TW584922B - Method of manufacturing semiconductor package - Google Patents

Method of manufacturing semiconductor package Download PDF

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Publication number
TW584922B
TW584922B TW091114733A TW91114733A TW584922B TW 584922 B TW584922 B TW 584922B TW 091114733 A TW091114733 A TW 091114733A TW 91114733 A TW91114733 A TW 91114733A TW 584922 B TW584922 B TW 584922B
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TW
Taiwan
Prior art keywords
mold
sub
item
manufacturing
semiconductor package
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Application number
TW091114733A
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Chinese (zh)
Inventor
Huan-Ping Su
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United Test Ct Inc
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Publication of TW584922B publication Critical patent/TW584922B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

A method of manufacturing semiconductor package comprising a curing process by means of a clamping apparatus with a cavity used to accommodate a submold and at least one exhaust passage for connecting the submode to an external exhauster is provided. As a chip carrier that is attached a plurality of semiconductor dies puts into the clamping apparatus to perform curing process, air removed through the submold and the exhaust passage makes a negative environment of the cavity. The negative environment of the cavity in a manner that brings an attraction, allowing balancing the excessive thermal stress of the chip carrier during curing process. So as to avoid warpage of the chip carrier or delamination and making planarity of the carrier better is performed, and then the working quality of solder reflow and test to be enhanced.

Description

584922 五、發明說明(1) 【發明領域】·· 本發明係關於一種半導體封裝件之製法,尤指一種以 特殊’口具(Jig)應用於上片作業(Attachment)之 半導體封裝件製法。 【發明背景】: 球柵陣列(BGA)半導體封裝件(Ball Gri(i Array584922 V. Description of the Invention (1) [Field of Invention] The present invention relates to a method for manufacturing a semiconductor package, and more particularly to a method for manufacturing a semiconductor package with a special 'Jig' applied to an on-chip operation (Attachment). [Background of the invention]: Ball grid array (BGA) semiconductor package (Ball Gri (i Array

Semiconductor Package)係一種於基板底面上植佈多數 呈矩陣列置之銲球(solder Bal 1)以供半導體晶片電性 連接到外部印刷電路板(PCB)上之封裝結構,因較傳統 導線架(Lead frame)為主之半導體裝置擁有更密集之輸 出/輸入連接端(I/O connecti〇ns)而可容納具較多電子 電路及電子元件之半導體晶片,更切合高功能性及高處理 速度之電子產品需求而一躍成為今後之封裝主流。 惟業界為降低製程成本,一般採用之球栅陣列封裝件 製法皆以批次型態(Batch Type)製作,主包含以下步 驟:首先備妥一矩陣式基板(Matrix Strips),其上係 預先定義出複數個供晶片載接之基板單元;復進行上片作 業’藉一膠黏劑將複數片半導體晶片逐一黏置到各基板單 元内’並實施烘烤程序(Cur ing)使各晶片穩定著固於供 其承載之矩陣式基板上;而後經過銲線作業(w丨r e(Semiconductor Package) is a packaging structure where most of the solder balls (solder Bal 1) are arranged in a matrix on the bottom surface of the substrate for the semiconductor chip to be electrically connected to an external printed circuit board (PCB). Lead-frame) semiconductor devices have denser I / O connect terminals and can accommodate semiconductor chips with more electronic circuits and electronic components, which is more suitable for high functionality and high processing speed. The demand for electronic products has become the mainstream of packaging in the future. However, in order to reduce the process cost, the ball grid array package manufacturing method generally used in the industry is made in batch type, which mainly includes the following steps: first prepare a matrix strip (Matrix Strips), which is defined in advance Draw out a number of substrate units for wafer loading; repeat the wafer loading operation 'adhere a plurality of semiconductor wafers to each substrate unit by an adhesive' and implement a baking process (curing) to stabilize each wafer It is fixed on the matrix substrate for its carrying;

Bonding)令該半導體晶片與基板間形成電性連結,再以 模壓處理將一封裝膠體完整包覆半導體晶片;最後進行基 板底部植球及切單作業,即可製成複數個球栅陣列半導體 封裝件。Bonding) enables the semiconductor wafer to form an electrical connection with the substrate, and then a molding gel is used to completely cover the semiconductor wafer. Finally, the bottom of the substrate is planted and cut to form a plurality of ball grid array semiconductor packages. Pieces.

第5頁 584922 五、發明說明(2) 然而上述製法之半導體晶片藉一膠黏 式基板上後,為使晶片於後續製程中不致發生说彳該矩陣 位,須進行一高溫烘烤作業,使膠黏劑之‘人或, 下充分發揮以供晶片穩定固接至基板表面上:^於高溫 之實施,係將黏有多片半導體晶片之基板先置入j 1製程 (Jig Fixture)内夾持以便送入烘爐(〇ve ~治具 該治具為一具有一上模及一相對下模之夾固 ^ 模並凹设有一模穴(Μ 〇 1 d C a ν i t y),故當誃、、Α且且"亥下 片之基板中央部位均勻受熱。 ’、載有曰曰 惟二導體晶片係-高純度矽材質構成,其熱 (C〇efflclent of Thermal Expansi〇n,CTE)甚 係數 為3 ppm/X ),而矩陣式基板多為玻璃纖維、fr〜、、,、 聚亞酿胺(Polyimide)及環氧樹脂(Ep〇xy)化合二‘二 質製得,其熱膨脹係數介於18至5〇 ppm/t不等。4古材 溫烘烤時,該基板承受過大熱應力往往喪失其平面产同 (Coplanarity)而使封裝件半成品翹曲(Wa'rpag^, 致晶片與基板接合層剝離(Delaminati〇n)甚至發 裂損(Die Crack)等非預期現象,而嚴重危害封裝品 質0 又口口 * 一此外,·該封裝件如係運用於如數位相機或雷射印表機 等咼階(High-end)產品時,往往需要使用具有適度彎曲 性之軟性基板(Flexible Substrate)或薄型基板(Thin Substrate)作為晶片承栽件。然而,是種基板由於本身Page 5 584922 5. Description of the invention (2) However, after the semiconductor wafer of the above-mentioned manufacturing method is borrowed from an adhesive substrate, in order to prevent the wafer from talking about the matrix position in the subsequent process, a high temperature baking operation must be performed so that Adhesives can be used to stabilize the wafer to the surface of the substrate: ^ At high temperature, the substrate with multiple semiconductor wafers is placed in the j 1 fixture (Jig Fixture). It is held in order to be sent to the oven (〇ve ~ fixture. The fixture is a clamping ^ mold with an upper mold and an opposite lower mold and a mold cavity (M 〇 1 d C a ν ity) is recessed, so when誃 ,, Α, and " The lower part of the substrate is uniformly heated in the center of the substrate. '', Containing the only two-conductor wafer system-made of high-purity silicon material, its heat (Coefflclent of Thermal Expansion, CTE) The coefficient is 3 ppm / X), and the matrix substrate is mostly made of glass fiber, fr ~ ,,,, polyimide and epoxy resin (Epoxy), and its thermal expansion is The coefficients range from 18 to 50 ppm / t. 4 When the ancient materials are warmly baked, the substrate undergoes excessive thermal stress and often loses its planarity (Coplanarity), causing the package semi-finished product to warp (Wa'rpag ^, causing the wafer and substrate bonding layer to peel (Delaminati)) and even Unexpected phenomena such as die crack, which seriously jeopardizes the quality of the package. 0 In addition, the package is applied to high-end products such as digital cameras or laser printers. At times, it is often necessary to use a flexible substrate (Thin Substrate) or a thin substrate (Thin Substrate) with a moderate flexibility as a wafer carrier.

16124.ptd 第6頁 584922 五、發明說明(3) ____ 剛性(Rigidity)較為不足而具有 烤作業中,該基板如僅仰賴周侧部分提供2性:遂於 央持而供晶片黏接之基板他部均懸置於模二門、=上下模 程度勢必更為嚴重。曰曰曰u载件無法夺:2時奋翹曲 (uniform Coplanarity)往往植平面度 C SeIf-Allgnfflent) ,,錯誤等問題,且進入測試階段後,測試機 (Conductors)亦會因銲球底端構成之平面==,7點 試觸點無法完全觸接待測銲球,從 2致使測 度。 1 ; ,則试結果之可靠 3 ’傳統封裝件半成品隨著每批基板承載 =ί 大小及形狀不同,以及基板之材質特性各昱, fc白須就烘烤當時之作業半成品重新更換適 仏此兴 不但增加製程繁靖性,且為同一烘 ;種^ 備與製程架構下進行量產而無==巧在現有設 【發明概述】: 心而衣° 本發明之主要目的在於提供一種避 烘烤作業中發生-曲甚至脫層,以防止晶 列半導體封裝件製法及應用於該製法之新=:,球柵陣 本發明之另一目的即在提供一種雜 及測:可靠度,使基板底面接;之鮮; 球柵=半導體封裝件製法及應用於該製法 本發明之再一目的係在提供-種僅需更換治具;;子16124.ptd Page 6 584922 V. Description of the invention (3) ____ Rigidity is insufficient and has baking operation. If the substrate only relies on the peripheral part to provide 2 properties: the substrate is held in the center for wafer bonding All other parts are suspended in the second door, and the degree of the upper and lower molds is bound to be more serious. It is said that the U carrier cannot be seized: at 2 o’clock, the uniform coplanarity is often planted with C SeIf-Allgnfflent, errors, etc., and after entering the test stage, the testers (Conductors) will The plane formed by the end ==, the 7-point test contact cannot fully touch the test solder ball, resulting in a measurement from 2. 1;, the test results are reliable 3 'Traditional packaging semi-finished products With each batch of substrates carrying = different size and shape, as well as the material characteristics of the substrates, fc white must be replaced at the time when baking semi-finished products suitable for this Not only increase the complexity of the process, but also the same baking; species ^ production and production process under the framework of mass production without = = clever in the existing design [Summary of Invention]: heart and clothing ° The main purpose of the present invention is to provide a way to avoid baking -Curved or even delaminated during operation to prevent the manufacturing method of the crystal array semiconductor package and the new method applied to the manufacturing method ::, ball grid array Another object of the present invention is to provide a kind of reliability and reliability: Surface connection; Freshness; Ball grid = Semiconductor package manufacturing method and its application Another purpose of the present invention is to provide-only need to change the fixture;

16l24.ptd 第7頁16l24.ptd Page 7

584922 之上片作業 列半導體封 之球柵陣列 ,於該基板 至少一半導 移入一治具 一連通該子 及複數個連 通該等抽氣 ,俾令治具 負壓環境; 提供各半導 進行模壓作 ;最後進行 單製程,即 之製法,而 子模内部之 模穴空間相 放置到子模 貫穿頂面之 模穴内真空 在子模上產 五、發明說明(< 模即可進行 製程而減少 應用於該製 為達上 件製法係包 出複數個基 至各基板單 烘烤,該治 道,其中, 抽氣通孔, $而部及一外 氣通孔經該 卻,再施一 導接至供其 膠體包覆該 多數鲜球植 個球柵陣列 本發明 穴空間内增 孔係直接貫 載有晶片之 啟動外部排 及該排氣通 致治具内部 不同類型半 治具成本支 法之新穎治 揭及其他目 含:備妥一 板單元;用 元上;而後 具内設一抽 該子治具有 且該排氣通 接排氣裝置 排氣通道排 銲線製程以 承載之基板 半導體晶片 設於基板底 半導體封裝 摒除傳統按 設一抽換式 穿子模頂面 矩陣式基板 氣裝置使模 道排出治具 形成一負壓 導體封裳件 出之球栅陣 具。 的,本發明 矩陣式基板 一膠黏劑將 ,將該基板 換式子模及 一平坦頂面 道具有一連 之第二端部 除以形成一 複數條銲線 單元上,並 及該等銲線 面復實施切 件。 批更換治具 子模;由於 而與治具之 採倒置方式 穴空氣經由 外;屆時, 環境,進而 ,藉以簡化 裝件製法及 半導體封裝 上預先定義 體晶片黏接 内實施高溫 模之排氣通 通該頂面之 通孔之第一 内空氣由抽 待烘烤冷 體晶片電性 業用一封裝 植球作業以 可製得複數 於治具之模 多數抽氣通 通,因此將 頂面上,再 抽氣通孔以 度提昇將導 生一吸力,584922 A semiconductor-encapsulated ball grid array is mounted on a wafer, and at least half of the substrate is moved into a fixture, which communicates with the sub and a plurality of these exhausts, and orders the fixture to a negative pressure environment; each semiconductor is provided for molding. Finally, a single process is performed, that is, the manufacturing method, and the cavity space phase of the sub-mold is placed in the cavity of the sub-mold through the top surface. The vacuum is produced on the sub-mold. 5. Description of the invention (< It is applied to the system to achieve the above-mentioned method. It consists of a plurality of bases and a single baking for each substrate. The rule, in which, the exhaust air hole, $, and an external air through hole pass through this, and then a guide is applied. In order to provide the colloid for covering the majority of fresh balls with a ball grid array, the hole augmentation in the cavity space of the present invention directly starts the external row carrying the wafer and the exhaust gas leads to different types of semi-jig cost inside the jig. The novel treatment and other items include: prepare a board unit; use the upper element; then there is a substrate semiconductor wafer which is pumped by the sub-rule and the exhaust channel is connected to the exhaust channel of the exhaust device to carry out the welding process. Assume Substrate-bottom semiconductor packaging eliminates the traditional matrix-type substrate gas device that has a swap-through penetrating mold on the top surface, so that the mold path is ejected from the fixture to form a ball grid array with a negative-pressure conductor sealing member. The matrix substrate of the present invention An adhesive will divide the substrate replacement sub-mold and a flat second surface prop with a continuous second end portion to form a plurality of bonding wire units, and perform cutting on the bonding wire surfaces. Replace the jig sub-mold; due to the inversion of the cavity with the jig, the air passes outside; then, the environment, further, to simplify the assembly method and the pre-defined body chip bonding on the semiconductor package, implement the exhaust of the high-temperature mold. The first inner air of the through hole on the top surface is pumped to bake the cold body wafer. The electrical industry uses a packaging ball planting operation to obtain a plurality of molds on the jig. The air hole will increase suction to induce a suction.

16124.ptd 第8頁 584922 五、發明說明(5) ^基板叉而溫洪烤而產生過度熱應力時,子模頂面之吸力 i 2 1衡該熱應力’而能令各半導體晶片及承載基板皆 貼合於子模頂面,俾利烘烤冷卻後該基板以及封裝件 μ $ =白!I!維持良好之平面度而不會有翹曲、脫層甚至晶 右‘ J11况發生。同時,基板具備優良平面度亦可令所 有銲球準確對位錯4 M ^ β .,鲜接於對應之基板位置上而能進一步增進 植球作業及測試階段之品質信賴性。 次之G俨3:上述子模係-可抽換式機構,&當前後批 度及厚度改變或晶片大小、厚 片選用適合子模抽換即可。此上 同時配備多種價日二^卩之繁瑣製程,亦毋須按封裝對象 增加量產以:;;:;:故能顯著縮短封裳時程及成本, 付口市場所需。 【發明詳細說明】·· 現即以實施例配合圖 半導體封裝件之t A # Z、、、田說明本發明球柵陣列 圖俱為簡化之示二應::製法之新穎治具。惟以下各 内容,盆會的r式’係繪示與本發明製法右關之开杜 二二:’際封裳製程所涵蓋之元件數#有關之70件 件間之Τ結關係勢必更為複雜。 里、元件佈局及元 業流=用以顯示本實施例之各程V步體驟封襄件製法之作 10且右,如第1A圖所示,準備一矩陣式其4 10具有一正面104及一相對之背面1〇5, 2板10,該基板 π割線1 0 0於該16124.ptd Page 8 584922 V. Description of the invention (5) ^ When the substrate is fork-heated and warm-baked and excessive thermal stress is generated, the suction force i 2 of the top surface of the sub-mold is equal to the thermal stress, which can enable each semiconductor wafer and load The substrates are all attached to the top surface of the sub-mold. After the bake and cooling, the substrate and the package μ $ = white! I! Maintain a good flatness without warping, delamination or even crystal right J11. At the same time, the excellent flatness of the substrate can also allow all solder balls to be accurately misaligned by 4 M ^ β. Freshly connected to the corresponding substrate position can further improve the quality reliability of the ball-planting operation and test stage. Second G 俨 3: The above-mentioned sub-mold system-removable mechanism, & current batch and thickness changes or wafer size, thick pieces can be selected for sub-mold replacement. At the same time, it is equipped with a variety of tedious manufacturing processes that cost two days at a time, and there is no need to increase mass production according to the packaging target to: ;;:;: It can significantly shorten the time and cost of sealing clothes, and meet the needs of the market. [Detailed description of the invention] Now, the embodiment is used to illustrate the t A # Z ,,, and field of the semiconductor package. The ball grid array of the present invention is simplified and the second application is: a novel fixture of the manufacturing method. However, in the following contents, the "r-style" of the basin meeting shows the opening of the right part of the method of the present invention: "The number of components covered by the process of the international seal # process # related 70-piece relationship is bound to be even more complex. Lane, component layout, and element flow = Used to show the work of the V step body sealing method of each step of this embodiment 10 and right, as shown in Figure 1A, prepare a matrix type 4 4 with a front 104 And an opposite back surface 105, 2 plate 10, the substrate π secant 1 0 0 in the

584922 五、發明說明(6) ^~ 基板正面1 0 4上預先定義出行列列置之複數個基板單元 1〇1,本實施例概以2 X 6行列配置具有十二個基板單元之 矩陣式基板1 0例釋之。每一基板單元i 〇丨上係預設有一提 供晶片接置之晶片黏置區1 〇 2,其外並環設一供多條導電 跡線(未圖式)佈設之導電連接區丨〇3,使該等導電跡線 穿越基板10内部多數貫穿通孔(Vias)(未圖式)而電性 連接至基板10背面105之多數銲墊(未圖式)上。本實施 例適用之矩陣式基板10可為環氧樹脂、玻璃纖維、聚亞醯 胺樹脂或FR-4樹脂等塑膠材質或陶瓷、玻璃材料等製成, 惟塑膠材質基板因具有價格低廉及良好加工性等優勢而漸 居市場主流地位。 之後,如第1B圖所示,製妥複數片各具一第一表面 1 1 0及第二表面1 1 1之半導體晶片i J,並於各晶片黏置區 10 2内佈覆一熱接合性膠黏劑12以供各晶片丨丨第二表面^ 黏著至矩陣式基板1 〇上之後,將該載有晶片丨丨之矩陣式基 板1 0 (即封裝件半成品1)移入本發明提供之治具(如第 1 C圖1 3所示)内進行烘烤。 如第1C圖所示,該治具13係由一上模i3〇及與該上模 1 3 0夾固之一下模1 3 1所構成,該下模1 3 1内並設有一供一 子模1 4及多數晶片1 1安置之模穴1 3 2以及至少一連通該子 模1 4至外部排氣裝置(未圖式)之排氣通道1μ。其中, 該子模1 4係為一可抽換式裝置,其具有一平坦頂面1 4 〇及 複數個貫穿該子模1 4頂面1 4 0而與該模穴1 3 2相通之抽氣通 孔141,而5亥排氣通道133具有兩相對端,其中之一端係與584922 V. Description of the invention (6) ^ ~ A plurality of substrate units 10 are arranged on the front surface of the substrate 1 0 4 in advance. In this embodiment, a matrix formula with twelve substrate units is arranged in a 2 × 6 array. 10 substrates are explained. Each substrate unit i 〇 丨 is preset with a wafer bonding area 1 〇2 for providing wafer connection, and a conductive connection area for a plurality of conductive traces (not shown) is arranged on the outside. The conductive traces pass through most of the vias (not shown) inside the substrate 10 and are electrically connected to most of the bonding pads (not shown) on the back surface 105 of the substrate 10. The matrix substrate 10 suitable for this embodiment may be made of plastic materials such as epoxy resin, glass fiber, polyurethane resin or FR-4 resin, or ceramics, glass materials, etc. However, plastic substrates are inexpensive and good Processing and other advantages gradually occupy the mainstream market position. Thereafter, as shown in FIG. 1B, a plurality of semiconductor wafers i J each having a first surface 1 10 and a second surface 1 1 1 are prepared, and a thermal bonding is covered in each of the wafer adhesion regions 10 2. The adhesive 12 is used for each wafer. The second surface ^ is adhered to the matrix substrate 10, and then the matrix substrate 10 carrying the wafers (the semi-finished product 1 of the package) is moved into the package provided by the present invention. Bake in a jig (as shown in Figure 1C and Figure 13). As shown in FIG. 1C, the jig 13 is composed of an upper mold i30 and a lower mold 1 31 clamped to the upper mold 1 30. A mold for a child is provided in the lower mold 1 31. The mold cavity 14 and the plurality of wafers 11 are provided with a cavity 1 3 2 and at least one exhaust channel 1 μ that connects the sub mold 14 to an external exhaust device (not shown). Wherein, the sub-mold 14 is a replaceable device, which has a flat top surface 140 and a plurality of pumps which penetrate the sub-mold 14 top surface 1 40 and communicate with the cavity 1 32. The air vent hole 141 and the 5H exhaust passage 133 have two opposite ends, one of which is connected to

16124.ptd 第10頁 584922 五、發明說明(7) 该等抽氣通孔1 4 1通連,且另一端則開口於下模1 3 1之微型 閥門1 3 4 ( M i n i - Va 1 ve)並外接一如真空幫浦等排氣裝置 (未圖式)。待載有多數半導體晶片丨丨之基板丨〇置入該治 具1 3内並以倒置方式將晶片1 1第一表面1丨〇平貼該子模頂 面1 40夹固妥當後,即啟動排氣裝置令該微型閥門1 34開 啟,此時模穴132内空氣經貫穿頂面ι4〇之抽氣通孔^及 該排氣通道1 33排出治具! 3外而使模穴1 32内形成一負壓環 境,導致子模1 4於頂面1 4 〇處產生一反向吸力,·子模丨4頂 面1 4 0之吸力恰足以平衡基板丨〇受高溫烘烤時產生之過度16124.ptd Page 10 584922 V. Description of the invention (7) The exhaust vent holes 1 4 1 are connected, and the other end is opened in the miniature valve 1 3 1 of the miniature valve 1 3 4 (M ini-Va 1 ve ) And an external exhaust device (not shown) such as a vacuum pump. After the substrate carrying most semiconductor wafers 丨 is placed in the jig 1 3 and the wafer 1 1 first surface 1 1 is flatly attached to the top surface of the sub-mold 1 40, it will be started. The exhaust device opens the micro valve 1 34, and the air in the cavity 132 is exhausted from the jig through the exhaust through hole ^ through the top surface ^ 40 and the exhaust channel 1 33! 3 outside and a negative pressure environment is formed in the cavity 1 32, which causes the sub-mold 14 to generate a reverse suction at the top surface 14 0, the sub-mold 丨 4 the top surface 1 4 0 suction is just enough to balance the substrate 丨〇 Excessiveness caused by high temperature baking

熱應力,令各晶片1丨第一表面i丨〇平整貼合於子模丨4頂面 yo ’藉以避免烘烤完成之封裝件半成品發生翹曲、脫層 甚至晶片裂損等現象。 1〇所ΐ ί哲實?作業中前後批次之封裝半成品往往因基板 i = U或其承載之半導體晶片11種類差異而具 1 4表面、商Α^向度h ’為使晶片1 1第一表面1 1 0得與治具 丄4表面適當貼合,下握山 度h重行%輅+ ^模131之模八鬲度H必須配合半成品高 又η更订调整。本發明 應不同型態之封裝 ,、式子模1 4之七具1 3能適 裝半成口 士 Λ ^ σ口,如第1 D圖所示,當批次Α之封The thermal stress makes each wafer 1 丨 the first surface i 丨 〇 flat and fit on the top surface of the sub-mold yo 4 to avoid warping, delamination, and even wafer cracking of the packaged semi-finished product after baking. 1〇 What is it? The semi-finished packages of the previous and subsequent batches of the operation often have a surface of 4 and a quotient of ^^ h due to the difference in the substrate i = U or the type of semiconductor wafer 11 carried by it. The surface of 丄 4 is appropriately fitted, and the lower grip height h is repeated% 辂 + ^ 131 of the mold 鬲 鬲 H H must be adjusted according to the height of the semi-finished product and η. The present invention should be packaged in different types, and the seven molds 13 of the mold 14 can be fitted with a half-mouth mouth Λ ^ σ mouth, as shown in Figure 1 D, when the batch A is sealed

品之烘烤作業時,说4 丁下—批次(如批次B)半成 須更動治且i套,須抽換子模高度h’合適之子模1 4而毋 治具免除治具襄卸之繁項亦能大幅節省 經扭烤2袭時程縮短並增進量產產能。 壓回歸外界=氣3裝=;=排氣裝置使模穴132内 力Ρ Τ閉鎖閥門1 3 4將該封裝件半成When baking products, say 4 Ding—the batch (such as Batch B) must be modified and set i, and the mold height h 'must be changed to a suitable mold 1 4 without the fixture. Unloading the complicated items can also greatly save the time required for warp roasting and shorten the mass production time. Pressure return to the outside = 气 3 装 =; = Exhaust device makes the inner force of the cavity 132 PT lock valve 1 3 4 This package is half

584922 五、發明說明(8) 品1移出治具實施打線步驟(Wire Bonding)。如第ιέ圖 所示,以多數如金線等可導電之導線1 5分別銲接各半導體 晶片11之第一表面1 1 〇及基板1 〇,復施以模壓製程使該等 半導體晶片1 1及導線1 5完整包覆一封裝膠體1 6内而與外界 氣密隔離,即可續行植球作業。如第1 F圖所示,該矩陣式 基板1 0不會於因而溫供烤造成魅曲而保有良好平面度,遂 以自動對位方式將複數個呈陣列排列之銲球i 7回銲於基板 1 0背面之多數鮮塾10 6上時’每一鲜墊1〇6皆可與其相對麻 之銲球1 7對正銲結,不致有對位偏移或無法觸接之情況發 生’甚至進入測試階段後各銲球丨7底部亦能構成一平面^ 以供測試機台1 8内各觸點1 8 0精準地與待測銲球丨7導電觸 接。 最後實施切單步驟,參閱第丨八圖,將植球完成具有2 X 6行列配置之矩陣式基板丨〇沿預設分割線1 〇 〇切割成十二 個半導體封裝件(未圖式),即完成本發明之球栅陣列丰 導體封裝件製法。 ]牛 以上所述僅為本發明之實施例而已,並非用以限定本 發明之實質技術内容範圍。本發明之實質技術内容係定義 ;下这之申叫專利祀圍内’任何其他技術或方法係與下述 申請專利範圍相同或等效之變更,均將視為涵蓋此 圍中。 π〜祀584922 V. Description of the invention (8) Product 1 is removed from the jig for wire bonding. As shown in the figure, the first surface 1 1 0 and the substrate 10 of each semiconductor wafer 11 are respectively welded with a plurality of conductive wires 15 such as gold wires, and the semiconductor wafers 11 and 1 are repeatedly subjected to a molding process. The lead wire 15 is completely covered with an encapsulating gel 16 and air-tightly isolated from the outside, and the ball-planting operation can be continued. As shown in Figure 1F, the matrix substrate 10 will not maintain a good flatness due to the charm caused by warm baking, and then automatically repositions a plurality of solder balls i 7 arranged in an array by automatic alignment. When most of the freshness on the back of the substrate 10 is 10 6 'Each fresh pad 10 6 can be soldered to the opposite hemp solder ball 1 7 to prevent it from being misaligned or inaccessible'. After entering the test phase, the bottom of each solder ball 7 can also form a plane ^ for each contact 180 in the testing machine 18 to accurately and conductively contact the solder ball 7 to be tested. Finally, the singulation step is implemented. Referring to FIG. 丨, the planting ball is completed into a matrix substrate with a 2 × 6 row and column configuration, and cut into 12 semiconductor packages (not shown) along a preset dividing line 100. That is, the manufacturing method of the ball grid array abundant conductor package of the present invention is completed. The above description is only an embodiment of the present invention, and is not intended to limit the scope of the essential technical content of the present invention. The essential technical content of the present invention is the definition; the application below is called “Patent Offering” and any other technology or method that is the same as or equivalent to the scope of patent application described below will be deemed to be covered by this scope. π ~ worship

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584922 圖式簡單說明 【圖式簡單說明】: 第1 A至1 F圖係本發明球栅陣列半導體封裝件之製作流 程示意圖。 【主要元件符號】: 1 封 裝 半 成 品 10 矩 陣 式 基 板 100 分 割 線 101 基 板 單 元 102 晶 片 黏 置 區 103 導 線 連 接 區 104 基 板 正 面 105 基 板 背 面 106 銲 墊 11 半 導 體 晶 片 110 晶 片 第 一 表 面 111 晶 片 第 二 表 面 12 熱 接 合 性 膠 黏 劑 13 治 具 130 上 模 131 下 模 132 模 穴 133 排 氣 通 道 134 惟 形 閥 門 14 子 模 140 子 模 頂 面 141 抽 氣 通 孔 15 導 線 16 封 裝 膠 體 17 銲 球 18 測 試 機 台 180 測 試 觸 點 Η 下 模 模 穴 度 h 封 裝 半 成 品 1¾ 度 h, 子 模 度584922 Schematic description [Schematic description]: Figures 1 A to 1 F are schematic diagrams of the manufacturing process of the ball grid array semiconductor package of the present invention. [Symbols of main components]: 1 Package semi-finished product 10 Matrix substrate 100 Dividing line 101 Substrate unit 102 Wafer bonding area 103 Wire connection area 104 Front surface of substrate 105 Back surface of substrate 106 Solder pad 11 Semiconductor wafer 110 First surface of wafer 111 Second surface of wafer 12 Thermal bonding adhesive 13 Fixture 130 Upper mold 131 Lower mold 132 Cavity 133 Exhaust channel 134 Void valve 14 Sub-mold 140 Sub-mold top surface 141 Exhaust through hole 15 Wire 16 Encapsulated gel 17 Solder ball 18 Test Machine 180 test contactΗ Cavity degree of lower mold h Package semi-finished product 1¾ degree h, sub mold degree

16124.ptd 第13頁16124.ptd Page 13

Claims (1)

584922 六、申請專利範圍 1 · 一種半導體封裝件製法,係包含以下步驟: 備一晶片承載件,其具有一正面及一背面,於該 正面上預先定義有複數個基板單元,以供一膠黏劑塗 佈藉以黏著複數片半導體晶片至各基板單元上; 將該晶片承載件夾固於一治具中,其中,該治具 係,有一子模及至少一連通該子模至外部排氣裝置之 排氣通道,以供上片烘烤時該治具内空氣透過該子模 經排氣通道排除而令治具内形成一負壓環境; 以多數第一導電元件電性導接各半導體晶片至該 a 曰曰片承載件上; 用一封裝膠體包覆該等半導體晶片及多數導電元 件; 7多數第二導電元件植設於該晶片承載件之背面 上;以及 對該晶片承載件施以切單作業俾形成複數個半導 體封裝件。 2· ίΐϊ專利範圍第1項之半導體封裳件製法,其中,該 、i «封裝件係一球柵陣列(BaU Grid Array,BGA )半導體封裝件。 3·::::利範圍第1項之半導體封裝件製法,其中,該 日日片承載件係一矩陣式基板。 4. 圍第1項之半導體封裝件製法,其中,該 膠黏劑係一熱接合性膠黏劑。 5. 如申請專利範圍第!項之半導體封裝件製法,其中,該584922 6. Scope of patent application 1. A method for manufacturing a semiconductor package includes the following steps: A wafer carrier is prepared, which has a front surface and a back surface. A plurality of substrate units are defined on the front surface for bonding. The agent is applied to adhere a plurality of semiconductor wafers to each substrate unit; the wafer carrier is clamped in a jig, wherein the jig system has a sub-die and at least one communicating with the sub-die to an external exhaust device An exhaust channel for the air in the jig to pass through the sub-die and be eliminated by the exhaust channel when the wafer is baked, so that a negative pressure environment is formed in the jig; most of the first conductive elements are electrically connected to the semiconductor wafers To the a chip carrier; encapsulating the semiconductor wafer and most conductive elements with an encapsulating gel; 7 most of the second conductive elements are planted on the back of the wafer carrier; and applying the wafer carrier Singulation operation: forming a plurality of semiconductor packages. 2. The method for manufacturing a semiconductor package according to item 1 of the patent, wherein the package is a BaU Grid Array (BGA) semiconductor package. 3 ::::: The semiconductor package manufacturing method according to the first item, wherein the Japanese-Japanese wafer carrier is a matrix substrate. 4. The method for manufacturing a semiconductor package according to item 1, wherein the adhesive is a heat-bonding adhesive. 5. Such as the scope of patent application! Item of the method of manufacturing a semiconductor package, wherein the 584922 τ請專利範圍 治具係由一上模及一下模所構成,且該下模内並% /供該子模及該等晶片安置之模穴。 、叹有 如申請專利範圍第1項之半導體封裝件製法,其 子模係一可抽換式裝置,以按不同半導體封裝件’該 適當高度之子模。 千31擇 如申請專利範圍第1項之半導體封裝件製法,其 子模具有一頂面及複數個貫穿該頂面而與治具内’〜 通之抽氣通孔。 句相 如申請專利範圍第1或7項之半導體封裝件製法, 束$晶片承載件係採倒置方式夹固於治具内,令 丰導體晶片平貼於該子模之頂面上。 早7各 .如2專利範圍第⑷項之半導體封裝件製法 該排氣通道具有二相對端,装 ..^ ^ Τ 抽氣诵7丨^ ^ ^其中之一端係連通該等 Val ’另一端則開口於一微型閥門(Mini - i n ^ )而外接該外部排氣裝置。 項之半導體封裝件製法 守電疋件係金線。 如申請專利範圍第1頊 I道 土二導電元件係銲球半導體封裝件製法 —種烤使用之夾固裝置,係包括: —可於該上模办 穴; 供爽固之下模,該下模内並設有 子模,係收納於該模穴内;以及 6 . 8· 1· 12 其中,該 其中,該 模584922 τ Please patent scope The fixture is composed of an upper mold and a lower mold, and the lower mold is not provided with a mold cavity for the sub mold and the wafers. Sigh, as in the method of manufacturing a semiconductor package in item 1 of the patent application, the sub-mold is a replaceable device to sub-molds of the appropriate height according to the different semiconductor packages. The method of manufacturing the semiconductor package according to item 1 of the patent application range includes a top surface of the mold and a plurality of exhaust holes through which the top surface passes through the top surface of the fixture. Sentence As in the method for manufacturing a semiconductor package according to item 1 or 7 of the scope of patent application, the bundle wafer carrier is clamped in the fixture in an inverted manner, so that the conductor wafer is flat on the top surface of the sub-mold. Early 7 each. For example, the method of manufacturing the semiconductor package of item 2 of the patent range 2 The exhaust channel has two opposite ends, and the device is equipped with ^^ T. One of the ends is connected to the other end of the Val ' It is opened in a miniature valve (Mini-in ^) and externally connected to the external exhaust device. The semiconductor package manufacturing method of this item is a gold wire. For example, the scope of the patent application No. 1 顼 I soil two conductive elements is a method of manufacturing solder ball semiconductor packages-a clamping device for baking, which includes:-can be used in the upper mold; for lower solid mold, the lower There is a sub-mold inside the mold, which is housed in the cavity; and 6. 8 · 1 · 12 584922 六、申請專利範圍 至少一排氣通道,係開設於該下模内部,用以連 通該子模至一外部排氣裝置,俾令該模穴内空氣由子 模經該排氣通道排出而使該模穴内形成一負壓環境。 13. 如申請專利範圍第12項之夾固裝置,其中,該夾固裝 置係一治具。 14. 如申請專利範圍第12項之夾固裝置,其中,該子模係 一可抽換式裝置。 15. 如申請專利範圍第12項之夾固裝置,其中,該子模具 有一頂面及複數個貫穿該頂面並與該模穴相通之抽氣 通孔。 16. 如申請專利範圍第12或15項之夾固裝置,其中,該排 氣通道具有兩相對端,其中之一端係與該等抽氣通孔 連通,而另一端則開口於一微型閥門(Mini-Valve ) 而外接該外部排氣裝置。 17. 如申請專利範圍第12項之夾固裝置,其中,該外部排 氣裝置係一真空幫浦。584922 6. The scope of patent application is at least one exhaust channel, which is opened inside the lower mold to connect the sub-mold to an external exhaust device. The air in the cavity is discharged from the sub-mold through the exhaust channel to make the A negative pressure environment is formed in the cavity. 13. The clamping device according to item 12 of the patent application scope, wherein the clamping device is a jig. 14. For the clamping device of the scope of application for item 12, wherein the sub-mold is a replaceable device. 15. The clamping device according to item 12 of the patent application scope, wherein the sub-mold has a top surface and a plurality of air-venting through holes penetrating the top surface and communicating with the cavity. 16. For a clamping device with the scope of patent application No. 12 or 15, wherein the exhaust channel has two opposite ends, one of which is in communication with the exhaust through holes, and the other end is opened in a miniature valve ( Mini-Valve) and the external exhaust device. 17. The clamping device according to item 12 of the patent application, wherein the external exhaust device is a vacuum pump. 16124.ptd 第16頁16124.ptd Page 16
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI386659B (en) * 2009-01-09 2013-02-21 King Yuan Electronics Co Ltd Auto site mapping method and apparatus
CN113276348A (en) * 2020-02-19 2021-08-20 长鑫存储技术有限公司 Injection mold and injection molding method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI386659B (en) * 2009-01-09 2013-02-21 King Yuan Electronics Co Ltd Auto site mapping method and apparatus
CN113276348A (en) * 2020-02-19 2021-08-20 长鑫存储技术有限公司 Injection mold and injection molding method
US11820058B2 (en) 2020-02-19 2023-11-21 Changxin Memory Technologies, Inc. Injection mould and injection moulding method

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