KR20040064699A - Electrochemical mechanical processing with advancible sweeper - Google Patents

Abstract

The present invention provides an apparatus for electrochemical mechanical treatment of the surface of a workpiece by utilizing a treatment solution. The apparatus according to the invention comprises a belt workpiece surface affecting device extending between an electrode in contact with the treatment solution, a supply spool and a receiving spool. In processing, the workpiece surface is placed near the workpiece surface affecting device and the treatment solution flows through the treatment section onto the surface, while a potential difference is applied between the electrode and the workpiece surface.

Description

ELECTROCHEMICAL MECHANICAL PROCESSING WITH ADVANCIBLE SWEEPER}

Conventional semiconductor devices, such as integrated circuits (ICs), generally comprise a semiconductor substrate, typically a silicon substrate, and a plurality of conductive material layers separated by an insulating material layer. The conductive material layer or interconnect forms the wiring network of the integrated circuit. Each level of conductor in the wiring network is insulated from neighboring conductors by an insulating layer, also known as an interlayer dielectric. One dielectric material commonly used in silicon integrated circuits is silicon dioxide, but at least some standard dense silicon dioxide materials in the IC structure are organic, inorganic, and spin-on. There is a tendency to be replaced by low-k dielectric materials such as spin-on and CVD candidates. Conventionally, IC interconnects are formed by filling a conductor, such as copper, in a feature or cavity etched into an interlayer dielectric by a metallization process. Copper has become a preferred conductor for interconnect applications because of its low electrical resistance and good electromigration properties. The preferred method of the copper metallization process is electroplating. Within an integrated circuit, multiple levels of interconnect network extend laterally with respect to the substrate surface. The interconnects formed in the sequential layers are electrically connected using features such as vias or contacts. In a typical interconnect manufacturing process; An insulating layer is first formed on a semiconductor substrate, and then patterning and etching processes are performed to form features or cavities such as trenches, vias, and pads in the insulating layer. Then, copper is electroplated to fill all of the above features. In this electroplating process, the wafer is placed on a wafer carrier and a cathode voltage relative to the electrode is applied to the wafer surface while an electrolytic solution wets both the electrode and the wafer surface.

Once plating is complete, chemical mechanical polishing is performed to remove an excess copper layer, also referred to as overburden copper, from the top surface of the workpiece (also referred to as the field region). A material removal step, such as a process step, is performed to leave only copper in the feature. An additional material removal step is then employed to remove other conductive layers, such as barrier / glue layers on the field region. This method of production results in copper deposits in features that are electrically as well as physically insulated from one another. Other conventional etching techniques can also be used, and there are conventional approaches that can remove both copper and barrier / adhesive layers from the field region in one step. Certain types of CMP devices that work efficiently are described in US Pat. No. 6,103,628, entitled "Reverse Linear Polisher with Loadable housing."

The adverse effects of conventional material removal techniques are minimized or overcome by employing a planar deposition approach with the ability to provide thin layers of planar conductive material on the workpiece surface as well as a planar removal process. Can be. These planar deposition and removal processes also have applications in thru-resist processes employed in IC packaging. In such applications, plating is performed into open holes on the seed flim exposed on the bottom of each hole or opening in the resist layers.

One technique is collectively referred to as Electrochemical Mechanical Processing (ECMPR), which is used to encompass both electroplating (ECME) as well as electrochemical mechanical deposition (ECMD). Also called mechanical polishing. It should be noted that in general, both ECMD and ECME processes are referred to as electrochemical mechanical processes (ECMPR) because they include both electrochemical processes and mechanical actions.

In one form of ECMPR, a workpiece surface influencing device (WSID), such as a mask, pad or sweeper, is such that the workpiece surface and WSID are in physical contact or close proximity and the relative motion therebetween. It is used during at least part of the existing electrotreatment process. Descriptions of various planar deposition and planar etching methods and apparatus can be found in the following patents and pending applications, all jointly owned by the assignee of the present invention. US Patent No. 6,176992, entitled "Method and Apparatus for Elecrochemical Mechanical Deposition." United States Application No. 09 / 740,701, filed December 18, 2001, entitled "Plating Method and Apparatus that Creates a Differential Between Additive Disposed on a Top Surface and a Cavity Surface of a Workpiece Using an External Influence" And US Application No. 09 / 961,193, filed Sep. 20, entitled “Plating Method and Apparatus for Deposition on Predetermined Portions of a Workpiece”. These methods can deposit metals in a planar manner in and on a cavity section on a workpiece. They also have the ability to create new structures with excess amounts of metal on features, if desired, regardless of their size.

In the ECMD method, the surface of the workpiece is wetted with an electrolyte and becomes cathode with respect to the electrode wetted with the electrolyte. This typically results in deposition of conductive material within the features of the workpiece and a thin film on the top of the workpiece. During ECMD, the wafer surface is pushed against or very close to the surface of the WSID or vice versa when the relative motion between the surface of the workpiece and the WSID results in sweeping of the workpiece surface. This sweeping operation as described in the cited patent application above results in planar deposition.

In the ECME method, the surface of the workpiece is wetted by the electrolyte or etching solution, but the polarity of the applied voltage is reversed, thus making the workpiece surface more anode compared with the electrode. If no voltage difference is applied at all, the etch is a chemical etch and can be performed if the workpiece and the WSID are in physical contact or in close proximity. Chemical etching can be performed using a process solution or an etching solution.

Very thin planar deposition layers can be obtained by first depositing a planar layer using ECME technology on a planar flim in the same electrolyte by first using ECMD technology and then inverting the applied voltage. Alternatively, the ECME step can be performed in separate machines and different etching electrolytes. The thickness of the deposited layer can be reduced in a planar manner. In fact, EMCE technology will continue until all metals in the field region are removed. It should be noted that the WSID may or may not be used in the electroetching or etching process since substantially planar etching may be achieved with or without the WSID.

1A is a schematic illustration of a conventional exemplary ECMPR system 100 used to process wafers. In FIG. 1A, the WSID 102 having openings 104 therein is placed in close proximity to the workpiece or wafer 106 to be processed. WSID 102 is supported by support plate 108 having perforation 110 or openings therein. Wafer 106 is a silicon wafer to be plated with a conductive material, preferably copper or a copper alloy. The wafer 106 is held by the wafer carrier 111 to position the front surface 112 of the wafer relative to the top surface 113 of the WSID 102. The openings 104 are designed to ensure uniform deposition of copper from the electrolytic solution onto the front face 112, or uniform electroetching from the front face 112, as indicated by arrow 114. Perforations 110 may or may not match the design of openings 104. In general, the openings 104 are designed for uniform deposition, and the perforations 110 are adapted to allow the electric field and electrolytic solution to pass through the WSID 102 substantially unimpeded. Thus, the area of perforations per unit area of support plate 108 is equal to or greater than the area of openings per unit area of WSID 102. The top surface 113 of the WSID 102 facing the front surface 112 of the wafer is used as a sweeper and the appropriate electrolyte flows to the front surface 112 for deposition or etching with the WSID 102 itself globally uniform. And establish electric field flow. This ECMPR system 100 also includes an electrode 116 which is immersed in the electrolytic solution 114. The electrolyte 114 is in fluid communication with the electrode 116 and the front face 112 of the wafer 106 through the openings 104 in the WSID 102.

Electrode 116 is typically a copper piece (Cu piece) for copper deposition. It may also be an inert electrode made of Pt coated Ti. Exemplary copper electrolytic solutions include copper sulfate with additives such as accelerators, suppressors, levelers, chlorides, and the like commonly used in the art. solution). In planar deposition techniques such as ECMD, levelers are not necessary because the leveling is done automatically by the process. However, levelers can be added to optimize other process results, such as gap fill. The top surface 113 of the WSID 102 sweeps the front surface 112 of the wafer while an electrical potential is established between the electrode 116 and the front surface 112 of the wafer. For deposition of a planar film such as copper, the front face of the wafer becomes more cathodic (negative) compared to electrode 116, and the electrode becomes an anode. For electroetching in the same ECMPR system, the wafer surface is more anode than the electrode. For chemical etching, chemical etching or etching, no potential is applied between the wafer and the electrode.

As shown in FIG. 1B, the structure of WSID 102 may have a top layer 120, an intermediate layer 122, and a bottom layer 124. The top layer 120 is preferably made of an abrasive material, such as a fixed-abrasive-flim type supplied by 3M, or a polymeric IC-1000 material supplied by Rodel. It may be made of any of the other so-called pad materials used in the CMP process, such as polymeric IC-1000 material. The thickness of top layer 120 may typically be in the range of 0.05 to 2 mm. The intermediate layer 122 is a mounting layer for the top layer 120 and holes are formed in the thickening layer 122 and the bottom layer 124. The intermediate layer 122 is typically made of a hard plastic material, such as polycarbonate, in a thickness ranging from 1 to 3 mm. Bottom layer 124 serves as a compression layer for the entire structure. The bottom layer 124 is made of a polymeric foam material such as polyurethane or polypropylene. Various exemplary WSIDs are described in US Pat. Nos. 6,413,403 and 6,413,388, assigned to the assignee of the present invention. Also, various WSID embodiments are described in US Application Serial No. 09 / 960,236, filed September 20, 2001, entitled "Mask Plate Design". In addition, U.S. Application Serial No. 10/155828, filed May 23, 2002, entitled "Low Force Electrochemical Mechanical Deposition Method and Apparatus," describes a flexible and highly compressible layer attached to a highly compressible layer. A WSID structure is described having a flexible and abrasive top layer. Both applications have been assigned to the assignee of the present invention. The WSID is placed on a porous support plate, which may or may not be an integral part of the WSID. In this particular structure, the electrolyte flows through the openings or open pores in the compressible layer and through the openings in the flexible layer.

However, because of this, the techniques can help to obtain a planar metal deposition layer or a new metal structure in a workpiece or wafer yarn, but a device capable of producing deposition layers with better uniformity and higher yield. And the need for further development of high-throughput approaches still exists.

This application claims priority from US Provisional Application No. 60 / 350,214, filed November 2, 2001, and is now US Patent No. 6,176,992, filed December 1, 1998. United States Serial No. 09 / 607,567 (NT-001D1-US), filed June 29, 2000, which is a division of / 201,929 (NT-001-US), and United States provisional application, filed August 10, 2000. Partial continuation of US Serial No. 09 / 740,701 (NT-020-US), filed December 18, 2000, claiming priority under No. 60 / 224,739 (NT-020-P). in-part).

FIELD OF THE INVENTION The present invention relates generally to semiconductor integrated circuit technology and, more particularly, to a device for electroprocessing or electrochemically processing a workpiece.

1A is a schematic illustration of a conventional ECMPR system;

1B is a schematic illustration of a workpiece surface affecting device;

2A is a schematic illustration of the surface area of a substrate surface having features formed therein;

FIG. 2B is a schematic illustration of the substrate shown in FIG. 2A with copper deposited on the substrate surface; FIG.

3 is a schematic illustration of an ECMPR system employing a belt workpiece surface affecting device;

4A is a schematic illustration of a treatment section of the belt workpiece surface affecting device;

4b schematically illustrates a treatment section of another belt workpiece surface affecting device;

5 is a schematic illustration of a workpiece surface affecting device having treatment sections having the same channel pattern but not apart from each other;

6 is a schematic illustration of a workpiece surface affecting device having treatment sections having the same channel pattern but spaced apart from each other;

7 is a schematic illustration of a workpiece surface affecting device with processing sections having different channel patterns;

8 is a schematic illustration of electrical contact locations within the ECMPR system shown in FIG. 3;

9 is a schematic illustration of a conditioning device of the belt workpiece surface affecting device of the present invention;

10A-12 are schematic illustrations of belt workpiece surface effect device systems;

13a-13c schematically show an alternative belt support means; And

14A and 14B schematically illustrate a multiple workpiece surface effect device system.

The present invention provides an apparatus for electrochemical mechanical treatment of the surface of a workpiece by utilizing a treatment solution. The apparatus according to the invention comprises an electrode in contact with the treatment solution and a belt workpiece surface influence device (belt WSID) extending between and attached to the supply structure and the receiving structure. do. In addition, the process section of the workpiece surface affecting device is disposed proximate to the surface of the workpiece. The treatment solution may flow through the treatment section and onto the surface of the workpiece. A potential difference can be maintained between the surface of the workpiece and the electrode during the treatment. An instrument moves the treatment section of the workpiece surface affecting device while the solution flows through the workpiece surface affecting device.

The invention also provides a method for the electrochemical mechanical treatment of the surface of a workpiece. The method includes providing a workpiece surface affecting device having a channel pattern. The workpiece surface affecting device extends between and is attached to a supply spool and a receiving spool. The workpiece lies in close proximity to the first treatment section of the workpiece surface affecting device. The treatment solution flows through the first treatment section of the workpiece surface affecting device and onto the workpiece surface. The surface is subjected to an electrochemical mechanical treatment, while the relative motion between the first treatment section of the workpiece surface affecting device and the workpiece surface is established during the electrochemical mechanical treatment. During the treatment, a potential difference is maintained between the electrode and the workpiece surface.

It is an object of the present invention to provide a belt WSID design that helps to provide better uniformity for the metal layer.

It is another object of the present invention to provide a belt WSID design having openings and channels grouped into multiple sections of the belt WSID.

The present invention achieves the above and other objects of the present invention alone or in combination using a belt WSID in an electrochemical mechanical processing apparatus.

Hereinafter, preferred embodiments will be described using examples of manufacturing interconnects in integrated circuit applications. However, the present invention is suitable for Au, Ag, Ni, Pt, Pd, Fe, Sn, Cr, Pb, Zn, Co and their mutual alloys or the like in many different applications such as packaging, flat panel displays, magnetic heads, etc. It should be appreciated that various electroplating materials, such as alloys with materials, can be used for work on certain workpieces. In the examples provided below, copper is described as an example of the material to be electroplated, but it can be appreciated that other materials may be used instead.

The preferred embodiment also describes the deposition of planar layers. As described in the ECMPR patents and applications described above, other novel structures that may require electroetching, chemical etching and other processes may be obtained using the present invention. In one embodiment, a planar conductive layer is formed on the wafer surface by, for example, an ECMD process using the belt WSID structure of the present invention. Other structures may also be formed using the low-force electrochemical mechanical etching (ECME) described in the previous application.

Details of the surface area of an exemplary substrate 200 for processing in accordance with the present invention are shown in FIGS. 2A-2B. The substrate 200 includes an insulating layer formed on the patterned layer 202, preferably the workpiece 204. The insulating layer is made of an insulating material such as silicon oxide, and is formed using known patterning and etching techniques in accordance with metal interconnect design rules. In this embodiment, the insulating layer 202 may be formed of a first cavity 206 and a second cavity 208 spaced apart from each other by a cavity or a gap, that is, the field region 210. In this embodiment, the cavities may be formed such that the first cavity 206 is a via and the second cavity 208 is a trench that includes a second via 209 at the bottom. Top surface 210 is called a field region. For example, an adhesive layer 217 or one or more thin barrier layers having a material such as Ta, TaN, Ti, TiN or WN coats the cavity as well as the top surface. A thin film of copper 218 is coated as a seed layer on top of the barrier layer for subsequent electroplated copper layers. The copper seed layer provides a base layer thereon which can promote nucleation and growth of subsequent deposition layers. Referring to FIG. 2B, in accordance with the present invention, a planar copper layer 220 may be deposited in the cavity 206, 208, 209 and deposited on the field region 210. The deposition process as well as other processes performed using the present invention are described below.

3 shows an embodiment of an ECMPR system 300 that includes a belt WSID assembly 301 and a carrier head 304 of the present invention. The belt WSID assembly 301 includes a WSID belt 303 and a set of rollers 308 having an upper surface 304, that is, a processing surface and a back surface 306. The WSID belt may be made of a flexible material and may preferably have an abrasive process surface for the sweeping operation. The belt WSID may have a plurality of openings 314, i.e., a treatment solution, such as a plating electrolyte or an electroetching solution, indicated by arrow 316, is used for the electrode 317 and the workpiece 320, i.e., the front surface of the wafer ( 318 may be provided to allow a channel to flow between. For clarity of explanation, the container containing the treatment solution, ie the cavity, is not shown in the figure. The front surface 318 of the wafer may include the example substrate shown in FIGS. 2A-2B. As described below, the processing surface of the belt 303 may also include a convex surface for performing a sweeping operation (see FIG. 4B). The belt WSID 303 moves on the roller 308 in a uni-directional or bi-directional linear manner by a moving mechanism (not shown). The belt WSID may be moved closer to the front face of the wafer during an electroetching or electrodeposition process. The belt WSID can move on the front side of the wafer to sweep the front side during electroetching or electroplating. The moving mechanism may also properly tension the belt WSID 303 to ensure contact with the workpiece surface during ECMPR. The back surface 306 of the belt WSID 303 is located on the top surface 307 of the plate 309. The plate 309 may be made of one or more layers. In this embodiment, the plate 309 consists of an upper layer 322 and a lower layer or bottom layer 324. The top layer 322 may be made of a compressible material. The bottom layer 324 is made of a rigid material as a support layer to support the compressive layer. The opening 310A of the compressible layer and the opening 310B of the rigid layer allow the processing solution to flow through the plate 303. In addition, the compressive layer 322 may have an opening 310, or may be made of a porous material that allows the processing solution to flow through its open pore. The belt WSID extends on the top surface of the plate such that the top surface 307 of the plate 309 is in full contact with the bottom portion of the belt WSID covering the top surface 307. If necessary, as the belt WSID moves on the top layer, the bottom surface of the belt WSID slides on the top surface of the plate, while the treatment solution 316 flows through both the plate and the belt WSID 303.

The belt WSID may be made of a polymer film such as a fixed abrasive film commonly used in a CMP process and commercially available from 3M. The flexible material of the belt WSID is thin and its thickness is in the range of 0.2-2 mm. The belt WSID may also have a composite structure with multiple thin layers. The belt WSID may have a relatively flat surface, such as a lapping film containing abrasive particles of 0.05 to 0.5 microns in size (e.g., commercially available from Buehler or 3M), i.e. It may have a small diameter post, ie pyramidal post, with a flat top as employed in. The surface of the belt WSID is preferably abrasive in order to effectively sweep the surface of the workpiece.

The top layer of the plate is made of a foam or gel material that is easily compressible by the force applied, but which is restored to its original shape when the force is dissipated. The thickness of the top layer of the plate may be in the range of 1 to 5 mm. Examples of such materials include polyurethane, polypropylene, rubber, EVA and mixtures thereof. The lower layer of the plate is a porous plate with several openings allowing the electrolyte and the electric field to flow freely towards the substrate surface. The lower layer 100c itself may be an electrode.

During the process, the wafer 320 is held close to the belt WSID by the carrier head, so that the processing solution flowing through the belt WSID 303 and the plate 309 wets the front surface of the wafer. As shown in the exploded view of FIG. 4A, the wafer 320 is processed over a predetermined area 321, ie, the process area of the processing surface of the belt WSID 303. As the belt extends over the top surface 307 of the plate, the compressive layer pushes the belt upwards. Additionally, if wafer 320 is in contact with the processing surface, the compressive layer pushes the wafer against the front surface of the wafer. The processing area 321 is refreshed again by advancing the belt WSID so that the used processing area is relocated by a new processing area by rolling the used processing area across the storage spool 312, thereby creating a new process area. The processing area is pulled from the supply spool. Advancement of the belt can be performed after processing approximately 20-100 wafers or before widespread use of the same area of the WSID begins to affect processes that result in a negative approach. Thanks to this feature, the belt WSID 303 reduces manufacturing downtime and improves system throughput. Alternatively, it is also possible to index or progressively advance the WSID in small amounts, for example in the range of 1 to 5 mm for each wafer processed. In the process, the wafer carrier 304 may move the wafer laterally on or above the belt WSID 303 and may rotate about the rotational axis z of the wafer carrier. As mentioned above, the belt WSID of the present invention may also move transversely, while the wafer is moved thereon by a carrier head. In yet another embodiment, the belt may be in the form of a loop, ie a continuous belt, rotated by rollers replacing the storage and supply spools. Belts are disposed and stretched around the rollers. The rollers in this embodiment are rotated by a drive system, and the rotational movement of the rollers causes the belt to move linearly with respect to the wafer surface being processed.

Also as shown in FIG. 4A, the width of the belt WSID is preferably shorter than the diameter of the wafer to be processed. As described below, this feature of the belt allows electrical contact to be made between the front face of the wafer and the power source (not shown). In the chemical etching process, the width of the WSID may be equal to or larger than the diameter of the wafer, since there is no need to make an electrical contact. The belt WSID may be a single layer or a composite layer of more than one layer. If the belt comprises more than one layer, the layers may or may not be the same size. However, the overall thickness of the composite layer is typically 0.5-2 mm. As seen in the perspective view of FIG. 4B, the WSID 500 may have a smaller convex surface 502 as compared to the top surface 504 of the WSID 500. In this embodiment, the sweeping function is performed by the convex surface 502. The convex surface 502 preferably includes an abrasive layer.

The example ECMPR system 300 of FIG. 3 may perform planar or nonplanar electroetching as well as planar or nonplanar plating. In this regard, if a non-planar processing method is selected, the front surface of the wafer comes close to the processing surface of the belt WSID 303, but does not touch it, so non-planar metal deposition can be performed. Also, if a planar treatment method is selected, the front face of the wafer is brought into contact with the process face as relative motion is made between the belt WSID and the front face of the wafer. When the treatment solution is passed through the opening of the belt, the belt moves in the transverse direction or the wafer is rotated and in the transverse direction, or both the belt WSID and the wafer are moved, while the front face is the processing It comes into contact with the face. If there is a processing solution rising through the belt WSID 303 under a potential applied between the wafer and the electrode, a metal, such as copper, may be applied to the wafer, depending on the polarity of the voltage applied between the wafer surface and the electrode. Plated or etched from the front face.

5-7 show various belt WSID processing area designs. According to the principles of the present invention, the belt WSID may have a variety of grouped openings, i.e., a channel pattern adapted as a continuous pattern generally along the belt WSID or more than one pattern repeated along the belt WSID. As shown in FIG. 5, in one embodiment, the WSID belt 330 may have channels 332 formed in a continuous pattern extending along the belt WSID 330. In this particular design, the channel 332 is in parallel slit shape, but may also be in the shape of various geometries or holes or other openings of various radial designs. In this embodiment, a plurality of processing regions 334 may be extended end to end fashion, depending on process requirements and wafer size. The belt WSID 330 can move transversely on the plate for mechanical sweeping operations. After a predetermined number of wafer processes in the same processing area, the belt WSID is advanced to obtain a new processing area. Alternatively, the belt may move incrementally in a particular direction during processing. In this way, the new incremental belt WSID portion is moved into the processing area in a continuous manner.

As shown in another embodiment of FIG. 6, the belt WSID 336 may have channels 338 grouped in the processing region 338 spaced apart from each other. After each use, the treatment areas are advanced to be replaced with new areas. According to the belt, the transverse motion is provided by the wafer holder mainly during the process.

As shown in Figures 5 and 6, the belt WSID may have a single channel pattern extending along the belt WSID, but the belt WSID may also include a plurality of openings, or channel patterns. As illustrated in FIG. 7, belt WSID 340 has several processing areas 342A-342D that include channels 344 having different sizes and shapes as well as convex surfaces on the processing area for sweeping operations. You can also have For example, treatment region 342A includes a channel 344 that is round hole shaped, while treatment region 342B includes a channel 344 that is slit-shaped. Treatment region 342C includes a channel 344 having a radial pattern, and treatment region 342D includes a channel 344 formed with rectangular holes. Channels 344 of the respective treatment regions 342A to 342D may be different in size and shape, and may be distributed in a specific treatment region. Each treatment zone can be used repeatedly for ECMD or ECME or chemical etching treatments by advancing or rewinding the belt WSID for a particular treatment zone. Given a particular shape and distribution for the channel, the copper layer profile can be controlled. By adopting a specific treatment area, the thickness profile of the copper layer may be uniform or may be changed to a desired profile. For example, in an exemplary working sequence, the wafer may first be ECMD processed on processing region 342A to deposit a planar copper layer. Subsequently, the same wafer may be ECME treated or chemical mechanically etched to etch the planar copper layer on the treatment region 342B again. In this example, the treatment region 342A may have a channel pattern suitable for ECMD processing that provides uniform deposition, and the treatment region 342B may be used for ECME or CME or chemical etching treatments that provide uniform material etching or removal. It may have a suitable pattern.

In the ECMPR, a potential is generated between the front surface of the wafer and the electrode 317. As shown in the side view of the system 300 of FIG. 8, the front face of the wafer 320 contacts the sliding contact 350 on the peripheral area 352 of the front face 318 of the wafer. Is connected to a power source (not shown). Examples of such contacts are described in US application Ser. No. 09 / 760,757, filed Jan. 17, 2001 and entitled "Method and System for Providing," entitled "Method and Apparatus for Electrodeposition of Uniform Film with Minimal Edge Exclusion on Substrate." Electrical Contacts for Electrotreating Processes, disclosed in US Provisional Application No. 60 / 348,758, filed Oct. 26, 2001, both of which are owned by the assignee of the present invention.

In the processing step, the WSID is in close proximity and is typically in contact with the front face of the wafer, small particles of metal on the front face, or non-conductive particles from a source capable of adhering on the WSID material. These particles may be present due to the fact that they can only be physically removed from the substrate surface or can be generated from the plating solution due to poor filtration of the plating solution. Such particles can be cleaned using the conditioning apparatus of the present invention. As shown in FIG. 9, the carrier head 302 may include a conditioning device 360 with a brush 362. As illustrated, the brush 362 is disposed around the periphery of the carrier head 302. The brush 362 provides conditioning of the WSID 303 by mechanically sweeping them to dislodge the particles. In this embodiment, ECMPR processing (ECMD or ECME) on the workpiece 320, and conditioning of the WSID 303 may occur simultaneously in the processing. In this particular situation, in order to condition the entire WSID 303, the transverse movement of the carrier head 302 or WSID 303 is preferably greater than or equal to the radius of the carrier head 302, thus covering the carrier head. The WSID part must be cleaned effectively. Alternatively, conditioning brushes are not attached to the head, but are disposed out of the end of the area scanned by the transverse movement of the head using appropriate means. The belt can then be moved to ensure that the entire length of the treatment area is brushed by the conditioning brush.

10A-12 show various embodiments of the belt WSID. 10A shows belt WSID 400 in ECMPR system 402. As shown in detail in FIG. 10B, the belt WSID 400 is comprised of two layers by a top layer 404 and a bottom layer 406 attached to the top layer. The top layer 404 may be an abrasive layer or a layer containing an abrasive. The bottom layer 406 is a thin compressible layer. Channel 408 is formed through belt 400 to allow processing solution 407 to flow between electrode 408 and front surface 410 of wafer 412. Referring to FIG. 10A, in use, the compressible layer of the belt 402 is disposed on a plate 414 of the system 402. The plate in this embodiment is preferably made of a hard material. The plate includes a channel 416 that allows the treatment solution to flow through the plate. In processing, the compressible layer of the belt supported by the rigid plate of the system pushes the belt towards the wafer. In the above embodiment, unlike the previous embodiment, the compressive layer is an integral part of the belt WSID. The surface interface between the compressive layer and the plate 414 is preferably a low friction interface in the above examples and the previous examples. In the belt of the embodiment described above, the top layer is typically 0.2-2 mm thick and the bottom layer is typically 1-5 mm thick, with the layers bonded together and having channels dimensioned to allow fluid to flow therethrough.

11A shows belt WSID 420 in ECMPR system 422. As shown in detail in FIG. 11B, the belt WSID 420 may be an abrasive layer or a layer containing an abrasive. Channel 424 is formed through belt 420 to allow processing solution 426 to flow between electrode 428 and front surface 430 of wafer 432. Referring to FIG. 11A, in use, the belt 302 is disposed on a roller system 434 having a plurality of rollers 436 disposed on the frame 438. The frame is immersed in the processing solution and passes the processing solution through the roller system. The rollers are arranged side by side along the width of the belt and can move up and down when the wafer contacts the belt during processing. In processing, the roller system pushes the belt against the wafer and acts like the compressive layer shown in the previous embodiment. The roller surface may preferably comprise a compressible material to make a contact between the wafer surface and the belt surface.

12 shows belt WSID 440 in ECMPR system 442. The belt WSID 440 consists of a single layer, which may be an abrasive layer or a layer containing abrasives. Channel 444 is formed through the belt 440 to allow the processing solution 446 to flow between the electrode 428 and the front surface 430 of the wafer 432. The treatment solution is held in a container (not shown). The belt is supported on the upper end 450 of the side wall of the container during processing. In addition, the hydraulic pressure of the processing solution pushes the belt against the wafer while providing additional support. The pressure of the solution acts like the compressible layer shown in the previous embodiment.

13A-13C illustrate various additional mechanisms for supporting the belt 440 shown in the embodiment described with reference to FIG. 12. As shown in FIG. 13A, the belt WSID 440 also floats on the processing solution 446 while trapped by the wall top 450 of the processing container and is located under the belt 440. May be supported by 452. The spheres can be filled with a gas such as air or a lighter gas. In addition to the pressure of the solution, sphere 452 adds additional compressive support to the belt.

In FIG. 13B, the above results can be obtained using a floatable layer 454 disposed under the belt 440 with a channel 456 through which the treatment solution 446 is passed. The floatable layer 454 may be made of a sponge, such as a polyurethane material. The floatable layer may also have an air pocket (not shown) therein. Also, as illustrated in FIG. 13C, both the floatable layer 454 and the sphere 452 are disposed under the belt 440 for the same purpose.

14A and 14B show multiple WSID system 600 including a first belt WSID 602 and a second belt WSID 604 located adjacent to the first belt WSID. The system 600 may have more than two WSID belts as needed. The system 600 allows wafer 606 to be processed on two belts 602 and 604 during processing. The belts 602 and 604 may have a repeating channel pattern shown in FIGS. 5 and 6. The belt may also have different channel patterns designed with different thickness distributions. For example, a first step of processing may be performed on the first belt 602 in a manner that provides an edge thick deposit profile using ECMD. The belt 604 can then be used in an ECME step to reduce the overall thickness of the deposition. The pattern of the belt 604 can allow more material to be etched from the edge to provide a uniform thickness profile. If necessary, processing can continue on the first belt or vice versa.

While various embodiments have been described in detail above, it will be apparent to those skilled in the art that various modifications of the example embodiments are possible without departing from the novelty and advantages of the present invention.

Claims (64)

An apparatus for electrochemical mechanical treatment of the surface of a workpiece by utilizing a solution, An electrode in contact with the solution; A workpiece surface affecting device extending between and attached to the supply structure and the receiving structure, wherein a section of the workpiece surface affecting device is disposed proximate to the surface of the workpiece, and the solution is the workpiece surface Flowing through the openings in the section of the influence device and onto the surface of the workpiece, the potential difference being maintained between the electrode and the surface of the workpiece; And And a mechanism for linearly moving said section of said workpiece surface affecting device while said solution flows through it. The method of claim 1, And said workpiece surface affecting device is shaped as a belt. The method of claim 2, And the openings are channels. The method of claim 2, And said workpiece surface affecting device comprises a flexible layer having a top surface and a bottom surface, said top surface facing said surface of said workpiece. The method of claim 4, wherein And the top surface of the flexible layer comprises abrasive particles. The method of claim 4, wherein And a support structure for supporting the workpiece surface affecting device. The method of claim 6, And said workpiece surface affecting device comprises a compressive layer underlying said bottom surface of said flexible layer. The method of claim 4, wherein And said workpiece surface affecting device is arranged to contact a substantially planar conductive front face of said workpiece during at least some electrochemical mechanical treatment. The method of claim 6, And the support structure is a support layer. The method of claim 8, And electromechanical mechanical treatment further comprising support means for supporting said workpiece surface affecting device. The method of claim 10, Said support means being a solution pressure applied under said workpiece surface influence device. The method of claim 7, wherein And the compressive layer is attached to the bottom surface of the flexible layer such that the compressive layer can be moved on the support structure. The method of claim 7, wherein And said compressive layer is attached to the top surface of said support structure such that said flexible layer can be moved on said compressive layer. The method of claim 1, And said section of said workpiece surface affecting device is moved in a bidirectional linear manner by said moving mechanism. The method of claim 1, And said section of said workpiece surface affecting device is moved in a unidirectional linear manner by said moving mechanism. The method of claim 1, When processing a plurality of workpieces, the section of the workpiece surface affecting device is advanced between the process intervals by the moving mechanism to bring another section of the workpiece surface affecting device to the surface of the workpiece. Electrochemical mechanical processing apparatus, characterized in that bringing close. The method of claim 16, Wherein said section and said other section have the same channel pattern. The method of claim 16, Wherein said section and said other section have different channel patterns. The method of claim 17, And a first plurality of workpieces are processed on said section during a first treatment interval, and subsequently a second plurality of workpieces are processed on said other section during a second treatment interval. The method of claim 18, And a first plurality of workpieces are processed on said section during a first treatment interval, and subsequently a second plurality of workpieces are processed on said other section during a second treatment interval. The method of claim 2, The section of the workpiece surface affecting device is continuously advanced by the moving mechanism during the processing to bring an unused portion of the workpiece surface affecting device close to the surface of the workpiece. Chemical mechanical processing equipment. The method of claim 2, The feed structure is a supply spool for storing unused sections of the workpiece surface affecting device, and the receiving structure is a receiving spool for storing used sections of the workpiece surface affecting device. Processing unit. The method of claim 1, Wherein said applied potential difference is provided for electroplating. The method of claim 1, The applied potential difference is provided for electropolishing. An apparatus for electrochemical mechanical treatment of a surface of a workpiece by utilizing a first solution and a second solution, An electrode in contact with the solution; A first workpiece surface affecting device extending between and attached to the first supply structure and the first receiving structure; A second workpiece surface affecting device extending between and attached to the second supply structure and the second receiving structure; A first mechanism for moving the first section of the first workpiece surface affecting device; A second mechanism for moving the first section of the second workpiece surface affecting device; And Means for flowing the first and second solutions through the first sections of the first and second workpiece surface affecting devices, respectively, The surface of the workpiece is effected by the first and second workpiece surface influence devices while each of the first and second solutions flow through the first sections of the workpiece surface area devices and onto the surface of the workpiece. Electrochemically mechanically processed on a field, wherein an electrical potential difference can be maintained between the surface of the workpiece and the electrode. The method of claim 25, Wherein said flowing means flows different first and second solutions from each other. The method of claim 25, Wherein said flowing means flows the same first and second solutions. A method for electrochemical mechanical treatment of a surface of a workpiece, Providing a workpiece surface affecting device extending between and attached to the supply structure and the receiving structure; Placing the surface of the workpiece in close proximity to the first treatment section of the workpiece surface affecting device having a channel pattern; Flowing a solution through the channels of the first treatment section of the workpiece surface affecting device and onto the surface of the workpiece; Electrochemically mechanically treating said surface of said workpiece when applying a potential difference between said workpiece and an electrode in contact with said solution; And Linearly moving said first treatment section of said workpiece surface affecting device over said surface of said workpiece during said electrochemical mechanical treatment. The method of claim 28, And a moving mechanism moves the workpiece surface affecting device in a bidirectional linear manner. The method of claim 28, And a moving mechanism moves the workpiece surface affecting device in a unidirectional linear manner. The method of claim 28, Advancing the first treatment section of the workpiece surface affecting device between treatment intervals to bring the second treatment section of the workpiece surface affecting device close to the surface of the workpiece. Mechanical treatment. The method of claim 31, wherein Wherein said first and second treatment sections have the same channel pattern. The method of claim 31, wherein Wherein said first and second treatment sections have different channel patterns. The method of claim 31, wherein Processing the first plurality of workpieces on the first processing section during a first processing interval and subsequently processing the second plurality of workpieces on the second processing section during a second processing interval. An electrochemical mechanical treatment method. The method of claim 34, wherein And wherein said treatment performed on said first treatment section is an electrochemical mechanical deposition. 36. The method of claim 35 wherein And wherein said treatment performed on said second treatment section is electrochemical mechanical polishing. The method of claim 34, wherein And wherein said treatment performed on said first and second treatment sections is an electrochemical mechanical deposition. The method of claim 34, wherein And wherein said treatment performed on said first and second treatment sections is electrochemical mechanical polishing. The method of claim 33, wherein Processing the first plurality of workpieces on the first processing section during a first processing interval and subsequently processing the second plurality of workpieces on the second processing section during a second processing interval. An electrochemical mechanical treatment method. The method of claim 39, Wherein said treatment performed on said first treatment section is an electrochemical mechanical deposition. The method of claim 39, And wherein said treatment performed on said second treatment section is electrochemical mechanical polishing. The method of claim 29, Advancing the workpiece surface affecting device by the moving mechanism during the processing to bring an unused portion of the workpiece surface affecting device close to the surface of the workpiece. Chemical mechanical treatment. The method of claim 28, The electrochemical mechanical treatment is an electrochemical mechanical treatment, characterized in that the electrochemical mechanical deposition. The method of claim 28, The electrochemical mechanical treatment is an electrochemical mechanical treatment, characterized in that the electrochemical mechanical polishing. An integrated circuit manufactured by a method comprising the steps of claim 28. A belt workpiece surface affecting device for use in an electrochemical mechanical treatment system with a treatment solution acting on a top surface of a workpiece, A belt having a top surface and a bottom surface, the belt adapted to move, said belt including a plurality of treatment sections; And Each of the treatment sections includes a plurality of openings formed through the belt such that the treatment solution occurs while movement of the section occurs and while there is a physical contact between the top surface of the workpiece and the section of the belt. A belt workpiece surface affecting device, which can flow therethrough and can be disposed on the top surface of the workpiece. The method of claim 46, And the openings are channels. The method of claim 47, And the channels are distributed in a predetermined pattern. The method of claim 46, A belt workpiece surface affecting device, characterized in that each of the treatment sections has the same channel pattern. The method of claim 46, Each of the processing sections has a different channel pattern. The method of claim 49, And said processing sections are formed without any gap therebetween. The method of claim 49, And the treatment sections are spaced apart from each other. 51. The method of claim 50 wherein And said processing sections are formed without any gap therebetween. 51. The method of claim 50 wherein And the treatment sections are spaced apart from each other. A method for electrochemical mechanical treatment of surfaces of a plurality of workpieces using a solution, Providing a workpiece surface affecting device extending between and attached to the supply structure and the receiving structure; The surface of the first plurality of workpieces when using a first treatment section of the workpiece surface affecting device and applying a potential difference between an electrode in contact with the solution and each of the first plurality of workpieces of the plurality of workpieces Electrochemical mechanical treatment; Moving the workpiece surface affecting device such that a second treatment section of the workpiece surface affecting device can be used; And And applying the potential difference between the electrode in contact with the solution and each of the second plurality of workpieces of the plurality of workpieces using the second treatment section of the workpiece surface affecting device. Electrochemical mechanical treatment of said surface of a workpiece. The method of claim 55, Wherein said first and second treatment sections have the same pattern. The method of claim 56, wherein And wherein said treatment performed on said first treatment section is an electrochemical mechanical deposition. The method of claim 57, And wherein said treatment performed on said second treatment section is electrochemical mechanical polishing. The method of claim 55, Wherein said first and second treatment sections have different patterns. The method of claim 59, And wherein said treatment performed on said first treatment section is an electrochemical mechanical deposition. The method of claim 60, And wherein said treatment performed on said second treatment section is electrochemical mechanical polishing. The method of claim 55, And said treatment performed on said first and second treatment sections is an electrochemical mechanical deposition. The method of claim 55, And wherein said treatment performed on said first and second treatment sections is electrochemical mechanical polishing. An integrated circuit manufactured by a method comprising the steps of claim 55.