TW580745B - Electroplating jig for semiconductor wafers and apparatus for electroplating wafers - Google Patents

Electroplating jig for semiconductor wafers and apparatus for electroplating wafers Download PDF

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Publication number
TW580745B
TW580745B TW88108029A TW88108029A TW580745B TW 580745 B TW580745 B TW 580745B TW 88108029 A TW88108029 A TW 88108029A TW 88108029 A TW88108029 A TW 88108029A TW 580745 B TW580745 B TW 580745B
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Taiwan
Prior art keywords
semiconductor wafer
holding member
ring
patent application
plating
Prior art date
Application number
TW88108029A
Other languages
Chinese (zh)
Inventor
Junichiro Yoshioka
Yoshitaka Mukaiyama
Original Assignee
Ebara Corp
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Filing date
Publication date
Priority claimed from JP36342897A external-priority patent/JP3847434B2/en
Priority claimed from JP1482798A external-priority patent/JP4037504B2/en
Application filed by Ebara Corp filed Critical Ebara Corp
Application granted granted Critical
Publication of TW580745B publication Critical patent/TW580745B/en

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  • Electroplating Methods And Accessories (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The purpose of the present invention is to provide a plating jig of a semiconductor wafer, which sandwiches and holds the semiconductor wafer between the first holding member and the sealing gasket of the second holding member. The second holding member is provided with the second energizing member, which comes into contact with both of the first energizing member of the first holding member and the semiconductor, so as to use tight ring to press the second holding member on the first holding member for holding the semiconductor wafer.

Description

580745 五、發明說明(l) [發明所屬的技術領域] 本發明為關於半導體晶圓之電鍍夾具及半導體晶圓之 電鍵裝置。半導體晶圓之電鍍夹具為對半導體晶圓實行電 鍍時用以保持半導體晶圓者。 [關連技術] 在對半導體晶圓實行電鍍時,以電渡夾具將半導體晶 圓保持的狀態使通電栓接觸於半導體晶圓之導電膜。然 後’將保持半導體晶圓狀態的電鍍夾具浸潰於電鍍槽之電 鑛液中,經由電鍍液及通電栓使電流流通於半導體晶圓而 實行電鑛。 如上述對半導體晶圓實行電鍍時,將半導體晶圓以電 鍍夾具保持,使通電栓接觸於半導體晶圓,經由該通電栓 而流通電流 '然而以習用電鍍夾具,其半導體晶圓的安裝 不容易,並且無法確實使通電栓接觸於半導體晶圓的導^ 以提供半導 晶圓導電膜的 本發明的第1形態為有鑑於上述的問題, 體晶圓的安裝容易,並能確實通電於半導體 半導體晶圓電鍍夾具為第1目的。580745 V. Description of the invention (l) [Technical field to which the invention belongs] The present invention relates to a plating fixture for a semiconductor wafer and a key device for the semiconductor wafer. The plating fixture for a semiconductor wafer is used to hold the semiconductor wafer when electroplating the semiconductor wafer. [Related technology] When electroplating a semiconductor wafer, the conductive plug is brought into contact with the conductive film of the semiconductor wafer in a state where the semiconductor wafer is held by an electric jig. Then, the electroplating jig is immersed in the electroplating bath's electroplating bath to maintain the state of the semiconductor wafer, and electric current is passed through the electroplating bath and the current-supply plug to the semiconductor wafer to perform electroplating. When performing plating on a semiconductor wafer as described above, the semiconductor wafer is held by a plating jig, and a current-carrying pin is brought into contact with the semiconductor wafer, and a current flows through the current-carrying pin. However, it is not easy to mount the semiconductor wafer with a conventional plating jig. In addition, the first aspect of the present invention in which a conductive pin cannot be brought into contact with a semiconductor wafer to provide a semiconductive wafer with a conductive film is that in view of the problems described above, the mounting of the bulk wafer is easy, and the semiconductor can be reliably energized. The semiconductor wafer plating jig has a first purpose.

π由用%锻爽具 < 遇罨栓密封方法 在半導體晶圓及保持該半導體晶圓保持構件 1 塾,將該密封墊以複數的螺栓螺固以施加 2 = 以密封。 j寻的面壓j 然而,以複數螺栓螺固以施加均一面壓 針的方法其作業性不良。又由於不容易在每一螺π by using forging cooler < sealing pin sealing method On the semiconductor wafer and holding the semiconductor wafer holding member 1 塾, the gasket is screwed with a plurality of bolts to apply 2 = to seal. Seeking the surface pressure j However, the method of applying a uniform surface pressure pin by using a plurality of bolts to screw the screws has poor workability. Because it is not easy to

580745 發明說明(2) 五 而=致施加力量不均時,發生電鍍液浸透的狀況。 密封熱以®發明的第2形態為有鏗於上述問題,以提供對 -螺固力:::業容易並對於密封墊的外周近傍能施加均 [發明的概要]晶圓的電鍍夾具為第2目的。 墊的ί 2,呆月持的槿第2形態係具備;第1保持構件,及設有密封 構件盥咳# 將半導體晶圓挾持並保持於該第1保持 的半導圓,件之密封墊間,同時構成 曰曰圓表面露出該密封墊之内周部,並 件,以及述第1保持構件設導通於外部電極之第1通電構 坌1供於則述第2保持構件設接觸於前述第1 ##槿祙> "^^^,ίΓΛ^ 晶圓電鍍夾具ί為通電構件為特徵的半導體 述第1通發電:第二形成-環狀,前 晶圓外周邊近傍之位置部分為宜别述第1保持構件之半導體 刖述雄、封塾的斷面為逆U字, 方接於前述第1保持構件 該逆ϋ予狀的前端部一 半導體晶圓之面,並於二」/方前端部則接觸於前述 將前述第2通電構件收、容該並兩端部間設通電構件收容孔, 宜。 冑件收夺並安裝於該通電構件收容孔為 再則則逑第2通電構件係以側面形成逆ϋ字狀,該逆υ . $ 5頁 C:\Program Files\Patent\31062l.ptd 580745580745 Description of the invention (2) Five: When the applied force is uneven, the plating solution penetrates. The second aspect of the invention of the sealing heat is to solve the above-mentioned problems in order to provide the counter-screwing force :: The industry is easy to apply the plating fixture of the wafer to the outer periphery of the gasket [summary of the invention]. 2 goals. The second form of the hibiscus of the mat is provided. The first holding member and a sealing member are provided. # A semiconductor wafer is held and held on the semi-conductive circle of the first holding member. At the same time, a round surface is exposed to expose the inner peripheral portion of the gasket, and the first holding member is provided with a first current-carrying structure that is electrically connected to an external electrode. The second holding member is provided in contact with the foregoing. No. 1 ## hibi 祙 > " ^^^, ίΛΛ ^ Wafer plating jigs Semiconductors featuring current-carrying components First pass power generation: Second formation-annular, near the outer periphery of the front wafer In order to distinguish the semiconductor cross section of the first holding member, the cross section of the seal is a reverse U-shape, and it is connected to the surface of a semiconductor wafer at the front end of the first holding member in the reverse shape. "/ The front end of the square is in contact with the aforementioned second current-carrying member, and the current-carrying member accommodating hole is preferably provided between the two ends. The file is captured and installed in the receiving hole of the current-carrying member, and then the second current-carrying member is formed in a reverse shape on the side, which is reversed. $ 5 pages C: \ Program Files \ Patent \ 31062l.ptd 580745

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於前述第1保持構件保持 置的部分設第!通電構件,丰導體晶圓外周邊近傍位 於前述第2保持構件之來封敌^ ^ 保持構件之第1通電構件及露出接觸於設在前述第1 其特徵的半導體晶圓電鍍夾且 =^之第2通電構件為 本發明的第2形態係Λ具施態樣。 成凸起部’又,第i保持構預的定爪間隔二 勒緊環旋轉預定尺寸使該凸起部滑入該、 °亥 將該第1保持構件與第2保持構 =予狀爪内側以 又俞β筮1仅枝H止了倂什立相勒緊為宜。 又刖述第1保持構件與前述第2保 連結成,以該鉸鍵機構為中心能:係乂鈒鏈機構 連-成能前述勒緊環係介由環保持構件 於該勒緊被在該第2保持構件上以預定尺寸旋 本發明的第2开>態係以具備:第丨 件;及能移動於固定位置與開放位置且/件,弟=持構 環的半導體晶圓電鍍失具;而以 八有扣〇邰的固定 於前述第1保持構件與前$第2保持構件間將丰導 晶圓予以裝卸自如地保持, ]可將半導體 於前述第1保持構件及前述第2 對前述固定環之扣合部為扣脫自”、構件之任一方設置 若前述固定環在固定位置時, j 田别述固定環之扣合部The first current-carrying member is provided at the portion where the first holding member is held, and the outer periphery of the abundant conductor wafer is located near the second holding member to seal the enemy. The first current-carrying member of the holding member and the exposed contact are provided at the first. 1 The second conductive member of the semiconductor wafer electroplating clip with a characteristic is a second aspect of the present invention. To form a raised portion, and the predetermined retaining claw interval of the i-th retaining structure is rotated by a predetermined size so that the raised portion slides into the first retaining member and the second retaining structure = the inside of the preformed claw. It is advisable to have Yu β 筮 1 only branch H to stop it. It is also stated that the first holding member is connected to the second holding device, and the hinge mechanism is centered on the energy: the chain mechanism is connected to-the energy can be tightened by the ring holding member through the ring holding member. The second opening of the present invention is rotated on the second holding member with a predetermined size. The second opening is provided with: the first piece; and the semiconductor wafer which can be moved to a fixed position and an open position, and the piece = the electroplating loss of the semiconductor wafer holding the structural ring. It can be fixed between the first holding member and the former second holding member with eight buckles, and the Fengdao wafer can be detachably held.] The semiconductor can be held in the first holding member and the second The fastening part of the aforementioned fixing ring is self-releasing ", and either one of the components is provided. If the aforementioned fixing ring is in the fixed position, j Tian said the fastening part of the fixing ring

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與前述被扣合部為扣脫自如的扣合, 、、 持構件及前述第2保持構件予以固定,σ將則述第1保 若前述固定環在開放位置時, 則述第"呆持構件與前述第2保持 放於 便刖述第1保持構件及前述第2保持 a、 半導體晶圓電鍍夾具作為另一實 疋侍以開放之 本發明的第3形態為應用上述任1 樣項之半導體曰门 又於本發明的第3形態,係具備能由 實施導:樣曰。 半導體晶圓收容於電鑛夾具並由:容 ίίί :ϊ之電鑛夾具將半導體晶圓收容於晶圓卡'匿的 將收谷有半導體晶圓之前述電鍍夾具浸潰於電鍍槽中 ,電鍍液以對半導體晶圓實行電鍍的電鍍槽部之半導體曰曰 圓電鍍裝置作為另一實施態樣。 曰曰 [發明的較佳實施形態] 以下參照圖面說明本發明的實施態樣。第丨圖,第2 圖,第3A圖及第3B圖係表示本發明之第j形態之半導體晶 圓電鍍夾具之一實施態樣。另以第7A圖,第7β圖,第8 圖,第9圖及第1〇圖表示本發明之第2形態的半導體晶圓電 鍍夾具的一實施態樣。 第1圖為表示本發明中一實施態樣半導體晶圓電鍍夾 具外觀斜視圖。如圖示,本電鍍夾具1〇具備:由板狀電氣The buckle is fastened to the buckled part, and the holding member and the second holding member are fixed. Σ will be described as the first guarantee. When the fixing ring is in the open position, the " The component and the second holding device are described below. The first holding component and the second holding device a. The semiconductor wafer plating jig is another example. The third aspect of the present invention is an application of any one of the above items. The semiconductor gate is in the third aspect of the present invention, and is provided with a guide that can be implemented: The semiconductor wafer is housed in a power ore jig and is contained by: 容 ίίί: The electric power ore fixture holds the semiconductor wafer in a wafer card. The aforementioned electroplating jig containing the semiconductor wafer is immersed in a plating bath and electroplated. As another embodiment, a semiconductor wafer electroplating apparatus for a plating bath portion that performs plating on a semiconductor wafer is used. [Preferred Embodiment of the Invention] Embodiments of the present invention will be described below with reference to the drawings. FIG. 丨, FIG. 2, FIG. 3A and FIG. 3B show one embodiment of the j-shaped semiconductor wafer electroplating jig of the present invention. Figs. 7A, 7β, 8, 9, and 10 show an embodiment of the semiconductor wafer plating jig of the second aspect of the present invention. Fig. 1 is a perspective view showing the appearance of a semiconductor wafer plating fixture according to an embodiment of the present invention. As shown, the electroplating jig 10 includes:

C:\ProgramFiles\Patent\310621.ptd 第 8 頁 580745 五、發明說明(6) 合成樹脂)形成之第1保持構件11,及設有 1保持槿株η * 第2保持構件12係介由鉸鏈機構14與第 端部設把^ί5又^第1保持構件11之反鉸鏈機構14侧 狀之持構件11上面形成有與半導體晶®16略同形 體晶圓16的晶圓收容凹部;又於該晶 將直上面盥兮^周〇卩,以等間隔設置複數個(圖中為4個) 將其上面與該第1保持構件 q Η。又於第2保持槿株為一致的第1通電構件 内f之iU 9 、、 的中央形成較半導體晶圓1 6略小C: \ ProgramFiles \ Patent \ 310621.ptd Page 8 580745 V. Description of the invention (6) Synthetic resin) 1st holding member 11 and 1 holding hibiscus strain η * 2nd holding member 12 is hinged The mechanism 14 and the first end portion are provided with a ^ ί5 and ^ 1 holding member 11 of the inverse hinge mechanism 14. The side holding member 11 is formed with a wafer accommodating recess on the semiconductor wafer 16 which is approximately the same shape as the semiconductor wafer 16; The crystal will be placed on the upper surface ^ week 0 卩, and a plurality of (4 in the figure) are provided at equal intervals, and the upper surface and the first holding member qΗ are provided. In the second current-carrying member that keeps the hibiscus strains consistent, the center of iU 9, f in f is slightly smaller than that of semiconductor wafer 16

Jl iil ^ QW 之周緣邛設上述環狀密封墊13。The above-mentioned ring-shaped gasket 13 is provided on the periphery of Jl iil ^ QW.

,封墊13的剖面形成逆u字狀A 逆U字狀-方的前端部13a接觸於第二構為該 方前端部13b則接觸於半導體晶構件11上面,另 別端成為由第2保持構件12突出預定 j =墊13前端部13a與前端部m間以机 電構件收容孔13c中收容德收容孔13c ’於該通 於上述構造的半導/Λ之/2通電構件18° 11之晶圓收容凹部收容半;在第1保持構件 端部! 3b則::=構件:上面,另-方前 緣部挾持在與第1保持構件11間而將其保持。=半導2 .The cross section of the gasket 13 is formed into an inverse U-shape A and an inverse U-shape. The front end portion 13a of the square is in contact with the second structure, and the front end portion 13b of the square is in contact with the semiconductor crystal member 11, and the other ends are held by the second The member 12 is projected to be j = the pad 13 has a front-end portion 13a and a front-end portion m in which the electro-mechanical component receiving hole 13c receives the German receiving hole 13c. The wafer accommodating recess is accommodating half; at the end of the first holding member! 3b :: = Member: upper surface, and the other side of the leading edge is held between the first holding member 11 and held. = Semiconductor 2.

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晶圓16的表面係露出在第2保持構件12之孔12a内。 第2圖為表示將第2保持構件12重疊於第1保持 上時之第1通電構件17與密封墊13的位置關係圖。如 不,密封墊13之一方前端部l3a接觸於第丨保持構件丨丨上斤 面,另一方前端部13b則接觸於半導體晶圓16上面。, :第2通電構件18為圓柱狀,在其前端面形成有凹構二故 /、剖面成為逆U字狀,其一方之前端部18b則接於露 :體晶圓16上面的導電膜’又以另一前端部18。接觸第 1 電構件17上面的狀態,介由彈簧構件19安裝於第2保 件12上。而第i通電構件17則介由貫穿第i保持構件丨、、稱 電構件20接於外部電極端子(未圖示、導 第3A圖及第3B圖為表示將第2保持構件12重疊於 持構件11上的狀態圖。第3A圖為正面圖,第36圖1則為面 圖;如圖示,將第2保持構件12重疊於第】保持構件丨‘"丨上, 且於鉸鏈機構1 4之反側的邊以夹鉗21挾持。由此, 述半導體晶圓1 6如上述保持於第1保持構件丨丨與密封可1上 間,且可介由第1通電構件17及第2通電構件18', 件2 0確實與半導體晶圓16上面之導電膜導通。由此本 體晶圓16上面的導電膜連接至外部電極端子。 : 第4圖為表示使用上述構造之電鍍夾具1〇的電解 裝置之概略構成圖。圖中,30為電鍍液槽,於該 又 30中安置陽極電極31及保持上述半導體晶圓16 ‘二二二 10。電解電鍍液係介由泵35及過濾器32送入電鍍液=八 内’使該電解電鑛液於電鍍液槽30中溢流而循環。^The surface of the wafer 16 is exposed in the hole 12 a of the second holding member 12. Fig. 2 is a diagram showing a positional relationship between the first current-carrying member 17 and the gasket 13 when the second holding member 12 is superposed on the first holding member. If not, one of the front end portions 13a of the gasket 13 is in contact with the upper surface of the first holding member, and the other front end portion 13b is in contact with the semiconductor wafer 16. : The second current-carrying member 18 is cylindrical, and a concave structure is formed on the front end surface thereof, and the cross-section is reverse U-shaped, and one front end portion 18b is connected to the exposed conductive film on the bulk wafer 16 '. Yet another front end portion 18. The state in contact with the upper surface of the first electric member 17 is attached to the second holder 12 via the spring member 19. The i-th current-carrying member 17 is connected to the external electrode terminal through the i-th holding member 丨, and the electric member 20 is connected to the external electrode terminal (not shown in FIG. 3A and FIG. 3B). State diagram on member 11. Figure 3A is a front view, Figure 36 is a plan view; as shown, the second holding member 12 is superimposed on the first holding member 丨 '", and on the hinge mechanism The side on the opposite side of 14 is held by the clamp 21. As a result, the semiconductor wafer 16 is held by the first holding member 丨 and the seal 1 as described above, and may be interposed between the first current-carrying member 17 and the first 2 The current-carrying member 18 ', piece 20 is indeed in conduction with the conductive film on the semiconductor wafer 16. The conductive film on the body wafer 16 is connected to the external electrode terminal. Figure 4 shows the plating fixture 1 using the above structure 〇A schematic configuration diagram of an electrolytic device. In the figure, 30 is a plating solution tank, and the anode electrode 31 is placed in the 30 and the semiconductor wafer 16 ′ 22 is held. The electrolytic plating solution is passed through a pump 35 and a filter. The electroplating solution is sent into the plating device 32 so that the electrolytic power mineral liquid overflows in the electroplating solution tank 30 Circulation. ^

580745 五、發明說明(8) 於陽極電極31與上述電鑛夹具} 〇之導電構 :子33分別接於直流電源34之+端與一端,以對二= k電流在半導體晶圓1 6表面形成電解電鍍膜。 、、。直 及第鍍夾具係將通電構件分為第1保持構件U 及第2保持構件12(作為第丨通電構件17及第2通電構 文裝,將收容於半導體晶圓1 6的凹部及作為配線的導 件20安裝於第1保持構件丨丨,而於第2保持構件,僅 :為通:栓的第2通電構件18,因此,半導體晶圓16的裝、 者作業容易。又將做為通電栓的第2通電部件18剖 ^ 為逆u字形狀,並介由彈簧構件19安裝於第2保持構件, 該逆u字狀的前端接觸於第丨通電構件17與半導體晶圓η之 導電膜雙方’因此’例如第5圖所示即使於半導體晶圓Μ 上面與第1通電構件17上面間有段差的狀態時,亦可 通電於半導體晶圓的導電膜。 第6圖為表示鉸鏈機構14的示例圖,係將鉸鏈接頭Ha 安裝於第1保持構件11,扣合該鉸鏈接頭14a之鉸鏈栓Hb 則安裝於第2保持構件1 2。 又於上述構造的電鍍夾具10中,使第2通電構件18介 由彈簧構件19安裝於第2保持構件12,但不限於使用彈簧 構件1 9 ’只要是彈性體構件即可。 ' 第7A圖,第7B圖及第8圖為表示本發明之半導體晶圓 電鍍夹具的外觀構成斜視圖。如圖示,本電鍍夹具11〇具 備··有板狀的第1保持構件11 1 ;安裝有環狀密封墊丨丨3的第 2保持構件11 2,及勒緊環11 4。 C:\ProgramFiles\Patent\310621.ptd 第 11 頁 580745 五、發明說明(9) 、,第1保_持構件ill係由電氣絕緣材料(如,合成樹脂)所 成i如圖示為一矩形狀板狀體,於其中央部形成收容半導 體aa圓1 1 6的晶圓收容凹部,於該晶圓收容凹部外周近傍 以等間隔設複數個(圖中為8個)第1通電部件丨丨?,並上面 與該第1保持構件111的上面略為一致。又於第丨通電構件 117外侧以等間隔設複數個(圖中為8個)逆L字狀時爪12〇。 第2保_持構件112由電氣絕緣材料(如,合成樹脂)所 胁,如圖不,係以環狀的環部112&與直線狀支持部一 ^形成。密封墊113係由剖面為逆倒11字狀橡膠等彈性體電 絕緣材料形成,如圖示係貼於第2保持構件112之環部 = 面。又於密封墊113之剖面逆11字狀的兩前端部間 以等間隔設複數個(圖中為8個)通電構件收容孔丨丨仏,.,於 收容孔1133内收容如後述第2通電構件118(參 ώ二=環Π4外周以預定間隔形成複數個(圖中為8個) 個)的^鐘道丨並类於其上面以預定間隔形成複數個(圖中為3 ΐ 32143。於該旋轉導引溝U4a内貫穿設在 ,保^件112之環和2a上面之等間隔環保持構件 ^ 。=此使勒緊環m能在第2保持構件112上面轉動(滑 動):亦即勒緊環11 4係以貫穿旋轉導引溝i】4 a之複數個 箱—Λ3個)的環保持構件119的導引而於環部112a上面做 =疋量的移動。第2保持構件112的支持部丨丨託一端由鉸鏈 機構115旋轉自如地連'•結於第丨保持構件iu端邙。 於上述構成的電鍵夾具11G中,將第2保持構件ιι2介.580745 V. Description of the invention (8) The conductive structure of the anode electrode 31 and the above-mentioned electric mining fixture} 〇: The sub-33 is connected to the + terminal and the one end of the direct-current power supply 34, respectively, so that a current of 2 = k on the surface of the semiconductor wafer 16 An electrolytic plating film is formed. ,,. The straight and first plating jig divides the current-carrying members into the first holding member U and the second holding member 12 (installed as the first current-carrying member 17 and the second current-carrying structure, and the recesses accommodated in the semiconductor wafer 16 and the wiring The guide 20 is mounted on the first holding member, and on the second holding member, only the second current-carrying member 18 is connected to the plug. Therefore, the mounting and operation of the semiconductor wafer 16 is easy. It will also be used as a current-carrying device. The second energized member 18 of the plug is inversely U-shaped, and is mounted on the second holding member via a spring member 19. The inverse u-shaped tip is in contact with the conductive film 17 and the conductive film of the semiconductor wafer η. Both parties therefore "for example," as shown in FIG. 5, even when there is a step between the upper surface of the semiconductor wafer M and the first conductive member 17, the conductive film of the semiconductor wafer can be energized. FIG. 6 shows the hinge mechanism 14 The example diagram is that the hinge head Ha is mounted on the first holding member 11, and the hinge pin Hb that is engaged with the hinge head 14a is mounted on the second holding member 12. In the electroplating jig 10 having the above structure, the second The current-carrying member 18 is attached to the second housing via a spring member 19 The member 12 is not limited to the use of a spring member 19 'As long as it is an elastic member.' FIG. 7A, FIG. 7B, and FIG. 8 are perspective views showing the external configuration of a semiconductor wafer plating jig of the present invention. As shown, the plating jig 110 includes a plate-shaped first holding member 11 1, a second holding member 11 2 with an annular gasket 丨 3, and a tightening ring 11 4. C: \ ProgramFiles \ Patent \ 310621.ptd Page 11 580745 V. Description of the Invention (9) The first retaining member ill is made of an electrically insulating material (eg, synthetic resin) as a rectangular plate-like body as shown in the figure. A wafer accommodating recess for accommodating semiconductors aa circle 1 1 6 is formed at a central portion thereof, and a plurality of (8 in the figure) first energizing members are arranged at equal intervals near the outer periphery of the wafer accommodating recess, and the top and The upper surface of the first holding member 111 is slightly consistent. A plurality of (eight in the figure) inverse L-shaped claws 12 are arranged at regular intervals on the outside of the first conducting member 117. The second holding member 112 is made of electrical It is threatened by an insulating material (eg, synthetic resin), as shown in the figure, with a ring portion 112 & and A linear support portion is formed. The gasket 113 is formed of an elastic electrical insulating material such as an inverted 11-shaped rubber in cross section, and is attached to the ring portion of the second holding member 112 as shown in the figure. A plurality of (8 in the figure) conductive member receiving holes are provided between the two front ends of the section 113 in the shape of an inverse 11 at an equal interval. The second conductive member 118 (see later) is received in the receiving hole 1133 (see二 二 = Circle Π4 The outer periphery forms a plurality of (eight in the figure) ^ bells at a predetermined interval, and a plurality of them are formed on it (3 预定 32143 in the figure) at a predetermined interval. Inside the rotating guide groove U4a, a ring holding member ^ provided on the ring of the retaining member 112 and the equally spaced ring above 2a are penetrated. = This enables the tightening ring m to rotate (slide) on the second holding member 112: that is, the tightening ring 11 4 is a ring holding member that passes through the rotating guide groove i] 4 a of a plurality of boxes-Λ 3) The guidance of 119 makes a large amount of movement on the ring portion 112a. The supporting portion of the second holding member 112 is rotatably connected by the hinge mechanism 115 to the end of the second holding member iu. In the key clamp 11G having the above configuration, the second holding member ιι2 is introduced.

580745 五、發明說明(10) · " ----- 由鉸鏈機構115轉動並重疊於收容半導體晶圓116之上述晶 圓收容凹_部的第1保持構件丨丨i上,再將勒緊環丨〗4推向箭 頭A的所示方向,以勒緊環114移動預定量,使凸起部u4b 滑入逆L字狀爪1 2 0内侧,由此何使第}保持構件2i與第2 保持構件1 1 2相互勒緊。 η 將上述第2保持構件112介以鉸鏈機構115轉動而重合 於第1保持構件111上以勒緊環114勒緊狀態時,係如第9圖 所示,密封墊113之剖面逆υ字狀的一方前端部13b擋接於 f容在第1保持構件1丨丨凹部的半導體晶圓緣部上面,另方 别端部11 3c則擋接於其外側之第1保持構件丨丨1上面。 /第2通電構件Π8為導電材料所成的圓柱體,係於前端 為形成設溝部11 8 a形成剖面為逆υ字狀的形狀,其後端則 介由彈簧構件121安裝於密封墊ι13或第2保持構件112,如 ^述’將第2保持構件11 2重疊於第1保持構件丨n時,係如 IM0圖所示,以第2通電構件118—方的前端部ii8b接觸於 ,導體晶圓116上的導電膜,而另方前端部118〇:則擋接於 第1通電構件117。又該第1通電構件117係連接於貫穿第1 保持構件111内部的導電體122,導電體122係連接於未圖 示之外部電極。 本實施態樣的電鍍夾具如上述,係於勒緊環114外周 以所定間隔形成凸起部11 4b,以轉動勒緊環1 1 4使凸起部 11 4b滑入一體設在第1保持部丨丨1逆[字狀的爪丨2 〇内侧,構 成將第1保持構件111與第2保持構件11 2勒緊的狀態,因 此’能於密封墊113施加均等面壓,獲得良好密封性。又580745 V. Description of the invention (10) · " ----- The first holding member 丨 i which is rotated by the hinge mechanism 115 and overlaps with the above-mentioned wafer accommodating recess 116 for accommodating the semiconductor wafer 116, and The tightening ring 丨〗 4 is pushed in the direction shown by the arrow A, and the tightening ring 114 is moved by a predetermined amount, so that the convex portion u4b slides into the inside of the inverse L-shaped claw 1 2 0, thereby making the first holding member 2i and The second holding members 1 1 2 are tightened to each other. η When the second holding member 112 is rotated through the hinge mechanism 115 to overlap with the first holding member 111 and tightened by the tightening ring 114, the cross section of the gasket 113 is reversed as shown in FIG. 9 One of the front end portions 13b is blocked on the edge of the semiconductor wafer f received in the recessed portion of the first holding member 1 丨, and the other end portion 113c is blocked on the first holding member 丨 1 outside. / The second current-carrying member Π8 is a cylinder made of a conductive material. The front end is formed with a groove portion 11 8 a and the cross-sectional shape is inverse. The rear end is mounted on the gasket 13 through a spring member 121. When the second holding member 112 overlaps the second holding member 112 as described above, as shown in FIG. IM0, the second holding member 112 is in contact with the front end portion ii8b of the second current-carrying member 118 and the conductor. The conductive film on the wafer 116, and the other front end portion 118o: the first conductive member 117 is blocked. The first current-carrying member 117 is connected to a conductor 122 penetrating inside the first holding member 111, and the conductor 122 is connected to an external electrode (not shown). As described above, the plating fixture of this embodiment is formed on the outer periphery of the tightening ring 114 at a predetermined interval to form the convex portions 11 4b, and the rotating tightening ring 1 1 4 slides the convex portions 11 4b into the first holding portion.丨 丨 1 Inverse [character claws 丨 2 〇 The inner side is configured to tighten the first holding member 111 and the second holding member 112, so that an even surface pressure can be applied to the gasket 113 and good sealing performance can be obtained. also

580745580745

Π二= ☆貫穿第1保持構件111内部之導 電體122 ’該導電艘122則連接於未圖示之外部電極 導 yio圖之實施態樣中,第2保持 =構件m時,第2通電構件118之一方前端部U8b = +導體晶圓116上面的導電膜,另方前端8c 第1通電構件117。 知接於 然而,可去除設在第1保持構件lu之第丨通電構件 117。如第11圖所示,使通電構件123僅接觸半導體晶圓 116上面之導電膜,亦可於第2保持構件112設連接外部電 極的導電體122,將導電體122介由彈簧丨21連接通電構件 123。 又,第7A圖,第7B圖,第8圖及第g圖所示實施態樣的、 電鍍夾具110亦可用於第4圖所示的電鍍裝置。 本發明之半導體晶圓電鍵夾具可適用於半導體晶圓的 電鍍裝置。 浸潰式半導體電鍍裝置須將半導晶圓裝於夹具,該作 業習用上為由手工實行。然而隨著晶圓大形化,其手工作 業的困難度顯著增加,因此,對應於8对以上的電鍍裝置 則被要求有全自動的半導體電鍍裝置,故於半導體電鍍裝 置係將收容晶圓的晶圓卡匣置於所定位置,僅按啟動鈕, 即可自動進行晶圓電鍍,然後將晶圓枚回原來的卡匣内。 於第12圖及第13圖表示玎適恰使用本發明半導體晶圓 的電鍍夹具之半導體電鍍裝置的一實施態樣。第12圖中半 導體電鍍裝置200具備有:用以搬入收容有半導體晶圓之晶Π 二 = ☆ Conductor 122 penetrating inside the first holding member 111 'The conductive boat 122 is connected to an external electrode guide yio diagram (not shown). In the second embodiment, when the second holding = member m, the second current-carrying member One of the front end portions U8b of the 118 is a conductive film on the + conductor wafer 116, and the other front end 8c is the first current-carrying member 117. It is known that the current-carrying member 117 provided in the first holding member lu may be removed. As shown in FIG. 11, the current-carrying member 123 contacts only the conductive film on the semiconductor wafer 116, and the second holding member 112 may be provided with a conductive body 122 connected to an external electrode, and the conductive body 122 is connected to the current through a spring 21 Component 123. 7A, 7B, 8 and g, the plating jig 110 can also be used in the plating apparatus shown in FIG. 4. The semiconductor wafer key holder of the present invention can be applied to a plating device for a semiconductor wafer. The immersion type semiconductor electroplating device has to mount a semiconductor wafer in a jig. This operation is conventionally performed manually. However, as wafers become larger, the difficulty of manual operations increases significantly. Therefore, automatic plating equipment corresponding to more than 8 pairs of plating equipment is required. Therefore, semiconductor plating equipment The wafer cassette is placed at a predetermined position, and the wafer can be automatically plated by simply pressing the start button, and then the wafers are returned to the original cassette. Figs. 12 and 13 show an embodiment of a semiconductor electroplating apparatus using a plating jig of a semiconductor wafer according to the present invention. The semiconductor plating apparatus 200 in FIG. 12 is provided with a wafer for carrying in a semiconductor wafer.

C:\Program Files\Patent\310621.ptd 第14頁 580745C: \ Program Files \ Patent \ 310621.ptd Page 14 580745

圓卡匣搬入口 201 ; 盤202 ;訊號塔2〇3 箱 2 04。 用以控制裝卸台,電鍍槽部等的控制 以及與控制盤202成電氣連接之電裝 於第13圖中表示之半導體電鑛裝置具有裝卸⑼〇及 出+導體3曰圓,將其裝卸自如地固定於電鍍夾且,並 導?晶圓予以裝卸自如固定之電鍍夾具中取出半導 曰曰圓收谷於晶圓卡匣。由於使用本發明的電鍍夾具,可 本卸台SB。一方面於電鍍槽部240亦可將收容有 +導體曰曰圓的電鍍夾具浸潰於電鍍槽中之電鍍液中對半導 體晶圓進行電鍍作業。 亦即於本發明的第3形態,可提供具有能由收容半導 ,晶圓之晶圓卡匣取出半導體晶圓,收容於電鍍夾具,亦 :由收谷半導體晶圓的電鍍夾具將半導體晶圓取出收容至 晶圓卡匣的裝卸台;以及能將收容半導體晶圓之前述電鍍 夹具浸潰於電鍍槽中電鍍液以對半導體晶圓進行電鍍之電 鍍槽部的半導體晶圓電鍍裝置。 卸台210可配置置放收容晶圓之圓卡匣用枱部212,晶 圓搬送機械人216,晶圓定心裝置(wofer c〇ntering)218 ,及,轉乾燥裝置219❶於枱部212宜配置有檢知晶圓卡昆 内=卩疋否具有晶圓之感測裝置214。感測裝置具備於檢知 晶圓卡E内部預定位置是否具有晶圓之感測器;及用以移 動感測器的驅動裝置。典型感測器可移動於上下。晶圓搬 送機械人216能自晶圓卡匣取出晶圓搬至夾具裝著台。亦The round cassette is moved into 201; plate 202; signal tower 203; box 2 04. It is used to control the loading and unloading table, the plating tank part, etc., and the electrical equipment electrically connected to the control panel 202. The semiconductor power mining device shown in FIG. The ground is fixed to the plating clip The wafers can be loaded and unloaded, and the semiconductors can be removed from the fixed electroplating jig. By using the plating fixture of the present invention, the table SB can be unloaded. On the one hand, the electroplating bath 240 can also be immersed in the electroplating bath in the electroplating bath, and the semiconductor wafer can be electroplated. That is, in the third aspect of the present invention, it is possible to provide a semiconductor wafer that can be taken out from a wafer cassette containing semiconductors and wafers and stored in a plating jig. A semiconductor wafer electroplating device for taking out a loading and unloading stage accommodated in a wafer cassette; and a semiconductor wafer plating device capable of dipping the aforementioned plating jig containing semiconductor wafers into a plating bath in a plating bath to plate the semiconductor wafer. The unloading station 210 may be provided with a wafer cassette receiving unit 212, a wafer transfer robot 216, a wafer centering device 218, and a transfer drying device 219 placed on the table portion 212. A sensing device 214 is provided to detect whether the wafer has a wafer core. The sensing device includes a sensor for detecting whether a wafer is present at a predetermined position inside the wafer card E, and a driving device for moving the sensor. Typical sensors can be moved up and down. The wafer transfer robot 216 can remove the wafer from the wafer cassette and transfer it to the jig mounting table. also

580745 五、發明說明(13) 可由夾具裝著台將晶圓搬送並收容於晶圓卡匣内。該晶圓 搬送機械人216最好能於旋轉方向動作。旋轉乾燥裝置219 係用於乾燥已電鍍的半導體晶圓。 於裝卸台210可配置於其上面配置有一個或複數晶圓 裝卸台222a,22 2b之台部220。該晶圓裝卸台222a,22 2b 可分別移動於晶圓裝卸台222b ’222a的位置。又於晶圓裝 卸台222b上部配置用以裝著晶圓於夾具的夾具裝著裝置。 夾具裝著裝置的一實施態樣係如第14A圖及第14B圖所示。 於裝卸台210以配置有確認晶圓與夾具是否成電氣連接之 通電確認裝置(未圖示)為宜。 半導體電鍍裝置200可配置用以收存夾具232的夾具存 放架230。於第13圖所示的實施態樣中,係於夾具存放架 230收存縱向2列,各列為13枚的夾具232。央具存放架230 宜設用以判別有無夾具的感測器。 於電鍍槽部240可配置電鍍槽2 50,水洗槽260及乾燥 槽270。電鍍槽250以具有複數隔間(compartment)252為 宜,於該各隔間中可將分別收容有1枚晶圓的夾具浸潰於 電鍍液中,對其進行電鍍。亦即宜於在各個隔間具備有夾 具插入部,對夾具的通電裝置及陽極。可使與晶圓對向之 陽極露出面應與晶圓為同心之圓狀。攪拌裝置258可於複 數隔間使用一個攪拌裝置。例如將攪拌棒平行於晶圓面驅 動,亦可將攪拌棒驅動於兩個隔間。使攪拌棒的移動速度 為可變亦可。 在水洗槽2 6 0中使純水由下往上流,以洗淨夾具及夾580745 V. Description of the invention (13) The wafer can be transported and stored in the wafer cassette by the jig loading table. The wafer transfer robot 216 is preferably capable of operating in a rotation direction. The spin-drying device 219 is used to dry plated semiconductor wafers. The loading and unloading stage 210 may be provided with a stage portion 220 on which one or a plurality of wafer loading and unloading stages 222a and 22 2b are arranged. The wafer loading and unloading tables 222a and 22 2b can be moved to positions of the wafer loading and unloading tables 222b and 222a, respectively. A jig mounting device for mounting a wafer in a jig is arranged on the wafer loading and unloading table 222b. An embodiment of the fixture mounting device is shown in Figs. 14A and 14B. It is preferable to arrange a power-on confirmation device (not shown) for confirming whether the wafer and the jig are electrically connected to the loading / unloading station 210. The semiconductor plating apparatus 200 may be provided with a jig storage rack 230 for storing the jig 232. In the embodiment shown in FIG. 13, two rows in the longitudinal direction are stored in the clamp storage rack 230, and each row includes 13 clamps 232. The central gear storage rack 230 should be provided with a sensor for judging the presence or absence of a fixture. A plating tank 250, a water washing tank 260, and a drying tank 270 may be disposed in the plating tank section 240. The plating tank 250 is preferably provided with a plurality of compartments 252. In each of the compartments, a jig containing one wafer can be immersed in a plating solution and electroplated. That is, it is suitable to have a clamp inserting part, a current supply device for the clamp and an anode in each compartment. The anode exposed surface facing the wafer should be concentric with the wafer. The stirring device 258 may use one stirring device in a plurality of compartments. For example, the stirring rod can be driven parallel to the wafer surface, or the stirring rod can be driven between two compartments. It is also possible to change the moving speed of the stirring rod. Pure water is flowed from bottom to top in the water washing tank 2 60 to clean the jigs and clamps.

C:\ProgramFiles\Patent\310621.ptd 第 16 頁 580745 五、發明說明(14) 〜 具内部的晶圓電鍍面為宜。又以具備快速傾卸機能以提高 洗淨效果為宜。 ° 乾燥槽270係用以乾燥自水洗槽260取出之夾具及夾耳 内部的晶圓。乾燥槽270可設計成將氣體吹進夾具以吹落 水滴亦可。 其次,將夾具搬送至夾具裝卸台222a,222b,由夾具 取出晶圓,將晶圓收存於晶圓卡匣。 、 可由夾具搬送機械人於搬送徑路280,移動搬送炎具 於裝卸台210及電鍍槽部240間。 在裝卸台210的天花板部分設未圖示的HEPA過濾器, 將清淨空氣往下吹送。由此可使從電鍍槽25〇蒸發的蒸氣 離開裝卸台21 0。 ^ μ 於異常發生時,半導體電鍍裝置在輸出警報訊號及顯 示異常後,能自動的停止為宜。唯以輕度異常時,則可 電至電鍍作業終了時較宜。 ^ 半導體晶圓電鍍裝置的操作方法如下:首先,自收存 晶圓之晶圓卡匣取出晶圓,組裝於電鍍夾具。上述製程包 含:由晶圓卡匣取出晶圓的工序,及將夾具23 2由夾且存^ 架230搬至晶圓裝卸台222b工序。 八 更詳細言之,將晶圓卡匣安置裝載台之預定位置。 按下啟動鈕後,由夾具搬送機械人(未圖示)由失具存放 230取出夾具2 32置放於晶圓裝卸台22 2b上。一方面由晶^ 搬送機械人21 6由·晶圓卡匣將晶圓取出,置放於晶圓9 台222b的夾具上。 iC: \ ProgramFiles \ Patent \ 310621.ptd Page 16 580745 V. Description of the Invention (14) ~ It is better to have a wafer plating surface inside. It is advisable to have a quick dumper to improve the cleaning effect. ° Drying tank 270 is used to dry the wafers taken out of the jig and clamp ears taken out from the water washing tank 260. The drying tank 270 may be designed to blow gas into the jig to blow off water droplets. Next, the jig is transferred to the jig loading and unloading tables 222a and 222b, the wafer is taken out by the jig, and the wafer is stored in the wafer cassette. The robot can be transported by a jig to the transport path 280, and the inflammation tool can be moved between the loading station 210 and the plating tank 240. A not-shown HEPA filter is installed on the ceiling portion of the loading and unloading base 210 to blow clean air downward. As a result, the vapor evaporated from the plating tank 250 can leave the loading and unloading station 210. ^ μ When an abnormality occurs, it is advisable for the semiconductor plating device to automatically stop after outputting an alarm signal and displaying an abnormality. Only in the case of minor abnormalities, it is better to apply electricity to the end of the plating operation. ^ The operation method of the semiconductor wafer plating device is as follows: First, the wafer is taken out from the wafer cassette in which the wafer is stored, and assembled in a plating jig. The above process includes a process of taking out a wafer from a wafer cassette, and a process of moving the jig 23 2 from the clamp and storage rack 230 to the wafer loading and unloading station 222 b. In more detail, the wafer cassette is set at a predetermined position on the loading table. After the start button is pressed, a jig transfer robot (not shown) removes the jig 2 32 from the lost tool storage 230 and places it on the wafer loading and unloading table 22 2b. On the one hand, the wafer is transported by the robot 21, and the wafer is taken out by the wafer cassette, and placed on the 9 wafer 222b jigs. i

580745 五、發明說明(15) 一 其次,由夾具裝著裝置在晶圓裝卸台222b上將晶圓安 置於夾具内。然後將載有裝著晶圓之夾具晶圓裝卸台222b 移向晶圓裝卸台222a。再次以夹具搬送機械人(未圖示)將 晶圓裝卸台222a上之裝有晶圓的夾具搬送至電鍍槽25〇中 的隔間2 5 2,進行預定時間的通電以實行電鑛。 電渡終了後,由夾具搬送機械人將夾具搬運至水洗槽 260,水洗後於乾燥槽270内吹送氣體去除水滴。由夾具搬 送機械人將夾具搬送至夾具裝著台。於夾具裝著a /曰' 自夾具中取下。然後將晶圓搬送至旋轉乾燥機219中的旋 轉乾燥槽。夾具則搬送至儲存部23 0收存。晶圓係於旋轉 乾燥槽中進行旋轉冲洗,最後以高速旋轉使其乾燥。乾燥 後的晶圓係收存於原來晶圓卡匣,在完成全部晶圓處理 時’鳴放處理終了的蜂鳴器而裝置則成為待機狀態。 於第14A圖表示夾具裝著於裝置的一實施態樣夾具 裝著裝置300,具有:未圖示的驅動裝置;可於軸方向往復 運動並可旋轉的軸部302 ;固定於轴部3〇2的圓盤3〇4 ;及 固定在圓盤3 04之圓盤3 06。而於圓盤3〇6設有可將電錢夹 具予以裝卸自如地扣合之扣合裝置。本實施態樣中之該扣 合裝置為複數的栓3 10a,316b。 ~ 如第14B圖所示,由驅動裝置使軸部3〇2向下移動時, 該栓310a,310b則分別插入電鍍夾具320的凹部322a, 322b中。然後由驅動裝置使軸302向順時鐘方向或向逆時 鐘方向旋轉一定角度時,由栓310a,310b將電鍍夾具μ 〇 旋轉夾具3 20於一定角度將内部之半導體晶圓勒緊固定。580745 V. Description of the invention (15) First, the wafer is placed in the jig on the wafer loading and unloading table 222b by a jig loading device. Then, the wafer loading and unloading stage 222b on which the wafer is loaded is moved to the wafer loading and unloading stage 222a. The jig transfer robot (not shown) transfers the wafer-equipped jig on the wafer loading and unloading station 222a to the compartment 2 5 2 in the plating tank 25 again, and conducts electricity for a predetermined time to perform power mining. After the electric transfer is completed, the jig transfer robot transfers the jig to the water washing tank 260, and blows gas in the drying tank 270 after water washing to remove water droplets. The gripper transfer robot transfers the gripper to the gripper mounting table. Remove the jig from the jig with a / say '. The wafer is then transferred to a rotary drying tank in a rotary dryer 219. The jig is transferred to the storage section 230 and stored. The wafer is spin-washed in a spin-drying tank and finally dried at high speed. The dried wafer system is stored in the original wafer cassette, and when all wafer processing is completed, the buzzer is released and the device is in a standby state. FIG. 14A shows an embodiment of the fixture mounting device. The fixture mounting device 300 includes: a driving device (not shown); a shaft portion 302 that can reciprocate in the axial direction and can be rotated; and is fixed to the shaft portion 30. 2 of the disk 3 04; and the disk 3 06 fixed to the disk 3 04. A fastening device capable of attaching and detaching the electric money clips freely is provided on the disc 306. The fastening device in this aspect is a plurality of bolts 3 10a, 316b. ~ As shown in FIG. 14B, when the shaft portion 30 is moved downward by the driving device, the bolts 310a and 310b are inserted into the recesses 322a and 322b of the plating jig 320, respectively. Then, when the driving device rotates the shaft 302 in a clockwise or counterclockwise direction by a certain angle, the bolts 310a, 310b rotate the plating fixture μ 〇 and rotate the fixture 3 20 at a certain angle to tightly fix the internal semiconductor wafer.

580745 五、發明說明(16) 將栓310 之後,由驅動裝置,使轴部3〇2向上方移動 310b由電鍍夾具取出。 聲置電之鍵/Λ320係如第8圖之實施態樣時,當夹具裝著 移動時,栓3i°a,3m則插入配置有 持構件119的溝内。然後於栓31〇a,31〇b旋轉一定的 j x時。由栓31〇a,310b推壓環保持構件119, 114勒緊而使半導體晶圓固定。 以勒緊裱 使電:相反的操作,則可用夾具裝著裝置300 具32G之勒緊環114旋轉於相反方向,以開啟關閉 如上述,若依本發明可獲得下述優異效果。 容易如本發明的第丨形態’可使半導體晶圓Μ的裝著作業 一方面形成一逆’該逆u字狀前端部的 圓夷®Γ持表面,另方前端部則接於半導體晶 二通Λ構件則介由彈性體材料安裝於第電 構化早間,並且將通電接觸部以密封墊完全密封。 Χϋ第2通電構件侧面成一則 端跨過設在第1保持構件之第1 Λ f U子狀别 導體晶圓面的導電膜,介由彈 ^二笸之露出半 件’因此係以確實與半導體=第2保持構 壓於發Λ的第Π2形態,係使用勒緊環將第2保持構件^ 厘、第1保持構件,因此對密封塾能施加均等壓力,使得 m 第19頁 C:\Program Files\Patent\31〇621.ptd 580745 五、發明說明(17) 密封性良好 又因凸起部係使用一種L字狀的爪,因此進行密封時 的作業極為容易。 再則使用以鉸鏈機構為中心之開閉構成,因此使得第 1保持構件與前述第2保持構件的定位容易,。 又因係使勒緊環能於該第2保持構件上旋轉所定的尺 寸的構成,因此勒緊環與爪的定位容易而作業性良好。 L圖面的簡單說明] 具外Γ斜圖視表圖示本發明中一實施態樣的半導體晶圓電鑛夹 且夕ί =圖表不本發明中一實施態樣的半導體晶圓電鍍夾 盥=2保持構件重疊於第i保持構件上時的第i通 與岔封墊之位置關係剖面說明圖。 午 具的表示本發明中一實施態樣的半導體晶圓電鑛夹 具的表示本發明中-實施態樣的半導體晶圓電鍍夹 裝置Γ概1表^本圖發財另—實㈣樣的半導體電解電鑛 第5圖表示本發明中另一實施態樣的半 夾具之第2保持構件重疊於第1俘拷播 日日電鑛 件與密封塾之位置關:剖面第J =構件上時的第1通電構 第6圖表示鉸鏈機構之實施態樣剖面圖。 第7Α圖表示本發明中另-實施態樣的半導體晶圓電鍵. 580745 五、發明說明(18) 夾具的外觀斜視圖,並係表苴 視圖。 /、笫1保持構件開啟時的斜 第7β圖表一示第7A圖中B部份的放大圖。 第8圖表不本發明中另一實施形態 夾具的外觀斜視圖,並係表示第 曰曰圓電鍍 閉時的斜視圖。 保持構件為關 第9圖表示第8圖中"剖面的剖面圖。 第1(),表示於壓緊第!通電構件與第2 關係之一態樣的剖面圖。 稱件之位置 第11圖表示於壓緊時通電構 係的另一態樣剖面圖。 守瓶日日圓之位置關 圖 第12圖表示半導體晶圓電鍍裝置之-實施態樣側面 圖 第13圖表示半導體晶圓錢裝置之—實施態樣平 面 第UA圖表示夾具裝置之—實施態樣剖面圖。 圖 第14Β圖表示半導體晶圓電鍍夾具之一實施態樣剖面 [符號的簡單說明] 10 夾具 12 第2保持構件 13 密封墊 13c 收容孔 14a 鉸鏈接頭 11 第1保持構件 12a 孔 1 3 a、1 3 b前端部 14 鉸鏈機構 14b 鉸鏈栓 C:\ProgramFiles\Patent\310621.ptd 第 21 頁 580745580745 V. Description of the invention (16) After the bolt 310 is moved, the shaft portion 302 is moved upward by the driving device 310b and taken out by the plating fixture. When the acoustic key / Λ320 is implemented as shown in FIG. 8, when the fixture is moved, the bolt 3i ° a, 3m is inserted into the groove where the holding member 119 is arranged. Then when the plugs 31a, 31b rotate a certain j x. The ring holding members 119 and 114 are pressed by the pins 31a and 310b to tighten the semiconductor wafer. Tightening the frame for electricity: In the opposite operation, the fixture 300 can be used to mount the device with a 32G clamping ring 114 rotating in the opposite direction to open and close. As mentioned above, according to the present invention, the following excellent effects can be obtained. As easy as the first aspect of the present invention, the mounting industry of semiconductor wafers M can form a reversed "Yinyi®" holding surface of the inverse u-shaped front end, and the other front end is connected to the semiconductor crystal. The through-member is installed in the first electrochemical morning via an elastomer material, and the energized contact portion is completely sealed with a gasket. ▶ The side of the second current-carrying member forms a conductive layer on the side of the first Λ f U sub-type conductor wafer provided on the first holding member, and a half of the conductive film is exposed through the elastic element ^. Semiconductor = the second holding structure of the second holding structure that is pressed against the hairline Λ. It uses a tightening ring to place the second holding member ^ centimeters and the first holding member. Therefore, an equal pressure can be applied to the seal, so that m page 19 C: \ Program Files \ Patent \ 31〇621.ptd 580745 V. Description of the invention (17) The seal is good and the convex part uses an L-shaped claw, so the operation during sealing is extremely easy. Furthermore, since the opening and closing structure centered on the hinge mechanism is used, positioning of the first holding member and the second holding member is facilitated. Since the tightening ring can be rotated on the second holding member by a predetermined size, the tightening ring and the claw can be easily positioned and the workability is good. Brief description of the L plane] An external Γ oblique view is a diagram illustrating a semiconductor wafer power ore clip according to an embodiment of the present invention. The diagram is not a semiconductor wafer electroplating clip according to an embodiment of the present invention. = 2 Explanatory diagram of the positional relationship between the i-th pass and the branch seal when the holding member is superposed on the i-th holding member. The representation of the semi-conductor wafer wafer mining fixture according to one embodiment of the present invention is shown in the table below. The outline of the present invention-the embodiment of the semiconductor wafer electroplating clamp device is shown in the table. Figure 5 of the power plant shows the second holding member of the semi-clamp in another embodiment of the present invention. The second holding member overlaps the position of the first captured copy of the Japan-Japan power plant and the seal. The section J = the first when the member is on the member. Fig. 6 shows a sectional view of an embodiment of the hinge mechanism. FIG. 7A shows another embodiment of the semiconductor wafer key of the present invention. 580745 V. Description of the invention (18) An external oblique view of the jig, and is a table view. /, 笫 1 when the holding member is opened The 7β diagram shows an enlarged view of part B in FIG. 7A. Fig. 8 is a perspective view showing the external appearance of the jig according to another embodiment of the present invention, and is a perspective view showing the closed state of the first round plating. The holding member is closed. Fig. 9 is a cross-sectional view showing the " section in Fig. 8. The first (), expressed in pressing down! Sectional view of one aspect of the current-carrying member and the second relationship. Position of the weighing member Fig. 11 is a sectional view showing another aspect of the energized structure when pressed. Positional diagram of Moribo Yen position Figure 12 shows the side view of the implementation of the semiconductor wafer plating device Figure 13 shows the implementation of the semiconductor wafer money device-flat surface of implementation Sectional view. FIG. 14B shows a cross section of an embodiment of a semiconductor wafer plating jig [simple description of symbols] 10 jig 12 second holding member 13 seal 13c receiving hole 14a hinge joint 11 first holding member 12a hole 1 3 a, 1 3 b front end 14 hinge mechanism 14b hinge bolt C: \ ProgramFiles \ Patent \ 310621.ptd page 21 580745

18a 凹構 19 彈簧構件 21 夾钳 31 陽極電極 33 外部電極端+ 35 泵 111 第1保持構件 112a 環部 113 密封墊 113b ' 11 3c前端部 114a 旋轉導引溝 115 鼓鍵機構 117 第1通電構件 118a 溝部 119 環保持構件 121 彈簧構件 123 通電構件 201 卡匣搬入口 203 訊號塔 210 裝卸台 214 感測裝置 218 定心裝置 16 半導體晶圓 18 第2通電構件 18b、 1 8 c前端部 20 導電構件 30 電鍍滾槽 32 過濾器 34 直流電源 110 電鍍失具 112 第2保持構件 112b 支持部 113a 通電機構收容 114 勒緊環 114b 凸起部 116 半導體晶圓 118 第2通電構件 118b ' 118c前端部 120 L字狀爪 122 導電體 200 電鍍裝置 202 控制盤 204 電裝箱 212 卡匣枱 216 晶圓搬運、機械 219 旋轉乾燥裝置18a concave structure 19 spring member 21 clamp 31 anode electrode 33 external electrode terminal + 35 pump 111 first holding member 112a ring portion 113 gasket 113b '11 3c front end portion 114a rotary guide groove 115 drum key mechanism 117 first power-on member 118a groove part 119 ring holding member 121 spring member 123 energizing member 201 cassette loading port 203 signal tower 210 loading and unloading table 214 sensing device 218 centering device 16 semiconductor wafer 18 second energizing member 18b, 1 8 c front end portion 20 conductive member 30 Plated roll groove 32 Filter 34 DC power supply 110 Plated jig 112 Second holding member 112b Support 113a Current-carrying mechanism housing 114 Tightening ring 114b Bump 116 Semiconductor wafer 118 Second current-carrying member 118b '118c Front end 120 L Zigzag claw 122 Conductor 200 Plating device 202 Control panel 204 Electrical box 212 Cassette table 216 Wafer handling, machinery 219 Rotary drying device

580745 五、發明說明(20) 220 台部 222a 晶圓裝卸台 222b 晶圓裝卸台 230 夾具存放架 232 夾具 240 電鍍槽部 250 電鍍構 252 隔間 253 攪拌裝置 260 水汽機 270 乾燥機 280 搬送徑路 300 夾具裝著裝置 302 轴部 304 圓盤 306 圓盤 310a 栓 310b 栓 320 電鍍夾具 322a 凹部 322b 凹部580745 V. Description of the invention (20) 220 units 222a Wafer loading and unloading station 222b Wafer loading and unloading station 230 Jig storage rack 232 Jig 240 Plating tank part 250 Plating structure 252 Compartment 253 Stirring device 260 Water vapor machine 270 Dryer 280 Transport path 300 Fixture mounting device 302 Shaft 304 Disc 306 Disc 310a Plunger 310b Plunger 320 Plating fixture 322a Recess 322b Recess

C:\ProgramFiles\Patent\310621.ptd 第 23 頁C: \ ProgramFiles \ Patent \ 310621.ptd page 23

Claims (1)

0M—MIMO29 — -- >、申請專利範圍 一種半導體晶圓之電鍍失 設有環狀岔封塾的第2保持構件仏:、備:第1保持構^ 保持於2速第1保持構件與前述2 +導體晶圓挟持並 間,同k ’使所保持之該 Π構件的密封 封墊之内周部, 日®表面露出前述密 ϋ設置第1通電構 件所㈣t半導體晶圓的外周部^述第1保持構 外部電極; 附近。卩位,且導通於 方、A述第2保持構件設置恭 於前述第1保持槿钍 & 、 2通电構件,佶 持半導體晶圓面的弟1通电構件及露出在前、f觸 密封為其特徵者的導電膜雙方,且以前述密:二;保 2· 如申請專刹^㈤ 丁以 其中,前述』::1項記載的半導體晶圓之、 前端部的二封墊的剖面為逆ϋ字壯&电鍍夹具, "部心觸:;角:i前述第1保4件:ΓΓυ字狀 間彀通電槿i述半導體晶圓表面,廿1另方前 裝第2通+構件收容孔,於該通電μ # 該兩前端部 3·如申?直電構件。 兔構件收容孔收容及』 具,其f利範圍第1或2項記載的主、. 逆_狀#山前述第2通電構件側Φ為導體/曰圓之電鱗失 構件及^而部為跨過設在前述第^圯子狀,而於該 性體持半導體晶圓V:;:件的第1通電0M—MIMO29 —-> Patent application scope A second retaining member provided with a ring-shaped fork seal for electroplating of a semiconductor wafer :, a: a first retaining structure ^ retained at a 2 speed first retaining member and The aforementioned 2 + conductor wafer is held in parallel, so that the inner peripheral portion of the sealing gasket of the Π member is held so that the outer surface of the semiconductor wafer on which the first conductive member is disposed is exposed on the surface ^. The first holding structure is described as an external electrode; nearby. The second holding member is placed in a position, and is connected to the side. The second holding member is provided in respect of the first holding member & 2 conducting member. The holding member 1 holding the semiconductor wafer surface is exposed and the front and f contact seals are The characteristics of the conductive film are as follows: the two parts are as follows: two; guarantee 2. If you apply for a special brake ^ 丁, where the aforementioned ":: 1" of the semiconductor wafer, the cross section of the two gaskets at the front end is Reverse Zhuang Zhuang & electroplating jig, " Ministry touch :; Angle: i the first 1 4 pieces: ΓΓυ between the current on the semiconductor wafer surface, 1 on the other side and the second pass + The component receiving hole is in the energized μ # the two front ends 3. Rushen? Direct electrical components. The rabbit component receiving hole is provided with the main component, which is described in item 1 or 2. The inverse shape of the aforementioned second current-carrying member side Φ is a conductor / circle electric scale loss member and ^ and The first energization across the semiconductor wafer V:;: that is located in the aforementioned ^ th zizi shape and holds the semiconductor body 第1頁 llff __ 2003. ]〇 〇2 580745 _案號 88108029 年月丄日__ 六、申請專利範圍 具有與外部電極導通之第1通電構件的第1保持構 件;及 具有第2通電構件且設有環狀密封墊的第2保持構 件; 其中,前述第1保持構件與前述第2保持構件之密 封墊間能裝卸自如地保持半導體晶圓, 且於前述第1保持構件與前述第2保持構件之密封 塾間保持半導體晶圓時5該保持於密封塾内周面之半 導體晶圓表面會露出,且可防止前述第1通電構件及前 述第2通電構件與電鍍液之接觸,並且以前述第2保持 構件的前述第2通電構件接觸前述第1保持構件之第1通 電構件及前述半導體晶圓雙方為特徵者。 5 . —種半導體晶圓之電鍍夾具,係具備··板狀第1保持構 件;安裝有密封墊的環狀第2保持構件;及勒緊環, 將半導體晶圓介在於前述第1保持構件及前述第2 保持構件之密封墊間,由前述勒緊環將前述第2保持構 件壓向前述第1保持構件以保持前述半導體晶圓, 且前述第2保持構件之密封墊接觸於露出半導體晶 圓面的導電膜,並且設有以該密封墊予以密封的通電 構件為其特徵者。 6. —種半導體晶圓之電鍍夾具,係具備··板狀的第1保持 構件;安裝有密封墊的環狀第2保持構件;及勒緊環, 將半導體晶圓介在於前述第1保持構件及前述第2 保持構件之密封墊間,由前述勒緊環將前述第2保持構Page 1 llff __ 2003.] 〇〇2 580745 _ Case No. 88108029 Month and Day __ Sixth, the scope of the patent application has a first holding member having a first current-carrying member in communication with an external electrode; and a first holding member having a second current-carrying member and A second holding member provided with a ring-shaped gasket; wherein the semiconductor wafer is detachably held between the first holding member and the second holding member, and the first holding member and the second holding When the semiconductor wafer is held between the sealing members, the surface of the semiconductor wafer held on the inner peripheral surface of the sealing member is exposed, and the contact between the first current-carrying member and the second current-carrying member and the plating solution can be prevented. The second holding member is characterized in that the second conductive member contacts both the first conductive member of the first holding member and the semiconductor wafer. 5. A plating fixture for a semiconductor wafer, which includes a plate-shaped first holding member, a ring-shaped second holding member to which a gasket is mounted, and a tightening ring for interposing the semiconductor wafer in the first holding member. And the gasket of the second holding member, the tightening ring presses the second holding member against the first holding member to hold the semiconductor wafer, and the seal of the second holding member contacts the exposed semiconductor crystal A conductive film having a round surface and a current-carrying member sealed by the gasket is a feature of the conductive film. 6. A plating fixture for a semiconductor wafer, comprising: a plate-shaped first holding member; a ring-shaped second holding member to which a gasket is mounted; and a tightening ring for interposing the semiconductor wafer between the first holding Between the component and the second holding member, the second holding structure is held by the tightening ring. 310621.pic 2003. 1 0. 02. 026 第2頁 580745 PM 88108029^ 六、申請專利範圍 之--赶 件壓向前述第1保持構件以 於前述第1保持構件并' 寺則述+ v肢晶圓, 位置設有第1通電構件,”寸之半導體晶圓外周部近傍 於前述第2保持構件的密封 使之接觸於設在前述第]伴 °又有弟2通電構件, 出於前述保持之半導;二持而構件的第1通電構件及露 密封塾予以密封為其面的導電膜雙方,並以; 如申請專利範圍第5或6 具,其中’於前述勒緊環;卜::::體晶圓之電鍍失 =,且於前述第1保持構件設有逆L::,形成凸起 緊環旋轉於預定尺寸,則可將〜+L子狀爪,將前述勒 字狀爪内側,使前述第 別处凸起部滑入前述 勒緊。 保持構件與第2保持構件互=1 如申請專利範圍第7項記載的 目 其中,前述第1保持構二=日日圓之電鍍夹且 機構連結,且能以二+及別迷第2保持構件弁v " 如申靖專利r = ί則述錢鍵機構為中心ί 較鍵 甲明專利靶圍第s項的曰匕予以開閉。 中,前述第2保持構 導租日日圓之電鍍夹 連結,並且能以Λ ,丽述勒緊環係介由其 定尺寸。 ^ I環在前述第2保持構二】,構件 】〇·-種半導體晶圓 上知轉預 第m持構件及/鍍失具,係具備··第^ 有j入i 月匕移動於固定#罢 1保持構件· 有扣合部的固定環, 疋位置及開敌位置,且: 其中,能於前述第m持構件 ^ 件及别述第2保持構件 ^ i 062].pic 2003· ]〇. 〇2· 〇27 580745 _案號 88108029_义年月上曰___ 六、申請專利範圍 間將半導體晶圓予以裝卸自如保持, 於前述第1保持構件及前述第2保持構件中之任一 方設有能與前述固定環扣合部扣脫自如的被扣合部, 當前述固定環在固定位置時,使藉由前述固定環 扣合部與前述被扣合部以扣脫自如方式扣合,使前述 第1保持構件及前述第2保持構件得以固定, 當前述固定環在開放位置時,以可將半導體晶圓 置放於前述第1保持構件與前述第2保持構件間之方 式,或以可將半導體晶圓自前述第1保持構件與前述第 2保持構件間取出之方式,令前述第1保持構件及前述 第2保持構件之固定作用放開為其特徵者。 1 1 . 一種半導體晶圓之電鍍裝置,係應用上述申請專利範 圍任一項記載的半導體晶圓電鍍夾具為其特徵者。 1 2. —種半導體晶圓之電鍍裝置,係具備: 能由收容半導體晶圓之晶圓卡匣,將半導體晶圓 收容於電鍍夹具,並能由收容半導體晶圓之電鍍夾具 將半導體晶圓收容於晶圓卡匣的裝卸台;及 將收容半導體晶圓之前述電鍍夾具浸潰於電鍍槽 中的電鍍液,以對半導體晶圓進行電鍍作業的電鍍槽 部為其特徵者。 1 3. —種半導體晶圓之電鍍裝置,係包括: 裝卸台,由:收容半導體晶圓之晶圓卡匣、可將 晶圓由該晶圓卡匣取出或收容其中之晶圓搬運機械 人、與用以將晶圓裝卸於夾具之夾具裝著裝置;310621.pic 2003. 1 0. 02. 026 Page 2 580745 PM 88108029 ^ Sixth, the scope of the patent application-rush the piece to the aforementioned first holding member so that the aforementioned first holding member does not merge with the temple + v limb The wafer is provided with a first current-carrying member at a position near the outer periphery of the semiconductor wafer near the aforementioned second holding member so that it is in contact with the second current-carrying member provided at the above-mentioned second carrier. The first conductive member and the exposed sealing member of the second holding member are sealed as the conductive film on both sides, and the two are: if the scope of the patent application is 5 or 6, among them, 'in the aforementioned tightening ring; Bu: ::: Plating loss of the body wafer =, and the first holding member is provided with a reverse L ::, forming a raised tight ring and rotating to a predetermined size, then the ~ + L sub-shaped claw can be used to shape the aforementioned character The inner side of the claw slides the raised part at the other place into the tightening. The holding member and the second holding member mutually = 1 As described in item 7 of the scope of patent application, the first holding structure 2 = Japanese yen plating It is connected with the mechanism, and can hold the second holding member 弁 v " Shen Jing patent r = ί is described as the key mechanism. It is opened and closed as compared to the item s of the key range of the key Jiaming patent. In the above, the second holding structure guides the Japanese yen and the electroplating clip and can be connected by Λ The Lisher tightening ring is sized by its dimensions. ^ I-ring is in the second holding structure described above], the component]. The semiconductor wafer is known as the m-th holding component and / or the plating loss tool. ·· 第 有 入 月 月 刀 以 于 ## 1 holding member · Fixed ring with fastening portion, 疋 position and open enemy position, and: Among them, it can be in the aforementioned m-th holding member ^ and other 2nd holding member ^ i 062] .pic 2003 ·] 〇. 〇2 · 〇27 580745 _ Case No. 88108029_Yi Nianyue month ___ Six, semiconductor wafers can be freely held between the scope of the patent application, as described above Either the first holding member or the second holding member is provided with a buckled portion that can be loosened from the fixed ring engaging portion, and when the fixed ring is in a fixed position, the fixed ring is fastened by the fixed ring. And the buckled portion are fastened in a detachable manner, so that the first holding member and the front The second holding member is fixed. When the fixing ring is in the open position, the semiconductor wafer can be placed between the first holding member and the second holding member, or the semiconductor wafer can be placed from the first holding member. 1 The method of taking out between the holding member and the second holding member, so as to release the fixing function of the first holding member and the second holding member as its characteristics. 1 1. A plating device for a semiconductor wafer to which the above is applied The semiconductor wafer electroplating jig described in any one of the scope of the patent application is a feature thereof. 1 2. A plating device for a semiconductor wafer, comprising: a wafer cassette capable of accommodating a semiconductor wafer; the semiconductor wafer can be accommodated in a plating jig; and the semiconductor wafer can be accommodated by a plating jig that accommodates the semiconductor wafer. A loading / unloading station accommodated in a wafer cassette; and a plating bath portion in which the aforementioned plating jig for accommodating a semiconductor wafer is immersed in a plating bath, and a plating bath portion for performing a plating operation on the semiconductor wafer is a feature thereof. 1 3. —A plating device for semiconductor wafers, including: loading and unloading station, including: a wafer cassette containing semiconductor wafers, and a wafer handling robot capable of taking wafers out of or containing the wafer cassettes And a fixture mounting device for loading and unloading wafers into the fixture; 310621.pic 第4頁 2003. 10.02.028 580745 _案號 88108029_尸4 年月二曰___ 六、申請專利範圍 電鍍槽部,設有電鍍槽供收容有上述晶圓之上述 炎具浸潰於電鐘液中以施行晶圚電鐘,及 夾具搬送機械人,用以將裝著有上述晶圓之夾具 搬運於上述裝卸台與上述電鍍槽部之間。 1 4 .如申請專利範圍第1 3項之電鍍裝置,其中,上述裝卸 台復具備:藉由夾具裝著裝置將晶圓裝卸於夾具之夾 具裝著台(晶圓裝卸台);及將夾具搬運至上述夾具裝 著台之搬送機械人。 1 5 .如申請專利範圍第1 3或1 4項之電鍍裝置,其中,上述 電鍍槽部復包括水洗槽及乾燥槽。 1 6 .如申請專利範圍第1 3或1 4項之電鍍裝置,其中,上述 夾具包括:第1保持構件、裝設有密封墊之第2保持構 件、通電構件與勒緊環,藉由令半導體晶圓介裝在該 第1保持構件與第2保持構件密封墊之間,以該勒緊環 將第2保持構件壓向第1保持構件,而將該半導體晶圓 固定並通電。 1 7. —種半導體晶圓之電鍍方法,包括: 從收容有晶圓之晶圓卡匡取出晶圓’以晶圓搬運 機械人將晶圓搬送至晶圓裳卸台之工序, 在上述晶圓裝卸台上,藉夾具裝卸裝置將晶圓裝 於夾具之工序;藉夾具搬送機械人將裝有上述晶圓之 夾具搬運至電鍍槽,並浸潰於電鍍液實施電鍍之工 序; 藉上述夾具搬送機械人將夾具搬送至晶圓裝卸310621.pic Page 4 2003. 10.02.028 580745 _ Case No. 88108029_ Dead 4th of February ___ Sixth, the scope of the patent application plating tank section, with plating tank for the above-mentioned inflammation immersion of the wafer In the electric clock liquid, a crystal electric clock is executed, and a jig transfer robot is used to transport the jig containing the wafer between the loading and unloading table and the plating tank portion. 14. The electroplating device according to item 13 of the scope of application for a patent, wherein the loading and unloading table further comprises: a jig mounting table (wafer loading and unloading table) for loading and unloading wafers to and from the jig by the jig mounting device; and A transport robot that is transported to the jig mounting table. 15. The electroplating device according to item 13 or 14 of the scope of patent application, wherein the electroplating tank part further includes a water washing tank and a drying tank. 16. The electroplating device according to item 13 or 14 of the scope of the patent application, wherein the clamp includes: a first holding member, a second holding member provided with a gasket, a current-carrying member, and a tightening ring. A semiconductor wafer is interposed between the first holding member and the second holding member seal, and the second holding member is pressed against the first holding member by the tightening ring, and the semiconductor wafer is fixed and energized. 1 7. A method for electroplating a semiconductor wafer, including the steps of: taking out a wafer from a wafer card containing the wafer, and transferring the wafer to a wafer unloading station by a wafer handling robot; On the round loading and unloading table, the process of mounting wafers in the jig by the jig loading and unloading device; the jig transfer robot transfers the jig containing the wafer to the plating tank, and immerses it in the plating solution to perform the plating process; Transfer robot transfers jigs to wafer loading and unloading 3]062].pic 第5頁 2003. ] 0.02. 029 580745 修正 案號 88108029 六、申請專利範圍 台,利用上 序;及 將言亥晶 1 8 .如申請專利 鍍工序與將 上述晶圓在 之工序。 1 9 .如申請專利 圓裝卸台上 容於晶0卡 施行乾燥之 2 0 . —種半導體 裝卸台 導體晶圓收 鍍夾具將半 電鍍槽 浸潰於電鍍 鍍;及 夾具搬 搬送上述夾 述夹具裝卸裝置將晶圓從夾具卸下之工 圓收容於晶圓卡匣之工序。 範圍第1 7項之電鍍方法,其中,在上述電 夾具搬送至晶圓裝卸台之工序間具備有將 水洗槽中施行清洗且在乾燥槽中去除水滴 範圍第1 7或1 8項之電鍍方法,其中,在 將上述晶圓從夾具卸下之工序與將晶圓收 匣之工序間具備有將晶圓在旋轉乾燥槽中 工序。 晶圓之電鍍裝置,包括: ,可從收容有半導體晶圓之晶圓卡匣將半 容於電鍍夾具,且從裝有半導體晶圓之電 導體晶圓收容於晶圓卡匣; 部,可將裝有半導體晶圓之上述電鍍夾具 槽中之電鍍液中,將半導體晶圓施行電 送機械人,可在上述裝卸台與電鍍槽部間 具。 1. 一種半導體晶圓之電鍍夾具,係具備: 第一保持構件,其具有半導體晶圓支持面; 環狀第二保持構件; 勒緊環,係可相對於該第二保持構件旋轉而將該 310621.pic —^13] 062] .pic Page 5 2003.] 0.02. 029 580745 Amendment No. 88108029 6. Apply for a patent scope, use the above sequence; and make a statement 18: If you apply for a patent plating process and place the above wafer in The process. 19. If the patent application circular loading and unloading table is filled with crystal 0 cards, dry 20 is used. — A semiconductor loading and unloading platform for conductor wafer receiving and plating jigs immersing a semi-plating bath in electroplating; A process in which the loading and unloading device stores the wafers removed from the jig in a wafer cassette. The electroplating method according to item 17 of the scope, wherein the electroplating method for cleaning the water tank and removing the water droplets in the drying tank is provided between the process of transferring the electric jig to the wafer loading and unloading station, and the method of electroplating in the range of 17 or 18 is provided. Among them, between the step of removing the wafer from the jig and the step of storing the wafer, a step of placing the wafer in a rotary drying tank is provided. The wafer electroplating device includes: a semi-capacitor can be contained in a plating jig from a wafer cassette containing a semiconductor wafer, and a wafer cassette can be contained in an electric conductor wafer containing a semiconductor wafer; The semiconductor wafer is electro-delivered to the electroplating solution in the electroplating jig tank containing the semiconductor wafer, and the robot can be placed between the mounting table and the electroplating tank. 1. A plating fixture for a semiconductor wafer, comprising: a first holding member having a semiconductor wafer supporting surface; a ring-shaped second holding member; and a tightening ring which is rotatable relative to the second holding member and 310621.pic — ^ 1 ϋ^'is— 1 第6頁 2003. 10. 02. 030 580745 _案號88108029 b年月丄日 修正_ 六、申請專利範圍 第二保持構件推向該第一保持構件,以便將該半導體 晶圓保持於其中; 襯墊,其設置於該第二保持構件,當該第一保持 構件及第二保持構件將該半導體晶圓保持於其中時, 該襯墊具有接觸面可以密封方式與該第一保持構件接 觸;以及 通電構件,係設置於該襯墊之凹部中,並且當該 第一保持構件及第二保持構件將該半導體晶圓保持於 其中時,其係配置以與該半導體晶圓之導電膜相接 觸。 2 2 .如申請專利範圍第2 1項所記載的半導體晶圓之電鍍夾 具,其中,復包括彈性體構件以將該通電構件彈性地 壓向該半導體晶圓之導電膜。 2 3 .如申請專利範圍第2 1項所記載的半導體晶圓之電鍍夾 具,其中,該第一保持構件為板狀。 2 4 .如申請專利範圍第2 1項所記載的半導體晶圓之電鍍夾 具,其中,該勒緊環外周具有複數個形成於其中之凸 起部,該等凸起部係以特定間隔而配置,且該第一保 持構件包括複數個逆L字狀爪,該複數個凸起部係滑入 該複數個逆L字狀爪,以於該勒緊環旋轉特定角度時將 該第一保持構件及第二保持構件一起勒緊。 2 5 .如申請專利範圍第2 1項所記載的半導體晶圓之電鍍夾 具,其中,復包括鉸鍊機構以將該第一保持構件及第 二保持構件連接,該第一保持構件及第二保持構件可ϋ ^ 'is— 1 Page 6 2003. 10. 02. 030 580745 _ Case No. 88108029 Rev. b / Year_6. Patent application scope The second holding member is pushed toward the first holding member in order to make the semiconductor crystal A circle is held therein; a pad is provided on the second holding member, and when the first holding member and the second holding member hold the semiconductor wafer therein, the pad has a contact surface and can be sealed with the first holding member; A holding member is in contact; and a current-carrying member is provided in the recess of the pad, and is configured to be in contact with the semiconductor wafer when the first holding member and the second holding member hold the semiconductor wafer therein. The conductive film is in contact. 2 2. The electroplating jig for a semiconductor wafer as described in item 21 of the patent application scope, further comprising an elastic member to elastically press the conductive member against the conductive film of the semiconductor wafer. 2 3. The plating holder for a semiconductor wafer according to item 21 of the scope of patent application, wherein the first holding member is plate-shaped. 24. The plating fixture for a semiconductor wafer as described in item 21 of the scope of patent application, wherein the tightening ring has a plurality of raised portions formed therein, and the raised portions are arranged at specific intervals. And the first holding member includes a plurality of inverse L-shaped claws, the plurality of protrusions slide into the plurality of inverse L-shaped claws so that the first holding member is rotated when the tightening ring rotates a specific angle It is tightened together with the second holding member. 2 5. The electroplating jig for a semiconductor wafer according to item 21 of the scope of patent application, further comprising a hinge mechanism to connect the first holding member and the second holding member, the first holding member and the second holding member. Component can 310621.pic 第7頁 2003.10.02. 031 580745 _案號 88108029_^年 /〇 月上日__ 六、申請專利範圍 繞著該较鍊機構樞轉。 2 6 .如申請專利範圍第2 1項所記載的半導體晶圓之電鍍夾 具,其中,復包括固定環,以該固定環將該第二保持 構件及該勒緊環連接,該固定環可透過特定角度在該 第二保持構件上旋轉。 2 7. —種半導體晶圓之電鍍夹具,係具備: 第一保持構件,其為板狀; 環狀第二保持構件,包括安裝於其上之襯墊;以 及 勒緊環,係可將該第二保持構件壓向該第一保持 構件,以便將該半導體晶圓保持於其中,該半導體晶 圓具有外周; 該第一保持構件包括第一通電構件,該第一通電 構件係以鄰接保持於該第一保持構件及第二保持構件 之間的半導體晶圓之外周而配置; 該第二保持構件之襯墊包括第二通電構件,當該 半導體晶圓保持於該第一保持構件及第二保持構件之 間並藉由該襯墊密封時,該第二通電構件係以與該第 一通電構件及該半導體晶圓之導電膜相接觸而配置。 2 8 .如申請專利範圍第2 7項所記載的半導體晶圓之電鍍夾 具,其中,該勒緊環外周具有複數個形成於其中之凸 起部,該等凸起部係以特定間隔而配置,且該第一保 持構件包括複數個逆L字狀爪,該複數個凸起部係滑入 該複數個逆L字狀爪,以於該勒緊環旋轉特定角度時將310621.pic Page 7 2003.10.02. 031 580745 _ Case No. 88108029_ ^ year / 〇 On the date of the month __ VI. Scope of patent application Pivot around the chain mechanism. 2 6. The electroplating jig for a semiconductor wafer as described in item 21 of the scope of patent application, further comprising a fixing ring, the second holding member and the tightening ring are connected by the fixing ring, and the fixing ring can pass through A specific angle is rotated on the second holding member. 2 7. A plating fixture for a semiconductor wafer, comprising: a first holding member, which is plate-shaped; a ring-shaped second holding member, including a pad mounted thereon; and a tightening ring, which can A second holding member is pressed against the first holding member to hold the semiconductor wafer therein, the semiconductor wafer having an outer periphery; the first holding member includes a first current-carrying member, and the first current-carrying member is held adjacently to The semiconductor wafer between the first holding member and the second holding member is arranged on the outer periphery; the pad of the second holding member includes a second current-carrying member, and when the semiconductor wafer is held on the first holding member and the second holding member When the holding members are sealed by the gasket, the second current-carrying member is disposed in contact with the first current-carrying member and the conductive film of the semiconductor wafer. 2 8. The plating fixture for a semiconductor wafer as described in item 27 of the scope of patent application, wherein the tightening ring has a plurality of raised portions formed therein, and the raised portions are arranged at specific intervals. And the first holding member includes a plurality of inverse L-shaped claws, and the plurality of protrusions slide into the plurality of inverse L-shaped claws so that when the tightening ring rotates a specific angle, 310621.pic 第8頁 2003. 1 0.02.032 ^^18108029 六、申請專利範圍 該第一保持構件及 29·如申請專利範圍 其中,復包括 二保持構件連接, 繞著該鉸鍊機構樞 3 0 .如申請專利範圍 * ’其中,復包括 二保持構件連接, 繞著該鉸鍊機構樞 3 1 ·如申凊專利範圍 ^其中,復包括 構件及該勒緊環連 第二保持構件上旋 32. 如申請專利範圍 其中’復包括 緊環連接’該固定 件上旋轉。 33. —種用於電鍍系 備: T狀絕緣構件 環狀概墊,其 一接觸面以與半導 至少一個通電 接觸面之部份;310621.pic Page 8 2003. 1 0.02.032 ^^ 18108029 6. The scope of the patent application The first holding member and 29. If the scope of the patent application, the two holding members are connected, around the hinge mechanism pivot 30. If the scope of the patent application * 'wherein, the complex includes two retaining members connected around the hinge mechanism pivot 3 1 · as claimed in the scope of the patent ^ where the complex includes the members and the tightening ring connected to the second retaining member on the 32. The scope of the patent application includes 'compounding including tight ring connection' for rotation on the fixing member. 33. A type used for electroplating system. Preparation: T-shaped insulating member, a ring-shaped pad, a contact surface of which is at least a part of a conductive contact surface of the semiconductor; 曰 構件_ 載的半 以將該 持構件 載的半 以將該 持構件 载的半 以該固 定環可 載的半 將該第 特定角 第二保持 28項所記 鉸鍊機構 該第一保 轉。 2 7項所記 鉸鍊機構 該第一保 轉。 3 0項所記 固定環, 接,該固 轉。 2 7項所記 固定環以 環可透過 中之半導體晶圓 ,其定義一中央 設置在該環狀絕 體晶圓接觸;以 構件,其係作為 修正 起勒緊。 導體晶圓之電鍍夾 第一保持構件及第 及弟二保持構件可 導體晶圓之電鍍夹 第一保持構件及第 及第二保持構件可 導體晶圓之電錢央^ 定環將該第二保持 透過特定角度在言亥 導體晶圓之電鐵夾^ 二保持構件及該勒 度在該第二保持構 之電鍍夹具,係具 緣構件上,並定義 及 陰極,並且定義言亥 警__氣 310621.picSaid member_half is to hold the holding member to half to hold the holding member to half by the fixing ring, and to hold the first specified angle second to the hinge mechanism described in item 28, the first rotation. 2 The 7th hinge mechanism The first guarantee. 30 Fixing ring as described in Item 0, then, this fixed rotation. The fixation ring described in item 7 is a ring that can pass through the semiconductor wafer. It defines a centrally placed contact with the ring-shaped semiconductor wafer; the component is tightened as a correction. The first holding member and the second and second holding members of the electroplating clip of the conductive wafer can be the first holding member and the second and second holding members of the electroplating clip of the conductive wafer. Hold the electric iron clip on the Yanhai conductor wafer through a specific angle ^ The second holding member and the plating fixture of the second holding structure on the second holding structure are attached to the edge member, and define the cathode, and define the word police __ Gas 310621.pic « 9頁 2003.10.02 580745 案號88108029 p年〜月上日 修正«9 pages 2003.10.02 580745 case number 88108029 p year ~ month previous date amendment 3]0621.pic 第10頁 2003. 10. 02. 034 580745 _案號 88108029 Λ年〜月工日_^_ 六、申請專利範圍 具,其中,該片狀保持構件包括絕緣材料。 4 3 . —種用於電鍍系統中之半導體晶圓之電鍍夾具,係具 備: 環狀絕緣構件,其定義一中央開口; 環狀襯墊,其設置在該環狀絕緣構件上,並定義 一接觸面以與半導體晶圓接觸;以及 至少一個通電構件,其係作為陰極,並且定義該 接觸面之部份; 其中,該至少一個通電構件係連接至透過該環狀 絕緣構件而設置之連接件,並且可將該連接件連接至 外部電極。 4 4 .如申請專利範圍第4 3項所記載的半導體晶圓之電鍍夾 具,其中,該環狀絕緣構件包括絕緣材料。 4 5 .如申請專利範圍第4 4項所記載的半導體晶圓之電鍍夾 具,其中,該絕緣材料包括合成樹脂。 4 6 .如申請專利範圍第4 3項所記載的半導體晶圓之電鍍夾 具,其中,該環狀襯墊係可移除。 4 7 .如申請專利範圍第4 3項所記載的半導體晶圓之電鍍夾 具,其中,該環狀襯墊包括彈性材料。 4 8 .如申請專利範圍第4 3項所記載的半導體晶圓之電鍍夾 具,其中,該至少一個通電構件係連接至外部電極。 4 9 .如申請專利範圍第4 3項所記載的半導體晶圓之電鍍夾 具,其中,該環狀襯墊以及該至少一個通電構件包括 一整體部分。3] 0621.pic Page 10 2003. 10. 02. 034 580745 _ Case No. 88108029 Λ year ~ month of work day _ ^ VI. Application for a patent, wherein the sheet-shaped holding member includes an insulating material. 4 3. A plating fixture for a semiconductor wafer in a plating system, comprising: a ring-shaped insulating member defining a central opening; a ring-shaped gasket provided on the ring-shaped insulating member and defining a A contact surface to be in contact with the semiconductor wafer; and at least one current-carrying member serving as a cathode and defining a portion of the contact surface; wherein the at least one current-carrying member is connected to a connection member provided through the annular insulating member , And this connector can be connected to an external electrode. 4 4. The electroplating clamp for a semiconductor wafer as described in item 43 of the patent application scope, wherein the ring-shaped insulating member includes an insulating material. 45. The semiconductor wafer electroplating clamp according to item 44 of the patent application scope, wherein the insulating material includes a synthetic resin. 46. The semiconductor wafer electroplating clamp as described in item 43 of the patent application scope, wherein the ring-shaped gasket is removable. 47. The plating fixture for a semiconductor wafer as described in item 43 of the patent application scope, wherein the ring-shaped gasket includes an elastic material. 48. The plating fixture for a semiconductor wafer as described in item 43 of the scope of patent application, wherein the at least one current-carrying member is connected to an external electrode. 49. The plating fixture for a semiconductor wafer as described in item 43 of the patent application scope, wherein the ring-shaped gasket and the at least one current-carrying member include an integral part. 310621.pic 第]1頁 2003. 10. 02. 035 580745 _案號 88108029_产」年/〇月ι曰_魅_ 六、申請專利範圍 5 0 .如申請專利範圍第4 3項所記載的半導體晶圓之電鍍夾 具,其中,復包括片狀保持構件以將該半導體晶圓與 該環狀絕緣構件一起保持。 5 1 .如申請專利範圍第5 0項所記載的半導體晶圓之電鍍夹 具,其中,該片狀保持構件包括絕緣材料。 5 2. —種用於電鍍系統中之半導體晶圓之電鍍夹具,係具 備: 環狀絕緣構件,其定義一中央開口; 環狀襯墊,其設置在該環狀絕緣構件上,並定義 一接觸面以與半導體晶圓接觸;以及 複數個通電構件,其係設置於該環狀絕緣構件 中,每一個通電構件具有與該半導體晶圓接觸並且作 為陰極之内部,以及可接觸電氣連接至外部電極的通 電構件之外部。 5 3 .如申請專利範圍第5 2項所記載的半導體晶圓之電鍍夾 具,其中,該通電構件包括一個或更多個具有複數個 孔的連接件。 5 4 .如申請專利範圍第5 2項所記載的半導體晶圓之電鍍夾 具,其中,該環狀絕緣構件包括絕緣材料。 5 5 .如申請專利範圍第5 4項所記載的半導體晶圓之電鍍夾 具,其中,該絕緣材料包括合成樹脂。 5 6 .如申請專利範圍第5 2項所記載的半導體晶圓之電鍍夾 具,其中,該環狀襯墊係可移除。 5 7 .如申請專利範圍第5 2項所記載的半導體晶圓之電鍍夾310621.pic page] 1 page 2003. 10. 02. 035 580745 _ case number 88108029 _ production "year / 〇 月 ι _ charm_ VI. Application scope of patent 50. As described in item 43 of the scope of patent application A plating fixture for a semiconductor wafer, further comprising a sheet-like holding member to hold the semiconductor wafer together with the ring-shaped insulating member. 51. The plating fixture for a semiconductor wafer as described in claim 50 of the scope of patent application, wherein the sheet-shaped holding member includes an insulating material. 5 2. —A plating fixture for a semiconductor wafer in an electroplating system, comprising: a ring-shaped insulating member defining a central opening; a ring-shaped gasket provided on the ring-shaped insulating member and defining a A contact surface to be in contact with the semiconductor wafer; and a plurality of current-carrying members provided in the ring-shaped insulating member, each of the current-carrying members having an interior that is in contact with the semiconductor wafer and serves as a cathode, and can be electrically connected to the outside by contact The electrodes are external to the current-carrying member. 53. The electroplating clamp for a semiconductor wafer according to item 52 of the scope of the patent application, wherein the current-carrying member includes one or more connectors having a plurality of holes. 54. The electroplating clamp for a semiconductor wafer according to item 52 of the scope of patent application, wherein the ring-shaped insulating member includes an insulating material. 5 5. The semiconductor wafer electroplating clamp as described in item 54 of the scope of patent application, wherein the insulating material includes a synthetic resin. 56. The semiconductor wafer plating fixture as described in item 52 of the scope of patent application, wherein the ring-shaped gasket is removable. 57. Electroplating clips for semiconductor wafers as described in item 52 of the scope of patent application 31062].pic 第12頁 2003. 10.02.036 580745 案號88108029 年/〇月二日 修正 六、申請專利範圍 具,其中,該環狀襯墊包括彈性材料。 5 8 .如申請專利範圍第5 2項所記載的半導體晶圓之電鍍夹 具,其中,該環狀襯墊以及該通電構件包括一整體部 分。 5 9 .如申請專利範圍第5 2項所記載的半導體晶圓之電鍍夾 具,其中,復包括片狀保持構件以將該半導體晶圓與 該環狀絕緣構件一起保持。 6 0 .如申請專利範圍第5 9項所記載的半導體晶圓之電鍍夾 具,其中,該片狀保持構件包括絕緣材料。 6 1 .如申請專利範圍第5 2項所記載的半導體晶圓之電鍍夾 具,其中,該通電構件係設置於該片狀保持構件上。 6 2. —種用於電鍍半導體晶圓之電鍍系統,係具備: 電鍍槽,其含有電鍍液; 陽極,其設置於該電鍍槽之内;以及 半導體晶圓之電鍍夾具,其用於保持半導體晶 圓,以便使該半導體晶圓面對該陽極,該半導體晶圓 之電鍍夾具包括: 環狀絕緣構件,其定義一中央開口; 環狀襯墊,其設置在該環狀絕緣構件上,並定義 一接觸面以與半導體晶圓接觸;以及 至少一個通電構件,其係作為陰極,並且定義該 接觸面之部份; 其中,該環狀襯墊具有内側部份以及外側部份, 該内側部份係相容地設置於該至少一個通電構件之31062] .pic Page 12 2003. 10.02.036 580745 Case No. 88108029 / October 2 Amendment 6. Scope of patent application, wherein the ring-shaped gasket includes an elastic material. 58. The plating fixture for a semiconductor wafer as described in item 52 of the scope of the patent application, wherein the ring-shaped gasket and the current-carrying member include an integral part. 59. The plating fixture for a semiconductor wafer according to item 52 of the scope of patent application, further comprising a sheet-shaped holding member for holding the semiconductor wafer together with the ring-shaped insulating member. 60. The plating fixture for a semiconductor wafer according to item 59 of the patent application scope, wherein the sheet-shaped holding member includes an insulating material. 6 1. The electroplating clamp for a semiconductor wafer according to item 52 of the scope of the patent application, wherein the current-carrying member is provided on the sheet-shaped holding member. 6 2. An electroplating system for electroplating a semiconductor wafer, comprising: an electroplating tank containing a plating solution; an anode disposed in the electroplating tank; and a plating fixture for a semiconductor wafer for holding a semiconductor A wafer so that the semiconductor wafer faces the anode, the plating fixture of the semiconductor wafer includes: a ring-shaped insulating member defining a central opening; a ring-shaped gasket provided on the ring-shaped insulating member, and A contact surface is defined to be in contact with the semiconductor wafer; and at least one current-carrying member is used as a cathode and defines a portion of the contact surface; wherein the ring-shaped gasket has an inner portion and an outer portion, and the inner portion A component is compatible with the at least one energized member. 31062].pic 第13頁 2003. 10.02.037 580745 _案號88108029_户」年办月 > 日_^_ 六、申請專利範圍 内,該外側部份係相容地設置於該至少一個通電構件 之外。 6 3 .如申請專利範圍第6 2項所記載的半導體晶圓之電鍍系 統,其中,該至少一個通電構件包括一個或更多個具 有複數個孔的連接件。 6 4 .如申請專利範圍第6 2項所記載的半導體晶圓之電鍍系 統,其中,該環狀絕緣構件包括絕緣材料。 6 5 .如申請專利範圍第6 4項所記載的半導體晶圓之電鍍系 統,其中,該絕緣材料包括合成樹脂。 6 6 .如申請專利範圍第6 2項所記載的半導體晶圓之電鍍系 統,其中,該環狀襯墊係可移除。 6 7 .如申請專利範圍第6 2項所記載的半導體晶圓之電鍍系 統,其中,該環狀襯墊包括彈性材料。 6 8 .如申請專利範圍第6 2項所記載的半導體晶圓之電鍍系 統,其中,該至少一個通電構件係連接至外部電極。 6 9 .如申請專利範圍第6 2項所記載的半導體晶圓之電鍍系 統,其中,該環狀襯墊以及該至少一個通電構件包括 一整體部分。 7 0 .如申請專利範圍第6 2項所記載的半導體晶圓之電鍍系 統,其中,復包括片狀保持構件以將該半導體晶圓與 該環狀絕緣構件一起保持。 7 1 .如申請專利範圍第7 0項所記載的半導體晶圓之電鍍系 統’其中’該片狀保持構件包括絕緣材料。 7 2. —種用於電鍍半導體晶圓之電鍍系統,係具備:31062] .pic Page 13 2003. 10.02.037 580745 _ Case No. 88108029_ Household "Month Office & Month> Day _ ^ _ VI. Within the scope of patent application, the outer part is compatible with the at least one power-on Beyond components. 63. The electroplating system for a semiconductor wafer according to item 62 of the scope of the patent application, wherein the at least one current-carrying member includes one or more connectors having a plurality of holes. 64. The electroplating system for a semiconductor wafer according to item 62 of the scope of patent application, wherein the ring-shaped insulating member includes an insulating material. 65. The electroplating system for a semiconductor wafer as described in item 64 of the patent application scope, wherein the insulating material includes a synthetic resin. 6 6. The plating system for a semiconductor wafer as described in item 62 of the scope of patent application, wherein the ring-shaped gasket is removable. 67. The plating system for a semiconductor wafer as described in item 62 of the patent application scope, wherein the ring-shaped gasket includes an elastic material. 68. The electroplating system for a semiconductor wafer according to item 62 of the scope of patent application, wherein the at least one current-carrying member is connected to an external electrode. 69. The electroplating system for a semiconductor wafer according to item 62 of the scope of the patent application, wherein the ring-shaped gasket and the at least one current-carrying member include an integral part. 70. The plating system for a semiconductor wafer as described in item 62 of the patent application scope, further comprising a sheet-shaped holding member for holding the semiconductor wafer together with the ring-shaped insulating member. 7 1. The plating system for a semiconductor wafer as described in item 70 of the scope of patent application, wherein the sheet-shaped holding member includes an insulating material. 7 2. —A plating system for plating semiconductor wafers, which has: 3]0621.pic 第Μ頁 2003.10.02. 038 580745 _案號88108029 L年/〇月 > 日 修正_ 六、申請專利範圍 電鍍槽,其含有電鍍液; 陽極,其設置於該電鍍槽之内;以及 半導體晶圓之電鍍夾具,其用於保持半導體晶 圓,以便使該半導體晶圓面對該陽極,該半導體晶圓 之電鍍夾具包括: 環狀絕緣構件,其定義一中央開口; 環狀襯墊,其設置在該環狀絕緣構件上,並定義 一接觸面以與半導體晶圓接觸;以及 複數個通電構件,其係設置於該環狀絕緣構件 中,每一個通電構件具有與該半導體晶圓接觸並且作 為陰極之内部,以及可接觸電氣連接至外部電極的通 電構件之外部^ 7 3 .如申請專利範圍第7 2項所記載的半導體晶圓之電鍍系 統,其中,該通電構件包括一個或更多個具有複數個 孔的連接件。 7 4 .如申請專利範圍第7 2項所記載的半導體晶圓之電鍍系 統,其中,該環狀絕緣構件包括絕緣材料。 7 5 .如申請專利範圍第7 4項所記載的半導體晶圓之電鍍系 統,其中,該絕緣材料包括合成樹脂。 7 6 .如申請專利範圍第7 2項所記載的半導體晶圓‘之電鍍系 統,其中,該環狀襯墊係可移除。 7 7 .如申請專利範圍第7 2項所記載的半導體晶圓之電鍍系 統,其中,該環狀襯墊包括彈性材料。 7 8 .如申請專利範圍第7 2項所記載的半導體晶圓之電鍵系3] 0621.pic Page M 2003.10.02. 038 580745 _ Case No. 88108029 L Year / October > Day Amendment_ VI. Patent application scope Electroplating bath, which contains electroplating solution; anode, which is set in the electroplating bath And a plating fixture for a semiconductor wafer for holding the semiconductor wafer so that the semiconductor wafer faces the anode, the plating fixture for the semiconductor wafer includes: a ring-shaped insulating member defining a central opening; a ring A gasket, which is disposed on the ring-shaped insulating member and defines a contact surface to be in contact with the semiconductor wafer; and a plurality of current-carrying members, which are provided in the ring-shaped insulating member, each of which has a connection with the The semiconductor wafer is in contact with and serves as the inside of the cathode and the outside of a current-carrying member that can be electrically connected to an external electrode ^ 7 3. The plating system for a semiconductor wafer as described in item 72 of the patent application scope, wherein the current-carrying member Includes one or more connectors with a plurality of holes. 74. The electroplating system for a semiconductor wafer according to item 72 of the scope of patent application, wherein the ring-shaped insulating member includes an insulating material. 75. The plating system for a semiconductor wafer as described in item 74 of the scope of patent application, wherein the insulating material includes a synthetic resin. 76. The plating system for a semiconductor wafer ′ according to item 72 of the scope of the patent application, wherein the ring-shaped gasket is removable. 77. The electroplating system for a semiconductor wafer according to item 72 of the scope of patent application, wherein the ring-shaped gasket includes an elastic material. 7 8. The key system of the semiconductor wafer as described in item 72 of the scope of patent application 31062].pic 第15頁 2003. ] 0.02. 039 580745 _案號88108029 h年^月1日 修正_ 六、申請專利範圍 統,其中,該環狀襯墊以及該通電構件包括一整體部 分。 7 9 .如申請專利範圍第7 2項所記載的半導體晶圓之電鍍系 統,其中,復包括片狀保持構件以將該半導體晶圓與 該環狀絕緣構件一起保持。 8 0 .如申請專利範圍第7 9項所記載的半導體晶圓之電鍍系 統’其中’該片狀保持構件包括絕緣材料。 8 1 .如申請專利範圍第7 2項所記載的半導體晶圓之電鍍系 統,其中,該通電構件係設置於該片狀保持構件上。31062] .pic Page 15 2003.] 0.02. 039 580745 _ Case No. 88108029 ^ 1st of the year amended _ Sixth, the scope of patent application, wherein the ring gasket and the current-carrying member include an integral part. 79. The plating system for a semiconductor wafer as described in item 72 of the patent application scope, further comprising a sheet-shaped holding member for holding the semiconductor wafer together with the ring-shaped insulating member. 80. The plating system for a semiconductor wafer according to item 79 of the scope of the patent application, wherein the sheet-shaped holding member includes an insulating material. 8 1. The electroplating system for a semiconductor wafer as described in item 72 of the scope of patent application, wherein the current-carrying member is provided on the sheet-shaped holding member. 3]〇621.ptc 第16頁 2003. 10.02. 0403] 〇621.ptc Page 16 2003. 10.02. 040
TW88108029A 1997-12-15 1999-05-18 Electroplating jig for semiconductor wafers and apparatus for electroplating wafers TW580745B (en)

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JP36342897A JP3847434B2 (en) 1997-12-15 1997-12-15 Semiconductor wafer plating jig
JP1482798A JP4037504B2 (en) 1998-01-09 1998-01-09 Semiconductor wafer plating jig

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI410531B (en) * 2010-05-07 2013-10-01 Taiwan Semiconductor Mfg Vertical plating equipment and plating method thereof
TWI453858B (en) * 2007-10-29 2014-09-21 Mfg Integration Technology Ltd Device for supporting workpiece
CN104485308A (en) * 2014-12-25 2015-04-01 天津威盛电子有限公司 Pressurization fixture and method for curing resin package with pressurization fixture
CN109072475A (en) * 2016-03-22 2018-12-21 株式会社荏原制作所 Substrate holder and plater
TWI788155B (en) * 2021-12-23 2022-12-21 敔泰企業有限公司 Clamping device for wafer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI453858B (en) * 2007-10-29 2014-09-21 Mfg Integration Technology Ltd Device for supporting workpiece
TWI410531B (en) * 2010-05-07 2013-10-01 Taiwan Semiconductor Mfg Vertical plating equipment and plating method thereof
CN104485308A (en) * 2014-12-25 2015-04-01 天津威盛电子有限公司 Pressurization fixture and method for curing resin package with pressurization fixture
CN109072475A (en) * 2016-03-22 2018-12-21 株式会社荏原制作所 Substrate holder and plater
TWI788155B (en) * 2021-12-23 2022-12-21 敔泰企業有限公司 Clamping device for wafer

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