TWI220932B - Modular probe head - Google Patents

Abstract

A modular probe head for modularly assembling on a probe card is configured for probing a semiconductor wafer under test. The probe head includes a silicon substrate having a probing surface and a mounting surface. A plurality of electrical vias in grid array are formed between the probing surface and the mounting surface, which have silica layers in the via laterals. The probing surface forms a plurality of contact elements. The mounting surface forms a plurality of connect terminals. The connect terminals are electrically connected to the contact elements by the electrical vias, so that the mounting surface of the probe head enables to be modularly mounted and electrically connected to an interface board of the probe card.

Description

1220932

[Technical field to which the invention belongs] The present invention relates to a probe card, and more particularly to a modular probe head for testing. [Prior technology] The size of the probe card for the body wafer is small and suitable for high-frequency conventional probe cards. The test card is equipped with a semiconductor test equipment [te = head] for probing the semiconductor wafer to be tested. Probe $ 3 has a probe head and a circle with multiple layers. P brushes the circuit board. Because the probe head < probes with cattle [such as • needle ghost = required to probe the semiconductor to be tested or Bump Ϊcard: Ϊ2: The accuracy and thermal expansion coefficient match are much higher than the probe interface; te, 2 yak, such as the printed circuit board material used to combine the door panel with the test head, so the probe head is a probe card Key components. Card "Chinese Patent Bulletin No. 493 756" Wafer universal detection type detection card, which contains-detection ... interface probes, S Ϊ: the detection head is replaceable, has a plurality of rooms for 丨 surface The card is assembled on the printed circuit board and the connection of the probe head: protect: assemble the probe head '❻ did not expose the internal material of the probe head: ϊ ΐΐ ΐΐ road design and material of the probe head, the MU of the probe head is known: Λ Xi is a circuit board [mUlti-layer ceramic board, which reads the conductor Hedo I and forms a micro-pitch circuit, and it cannot use the current half-height. It is mainly manufactured to make the manufacturing cost of this multilayer ceramic circuit board very difficult. U.S. Patent No. 6,3,59,4,56, reveals a detection

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The probe of the card includes an interconnecting member with a raised contact substrate. The interconnecting substrate is made of silicon. According to a semiconductor process, the interconnecting substrate of the silicon material is used. The exposed surface forms a conductive line and the protruding contact elements, which are used as the contact surface of the probe head, and the corresponding surface of the interconnect substrate cannot be formed with an electrical connection end. Therefore, the conductive line of the interconnect substrate is formed with The exposed surface of the component is contacted and extends to the periphery of the exposed surface. The bonding wire is used to connect the conductive line of the interconnect substrate to a mounting plate, and then a flexible circuit board or TAB (Tape Automated Bonding) is used. [Automatic bonding] The bow is connected to the multilayer printed circuit board of the bonding board 3 detection card, and the interconnect substrate of the silicon material must be pre-prepared. There are blocks around its exposed surface for bonding wires or flexible boards, = The size of the Shi Xi material interconnect substrate should be larger than the area of the detection chip on the wafer to be tested. When protruding on the exposed surface of the interconnect substrate, and touching the wafer electrode of the wafer under test with the protruding contact elements on the two sides of the display, the wires or flexible boards may also contact and rub against the wafer under test. Test performance. [Summary of the invention] The main purpose of the two inventions is to provide a modular probe head, which has an electric stone through the hole on the wall of the oxidized stone, a through hole, and a stone on the ground. The surface allows a plurality of lead terminals to be provided on the interface: instead of the conventional lead terminals provided around the touch surface of the silicon substrate, which is conventionally used to avoid affecting the touch of the silicon substrate by the opposite sides of the lead terminals. 1220932 V. Description of the invention (3) The contact elements on the surface and the semiconductor wafer to be tested. A second object of the present invention is to provide a modular probe head, which is electrically conductive and has a silicon dioxide hole wall electrically connected to a silicon base == a gripping surface and a bonding surface, so that a plurality of devices are provided. The guide wire on the bonding surface is electrically connected to the dielectric panel of the detection card, instead of the conventional electrical connection: soil, the solder wire to the dielectric panel or the flexible circuit board. The electrical through-holes and terminals are short. The electrical conduction path is suitable for high frequency testing. & f Another purpose of the invention is to provide a modular probe head system that uses laser drilling (or electro-etching), oxidation and electroless plating to produce a plurality of holes with the walls of dioxide holes. Through-holes, which measure the contact surface and the combined surface of 1 μ H to achieve the highest size, test the manufacture of modular probes. Each of the contact probes includes a Shi Xi substrate, a plurality of surfaces, and a plurality of conductive terminals. The broken substrate is provided with a contact surface penetrating through; two 2 and a plurality of electrical through holes. The electrical through-holes and the bonding surfaces are preferably arranged in a matrix. For these materials, a silicon dioxide layer is formed and filled with a conductive material, and some contact elements are provided on the silicon substrate. Early morning :! The through-holes are used to probe the semiconductor crystal under test. The guides # ί ϋ f t cut the bonding surface of the substrate and electrically connect the f-through holes to form a detection card.耵 飔 电 [Embodiment] The attached drawings ‘the present invention will enumerate the following practical modules ^ For specific implementation examples, please refer to FIGS. 1 and 2, a

1220932 V. Description of the invention (4) The chemical probe head includes a stone substrate 10, a plurality of contact elements 4 0, and a plurality of lead terminals 50. The silicon substrate 1 0 has a contact surface. The bonding surface 12 and the plurality of electrical through-holes 13 are connected to the probe surface 11 and the bonding surface 12. Preferably, the electrical through-holes 13 are In a matrix arrangement, the hole walls of the electrical through holes 13 are formed with a dioxide layer 14 and filled with a conductive material 15. The touch surface 11 is used as the exposed front side of the probe head. The metal lines 21 formed by the semiconductor process are covered with a protective layer 6 1 on the metal lines 2 i on the contact surface 1 丨, and only the contact pads 2 2 of the metal lines 2 1 are exposed to join the contact elements. 40. The contact elements 40 may be sUSpending wire-bonding pins and a plating layer 41 is formed. The contact elements 40 are provided on the contact surface of the Shixi substrate 10 丨 丨And is electrically connected to the corresponding electrical through-holes 13 to probe the semiconductor wafer to be tested The arrangement and distribution pattern of the contact elements 40 corresponds to the wafer electrode position of the semiconductor wafer to be tested, such as the center or periphery of the wafer or the matrix arrangement position. The bonding surface j 2 is used as the bonding back surface of the probe head. To form a detection card, the connection surface 12 is formed with a plurality of connection pads 31, which are connected with the lead terminals 5 0 ′ such as solder balls or pins. In this embodiment, the connections 塾 3 1 The protective layer 62 is directly installed on the electrical through holes 3 and exposed on the bonding surface 62. Therefore, the lead terminals 50 are electrically connected to the corresponding via the connection pads 3 The electrical through hole 3 is used for combining and electrically connecting to a dielectric panel of a detection card. Therefore, in the above-mentioned modular probe, the electrical through-holes with silicon dioxide layer 14 in the hole wall are used to electrically conduct the silicon substrate.

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The upper surface 11 and the bonding surface 12 allow the conductive terminals 50 to be configured with the bonding surface 12 without affecting the contact elements formed on the probing surface. During the test process, avoid these The lead terminal 50 improperly contacts the wafer of the object under test, so the size of the silicon substrate i 0 can be more reduced to correspond to the half of the wafer under test 3: [one or more predetermined number of wafers], and the silicon substrate mainly detects The electrical connection elements of the card's dielectric panel no longer need to be bonded with solder wires or flexible circuit boards around the probe surface 11, but are concealed on the non-exposed bonding surface 12, and through these electrical through holes 13 and The lead terminal 50 reaches a relatively electrically conductive path, which is suitable for high-frequency testing. The manufacturing method of the silicon substrate of the above-mentioned modular probe head is also described in detail below. Referring to FIG. 3A, a silicon substrate 10 of a semiconductor material is provided, and the silicon substrate 10 is integrated in the manufacturing process. Formed on a wafer, the process and equipment can be shared with the wafer produced by the integrated circuit, and the silicon substrate 10 'is oxidized in a high-temperature chamber so that a silicon dioxide layer is formed on the touch surface 11 and the bonding surface 12 [si 1 icon dioxide]; please refer to FIG. 3B again, a metal layer 20 ′ is formed on the touch surface I of the Shixi substrate 10 by sputtering technology, and a photoresist layer 70 is covered on the metal layer 2 〇, the photoresist layer 70 is exposed and developed with a plurality of openings 71, corresponding to the Shi Xi substrate 1

The positions of the through holes 13 are determined; please refer to FIG. 3C again, and use laser drilling or reactive ion etching (RIC) technology to correspond to the openings 71 of the photoresist layer 70 in the silicon substrate 1. A plurality of through-holes 1 3 are formed on the surface ′, and referring to FIG. 3D ′, the broken substrate 1 is oxidized, so that a silicon dioxide layer 14 is formed on the hole wall of the through-holes 13. The bonding surface 12 of the substrate 10 is attached with a metal foil 30 such as copper foil; please refer to section 3.

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V. Description of the invention (6) In the figure, a conductive substance 15 is filled in the through-holes 13 by chemical plating or printing, so that the through-holes 13 are electrically connected to the contact surface 11 of the Shixi substrate 10. And the bonding surface 12 (that is, the metal layer 20 and the metal foil 30), and thereafter, the metal layer 20 becomes the above-mentioned metal circuits 21, and the etching of the metal box 30 becomes the above-mentioned connection pads 31 for separate bonding The contact element 40 and the lead-in terminal 50 are on different surfaces of the silicon substrate 10. Preferably, the touch surface 11 and the bonding surface 12 of the stone substrate 1 are covered with a protective layer 6 and 6 respectively. 2, = Protect the inner layer circuit. Therefore, the manufacturing method of the present invention is capable of manufacturing a modular probe head with a small size and suitable for high frequency testing. This issue shall prevail. The scope of protection stated in Ren Wei shall be deemed to be defined by the scope of the appended patent application. Those who are familiar with this technology, and any changes and modifications that do not depart from the spirit and scope of the invention belong to the invention. protected range.

Page 11 1220932 Schematic description-[Schematic description] Fig. 1: Schematic sectional view of the modularized probe head of the present invention. ‘Figure 2: Schematic diagram of the touch surface of the modular probe head of the present invention. -Figures 3A to 3F: cross-sectional views of the silicon substrate of the modular probe of the present invention during the manufacturing process. Brief description of component symbols: 10 silicon substrate 11 contact surface 12 bonding surface 13 through hole 14 — silicon oxide layer 15 conductive material 20 metal layer 21 metal circuit 22 contact pad 30 metal foil 31 connection pad 40 contact element 41 electroplated layer 50 conductive connection Terminal 61 protective layer 62 protective layer 70 photoresist layer 71 opening

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Claims (1)

A220932 6. Scope of patent application [Scope of patent application, a modular probe head, including: a silicon substrate with a touch surface, a bonding surface, and a plurality of through-holes, the electrical through-holes are through the probe The contact surface and the bonding surface, the hole walls of the electrical through holes are formed with silicon dioxide ^ filled with a conductive substance; a plurality of contact elements are provided on the contact surface of the silicon substrate and are electrically connected to the corresponding electrical A through-hole is used to probe the semiconductor wafer to be tested; and, a plurality of lead terminals are provided on the bonding surface of the silicon substrate and are electrically connected to the corresponding electric through-holes to form a detection card.丨 The modular probe head described in item 1 of the Shishen kiss patent scope, wherein the electrical through-holes are arranged in a matrix. 3 a The modular probe head as described in item 1 or 2 of the patent application scope, wherein some of the lead terminals are combined with the electrical through holes. 43. The modular probe head as described in item 3 of the scope of the patent application, wherein a connection pad is formed between each electrical f-through hole and a corresponding lead terminal. 5. The modular probe head as described in item 丨 of Shenqing's patent scope, wherein the contact elements are suspending, wire-bonding pins. 6 7 μ ^ The modular probe head described in item 5 of the patent scope, in which some of the junction probes are formed with a plating layer. & i Γ kiss the modular probe described in the first paragraph of Patent Knowledge 4, wherein a protective layer is formed on the contact surface of the rock and soil 2 and the bonding surface, a manufacturing method of the modular probe, contain: Page 13 ^ 20932 The scope of the Shenyang patent provides a silicon substrate with a probe surface and a bonding surface for forming contact elements and lead terminals, respectively; forming a plurality of through holes to penetrate the probe The surface and the bonding surface; oxidizing the silicon substrate, so that a layer of stone dioxide is formed in the hole walls of the through holes; and filling conductive holes in the through holes to electrically penetrate the probe surface and the bonding surface. 9. According to the manufacturer of the modular probe head described in item 8 of the scope of the patent application, the contact surface of the Shixi substrate was sputtered to form a metal layer. I ϋ 凊 The manufacturer of the modular probe head described in item 8 of the patent scope ', these through holes are formed by laser drilling or reactive ion etching. · Manufacturing of modular probes II. „Hai conductive material is formed by chemical plating method or printing method before the manufacture of the modular probes described in Item 12. 'The bonding surface of the silicon substrate is as patented The eleventh method, wherein a metal foil is provided on the electroless plating.