JP2001223229A - Resin molding method, metal mold for molding and wiring base material - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a resin molding method, where the unsatisfactory state of a semiconductor package due to a float of a wiring base material confined in a metal mold from the surface of the metal mold is effectively prevented, and the semiconductor package favorable both in the internal manner and in a the visual appearance manner can be manufactured at a high yield, in transfer molding technique where a plurality of semiconductor elements are bonded to one surface of the wiring base material and these elements are housed in a single cavity to resin-seal the elements in one lump, the metal mold for molding and the wiring base material. SOLUTION: A hole 45 for suction is proved in a bottom force 22 and grooves for suction are provided in the rear of a wiring base material 11. These grooves are coupled with each other to vacuum suck semiconductor elements, and the value of a negative pressure to act on the rear the base material 11 is set higher than the value of a negative pressure to act on the surface of the base material 11.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin molding method, a mold for molding, and a wiring substrate, and a method for bonding a plurality of semiconductor elements to one surface of a single wiring substrate. In a single cavity, and collectively sealing with resin.

[0002]

2. Description of the Related Art At present, transfer molding is most widely used as a resin sealing method for semiconductor elements, and semiconductors bonded to a wiring base such as a substrate type or a tape type in a cavity of a mold are provided. In this method, a semiconductor element is sealed with a resin by disposing the element and filling the cavity by pressurizing a molten resin with a plunger. As a method of bonding semiconductor elements (semiconductor chips) for a plurality of semiconductor packages to one wiring base material in a matrix and sealing them with a resin, there are an individual sealing method and a collective sealing method. While the individual sealing method was being implemented, a batch sealing method was developed for the purpose of improving productivity and eventually reducing costs. At present, the batch encapsulation method is more excellent in cost and productivity.

In the individual sealing method, a semiconductor element for one semiconductor package and a semiconductor element for another semiconductor package are separately housed in different cavities and individually sealed with a resin. Therefore, in the individual sealing method, the side surface of the sealing resin is molded by a mold, and the sealing resin is independent for each package from the time of the sealing step. Therefore, in order to separate the package after the sealing process,
It is not necessary to cut the sealing resin, and if a wiring layer, a solder resist layer, and the like exist on the wiring base material and the cutting line, it is only necessary to cut those layers. On the other hand, the batch encapsulation method uses semiconductor elements for a plurality of semiconductor packages,
This is a method of enclosing in a single cavity and encapsulating the resin collectively. In the collective sealing method, the sealing resin becomes an integrated flat plate that includes semiconductor elements for a plurality of semiconductor packages. This may be called a package panel. Thereafter, package dicing for separating the package panel into individual pieces is performed to obtain individual semiconductor packages. Therefore, the side surface of the semiconductor package manufactured by the collective sealing method is formed as a cut surface by dicing, instead of being formed by a mold as in the individual sealing method.

A conventional example of a semiconductor device manufacturing method, a resin molding method, a resin molding device, a molding die, and a wiring base material by a package sealing method will be described below with reference to FIG. When performing transfer molding,
There are cases where a release film is used and cases where it is not used. FIG. 8 is a cross-sectional view of each step of a mold 120 using a conventional release film.

First, the configuration of the mold 120 and a resin molding device (not shown) will be described. As shown in FIG. 8, a conventional mold 120 includes an upper mold 121 and a lower mold 122. The upper mold 121 and the lower mold 122 in the mold 120 are each composed of several blocks. The upper die 121 has an upper die center block 24. Lower mold 12
2 has a lower mold center block 25 and a wiring base material mounting block 142. The lower mold center block 25 has a resin 2
6 is provided. A resin 26 is loaded into the pot 27, and a plunger 28 for applying a pressure to the resin 26 is inserted. On the other hand, the upper die center block 24 is provided with a cull 29 at a position facing the pot 27. On both sides of the cull 29, runners 30 serving as flow paths for flowing the molten resin 26 into the cavity 23a are formed.

On each side of the center block, the upper die 121 forms a cavity 23a.
The cavity 23a is for enclosing the semiconductor element 12 bonded on the wiring substrate 111, receiving a filling of the resin, and molding a sealing resin covering the semiconductor element 12. Runners 30 formed on both sides of the cull 29 are connected to the side of the cavity 23a on the upper mold block 24 side. On the side opposite to the side of the cavity 23a to which the runner 30 is connected, an air vent 146 for releasing gas (air) in the cavity 23a at the time of filling the resin is provided. The air vent 146 is formed by a streak-shaped groove formed on the clamp surface of the upper die 121. At a position facing the cavity 23a, the lower mold 12
2 forms a cavity 23b. Cavity 23
b is for accommodating the wiring substrate 111. Mold 1
Reference numeral 20 denotes a cavity for sealing the wiring base 111 and the semiconductor element 12 by the cavity 23a and the cavity 23b.

The wiring base mounting block 142 is a portion where the wiring base 111 is mounted. The wiring base mounting block 142 is formed lower than the surrounding blocks to form the cavity 23b for housing the wiring base 111. The wiring base mounting block 142 is vertically movably supported by a floating mechanism using a spring 43, and the vertical movement can change the depth of the cavity 23b. Such a floating mechanism is required when a wiring board 111 of a substrate type having a relatively uneven thickness is used as the wiring base 111 of the semiconductor package. This is because when the floating mechanism is not used, the depth of the cavity 23b is constant. Then, when a substrate having a relatively uneven thickness is mounted on the wiring base material mounting block 142, the position on the surface of the substrate is uneven. A substrate thicker than the depth of the cavity 23b is placed in the cavity 23b,
This is because, in the case of clamping at 21 and 122, there is a disadvantage that an excessive clamping pressure is generated and the substrate is damaged. On the other hand, a substrate thinner than the depth of the cavity 23b is arranged in the cavity 23b, and the upper and lower dies 121, 1
This is because, in the case of clamping at 22, the gap is generated due to insufficient clamping, and the resin leaks out. Such a disadvantage is solved by adopting a floating mechanism. However, when a tape material is used as the wiring substrate 111, such a floating mechanism is not required. This is because the tape material is thin and has a small variation in thickness as compared with the substrate type, so that the above-described inconvenience does not occur even if the floating mechanism is not used.

The upper die 121 has a suction hole 44 for sucking the release film by vacuum. The suction hole 44 has an opening 44a on the surface of the cavity 23a or the like, and is connected to a vacuum source (not shown) outside the mold 120. In a mold that does not use a release film, the suction hole 44 is not required.

The resin molding apparatus equipped with the mold 120 includes an upper base (not shown) for supporting the upper mold 121,
A lower base (not shown) for supporting the lower mold 122;
20; a heater (not shown) for heating 20; a vacuum pump (not shown) serving as the above-mentioned vacuum source; a mold clamping mechanism (not shown); an injection mechanism (not shown); Is provided. The upper and lower dies 121 and 122 are fixed to the upper and lower bases using plates, bolts (not shown), and the like. The upper base or the lower base is configured to be able to move up and down by a mold clamping mechanism to open and close the mold 120.

Next, with reference to FIG. 8, a description will be given of a resin molding method of a semiconductor device or a method of manufacturing a semiconductor device by a conventional package sealing method.

[Bonding Step] A bonding step is performed as a step before the resin molding step. In the bonding step, the semiconductor elements 12 for a plurality of semiconductor packages are
Are arranged and mounted on a matrix on the main surface of one wiring substrate 111. The internal connection of the wiring is performed by a wire bonding technique or the like. FIG. 8 shows a state in which the semiconductor elements 12 are internally connected by bonding wires 16 as an example. In addition, there is a wireless bonding method for connecting the semiconductor elements 12 using metal bumps for internal connection.

[Step before mold clamping (FIG. 8A)] Next, a resin molding step is performed. First, the process before mold clamping is shown in FIG.
This will be described with reference to FIG. The wiring base 111 is mounted on the wiring base mounting block 142 of the lower mold 122. Also,
Cavity 23a and cull 29 of upper mold 121, runner 3
The release film 41 is arranged so as to cover the inner surface of the upper die 121 while vacuum-absorbing the release film 41 on the surface of the cavity 23a. At this time, the opening 44 a of the suction hole 44 is closed by the release film 41. However, since the release film 41 has a property of allowing gas to permeate, some gas (air) permeating the release film 41 is continuously sucked into the suction holes 44. Therefore, the release film 41 does not completely block the flow of gas to the suction holes 44. Note that the release film 41 is for facilitating the release of the resin 26.
When the release film 41 is not used, a method is used in which a pin is arranged in the mold portion, and the pin is pressed by an eject mechanism to release the mold. The agent is used regularly to make the release more reliable.

The wiring substrate 111 and the release film 41
Is heated by contacting the mold 120 which has been heated in advance by a heater (not shown). Wiring substrate 1
Since 11 is heated from the back surface, immediately after being mounted on the wiring base material mounting block, a larger thermal expansion may occur on the back surface side, and warpage may occur as a whole. The warpage of the wiring substrate 111 decreases as the thermal equilibrium heat progresses. Therefore, it is necessary to wait for the resin filling at least until the undesired warpage disappears. Next, the lower mold 122
Resin 26 (resin tablet) in the pot 27
Is loaded.

[Mold Clamping (FIG. 8B)] Then, the upper mold 121 and the lower mold 122 are joined by operating the resin mold apparatus, and the mold 120 is clamped. At this time, the wiring substrate 11
The outer edge portion 1 is sandwiched and clamped by the upper die 121 and the lower die 122. The region where the semiconductor elements 12 are arranged at the center of the wiring substrate 111 is confined in the cavity 23a without being directly clamped.

[Resin injection / filling (FIG. 8C)
(D))] Next, the resin 26 is melted, and the melted resin 2 is melted.
6 is injected by being pushed up by the plunger 28, flows into the cavity 23 a through the cull 29 and the runner 30, and the resin 26 is filled in the mold 120. Gas (air) existing in cavity 23a before inflow of resin 26
Is pushed forward of the resin flow according to the inflow of the resin 26, and is discharged from the air vent 146.

[Resin Curing] As the resin 26, a thermosetting resin is used. After filling the resin 26 into the mold 120,
The resin 26 is baked and cured. The package panel is completed by the above steps. Thereafter, the mold 120 is opened, the package panel is taken out, and the release film 41 is released from the package panel. [External Terminal Formation] Next, when external terminals need to be formed, they are sent to an external terminal formation step. When a BGA package is produced, solder balls are attached to the back surface of the wiring substrate 111 and used as external terminals. [Package Dicing] Next, a package dicing step is performed. Package dicing is performed using a dicing device (not shown) that performs abrasive grain cutting by rotating a circular blade. The package panel is cut by a circular blade and singulated into individual semiconductor packages. In this way, a plurality of semiconductor packages can be obtained from one package panel. The side surface of each semiconductor package is formed as a cut surface by a circular blade.

[0017]

In the above prior art,
There were the following problems. As shown in FIG. 8B, the mold 120 is clamped, and when the wiring base 111 is confined in the mold 120, the negative pressure of the suction holes 44 penetrates through the release film 41 and passes through the release base 41. 111, the wiring substrate 111 is drawn toward the upper die 121, and the wiring substrate 11
A phenomenon occurs in which the central portion of the substrate 1 rises from the surface of the wiring substrate mounting block 142. In some cases, the highest portion, such as the loop portion of the bonding wire 16, comes into contact with the release film 41 when the central portion of the wiring base material 111 rises (this case is referred to as mode 1). FIG.
As shown in (c), the melted resin 26 is supplied to the cavity 23.
When press-fitting into the inside a, the resin inflow end portion of the wiring base material 111 is lifted up. In some cases, the highest portion of the bonding wire 16 such as the loop portion contacts the release film 41 (this case is referred to as mode 2). According to the verification of the present inventor, the wiring base material 1
It has been confirmed that when the substrate 11 is a substrate type, contact in the former (mode 1) mode mainly occurs, and when the wiring substrate 111 is a tape type, the contact in the latter (mode 2) mode mainly occurs. ing.

When such contact with the release film 41 occurs, stress is applied to the bonding wires 16 and the like, causing a problem that undesired deformation occurs. Further, a contact mark remains on the release film 41, and if resin sealing is performed as it is, an appearance defect occurs in which the contact mark of the release film 41 is transferred to the resin surface of the semiconductor package. A semiconductor package having such an appearance defect must be removed from a production line as a defective product in an appearance inspection. For example, in the semiconductor package in which the contact mark of the bonding wire 16 is transferred, as a result of misidentifying that the bonding wire is not exposed and is not properly sealed with a resin,
May be removed from the production line. Further, even if it can be recognized that the contact mark of the bonding wire 16 is transferred instead of the bonding wire 16 being exposed,
In such a semiconductor package, there is a high possibility that the bonding wire 16 has a defect inside the resin, so that there is a case where it is necessary to select to remove the semiconductor package from the production line. Further, there is a problem that a semiconductor package having a poor appearance even if it normally operates is difficult to be delivered to a customer as a product.

In order to prevent the substrate from being lifted, a method of vacuum-sucking the wiring substrate as in a resin molding apparatus disclosed in Japanese Patent Application Laid-Open No. 8-142106 is conceivable. However, even if the present inventor adopts the method of vacuum-suctioning the wiring base material, the negative pressure acting on the wiring base surface by the release film suction means is reduced by the negative pressure acting on the wiring base surface by the wiring base suction means. It has been found that, if it surpasses, the wiring substrate is lifted as in mode 1.
When the wiring base material 111 is a substrate type, the wiring base material mounting block 142 is operated in a floating state.
A certain gap must be provided between the wiring base material mounting block 142 and another block adjacent thereto. Such a gap causes a vacuum leak, and lowers the suction force on the back surface of the substrate. As a result, the wiring substrate rises as in Mode 1.

JP-A-8-142106 exemplifies an apparatus for resin-sealing a semiconductor element bonded to a substrate cut into individual pieces as described in paragraph 0016 of this publication. When a semiconductor element bonded to a substrate cut into pieces is resin-sealed, if a substrate around the semiconductor element is clamped and held, even if a differential pressure is generated between the front and back of the wiring base material by vacuum suction means, the semiconductor It does not move up and down as much as the element or the bonding wire comes into contact with the release film. That is, the above-described problem does not occur. The reason why the resin molding apparatus disclosed in Japanese Patent Application Laid-Open No. 8-142106 vacuum-adsorbs the wiring base material is presumed to be for mounting the wiring base material on the upper mold before clamping, and after the clamping. Does not describe holding the wiring base material. Therefore, Japanese Patent Application Laid-Open No. 8-142106 discloses means or clues for solving the above-mentioned problem in a technique of bonding semiconductor elements for a plurality of semiconductor packages to one wiring base material and sealing them together as in the present application. The above problem cannot be solved. Also, even when the substrate is cut into individual pieces and the semiconductor elements of a plurality of semiconductor packages are bonded to a single wiring base material by resin sealing, if the individual sealing method is adopted, Since the substrate can be clamped between the cavities, the above-described problem does not occur.

The present invention has been made in view of the above-mentioned problems in the prior art, and a plurality of semiconductor elements are bonded to one surface of a single wiring base, and these semiconductor elements are placed in a single cavity. In the transfer molding technology, which collects and encapsulates the resin in one package, it effectively prevents problems caused by the floating of the wiring base material confined in the mold from the mold surface, and improves the internal and external appearance. It is an object of the present invention to provide a resin molding method, a molding die, and a wiring base material capable of manufacturing a good semiconductor package with high yield.

[0022]

[Means for Solving the Problems]

[0023] The first invention of the present application for solving the above problems is as follows.
A tape-shaped or plate-shaped wiring substrate in which semiconductor elements for a plurality of semiconductor packages are bonded on the surface of the wiring substrate mounting surface provided on one of the upper mold and the lower mold of the mold for molding. And clamping the edge of the wiring base material with an upper die and a lower die while closing the semiconductor element in a single cavity, and filling the cavity with a resin. A resin molding method, wherein a pressure value acting on the surface of the wiring base material is set higher than a pressure value acting on the back surface of the wiring base material when the molding die is in a closed state.

Therefore, according to the resin molding method of the first invention of the present application, when the mold for molding is in a closed state, the pressure value acting on the surface of the wiring base is applied to the back surface of the wiring base. Since the pressure is set higher than the pressure value, the wiring base material confined in the mold does not rise from the mold surface, and the highest portion such as the loop portion of the bonding wire contacts the release film. There is nothing. As a result, there is an advantage that a component attached to the surface of the wiring base material such as a bonding wire is not damaged by contact and a resin package having a good appearance can be obtained. In addition, as a tape-shaped wiring base material, a tape carrier (film carrier) in which a wiring pattern made of a metal foil such as a copper foil is provided on an insulating film such as a polyimide film is applicable. As the plate-shaped wiring base material, a wiring substrate in which a wiring pattern made of a metal foil such as a copper foil is provided on an insulating substrate such as a glass / epoxy plate is applicable.

[0025] The second invention of the present application for solving the above problems is as follows.
The upper mold and the lower mold of the mold are provided with suction holes which are opened on the cavity surface, the suction holes are connected to a vacuum source, and the release film is sucked into one of the upper mold and the lower mold. The other die is vacuum-sucked, and the other die is vacuumed by suctioning the back surface of a tape-shaped or plate-shaped wiring base having semiconductor elements for a plurality of semiconductor packages bonded to the surface using the suction holes. Attach and clamp the mold to clamp the edge of the wiring base material with the upper mold and the lower mold, enclose the semiconductor element in a single cavity, and fill the cavity with resin. A resin molding method, wherein a negative pressure value acting on the back surface of the wiring base material is set to be larger than a negative pressure value acting on the front surface of the wiring base material when the tool is in a closed state.

Therefore, according to the resin molding method of the second invention of the present application, when the mold for molding is in the closed state, the negative pressure value acting on the back surface of the wiring base acts on the surface of the wiring base. Since the pressure is set higher than the negative pressure value, the wiring substrate confined in the mold does not rise from the mold surface, and the components attached to the wiring substrate surface such as bonding wires come into contact with the release film. There is no. As a result, there is an advantage that a component attached to the surface of the wiring base material such as a bonding wire is not damaged by contact and a resin package having a good appearance can be obtained.

In the third invention of the present application, the upper and lower dies for molding are provided with suction holes opened on the surface of the cavity, and the suction holes are connected to a vacuum source. A tape-shaped or plate-shaped wiring substrate in which a release film is sucked into one of the molds through the suction holes to be vacuum-sucked, and the other mold has a surface to which semiconductor elements for a plurality of semiconductor packages are bonded. The back surface of the wiring substrate is sucked by the suction hole and vacuum-sucked, and the edge of the wiring base material is clamped by the upper die and the lower die, and the semiconductor element is confined in a single cavity. When filling the cavity with the resin, when the mold is closed, the negative pressure value of one vacuum source for sucking the wiring base is reduced by the negative pressure of another vacuum source for sucking the release film. Set higher than pressure value It is a resin molding method according to claim.

Since it is not easy to detect the negative pressure value acting on the front and back of the wiring substrate, it is a simple solution to detect and control the negative pressure value of the vacuum source. By setting the negative pressure value of one vacuum source for sucking the wiring base material higher than the negative pressure value of another vacuum source for sucking the release film, the wiring base material confined in the mold is set by the present inventor. Was not lifted from the mold surface, and it was confirmed that components attached to the wiring base material surface such as bonding wires did not come into contact with the release film. Therefore, according to the resin molding method of the third invention of the present application, there is an advantage that a component attached to the surface of the wiring base material such as a bonding wire is not damaged by contact and a resin package having a good appearance can be obtained. .

In the fourth invention of the present application, the upper and lower dies for molding are provided with suction holes opened on the surface of the cavity, and the suction holes are connected to a vacuum source. A tape-shaped or plate-shaped wiring substrate in which a release film is sucked into one of the molds through the suction holes to be vacuum-sucked, and the other mold has a surface to which semiconductor elements for a plurality of semiconductor packages are bonded. The back surface of the wiring substrate is sucked by the suction hole and vacuum-sucked, and the edge of the wiring base material is clamped by the upper die and the lower die, and the semiconductor element is confined in a single cavity. When filling the cavity with the resin, a valve provided in a flow path for sucking the wiring base material when the mold for molding is in a closed state, the valve being closest to the mold along this flow path. The negative pressure value at the valve A resin molding method characterized in that a valve provided in a flow path for sucking the lease film is set larger than the negative pressure value at the most recent valve mold along the flow path.

Since it is not easy to detect the negative pressure value acting on the front and back of the wiring base material, it is a simple solution to detect and control the negative pressure value of the vacuum source. However, when the output of one vacuum source is distributed and the wiring base material and the release film are sucked, the vacuum source for sucking the wiring base material and the vacuum source for sucking the release film are the same. There is no point in detecting the pressure value. In addition, the negative pressure value of the valve provided in the flow path for sucking the wiring base material or the release film and the valve closest to the mold along these flow paths is smaller than the negative pressure value of the vacuum source. Can be said to be close to the effective value (a negative pressure value acting on the front and back of the wiring base material). By the present inventor, a valve provided in a flow path for sucking a wiring base material, and a negative pressure value at a valve closest to a mold along the flow path is provided in a flow path for sucking a release film. By setting the negative pressure value at the valve closest to the mold along this flow path to the valve, the wiring base material confined in the mold may rise from the mold surface. Without
It was confirmed that components attached to the surface of the wiring base such as bonding wires did not come into contact with the release film. Therefore, according to the resin molding method of the fourth invention of the present application, there is an advantage that a resin package having good appearance can be obtained without damaging parts attached to the surface of the wiring base such as bonding wires due to contact. .

Further, the fifth invention of the present application uses a mold for molding having an air hole opened on the surface of a cavity,
In the cavity of the molding die, a tape-shaped or plate-shaped wiring base material on which semiconductor elements for a plurality of semiconductor packages are bonded is placed on the surface, and the edge of the wiring base material is closed by clamping. The semiconductor element is confined in a single cavity while being clamped by an upper mold and a lower mold of the molding die, a gas is press-fitted into the cavity from the vent hole, and the pressure of the gas causes the wiring substrate to be closed. And filling the cavity with resin while pressing and supporting the cavity surface.

Therefore, according to the resin molding method of the fifth invention of the present application, a gas is press-fitted into the cavity from the vent hole, and the wiring substrate is pressed against the cavity surface by the pressure of the gas to support it. The wiring substrate confined in the mold does not rise from the surface of the mold, and components attached to the surface of the wiring substrate such as bonding wires do not come into contact with the release film. As a result, there is an advantage that a component attached to the surface of the wiring base material such as a bonding wire is not damaged by contact and a resin package having a good appearance can be obtained. Further, according to the resin molding method of the fifth invention of the present application, a gas is press-fitted into the cavity from the vent hole, and the pressure of the gas presses and supports the wiring base material against the cavity surface, thereby forming the cavity. Is filled with the resin, the resin flowing into the cavity also receives the pressure of the gas press-fitted into the cavity. There is an advantage that the resin pressure can be uniformly filled by this gas pressure.

As the vent, an existing air vent provided in a conventional mold can be used. Further, since a gas is pressed into the cavity and the wiring base is pressed against the cavity surface by the pressure of the gas to support the wiring base, it is not necessary to provide a suction hole as a means for supporting the wiring base in the wiring base mounting block. There is no. Therefore, the resin molding method of the fifth invention of the present application can be performed using the existing equipment.

According to a sixth aspect of the present invention, there is provided a resin molding method according to any one of the first to fifth aspects of the present invention, wherein the wiring base is a plate-shaped wiring base ( A wiring substrate), wherein the mold for molding is a mold for molding in which a wiring substrate mounting block is vertically movably supported by a floating mechanism.

Therefore, according to the resin molding method of the sixth aspect of the present invention, while maintaining the benefits of the floating mechanism, the disadvantage caused by the vacuum leakage caused by the adoption of the floating mechanism is eliminated by the second aspect of the present invention. There is an advantage that the invention can be solved by the technical means of any one of the fifth inventions of the present application.

When the wiring base material is of a substrate type, the wiring base mounting block is operated in a floating manner.
A certain gap must be provided between the wiring substrate mounting block and another block adjacent thereto. Such a gap causes a vacuum leak, and lowers the suction force on the back surface of the substrate. As a result, there is a problem that the wiring base material is lifted as in mode 1. However, in any of the inventions of the second to fourth aspects of the present application, the pressure is adjusted so that the negative pressure acting on the back surface of the substrate is higher than the negative pressure acting on the surface of the substrate. Mode 1 caused by a vacuum leak from a gap between a material mounting block and another block adjacent to the material mounting block, which lowers the attraction force on the back surface of the substrate.
Of the substrate can be prevented from occurring. Further, according to the fifth aspect of the present invention, even if the suction groove as the means for supporting the wiring base is not provided in the wiring base mounting block, the wiring base is formed on the surface of the cavity by the pressure of the gas pressed into the cavity. , And a sufficient supporting force is obtained, so that no vacuum leak occurs fundamentally, and the above problem disappears.

According to a seventh aspect of the present invention, there is provided a tape-shaped or plate-shaped wiring base provided with a plurality of wiring base units for a single semiconductor package at predetermined intervals, and a surface of each of the wiring base units is provided. A suction hole having an opening in the wiring substrate mounting surface of one of the upper mold and the lower mold of the mold for molding, and the opening is formed of the wiring substrate. And formed so as to face a region outside the wiring base unit on the back surface of the wiring base unit, and to face the cavity of the other mold. Then, the back surface of the wiring base is placed on the wiring base mounting surface. Then, the suction hole is connected to a vacuum source, the suction hole is set to a negative pressure, and the wiring base material is suction-supported on the wiring base material mounting surface, and the die is clamped to close the edge of the wiring base material. Is clamped by the upper mold and the lower mold, and the semiconductor element is Confined within a cavity, a resin molding method characterized by filling the resin in the cavity.

When a suction hole is provided in the wiring base mounting block, a suction mark is left on the back surface of the wiring base. Therefore, if the opening of the suction hole is provided at a position where it comes into contact with the product portion to be an individual semiconductor package, the product will be damaged. However, according to the resin molding method of the seventh aspect of the present invention, since the opening of the suction hole is disposed so as to face a region outside the wiring base unit on the back surface of the wiring base, There is an advantage that such suction marks are not formed on the back surface of the wiring base unit, that is, on the back surface of the semiconductor package after commercialization. The opening of the suction hole is arranged so as to face the cavity of the other mold. This is because the wiring base material is not clamped within the cavity range, and there is a possibility that the wiring base material may be lifted. Therefore, by providing an opening at such a position, the floating of the wiring base material can be effectively suppressed.

According to an eighth aspect of the present invention, in the resin molding method according to the seventh aspect of the present invention, the opening is arranged so as to face a peripheral region of the wiring base material.

The peripheral region of the wiring substrate is a region around the arrangement region of the wiring substrate units in the entire region of the wiring substrate.
When configuring a tape-shaped or plate-shaped wiring base having a plurality of wiring base units for a single semiconductor package at predetermined intervals, the external dimensions of the wiring base are fixed, and the single wiring base is placed inside the wiring base. The wiring base units for one semiconductor package are laid out and designed in a matrix. Therefore, the layout differs depending on the external dimensions of the semiconductor package, and the region outside the wiring substrate unit in the arrangement area of the wiring substrate units also differs for each external dimension of the semiconductor package. Therefore, in the method of arranging the opening of the suction hole at a position facing the region outside the wiring base unit within the arrangement region of the wiring base unit, one mold is commonly used for various types of products (semiconductor packages). Designing for use is not easy. However, according to the resin molding method of the eighth invention of the present application, since the opening of the suction hole is arranged so as to face the peripheral region of the wiring base material, one mold can be used for various kinds of products (semiconductor packages). There is an advantage that it is easy to design so that they can be commonly used, and common manufacturing facilities can be achieved. In addition, since a relatively large number of openings can be provided in the peripheral region of the wiring base without restriction, a necessary number of openings can be provided according to the size of the wiring base, and sufficient supporting force can be obtained. Further, there is an advantage that the floating of the wiring base material can be effectively prevented.

However, in the case of a configuration in which the openings of the suction holes are arranged so as to face only the peripheral region of the wiring base material and the center part of the wiring base material is not directly supported by suction, if the wiring board becomes large to some extent, the wiring size becomes large. In some cases, the holding force for the central portion of the base material is limited. In such a case, there is a possibility that the wiring base material may be lifted up, and there may be a contact of a component attached to the surface of the wiring base material such as a bonding wire. Therefore, a ninth invention of the present application is the resin molding method of the seventh invention of the present application, wherein the opening is disposed so as to face a region between the wiring base units.

According to a tenth invention of the present application, in the resin molding method of the seventh invention of the present application, a plurality of the openings are provided, and some of the openings are arranged so as to face the wiring substrate peripheral region. The other opening is arranged so as to face the region between the wiring base units.

Therefore, according to the resin molding method of the ninth and tenth aspects of the present invention, since the opening of the suction hole is disposed so as to face the region between the wiring base units, the wiring is formed. The advantage is that the central part of the wiring base material is directly sucked and held in the region between the base material units, and the floating of the wiring base material can be effectively prevented even when a relatively large wiring base material is used. is there. In addition, the first
In the resin molding method according to the first aspect of the invention, a relatively large number of openings are provided in a peripheral region of the wiring base material, a relatively small number of openings are provided in a region between the wiring base units, and the arrangement of the small number of openings is devised. By doing so, it is possible to configure a mold having an optimal balance between holding the wiring base material and sharing the mold.
The eleventh invention of the present application, which is one example of such a device, will be disclosed below.

That is, the eleventh invention of the present application relates to a tape-shaped or plate-shaped wiring base provided with a plurality of wiring base units for a single semiconductor package at predetermined intervals, which is one of an upper die and a lower die. A mold for molding a plurality of semiconductor packages in a single cavity of the other mold, and the wiring base mounting surface of the one mold,
A suction hole having a plurality of openings is provided in a range opposed to the cavity of the other mold, some of which are arranged in a peripheral region of the wiring substrate mounting surface, and other openings are provided. A mold for molding, wherein the mold is arranged substantially on the center axis in the width direction or the longitudinal direction of the wiring base material mounting surface.

Therefore, according to the mold for molding of the eleventh invention of the present application, the opening is disposed substantially on the peripheral region of the wiring substrate mounting surface and substantially in the width direction or the longitudinal axis of the wiring substrate mounting surface. Therefore, the layout on the wiring base material can be set so that the same number of rows of wiring base units are arranged on both sides of the central axis. As a result, the rows of the wiring base units in the central axis direction can be set. There is an advantage that the mold can be advantageously shared with respect to the wiring base material having an even number.

Next, a mold for molding according to the twelfth invention of the present application, which is effective for performing the resin molding method of the seventh invention of the present application, will be disclosed. That is, the twelfth invention of the present application mounts a tape-shaped or plate-shaped wiring base provided with a plurality of wiring base units for a single semiconductor package at predetermined intervals on one of an upper mold and a lower mold, A mold for molding a plurality of semiconductor packages with a single cavity of the other mold, wherein the wiring mold mounting surface of the one mold is within a range facing the cavity of the other mold. A hole for suction having an opening is provided, and the position of the opening is in a region other than a region where the wiring base unit is mounted on the wiring base mounting surface, for molding. It is a mold.

Next, there will be disclosed an invention which is a more effective solution for achieving both the enhancement of the suction support force of the entire area of the wiring base material and the use of a common mold. The point is to provide a suction groove on the back surface of the wiring substrate.

That is, in the thirteenth invention of the present application, a suction groove is formed on the back surface of a tape-shaped or plate-shaped wiring substrate provided with a plurality of wiring substrate units for a single semiconductor package at predetermined intervals. The semiconductor element is bonded to the surface of the wiring base unit, and on the other hand, a suction hole having an opening on the wiring base mounting surface is formed in the mold for molding.
The opening is formed so as to face the suction groove, and then the back surface of the wiring base is placed on the wiring base mounting surface, the suction hole is connected to a vacuum source, and the vacuum source While the suction hole and the inside of the suction groove are negatively pressured and the wiring base material is suction-supported on the wiring base mounting surface, the mold is clamped to form an edge of the wiring base with an upper die and a lower die. And clamping the semiconductor element in a single cavity and filling the cavity with resin.

Therefore, according to the resin molding method of the thirteenth aspect of the present invention, the suction groove is formed on the back surface of the wiring base material, and the opening of the suction hole is formed so as to face the suction groove. Since the suction hole and the suction groove are connected to each other, and the inside of the suction hole and the suction groove are set to a negative pressure by the vacuum source connected to the suction hole, the suction is formed in the suction groove forming area on the back surface of the wiring substrate. There is an advantage that a force is generated, whereby the wiring substrate can be held on the wiring substrate mounting surface. Therefore, it is preferable to form the suction groove as uniformly as possible over the entire area of the wiring substrate. Further, since the suction hole and the suction groove face each other and the suction hole does not directly contact the back surface of the substrate, there is an advantage that no suction mark is formed on the back surface of the substrate. Furthermore, by forming the suction groove not only in the position facing the suction hole but also continuously in the other area on the back surface of the substrate from the position facing the suction hole, the suction groove is formed uniformly over the entire area of the substrate Thus, the attraction force on the entire surface of the substrate can be increased. Further, since the suction groove is formed in the wiring base material, the formation position of the suction groove can be set according to the pattern design of the wiring base unit arranged on the wiring base material. Also, by utilizing a region where the wiring base unit is not arranged, such as the peripheral portion of the wiring base, and extending the suction groove to a position common to various types of wiring bases, the suction hole is provided at such a position. A mold for molding having an opening can be commonly used for various types of wiring base materials. As a result, it is possible to achieve both the enhancement of the suction support force over the entire wiring base material and the common use of the mold.

A fourteenth invention of the present application is the resin molding method of the thirteenth invention of the present application, wherein the suction groove is formed in a region between the wiring base units.

Therefore, according to the resin molding method of the fourteenth aspect of the present invention, since the suction groove is formed in the area between the wiring base units, the suction groove is formed uniformly over the entire substrate, and the entire surface of the substrate is formed. There is an advantage that the attraction force can be increased. Further, since the area between the wiring base units, that is, the area that does not become a part of the semiconductor package at the time of the product is used as the suction groove forming area, there is a restriction on the design of the back surface of the wiring base unit such as external terminal formation. Absent.

According to a fifteenth invention of the present application, in the resin molding method of the thirteenth invention of the present application, the suction groove extends from a region between the wiring base units to a peripheral region of the wiring base, and Are disposed so as to face the wiring base material peripheral region.

Therefore, according to the resin molding method of the fifteenth aspect of the present invention, the opening of the suction hole is connected to the suction groove extending in the peripheral region of the wiring base material, and the inside of the arrangement region of the wiring base unit is arranged. Even if the suction hole is not set, the suction groove extended between the wiring base units generates the suction force,
There is an advantage that it is possible to achieve both the enhancement of the suction support force in the entire wiring base material and the common use of the mold.

The sixteenth invention of the present application relates to the thirteenth invention of the present application.
In the resin molding method of the present invention, the suction groove is formed continuously from a region between the wiring base units to a peripheral region of the wiring base, the plurality of openings are formed, and some of the openings are connected to a wiring base. It is arranged so as to face the material peripheral region, and another opening is arranged so as to face the region between the wiring base units.

When the size of the wiring board is increased to a certain extent, the vacuum degree of the suction groove extending near the center of the wiring base is only required to arrange the opening of the suction hole so as to face the peripheral area of the wiring base. Is reduced due to vacuum leakage (gas flowing into the vacuum chamber from the outside), and there is a possibility that a sufficient suction force cannot be exhibited. However, according to the resin molding method of the sixteenth invention of the present application, a plurality of openings of the suction holes are provided, some of which are arranged so as to face the peripheral region of the wiring base material, and the other openings are formed. Since it is arranged so as to face the region between the wiring base units, even when a relatively large wiring base is used, compared to a configuration in which the opening is arranged only in the wiring base peripheral region. In addition, there is an advantage that the degree of vacuum of the suction groove extending near the center of the wiring substrate can be maintained at a high level. Therefore, it is preferable to arrange one or more of the other openings so as to face the central part or the central region of the wiring substrate.

Further, the seventeenth invention of the present application is the thirteenth invention of the present application.
In the resin molding method of the invention, the suction groove is formed by selectively attaching a solder resist to the back surface of the wiring base material.

Therefore, according to the resin molding method of the seventeenth aspect of the present invention, the suction groove is formed as an unattached portion of the solder resist. A semiconductor package in which a conductive layer such as a wiring or an external terminal land is formed on the back surface of a wiring base material and the insulating layer is covered with a solder resist is widely used.
According to the resin molding method of the seventeenth aspect of the present invention, since the suction groove is formed by using the solder resist, no new material is required for forming the suction groove, and the manufacturing process is advantageous. And it can be implemented at low cost.

The eighteenth invention of the present application also relates to a wiring base material having a plurality of wiring base units for a single semiconductor package at predetermined intervals, wherein a solder resist is selectively provided on the back surface thereof, A wiring substrate, wherein a groove formed as an opening is formed continuously from a region between the wiring substrate units to a peripheral region of the wiring substrate.

Therefore, according to the wiring base material of the eighteenth aspect of the present invention, by utilizing the groove formed on the back surface as the suction groove as described above, the suction force is obtained over the entire area of the substrate, and the substrate is molded during resin molding. There is an advantage that a semiconductor package having good internal and external appearance can be manufactured with high yield.

[0060]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiment 1 Hereinafter, a resin molding method, a molding die, and a wiring substrate according to Embodiment 1 of the present invention will be described with reference to the drawings. The description includes the configuration of the wiring board 11, the configuration of the mold 20,
It is performed in the order of the resin molding device and the manufacturing process.

In this embodiment, a glass substrate is used as the wiring base material.
A wiring board 11 in which a wiring pattern made of a metal foil such as a copper foil is attached to an epoxy plate is employed. FIG. 1 is a front view (a) of a wiring board 11 according to an embodiment of the present invention, and a cross-sectional view (A) of FIG.
And a rear view (c).

FIG. 1B is a partially enlarged view. As shown in this partial enlarged view, the wiring board 1 in the present embodiment
1 includes an insulating substrate 51 made of glass epoxy, a copper wiring 53, and a solder resist 54. A through hole 52 is provided in the insulating substrate 51, and the front side and the back side of the insulating substrate 51
2 through. A copper wiring 53 is provided in a predetermined pattern on the front surface, the rear surface of the insulating substrate 51, and the inner surface of the through hole 52. Have been.

Except for the wire bonding portion 61 of the copper wiring 53, the solder resist 5
4. 1 (a) and 1 (b)
As shown in FIG.
Is bonded. That is, as shown in FIG. 1B, the semiconductor element 12 is mounted and bonded to the die bonding region on the front surface side of the wiring board 11 via the bonding material 56, and the electrodes (not shown) of the semiconductor element are formed by the bonding wires 16. And the wire bonding portion 61 of the copper wiring 53 are electrically connected.

On the other hand, the back surface of the wiring board 11
Are covered with the solder resist 54 except for the external terminal joining land 62 and the suction groove 63. The external terminal bonding lands 62 are formed by exposing the copper wirings 53 through the openings of the solder resist 54. The suction groove 63 is formed by exposing the insulating substrate 51 through the opening of the solder resist 54. That is, the suction groove 6
Reference numeral 3 denotes a groove whose bottom is the back surface of the insulating substrate 51 and whose depth is the thickness of the solder resist 54. Thus, the insulating substrate 51 and the copper wiring 53 are selectively covered with the solder resist 54.

The wiring substrate 11 includes wiring substrate units 60 for a single semiconductor package which are surrounded by the outer periphery 50 of the cut package and are arranged at predetermined intervals on a matrix. Similar wiring patterns are repeatedly formed on each wiring board unit 60 by copper wiring 53. A dashed line 64 shown in FIGS. 1A and 1C is a boundary line between the arrangement region of the wiring board units 60 and the peripheral region of the wiring base material around the arrangement region. The area inside the dashed line 64 is the arrangement area of the wiring board units 60, and the area outside the dashed line 64 is the peripheral area of the wiring base material. 1 (a) and 1 (c), the outer edges of the alternate long and short dash line 65 are the upper mold 21 and the lower mold 22 of the mold 20.
And clamped by. This is called a clamp area. Further, the inside of the one-dot chain line 65 is accommodated in a cavity area formed by the gate 31, the cavity 23a and the dummy cavity 32 of the upper mold 21, and is resin-molded. This is called a mold area. That is, the one-dot chain line 65 is a boundary line between the clamp region and the mold region. These dashed lines 64 and 65 are also attached to the corresponding positions in FIG. 2C and FIG.

The outer periphery of the solder resist 54 attached to the back surface of the wiring board unit 60 is located inside the outer periphery 50 of the cut package. In the arrangement region of the wiring board unit 60, the solder resist is not applied to the region between the outer periphery of the solder resist 54 and the outer periphery 50 of the package after cutting and the region outside the outer periphery 50 of the package after cutting. And the insulating substrate 51 is exposed. As a result, the wiring substrate unit 60 has a peripheral portion on the back surface where the solder resist is not applied and the insulating substrate 51 is exposed. This is to prevent the blade from coming into contact with the solder resist 54 on the back surface of the wiring board 11 at the time of cutting the package dicing. Since the blade does not contact the solder resist 54 on the back surface of the wiring board 11, there is no possibility that cracks such as cracks, chips or the like are generated in the solder resist 54.

In the present embodiment, a groove formed by exposing the insulating substrate 51 through the solder resist opening around each wiring board unit 60 is used as the suction groove 63. The suction groove 63 is also formed continuously in the peripheral region of the wiring base material. The layout in the arrangement area of the wiring board units 60 varies depending on the external dimensions of the wiring board units 60, but the suction grooves 63 formed in the peripheral area of the wiring base material are always provided at the same position, and standardization is performed. .

Next, the configuration of the mold 20 will be described with reference to FIG. FIG. 2 is a sectional view taken along line II of the mold 20 according to the embodiment of the present invention, FIG. 2A is a plan view of a main part of the upper mold 21, and FIG. is there. The mold 20 is a mold for transfer molding, and includes an upper mold 21 and a lower mold 22 as shown in FIG. The upper mold 21 and the lower mold 22 in the mold 20 are each composed of several blocks. The upper mold 21 has an upper mold center block 24. The lower die 22 has a lower die center block 25 and a wiring base material mounting block 42. The configuration of the lower die center block 25 and the upper die center block 24 is the same as the configuration of the above-described conventional die 120. The lower mold center block 25 is provided with a pot 27 into which a resin 26 is loaded. A resin 26 is loaded into the pot 27, and a plunger 28 for applying a pressure to the resin 26 is inserted. On the other hand, the upper die center block 24 is provided with a cull 29 at a position facing the pot 27. On both sides of the cull 29, runners 30 serving as flow paths for flowing the molten resin 26 into the cavity 23a are formed.

On both sides of the center block, the upper die 21 forms a gate 31, a cavity 23a and a dummy cavity 32. Therefore, the cull 29, the runner 30, the gate 31, the cavity 23a,
The dummy cavities 32 are formed continuously in this order.
The cavity 23a is for enclosing the semiconductor element 12 bonded on the wiring board 11, receiving the filling of the resin, and molding a sealing resin covering the semiconductor element 12.

The gate 31 is an inlet for the cavity 23a, and is connected to the runner 30. In order to uniformly inject and fill the molten resin 26 over the entire surface of the cavity 23a extending in the plane direction (width direction and depth direction), the molten resin 26 is substantially equal in length along the long side of the cavity 23a. A gate 31 having a parallel gap 31a continuous in the vertical direction is provided.

When such a gate 31 is used, the molten resin 26 supplied from the pot 27 via the cull 29 and the runner 30 is temporarily stored, and the injection pressure is reduced.
At the same time, the cavity 23a is almost uniformly injected into the cavity 23a from the entire long side of the cavity 23a, and can be almost uniformly filled over the entire surface of the cavity 23a. Therefore, the semiconductor element 12 on the wiring board 11
23a without being affected by the arrangement of
Filling of the inside with the molten resin 26 can be performed uniformly.
According to the mold 20, if the sizes of the wiring boards 11 are unified, the molding mold 20 can be shared even in the manufacture of semiconductor packages having different numbers and sizes of semiconductor elements.

As shown in FIG. 2B, a plurality of runners 30 are arranged in the longitudinal direction (width direction) of the gate 31.
Are distributed and connected. According to this embodiment, a plurality of pots 27 and a plurality of culls 29 opposed thereto are arranged at equal intervals along the longitudinal direction of the gate 31, and each pot 27 (cull 29) is provided. ), Two runners 30, 30 are connected in a state where they are equally arranged in the longitudinal direction of the gate 31.

As described above, the plurality of runners 30 are connected to the gate 31.
The molten resin 26 can be injected almost uniformly over the entire length of the long gate 31 by connecting the gates to positions substantially equidistant with respect to the longitudinal direction of the long gate 31. Can be appropriately performed.

Further, in this embodiment, a dummy cavity 32 is provided in a long side portion opposite to the long gate 31 of the cavity 23a described above. Between the cavity 23a and the dummy cavity 32, a parallel gap 32a is provided along the long side of the cavity 23a, which is substantially equal in length and continuous in the length direction.

When such a dummy cavity 32 is provided, the molten resin 26 filled from the gate 31 into the cavity 23a enters the dummy cavity 32 at the end of the filling. Therefore, there is no reflection of the resin 26 to the cavity 23a, and the resin 26 flows smoothly. Therefore, substantially uniform filling of the resin 26 over the entire surface in the cavity 23a can be performed more reliably. Therefore, at the time of resin sealing, the flow of the resin is not interrupted by the semiconductor element 12 or the bonding wires 16 bonded on the wiring board 11, and there is no problem such as unfilling or wire flow. If the dummy cavity 32 is not provided, the resin that has reached the opposite side of the gate 31 rebounds and flows back to the portion where the filling of the resin is delayed. Inevitable. However, providing the dummy cavity 32 can solve such a problem.

On the side of the dummy cavity 32, an air vent 46 for releasing gas (air) in the cavity 23a at the time of filling the resin is provided. This air vent 46
Are formed by streak-like grooves formed on the clamp surface of the upper die 21. At the position facing the gate 31, the cavity 23a and the dummy cavity 32, the lower mold 2
2 forms a cavity 23b. Cavity 23
“b” is for accommodating the wiring board 11. Mold 20
Forms a cavity that seals the wiring base 11 and the semiconductor element 12 by the cavities 23a and 23b.

The wiring base material mounting block 42 is
1 is a portion on which is mounted. Wiring base mounting block 42
Forms a cavity 23b for receiving the wiring board 11 by being lower than the surrounding blocks. The wiring base mounting block 42 is vertically movably supported by a floating mechanism using a spring 43, and the vertical movement can change the depth of the cavity 23b. As described above, such a floating mechanism is necessary when a wiring board 11 of a semiconductor package having a relatively uneven thickness is used, and when a tape material is used as the wiring board 11, it is not necessary.

The upper die 21 is provided with a suction hole 44 for sucking the release film by vacuum. The suction hole 44 has an opening 44a on the surface of the cavity 23a or the like, and is connected to a vacuum source (not shown) outside the mold 20. In a mold that does not use a release film, the suction hole 44 is not required.

The lower die 22 is provided with a suction hole 45 for vacuum-sucking the wiring board 11. Suction hole 45
Is connected to a vacuum source (not shown) outside the mold 20 on one side, and is connected to the wiring base mounting block 42 on the other side.
An opening 45a is arranged at a predetermined position on the wiring base material mounting surface of the wiring base material mounting block 42 extending inside. FIG.
As shown in (c), the opening 45a faces a region outside the wiring board unit 60 on the back surface of the wiring board 11 and is within the dashed-dotted line 65 of the cavity (gate 31, cavity 23a , The dummy cavity 32), and further, at a position facing the wiring substrate peripheral region outside the dashed line 64, and at a position facing the suction groove 63. Therefore, the wiring board 1
1 is installed on the wiring base material mounting block 42, the opening 4
5a is connected to the suction groove 63 formed in the peripheral region of the wiring base material. The diameter of the opening 45a is the opposite of the suction groove 63.
Smaller than the width of Solder resist 54 by suction
In order not to hurt.

The resin molding apparatus equipped with the mold 20 includes an upper base (not shown) for supporting the upper mold 21, a lower base (not shown) for supporting the lower mold 22, and heating of the mold 20. A vacuum pump (not shown) serving as the above-described vacuum source, a mold clamping mechanism (not shown), an injection mechanism (not shown), and a plunger 28.
The upper and lower dies 21, 22 are fixed to the upper and lower bases using plates, bolts (not shown), and the like. The upper base or the lower base is configured to be able to move up and down by a mold clamping mechanism to open and close the mold 20.

Next, a resin molding method for a semiconductor device and a method for manufacturing the semiconductor device according to the present embodiment will be described with reference to FIGS. FIG. 3 is a cross-sectional view of the mold 20 in each step in the resin molding method according to one embodiment of the present invention.

[Bonding Step] As a step before the resin molding step, a bonding step is performed. In the bonding step, as shown in FIGS. 1A and 1B, semiconductor elements 12 for a plurality of semiconductor packages are arranged and mounted on a main surface (front surface) of a single wiring board 11 in a matrix. . The internal connection of the wiring is performed by a wire bonding technique or the like. In this embodiment, the semiconductor elements 12 are internally connected by bonding wires 16. In addition, there is a wireless bonding method for connecting the semiconductor elements 12 using metal bumps for internal connection.

[Step before mold clamping (FIG. 3A)] Next, a resin molding step is performed. First, the process before mold clamping is shown in FIG.
This will be described with reference to FIG. The wiring board 11 is mounted on the wiring base mounting block 42 of the lower die 22. As a result, the suction groove 63 and the suction hole 45 provided on the back surface of the wiring board are formed.
Is connected to the opening 45a. That is, the suction groove 63
And the suction hole 45 are connected. At the same time or after mounting the wiring board 11, the suction holes 45 are evacuated. Then, the suction hole 45 and the inside of the suction groove 63 connected thereto become negative pressure, and the wiring board 11 is suction-supported on the wiring substrate mounting surface. As shown in FIG. 1C, the suction grooves 63 are provided at substantially equal intervals in the vertical and horizontal directions in the mold area. Adsorption power can be obtained.

The dummy cavity 32 of the upper die 21
Cavity 23a, gate 31, cull 29 and runner 3
The release film 41 is arranged so as to cover the inner surface of the upper mold 21 by vacuum suction of the release film 41 to the cavity surface by the suction hole 44. At this time, the opening 44a of the suction hole 44
Is closed by the release film 41. But,
Since the release film 41 has a property of allowing gas to permeate, some gas (air) that has passed through the release film 41 is continuously sucked into the suction holes 44. Therefore, the release film 41 does not completely block the flow of gas to the suction holes 44. Note that the release film 41 is for facilitating the release of the resin 26. When the release film 41 is not used, a method is used in which a pin is disposed in the mold portion and the pin is released by pressing the pin by an eject mechanism.
A mold release agent is periodically used in a portion of the inner surface of the resin 1 where the resin 26 enters, so that the mold release is more reliably performed.

In this embodiment, in order to prevent the wiring board 11 from rising, the pressure value acting on the front surface of the wiring substrate 11 when the mold 20 is in the closed state is determined by the pressure value acting on the rear surface of the wiring board 11. Set higher. In the present embodiment, the control is performed by the negative pressure. In other words, when the mold 20 is in the closed state, the negative pressure value acting on the back surface of the wiring substrate 11 is set to be larger than the negative pressure value acting on the front surface of the wiring substrate 11. Will be done. Therefore, before clamping, the valve for adjusting the output and the degree of vacuum of the vacuum pump for evacuating the suction hole 44 and the valve for adjusting the output and the degree of vacuum of the vacuum pump for evacuating the suction hole 45 are operated. Thus, when the mold 20 is in the closed state, the control is performed such that the negative pressure value acting on the back surface of the wiring board 11 becomes larger than the negative pressure value acting on the front surface of the wiring board 11. When it is difficult to directly detect the pressure value acting on the front and back of the wiring board 11, the negative pressure value of one vacuum source for sucking the wiring board 11 and the release film 41
A negative pressure value of another vacuum source for sucking the wiring board 11 is detected, and the former is set to be larger than the latter, or a valve provided in a flow path for sucking the wiring board 11 and a mold 20 is provided along the flow path. And the negative pressure value at the valve closest to the mold, and the negative pressure value at the valve closest to the mold 20 along the flow path for sucking the release film 41 are detected. And
Set the former larger than the latter. Thereby, the mold 20
The wiring board 11 confined inside does not rise from the mold surface, and components attached to the wiring board surface such as bonding wires do not contact the release film. As a result, there is an advantage that a resin package having good appearance can be obtained without damaging a component attached to the surface of the wiring board such as a bonding wire due to contact.

The wiring board 11 and the release film 41
Is heated by contacting the mold 20 which has been heated in advance by a heater (not shown). Wiring board 11
Is heated from the back surface, immediately after being mounted on the wiring board mounting block, a larger thermal expansion occurs on the back surface side, and the whole may be warped. The warpage of the wiring board 11 decreases as the thermal equilibrium heat progresses. Therefore, it is necessary to wait for the resin filling at least until the undesired warpage disappears. Next, the pot 2 of the lower mold 22
The tablet-like resin 26 (resin tablet) is loaded into the inside of the box.

[Mold Clamping (FIG. 3B)] After that, the upper mold 21 and the lower mold 22 are joined by operating the resin molding apparatus, and the mold 20 is clamped. At this time, the outer edge of the wiring board 11 is sandwiched and clamped by the upper mold 21 and the lower mold 22. The region where the semiconductor elements 12 are arranged at the center of the wiring board 11 is confined in the cavity 23 without being directly clamped.

In the conventional resin molding method, as shown in FIG. 8B, when the wiring base material 111 is confined in the mold 120, the negative pressure of the suction hole 44 is reduced.
1 and acts on the wiring substrate 111,
Is attracted toward the upper die 121, and a phenomenon occurs in which the center of the wiring substrate 111 rises from the surface of the wiring substrate mounting block 142. However, in the resin molding method of this embodiment, when the mold 20 is in the closed state,
Is controlled so that the negative pressure value acting on the back surface of the wiring board 11 becomes larger than the negative pressure value acting on the front surface of the wiring board 11, such floating does not occur.

[Resin injection / filling (FIG. 3C)
(D))] Next, the resin 26 is melted, and the melted resin 2 is melted.
The resin 6 is injected by being pushed up by the plunger 28, flows into the cavity 23 through the cull 29 and the runner 30, and is filled with the resin 26 in the mold 20. The gas (air) existing in the cavity 23 before the inflow of the resin 26 is pushed forward of the resin flow according to the inflow of the resin 26, and is discharged from the air vent 46.

In the conventional resin molding method, as shown in FIG. 8C, when the melted resin 26 is pressed into the cavity 23a, the resin inflow end portion of the wiring base material 111 is lifted by the twist. Happened. However, in the resin molding method of the present embodiment, since the wiring board 11 is sucked to the board mounting surface by the suction holes 45 and the suction grooves 63, such lifting does not occur.

[Resin Curing] As the resin 26, a thermosetting resin such as an epoxy resin is used. Resin 26 to mold 20
After filling the inside, the resin 26 is baked and cured. Thereafter, the mold 20 is opened, the wiring board 11 is taken out, and the release film 41 is separated from the sealing resin. Through the above steps, the package panel 18 as shown in FIG. 4A is completed. FIGS. 4A and 4B are plan views (a) and (b) of a package panel 18 according to an embodiment of the present invention. FIG. 4 (b) shows a cutting line 71 and a semiconductor package 10 singulated.

[External Terminal Formation] Next, the semiconductor device is sent to an external terminal formation step. In this embodiment, a BGA package is produced. Therefore, the solder balls 5 are provided on the back surface of the wiring board 11.
5 (see FIG. 6) is used as an external terminal. [Package Dicing] Next, a package dicing step is performed. The package dicing is performed using a dicing device (not shown) that performs abrasive grain cutting by rotating a circular blade 19 as shown in FIG. FIG. 5 is a perspective view showing how the package panel 18 is cut by the circular blade 19. The package panel 18 is cut by the circular blade 19 along a cutting line 71 as shown in FIG. 4B, and individualized into individual semiconductor packages 10. The circular blade 19 cuts between the broken lines 50, 50 shown in the partial enlarged view of FIG. As shown in FIG. 1, the wiring board 11 of the present embodiment includes a wiring board unit 60,
Since they are arranged in 4 × 16, 64 BGs
An A-type semiconductor package 10 is obtained.

FIG. 6 shows the structure of the semiconductor package 10. FIG. 6 is a partial sectional view (a) and a rear view (b) of the semiconductor package 10 manufactured according to the embodiment of the present invention. The semiconductor package 10 includes an insulating substrate 51 having a through hole 52, a copper wiring 53 formed on the front and back surfaces of the insulating substrate 51 and the through hole 52, and a solder resist 54 having a predetermined opening for insulatingly covering the insulating substrate 51. And a bonding material (die bond material) 56 applied to the surface of the wiring substrate unit 60, and adhered to the surface of the wiring substrate unit 60 via the bonding material 56. Semiconductor element 1
2, the bonding wire 16 for wiring between the electrode pad 72 of the semiconductor element 12 and the wire bonding portion 61 of the copper wiring 53, and the surface of the wiring board unit 60 provided with the semiconductor element 12 and the bonding wire 16 are sealed. Encapsulating resin 13 including the encapsulating resin 13 and the solder balls 55 attached to the external terminal joining lands 62.
This is a semiconductor device of a package dicing cutting method. The solder resist 54 has an effect of insulating between wirings, between external terminals, and between the wiring and the semiconductor chip.
For the bonding material (die bond material) 56, a eutectic alloy, solder,
Resin or the like is used. Epoxy resin is mainly used for the sealing resin 13.

As shown in FIG. 6B, when observing the back surface of the semiconductor package 10, the outer periphery 73 of the solder resist 54 is provided inside the outer periphery 50 of the cut package. That is, the semiconductor package 10 does not have a solder resist applied on its back surface and the insulating substrate 51
Has an exposed peripheral portion.

Here, the verification performed by the inventor will be disclosed.
The pressure was measured with a pressure gauge outside the mold, and the suction pressure value (negative pressure value) for the wiring board 11 was set to 52 kPa (atmospheric pressure 24).
kPa) and the suction pressure value (negative pressure value) for the release film 41 is 20, 30, 40, 50, 70
kPa (atmospheric pressure 56, 46, 36, 26, 6 kPa) was sequentially changed to perform the resin sealing step. The resin surface of the resulting package panel was inspected for the appearance, and the occurrence of wire transfer failure was investigated. What is poor wire transfer?
This refers to a defect in which the wiring board 11 rises and the bonding wires 16 contact the release film 41 to form contact marks, and the contact marks are transferred to the surface of the sealing resin 13.

When the suction pressure value (negative pressure value) of the release film 41 was set at 20, 30, 40, and 50 kPa, no wire transfer failure occurred. However, when the suction pressure value (negative pressure value) for the release film 41 was set to 70 kPa, poor wire transfer occurred. Therefore, in order to prevent the occurrence of wire transfer failure, the suction pressure value (negative pressure value) for the wiring board 11 is required.
Has to be larger than the suction pressure value (negative pressure value) for the release film 41. If the suction pressure value (negative pressure value) for the release film 41 is larger than the suction pressure value (negative pressure value) for the wiring board 11, wire transfer failure occurs. The occurrence of the wire transfer failure is a proof that the wiring board 11 has risen. Therefore, in order to prevent the wiring board 11 from floating,
Release pressure value (negative pressure value) for release film 4
It is preferable that the pressure is larger than the suction pressure value (negative pressure value) for 1.

Second Embodiment Next, a molding die according to a second embodiment of the present invention will be described with reference to FIG. The mold for molding according to the present embodiment relates to a technique for optimizing the prevention of floating of a relatively large wiring base from the mold surface and the common use of the mold. The molding die of the present embodiment is different from the molding die of the first embodiment in that the opening position of the suction hole formed in the wiring substrate mounting block 42 is different.

As shown in FIGS. 7A to 7D, the wiring base mounting blocks 42a, 42b, 42c, and 42d according to the molding die of the present embodiment are provided with the molding of the first embodiment. The opening 45a of the suction hole 45 is provided in the peripheral area of the wiring base material mounting surface in the same manner as in the die. However, unlike the first embodiment, the wiring substrate mounting block 42
The openings 45b of the suction holes 45 are provided in the positions a, 42b, 42c, and 42d at positions opposed to the arrangement area of the wiring board units 60 within the alternate long and short dash line 64. FIG.
The wiring substrate mounting block 42a shown in (a) has two openings 45b arranged on a central axis (not shown) in the longitudinal direction (left-right direction in the drawing) of the wiring substrate mounting surface. The openings 45b of the wiring base material mounting block 42a are arranged at substantially equal intervals so that the center axis of the openings 45b substantially coincides with the trisection point of the line segment cut off by the alternate long and short dash line 64. FIG.
The wiring substrate mounting block 42b shown in (b) is provided with four openings 45b on the central axis (not shown) in the longitudinal direction (left-right direction in the drawing) of the wiring substrate mounting surface. The openings 45b of the wiring base material mounting block 42b are arranged at substantially equal intervals so that the central axis thereof substantially coincides with the quintuple of the line segment cut off by the alternate long and short dash line 64. FIG.
The wiring substrate mounting block 42c shown in (c) has a central axis (not shown) in the width direction (vertical direction in the figure) of the wiring substrate mounting surface.
The upper part is provided with three openings 45b. The openings 45b of the wiring base material mounting block 42c are arranged at substantially equal intervals so that the center axis of the openings 45b substantially coincides with the quadrants of the line segment cut off by the alternate long and short dash line 64. FIG. 7D
The wiring base material mounting block 42d shown in FIG. 4 has four openings 45b distributed almost evenly in the arrangement area of the wiring board unit 60 within the dashed line 64.

The wiring substrate mounting blocks 42a, 42b, 42
With the use of c and 42d, the opening portion 45b allows a sufficient suction supporting force to be applied to the entire surface of a relatively large wiring board regardless of whether or not the suction groove is provided on the wiring board. It is possible to get With it,
The position of the opening 45b is determined so that it is as easy as possible to design the wiring board so that the wiring base unit as a product does not contact the opening 45b. Can be.

The other structures of the mold and the resin molding method are the same as those of the resin molding method and the mold for molding of the first embodiment.

Third Embodiment Next, a resin molding method according to a third embodiment of the present invention will be described. In this embodiment, unlike the first embodiment, a gas is pressed into the cavity from the air vent 46 without adsorbing the wiring board 11, and the pressure of the gas causes the wiring board 11 to move the wiring board 11 to the base mounting surface of the wiring base mounting block 42. And a resin molding method for filling the cavity with a resin while supporting the cavity by pressing. Therefore, unlike the first embodiment, the suction hole 45 and the suction groove 63 are not required. Release film 41
May or may not be used.

In the resin molding method of the present embodiment, after performing the bonding step and the pre-clamping step in the same manner as the resin molding method of the first embodiment, the mold is clamped, and gas is injected into the cavity from the air vent 46. .

According to the resin molding method of the present embodiment,
The wiring substrate 11 confined in the mold 20 does not rise from the substrate mounting surface of the wiring substrate mounting block 42, and a component attached to the wiring substrate surface such as a bonding wire contacts the release film. There is no. As a result, it is possible to obtain a resin package having good appearance without damaging parts attached to the surface of the wiring base such as bonding wires due to contact. The resin flowing into the cavity also receives the pressure of the gas press-fitted into the cavity. The resin pressure can be uniformly filled by this gas pressure.

[0104]

Next, an example of the dimensions of each part will be described. The external dimensions of the wiring board 11 shown in FIG.
m. Semiconductor package 10 (wiring board unit 6)
The outer dimensions of 0) were 10 mm square. Circular blade 19
The cutting width of the cutting blade of FIG.
The width of the cutting margin between the broken lines 50, 50 shown in the partially enlarged view of (b) was set to about 0.35 mm. The suction groove 63 between the wiring board units 60 has a width of 0.5 mm and a depth of 0.03 m.
m. The suction groove 63 in the substrate peripheral area is
It was prepared to have a width of 1.2 mm and a depth of 0.03 mm. The diameter of the opening 45a of the suction hole 45 is 1.0 mm, and the opening 45b
Was manufactured to have a diameter of 0.3 mm. In the case of the above dimensions, the wiring substrate 11 is sufficiently held in the cavity 23b by the molding die of the first embodiment in which the opening 45b of the suction hole 45 is not provided in the arrangement region of the wiring substrate unit 60. Thus, the semiconductor package can be favorably manufactured without giving internal and external defects.

[0105]

As described above, according to the present invention, since the means for supporting the wiring base material on the mold surface is provided, the wiring base material confined in the mold is prevented from floating from the mold surface, There is an effect that components attached to the surface of the wiring base material such as bonding wires are prevented from coming into contact with the release film. As a result, there is an effect that a resin package having a good appearance can be obtained without damaging parts attached to the surface of the wiring base material such as bonding wires due to contact, and without appearance defects such as poor wire transfer.

[Brief description of the drawings]

FIG. 1 shows a wiring board 11 according to a first embodiment of the present invention.
(A), AA sectional view (b), and back view (c) of FIG.
It is.

FIGS. 2A and 2B are a sectional view taken along line II of a mold 20 according to Embodiment 1 of the present invention, a plan view of a main part of an upper mold 21 and a plan view of a wiring base material mounting block 42, respectively. (C).

FIG. 3 is a cross-sectional view of the mold 20 in each step in the resin molding method according to the first embodiment of the present invention.

FIGS. 4A and 4B are plan views (a) and (b) of the package panel 18 according to the first embodiment of the present invention. FIG. showed that.

FIG. 5 is a perspective view showing a state where a package panel 18 is cut by a circular blade 19;

FIG. 6 is a partial sectional view (a) and a rear view (b) of the semiconductor package 10 manufactured according to the first embodiment of the present invention.

FIG. 7 is a plan view of a base material mounting block according to Embodiment 2 of the present invention.

FIG. 8 is a sectional view of each step of a mold 120 using a release film 41 of a conventional example.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 10 ... Semiconductor package 11 ... Wiring board 12 ... Semiconductor element 13 ... Sealing resin 16 ... Bonding wire 18 ... Package panel
19: circular blade (cutting means) 20: mold 21:
Upper mold 22 Lower mold 23a, 23b Cavity 24 Upper mold center block 25 Lower mold center block 26 Resin 27 Pot 28 Plunger 29 Cul 30
Runner 31 Gate 32 Dummy cavity 41 Release film 42 Wiring substrate mounting block 43 Spring 44 Suction hole 45 Suction hole 45a, 45b Opening 50 50 Package outer periphery after cutting 51 Insulating substrate 52 ... Through Hole 53 ... Copper Wiring 54 ... Solder Resist 55 ... Solder Ball 56 ... Bonding Material 60 ... Wiring Board Unit 61 ... Wire Bonding Part 62 ... Land Part for External Terminal Bonding 63 ... Suction Groove 73 ... Outer Perimeter of Solder Resist 120 … Mold 121
... Upper mold 122 ... Lower mold 142 ... Wiring base mounting block

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Hisayuki Tsuruta 5-7-1 Shiba, Minato-ku, Tokyo F-term in NEC Corporation (reference) 4F202 AD05 AD08 AD19 AH33 CA12 CB01 CB12 CK41 CK85 CM72 CP01 CP06 4F206 AD05 AD08 AD19 AH37 JA02 JB12 JB17 JF05 JN25 JQ81 5F061 AA01 BA03 CA21 DA06 DA08

Claims (18)

[Claims] 1. A tape-shaped or plate-shaped wiring base having a plurality of semiconductor elements bonded to a surface of a wiring base provided on one of an upper mold and a lower mold of a molding die. When mounting a material, clamping the edge of the wiring base material with an upper mold and a lower mold by clamping, and enclosing the semiconductor element in a single cavity, and filling the cavity with a resin, A resin molding method, wherein a pressure value acting on the surface of the wiring base material is set higher than a pressure value acting on the back surface of the wiring base material when the mold for molding is in a closed state. 2. The method according to claim 1, wherein the upper and lower molds are provided with suction holes opened on the surface of the cavity, and the suction holes are connected to a vacuum source. The release film is sucked through the suction holes and vacuum-sucked, and the other mold is suctioned through the suction holes on the back surface of a tape-shaped or plate-shaped wiring substrate having a plurality of semiconductor elements bonded to the surface. Vacuum suction, mold clamping, clamping the edge of the wiring base with an upper mold and a lower mold, enclosing the semiconductor element in a single cavity, and filling the cavity with resin. A resin molding method, wherein a negative pressure value acting on the back surface of the wiring base material is set to be larger than a negative pressure value acting on the front surface of the wiring base material when the molding die is in a closed state. 3. An upper hole and a lower hole in a cavity surface are provided in an upper mold and a lower mold of a mold for molding, and the suction hole is connected to a vacuum source. The release film is sucked by the suction hole and sucked in vacuum, and the other mold is suctioned by the suction hole on the back surface of a tape-shaped or plate-shaped wiring base having a plurality of semiconductor elements bonded to the surface. Vacuum suction, mold clamping, clamping the edge of the wiring base material with an upper mold and a lower mold, enclosing the semiconductor element in a single cavity, and filling the cavity with resin. When the molding die is in a closed state, a negative pressure value of one vacuum source for sucking the wiring base material is set to be larger than a negative pressure value of another vacuum source for sucking the release film. Resin molding method. 4. An upper surface and a lower surface of a mold for molding are provided with suction holes opened on the surface of a cavity, and the suction holes are connected to a vacuum source, so that one of the upper and lower dies is connected to the suction hole. The release film is sucked by the suction hole and sucked in vacuum, and the other mold is suctioned by the suction hole on the back surface of a tape-shaped or plate-shaped wiring base having a plurality of semiconductor elements bonded to the surface. Vacuum suction, mold clamping, clamping the edge of the wiring base material with an upper mold and a lower mold, enclosing the semiconductor element in a single cavity, and filling the cavity with resin. When the molding die is in a closed state, the negative pressure value of the valve provided in the flow path for sucking the wiring base material and the valve closest to the die along the flow path is released. Provided in the channel for sucking the film Resin molding method characterized in that a valve is set to be larger than the negative pressure value at the most recent valve mold along the flow path. 5. A tape-shaped or plate-shaped wiring in which a plurality of semiconductor elements are bonded to the surface in a cavity of the molding die using a molding die having a vent hole opened on the surface of the cavity. Setting a base material, clamping the edge of the wiring base material with an upper mold and a lower mold of the molding die and confining the semiconductor element in a single cavity; A resin molding method characterized by filling a resin into the cavity while pressing and supporting the wiring substrate on the surface of the cavity by the pressure of the gas. 6. A mold for molding, wherein the wiring base is a plate-shaped wiring base (wiring substrate) and the mold for molding is supported by a wiring base mounting block which is vertically movable by a floating mechanism. The resin molding method according to any one of claims 1 to 5, wherein the resin molding method is a mold. 7. A tape-shaped or plate-shaped wiring base comprising a plurality of wiring base units for a single semiconductor package at predetermined intervals, and a semiconductor element is bonded to a surface of each wiring base unit; On the other hand, a suction hole having an opening on the wiring substrate mounting surface of one of the upper mold and the lower mold of the mold for molding is formed in the wiring base on the back surface of the wiring substrate. It is formed so as to face the region outside the material unit, and to face the cavity of the other mold. Thereafter, the back surface of the wiring base is placed on the wiring base mounting surface, and the suction hole is formed. Connected to a vacuum source, while holding the wiring base by suction on the wiring base mounting surface by setting the suction hole to a negative pressure, clamping the edge of the wiring base to the upper mold and the lower mold by clamping. And clamp the semiconductor device in a single cavity. And filling the cavity with a resin. 8. The resin molding method according to claim 7, wherein the opening is arranged so as to face a peripheral region of the wiring base material. 9. The resin molding method according to claim 7, wherein the opening is disposed so as to face a region between the wiring base units. 10. A plurality of said openings, some of which are arranged so as to face the peripheral region of the wiring base material, and other openings are arranged so as to face the region between said wiring base material units. The resin molding method according to claim 7, wherein the resin molding is arranged. 11. A tape-shaped or plate-shaped wiring base provided with a plurality of wiring base units for a single semiconductor package at predetermined intervals is mounted on one of an upper die and a lower die, and the other die is What is claimed is: 1. A mold for molding a plurality of semiconductor packages in a single cavity, wherein a plurality of openings are formed in a surface of said one mold on which a wiring substrate is mounted, within a range opposed to the cavity of said other mold. Are provided, and some of the openings are arranged in the peripheral region of the wiring base material mounting surface, and the other openings are substantially central axes in the width direction or the longitudinal direction of the wiring base material mounting surface. A mold for molding, wherein the mold is disposed on the upper surface. 12. A tape-shaped or plate-shaped wiring base having a plurality of wiring base units for a single semiconductor package at predetermined intervals is mounted on one of an upper die and a lower die, and the other die is mounted on a lower die. What is claimed is: 1. A mold for molding a plurality of semiconductor packages in a single cavity, wherein said mold has an opening in a surface facing said one of the wiring substrate mounting surfaces within a range facing said cavity of said other mold. A hole is provided, and the position of the opening is in a region other than a region where the wiring base unit is mounted on the wiring base mounting surface, wherein a mold is provided. 13. A tape-shaped or plate-shaped wiring base provided with a plurality of wiring base units for a single semiconductor package at predetermined intervals, and a suction groove is formed on a back surface of the wiring base unit. Bonding the semiconductor element, on the other hand, forming a suction hole having an opening on the wiring substrate mounting surface thereof in the mold for molding, so that the opening faces the suction groove, The back surface of the wiring base is placed on the wiring base mounting surface, the suction hole is connected to a vacuum source, and the suction hole and the inside of the suction groove are set to a negative pressure by the vacuum source, so that the wiring base is While adsorbing and supporting the material on the wiring base material mounting surface, clamping the edge of the wiring base material with an upper die and a lower die while enclosing the semiconductor element in a single cavity, Characterized by filling resin inside Resin molding method. 14. The resin molding method according to claim 13, wherein the suction groove is formed in a region between the wiring base units. 15. The semiconductor device according to claim 15, wherein the suction groove extends from a region between the wiring base units to a wiring base peripheral region, and the opening is disposed so as to face the wiring base peripheral region. The resin molding method according to claim 13, which is performed. 16. The suction groove is formed continuously from a region between the wiring base units to a wiring base peripheral region, and the plurality of openings are formed, and some of the openings are formed in the wiring base peripheral region. 14. The resin molding method according to claim 13, wherein the resin molding method is arranged so as to oppose the opening, and another opening is arranged so as to oppose a region between the wiring base units. 17. The resin molding method according to claim 13, wherein the suction groove is formed by selectively applying a solder resist on the back surface of the wiring base material. 18. A wiring substrate provided with a plurality of wiring substrate units for a single semiconductor package at predetermined intervals, wherein a solder resist is selectively provided on a back surface thereof and formed as a solder resist opening. Are continuously formed from the region between the wiring base unit to the peripheral region of the wiring base.