole of pillar 192 ends with removably.In the processing procedure, along with carrier head 111 laterally moves along directions X, bar 195 moves pillar 192 in a rail 194, thereby makes contact 190 laterally move with wafer.What can select is, contact 190 links to each other with travel mechanism's (not shown) of controlled device (not shown) control, and described controller can make horizontal mobile corresponding with carrier head 111 of moving of contact 190.Can utilize the spring (not shown) to setover towards wafer 104, so that make the conductivity between contact 190 and the wafer 104 better by contact 190.Figure 11 C utilizes partial bottom view to represent the position of contact 190 relative WSID106 and wafer.Along with wafer 104 rotates clockwise or counterclockwise, and laterally mobile along directions X, and contact 190 passes through to move with wafer 104, and continues to contact with the exposed edge 120 of wafer 104.Therefore, it is so long that they needn't resemble the fixed contact of Figure 10 B, and they also need not to be straight.As represent that contact 190A can be the crooked shape that conforms to the curvature of Waffer edge shown in the embodiment shown in Figure 11 D of contact 190A.Shown in Figure 11 B, the height of fixed contact equally preferably is higher than the level of all solution that are located immediately on the WSID, wafer 104 formed any contact with solution from chamber 107 before, wafer 104 contacted contact, and by contact voltage is applied on the wafer 104 like this.

Figure 12 A and 12B be the end view and the upward view of the exemplary electric treatment system 100 of presentation graphs 1 respectively, this system comprise a pair of can be vertically, a horizontal mobile exemplary contact 196 and a contact component erecting device.Shown in Figure 12 A and 12B, vertically moving contact 196 integrates with system 100.Vertically moving contact 196 can be the particular contact parts of front with reference to the detailed description of the foregoing description.The leg portion 198 of vertically moving contact 196 combines with axle sleeve 113.Just as mentioned above, axle sleeve 113 can be with carrier head vertical moving and laterally mobile along directions X on the Z direction.In the processing procedure, along with carrier head 111 vertical moving on the Z direction, the position of contact 196 and exposed edge 120 keep together.In this embodiment, owing to have only the relative motion between contact 196 and the wafer to rotate, therefore this design makes the operator before processing the pressure between contact 202 and the wafer is adjusted to desirable fixing horizontal, and then pressure is maintained on this desirable level.Do not have relative transverse movement between contact 196 and the wafer 104, this has reduced the mechanical wear that causes owing to contact 196 on exposed edge 120.What can select is, contact 196 can link to each other with travel mechanism's (not shown) of controlled device (not shown) control, and described controller can make the mobile corresponding with the vertical moving of carrier head 111 of contact 196.Can utilize the spring (not shown) to setover towards wafer 104, thereby make the conductivity between contact 196 and the wafer 104 better by contact 196.Figure 12 B utilizes partial bottom view to represent the position of contact 196 relative WSID106 and wafer.Along with wafer 104 rotates clockwise or counterclockwise, and laterally mobile along directions X, and contact 196 continues to contact with the exposed edge 120 of wafer 104.Among this embodiment, in the process that wafer 104 is installed on the carrier head 111, need to leave the right path by contact 196 by mechanism's (not shown).After having adorned wafer 104, contact contacts with its surface physics, starts processing procedure then.Situation about discussing with reference Figure 11 A and 11C is similar, along with wafer 104 rotates clockwise or counterclockwise, laterally moves along directions X simultaneously, and contact 196 continues to contact with the exposed edge 120 of wafer 104 by moving with wafer 104.Therefore, it is so long that they needn't resemble the fixed contact of Figure 10 B, and they also need not to be straight.It has the crooked shape that conforms to the curvature of Waffer edge.

The end view of the exemplary electric treatment system 100 of Figure 13 A presentation graphs 1, this system comprises an exemplary dorsal part contact 202 and associated contact component erecting device.As shown in FIG. 13A, dorsal part contact 202 can integrate with system 100.Dorsal part contact 202 can be the particular contact parts of front with reference to the detailed description of the foregoing description.In this embodiment, wafer 204 has conductive layer 206, generally is inculating crystal layer, and it extends to the back side 212 from positive 208 around bevel (bevel) part 210, so just can keep the electrically contacting of dorsal part contact 202 of wafer 204 and chip back surface.In this embodiment, can connect the contact component that keeps contact 202.The leg portion of dorsal part contact 202 combines with axle sleeve 113.Mention according to top, axle sleeve 113 can be with carrier head vertical moving and laterally moving on directions X on the Z direction.In the processing procedure, along with carrier head 111 vertical moving on the Z direction, the position of contact 196 keeps together with the dorsal edge that exposes all the time.In this embodiment, owing to have only the relative motion between contact 202 and the wafer to rotate, so this design makes the operator before processing the pressure between contact and the wafer is adjusted to desirable fixing horizontal, and then pressure maintained on this desirable level.Do not have relative transverse movement between contact 202 and the wafer 204, thereby reduced mechanical wear.What can select is, contact 202 can link to each other with travel mechanism's (not shown) of controlled device (not shown) control, and described controller can be controlled moving both vertically of carrier head 111.Can utilize the spring (not shown) to setover towards wafer 104, thereby make the conductivity between contact 202 and the wafer 204 better by contact 202.What can select is, shown in the dotted line of Figure 13 A, contact component and dorsal part contact 202 can be arranged in the carrier head 111, like this in case wafer 204 is put on the carrier head 111, just can forms in carrier head 111 and electrically contacts.Be to be noted that also and contact directly can be accomplished on the edge (bevel) of wafer.

Figure 13 B represents to be provided with another embodiment of the system of dorsal part contact.As shown in the figure, the size of WSID106A is all bigger than the wafer of all sizes, and like this, in processing procedure, entire wafer all is exposed to WSID106A and treatment fluid.

The cleaning contact also is one to be considered.On the one hand, in many examples, traditional contact has all applied Cu, Pt, Pd or other material to guarantee reproducibility.But, make them former thereby damaged again because of corrosion etc.If the relative wafer of contact is static, this corrosion will change uniformity, and if contact moves relative to wafer, as in the present invention, uniformity can reach homogenizing.On the other hand, effectively clean contact and can prolong the contact life-span, and can improve the consistency of contact.Cleaning method comprises: in wafer processing procedure, under the situation that electropolishing takes place or do not take place, handled the wafer of some after, in the electropolishing wafer, use and regulate wafer and carry out electropolishing; Perhaps take off contact, and utilize adjusting pad, electropolishing or the operation of other conventional clean that they are cleaned from system.

Although with reference to preferred embodiment the present invention is specifically described, for the person of ordinary skill of the art, it is conspicuous making changes and improvements from form and details under the situation that does not break away from the spirit and scope of the present invention.Attempt to think that claims have comprised these changes and improvements.

Claims

1. the conductive layer at front wafer surface edge and front wafer surface forms the system that electrically contacts in the wafer processing procedure, and described wafer is kept by wafer carrier, and this system comprises:

At least one contact component, this contact component electrically contacts at the front edge place and the described conductive layer of wafer, wherein

Relative rotary motion between this at least one contact component and the front wafer surface edge makes this at least one contact component constantly electrically contact with the different piece at front wafer surface edge in difference; And

Keep the described simultaneous wafer that moves relative to rotation laterally move and a respective transversal of this at least one contact component moves synchronously and takes place, keep electrically contacting in the horizontal moving process of wafer thus.

2. system according to claim 1, wherein said at least one contact component has and the corresponding curved shape of the curvature at front wafer surface edge.

3. system according to claim 2 wherein except laterally the moving of wafer, takes place synchronously also that wafer rotation any outside moving moves and any further corresponding the moving of this at least one contact component, keeps electrically contacting of wafer thus.

4. system according to claim 1, wherein this at least one contact component comprises pedestal holding components and at least one contact elements that is connected with this pedestal holding components, and described at least one contact elements is being kept with the continuous electric of the corresponding exposed edge of front wafer surface and contacted.

5. system according to claim 4, wherein this at least one contact component and described wafer carrier mechanical connection.

6. system according to claim 5, wherein:

By utilizing the rotating shaft link to each other with described wafer carrier to rotate this wafer carrier, thereby obtain describedly to move relative to rotation, and

The non-rotating axle sleeve mechanical connection of described at least one contact component and described wafer carrier.

7. system according to claim 6, wherein this at least one contact component also is fit to laterally move relative to a surface of the work modifier, and wherein this surface of the work modifier contacts with front wafer surface physics in processing procedure.

8. system according to claim 7, wherein the surface of the work modifier is a backing plate.

9. system according to claim 7, wherein this processing is electropolishing.

10. system according to claim 7, wherein this processing is to electroplate.

11. system according to claim 7, wherein this at least one contact component utilizes pillar and described non-rotating axle sleeve mechanical connection, this pillar rests on the guiding mechanism, described guiding mechanism allows described at least one contact component laterally to move relative to the surface of the work modifier, and takes place laterally to keep this at least one contact component when mobile and do corresponding laterally mobile at wafer.

12. system according to claim 11, wherein said guiding mechanism comprises a rail, and described pillar leans against on described the rail by carriage release lever, and described carriage release lever is connected with described axle sleeve.

13. system according to claim 7, wherein the also suitable described relatively surface of the work modifier of this at least one contact component moves both vertically, and wherein this at least one contact component does not rotate.

14. system according to claim 5, wherein this at least one contact component has and the corresponding curved shape of the curvature at front wafer surface edge.

15. system according to claim 1, wherein this at least one contact component also is fit to laterally move relative to a surface of the work modifier, and wherein in the processing procedure, the surface of the work modifier contacts with front wafer surface physics.

16. system according to claim 15, wherein this at least one contact component has and the corresponding curved shape of the curvature at front wafer surface edge.

17. system according to claim 4, wherein this at least one contact elements comprises the brush with bundle conductor.

18. system according to claim 17, the lead of wherein said brush contacts with front wafer surface with an inclination angle, the wafer unidirectional rotation of this at least one contact component relatively like this.

19. system according to claim 17, the lead of wherein said brush is approximately perpendicular to front wafer surface, like this wafer relatively this at least one contact component do two-way rotation.

20. system according to claim 17, the lead of wherein said brush allows crooked, so wafer this at least one contact component vertical moving relatively.

21. system according to claim 4, wherein this at least one contact elements comprises roller, and this roller has the smooth so that roller contact-making surface approximately perpendicular to front wafer surface, the wafer two-way rotation of this at least one contact component relatively.

22. system according to claim 4, wherein this at least one contact elements comprises roller, and this roller has circular so that the contact-making surface that roller contacts with front wafer surface, the wafer two-way rotation of this at least one contact component relatively.

23. system according to claim 4, wherein this at least one contact elements comprises annular contact, this annular contact has last contact-making surface, and is adapted at forming bending when electrically contacting, the wafer two-way rotation of this at least one contact component relatively with front wafer surface.

24. system according to claim 4, wherein this at least one contact elements comprises contact rod, this contact rod is by compliant member and corresponding pedestal holding components connection, described compliant member is adapted at forming bending when electrically contacting, the wafer two-way rotation of this at least one contact component relatively with front wafer surface.

25. system according to claim 24, wherein said contact rod has circular last contact-making surface, makes this contact rod contact with front wafer surface with an inclination angle like this.

26. the method that electrically contacts at the conductive layer of the front edge place of wafer and front wafer surface in the wafer processing procedure, described wafer is kept by wafer carrier, and this method comprises:

In the processing procedure of wafer, between the conductive layer at least one contact component and the front wafer surface edge, keep and electrically contact;

Keep electrically contact in, keep the relative rotary motion between this at least one contact component and the front wafer surface edge, thereby make this at least one contact component constantly electrically contact with the different piece at front wafer surface edge in difference; And

Keep electrically contact with relative rotary motion in, synchronously take place wafer laterally move and another of this at least one contact component laterally moves, keep electrically contacting in the horizontal moving process of wafer thus.

27. method according to claim 26 is wherein further comprising the steps of:

Laterally move this at least one contact component relative to a surface of the work modifier, wherein the surface of the work modifier contacts with front wafer surface physics in processing procedure.

28. method according to claim 27, wherein the surface of the work modifier is a backing plate.

29. method according to claim 27, wherein this processing is electropolishing.

30. method according to claim 27, wherein this processing is to electroplate.

31. method according to claim 27 wherein also comprises the step of this at least one contact component of vertical moving.

32. method according to claim 26 wherein also is included under the situation that does not allow this at least one contact component rotate and keeps the step that electrically contacts.

33. method according to claim 26, wherein the processing to wafer is electropolishing.

34. method according to claim 26, wherein the processing to wafer is an electro-deposition.

35. one kind with the chip back surface edge on backside conductive layer form the system electrically contact, the conductive layer that is positioned at dorsal edge electrically contacts by the conduction bevel of Waffer edge and the front side conductive layer of front wafer surface layout, wafer is kept by a wafer carrier, and this system comprises:

At least one contact component, it electrically contacts at the dorsal edge place and the described backside conductive layer of wafer, and wherein moving relative to rotation between this at least one contact component and the chip back surface edge makes this at least one contact component the different piece with the chip back surface edge electrically contacts in the different moment.

36. system according to claim 35 wherein laterally moves, takes place with corresponding laterally the moving synchronously of this at least one contact component keeping the simultaneous wafer that moves relative to rotation, keeps electrically contacting in the horizontal moving process of wafer thus.

37. system according to claim 36, wherein this at least one contact component has and the Waffer edge corresponding curved shape of curvature partly.

38. according to the described system of claim 37, wherein, except laterally the moving of wafer, any move of wafer rotation outside moving taken place synchronously also, and any further corresponding the moving of this at least one contact component, keep thus and the electrically contacting of wafer.

39. any move of wafer rotation outside moving wherein except laterally the moving of wafer, also takes place in system according to claim 36 synchronously, and any further corresponding the moving of this at least one contact component, keeps electrically contacting of wafer thus.

40. one kind with the chip back surface edge on conductive layer form the method electrically contact, this conductive layer that is positioned at dorsal edge also is arranged on the edge bevel of front wafer surface and wafer continuously, wafer is kept by wafer carrier, this method comprises:

Between the conductive layer of at least one contact component and chip back surface edge, keep and electrically contact, and

Keep electrically contact in, keep the relative rotary motion between this at least one contact component and the chip back surface edge, make this at least one contact component constantly electrically contact thus with the different piece at chip back surface edge in difference.

41. according to the described method of claim 40, wherein, keep electrically contact with relative rotary motion in, wafer is laterally moved and makes this at least one contact component do another and laterally move, keep electrically contacting in the horizontal moving process of wafer thus.

42., wherein further comprising the steps of according to the described method of claim 41:

This at least one contact component is laterally moved relative to a surface of the work modifier, and wherein the surface of the work modifier contacts with front wafer surface physics in processing procedure.

43. according to the described method of claim 42, wherein the size of surface of the work modifier makes the front of surface of the work modifier complete cover wafers in processing procedure.