TW593787B - Electrochemical mechanical processing with advancible sweeper - Google Patents

Abstract

The present invention provides an apparatus for electrochemical mechanical processing of a surface of a workpiece by utilizing a process solution. The apparatus of the present invention includes an electrode touching the process solution, a belt workpiece surface influencing device extended between a supply spool and a receiving spool. During the process, the surface of the workpiece is placed in proximity of the workpiece surface influencing device and the process solution is flowed through the process section and onto the surface while a potential difference is applied between the electrode and the surface of the workpiece.

Description

(Explanation of the invention should state: brief description of the technical range, prior art, content, implementation, and circle of the invention) L · W i ^ ff Λ j FIELD OF THE INVENTION The present invention relates generally to a semiconductor integrated circuit technology. And in particular, it relates to a device for electrically or electrochemically treating a work piece. C Prior Art 3 BACKGROUND OF THE INVENTION Conventional semiconductor devices such as integrated circuits (ICs) typically include a semiconductor substrate, typically a 10-square-silicon substrate, and a layer of conductive material, a layer of conductive material, mostly separated by an insulating layer, or The interconnecting portions form a wiring network of the integrated circuit. Each layer of the conductor system in the wiring network is isolated from the conductors of adjacent layers by the insulating layers of the commonly known intermediate layer dielectric. A dielectric material commonly used in silicon integrated circuits is silicon dioxide, but at least some standard dense silicon dioxide has been used in IC structures such as organic, inorganic, spin, and CVD options. The trend is to replace low-k dielectric materials. In the past, a 1C connection was formed by filling a conductor like copper with a metallization process into most members or recesses etched into the dielectric intermediate layer. Because of its low impedance and good electromigration properties, copper is a better conductor for interconnect applications. The preferred method for copper metallization is electroplating. In integrated circuits, in continuous layers The formed interconnecting portions can be electrically connected using components such as through holes or contacts. In a typical interconnection process, an insulating layer is first formed on the semiconductor substrate, and then a patterning and M process is performed to form components such as trenches, trenches, and vias in the insulating layer. Then, copper is electroplated to fill all the components. In these electroplating processes, the wafer is placed on a wafer carrier and a cathode 相对 voltage is applied to the surface of the wafer, and the electrolyte is applied to the wafer. Wet both the wafer surface and the electrode. 5 Once the bond is completed, a material removal step is performed like a chemical mechanical polishing (CMP) step to remove the excess, also called the copper cover, from the top surface of the work piece (also known as the field area). Copper layer, and only copper is left in these components. Then another material removal step can be performed to remove other conductive layers such as barriers / adhesive layers on the field area. In this way, it can be produced to deposit within these components and be physically and electrically insulated from each other. Copper deposits. Other conventional etching methods can also be used, and there are also methods that can remove both copper and barrier / adhesive layer from the field area in one step. A special CMP device that functions effectively is disclosed in U.S. Patent No. 6,103,628 entitled "Inverse Linear Polisher with Refillable Housing". 15 The disadvantages of the conventional material removal method can be reduced or eliminated by using a planar deposition method that can provide multiple layers of thin planar conductive materials on the surface of the work piece, and a planar removal method. These planar deposition and removal methods can also be applied to the through-resist process used in 1C packages. In these applications, the plating layer is formed in the openings in the resist layer and exposed in the holes at 20 ° C. Or on the seed film on the bottom of the opening. One method commonly known as electrochemical mechanical processing (ECMPR) includes both electrochemical mechanical deposition (ECMD) and electrochemical mechanical etching (ECME), also known as electrochemical mechanical polishing. It should be noted here that both ECMD and ECME are commonly referred to as electrochemical mechanical processing (ECMPR) because both

Both involve electrochemical processes and mechanical actions. In the ECMPR process, when the surface of the work piece and the work piece surface-acting device (WSID) such as a pad, a mask, or a remover have physical contact or are close to and relatively moved WSID can be used at least when part of the electrical processing process is performed. A description of various methods and apparatuses for planar deposition and planar rice carving can be found in the following patents and applications commonly owned by the assignee of the present invention, namely ,. Whether using a CMP process, an etch process, or an electro-etch process, it is necessary to reduce the thickness of the copper cover layer that must be removed using these processes. The importance of overcoming the problem of copper overlays can be confirmed by the technological development of ㈣ deposition of flat and thin copper layers on the wafer surfaces. These planar deposition techniques are commonly referred to as, in these planarization processes, the name is " Method and device for electrochemical mechanical deposition, US Patent No. 6,176,992: filed on December 8, 2004 and named "Additives deposited on the top surface using an external action and— An electric smelting method and device that produces a difference between the surfaces of work pieces, US Application No. 74〇, 7〇1; and a request filed on September 2G and named "for controlling the work piece" The key method and device for depositing on the predetermined part, and the beautiful time please file No. Una U93. These methods can be used to deposit metal in a planar manner in the recess of the work piece or a novel structure on the recess. They also have the ability, if necessary, to generate excess metal on these components, regardless of the size of the components. In the ECMD method, the surface of the work piece is wetted with electrolyte and relatively pure electrolyte μ of The electrode has a stunt, which usually

593787 Generates a deposit of conductive material within the component of the work piece and a thin layer on the top surface of the work piece. At ECMD, when the removal of the surface of the work piece occurs between the surface of the work piece and the WSID, the wafer surface is pushed against or against the surface of the WSID or vice versa. As described in the aforementioned patent application 5, planar deposition is achieved due to the removal effect. In the ECME method, the surface of the work piece is wetted by the electrolyte or etching solution, but a reverse voltage is applied, so that the surface of the work piece is more anodic than the electrode. If no voltage difference is applied, the remainder is chemically etched and can be carried out with physical contact or close contact between the work piece and the WSID. This chemical etching can be performed using a processing solution or an etching solution. Very thin planar deposits can be deposited by first using an ECMD method and then using an ECME method on a planar film in the same electrolyte by reversing the applied voltage, or the ECME step can be 15 By performing in another machine with a different etching solution, the thickness of the deposit can be reduced in a planar manner. In fact, an ECME method can continue until all metals in the field area are removed. It should be noted here that the WSID can be used or not used in the electro-etching or etching process, because the etching of a substantially flat surface can be achieved with or without the WSID. Fig. 1A is a schematic diagram of a conventional ECMPR system 100 for processing wafers. In Fig. 1A, a WSID 102 having a plurality of holes 104 therein is disposed near a work piece or wafer 106 to be processed. The wafer 106 is a silicon wafer to be electroplated with a conductive material, preferably copper or a copper alloy. The wafer 106 is held by a wafer carrier 111 to hold the wafer 9 593787.

The square surface 112 is positioned against the top surface 113 of the WSID 102. The holes 104 are designed so that copper can be evenly deposited on the front surface 112 by an electrolyte indicated by an arrow 114, or can be uniformly electrically etched from the front surface 112. The perforations 110 can be precisely or imprecisely matched to the structure of the holes 104. Generally, the holes 104 are designed for uniform deposition, and the perforations 110 allow the electric field and the electrolyte to pass substantially unhindered. The WSID102. Therefore, the perforated area of the support plate 108 per unit area is equal to or greater than the area of the WSID 102 hole per unit area. The top surface 113 of the WSID 102 facing the front surface 112 of the wafer is used as a clear 10 And the WSID 102 itself establishes an appropriate electrolyte flow and electric field flow to the front surface 112 to achieve the purpose of uniform deposition or etching throughout. The ECMPR system 100 also includes an electrode 116 immersed in an electrolyte 114, and the electrolyte 114 is fluid with the electrode 116 and the front surface 112 of the wafer 106 through a hole 104 in the WSID 102. Ground Connected. 15 The electrode 116 is usually a copper block for copper deposition. It may also be made of an inert electrode such as Pt coated with Ti. A copper electrolyte may be a copper sulfate solution, which has additives such as accelerators, inhibitors, leveling agents, gas, and general users in the industry. In a planar deposition method such as ECMD, the leveling agent is not necessary, and the leveling can be automatically performed by the process. 2〇 But leveling agent can still be used to optimize other processing results such as gap filling. The top surface 113 of the WSID 102 is swept across the front surface 112 of the wafer and a potential difference is generated between the electrode 116 and the front surface 112 of the wafer. In order to deposit a planar film such as copper, the wafer 106 is made relatively The electrode 116 that becomes the anode is more cathodic (negative). To be in the same ECMPR system 10

593787 In the electrical system, the surface of the wafer is made more anodic than the electrode. In order to perform chemical etching, chemical etching or etching, a potential difference is applied between the wafer and the electrode. As shown in FIG. 1B, the structure of the WSID 102 may have a top layer 5 120, a middle layer 122, and a bottom layer 124. The top layer 120 is preferably made of an abrasive material such as a fixed abrasive film provided by 3M Company, or other so-called pad materials used in CMP applications such as the IC-1000 material provided by Rodel Company. The thickness of the top layer 120 is usually in the range of 0.05-2mm, the intermediate layer 122 is the mounting layer of the top layer 120, and the 10 intermediate layer 122 is usually made of a hard plastic such as polycarbonate with a thickness ranging from 1 to 3mm. The bottom layer 124 is used as a pressure layer for the entire structure. The bottom layer 124 is made of a polymer foam material such as polyurethane or polypropylene. Examples of various WSIDs are disclosed in U.S. Patent Nos. 6,413,403 and 6,413,388 assigned to the assignee of the present invention, and U.S. Application No. 09 / 960,236, filed on September 20, 2001 and entitled "Mask Structure" Embodiments of various WSIDs are disclosed. In addition, US Application No. 10 / 155,828, filed on May 23, 2002 and entitled "Low-Electrochemical Mechanical Deposition Method and Apparatus," discloses a flexible and highly flexible layer connected to a highly compressible layer. The top-level WSID structure is ground, and both of these 20 applications are assigned to the assignee of the present invention. The WSID is placed on a porous support plate which may or may not be an integral part of the WSID. In this particular structure, the electrolyte system flows through most of the holes or perforations of the compressible layer and is flexible. Holes in layers. However, to this end, although these methods help in the work piece and 11 593787

A planar metal deposit or a novel metal structure is obtained on the wafer, but there is still a need for a method and apparatus that can produce a high yield with better uniformity and high yield. 5 SUMMARY Therefore, the present invention provides a method for electrification by using a processing solution. Mechanical treatment-a device for the surface of a work piece, the device of the invention comprises an electrode contacting the treatment solution, a belt-type work piece surface acting device extending between a supply reel and a receiving reel. In addition, the 10 processing section of the work piece surface acting device is disposed near the surface of the work piece, and the processing solution flows through the processing section and onto the surface of the work piece. During processing, a voltage difference can be maintained between the electrode and the surface of the work piece. When the solution flows through the work piece surface acting device, a mechanism moves the processing section of the work piece surface acting device β 15 In addition, the present invention provides a method for electrochemical mechanically treating a work piece surface, the method comprising providing A work piece surface acting device having a channel pattern. The work piece surface acting device extends between and is connected between a supply reel and a receiving reel. The work piece is placed near the first processing section of the work piece surface acting device, and a processing solution flows through the channel of the first processing section of the work piece surface acting device and flows onto the surface of the work piece. . When the relative movement between the first processing section of the X-workpiece surface acting device and the work piece surface occurs during the chemical mechanical treatment, the surface is chemically mechanically treated. During processing, a potential difference is maintained between the electrode and the work piece. 12

593787 An object of the present invention is to provide a belt-type wsid structure, which helps to provide a metal layer with better uniformity. Another object of the present invention is to provide a belt-type wsid structure having a plurality of holes or channels located in groups in most sections of the belt-type WSID 5 ° The present invention is to use a belt-type in an electrochemical mechanical processing device WSID serves these and other purposes of the invention singly or in combination. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A is a schematic diagram of a conventional ECMPR system; 10 FIG. 1B is a schematic diagram of a surface-acting device of a work piece; FIG. 2A is a schematic diagram of a surface region having a substrate surface in which most components are formed Figure 2B is a schematic view of the substrate shown in Figure 2A, in which copper has been deposited on the surface of the substrate;

15 Figure 3 is a schematic diagram of an ECMPR system using a surface acting device of a belt work piece; Figure 4A is a schematic diagram of a processing section of the surface acting device of the belt work piece; Figure 4B is a surface acting device of another belt work piece Schematic diagram of the processing section 20 of the device; Figure 5 is a schematic diagram of a surface-acting device with a majority of processing sections with the same channel pattern, where the processing sections are not separated. Figure 6 is a diagram with a majority of 13 of the processing section of the same channel pattern

Schematic diagram of the surface acting device of the workpiece, where the processing sections are separated 593787. Figure 7 is a schematic diagram of the surface acting device of the workpiece with most processing sections with different channel patterns; Figure 8 is in Figure 3. The schematic diagram of the electrical contact position in the ECMPR system shown in FIG. 9; FIG. 9 is the schematic diagram of the adjustment device of the surface-acting device of the work piece of the present invention;

Figures 10A-12 are schematic diagrams of the surface acting device of the belt type work piece; Figures 13A-13C are schematic diagrams of another belt type supporting device; and Figures 14A-14B are schematic diagrams of the surface acting device of most work pieces. tEmbodiment; J Detailed description The following will use the example of manufacturing interconnected parts of integrated circuit applications to illustrate the preferred embodiment 15; however, it should be understood here that the present invention can be used in applications such as Au, Ag, Ni, Pt, Pd, Fe, Sn, Cr, Pb, Zn, Co, and other electroplating materials and alloys with other materials are operated on the work piece to perform many different applications such as packaging, flat panel displays, magnetic heads, and so on. In the example described below, the illustrated material to be plated is described with copper 20, but it should be understood here that other materials may be used instead. In addition, this preferred embodiment will be explained in the text of the deposition plane layer, as in the above ECMPR patents and applications, other novel structures that also require electrical engraving, chemical etching and other processing can also be obtained using the present invention. In one embodiment, for example, a planar conductive layer uses one of the present invention 14

593787 The tape WSID structure is formed on a wafer surface by an ECMD process. Other structures may also be formed using low-force electro-chemical mechanical etching (ECME) as described in the aforementioned application. A detailed structure 5 of the surface area of a substrate 200 treated in accordance with the present invention is shown in Figures 2A-2B. The substrate 200 includes a patterning of an insulating layer preferably formed on a work piece 204. Layer 202, which can be formed of an insulating material such as silicon oxide and formed using conventional patterning and etching methods suitable for metal interconnect structure rules. In this embodiment, the insulating layer 202 may include a plurality of recessed holes or gaps, that is, a first recessed hole 206 and a second recessed hole 208 that are separated from each other by the field region 210. In this embodiment, the recesses The hole may be formed so that the first recessed hole 206 may be a through hole, and the second recessed hole 208 may be a groove including a second through hole 209 at the bottom. The top surface 210 is also referred to as a field region, and one or more barriers or glue layers 217 having a material such as Ta, TaN, Ti, TiN, or WN coat the recesses and 15 the top surfaces. A copper thin film 218 is coated on the top surface of the barrier layer of the subsequent copper plating layer to become a seed layer. The copper seed layer provides a base layer, and the nucleation and growth of the subsequent deposited layer can be formed on the base. Performed on layers. Referring to FIG. 2B, a planar copper layer 220 may be deposited in the recessed holes 206, 208, 209 and on the field region 210. The deposition process and other processes implemented using the present invention are described below. FIG. 3 shows an embodiment of an ECMPR system 300 including a belt WSID assembly 301 and a carrier head 302 of the present invention. The belt WSID assembly 301 includes an upper surface 304 or a treated surface and a back surface. 306 and a set of rollers 308 have a WSID band 303. The WSID band can be flexed 15

593787 is made of a non-ferrous material and preferably has an abrasive surface for cleaning. The tape WSID may have a plurality of holes 314 or channels to allow a treatment solution such as a plating solution or an electroetching solution indicated by arrow 316 at an electrode 317 flows between a work piece 320 or a wafer front surface 318. For the purpose of clarity, the containers or recesses holding the treatment solution are not shown in the figure. The front surface 318 of the wafer may include the substrate shown in Figs. 2A-2B. As described below, the processing surface of the tape 303 may also include a protruding surface for cleaning operations (see Fig. 4B). The belt WSID303 is moved on the rollers 308 10 in a one-way or two-way manner by a moving mechanism (not shown). The belt WSID can be moved close to the crystal during the electro-etching or electrodeposition process. Round the front surface, the tape WSID can be moved on the front surface of the wafer to remove the front surface during the electrical etching or plating. The moving mechanism also appropriately stretches the belt WSID303 to actually contact the surface of the work piece during ECMPR. The back surface 306 of the belt WSID303 is placed on the top surface 307 of a plate 309. Multi-layered composition. In this embodiment, the plate 309 is formed by an upper layer 322 and a lower layer 324. The upper layer 322 may be made of a compressible material, and the lower layer 322 is a support layer and made of a rigid material, so it This compressible layer can be supported. The majority of holes 310A in the compressible layer and the majority of holes 310B in the rigid 20 layer allow the treatment solution to flow through the plate 309. In addition, the compressible layer 322 may have a plurality of pores 310 or may be made of a porous material that allows the treatment solution to flow through its pores. The belt WSID is stretched on the top surface of the plate, so the top surface 307 of the plate 309 is completely in contact with the bottom surface portion of the belt WSID covering the top surface 307. If necessary, when the 16

593787 When the belt WSID moves in the upper layer, the bottom surface of the belt WSID slides on the upper surface of the plate and the treatment solution 316 flows through the plate and the belt WSID303. The belt WSID may be made of a polymer film that is commonly used in a CMP process and a fixed abrasive film commercially available from 5 3M. The flexible material of the belt WSID is thin and has a thickness of 0.2-2 mm. Thickness range. The belt-type WSID also has a composite structure with most thin layers. The tape WSID can have a fairly flat surface, such as a 10-lap film containing abrasive particles of 0.05-0.5 micron size (purchased by, for example, Buehler or 3M), or a small diameter post with a flat top surface or Such as the use of pyramid cones in the fixed polishing pad provided by 3M company. The surface of the belt WSID is preferably abrasive to sufficiently remove the surface of the work piece. The upper layer of the board is made of a foam or gel material that can be easily compressed under a force and returns to its original shape once the force is released. 15 The upper layer of the board has a thickness range of 1-5mm, Examples of these materials include polyurethane, polypropylene, rubber, EVA, and mixtures thereof. The lower layer of the plate is a porous plate or it has a plurality of holes to allow the electrolyte and electric field to flow freely toward the surface of the substrate. The lower layer 324 may itself be the electrode. 20 During processing, the wafer 320 is held by the carrier head and next to the tape WSID, so that the processing solution flowing through the plate 309 and the tape WSID303 wets the front surface of the wafer. As shown in the exploded view of FIG. 4A, the wafer 320 is processed on a predetermined area 321 or a processing area of the processing surface of the tape WSID303. When the tape is tightened on the top surface of the board 17

Above 593787 307, the compressible layer pushes the band up. In addition, if the wafer 320 is in contact with the processing surface, the compressible layer pushes the wafer against the front surface of the wafer. The processing area 321 is updated by advancing the tape WSID, so a used processing area can be wound by winding the 5 used processing area on the storage reel 312 and thus the new processing area Pulled out by the supply reel 311 and replaced by a new processing area, the belt can be advanced after processing approximately 20-100 wafers or before intensive use of the same WSID area begins to affect the process result in a negative way . Because of this feature, the belt WSID303 can reduce manufacturing time and increase system throughput. Alternatively, the position of the WSID can be changed in a small amount or the WSID can be gradually advanced. During processing, the wafer carrier 304 can move the wafer laterally on or above the tape WSID 303 and use the The rotation axis z rotates around the center. As described above, the tape WSID of the present invention can also be moved laterally in 15 directions when the wafer is moved by the carrier head thereon. In another embodiment, the belt may be an endless or continuous belt rotated by a plurality of rollers instead of storage and supply reels, and the belt is wound around and tensioned. In this embodiment, the rollers are rotated by a drive system and the rotation of the rollers causes the tape to move linearly relative to the surface of the wafer being processed. 20 Also, as shown in Figure 4A, the width of the tape WSID should be smaller than the diameter of the wafer to be processed. As described below, this characteristic of the tape can be (Not shown). For a chemical etching process, the width of the WSID may be equal to or greater than the diameter of the crystal circle, as no electrical contact is required. The tape WSID can be 18

593787 is a single layer or a composite layer structure composed of one or more layers. If the tape includes one or more layers, these layers may or may not be the same size. However, the total thickness of this composite layer is usually 0.5-2 mm. As shown in the perspective view of FIG. 4B, a WSID500 may have a 5 protruding surface 502 smaller than the top surface 504 of the WSID500. In this embodiment, the cleaning action is performed by the protruding surface 502, the protruding surface 502 It is better to include an abrasive layer. The ECMPR system 300 in FIG. 3 can perform planar or non-planar plating and planar and non-planar electro-etching. In this way, if a non-planar processing method is selected, the front surface of the wafer will be close to the processing of the tape 10 WSID303 Surface, but not touching it, allowing non-planar metal deposition. In addition, if planar processing is selected, when a relative movement occurs between the tape WSID and the front surface of the wafer, the front surface of the wafer contacts the processing surface. When the processing solution is transferred through a hole in the tape, the tape moves laterally or the wafer rotates and moves laterally 15 or when the front surface contacts the processing surface, both the tape WSID and the wafer are mobile. When a voltage is applied between the wafer and the electrode, and in the presence of a processing solution rising through the tape WSID303, the metal such as copper is based on the voltage between the wafer surface and the electrode. It is electroplated on the front surface of the wafer or removed by etching 20 °. Figures 5 to 7 show the structure of various processing areas. According to the principle of the present invention, the tape WSID can be formed along the tape. The continuous pattern of the type WSID or one or more patterns of multiple sets of holes or channels along the pattern repeated on the strip WSID, as shown in Figure 5. In one embodiment, a strip WSID 330 19 593787

It may have a channel 332 formed in a continuous pattern extending along the belt WSID 330. In this particular structure, the channels 332 are shaped as mostly parallel slots, but they can also be shaped as holes or holes with various geometries or radial structures. In this embodiment, depending on the processing requirements and the size of the wafer, most processing regions 334 can extend end-to-end. The tape WSID330 can be moved laterally on the board to perform mechanical cleaning actions. After some wafers are processed on the same processing area, the tape WSID 330 advances to obtain a new processing area, or the tape can During processing, it is moved piece by piece in a specific direction. In this way, a new 10-band WSID section is moved into the processing area in a continuous manner. As shown in another embodiment in FIG. 6, a belt WSID 336 may have channels 338 divided into groups in separate processing areas 338. 'After each use, the processing areas advance to perform a new process. Area to replace them. In the case of such a belt, the lateral movement during processing is mainly provided by the wafer carrier.

Although the belt WSID may have a single channel pattern extending along the belt WSID as shown in Figs. 5 and 6, the belt WSID may also include a plurality of hole or channel patterns. As shown in Fig. 7, the one-belt WSID 340 may have most of the processing areas 342A-342D containing most of the channels 20 344 having different sizes and shapes, and most of the protruding areas on these processing areas for performing the cleaning action. For example, the processing region 342A includes a plurality of channels 344 shaped as circular holes, and the processing region 342B includes a plurality of channels 344 shaped as slots, and the processing region 342C includes channels 344 having a radial pattern and the Processing area 342D contains shape 20

593787 becomes the passage 344 for most rectangular holes. The shape and size of the channels 344 in each processing area 342A-342D may also be different and how they are distributed on the special processing area may also be different, by advancing or rewinding the belt WSID of the special processing area Each processing area can be used repeatedly for 5 ECMD or ECME or chemical etching treatment. By making the channels have a specific shape and distribution, the contour of the copper layer can be controlled. By using a specific processing area, the thickness profile of the copper layer can be made uniform or can be changed to a necessary profile. For example, in an operation sequence, the wafer may first be subjected to ECMD processing on the processing region 342A, and then the same wafer may be subjected to ECME processing or chemical mechanical etching to etch back the plane on the processing region 342B. Copper layer. In this example, the processing region 342A may have a channel pattern suitable for an ECMD process that produces uniform deposition, and the processing region 342B may have a channel pattern suitable for an ECME or CME process that produces a uniform material etch or removal effect. . 15 In the ECMPR, there is a voltage between the front surface of the wafer and the electrode 317. As shown in the side view of the system 300 in FIG. 8, the front surface of the wafer 320 passes through the front of the wafer. The contact area 350 on the peripheral surface of the square surface 318 contacts and slides on it, and is connected to a power source (not shown). These contacts are disclosed in U.S. Patent Application No. 09 / 760,757, filed on January 17, 2001 and entitled "Method and Apparatus for Electrodepositing a Uniform Film with a Minimum Edge Exclusion Area on a Substrate" US Patent Provisional Application No. 60 / 348,758, filed on October 26, 2001 and titled "Method and System for Providing Electrical Contacts for Electrical Processing Processes", and these two applications are subject to the present invention. Make People Common 21

have. 593787 In the processing step concerning the WSID immediately and usually contacting the front surface of the wafer, small particles of metal on the front surface or non-conductive particles from these sources may be attached to the WSID material. These particles 5 may exist because they are only removed from the surface of the substrate or they may be generated from the plating solution due to poor filtering of the plating solution. These particles may be cleaned using the adjusting device of the present invention, as As shown in FIG. 9, the carrier head 302 may include an adjusting device 360 having a brush 362. As shown in the figure, as shown in the figure, the brushes 362 are disposed on the periphery of the carrier head 302. The brush 362 is used to adjust the band WSID303 by removing particles mechanically and removing them. In this embodiment, the adjustment of the ECMPR process on the work piece 320, whether it is ECMD or ECME, and the adjustment of the belt type WSID303 can occur at the same time and in the same process. In this special case, in order to adjust the entire belt WSID303, the lateral movement of the carrier head 302 15 or the belt WSID303 should preferably be equal to or larger than the radius of the carrier head 302, so the carrier can be effectively cleaned The WSID part covered by the header. Alternatively, the adjustment brushes are not attached to the head, but they are placed outside the end of an area swept by the lateral movement of the head using a suitable device, and then the band can be moved to make the entire length of the processing area It can be surely brushed by such adjustment brushes. Figures 10A-12 show various embodiments of the tape WSID. Figure 10A shows a tape WSID400 in an ECMPR system 402. As detailed in Figure 10B, the tape WSID400 consists of a tape with a top layer 404. Formed with a double layer structure connected to the bottom layer 406 of the top layer, the top layer 404 22 593787

It may be an abrasive layer or a layer containing abrasive particles, and the bottom layer 406 is a compressible layer. Most of the channels 408 are formed through the band 400 so that a processing solution 407 flows between an electrode 408 and a front surface 410 of a wafer 412. Please refer to FIG. 10A. In use, the band 400 is compressible. 5 The drawdown is placed on a plate 414 of the system 402, which contains a plurality of channels 416 to allow the treatment solution to flow through the plate. During processing, the compressible layer of the tape supported by the system's rigid board pushes the tape towards the wafer. In this embodiment, unlike the previous embodiment, the compressible layer is an integral part of the tape WSID. In this example and the foregoing example, the surface interface between the compressible layer and the 10 plate 414 should be a low-friction interface. For the belts of the above embodiments, the thickness of the top layer should be 0.2-2mm and the thickness of the bottom layer is usually 1-5mm. The two layers are glued together, and the dimensions of the channels are made to allow Fluid flows through it.

FIG. 11A shows a belt 15 WSID420 in an ECMPR system 422. As detailed in FIG. 11B., The belt WSID420 is a single layer which can be a polishing layer or a layer containing abrasive particles. Make up. The channel 424 is formed through the band 420 to allow a treatment solution 426 to flow between an electrode 428 and a front surface 430 of a wafer 432. Please refer to FIG. 11A. On a roller system 434 having a plurality of rollers 436 placed on a frame 438, the frame is immersed in the processing solution and allows the processing solution to flow through the roller system. The rollers are placed side by side along the width of the tape and they can be moved up and down as the wafer contacts the tape during the process. During processing, the roller system pushes the belt against the wafer and has the same compressibility as shown in the previous embodiment 23

593787 layer role. The roller surface may preferably contain a compressible material to establish contact between the wafer surface and the belt surface. FIG. 12 shows a belt WSID440 in an ECMPR system 442. The belt WSID440 is composed of a single layer which can be an abrasive layer or a layer containing 5 abrasive particles. A plurality of channels 444 are formed through the strip 440 so that a processing solution 446 flows between an electrode 448 and a front surface 451 of a wafer 452. The processing solution is stored in a container (not shown). The belt is supported on the top 450 of the side wall of the container during the process. In addition, the flow pressure of the processing solution pushes the strip against the wafer and provides another support. The pressure of the solution has the effect of the compressible layer as shown in the previous embodiment. Figures 13A-13C show various additional mechanisms to support the band 440 described in the previous embodiment shown in Figure 12. As shown in Figure 13A, the band WSID440 can also be majority Hollow spheres 452 below the band 440 and floating on the processing solution 446 and surrounded by the top 450 of the processing container wall, these spheres may be filled with a gas such as air or a lighter gas. In addition to the pressure of the solution, the sphere 452 adds an additional compressible support to the band. In Figure 13B, the same effect can be achieved by using a floatable layer 454, which is placed under the belt 440 and has a majority of channels 456 through which the treatment solution 446 can flow. . The floatable layer 454 may be made of a sponge-like material like polyurethane, and the floatable layer may also have air bladders (not shown). In addition, as shown in FIG. 13C, the floatable layer 454 and the spheres 452 are placed under the belt 440 to reach 24.

For the same purpose. 593787 Figures 14A and 14B show a multiple WSID system 600 including a first tape WSID602 and a second tape WSID604 near the first tape WSID. If necessary, the system 600 may have more than two Of 5 WSID band. The system 600 enables a wafer 606 to be processed on both the strips 602 and 604 during processing. The strips 602, 604 may have repeating channel patterns as shown in Figures 5 and 6. The strips may also have different channel patterns designed for different thickness distributions. For example, the first step of the process may be to use a method of generating an edge thickness deposition profile on the first strip 602 10 ECMD, and then The strip 604 can be used in an ECME step to reduce the overall thickness of the deposit. The pattern of the tape 604 can be etched away from the edge portions to create more uniform thickness contours, and the process can continue on the first tape if necessary and vice versa. Although various preferred embodiments have been described in detail, those with ordinary knowledge in the field of the art 15 can easily understand that there can be many embodiments cited without substantially deviating from the new teachings and advantages of the present invention. Variations. Brief description of L diagram 3 FIG. 1A is a schematic diagram of a conventional ECMPR system; 20 FIG. 1B is a schematic diagram of a surface acting device of a work piece; and FIG. 2A is a surface region having a substrate surface in which most components are formed Figure 2B is a schematic view of the substrate shown in Figure 2A, in which copper has been deposited on the surface of the substrate, 25

Figure 3 of ECMPR: a schematic diagram of the surface acting system using a belt work piece;-Figure 4A is a schematic view of the processing section of the surface acting device of the belt work piece; Figure 4B is the surface of another belt work piece Schematic diagram of the processing section of the acting device; Figure 5: a schematic diagram of the workpiece surface acting device with most processing sections with the same channel pattern, wherein the processing sections are not separated; Figure 6: a majority having the same Schematic diagram of the work piece surface acting device of the processing section of the channel pattern, wherein the processing sections are separated. 'FIG. 7 is a schematic diagram of the work piece surface acting device having most processing sections with different channel patterns; Figure 8 is a schematic diagram of the electrical contact position in the ECMPR system shown in Figure 3; Figure 9 is a schematic diagram of the adjustment device of the surface-acting device of the work piece of the present invention; Figures 10A-12 are the belt type work pieces Schematic diagrams of surface acting devices; Figures 13A-13C are schematic diagrams of another belt support device; and Figures 14A-14B are schematic diagrams of surface acting devices of most work pieces. [Representative symbol table of main components of the drawing] 100 ... ECMPR system 104 ··· hole 10 6… wafer

102 ... WSID 593787

发明 .. Description of the invention A 108.... Support plate 110 ... perforation 111 ... wafer carrier 112 ... front surface 5 113 ... top surface 114 ... electrolyte 116 ... electrode 120 top layer 122 middle Layer 10 124 ... Bottom layer 200 ... Base material 202 ... Patterned layer; Insulation layer 204 ... Workpiece 206 ... First recess L 15 208 ... Second recess 209 ... Second pass Hole 210 ... field area; top surface 217 ... barrier or glue layer 218 ... film 20 220 ... plane copper layer 300 ... ECMPR system 301 ... belt WSID assembly 302 ... carrier head 303 ... .Belt type WSID 304 ... upper surface 306 ... back surface 307 ... top surface 308 ... roller 309 ... plate 310A5310B, 314 ... hole 311 ... supply reel 312 ... storage reel 316 ... electro-etching Solution 317 ... electrode 318 ... front surface 3 2 0 ... wafer 321 ... processing area 322 ... upper layer; compressible layer 324 ... lower layer 330 ... belt WSID 332 ... channel 334 ... processing area 336 ... belt WSID 338 ... processing area; channel 340 ... belt WSID 342A-342D ... processing area 27 593787 发明, invention description: heart. ≫,-· "" V Π- V // V , V 344, .. channel 4 3 4… roller system 3 5 0. .. contact 436 ... roller 352 ... peripheral area 438 ... frame 360 ... adjustment device 440 ... belt WSID 5 362 ... brush 442 ... ECMPR system 400 ... belt WSID 444 ... channel 402 ... ECMPR system ... 446 ... processing solution 404 ... top layer 448 ... electrode 406 ... bottom layer 450 ... front surface 10 408 ... channel 4 5 2. ..Wafer 410 ... front surface 451 ... top 412 ... wafer 452 ... sphere 414 ... plate 454 ... floatable layer 416 ... channel 500 ... WSID 15 420 ... belt type WSID 502 ... protruding surface 422 " .ECMPR system 504 ... top surface 424 ... channel 600 ... WSID system 426 ... processing solution 602 ... first band WSID 428 ... electrode 604 ... Two-belt WSID 20 430 ... Front surface 4 3 2 ... Wafer 606 ... Wafer 28

Claims (1)

593787 The surface device includes: an electrode in contact with the solution; The section is arranged close to the surface of the work piece, the surface of the work piece acting on the surface of the device, wherein the solution flows through most of the holes in the section of the work piece surface acting device and to the surface of the work piece. And a voltage difference is maintained between the electrode and the work piece; and a mechanism for linearly moving a section of the work piece surface acting device when the solution flows through it. 2. If the scope of patent application is the first! The device described in the item, wherein the surface acting device of the work piece is formed into a belt. 3. The device according to item 2 of the scope of patent application, wherein the holes are through 4. The device according to item 2 of the scope of patent application, wherein the surface-acting device of the work piece includes a top and bottom surface. "Layer" wherein the top surface faces the surface of the work piece. 5. The device according to item 4 of the scope of patent application ', wherein the top surface of the flexible layer contains abrasive particles. 6. The device according to item 4 of the scope of patent application, further comprising a support structure for supporting the surface-acting device of the work piece. 7. The device according to item 6 of the scope of patent application, wherein the surface-acting device of the work piece includes a compressible layer which is placed below the bottom surface of the flexible layer and applies for a patent scope Γ :: shrink layer. 8. The device according to item 4 of the scope of patent application, wherein the work piece surface acting device is arranged to contact a substantially planar conductive surface of the work piece at least during some electrochemical mechanical treatment. 9. The device according to item 6 of the patent application scope, wherein the support structure is a support layer. 10. The device described in item 8, item 8 of the scope of patent application, further includes a support device for supporting the surface-acting device of the work piece. 11. The device according to item 10 of the scope of the patent application, wherein the supporting device is a solution pressure applied under the surface acting device of the work piece. 12. The device according to item 7 of the scope of patent application, wherein the compressible layer is connected to the bottom of the flexible layer so that the compressible layer can be moved on the supporting structure. 13. The device according to item 7 of the scope of patent application, wherein the compressible layer is connected to the top surface of the flexible layer so that the flexible layer can move on the compressible layer. 14. Peizhi as described in item 丨 of the patent application scope, wherein the surface acting device of the work piece is moved in a two-way linear manner by the moving mechanism. 15 · The device described in item 丨 of the scope of patent application, wherein the section of the work piece table 20 surface acting device is moved in a one-way straight line by the moving mechanism. 0 16 · As described in item i of the scope of patent application Device, wherein when processing, most sections of the work piece surface acting device are advanced by the moving mechanism between most processing intervals to make the work piece surface acting device another 30 ..... Ύ ..... .............: " ··. · ............ Applying for a patent application 圔 ',-· ... 一 -....... . · ,. —; '. · Λ'; ^: '—The section is near the surface of the work piece. i7. The device according to item 16 of the patent application, wherein the section has the same channel pattern as the other section. 5 18. The device according to item 16 of the scope of patent application, wherein the section has a different channel pattern from another section. 19. The device as described in item 17 of the scope of patent application, wherein most of the first work pieces are processed on the section within the first processing time and γ then most of the second work pieces are processed on the other within the second processing time. Segments are processed. 20. The device described in item i 8 of the scope of patent application, wherein most of the first work pieces are processed on the section within a first processing time and then most of the second work pieces are processed on the section within a second processing time. Processed on another segment. 15 20 21 · As described in the patent claim 帛 2, the device of which the surface acting device of the work piece is wiped continuously by the moving mechanism during processing makes one of the work piece surface unused Partly on the surface of the work piece, where the part is smaller than the section. & The device according to item 2 of the scope of the patent application, wherein the supply structure is a supply reel to store a work piece surface acting section and the receiving structure is a receiving reel to store a used section of the device. I set the unused area 1 as the surface effect of the device where it is applied which is applied the device 23. The device described in item 1 of the scope of patent application. The voltage difference is used to perform electrical bonding. 24 · The device described in item 1 of the scope of patent application 31 593787 v.:; *: ··-:,; ...: ......... .............. 、 Scope of patent application ............ > ....... · :: -.-- r; =:. Λ '·: · ν. .., · .--...... two ... W ..V..; For electropolishing. 25 · —A device for electrochemically mechanically treating the surface of a work piece by using a first solution and a second solution, comprising: an electrode contacting the solution; 5 a surface acting device of the first work piece, extending in a A first supply structure and a first receiving structure are connected to it; a second work piece table is used as a 'swing device', which extends between a second supply structure and a second receiving structure and is connected to it; A first mechanism for moving the first section of the first work piece surface acting device; the first section of the device; and the first and i-th solutions for flowing through the firsts, respectively! The mechanism of the first stage of the surface acting device of the second work piece, 15 20 wherein the surface of the work piece is thundered on the first and second work surface acting devices. And the first and second baths respectively flow through the first section of the surface-acting devices of the work pieces and onto the surface of the work piece, and a voltage can be maintained between the electrode and the work piece. difference. 26. If the application for the scope of the patent No. 25 device, where the mechanism for flow is to make the first and second solvent m 27 different. 27. Such as the y ^ of the material in the 25th 肀The mechanism is known to flow the same first and second solutions. 28. —A method for electrochemical mechanical treatment—the surface of a workpiece, the 32 593787 The method comprises the following steps: providing a work piece surface acting device extending between and connected to a supply structure and a receiving structure; placing the surface of the work piece next to a work piece surface acting device having a channel pattern First processing section; passing a solution through a channel of the first processing section of the surface-acting device of the work piece and onto the surface of the work piece; when applied between an electrode contacting the solution and the work piece When a voltage difference occurs, the surface of the work piece is electrochemically mechanically processed; and the first processing section of the surface acting device of the work piece moves linearly above the surface of the work piece during the electrochemical mechanical processing. The method of 28, wherein a moving mechanism makes the 32 · If the scope of patent application is No. 31 29 · If the scope of patent application is No. 28 The surface-acting device of the work piece is referred to as v τ 31, a method in which the first and second processing areas are labeled + 2¾ — The method of V 7 π f π quarter 弟 figure J j term processing section has different channel patterns. 34. As the method of the 31st member of the scope of patent application, it further includes processing in the first processing area ρ processing &slave; most of the first work within a second processing time within a second processing time . Most of the treatments in the -treatment section 35. As in the method of claim 34 in the scope of the patent application, the treatment performed in this -treatment section is electrochemical mechanical deposition. 36. The method of claim 35, wherein the treatment performed on the second treatment section is electrochemical mechanical polishing. 10 15 37. If the method according to item 34 of the patent application is applied, the treatment performed on the first and the -treatment sections is electrochemical mechanical deposition. 38. The method of claim 34, wherein the treatment performed on the second and second treatment sections is electrochemical mechanical polishing. 39. If the method of applying for item 33 of the patent scope is further included in the first processing section, most of the first work pieces are processed on the first processing section, and the receiver is in the second processing area within a second processing time Most second work pieces are processed on the segment. 40. The method of claim 39 in the scope of patent application, wherein the treatment performed on the -treatment section is electrochemical mechanical deposition. The method of claim 39 of the patent claims that the treatment performed on the second treatment section is electrochemical mechanical polishing. 2042. The method according to item 29 of the scope of patent application, further comprising moving the work piece surface acting device through the moving mechanism during the processing so that an unused part of the work piece surface acting close to the The surface of the work piece. 43. The method according to item 28 of the scope of patent application, wherein the electrochemical mechanical department 34 593787 · ?: νν " Υ " · ^ :: ^-· ϊ ^ ··; · ννν:. ^, ',. Electrochemical mechanical deposition. The method as claimed in claim 28, wherein the electrochemical mechanical treatment is electrochemical mechanical polishing. 45.-A kind of integrated circuit, which is made by a method including the steps of item 28 of the scope of patent application. ^ 46 ·-A belt-type work piece surface-acting device, which is used in-an electrochemical mechanical processing system with a treatment solution to operate on the surface of a work piece, including: a belt, which is movable, And the belt has-top and bottom-where the belt contains most processing sections; and where each processing section includes most of the holes formed through the belt, so when the section moves and is in the zone of the belt When there is physical contact between the segment and the top surface of the work piece, the treatment solution can flow through it and can be placed on the top surface of the work piece. 15 47. The surface acting device of the belt type work piece according to item 46 of the patent application scope, in which the holes are channels. The surface acting device of the belt type work piece such as the 47th scope of the patent application of the machine, wherein the channels are distributed in a predetermined pattern. 20 pieces of belt-applied surface-acting devices, such as the 46th in the scope of patent application, wherein each processing section has the same channel pattern. 50. The belt-type work piece surface-acting device according to item 46 of the patent application scope, wherein each processing section has a different channel pattern. 51 · If the belt-type female ▼ -type work piece surface acting device of the 49th scope of the patent application, these processing sections are formed as 扃, and there is no gap between the daggers 35. The scope of the patent application 52 . For example, the surface of the belt-type work piece in the scope of patent application No. 49 is such that the processing sections are separated from each other. & M. If you ask for a full-featured belt-type work piece surface acting device of item 5G, the processing section system M is not between them. From the belt-type work piece of item 50 in the scope of patent application Surface action in which the processing sections are separated from each other. 10 55 · —A method for electrochemically treating the surface of most work pieces by using a solution, the method includes the following steps: providing a work piece surface acting device that extends between the supply structure and the receiving structure and is connected thereto ; 15 Place the surface of the work piece in close proximity-with a channel pattern: the first processing section of the surface acting device of the work piece; when each of the electrodes in contact with the solution and the first majority of these work members When an electrical difference is applied between the work pieces and the work piece ^ surface-acting device is used in the-processing section, the surface of the work pieces that are used to prepare a work piece is electrochemically processed; 20 devices, which move the work piece surface A working device, so that a second processing section of the work piece surface acting device can be used; and when a voltage difference is applied between the electrode in contact with the solution and each work piece of the second majority of the work pieces, and Using the second processing section of the work piece surface-acting device, the surface of the work piece of the two work pieces is electrochemically and mechanically processed. 36. Applying for the patent if 圔 /.',:.Γ 56. For the method of applying for item 55, wherein the first and second processing sections have the same channel pattern. 57. The method of claim 56 in which the treatment performed on the treatment section is electrochemical mechanical deposition. 58. The method of claim 57 in the patent application range, wherein the treatment performed on the second processing section is electrochemical mechanical polishing. 59. The method of claim 55, wherein the first and second processing sections have different channel patterns. 106. The method of claim 59, wherein the treatment performed on the -treatment section is electrochemical mechanical deposition. = The method of claiming patent No. 60, wherein the treatment performed on the second treatment section is electrochemical mechanical polishing. A. If you apply for the method of «55, in which the treatment performed on the first and 15th 63 ΓΓ sections of the scale is electrochemical mechanical extinction. For example, apply for the 55th slave method of full-time application, in which the material is processed on the first and first processing sections. A kind of integrated circuit is deposited by electrochemical mechanical deposition. Su Xishi Created by the method of applying the steps in the scope of patent application No. 55. 37