TW593789B - Electroplating method for substrate - Google Patents
Electroplating method for substrate Download PDFInfo
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- TW593789B TW593789B TW92119806A TW92119806A TW593789B TW 593789 B TW593789 B TW 593789B TW 92119806 A TW92119806 A TW 92119806A TW 92119806 A TW92119806 A TW 92119806A TW 593789 B TW593789 B TW 593789B
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- substrate
- layer
- pads
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- 239000000758 substrate Substances 0.000 title claims abstract description 96
- 238000000034 method Methods 0.000 title claims abstract description 50
- 238000009713 electroplating Methods 0.000 title claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 68
- 239000002184 metal Substances 0.000 claims abstract description 68
- 238000007747 plating Methods 0.000 claims description 30
- 230000000873 masking effect Effects 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 150000002739 metals Chemical class 0.000 claims description 8
- 229910000679 solder Inorganic materials 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000007772 electroless plating Methods 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 30
- 239000007769 metal material Substances 0.000 claims 4
- 239000002356 single layer Substances 0.000 claims 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 230000005611 electricity Effects 0.000 claims 2
- 229910052718 tin Inorganic materials 0.000 claims 2
- 239000011135 tin Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000004804 winding Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000005065 mining Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000011265 semifinished product Substances 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 241000282376 Panthera tigris Species 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000009417 prefabrication Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Abstract
Description
593789 _案號92119806_年月日__ 五、發明說明(1) . 【發明所屬之技術領域】 本發明是有關於一種基板電鍍製程,且特別是有關 於一種不需製作電鍍線(plating line)即可利用電鑛方式 同時完成基板之雙面電鍍的製程。 【先前技術】 在現今的資訊社會中,均追求高速度、高品質、多工 能性的產品,而就產品外觀而言,係朝向輕、薄、短、小 的趨勢邁進。為了達到上述目的,現今許多公司均想盡各 種方式縮減線路之尺寸,其中就晶片内之繞線尺寸而言, 由於導入銅製程的概念,因此晶片内之金屬線寬可以大幅 度的縮減,甚至已經進入到奈米等級的階段。而為了縮減 基板之體積,亦可以從縮減基板之金屬線路的線寬及金屬 線路之間的間距者手。 在習知技術中,一般會利用電鍍的方式形成金屬層在 基板之表面上,因此必須要特別增設額外的電鍍線路 (plating line),使得當基板放入到電艘槽中時,其中一 電極可以藉由接觸此電鍍線路而與基板之金屬層電性連 接,如此便可以電鑛金屬到基板上。然而,在上述的習知 技術中,必須要特別增設額外的電鍍線路才能進行電鍍製 程,因此會浪費基板的繞線空間,而且難以製作出高接點 數目之基板。另外,最後電鍍完成之後,還必須要切掉此 用於電鍍製程之電鍍線路,徒增製作基板的時間及成本, 且即使在切掉此電鍍線路之後,還是會留段尾巴在基板 上,並不會完全地切除乾淨,如此當訊號在流經與尾巴連593789 _case number 92119806_year month__ V. Description of the invention (1). [Technical field to which the invention belongs] The present invention relates to a substrate plating process, and in particular, to a plating line that does not require a plating line. ) Can complete the process of double-sided electroplating of the substrate at the same time by using the electric ore method. [Previous technology] In today's information society, high-speed, high-quality, and multi-functional products are pursued. As far as product appearance is concerned, the trend is toward lighter, thinner, shorter, and smaller. In order to achieve the above purpose, many companies now want to reduce the size of the circuit in various ways. Among them, as for the size of the windings in the wafer, the metal wire width in the wafer can be greatly reduced due to the introduction of the concept of copper process. Has entered the stage of the nano level. In order to reduce the volume of the substrate, you can also reduce the line width of the metal lines on the substrate and the distance between the metal lines. In the conventional technology, a metal layer is generally formed on the surface of the substrate by electroplating. Therefore, an extra plating line must be specially added so that when the substrate is placed in an electric boat tank, one of the electrodes It can be electrically connected to the metal layer of the substrate by contacting this plating circuit, so that the metal can be electro-mineralized to the substrate. However, in the above-mentioned conventional technology, an extra plating line must be specially added to perform the plating process, so the winding space of the substrate is wasted, and it is difficult to produce a substrate with a high number of contacts. In addition, after the final electroplating is completed, the plating line used for the electroplating process must be cut off, which increases the time and cost of manufacturing the substrate, and even after the plating line is cut off, a tail is still left on the substrate, and Will not be completely cut off, so when the signal flows through the tail
11477twf1.ptc 第8頁 593789 ____塞號92119806_年月日_____ 五、發明說明(2) 接的線路時,會產生較大幅度的雜訊,使得基板之電性效 能降低。 為改善上述的問題,可以利用無電電鍍的方式形成金 屬到基板上,然而利用此種方式所形成的金屬甚薄’且由 無電電鍍所形成之金屬的品質並不穩定。 【發明内容】 本發明的主要目的係提出一種基板電鍍製程,利用基 板單面(one-side)之導電種子層及電鍍面的設計,可同時 完成基板的雙面(both-side)電鍵,能夠有效簡化基板電 鍍製程。 本發明的另一目的係提出一種基板電鍍製程,可不需 增設額外的電鍍線即可進行電鍍製程,而使基板有更多的 繞線空間以製作出高接點數目的基板,並可避免因電鍍線 殘留而造成基板電性效能降低的問題。 為達成本發明之上述目的,提出一種基板電鑛製程, 至少包括下列步驟。首先,提供一已完成前段製程的基 板,具有基板内部線路及一第一表面及對應之一第二表 面,該第一表面上具有複數個第一接塾(p a d )及複數個線 路圖案(trace) ’該第一表面上具有複數個第二接墊及複 數個線路圖案,並且該第一及第二表面上分別具有一銲罩 層覆蓋該些線路圖案而暴露出該些第一接墊及該些第二接 墊,其中忒些第一接墊藉由該基板内部線路與該些第二接 墊電性連接;接著,形成一導電種子層(conductive seed layer)覆蓋在該基板之第一表面上;然後,同時於基板之11477twf1.ptc Page 8 593789 ____ plug number 92119806_year month_____ V. Description of the invention (2) When the circuit is connected, a large amount of noise will be generated, which will reduce the electrical performance of the substrate. In order to improve the above problems, metal can be formed on the substrate by electroless plating. However, the metal formed by this method is very thin 'and the quality of the metal formed by electroless plating is not stable. [Summary of the Invention] The main object of the present invention is to propose a substrate plating process, which uses the design of the conductive seed layer and the plating surface of one-side of the substrate, and can simultaneously complete both-side electrical keys of the substrate. Effectively simplify substrate plating process. Another object of the present invention is to provide a substrate plating process, which can be performed without the need for an additional plating line, so that the substrate has more winding space to produce a substrate with a high number of contacts, and can avoid The problem of reduced electrical performance of the substrate caused by the residual plating lines. In order to achieve the above object of the present invention, a substrate electro-mineralization process is proposed, which includes at least the following steps. First, a substrate having completed the previous process is provided, which has internal circuits of the substrate and a first surface and a corresponding second surface. The first surface has a plurality of first pads and a plurality of circuit patterns (traces). ) 'The first surface has a plurality of second pads and a plurality of circuit patterns, and each of the first and second surfaces has a solder mask layer covering the circuit patterns to expose the first pads and The second pads, wherein the first pads are electrically connected to the second pads through an internal circuit of the substrate; then, a conductive seed layer is formed to cover the first of the substrate. On the surface; then, simultaneously on the substrate
11477twf1.ptc 第9頁 593789 _案號92119806_年月曰 修正_ 五、發明說明(3) 第一及第二表面上,電鑛形成金屬層在該導電種子層上及 該些第二接墊上。 綜上所述,僅需形成導電種子層在基板之第一表面 上,透過與第一接墊及第二接墊電性連接之基板内部線 路,便可以藉由電鍍的步驟,同時形成金屬層在基板之第 一及第二表面上,如此相較於習知技術,可以縮減基板之 製作過程。 為讓本發明之上述目的、特徵、和優點能更明顯易 懂,下文特舉一較佳實施例,並配合所附圖式,作詳細說 明如下: 【實施方式】 第一較佳實施例 請參照第1圖至第8圖,其繪示依照本發明第一較佳實 施例之基板製程的剖面示意圖。請參照第1圖,首先要提 供一已完成前段製程的基板1 0 0,比如是以四層板為例, 其具有四層金屬層111、112、113、114及三層絕緣層 115、116、117,金屬層 111、112、113、114 及絕緣層 1 1 5、1 1 6、1 1 7係相互疊層接合,每一相鄰的金屬層1 1 1 、 1 1 2、1 1 3、1 1 4之間係配置其中一層之絕緣層1 1 5、1 1 6、 117,作為電性隔離之用,而金屬層111 、112、113、114 的材質比如是銅。而已完成前段製程的基板100還具有多 個連接孔1 1 8 (圖示中僅繪示出其中的一個),連接孔1 1 8的 孔壁上形成有金屬1 1 9,藉以電性連接金屬層1 1 1 、1 12、 1 1 3、1 1 4中的其中至少兩層,而絕緣材料1 9 1可以選擇性11477twf1.ptc Page 9 593789 _Case No.92119806_ Revised Year of the Month _5. Description of the invention (3) On the first and second surfaces, a metal layer is formed on the conductive seed layer and the second pads . In summary, it is only necessary to form a conductive seed layer on the first surface of the substrate, and through the internal circuit of the substrate electrically connected to the first pad and the second pad, a metal layer can be formed at the same time through the plating step. On the first and second surfaces of the substrate, compared with the conventional technology, the manufacturing process of the substrate can be reduced. In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings for detailed description as follows: [Embodiment] The first preferred embodiment, please Referring to FIGS. 1 to 8, there are shown schematic cross-sectional views of a substrate manufacturing process according to a first preferred embodiment of the present invention. Please refer to Figure 1. First, a substrate 100 that has completed the previous process must be provided. For example, a four-layer board is used as an example. It has four metal layers 111, 112, 113, 114, and three insulating layers 115, 116. , 117, metal layers 111, 112, 113, 114 and insulating layer 1 1 5, 5, 1 1 6 and 1 1 7 are laminated and bonded to each other, and each adjacent metal layer 1 1 1, 1 1 2, 1 1 3 One of the insulating layers 1 1 5, 1 1 6, and 117 is arranged between 1 and 4 for electrical isolation, and the material of the metal layers 111, 112, 113, and 114 is, for example, copper. The substrate 100 that has completed the previous process also has a plurality of connection holes 1 1 8 (only one of which is shown in the figure). A metal 1 1 9 is formed on the wall of the connection hole 1 1 8 to electrically connect the metal. Layers 1 1 1, 1 12, 1 1 3, 1 1 4 at least two of them, and the insulating material 1 9 1 can be selectively
11477twf1.ptc 第10頁 593789 案號 92119806 曰 修正 五、發明說明(4) 地填入到貫孔1 1 8中。已完成前段製程的基板丨〇 〇具有二對 應之表面120、130,其中金屬層111 、114係分別位在已完 成前段製程的基板100之表面120、130上。 清參照弟2圖’比如可以利用微影钱刻的步驟,圖案 化金屬層111 、114 ’金屬層ill比如具有多個接塾122及'線 路圖案124,而金屬層114比如具有多個接墊132及線路圖 案133,其中接塾122比如可以透過連接孔jig中的金屬iig 電性連接於接墊1 3 2。接著,請參照第3圖,比如可以利用 網板印刷的方式分別形成銲罩層丨4〇、丨45於絕緣層丨丨5、 1 1 7上’鮮罩層1 4 0、1 4 5分別具有多個開口 i 4 2、i 4 6,暴 露出金屬層111 、114之接墊122、132,且銲罩層140、145 分別,蓋金屬〃層1 1 1 、1 1 4之線路圖案丨2 4、丨3 3的部分。 请參照第4圖,接著比如可以利用濺鍍的方式或盔電 電鍍的方式,形成一導電種子層15〇(c〇nductive “以 罩層145上,且導電種子層Μ會覆蓋金屬層 114之接墊132 ’其中導電種子層15〇之結構比如是由下列 絡、Η、銀及上述金屬之 ;U t 層構或多層結構。請參照第5 ®,接 —其鍍的步驟,由於接墊132可以透過預先製作 =之J板内部線路電性連接於接墊122,因此透過電鑛 金眉声1°6 2以時形成金屬層160在導電種子層150上及形成 曰* 4s i接塾122上’其中金屬層160、162之結構比如 ^ ^ ^ ^ 鱼屬材貝 鎳、金及上述金屬之合金,所 構成的早層結構或多層結構。11477twf1.ptc Page 10 593789 Case No. 92119806 Amendment V. Description of Invention (4) Fill in the through holes 1 1 8. The substrate that has completed the previous process has two corresponding surfaces 120 and 130. The metal layers 111 and 114 are respectively located on the surfaces 120 and 130 of the substrate 100 that have completed the previous process. For reference, please refer to Figure 2. For example, the steps of lithography can be used to pattern the metal layers 111 and 114. The metal layer ill, for example, has multiple contacts 122 and the circuit pattern 124, and the metal layer 114, for example, has multiple pads. 132 and the line pattern 133, wherein the connection pad 122 can be electrically connected to the pad 1 2 through the metal iig in the connection hole jig, for example. Next, please refer to FIG. 3, for example, a solder mask layer can be formed by screen printing 丨 4〇, 丨 45 on the insulating layer 丨 5, 1 1 7 'fresh cover layers 1 4 0, 1 4 5 respectively With multiple openings i 4 2 and i 4 6, the pads 122 and 132 of the metal layers 111 and 114 are exposed, and the solder mask layers 140 and 145 respectively cover the circuit patterns of the metal gallium layers 1 1 1 and 1 1 4 丨2 4 、 丨 3 3 parts. Please refer to FIG. 4, and then, for example, a conductive seed layer 15 may be formed by a sputtering method or a helmet electroplating method, and the conductive seed layer M will cover the metal layer 114. The pad 132 'wherein the structure of the conductive seed layer 15 is composed of the following metals, osmium, silver, and the above metals; U t layered structure or a multilayer structure. Please refer to Section 5 ®, its plating steps. 132 can be electrically connected to the pad 122 through the internal circuit of the J-board made in advance. Therefore, the metal layer 160 can be formed on the conductive seed layer 150 and the * 4s i connection 122 through the electric ore gold eyebrow sound at 1 ° 62. 'Where the structure of the metal layers 160 and 162 is, for example, an early layer structure or a multi-layer structure composed of the fish genus nickel, gold, and an alloy of the above metals.
593789 ---塞號92119806_年月日 條正 五、發明說明(5了 " " " 接下來,可以進行微影餘刻的步驟,藉以圖案化金屬 層 叫參照第6圖’首先要形成一罩蔽層170在金屬層16〇 ^ ’其中罩蔽層1 7 0的材質比如是光阻,經過曝光、顯影 等步驟’罩蔽層170會形成覆蓋區域172及暴露區域174〔 罩蔽層之覆蓋區域172係大致上對準接塾132的位置, 而罩蔽層170之暴露區域174會暴露出金屬層16〇。接著, ^以進行餘刻製程,其係以罩蔽層1 7 〇之覆蓋區域丨7 2作為 餘刻罩蔽,蝕刻位在罩蔽層170之暴露區域174下的金屬層 j 6 〇,形成如第7圖所示的結構。最後,再去除罩蔽層 7 〇 ’形成如第8圖所示的結構,如此基板2 〇 〇便製作完 成。其中由接墊132可以透過導電種子層150及金屬層160 與鮮球(未繪示)接合,作為銲球墊(baU pad)之用,而接 可以透過金屬層150與凸塊(未繪示)或導線(未繪示) 合’作為凸塊墊(bump pad)或導線接合墊(bonding f 1 nger )之用。 • 在本實施例中,基板2 0 0係以四層板為例,然而在實 際應用上’本發明的電鍍概念亦可以應用在比如是六層 板、八層板或是其他層數之基板。 在上述的基板製程中,由於僅需形成導電種子層15〇 在銲罩層145上及接墊132上,並透基板2〇〇之内部線路使 接塾1 2 2、1 3 2電性連接,因此當在進行電鑛步驟時,可以 同時分別形成金屬層160、162在導電種子層150及接墊122 上,而且在電鑛製程之後,並不需進行微影蝕刻的步驟藉 以圖案化金屬層1 6 2,如此可以縮減基板之製作過程。另593789 --- September 92191986_ Article 5 of the invention description (5) " " " Next, the lithography steps can be performed, so that the patterned metal layer is called with reference to Figure 6 'First To form a masking layer 170 on the metal layer 16 ^ 'The material of the masking layer 170 is, for example, a photoresist, and through steps such as exposure and development, the masking layer 170 will form a covering area 172 and an exposed area 174 [ The covering area 172 of the masking layer is substantially aligned with the position of the junction 132, and the exposed area 174 of the masking layer 170 will expose the metal layer 160. Then, ^ for the remaining process, it is the masking layer 1 7 〇 Covering area 丨 7 2 is used as a mask, and the metal layer j 6 located under the exposed area 174 of the masking layer 170 is etched to form the structure shown in Figure 7. Finally, the masking layer is removed. 7 ′ ′ is formed as shown in FIG. 8, so that the substrate 2000 is completed. The pads 132 can be connected to the fresh balls (not shown) through the conductive seed layer 150 and the metal layer 160 as solder balls. BaU pad, which can pass through the metal layer 150 and the bump (not shown) (Shown) or wires (not shown) are used as bump pads or wire bonding pads (bonding f 1 nger). • In this embodiment, the substrate 200 is a four-layer board as an example. However, in practical applications, the plating concept of the present invention can also be applied to substrates such as six-layer boards, eight-layer boards, or other layers. In the above-mentioned substrate manufacturing process, since only a conductive seed layer 15 is required to be formed, The solder mask layer 145 and the pad 132 are connected through the internal circuit of the substrate 2000 to electrically connect the connector 1 2 2 and 1 3 2. Therefore, the metal layer 160 can be formed at the same time when the power mining step is performed. And 162 are on the conductive seed layer 150 and the pad 122, and after the electric mining process, the step of lithographic etching is not required to pattern the metal layer 1 62, so that the manufacturing process of the substrate can be reduced.
593789593789
外 曰 修正 ^ ’藉由上述的方式進行電鑛製程,並不需配置用於電鑛 ,程之電鍍線路在已完成前段製程的基板1〇〇上,而可以 留給更多的空間作其他用途之繞線之用,且可以節省切斷 $電錢線路之製程,故不會因為切不乾淨而留有一段尾巴 古基板2 〇 〇上,使得基板2 〇 〇之電性效能降低,並且在傳輸 门頻j 5虎上’本發明之基板2 〇 〇亦具有甚佳的效能。 第二較佳實施例 9圖然而在實際應用上並不限於上述的較佳實施例,如第 基·柄制第12圖所示,其繪示依照本發明第二較佳實施例之 二樣i程的剖面示意圖’其中若是標號與第一較佳實施例 實# n i則表示此標號所代表之構件係雷同於在第一較佳 也11此標號所代表之構件,在此便不在贅述。 程,二r第9圖,其係接續第一較佳實施例中第4圖之製 形成罩電至二子層150於銲罩層145上之後,接著還要 質比如曰二〇 ^電種子層1 5 0上,其中罩蔽層3 7 0的材 成多個二經過曝光、顯影等步驟,罩蔽層3 7 0會形 置俜女:口 7 2 ’暴露出導電種子層1 5 0 ,且開口 3 7 2的位 以墊132的位置。請參照第10圖,接著可 之基板内^線I ί,由於接墊132可以透過預先製作完成 程,可以^眭^電性連接於接墊1 2 2,因此透過電鍍製 如是由下列至少& M 士二其中金屬層3 6 0、3 6 2之結構比 所構成的“xm冓錄、金及上述金屬之合金,Amendments ^ 'Using the above-mentioned method for the electric mining process, there is no need to configure for electric mining. The electroplating circuit of the process is on the substrate 100 which has completed the previous process, and more space can be left for other It can be used for winding, and can save the process of cutting off the electric power line, so it will not leave a piece of tail on the ancient substrate 2000 because it is not cleaned, which will reduce the electrical performance of the substrate 2000, and On the transmission gate frequency j 5 tiger, the substrate 200 of the present invention also has excellent performance. Fig. 9 of the second preferred embodiment is not limited to the above-mentioned preferred embodiment in practical application, as shown in Fig. 12 of the handle and handle system, which shows the second preferred embodiment according to the present invention. A cross-sectional schematic diagram of the process, wherein if the reference numeral is the same as that of the first preferred embodiment, it means that the component represented by this reference numeral is the same as the component represented by the first preferred reference numeral, and will not be repeated here. FIG. 9 is a diagram of the second embodiment, which is the continuation of the system shown in FIG. 4 of the first preferred embodiment. After forming the mask to the second sub-layer 150 on the solder mask layer 145, it is necessary to further describe the second seed layer. On 150, the material of the masking layer 37 is formed into a plurality of steps. After exposure, development and other steps, the masking layer 3 7 0 will be placed in the shape of a girl: the mouth 7 2 'exposes the conductive seed layer 1 50. The position of the opening 3 7 2 is the position of the pad 132. Please refer to FIG. 10, and then the inner line ^ of the substrate can be used. Because the pad 132 can be completed through pre-fabrication, it can be electrically connected to the pad 1 2 2. Therefore, by electroplating, if at least & M Shi Er, in which the structure ratio of the metal layers 3 6 0, 3 6 2 constitutes "xm 冓 Record, gold and alloys of the above metals,
11477twfl.ptc 第13頁 593789 _案號92119806_年月日_iMz_ 五、發明說明(7) 接下來,可以進行去除罩蔽層370的步驟,如第11圖 所示。最後,可以進行蝕刻製程,其係以金屬層3 6 0作為 蝕刻罩蔽,蝕刻暴露於外之導電種子層1 5 0 ,如第1 2圖所 示,如此基板4 0 0便製作完成。 結論 綜上所述,本發明至少具有下列優點: 1 .本發明之基板製程,由於僅需形成一導電種子層在 已完成前段製程的基板之其中一表面上,便可以藉由電鍍 的步驟,分別形成金屬層在基板之二表面上,而且在電鍍 製程之後,並不需在基板之兩面均進行微影的步驟,藉以 圖案化金屬層,如此可以縮減基板之製作過程。 2 .本發明之基板製程,並不需配置用於電鍍製程之電 鍍線路在基板上,因此可以留給更多的空間作其他用途之 繞線之用,且可以節省切斷此電鍍線路之製程,故不會因 為切不乾淨而留有一段尾巴在基板上,使得基板之電性效 能降低,並且在傳輸高頻訊號上,本發明之基板亦具有甚 佳的效能。 雖然本發明已以一較佳實施例揭露如上,然其並非 用以限定本發明,任何熟習此技藝者,在不脫離本發明之 精神和範圍内,當可作各種之更動與潤飾,因此本發明之 保護範圍當視後附之申請專利範圍所界定者為準。11477twfl.ptc Page 13 593789 _ Case No. 92119806_year month_iMz_ V. Description of the invention (7) Next, the step of removing the masking layer 370 can be performed, as shown in FIG. 11. Finally, an etching process can be performed, which uses the metal layer 360 as an etching mask to etch the conductive seed layer 150 exposed to the outside, as shown in FIG. 12, and thus the substrate 400 is completed. Conclusion In summary, the present invention has at least the following advantages: 1. Since the substrate process of the present invention only needs to form a conductive seed layer on one surface of the substrate that has completed the previous process, the plating process can be used, Metal layers are respectively formed on the two surfaces of the substrate, and after the electroplating process, it is not necessary to perform a lithography step on both sides of the substrate, thereby patterning the metal layer, so that the manufacturing process of the substrate can be reduced. 2. The substrate process of the present invention does not need to be provided with a plating circuit for the plating process on the substrate, so more space can be left for other purposes for winding, and the process of cutting the plating circuit can be saved. Therefore, a tail is not left on the substrate because the cutting is not clean, so that the electrical performance of the substrate is reduced, and the substrate of the present invention also has excellent performance in transmitting high-frequency signals. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make various changes and decorations without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application.
11477twf1.ptc 第14頁 593789 _案號92119806_年月曰 修正__ 圖式簡單說明 第1圖至第8圖繪示依照本發明第一較佳實施例之基板 製程的剖面示意圖。 第9圖至第1 2圖繪示依照本發明第二較佳實施例之基 板製程的剖面示意圖。 【圖式標示說明】 1 00 基 板 半 成品 111 金 屬 層 112 金 屬 層 113 金 屬 層 114 金 屬 層 115 絕 緣 層 116 絕 緣 層 117 絕 緣 層 118 連 接 孔 119 金 屬 120 表 面 122 接 墊 124 線 路 圖 案 130 表 面 132 接 墊 133 線 路 圖 案 140 銲 罩 層 142 開 口 145 鮮 罩 層 146 開 a 1 50 金 屬 層 160 金 屬 層 162 金 屬 層 170 罩 蔽 層 1 72 覆 蓋 區 域 174 暴 露 區 域 191 絕 緣 材 料 200 基 板 310 基 板 半 成品 360 金 屬 層 362 金 屬 層 370 罩 蔽 層 372 開 V 400 基 板11477twf1.ptc Page 14 593789 _Case No.92119806_ Year Month Amendment __ Brief Description of Drawings Figures 1 to 8 show schematic cross-sectional views of the substrate manufacturing process according to the first preferred embodiment of the present invention. 9 to 12 show schematic cross-sectional views of a substrate manufacturing process according to a second preferred embodiment of the present invention. [Illustration of Graphical Symbols] 1 00 semi-finished product of substrate 111 metal layer 112 metal layer 113 metal layer 114 metal layer 115 insulating layer 116 insulating layer 117 insulating layer 118 connection hole 119 metal 120 surface 122 pad 124 line pattern 130 surface 132 pad 133 Circuit pattern 140 Welding cover layer 142 Opening 145 Fresh cover layer 146 Open a 1 50 Metal layer 160 Metal layer 162 Metal layer 170 Masking layer 1 72 Covering area 174 Exposed area 191 Insulating material 200 Substrate 310 Substrate semi-finished product 360 Metal layer 362 Metal layer 370 Masking layer 372 KV 400 substrate
11477twf1.ptc 第15頁11477twf1.ptc Page 15
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TW92119806A TW593789B (en) | 2003-07-21 | 2003-07-21 | Electroplating method for substrate |
US10/710,561 US6896173B2 (en) | 2003-07-21 | 2004-07-21 | Method of fabricating circuit substrate |
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TW92119806A TW593789B (en) | 2003-07-21 | 2003-07-21 | Electroplating method for substrate |
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