TWI517294B - A method of forming a resin bump on a substrate mounting surface, and a resin protruding layer transfer member - Google Patents
A method of forming a resin bump on a substrate mounting surface, and a resin protruding layer transfer member Download PDFInfo
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- TWI517294B TWI517294B TW100126182A TW100126182A TWI517294B TW I517294 B TWI517294 B TW I517294B TW 100126182 A TW100126182 A TW 100126182A TW 100126182 A TW100126182 A TW 100126182A TW I517294 B TWI517294 B TW I517294B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Description
本發明係關於在基板處理裝置之處理室內載置基板之基板載置台、在該基板載置台之基板載置面形成樹脂突起物層之方法及適用於該方法之樹脂突起物層轉印構件。 The present invention relates to a substrate mounting table on which a substrate is placed in a processing chamber of a substrate processing apparatus, a method of forming a resin protrusion layer on a substrate mounting surface of the substrate mounting table, and a resin protrusion layer transfer member applied to the method.
在以液晶顯示裝置(LCD)為首之FPD(Flat Panel Display)之製造工程中，所知的有對以玻璃基板為首之各種基板施予電漿處理之基板處理裝置。 In a manufacturing process of an FPD (Flat Panel Display) including a liquid crystal display device (LCD), a substrate processing apparatus that applies plasma treatment to various substrates including a glass substrate is known.
在如此之基板處理裝置中，具有在處理室(以下，稱為「腔室」)內支撐玻璃基板(以下，單稱為「基板」)之基板載置台，配置成隔著該基板載置台和處理空間而對向之上部電極，對當作下部電極而發揮功能之基板載置台施加電漿生成用之高頻電力(RF)，並且導入處理氣體至處理空間而生成電漿，並使用所生成之電漿而對被載置在基板載置台之基板載置面之基板施予特定之電漿處理。 In such a substrate processing apparatus, a substrate mounting table that supports a glass substrate (hereinafter simply referred to as a "substrate") in a processing chamber (hereinafter referred to as a "chamber") is disposed so as to be interposed between the substrate mounting table and The high-frequency electric power (RF) for plasma generation is applied to the substrate mounting table functioning as the lower electrode, and the processing gas is introduced into the processing space to generate plasma, and is generated by using the upper surface electrode. The plasma is subjected to a specific plasma treatment on the substrate placed on the substrate mounting surface of the substrate stage.
在基板載置台之基板載置面通常形成有氧化鋁(AL2O3)熔射膜以當作絕緣層。構成氧化鋁熔射膜之氧化鋁之硬度為HV1000左右，因為較一般玻璃基板之硬度的HV640硬，故當將基板載置於基板載置台，藉由靜電吸盤進行靜電吸附之時，有由於氧化鋁熔射膜使得基板之背面刮傷之問題。 An alumina (AL 2 O 3 ) spray film is usually formed on the substrate mounting surface of the substrate stage as an insulating layer. The hardness of the alumina constituting the alumina spray film is about HV1000. Since the hardness of the HF640 is harder than that of the general glass substrate, when the substrate is placed on the substrate stage and electrostatically adsorbed by the electrostatic chuck, it is oxidized. Aluminum spray film causes scratching of the back side of the substrate.
另外，於平面狀之基板載置面載置基板之時，則有容 易在基板之背面附著異物之問題，為了迴避此，嘗試在基板載置面形成突起物層而以點接觸支撐基板，開發在基板載置面形成具有多數突起之突起層的技術(例如，參照專利文獻1)。 In addition, when the substrate is placed on the planar substrate mounting surface, there is a capacity In order to avoid the problem of attaching foreign matter to the back surface of the substrate, it is attempted to form a protruding layer on the substrate mounting surface and contact the supporting substrate in a point contact manner, thereby developing a technique of forming a protruding layer having a plurality of protrusions on the substrate mounting surface (for example, refer to Patent Document 1).
[專利文獻1]日本特開2008-251574號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-251574
但是，為了防止塵埃等之異物附著，並且不會使基板之背面刮傷，必須在基板載置面形成由硬度較基板之材質的玻璃小之材料所構成之突起。再者，要一次在基板載置面形成多數突起物非常困難。 However, in order to prevent foreign matter such as dust from adhering and scratching the back surface of the substrate, it is necessary to form a projection made of a material having a hardness smaller than that of the substrate material on the substrate mounting surface. Furthermore, it is very difficult to form a plurality of protrusions on the substrate mounting surface at one time.
然而，硬度小於玻璃之材料，以可以在基板處理裝置之處理室內適用者而言，可舉出例如聚四氟乙烯(商品名稱：鐵氟龍(註冊商標))等之樹脂。就以將鐵氟龍(註冊商標)膜或由鐵氟龍(註冊商標)所構成之突起物轉印至構成構件表面之方法而言，雖然一般採用藉由靜電粉體塗裝使由鐵氟龍(註冊商標)所構成之粉吸附於被轉印面而加熱至400℃之燒附方法，但是基板載置台之耐熱溫度為例如100℃以下，無法採用如此之燒附方法。 However, the resin having a hardness smaller than that of the glass may be, for example, a resin such as polytetrafluoroethylene (trade name: Teflon (registered trademark)). In the method of transferring a Teflon (registered trademark) film or a protrusion composed of Teflon (registered trademark) to the surface of the constituent member, although it is generally applied by electrostatic powder coating, it is made of iron fluoride. The method in which the powder composed of the dragon (registered trademark) is adsorbed on the transfer surface and heated to 400° C., but the heat resistance temperature of the substrate stage is, for example, 100° C. or less, and such a baking method cannot be employed.
本發明之第1課題係提供可以在基板載置台之基板載 置面一次形成由多數樹脂突起物所構成之樹脂突起物層之樹脂突起物層轉印構件。再者，本發明之第2課題係提供不用加熱基板載置台可以在基板載置面形成樹脂突起物層的在基板載置面形成樹脂突起物層之方法。 A first object of the present invention is to provide a substrate loadable on a substrate mounting table. A resin protrusion layer transfer member which forms a resin protrusion layer composed of a plurality of resin protrusions is formed at a time. According to a second aspect of the present invention, there is provided a method of forming a resin protrusion layer on a substrate mounting surface by forming a resin protrusion layer on a substrate mounting surface without heating the substrate mounting table.
為了解決上述第1課題，申請專利範圍第1項所記載之樹脂突起物層轉印構件，係用以在對矩形之基板施予電漿處理之基板處理裝置之處理室內載置上述基板之基板載置台之基板載置面，轉印樹脂突起物層，該樹脂突起物層轉印構件之特徵為：具有基材片、被塗佈在該基材片之單面的第1黏著劑層，和被貼附於該第1黏著劑層之樹脂突起物層，和被塗佈於該樹脂突起物層之第2黏著劑層。 In order to solve the above-described first problem, the resin projection layer transfer member according to the first aspect of the invention is a substrate on which the substrate is placed in a processing chamber of a substrate processing apparatus that applies a plasma treatment to a rectangular substrate. The substrate mounting surface of the mounting table transfers a resin protrusion layer, and the resin protrusion layer transfer member is characterized by having a substrate sheet and a first adhesive layer coated on one surface of the substrate sheet. And a resin protrusion layer attached to the first adhesive layer and a second adhesive layer applied to the resin protrusion layer.
申請專利範圍第2項所記載之樹脂突起物層轉印構件，係在申請專利範圍第1項所記載之樹脂突起物層轉印構件中，上述樹脂突起物層係以2~10mm間距配列多數剖面為0.5~2.0mm ，高度30~80μm之圓柱狀之樹脂突起物者。 The resin projection layer transfer member according to the second aspect of the invention is the resin projection layer transfer member according to the first aspect of the invention, wherein the resin protrusion layer is arranged at a pitch of 2 to 10 mm. Profile is 0.5~2.0mm A cylindrical resin protrusion having a height of 30 to 80 μm.
申請專利範圍第3項所記載之樹脂突起物層轉印構件，係在申請專利範圍第1或2項所記載之樹脂突起物層轉印構件中，上述樹脂突起物係以聚四氟乙烯、環氧樹脂、矽樹脂、聚醯亞胺樹脂、聚醚醯亞胺樹脂及耐熱性橡膠中之任一者所構成。 The resin projection layer transfer member according to the first or second aspect of the invention, wherein the resin projection is made of polytetrafluoroethylene, Any of epoxy resin, enamel resin, polyimine resin, polyether quinone resin, and heat resistant rubber.
申請專利範圍第4項所記載之樹脂突起物層轉印構 件，係在申請專利範圍第1或2項所記載之樹脂突起物層轉印構件中，上述第2黏著劑層和上述基板載置面之黏著力，大於上述第1黏著劑層和上述樹脂突起物層之黏著力。 Resin protrusion layer transfer structure described in item 4 of the patent application scope In the resin projection layer transfer member according to the first or second aspect of the invention, the adhesion between the second adhesive layer and the substrate mounting surface is larger than the first adhesive layer and the resin. The adhesion of the raised layer.
申請專利範圍第5項所記載之樹脂突起物層轉印構件，係申請專利範圍第1或2項所記載之樹脂突起物層轉印構件中，在上述第2黏著劑層上貼附保護片。 The resin projection layer transfer member according to claim 5, wherein the resin projection layer transfer member according to claim 1 or 2, wherein the protective sheet is attached to the second adhesive layer .
為了解決上述第2課題，申請專利範圍第6項所記載之在基板載置面形成樹脂突起物層之方法，係用以在對矩形之基板施予電漿處理之基板處理裝置之處理室內載置上述基板之基板載置台之基板載置面，形成樹脂突起物層，該方法之特徵為具有：貼附步驟，該步驟係將被塗佈於樹脂突起物層轉印構件之上述樹脂突起物層的第2黏著劑層推壓於上述基板載面，而將上述樹脂突起物層貼附在上述基板載置面，且該樹脂突起物層轉印構件具有基材片和在該基材片的單面隔著第1黏著劑層而被貼附脂樹脂突起物層，和被塗佈在該樹脂突起物層之第2黏著劑層；和基材片剝離步驟，該步驟係從上述貼附之樹脂突起物層剝開上述基材片。 In order to solve the above-described second problem, the method of forming a resin protrusion layer on a substrate mounting surface described in the sixth aspect of the patent application is for processing a chamber processing device for applying a plasma treatment to a rectangular substrate. The substrate mounting surface of the substrate mounting table of the substrate is formed to form a resin protrusion layer. The method is characterized in that the method includes a bonding step of applying the resin protrusion to the resin protrusion layer transfer member. The second adhesive layer of the layer is pressed against the substrate carrier surface, and the resin protrusion layer is attached to the substrate mounting surface, and the resin protrusion layer transfer member has a substrate sheet and the substrate sheet. a single resin layer is attached to the resin layer, and a second adhesive layer is applied to the resin protrusion layer on one side of the first adhesive layer; and a substrate sheet peeling step is performed from the above-mentioned sticker The base material sheet is peeled off with the resin protrusion layer.
申請專利範圍第7項所記載之在基板載置面形成樹脂突起物層之方法，係在申請專利範圍第6項所記載之在基板載置面形成樹脂突起物層之方法中，上述樹脂突起物層係以2~10mm間距配列多數剖面為0.5~2.0mm ，高度30~80μm之圓柱狀之樹脂突起物者。 The method of forming a resin protrusion layer on a substrate mounting surface according to the seventh aspect of the invention is the method of forming a resin protrusion layer on a substrate mounting surface according to the sixth aspect of the invention, wherein the resin protrusion The layer is arranged at a pitch of 2~10mm. Most sections are 0.5~2.0mm. A cylindrical resin protrusion having a height of 30 to 80 μm.
申請專利範圍第8項所記載之在基板載置面形成樹脂突起物層之方法中，係在申請專利範圍第6或7項所記載之在基板載置面形成樹脂突起物層之方法中，上述樹脂突起物係以聚四氟乙烯、環氧樹脂、矽樹脂、聚醯亞胺樹脂、聚醚醯亞胺樹脂及耐熱性橡膠中之任一者所構成。 In the method of forming a resin protrusion layer on the substrate mounting surface described in the eighth aspect of the invention, in the method of forming a resin protrusion layer on the substrate mounting surface described in claim 6 or 7, The resin protrusions are composed of any one of polytetrafluoroethylene, epoxy resin, enamel resin, polyimide resin, polyether quinone resin, and heat resistant rubber.
如申請專利範圍第9項所記載之在基板載置面上形成樹脂突起物層之方法，係在申請專利範圍第6或7項所記載之基板載置面形成樹脂突起物層之方法中，在前述基板載置面形成有氧化鋁熔射膜，上述第2黏著劑層和上述氧化鋁熔射膜之黏著力，大於上述第1黏著劑層和上述樹脂突起物層之黏著力。 A method of forming a resin protrusion layer on a substrate mounting surface as described in claim 9 is a method of forming a resin protrusion layer on a substrate mounting surface according to claim 6 or 7, An alumina spray film is formed on the substrate mounting surface, and an adhesive force between the second adhesive layer and the aluminum oxide spray film is greater than an adhesion between the first adhesive layer and the resin protrusion layer.
申請專利範圍第10項所記載之基板載置面形成樹脂突起物層之方法，係在申請專利範圍第6或7項所記載之在基板載置面形成樹脂突起物層之方法中，上述樹脂突起物層轉印構件之上述第2黏著劑層貼附保護片，在上述貼附步驟之前段，具有剝離上述保護片之保護片剝離步驟。 A method of forming a resin protrusion layer on a substrate mounting surface according to claim 10, in the method of forming a resin protrusion layer on a substrate mounting surface described in claim 6 or 7, the resin The second adhesive layer of the projection layer transfer member is attached with a protective sheet, and has a protective sheet peeling step of peeling off the protective sheet before the attaching step.
申請專利範圍第11項所記載之在基板載置面形成樹脂突起物層之方法，係在如申請專利範圍第6或7項所記載之在基板載置面形成樹脂突起物層之方法中，在上述基材片剝離步驟之後段，具有以覆蓋被貼附於上述基板載置面之上述樹脂突起物層之方式塗佈塗層劑的塗佈步驟。 The method of forming a resin protrusion layer on a substrate mounting surface according to the invention, in the method of forming a resin protrusion layer on a substrate mounting surface as described in claim 6 or 7, In the subsequent stage of the substrate sheet peeling step, a coating step of applying a coating agent so as to cover the resin protrusion layer attached to the substrate mounting surface is provided.
若藉由本發明之基板載置台時，則不會有因基板載置 面之材質而使得被載置在基板載置面之基板的背面刮傷之情形。再者，若藉由本發明之樹脂突起物層轉印構件時，可以在基板載置台之基板載置面一次形成由多數樹脂突起物所構成之樹脂突起物層。再者，若藉由在本發明之基板載置面形成樹脂突起物層之方法時，則可以不用加熱基板載置台，在基板載置面形成樹脂突起物層。 When the substrate mounting table of the present invention is used, there is no substrate placement. The material of the surface causes scratches on the back surface of the substrate placed on the substrate mounting surface. In addition, when the resin projection layer transfer member of the present invention is used, a resin protrusion layer composed of a plurality of resin projections can be formed at a time on the substrate mounting surface of the substrate stage. In addition, when the resin projection layer is formed on the substrate mounting surface of the present invention, the resin projection layer can be formed on the substrate mounting surface without heating the substrate mounting table.
以下，針對本發明之實施型態，一面參照圖面一面予以詳細說明。 Hereinafter, the embodiment of the present invention will be described in detail with reference to the drawings.
第1圖為表示適用與本發明之實施型態有關之基板載置台之基板處理裝置之概略構成的剖面圖。該基板處理裝置為對例如液晶顯示裝置(LCD)製造用之玻璃基板施予特定電漿處理。 Fig. 1 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus to which a substrate mounting table according to an embodiment of the present invention is applied. The substrate processing apparatus applies a specific plasma treatment to, for example, a glass substrate for manufacturing a liquid crystal display device (LCD).
在第1圖中，基板處理裝置10具有收容例如一邊為數m之矩形之玻璃基板G(以下，單稱為「基板」)之處理室(腔室)11，在該腔室11內部之圖中下方配置有載置基板G之載置台(承載器)12。承載器12係由例如表面被氧皮鋁處理之由鋁形成的基材13所構成，基材13係經絕緣構件14而被支撐於腔室11之底部。基材13剖面呈凸型，在上部配置內藏有靜電電極板16之靜電吸盤54，在其上部平面成為載置基板G之基板載置面13a。 In the first embodiment, the substrate processing apparatus 10 has a processing chamber (chamber) 11 for accommodating, for example, a rectangular glass substrate G (hereinafter simply referred to as "substrate") having a length of several m, and is shown in the inside of the chamber 11. A mounting table (carrier) 12 on which the substrate G is placed is disposed below. The carrier 12 is composed of, for example, a substrate 13 made of aluminum whose surface is treated with aluminum oxide, and the substrate 13 is supported by the insulating member 14 at the bottom of the chamber 11. The base material 13 has a convex shape in cross section, and an electrostatic chuck 54 in which the electrostatic electrode plate 16 is housed is disposed on the upper portion, and the substrate mounting surface 13a on which the substrate G is placed is formed on the upper plane.
以包圍基板載置面13a之周圍之方式設置有當作遮蔽構件之遮蔽環15，遮蔽環15係由以例如氧化鋁等之絕緣性 陶磁所構成之長條狀物之環狀構成構件之組合體所構成。 The shielding ring 15 serving as a shielding member is provided so as to surround the periphery of the substrate mounting surface 13a, and the shielding ring 15 is insulated by, for example, alumina. The combination of the annular constituent members of the long strips formed by the ceramic magnet.
在靜電電極板16連接有直流電源17，當對靜電電極板16施加正的直流電壓時，則在被載置於基板載置面13a之基板G中之靜電電極板16側之面(以下，稱為「背面」)產生負電位，依此在靜電電極板16及基板G之背面之間產生電位差，因該電位差引起之庫倫力或強生拉別克(Johnsen-Rahbek)力，基板G被吸附保持於基板載置面13a。 The DC power source 17 is connected to the electrostatic electrode plate 16, and when a positive DC voltage is applied to the electrostatic electrode plate 16, the surface of the substrate G placed on the substrate mounting surface 13a on the side of the electrostatic electrode plate 16 (hereinafter, The "back side" generates a negative potential, and accordingly a potential difference is generated between the electrostatic electrode plate 16 and the back surface of the substrate G, and the substrate G is adsorbed and held due to the Coulomb force or the Johnsonsen-Rahbek force caused by the potential difference. The substrate mounting surface 13a.
在基材13之內部，設置有用以調節基材13及被載置於基板載置面13a之基板G之溫度的溫度調節基構(省略圖示)。對該溫度調節機構，循環供給例如冷卻水或潤滑油(GALDEN註冊商標)等之冷媒，藉由該冷媒被冷卻之基材13冷卻基板G。 Inside the substrate 13, a temperature adjustment substrate (not shown) for adjusting the temperature of the substrate 13 and the substrate G placed on the substrate mounting surface 13a is provided. The temperature adjustment mechanism circulates, for example, a refrigerant such as cooling water or lubricating oil (GALDEN registered trademark), and the substrate 13 is cooled by the substrate 13 whose refrigerant is cooled.
在基材13之周圍配置有當作覆蓋包含遮蔽環15和基材13之抵接部的側面之遮蔽構件之絕緣環18。絕緣環18係由絕緣性之陶瓷例如氧化鋁所構成。 An insulating ring 18 as a shielding member covering the side surface including the shielding ring 15 and the abutting portion of the base material 13 is disposed around the base material 13. The insulating ring 18 is made of an insulating ceramic such as alumina.
在貫通腔室11之底壁、絕緣構件14及基材13之貫通孔，升降銷21被插通成可升降。升降銷21係在被載置於基板載置面13a之基板G搬入及搬出時作動時，於將基板G搬入至腔室11內之時或從腔室11搬出之時，上升至承載器12之上方之搬運位置，除此之外時以埋設狀態被收容在基板載置面13a內。 The lift pin 21 is inserted into the through hole of the bottom wall of the chamber 11 and the insulating member 14 and the base material 13 so as to be movable up and down. When the lift pin 21 is actuated during loading and unloading of the substrate G placed on the substrate mounting surface 13a, the lift pin 21 rises to the carrier 12 when the substrate G is carried into the chamber 11 or when it is carried out from the chamber 11. The transport position above is stored in the substrate mounting surface 13a in an embedded state.
在基板載置面13a開口有省略圖示之複數導熱氣體供給孔。複數之導熱氣體供給孔係連接於導熱氣體供給部， 從導熱氣體供給部供給作為導熱氣體例如氦(He)氣至基板載置面13a及基板G之背面之間隙。被供給至基板載置面13a及基板G之背面之間隙的氦氣體係有效果地將基板G之熱傳達至承載器12。 A plurality of heat transfer gas supply holes (not shown) are opened in the substrate mounting surface 13a. a plurality of heat conduction gas supply holes are connected to the heat conduction gas supply unit, A gap which is a heat transfer gas such as helium (He) gas to the back surface of the substrate mounting surface 13a and the substrate G is supplied from the heat transfer gas supply unit. The helium gas system supplied to the gap between the substrate mounting surface 13a and the back surface of the substrate G effectively transmits the heat of the substrate G to the carrier 12.
在承載器12之基材13，經整合器24連接有用以供給高頻電力之高頻電源23。從高頻電源23施加例如13.56MHz之高頻電力(RF)，承載器12係當作下部電極而發揮功能。整合器24係降低來自承載器12之高頻電力之反射，使供給至高頻電力之承載器12的供給效率成為最大。 A high frequency power source 23 for supplying high frequency power is connected to the substrate 13 of the carrier 12 via the integrator 24. A high frequency power (RF) of, for example, 13.56 MHz is applied from the high frequency power source 23, and the carrier 12 functions as a lower electrode. The integrator 24 reduces the reflection of the high frequency power from the carrier 12, and maximizes the supply efficiency of the carrier 12 supplied to the high frequency power.
在該基板處理裝置10中藉由腔室11之內側壁和承載器12之側面，形成側方排氣路26。該側方排氣口26經排氣管27連接排氣裝置28。當作排氣裝置28之TMP(Turbo Molecular Pump)及DP(Dry Pump)(皆省略圖示)係將腔室11內予以抽真空而減壓。具體而言，DP係將腔室11內從大氣壓減壓至中真空狀態(例如，1.3×10Pa(0.1Torr)以下)，TMP與DP合作將腔室11內減壓至低於中真空狀態之壓力的高真空狀態(例如，1.3×10-3Pa(1.0×10-5Torr)以下)。並且，腔室11內之壓力藉由APC閥(省略圖示)而被控制。 In the substrate processing apparatus 10, a side exhaust path 26 is formed by the inner side wall of the chamber 11 and the side surface of the carrier 12. The side exhaust port 26 is connected to the exhaust unit 28 via an exhaust pipe 27. The TMP (Turbo Molecular Pump) and the DP (Dry Pump) (both of which are not shown) as the exhaust device 28 evacuate the inside of the chamber 11 to reduce the pressure. Specifically, the DP system decompresses the inside of the chamber 11 from atmospheric pressure to a medium vacuum state (for example, 1.3×10 Pa (0.1 Torr) or less), and the TMP cooperates with the DP to decompress the chamber 11 to a state lower than the medium vacuum state. A high vacuum state of pressure (for example, 1.3 × 10 -3 Pa (1.0 × 10 -5 Torr) or less). Further, the pressure in the chamber 11 is controlled by an APC valve (not shown).
在腔室11之頂棚部以與承載器12對向之方式配置有噴淋頭30。噴淋頭30具有內部空間31，並且在承載器12之間之處理空間S具有吐出處理氣體之複數氣體孔32。噴淋頭30被接地，與當作下部電極而發揮功能之承載器12一起構成一對平行平板電極。 A shower head 30 is disposed in a ceiling portion of the chamber 11 so as to face the carrier 12. The shower head 30 has an internal space 31, and the processing space S between the carriers 12 has a plurality of gas holes 32 for discharging a process gas. The shower head 30 is grounded and constitutes a pair of parallel plate electrodes together with the carrier 12 functioning as a lower electrode.
噴淋頭30經氣體供給管36而連接於氣體供給源39。在氣體供給管36設置有開關閥37及質量流量控制器38。再者，在處理腔室11之側壁設置有基板搬入搬出口34，該基板搬入搬出口34藉由上述閘閥35成為能夠開關。然後，經該閘閥35搬入搬出屬於處理對象之基板G。 The shower head 30 is connected to the gas supply source 39 via a gas supply pipe 36. The gas supply pipe 36 is provided with an on-off valve 37 and a mass flow controller 38. Further, a substrate loading/unloading port 34 is provided on the side wall of the processing chamber 11, and the substrate loading/unloading port 34 is switchable by the gate valve 35. Then, the substrate G belonging to the processing target is carried in and out via the gate valve 35.
在基板處理裝置10中，從處理氣體供給源39經處理氣體導入管36而供給處理氣體。被供給之處理氣體係經噴淋頭30之內部空間31及氣體孔32而被導入至腔室11之處理空間S。被導入之處理氣體係藉由從高頻電源23經承載器12而被施加至處理空間S之電漿生成用之高頻電力(RF)被激勵而成為電漿。電漿中之離子係朝向基板G被拉入，對基板G施予特定之電漿蝕刻處理。 In the substrate processing apparatus 10, the processing gas is supplied from the processing gas supply source 39 through the processing gas introduction pipe 36. The supplied process gas system is introduced into the processing space S of the chamber 11 through the internal space 31 of the shower head 30 and the gas holes 32. The introduced process gas system is excited by the high frequency electric power (RF) for plasma generation applied to the processing space S from the high frequency power source 23 via the carrier 12 to become a plasma. The ions in the plasma are drawn toward the substrate G, and a specific plasma etching treatment is applied to the substrate G.
基板處理裝置10之各構成構件之動作，係基板處理裝置10具有之控制部(省略圖式)之CPU因應對應於電漿蝕刻處理之程式而予以控制。 The operation of each component of the substrate processing apparatus 10 is controlled by the CPU of the control unit (not shown) of the substrate processing apparatus 10 in response to the program of the plasma etching process.
接著，針對適用於第1圖之基板處理裝置10中之基板載置台12之基板載置面13a形成樹脂突起物層之時的樹脂突起物層轉印構件予以說明。 Next, the resin projection layer transfer member when the resin projection layer is formed on the substrate mounting surface 13a of the substrate stage 12 in the substrate processing apparatus 10 of Fig. 1 will be described.
第2圖為表示與本發明之實施型態有關之樹脂突起物層轉印構件之概略構成的剖面圖。 Fig. 2 is a cross-sectional view showing a schematic configuration of a resin projection layer transfer member according to an embodiment of the present invention.
在第2圖中，該樹脂突起物層轉印構件40主要係由基材片41、被塗佈於該基材片41之單面的第1黏著劑層42、被貼附於該第1黏著劑層42上之多數配列複數樹脂突起物43a之樹脂突起物層43，和被塗佈於該樹脂突起物層43之 各突起物43a之表面的第2黏著劑層44所構成。在第2黏著劑層44之表面因應所需貼附保護片45。依此，可以防止異物附著於樹脂突起物層43之表面而確保清淨狀態。 In the second embodiment, the resin projection layer transfer member 40 is mainly composed of a base material sheet 41 and a first adhesive layer 42 applied to one surface of the base material sheet 41, and is attached to the first sheet. A plurality of resin protrusion layers 43 of the plurality of resin protrusions 43a are disposed on the adhesive layer 42, and are coated on the resin protrusion layer 43. The second adhesive layer 44 on the surface of each of the projections 43a is formed. The protective sheet 45 is attached to the surface of the second adhesive layer 44 as needed. Thereby, foreign matter can be prevented from adhering to the surface of the resin protrusion layer 43, and the clean state can be ensured.
樹脂突起物層轉印構件40係例如以下述般被製造出。 The resin protrusion layer transfer member 40 is manufactured, for example, as follows.
例如，準備由聚對苯二甲酸乙二酯(PET)所構成之厚度為50~100μm之基材片41，在該基材41之單面，藉由塗佈機均等塗佈當作第1黏著劑之丙烯酸系黏著劑而形成第1黏著劑層42。第1黏著劑層42之厚度為例如30~100μm。 For example, a base material sheet 41 made of polyethylene terephthalate (PET) having a thickness of 50 to 100 μm is prepared, and one side of the base material 41 is uniformly coated by a coater as the first one. The first adhesive layer 42 is formed by an acrylic adhesive of an adhesive. The thickness of the first adhesive layer 42 is, for example, 30 to 100 μm.
接著，在第1黏著劑層42貼附例如以壓花狀多述配列樹脂突起物43a之樹脂突起物層43。具體而言，樹脂突起物層43對於例如由鐵氟龍(註冊商標)所構成之片狀物，使用開設多數孔之沖孔金屬狀之模板打孔而形成。在所形成之壓花狀之樹脂突起物層43，推壓塗佈有第1黏著劑層42之基材片41中塗佈有第1黏著劑層42之面而捲取樹脂突起物層43。 Then, the resin protrusion layer 43 in which the resin protrusions 43a are arranged in an embossed shape is attached, for example, to the first adhesive layer 42. Specifically, the resin protrusion layer 43 is formed by, for example, a sheet made of Teflon (registered trademark) punched with a template having a punched metal shape in which a plurality of holes are formed. In the embossed resin protrusion layer 43 formed, the surface of the base material sheet 41 coated with the first adhesive layer 42 is coated with the surface of the first adhesive layer 42 and the resin protrusion layer 43 is wound up. .
如此所形成之樹脂突起物層43之表面，即是和樹脂突起物層43之樹脂突起物43a中與第1黏著劑層42接合之面相反之面上，藉由例如塗佈機塗佈矽氧系黏著劑以當作第2黏著劑而形成第2黏著劑層44，設為樹脂突起物轉印構件40。第2黏著劑層之厚度為例如10~30μm。 The surface of the resin protrusion layer 43 thus formed is a surface opposite to the surface of the resin protrusion 43a of the resin protrusion layer 43 which is bonded to the first adhesive layer 42, and is coated with, for example, a coater. The oxygen-based adhesive is used as the second adhesive to form the second adhesive layer 44, and is used as the resin projection transfer member 40. The thickness of the second adhesive layer is, for example, 10 to 30 μm.
若藉由本實施型態時，在基材片41之單面經第1黏著劑層42貼附由多數樹脂突起物43a所構成之樹脂突起物層43，並在其表面塗佈第2黏著劑層44，故在當作轉印樹脂 突起物層43之轉印材的基板載置面，推壓第2黏著劑層44，之後藉由剝離基材片41，可以在基板載置面一次形成由多數樹脂突起物43a所構成之樹脂突起物層43。 According to the present embodiment, the resin protrusion layer 43 composed of the plurality of resin protrusions 43a is attached to the single surface of the base material sheet 41 via the first adhesive layer 42, and the second adhesive is applied to the surface thereof. Layer 44, so as a transfer resin The substrate mounting surface of the transfer material of the protrusion layer 43 presses the second adhesive layer 44, and then the base material sheet 41 is peeled off, whereby the resin protrusions composed of the plurality of resin protrusions 43a can be formed once on the substrate mounting surface. Object layer 43.
在本實施形態中，就以基材片41而言除PET之外可以使用PP、聚酯等。再者，就以形成第1黏著劑層42之第1黏著劑而言，除丙烯酸系之外，可以使用矽氧系、橡膠系黏著劑等，就以形成第2黏著劑層44之第2黏著劑而言，除矽氧系之外，可以使用例如丙烯酸系黏著劑等。再者，就以保護片45而言，適合使用例如PET、PP等。 In the present embodiment, PP, polyester, or the like can be used as the base material sheet 41 in addition to PET. In addition, in the first adhesive which forms the first adhesive layer 42, in addition to the acrylic type, an oxygen-based or rubber-based adhesive can be used to form the second adhesive layer 44. As the adhesive, in addition to the oxime oxygen system, for example, an acrylic adhesive or the like can be used. Further, as the protective sheet 45, for example, PET, PP, or the like is suitably used.
接著，針對在與本發明之實施型態有關之基板載置面形成樹脂突起物層之方法予以說明。 Next, a method of forming a resin protrusion layer on a substrate mounting surface according to an embodiment of the present invention will be described.
第3圖為與本發明之實施型態有關之在基板載置面形成樹脂突起物層之方法的工程圖。 Fig. 3 is a view showing a method of forming a resin projection layer on a substrate mounting surface in accordance with an embodiment of the present invention.
於基板載置台之基板載置面形成樹脂突起層之時，在基板載置面之周圍，設置僅以與形成在基板載置面之樹脂突起物層之厚度相同高度突出之階差部為佳。依此，可以迴避形成在基板載置面之樹脂突起物層之剝離、損傷等，並且可以密閉被供給至載置面上之熱傳達氣體，提升熱傳導率。 When the resin projection layer is formed on the substrate mounting surface of the substrate mounting table, it is preferable to provide a step portion protruding only at the same height as the thickness of the resin projection layer formed on the substrate mounting surface around the substrate mounting surface. . According to this, peeling, damage, and the like of the resin projection layer formed on the substrate mounting surface can be avoided, and the heat transfer gas supplied to the mounting surface can be sealed to improve the thermal conductivity.
以下，使用第2圖之樹脂突起物轉印構件40，針對在基板載置面之周圍具有階差部之基板載置台之基板載置面上形成樹脂突起物層之方法予以說明。 In the following, a method of forming a resin protrusion layer on a substrate mounting surface of a substrate mounting table having a step portion around the substrate mounting surface will be described with reference to the resin projection transfer member 40 of FIG. 2 .
首先，準備在基板載置面之周圍具有階差部之基板載置台(第3圖(A))。該基板載置台12主要係以表面被氧 皮鋁處理之鋁而形成之基材13，和被設置在該基材13之凸狀部之上部平面之靜電吸盤54所構成。靜電吸盤54係由絕緣性之氧化鋁(Al2O3)層52，和內藏在該氧化鋁層52之靜電電極板16所構成，在氧化鋁層52之上部平面周圍，具有與被形成在基板載置面之樹脂突起物層相同高度之階差部56。 First, a substrate mounting table having a step portion around the substrate mounting surface is prepared (Fig. 3(A)). The substrate stage 12 is mainly composed of a substrate 13 formed of aluminum treated with oxyaluminum on its surface, and an electrostatic chuck 54 provided on a plane above the convex portion of the substrate 13. The electrostatic chuck 54 is composed of an insulating alumina (Al 2 O 3 ) layer 52 and an electrostatic electrode plate 16 embedded in the aluminum oxide layer 52, and is formed around the upper plane of the aluminum oxide layer 52. The step portion 56 of the same height on the resin projection layer on the substrate mounting surface.
接著，在如此之基板載置台12中之靜電吸盤54之基板載置面13a，抵接被塗佈於第2圖之樹脂突起物層轉印構件40之樹脂突起物層43之第2黏著劑層44。具體而言，剝開樹脂突起物層轉印構件40之保護片45(保護片剝離步驟)，依此使壓花狀多數配列樹脂突起物43a之樹脂突起物層43露出，在該狀態下使樹脂突起物層43上之第2黏著劑層44抵接於基板載置面13a，而貼附樹脂突起物層43(第3圖(B))。 Then, the substrate mounting surface 13a of the electrostatic chuck 54 in the substrate mounting table 12 is brought into contact with the second adhesive applied to the resin projection layer 43 of the resin projection layer transfer member 40 of Fig. 2 . Layer 44. Specifically, the protective sheet 45 (protective sheet peeling step) of the resin protrusion layer transfer member 40 is peeled off, whereby the resin protrusion layer 43 of the embossed majority of the resin protrusions 43a is exposed, and in this state, The second adhesive layer 44 on the resin protrusion layer 43 is in contact with the substrate mounting surface 13a, and the resin protrusion layer 43 is attached (Fig. 3(B)).
接著，將在基板載置面13a貼附有樹脂突起物層43之狀態的樹脂突起物層轉印構件40之基材片41之一方面朝向基板載置面13a均等推壓而使樹脂突起物層43確實地貼附於基板載置面13a。如此一來，貼附樹脂突起物層43之後，慢慢地剝離基材片41。依此，在基板載置面13a轉印樹脂突起物層43，取得所形成之基板載置台(第3圖(C))。 Then, one of the base material sheets 41 of the resin projection layer transfer member 40 in a state in which the resin projection layer 43 is adhered to the substrate mounting surface 13a is uniformly pressed toward the substrate mounting surface 13a to form a resin projection. The layer 43 is surely attached to the substrate mounting surface 13a. As a result, after the resin protrusion layer 43 is attached, the substrate sheet 41 is gradually peeled off. As a result, the resin protrusion layer 43 is transferred onto the substrate mounting surface 13a, and the formed substrate stage (FIG. 3(C)) is obtained.
接著，因應所需，以覆蓋形成有壓花狀之樹脂突起物層43之基板載置面之樹脂突起物層43之方式，形成塗佈層。就以塗佈劑而言，適合使用例如矽樹脂。依此，可以 提高被形成在基板載置面13a之壓花狀之樹脂突起層43之密接力，並且確保強度。 Then, a coating layer is formed so as to cover the resin protrusion layer 43 on the substrate mounting surface on which the embossed resin protrusion layer 43 is formed. As the coating agent, for example, an anthracene resin is suitably used. According to this, you can The adhesion of the embossed resin protruding layer 43 formed on the substrate mounting surface 13a is increased, and the strength is secured.
第4圖係表示在基板載置面13a形成有樹脂突起物層43之基板載置台之基板載置面13a之俯視圖。 Fig. 4 is a plan view showing the substrate mounting surface 13a of the substrate mounting table on which the resin projection layer 43 is formed on the substrate mounting surface 13a.
在第4圖中，在基板載置台12之基板載置面13a形成有以壓花狀多數配列樹脂突起物43a之樹脂突起物層43。 In the fourth embodiment, the resin projection layer 43 in which the resin projections 43a are arranged in a plurality of embossing is formed on the substrate mounting surface 13a of the substrate mounting table 12.
若藉由本實施型態時，因使用黏著劑轉印至基板載置面13a而貼附樹脂突起物層43，故不用加熱基板載置台12，可以在基板載置面13a形成樹脂突起物層43。因此，可以充分適用於耐熱溫度低例如100℃以下之基板載置台。 According to the present embodiment, since the resin projection layer 43 is attached by transferring the adhesive to the substrate mounting surface 13a, the resin projection layer 43 can be formed on the substrate mounting surface 13a without heating the substrate mounting table 12. . Therefore, it can be suitably applied to a substrate mounting table having a low heat resistant temperature of, for example, 100 ° C or less.
再者，因可以以簡單方法，不需要特殊加工裝置或治具，故即使在現場亦可以容易進行樹脂突起物層43之設置及重貼等。 Further, since the special processing apparatus or the jig can be omitted by a simple method, the setting and reattachment of the resin projection layer 43 can be easily performed even at the site.
在本實施型態中，樹脂突起物層43中之樹脂突起物43a之大小例如剖面為0.5~2.0mm ，高度為例如30~80μm之圓柱狀。樹脂突起物43a之間距為例如5mm。因此，在基板載置面55形成數萬個之樹脂突起物43a。樹脂突起物43a之間距以2~10mm為佳，更佳為4~7mm。當間距過小時，則難以形成突起物層，當過大時，則有作為突起物強度不足之虞。 In the present embodiment, the size of the resin protrusion 43a in the resin protrusion layer 43 is, for example, 0.5 to 2.0 mm in cross section. The height is, for example, a cylindrical shape of 30 to 80 μm. The distance between the resin projections 43a is, for example, 5 mm. Therefore, tens of thousands of resin projections 43a are formed on the substrate mounting surface 55. The distance between the resin projections 43a is preferably 2 to 10 mm, more preferably 4 to 7 mm. When the pitch is too small, it is difficult to form a protrusion layer, and when it is too large, there is a defect that the protrusion strength is insufficient.
在本實施型態中，就以樹脂突起物43a之構成材料而言，可以使用例如聚四氟乙烯(鐵氟龍(註冊商標)、環氧樹脂、矽樹脂、聚醯亞胺樹脂、聚醚醯亞胺樹脂及以氟 化橡膠為首之耐熱橡膠等，尤其適合使用鐵氟龍(註冊商標)。 In the present embodiment, as the constituent material of the resin protrusions 43a, for example, polytetrafluoroethylene (Teflon (registered trademark), epoxy resin, enamel resin, polyimide resin, polyether can be used. Yttrium imide resin and fluorine It is especially suitable for the use of Teflon (registered trademark).
就以樹脂突起物43a之構成材料而言，藉由使用鐵氟龍(註冊商標)，取得以下之效果。 In the constituent material of the resin projections 43a, the following effects are obtained by using Teflon (registered trademark).
鐵氟龍(註冊商標)具備耐腐蝕性，對適用於電漿處理之各種處理氣體具有耐性。再者，因鐵氟龍(註冊商標)較氧化鋁熱傳導率小，故作為突起物之材料使用鐵氟龍(註冊商標)之時和使用氧化鋁之時，經被供給至基板載置面13a和被載置於該基板載置面13a之基板G之背面之間隙的導熱用之氦氣之熱的傳達方式，和經突起物之熱的傳達方式之差，突起物使用鐵氟龍(註冊商標)之時較小，可以抑制在基板G之背面產生熱分布所引起之蝕刻斑。再者，由於鐵氟龍(註冊商標)之介電常數小，在與氦氣所形成之電場強度分布中，無產生極度峰值等之特異點，故可以抑制因基板G之電場分布所引起之蝕刻斑的產生。再者，由於鐵氟龍(註冊商標)滑動性良好，摩耗少，故可以容易進行例如藉由擦取之洗淨等。 Teflon (registered trademark) is corrosion resistant and resistant to various processing gases suitable for plasma processing. In addition, since Teflon (registered trademark) has a smaller thermal conductivity than alumina, it is supplied to the substrate mounting surface 13a when Teflon (registered trademark) is used as the material of the projections and when alumina is used. The heat transfer method of the heat of the helium gas and the heat transfer method of the heat transfer by the gap between the back surface of the substrate G placed on the substrate mounting surface 13a and the heat transfer method of the protrusions are used. The trademark) is small in time, and it is possible to suppress the occurrence of etching spots caused by heat distribution on the back surface of the substrate G. In addition, since the dielectric constant of Teflon (registered trademark) is small, there is no singular point such as an extreme peak in the electric field intensity distribution formed by the helium gas, so that the electric field distribution due to the substrate G can be suppressed. The generation of etched spots. Further, since Teflon (registered trademark) has good slidability and low friction, it can be easily washed, for example, by wiping.
在本實施型態中，適用於樹脂突起物層轉印構件40之第2黏著劑層之黏著力，以大於第1黏著劑層之黏著力為佳，更具體而言，例如以大於構成藉由氧化鋁熔射皮膜52所形成之基板載置面13a之氧化鋁，和被塗佈於樹脂突起物層43之表面之第2黏著劑層的黏著力A，大於被塗佈於基材片41之第1黏著劑層和樹脂突起物層43之黏著劑B之方式，選擇各黏著劑層為佳。依此，將樹脂突起物層轉印構 件40中之樹脂突起物層43貼附於基板載置面13a之後，於剝離基材片41之時，樹脂突起物層43貼附於基材片41而不會從基板載置面13a剝離，可以確實將樹脂突起物層轉印構件40之樹脂突起物層43確實地轉印至基板載置面13a。另外，於剝離保護片45之時，為了防止樹脂突起物層43從基材片41剝離，必須選擇保護片45和第2黏著劑層之黏著力C較上述黏著力B弱之保護片之材料，或對保護片施予非黏著處理。 In the present embodiment, the adhesion force applied to the second adhesive layer of the resin projection layer transfer member 40 is preferably greater than the adhesion of the first adhesive layer, and more specifically, for example, by a larger composition. The adhesion of the alumina of the substrate mounting surface 13a formed of the alumina spray film 52 to the second adhesive layer applied to the surface of the resin protrusion layer 43 is larger than that applied to the substrate sheet. In the manner of the first adhesive layer of 41 and the adhesive B of the resin projection layer 43, it is preferable to select each adhesive layer. According to this, the resin protrusion layer is transferred After the resin protrusion layer 43 in the member 40 is attached to the substrate mounting surface 13a, the resin protrusion layer 43 is attached to the substrate sheet 41 without being peeled off from the substrate mounting surface 13a when the substrate sheet 41 is peeled off. The resin protrusion layer 43 of the resin protrusion layer transfer member 40 can be surely transferred to the substrate mounting surface 13a. Further, when the protective sheet 45 is peeled off, in order to prevent the resin protrusion layer 43 from being peeled off from the base sheet 41, it is necessary to select a material of the protective sheet in which the adhesive force C of the protective sheet 45 and the second adhesive layer is weaker than the above-described adhesive force B. Or apply a non-adhesive treatment to the protective sheet.
若藉由與本實施型態有關之基板載置台，即是在載置基板之基板載置面形成配列複數之樹脂突起物43a之樹脂突起物層43之基板載置台時，則不會有使載置於基板載置面13a之基板G之背面刮傷之情形。再者，因以點接觸支撐基板，故可以降低反應副生成物等之附著物附著於基板的背面之機會。 When the substrate mounting table according to the present embodiment is used, that is, the substrate mounting table on which the resin projection layer 43 of the plurality of resin projections 43a is arranged is formed on the substrate mounting surface on which the substrate is placed, the substrate mounting table 43 does not have a The case where the back surface of the substrate G placed on the substrate mounting surface 13a is scratched. Further, since the substrate is supported by the point contact, it is possible to reduce the chance that the adhering substances such as the reaction by-products adhere to the back surface of the substrate.
在上述各實施型態中，基板不僅液晶顯示器(LCD)用之玻璃基板，即使為使用於以電激發光(Electro Luminescence：EL)顯示器、電漿顯示面板(PDP)等為首之FPD(Flat Panel Display)的各種基板亦可。 In each of the above embodiments, the substrate is not only a glass substrate for a liquid crystal display (LCD), but also an FPD (Flat Panel) such as an electroluminescence (EL) display, a plasma display panel (PDP), or the like. Various substrates of Display) are also available.
10‧‧‧基板處理裝置 10‧‧‧Substrate processing unit
12‧‧‧基板載置台(承載器) 12‧‧‧Substrate mounting table (carrier)
13‧‧‧基材 13‧‧‧Substrate
13a‧‧‧基板載置面 13a‧‧‧Substrate mounting surface
40‧‧‧樹脂突起物層轉印構件 40‧‧‧Resin protrusion layer transfer member
41‧‧‧基材片 41‧‧‧Substrate sheet
42‧‧‧第1黏著劑層 42‧‧‧1st adhesive layer
43‧‧‧樹脂突起物層 43‧‧‧Resin raised layer
43a‧‧‧樹脂突起物 43a‧‧‧Resin protrusions
44‧‧‧第2黏著劑層 44‧‧‧2nd adhesive layer
第1圖為表示適用與本發明之實施型態有關之基板載置台之基板處理裝置之概略構成的剖面圖。 Fig. 1 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus to which a substrate mounting table according to an embodiment of the present invention is applied.
第2圖為表示與本發明之實施型態有關之樹脂突起物層轉印構件之概略構成的剖面圖。 Fig. 2 is a cross-sectional view showing a schematic configuration of a resin projection layer transfer member according to an embodiment of the present invention.
第3圖為與本發明之實施型態有關之在基板載置面形成樹脂突起物層之方法的工程圖。 Fig. 3 is a view showing a method of forming a resin projection layer on a substrate mounting surface in accordance with an embodiment of the present invention.
第4圖為表示與本發明有關之基板載置台，在基板載置面形成樹脂突起物層之基板載置台之基板載置面的俯視圖。 Fig. 4 is a plan view showing a substrate mounting surface of a substrate mounting table on which a resin projection layer is formed on a substrate mounting surface of the substrate mounting table according to the present invention.
12‧‧‧基板載置台(承載器) 12‧‧‧Substrate mounting table (carrier)
13‧‧‧基材 13‧‧‧Substrate
13a‧‧‧基板載置面 13a‧‧‧Substrate mounting surface
40‧‧‧樹脂突起物層轉印構件 40‧‧‧Resin protrusion layer transfer member
43‧‧‧樹脂突起物層 43‧‧‧Resin raised layer
44‧‧‧第2黏著劑層 44‧‧‧2nd adhesive layer
54‧‧‧靜電吸盤 54‧‧‧Electrostatic suction cup
56‧‧‧階差部 56‧‧ ‧ step department
16‧‧‧靜電電極板 16‧‧‧Electrostatic electrode plate
52‧‧‧氧化鋁熔射皮膜52‧‧‧Alumina spray film
Claims (11)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010167121A JP5570900B2 (en) | 2010-07-26 | 2010-07-26 | Method for forming resin protrusion layer on substrate mounting surface and resin protrusion layer transfer member |
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| TW201220424A TW201220424A (en) | 2012-05-16 |
| TWI517294B true TWI517294B (en) | 2016-01-11 |
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| TW100126182A TWI517294B (en) | 2010-07-26 | 2011-07-25 | A method of forming a resin bump on a substrate mounting surface, and a resin protruding layer transfer member |
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| JP (1) | JP5570900B2 (en) |
| KR (1) | KR101302886B1 (en) |
| CN (1) | CN102376617B (en) |
| TW (1) | TWI517294B (en) |
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| CN103605267B (en) * | 2013-10-23 | 2017-04-12 | 上海华力微电子有限公司 | Isolation structure for remote radio-frequency plasma source |
| CN103811332B (en) * | 2014-02-14 | 2016-05-25 | 北京京东方显示技术有限公司 | A kind of lower electrode base station and dry etching equipment of dry etching equipment |
| JP7343314B2 (en) * | 2018-07-12 | 2023-09-12 | 住友化学株式会社 | Stage, physical property measuring device and measuring method |
| CN111383986A (en) * | 2018-12-27 | 2020-07-07 | 东京毅力科创株式会社 | Substrate mounting table and substrate processing apparatus |
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| JP2519528B2 (en) * | 1989-02-09 | 1996-07-31 | ハニー化成株式会社 | Plasticized soft synthetic resin product having transparent conductive layer and transfer member for forming transparent conductive layer |
| JP2823883B2 (en) * | 1989-04-10 | 1998-11-11 | リンテック株式会社 | Adhesive sheet for attaching wafer |
| JP4387563B2 (en) * | 2000-06-05 | 2009-12-16 | 住友大阪セメント株式会社 | Susceptor and method of manufacturing susceptor |
| JP3626933B2 (en) * | 2001-02-08 | 2005-03-09 | 東京エレクトロン株式会社 | Manufacturing method of substrate mounting table |
| JP2006206787A (en) * | 2005-01-31 | 2006-08-10 | Sumitomo Bakelite Co Ltd | Die attach film having dicing sheet function and manufacturing process of semiconductor device and semiconductor device using it |
| JP2008028297A (en) * | 2006-07-25 | 2008-02-07 | Zaiken:Kk | Electrostatic chuck |
| JP5059450B2 (en) * | 2007-03-06 | 2012-10-24 | 東京エレクトロン株式会社 | Substrate mounting table and substrate processing apparatus |
| JP2008251737A (en) * | 2007-03-29 | 2008-10-16 | Tomoegawa Paper Co Ltd | Electrode member for electrostatic chuck device, electrostatic chuck device using same, and electrostatic adsorption releasing method |
| JP2010088153A (en) * | 2008-09-29 | 2010-04-15 | Tdk-Lambda Corp | Electronic equipment |
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| JP5570900B2 (en) | 2014-08-13 |
| TW201220424A (en) | 2012-05-16 |
| CN102376617A (en) | 2012-03-14 |
| KR20120010569A (en) | 2012-02-03 |
| CN102376617B (en) | 2016-03-23 |
| JP2012028622A (en) | 2012-02-09 |
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