578232 五、發明說明（l) 一、 發明所屬之技術領域： 本發明係有關於一種乾式蝕刻電極之防蝕方法，特別 係有關於一種靜電吸附盤及電極的防蝕方法。 二、 先前技術： 一般乾式敍刻有滅擊I虫刻（s p u 11 e r i n g e t c h )、電激 姓刻’以及反應性離子I虫刻（Reactive i〇n Etch，Rijg)= 種方式。濺擊蝕刻藉對處於適當低壓狀態下容器内氣體施 以電壓’使彳于原本為中性的氣體分子被激發或解離成為帶 電，離子，這些離子被電極板間之電壓加速而對晶片表面 之薄膜進行轟擊，藉動量之轉移來執行蝕刻。電漿蝕^ (Plasma etch)則是利用電漿將反應氣體的分子，x 對=膜材質具有反應性的離子’然後 匕學反應，把暴露在電聚下的薄膜反 性=的 物’再以真空系統抽離而完成 成2 ”生成 刻法（R IE)則是一種介於濺擊蝕刻以〜及 反應式離子蝕 蝕刻技術。藉由結合物理與 、水蝕刻之間的乾 得到的一種兼具非等向性餘刻^ 膜的機構，而 蝕刻技術。 ” 及了接叉的選擇性的 而在一般乾式餘刻製程 100 (ESC)以進行夾捭，^ + 因吊〜用靜電吸附盤 心叮人符’除失持外，靜電 極二功能，其上設有氦氣孔"〇(如第、充當電 程中，產生於晶圓上之熱量。 移除在蝕刻過 第4頁 0548-9202TWF(Nl) ： 91159 ： Lemon.ptd 578232 五、發明說明（2) 靜電吸附盤1 0 0的詳細構造如第2圖所顯示的，係包括 一由陶瓷材料製成的承載盤1 〇 i，以及鋁質底座丨05 ,承載 盤101與底座105之間並有膠質層1〇3，以將承載盤1〇1以及 底座105黏合。而靜電吸附盤外圍一般會更設一以石英為 材質的覆蓋環1 2 0，該覆蓋環之功能在於提升蝕刻速率以 及姓刻均勻性。而晶圓1 3 0放置於承載盤1 〇 1上。 靜電吸附盤與其他的乾式蝕刻設備元件一樣，會因製 程的腐餘特性而損耗，如第3圖所顯示的，在經使用一段 時間後’承載盤1 〇 1會被腐蝕而產生圓角丨〇 2，如此不但會 造成該處上方的晶圓丨30散熱效果下降，還會增加氦氣外 漏的情形，影響晶圓1 3 〇邊緣的蝕刻電漿環境，降低蝕刻 的均勻丨生。而且膠質層丨〇 3也會因為被損耗而朝靜電吸附 盤的軸:方向内縮，因而降低晶圓130邊緣的散熱效果。 在一般情形下，上述的圓角1〇2以及膠質層1〇3損耗的 問題祐會影響晶圓I虫刻的均勻性，而在較敏感的製程中就 t影響晶圓邊緣的特性’造成所姓刻出來的形狀不是所要 狀。而上述的問題在更換靜電吸附盤之後，便可獲 得解決。 -、但4由你於静*電吸附盤價格昂責（每顆約為台幣1 1 4 2678 几），其使用奇命又不常（約為^ ^ ^ 38000片晶圓來計算，靜電吸“似作小時）纟以月度 顆，其成本相當^Λ及ϋ的需求量將近每個月要 盤被蝕刻而耗損的現象，以降；：為了要改善静電吸附 丨仏生產成本。578232 V. Description of the invention (l) 1. Technical field to which the invention belongs: The present invention relates to an anti-corrosion method for dry-etched electrodes, and in particular relates to an anti-corrosion method for electrostatic adsorption disks and electrodes. Second, the prior art: Generally, the dry-type engraving includes the killing insect engraving (s p u 11 e r i n g e t c h), the electric shock surname engraving ′, and the reactive ion I insect engraving (Reactive eon Etch, Rijg) = various ways. Sputter etching applies voltage to the gas in the container under a proper low pressure state, so that the gas molecules that are originally neutral are excited or dissociated to become charged, ions. These ions are accelerated by the voltage between the electrode plates to the wafer surface. The film is bombarded, and etching is performed by the transfer of momentum. Plasma etch ^ (Plasma etch) is the use of plasma to react the molecules of the reaction gas, x pair = reactive ions of the film material 'then the dagger reaction, and then the film exposed to the electropolymerization of the reactive = substances' The vacuum etching system is used to complete the 2 ”generation engraving method (R IE), which is a sputtering ion etching method and a reactive ion etching technology. It is obtained by combining the physical and water etching. It also has a non-isotropic film structure and an etching technology. ”And the selectivity of the fork, and it is clamped in a general dry mold process 100 (ESC) for entrapment, ^ + due to hanging ~ electrostatic adsorption In addition to the loss of control, Panxin Dingrenfu has two functions of a static electrode, which is provided with a helium hole " 〇 (such as the first, acting as an electrical path, the heat generated on the wafer. Removed in the etched page 4 0548-9202TWF (Nl): 91159: Lemon.ptd 578232 V. Description of the invention (2) The detailed structure of the electrostatic adsorption disc 100 is shown in FIG. 2 and includes a carrier disc 1 made of ceramic material. i, and aluminum base 丨 05, there is a colloidal layer 103 between the carrier plate 101 and the base 105, The carrier disk 101 and the base 105 are adhered. The outer surface of the electrostatic adsorption disk is generally provided with a quartz cover ring 120, whose function is to improve the etching rate and the uniformity of the engraving. The wafer 1 3 0 is placed on the carrier tray 〇1. Like other dry etching equipment components, the electrostatic adsorption tray will be lost due to the corrosion characteristics of the process, as shown in Figure 3, after a period of use, Disk 1 〇1 will be corroded to produce rounded corners 〇2. This will not only reduce the heat dissipation effect of the wafer above it, but also increase the leakage of helium gas, which will affect the etching of the edge of the wafer 1 30 The plasma environment reduces the uniformity of etching. In addition, the colloidal layer 3 will shrink inwardly toward the axis of the electrostatic adsorption disk due to loss, thereby reducing the heat dissipation effect at the edge of the wafer 130. In general, the above The problem of the rounded corners 102 and the colloidal layer 103 loss will affect the uniformity of the wafer I engraving, and in more sensitive processes, the characteristics of the wafer edges will be affected. Not what you want. The above problems can be solved after replacing the electrostatic adsorption discs.-, But 4 by you Yu Jing * Electromagnetic adsorption discs are extremely expensive (each one is about NT $ 1 4 2678), and they are not used very often. (Approximately ^ ^ ^ 38,000 wafers to calculate, static absorption "seems like an hour) 纟 monthly, its cost is equivalent to ^ Λ and the demand of ϋ will be etched and discarded every month to reduce the phenomenon; : In order to improve electrostatic adsorption, it is necessary to reduce production costs.
0548-9202™F(Nl) ： 91159 ： Lemon.ptd $ 5頁 578232 五、發明說明（3) 三、發明内容 本發明之 餘刻電極，包 座包括一底部 包括一第一側 第二側壁以及 面以及該側壁 本發明乃 上表面等亦遭 電吸附盤遭到 好，可減少甚 本低廉，所以 目的係為了要解決上述問題而提供 一底座，一承載盤，以及一防蝕 一凸出部，底部包括一上表面 承載盤設於該凸出部上，承載 載面。防蝕膠膜設於該上表面 以及 聲 〇 一承 電吸附 的部位 而損耗 免靜電 幅降低 盤的承載面、側壁，以 ，覆蓋一層防蝕膠膜， 。由於該防蝕膠膜的防 吸附盤的更換。且防蝕 生產成本。 一種乾式 膠膜。底 ，凸出部 盤包括一 、該承載 及底座的 以避免靜 名虫效果良 膠膜的成 實施方式： 本發明的實施方式，如第4圖所顯示的，係在一靜電 吸附盤（電極）表面上黏附一層耐蝕材料15〇。該電極包枯 一底座105以及一承載盤ιοί。底座1〇5包括一底部以及〆 凸出部，底部包括一上表面106，凸出部包括一第一側璧 1 〇 7。承載盤1 〇 1設於該凸出部上 側壁1 0 8以及一承載面1 〇 9。 為防止該靜電吸附盤被腐蝕 四 承載盤1 0 1包括一第二 耐蝕材料1 5 0的黏附部 位，主要分三部位· 第一，承載面1 〇 9的邊緣，由於？批 ^ ^ 田於承载盤1 0 1的中央部位 其上放置有晶圓，因此不易被腐蝕，唯 ，有承載面109的邊 0548-9202TWF(Nl) ： 91159 ； Lemon.ptd 第6頁 五、發明說明（4) ___ 緣易遭腐蝕，而造成圓角的產生， 邊緣設置耐蝕材料丨5〇，可防止圓因此，在承載面109的 產生所帶來的導熱不均及氦氣外漏姆的產生，並避免圓角 於耐蝕材料150為軟性材質，所以卷^力"的問題。此外，由 之承載面1 09後，其邊緣部位盥耐:晶圓放置於承載盤1 0 1 的貼合狀況’ ▼進一步的防止氦氣的材外料:。〇將形成更緊密 辟、ί:側：)一 以及第二側壁108(靜電吸附盤側 ί钱太' JL«诚，A防止第一側壁107以及第二側壁108遭 =3’損耗所疋Λ /質層103被侵餘而損耗，可解決膠質 層103耗所產生的散熱效果下降的問題。 第一 Λ表面1〇6 ’可防止該靜 面106被腐蝕。 & & j I π ^而上述的耐蝕材料，可使用聚醯亞胺，特別可使用全 芳香族聚酿亞胺]其厚度約為〇 · 0 2 5公釐〜0 · 1 2 5公釐。 、而由於在半導體乾蝕刻製程中，其乾蝕刻機台的形式 並不獨為上述使用靜電吸附盤的形式，亦有如第5a圖所顯 不的’利用夾具21 0將晶圓2 30固定於電極20 0的狀況，同 樣的’電極2⑽也會有被腐钱的情形，且電極2GG被腐餘後 也會產生氮虱外漏’散熱不良，蝕刻效果不均勻等問題。 因此’如第5 b圖所顯示的，若其乾蝕刻機台的形式為晶圓 2 3 0直接固疋於電極2 〇 〇的狀況，此時亦可以將本發明之耐 ㈣㈣〇黏附於電極2〇〇上，卩達到防止電極2〇〇被腐触 的效果。 電極200包括—底部以及一凸出部。底部包括一上表0548-9202 ™ F (Nl): 91159: Lemon.ptd $ 5 pages 578232 V. Description of the invention (3) III. Summary of the invention The electrode of the present invention includes a bottom including a first side, a second side wall and The surface and the side wall of the present invention and the upper surface are also well received by the electro-adhesive disk, which can reduce the cost significantly, so the purpose is to provide a base, a bearing disk, and an anti-corrosion-projecting portion in order to solve the above problems. The bottom portion includes an upper surface bearing plate provided on the protruding portion and bearing the bearing surface. The anti-corrosion film is arranged on the upper surface and the acoustically absorbing part, which is loss-free and avoids static electricity. The load-bearing surface and side wall of the disc are covered with a layer of anti-corrosion film. Due to the replacement of the anti-adhesive disk of the anti-corrosion film. And anti-corrosion production costs. A dry adhesive film. At the bottom, the protruding part disk includes one, an embodiment of a good adhesive film of the bearing and the base to avoid the effect of anonymous insects: The embodiment of the present invention, as shown in FIG. 4, is an electrostatic adsorption disk (electrode ) A layer of corrosion resistant material 15 is adhered to the surface. The electrode is covered with a base 105 and a carrier plate. The base 105 includes a bottom and a projection ，, the bottom includes an upper surface 106, and the projection includes a first side 璧 107. A supporting plate 101 is provided on the protruding portion with a side wall 108 and a supporting surface 109. In order to prevent the electrostatic adsorption disk from being corroded. 4. The carrier disk 101 includes a second adhesion part of a corrosion-resistant material 150, which is mainly divided into three parts. First, the edge of the carrier surface 109, because? Lot ^ ^ A wafer is placed on the central part of the carrier plate 1 01, so it is not easy to be corroded. However, the side with the carrier surface 109 0548-9202TWF (Nl): 91159; Lemon.ptd Page 6 Description of the Invention (4) ___ The edge is easily corroded, which causes the generation of fillets. The edge is provided with a corrosion-resistant material 丨 50, which can prevent the circle. Therefore, the uneven heat conduction caused by the generation of the bearing surface 109 and helium leakage And avoid the problem of rounded corners because the corrosion-resistant material 150 is a soft material. In addition, after the bearing surface 1 09, the edge position is resistant: the bonding condition of the wafer placed on the carrier plate 1 01 '▼ Further material protection against helium gas :. 〇 will form a more compact, :: side :) and a second side wall 108 (the side of the electrostatic adsorption plate 钱 Qian Tai 'JL «sincere, A to prevent the first side wall 107 and the second side wall 108 from = 3' loss 疋 Λ / The mass layer 103 is depleted and depleted, which can solve the problem that the heat dissipation effect of the colloidal layer 103 is reduced. The first Λ surface 106 'can prevent the static surface 106 from being corroded. &Amp; & j I π ^ For the above-mentioned corrosion-resistant material, polyimide can be used, and in particular, fully aromatic polyimide can be used.] Its thickness is about 0.025 mm to 0. 125 mm. In the etching process, the form of the dry etching machine is not the same as the above-mentioned form using the electrostatic adsorption disk. There is also a situation where the wafer 2 30 is fixed to the electrode 20 0 by using the clamp 21 0 as shown in Fig. 5a. "Electrode 2⑽ may also be rotten, and electrode 2GG will also produce nitrogen lice after leakage." Poor heat dissipation, uneven etching effect, etc. Therefore, as shown in Figure 5b, if The form of the dry etching machine is a condition where the wafer 230 is directly fixed to the electrode 2000, and at this time, In the present invention ㈣㈣〇-resistant adhesion on the electrode 2〇〇, Jie achieve the effect of preventing the rot 2〇〇 electrode 200 includes a contact electrode - bottom comprises a bottom part and a projection on a table
578232 五、發明說明（5) — Γ」6側二出部設於該底部上，凸出部包括-承載面，以 7 (Π u 7。而耐蝕材料2 5 〇則覆蓋於上表面2 Ο β、側壁 果。7載面2 〇 9上’以達到防止電極2 0 0被腐蝕的效 3 0 0如笛r =中所用的耐姓材料’亦可製作成一防钱膠膜 iL靜雷哄回所顯不的，用以遮蓋於一靜電吸附盤上，以防 邻31 0 B J付盤被腐餘而影響#刻品f ’包括’—第一耐餘 吸附般’Λ以黏於靜電吸附盤之晶圓承載面’ w止靜電 承：面被腐…第二割㈣，設於第 ^ 以黏於靜電吸附盤之側壁，以防止靜電 之側壁被腐餘。—第三耐触部33〇， 電 吸附盤底座之上表面诎府^底 上表面，以防止靜電 方法，圖所腐1虫。其設置狀況一如前述的實施 第iΐ Γ對上述之防㈣膜3 0 0的則大特徵進行描述， ==°辟呈：中-央鏤空的圓盤狀，第二耐飯侧呈 狀。、、貝土 第二耐蝕部330呈一中央鏤空的圓盤 圓直：ί ί: :::亦可應用於乾钱刻機台的形式為晶 以達到防i的Γΐ況。將防㈣膜黏附於電極之上， 盤的i:之防姓膠膜可利用黏貼的方式黏附於該靜電吸附 利用本發明之防蝕方法’若以月產38_片晶圓來計 第8頁 〇548-92〇2TWF(Nl); 91159 ；Lem〇n.ptd 578232 五、發明說明（6) 算，一個月可省下大約台幣一千五百萬的成本，一年可省 下高達一億七千萬的成本，因此本發明可為半導體廠節省 魔大的成本。 雖然本發明已於較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此項技藝者，在不脫離本發明之精 神和範圍内，仍可作些許的更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者為準。 参578232 V. Description of the invention (5) — Γ ″ 6 side two outlets are provided on the bottom, and the convex portion includes a bearing surface, with 7 (Π u 7. The corrosion resistant material 2 5 〇 covers the upper surface 2 〇 β, side wall fruit. 7 on the surface 2 0 09 'to achieve the effect of preventing the electrode 2 0 from being corroded 3 0 0 such as the surname material used in r =' can also be made into an anti-money film iL static lightning coax What is not displayed is used to cover an electrostatic adsorption plate to prevent the adjacent 31 0 BJ tray from being affected by rot. # 刻 品 f 'include'—the first resistance to residual adsorption' Λ to stick to electrostatic adsorption The wafer carrying surface of the disk is not static-resistant: the surface is rotted ... The second cut is placed on the ^ to adhere to the side wall of the electrostatic adsorption disk to prevent the side wall of static electricity from being corroded.-The third contact-resistant portion 33 〇, the upper surface of the base of the electro-adhesive plate is 诎 the upper surface of the bottom, in order to prevent static electricity, the insects are rotten. The installation conditions are as described above. The characteristics are described, == ° is shown: a central-central hollowed disc shape, the second rice-resistant side is shaped., And the second corrosion-resistant part 330 of Beitui has a central hollow circle Pan Yuanzhi: ί ί :::: can also be applied to dry money engraving machine in the form of crystals to achieve the Γ 防 condition of anti-i. Adhesive film is adhered to the electrode. Adhesive method can be used to adhere to the electrostatic adsorption using the anti-corrosion method of the present invention. 'If the monthly output of 38 wafers is counted, page 8 〇548-92〇2TWF (Nl); 91159; Lem〇n.ptd 578232 5 6. Description of the invention (6) It is calculated that one month can save the cost of about 15 million Taiwan dollars, and one year can save up to 170 million costs, so the invention can save magic costs for semiconductor factories. Although the present invention has been disclosed as above in the preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can still make a few changes and decorations without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application.
0548-9202TWF(Nl) ； 91159 ； Lemon.ptd 第9頁 578232 圖式簡單說明 第1圖係顯示靜電吸附盤的俯視圖； 第2圖係顯示靜電吸附盤以及其周邊零件的設置狀態 圖； 第3圖係顯示靜電吸附盤遭侵蝕而損耗的狀態圖； 第4圖係顯示本發明之防蝕方法的實施狀態圖； 第5 a圖係顯不晶圓直接固定於電極的乾餘刻機台之設 置狀態圖； 第5b圖係顯示本發明之防蝕方法於晶圓直接固定於電 極的乾蝕刻機台之實施狀態圖； 第6圖係顯示本發明之防蝕膠膜的立體圖。 符號說明： 100〜 靜電吸附盤； 1 10 氦氣孔； 101〜 承載盤； 102 圓角； 103〜 膠質層； 105 底座， 106〜 上表面； 107 第一側壁； 108〜 第二側壁； 109 承載面； 120〜 覆蓋環； 130 晶圓 ， 150〜 而寸餘材料， 200 電極； 20 6〜 上表面， 207 側壁； 2 0 9〜 承載面； 210 夾具； 2 3 0〜 晶圓， 250 耐li材料； 3 0 0〜 防蝕膠膜； 310 第一而寸餘部； 32 0〜 第二耐蝕部； 330 第三耐蝕部。0548-9202TWF (Nl); 91159; Lemon.ptd Page 9 578232 Brief description of the diagram. Figure 1 shows the top view of the electrostatic adsorption disk; Figure 2 shows the state diagram of the electrostatic adsorption disk and its surrounding parts; Figure 4 shows the state of the electrostatic adsorption disk being eroded and lost; Figure 4 shows the state of implementation of the anti-corrosion method of the present invention; Figure 5a shows the setup of a dry-etching machine where the wafer is directly fixed to the electrode State diagram; Fig. 5b is a diagram showing a state of implementation of the anti-corrosion method of the present invention on a dry etching machine where a wafer is directly fixed to an electrode; and Fig. 6 is a perspective view of an anti-corrosion film of the present invention. Explanation of symbols: 100 ~ electrostatic adsorption plate; 1 10 helium holes; 101 ~ load plate; 102 rounded corners; 103 ~ colloid layer; 105 base, 106 ~ upper surface; 107 first side wall; 108 ~ second side wall; 109 bearing surface 120 ~ cover ring; 130 wafers, 150 ~ inch material, 200 electrodes; 20 6 ~ upper surface, 207 side wall; 2 0 9 ~ bearing surface; 210 fixture; 2 3 0 ~ wafer, 250 Li-resistant material ; 3 0 0 ~ anti-corrosion film; 310 first and inch remaining part; 32 0 ~ second corrosion resistant part; 330 third corrosion resistant part.
0548-9202TWF(Nl) ； 91159 ； Lemon.ptd 第10頁0548-9202TWF (Nl); 91159; Lemon.ptd page 10