JP2012028622A - Substrate mounting table, resin protrusion layer formation method on substrate mounting surface, and resin protrusion layer transfer member - Google Patents

Substrate mounting table, resin protrusion layer formation method on substrate mounting surface, and resin protrusion layer transfer member Download PDF

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JP2012028622A
JP2012028622A JP2010167121A JP2010167121A JP2012028622A JP 2012028622 A JP2012028622 A JP 2012028622A JP 2010167121 A JP2010167121 A JP 2010167121A JP 2010167121 A JP2010167121 A JP 2010167121A JP 2012028622 A JP2012028622 A JP 2012028622A
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resin
substrate
resin protrusion
layer
substrate mounting
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JP5570900B2 (en
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Masahito Minami
雅人 南
Yoshihiko Sasaki
芳彦 佐々木
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to TW100126182A priority patent/TWI517294B/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a resin protrusion layer formation method on a substrate mounting surface, capable of forming a resin protrusion layer on the substrate mounting surface without heating a substrate mounting table.SOLUTION: The resin protrusion layer formation method includes: an adhesion step for adhering a resin protrusion layer 43 on a substrate mounting surface 13a, by depressing to the substrate mounting surface 13a a second adhesive agent layer 44 coated on the resin protrusion layer 43 of a resin protrusion layer transfer member 40, including a base material sheet, the resin protrusion layer 43 adhered to one surface of the base material sheet via a first adhesive agent layer, and the second adhesive agent layer 44 coated on the resin protrusion layer 43; and a base material sheet exfoliation step for exfoliating the base material sheet from the adhered resin protrusion layer 43.

Description

本発明は、基板処理装置の処理室内で基板を載置する基板載置台、該基板載置台の基板載置面に樹脂突起物層を形成する方法及びこの方法に適用する樹脂突起物層転写部材に関する。   The present invention relates to a substrate mounting table for mounting a substrate in a processing chamber of a substrate processing apparatus, a method for forming a resin protrusion layer on a substrate mounting surface of the substrate mounting table, and a resin protrusion layer transfer member applied to this method About.

液晶表示装置(LCD)をはじめとするFPD(Flat Panel Display)の製造工程において、ガラス基板をはじめとする各種基板に対しプラズマ処理を施す基板処理装置が知られている。   2. Description of the Related Art A substrate processing apparatus that performs plasma processing on various substrates including a glass substrate in a manufacturing process of an FPD (Flat Panel Display) including a liquid crystal display device (LCD) is known.

このような基板処理装置においては、処理室(以下、「チャンバ」という。)内でガラス基板(以下、単に「基板」という。)を支持する基板載置台と、該基板載置台と処理空間を隔てて対向するように配置された上部電極とを有し、下部電極として機能する基板載置台にプラズマ生成用の高周波電力(RF)を印加すると共に、処理空間に処理ガスを導入してプラズマを生成させ、生成したプラズマを用いて基板載置台の基板載置面に載置された基板に対して所定のプラズマ処理が施される。   In such a substrate processing apparatus, a substrate mounting table that supports a glass substrate (hereinafter simply referred to as “substrate”) in a processing chamber (hereinafter referred to as “chamber”), the substrate mounting table and a processing space are provided. A high-frequency power (RF) for plasma generation is applied to a substrate mounting table that functions as a lower electrode, and a processing gas is introduced into the processing space to generate plasma. A predetermined plasma process is performed on the substrate placed on the substrate placement surface of the substrate placement table using the generated plasma.

基板載置台の基板載置面には、通常、絶縁層としてアルミナ(AL)溶射膜が形成されている。アルミナ溶射膜を構成するアルミナの硬度は、HV1000程度であり、一般的なガラス基板の硬度であるHV640よりも硬いために、基板を基板載置台に載置し、静電チャックによって静電吸着した際、アルミナ溶射膜によって基板の裏面に傷がつくという問題がある。 An alumina (AL 2 O 3 ) sprayed film is usually formed as an insulating layer on the substrate mounting surface of the substrate mounting table. The hardness of alumina constituting the alumina sprayed film is about HV1000, which is harder than HV640, which is a general glass substrate hardness, and thus the substrate was placed on the substrate mounting table and electrostatically adsorbed by the electrostatic chuck. However, there is a problem that the back surface of the substrate is damaged by the alumina sprayed film.

一方、平面状の基板載置面に基板を載置させた場合、基板の裏面に異物が付着し易いという問題があり、これを回避するために、基板載置面に突起物層を形成して基板を点接触で支持しようとする試みがあり、基板載置面に多数の突起を有する突起層を形成する技術が開発されている(例えば、特許文献1参照)。   On the other hand, when a substrate is placed on a flat substrate placement surface, there is a problem that foreign matter tends to adhere to the back surface of the substrate. To avoid this, a protrusion layer is formed on the substrate placement surface. Attempts have been made to support the substrate by point contact, and a technique for forming a projection layer having a large number of projections on the substrate mounting surface has been developed (see, for example, Patent Document 1).

特開2008−251574号公報JP 2008-251574 A

しかしながら、ゴミ等の異物の付着を防止し、且つ基板の裏面に傷をつけないためには、基板の材質であるガラスよりも硬度が小さい材料からなる突起を基板載置面に形成する必要がある。また、一度に多数の突起物を基板載置面に形成するのは非常に困難である。   However, in order to prevent the adhesion of foreign substances such as dust and to prevent the back surface of the substrate from being scratched, it is necessary to form protrusions made of a material having a lower hardness than glass, which is the material of the substrate, on the substrate mounting surface. is there. In addition, it is very difficult to form a large number of protrusions on the substrate mounting surface at a time.

ところで、ガラスよりも硬度が小さい材料であって基板処理装置の処理室内で適用できるものとして、例えばポリテトラフルオロエチレン(商品面:テフロン(登録商標))等の樹脂が挙げられる。テフロン(登録商標)膜又はテフロン(登録商標)からなる突起物を構成部材表面に転写させる方法としては、一般に、テフロン(登録商標)からなる粉を静電粉体塗装により被転写面に吸着させて400℃程度に加熱する焼き付け方法が採用されているが、基板載置台の耐熱温度は、例えば100℃以下であり、このような焼き付け方法を採用することはできない。   By the way, as a material having a hardness lower than that of glass and applicable in a processing chamber of a substrate processing apparatus, for example, a resin such as polytetrafluoroethylene (commercial surface: Teflon (registered trademark)) can be given. As a method for transferring a Teflon (registered trademark) film or a projection made of Teflon (registered trademark) to the surface of a component, generally, a powder made of Teflon (registered trademark) is adsorbed on the transfer surface by electrostatic powder coating. However, the heat-resistant temperature of the substrate mounting table is, for example, 100 ° C. or less, and such a baking method cannot be employed.

本発明の第1の課題は、基板載置面に載置された基板の裏面に基板載置面の材質に起因する傷を付けることがない基板載置台を提供することにある。また、本発明の第2の課題は、基板載置台の基板載置面に一度に多数の樹脂突起物からなる樹脂突起物層を形成することができる樹脂突起物層転写部材を提供することにある。また、本発明の第3の課題は、基板載置台を加熱することなく基板載置面に樹脂突起物層を形成することができる基板載置面に樹脂突起物層を形成する方法を提供することにある。   A first object of the present invention is to provide a substrate mounting table that does not damage the back surface of the substrate mounted on the substrate mounting surface due to the material of the substrate mounting surface. A second problem of the present invention is to provide a resin protrusion layer transfer member capable of forming a resin protrusion layer composed of a large number of resin protrusions at once on the substrate mounting surface of the substrate mounting table. is there. The third object of the present invention is to provide a method for forming a resin protrusion layer on a substrate mounting surface, which can form a resin protrusion layer on the substrate mounting surface without heating the substrate mounting table. There is.

上記第1の課題を解決するために、請求項1記載の基板載置台は、矩形の基板にプラズマ処理を施す基板処理装置の処理室内で前記基板を載置する基板載置台であって、前記基板が載置される基板載置面に、粘着剤層を介して前記基板載置面上に貼着された複数の樹脂突起物が配列された樹脂突起物層が形成されていることを特徴とする。   In order to solve the first problem, the substrate mounting table according to claim 1 is a substrate mounting table for mounting the substrate in a processing chamber of a substrate processing apparatus for performing plasma processing on a rectangular substrate, A resin protrusion layer in which a plurality of resin protrusions adhered to the substrate mounting surface via an adhesive layer is arranged is formed on the substrate mounting surface on which the substrate is mounted. And

請求項2記載の基板載置台は、請求項1記載の基板載置台において、前記樹脂突起物層は、断面が0.5〜2.0mmφで、高さ30〜80μmの円柱状の樹脂突起物を、2〜10mmピッチで多数配列させたものであることを特徴とする。   The substrate mounting table according to claim 2 is the substrate mounting table according to claim 1, wherein the resin protrusion layer has a columnar resin protrusion having a cross section of 0.5 to 2.0 mmφ and a height of 30 to 80 μm. It is characterized by being arranged in a large number at a pitch of 2 to 10 mm.

請求項3記載の基板載置台は、請求項1又は2記載の基板載置台において、前記樹脂突起物は、ポリテトラフルオロエチレン、エポキシ樹脂、シリコン樹脂、ポリイミド樹脂、ポリエーテルイミド樹脂及び耐熱性ゴムのうちのいずれかで構成されていることを特徴とする。   The substrate mounting table according to claim 3 is the substrate mounting table according to claim 1 or 2, wherein the resin protrusions are polytetrafluoroethylene, epoxy resin, silicon resin, polyimide resin, polyetherimide resin, and heat-resistant rubber. It is characterized by being comprised by either of these.

上記第2の課題を解決するために、請求項4記載の樹脂突起物層転写部材は、矩形の基板にプラズマ処理を施す基板処理装置の処理室内で前記基板を載置する基板載置台の基板載置面に樹脂突起物層を転写する樹脂突起物層転写部材であって、基材シートと、該基材シートの片面に塗布された第1の粘着剤層と、該第1の粘着剤層に貼着された樹脂突起物層と、該樹脂突起物層に塗布された第2の粘着剤層と、を有することを特徴とする。   In order to solve the second problem, the resin protrusion layer transfer member according to claim 4 is a substrate mounting table on which the substrate is mounted in a processing chamber of a substrate processing apparatus that performs plasma processing on a rectangular substrate. A resin protrusion layer transfer member for transferring a resin protrusion layer onto a mounting surface, the substrate sheet, a first adhesive layer applied to one side of the substrate sheet, and the first adhesive It has the resin protrusion layer stuck to the layer, and the 2nd adhesive layer apply | coated to this resin protrusion layer, It is characterized by the above-mentioned.

請求項5記載の樹脂突起物層転写部材は、請求項4記載の樹脂突起物層転写部材において、前記樹脂突起物層は、断面が0.5〜2.0mmφで、高さ30〜80μmの円筒状の樹脂突起物を、2〜10mmピッチで多数配列させたものであることを特徴とする。   The resin protrusion layer transfer member according to claim 5 is the resin protrusion layer transfer member according to claim 4, wherein the resin protrusion layer has a cross section of 0.5 to 2.0 mmφ and a height of 30 to 80 μm. A large number of cylindrical resin protrusions are arranged at a pitch of 2 to 10 mm.

請求項6記載の樹脂突起物層転写部材は、請求項4又は5記載の樹脂突起物層転写部材において、前記樹脂突起物は、ポリテトラフルオロエチレン、エポキシ樹脂、シリコン樹脂、ポリイミド樹脂、ポリエーテルイミド樹脂及び耐熱性ゴムのうちのいずれかで構成されていることを特徴とする。   The resin protrusion layer transfer member according to claim 6 is the resin protrusion layer transfer member according to claim 4 or 5, wherein the resin protrusion is polytetrafluoroethylene, epoxy resin, silicon resin, polyimide resin, polyether. It is comprised by either imide resin and heat resistant rubber, It is characterized by the above-mentioned.

請求項7記載の樹脂突起物層転写部材は、請求項4乃至6のいずれか1項に記載の樹脂突起物層転写部材において、前記第2の粘着剤層と前記基板載置面との粘着力は、前記第1の粘着剤層と前記樹脂突起物層との粘着力よりも大きいことを特徴とする。   The resin protrusion layer transfer member according to claim 7 is the resin protrusion layer transfer member according to any one of claims 4 to 6, wherein the adhesive between the second pressure-sensitive adhesive layer and the substrate mounting surface is used. The force is greater than the adhesive force between the first pressure-sensitive adhesive layer and the resin protrusion layer.

請求項8記載の樹脂突起物層転写部材は、請求項4乃至7のいずれか1項に記載の樹脂突起物層転写部材であって、前記第2の粘着剤層上に保護シートが貼着されていることを特徴とする。   The resin protrusion layer transfer member according to claim 8 is the resin protrusion layer transfer member according to any one of claims 4 to 7, wherein a protective sheet is attached on the second pressure-sensitive adhesive layer. It is characterized by being.

上記第3の課題を解決するために、請求項9記載の基板載置面に樹脂突起物層を形成する方法は、矩形の基板にプラズマ処理を施す基板処理装置の処理室内で前記基板を載置する基板載置台の基板載置面に樹脂突起物層を形成する方法であって、基材シートと、該基材シートの片面に第1の粘着剤層を介して貼着された樹脂突起物層と、該樹脂突起物層に塗布された第2の粘着剤層とを有する樹脂突起物層転写部材の前記樹脂突起物層に塗布された第2の粘着剤層を前記基板載置面に押しつけて前記樹脂突起物層を前記基板載置面に貼着する貼着ステップと、前記貼着させた樹脂突起物層から前記基材シートを剥がす基材シート剥離ステップと、を有することを特徴とする。   In order to solve the third problem, a method for forming a resin protrusion layer on a substrate mounting surface according to claim 9 is the method of mounting the substrate in a processing chamber of a substrate processing apparatus for performing plasma processing on a rectangular substrate. A method of forming a resin protrusion layer on a substrate mounting surface of a substrate mounting table to be placed, the base sheet and a resin protrusion bonded to one side of the base sheet via a first adhesive layer A second adhesive layer applied to the resin protrusion layer of the resin protrusion layer transfer member having an object layer and a second adhesive layer applied to the resin protrusion layer. A bonding step of pressing the resin protrusion layer on the substrate mounting surface and a base sheet peeling step of peeling the base sheet from the bonded resin protrusion layer. Features.

請求項10記載の基板載置面に樹脂突起物層を形成する方法は、請求項9記載の基板載置面に樹脂突起物層を形成する方法において、前記樹脂突起物層は、断面が0.5〜2.0mmφで、高さ30〜80μmの円柱状の樹脂突起物を、2〜10mmピッチで多数配列させたものであることを特徴とする。   The method for forming a resin protrusion layer on the substrate mounting surface according to claim 10 is the method for forming a resin protrusion layer on the substrate mounting surface according to claim 9, wherein the resin protrusion layer has a cross section of 0. A large number of cylindrical resin projections having a diameter of 5 to 2.0 mmφ and a height of 30 to 80 μm are arranged at a pitch of 2 to 10 mm.

請求項11記載の基板載置面に樹脂突起物層を形成する方法は、請求項9又は10記載の基板載置面に樹脂突起物層を形成する方法において、前記樹脂突起物は、ポリテトラフルオロエチレン、エポキシ樹脂、シリコン樹脂、ポリイミド樹脂、ポリエーテルイミド樹脂及び耐熱性ゴムのうちのいずれかで構成されていることを特徴とする。   The method for forming a resin protrusion layer on a substrate mounting surface according to claim 11 is the method for forming a resin protrusion layer on a substrate mounting surface according to claim 9 or 10, wherein the resin protrusion is made of polytetra It is composed of any one of fluoroethylene, epoxy resin, silicon resin, polyimide resin, polyetherimide resin, and heat resistant rubber.

請求項12記載の基板載置面に樹脂突起物層を形成する方法は、請求項9乃至11のいずれか1項に記載の基板載置面に樹脂突起物層を形成する方法において、前記基板載置面には、アルミナ溶射膜が形成されており、前記第2の粘着剤層と前記アルミナ溶射膜との粘着力は、前記第1の粘着剤層と前記樹脂突起物層との粘着力よりも大きいことを特徴とする。   The method for forming a resin protrusion layer on a substrate mounting surface according to claim 12, wherein the resin protrusion layer is formed on the substrate mounting surface according to any one of claims 9 to 11. An alumina sprayed film is formed on the mounting surface, and the adhesive force between the second adhesive layer and the alumina sprayed film is the adhesive force between the first adhesive layer and the resin protrusion layer. It is characterized by being larger than.

請求項13記載の基板載置面に樹脂突起物層を形成する方法は、請求項9乃至12のいずれか1項に記載の基板載置面に樹脂突起物層を形成する方法において前記樹脂突起物層転写部材の前記第2粘着剤層には保護シートが貼着されており、前記貼着ステップの前段に、前記保護シートを剥離する保護シート剥離ステップを有することを特徴とする。   The method for forming a resin protrusion layer on a substrate mounting surface according to claim 13 is the method for forming a resin protrusion layer on a substrate mounting surface according to any one of claims 9 to 12. A protective sheet is attached to the second pressure-sensitive adhesive layer of the material layer transfer member, and a protective sheet peeling step for peeling the protective sheet is provided before the sticking step.

請求項14記載の基板載置面に樹脂突起物層を形成する方法は、請求項9乃至13のいずれか1項に記載の基板載置面に樹脂突起物層を形成する方法において、前記基材シート剥離ステップの後段に、前記基板載置面に貼着された前記樹脂突起物層を覆うようにコーティング剤を塗布する塗布ステップを有することを特徴とする。   The method for forming a resin protrusion layer on a substrate placement surface according to claim 14 is the method for forming a resin protrusion layer on a substrate placement surface according to any one of claims 9 to 13. It has the application | coating step which apply | coats a coating agent so that the said resin protrusion layer stuck on the said board | substrate mounting surface may be covered in the back | latter stage of a material sheet peeling step.

本発明の基板載置台によれば、基板載置面に載置された基板の裏面に基板載置面の材質に起因する傷を付けることがなくなる。また、本発明の樹脂突起物層転写部材によれば、基板載置台の基板載置面に一度に多数の樹脂突起物からなる樹脂突起物層を形成することができる。また、本発明の基板載置面に樹脂突起物層を形成する方法によれば、基板載置台を加熱することなく基板載置面に樹脂突起物層を形成することができる。   According to the substrate mounting table of the present invention, the back surface of the substrate mounted on the substrate mounting surface is not damaged due to the material of the substrate mounting surface. Moreover, according to the resin protrusion layer transfer member of the present invention, a resin protrusion layer composed of a large number of resin protrusions can be formed at a time on the substrate mounting surface of the substrate mounting table. Moreover, according to the method for forming the resin protrusion layer on the substrate mounting surface of the present invention, the resin protrusion layer can be formed on the substrate mounting surface without heating the substrate mounting table.

本発明の実施の形態に係る基板載置台が適用される基板処理装置の概略構成を示す断面図である。It is sectional drawing which shows schematic structure of the substrate processing apparatus with which the substrate mounting base concerning embodiment of this invention is applied. 本発明の実施の形態に係る樹脂突起物層転写部材の概略構成を示す断面図である。It is sectional drawing which shows schematic structure of the resin protrusion layer transfer member which concerns on embodiment of this invention. 本発明の実施の形態に係る基板載置面に樹脂突起物層を形成する方法の工程図である。It is process drawing of the method of forming the resin protrusion layer on the board | substrate mounting surface which concerns on embodiment of this invention. 本発明に係る基板載置台であって、基板載置面に樹脂突起物層が形成された基板載置台の基板載置面を示す平面図である。FIG. 3 is a plan view showing a substrate mounting surface of the substrate mounting table according to the present invention, in which a resin protrusion layer is formed on the substrate mounting surface.

以下、本発明の実施の形態について図面を参照しながら詳細に説明する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

図1は、本発明の実施の形態に係る基板載置台が適用される基板処理装置の概略構成を示す断面図である。この基板処理装置は、例えば、液晶表示装置(LCD)製造用のガラス基板に所定のプラズマ処理を施すものである。   FIG. 1 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus to which a substrate mounting table according to an embodiment of the present invention is applied. This substrate processing apparatus performs, for example, a predetermined plasma process on a glass substrate for manufacturing a liquid crystal display device (LCD).

図1において、基板処理装置10は、例えば1辺が数mの矩形のガラス基板G(以下、単に「基板」という。)を収容する処理室(チャンバ)11を有し、該チャンバ11内部の図中下方には基板Gを載置する載置台(サセプタ)12が配置されている。サセプタ12は、例えば、表面がアルマイト処理されたアルミニウムからなる基材13で構成されており、基材13は絶縁部材14を介してチャンバ11の底部に支持されている。基材13は断面凸型を呈しており、上部には静電電極板16を内蔵した静電チャック54が設置され、その上部平面は基板Gを載置する基板載置面13aとなっている。   In FIG. 1, a substrate processing apparatus 10 includes a processing chamber (chamber) 11 that accommodates a rectangular glass substrate G (hereinafter simply referred to as “substrate”) with a side of several meters, for example. A mounting table (susceptor) 12 on which the substrate G is mounted is disposed below the figure. The susceptor 12 is composed of, for example, a base material 13 made of aluminum whose surface is anodized, and the base material 13 is supported on the bottom of the chamber 11 via an insulating member 14. The base material 13 has a convex cross section, and an electrostatic chuck 54 having a built-in electrostatic electrode plate 16 is installed at the top, and the upper plane is a substrate placement surface 13a on which the substrate G is placed. .

基板載置面13aの周囲を囲むようにシールド部材としてのシールドリング15が設けられており、シールドリング15は、例えばアルミナ等の絶縁性セラミックスで構成された長尺状物であるリング構成部品の組合せ体からなっている。   A shield ring 15 as a shield member is provided so as to surround the periphery of the substrate mounting surface 13a. The shield ring 15 is a long component made of an insulating ceramic such as alumina, for example. It consists of a combination.

静電電極板16には直流電源17が接続されており、静電電極板16に正の直流電圧が印加されると、基板載置面13aに載置された基板Gにおける静電電極板16側の面(以下、「裏面」という。)には負電位が発生し、これによって静電電極板16及び基板Gの裏面の間に電位差が生じ、該電位差に起因するクーロン力又はジョンソン・ラーベック力により、基板Gが基板載置面13aに吸着保持される。   A DC power source 17 is connected to the electrostatic electrode plate 16, and when a positive DC voltage is applied to the electrostatic electrode plate 16, the electrostatic electrode plate 16 on the substrate G placed on the substrate placement surface 13a. A negative potential is generated on the side surface (hereinafter referred to as “rear surface”), thereby generating a potential difference between the electrostatic electrode plate 16 and the rear surface of the substrate G, and Coulomb force or Johnson Rabeck resulting from the potential difference. The substrate G is attracted and held on the substrate placement surface 13a by the force.

基材13の内部には、基材13及び基板載置面13aに載置された基板Gの温度を調節するための温度調節機構(図示省略)が設けられている。この温度調節機構に、例えば、冷却水やガルデン(登録商標)等の冷媒が循環供給され、該冷媒によって冷却された基材13は基板Gを冷却する。   Inside the base material 13, a temperature adjustment mechanism (not shown) for adjusting the temperature of the base material 13 and the substrate G placed on the substrate placement surface 13a is provided. For example, coolant such as cooling water or Galden (registered trademark) is circulated and supplied to the temperature adjusting mechanism, and the base material 13 cooled by the coolant cools the substrate G.

基材13の周囲には、シールドリング15と基材13との当接部を含む側面を覆うサイドシール部材としての絶縁リング18が配置されている。絶縁リング18は絶縁性のセラミックス、例えばアルミナで構成されている。   Around the base material 13, an insulating ring 18 is disposed as a side seal member that covers a side surface including a contact portion between the shield ring 15 and the base material 13. The insulating ring 18 is made of an insulating ceramic such as alumina.

チャンバ11の底壁、絶縁部材14及び基材13を貫通する貫通孔に、昇降ピン21が昇降可能に挿通されている。昇降ピン21は基板載置面13aに載置される基板Gの搬入及び搬出時に作動するものであり、基板Gをチャンバ11内に搬入する際又はチャンバ11から搬出する際には、サセプタ12の上方の搬送位置まで上昇し、それ以外のときには基板載置面13a内に埋設状態で収容されている。   An elevating pin 21 is inserted in a through-hole penetrating the bottom wall of the chamber 11, the insulating member 14 and the base material 13 so as to be movable up and down. The elevating pins 21 operate when the substrate G placed on the substrate placement surface 13a is carried in and out, and when the substrate G is carried into or out of the chamber 11, the susceptor 12 is moved. The substrate moves up to the upper transfer position, and is otherwise housed in the substrate placement surface 13a.

基板載置面13aには、図示省略した複数の伝熱ガス供給孔が開口している。複数の伝熱ガス供給孔は伝熱ガス供給部に接続され、伝熱ガス供給部から伝熱ガスとして、例えばヘリウム(He)ガスが基板載置面13a及び基板Gの裏面の間隙に供給される。基板載置面13a及び基板Gの裏面の間隙に供給されたヘリウムガスは基板Gの熱をサセプタ12に効果的に伝達する。   A plurality of heat transfer gas supply holes (not shown) are opened in the substrate mounting surface 13a. The plurality of heat transfer gas supply holes are connected to the heat transfer gas supply unit, and for example, helium (He) gas is supplied from the heat transfer gas supply unit to the gap between the substrate mounting surface 13a and the back surface of the substrate G. The The helium gas supplied to the gap between the substrate placement surface 13 a and the back surface of the substrate G effectively transfers the heat of the substrate G to the susceptor 12.

サセプタ12の基材13には、高周波電力を供給するための高周波電源23が整合器24を介して接続されている。高周波電源23からは、例えば13.56MHzの高周波電力(RF)が印加され、サセプタ12は下部電極として機能する。整合器24は、サセプタ12からの高周波電力の反射を低減して高周波電力のサセプタ12への印加効率を最大にする。   A high frequency power source 23 for supplying high frequency power is connected to the base material 13 of the susceptor 12 via a matching unit 24. A high frequency power (RF) of 13.56 MHz, for example, is applied from the high frequency power supply 23, and the susceptor 12 functions as a lower electrode. The matching unit 24 reduces the reflection of the high frequency power from the susceptor 12 to maximize the application efficiency of the high frequency power to the susceptor 12.

基板処理装置10では、チャンバ11の内側壁とサセプタ12の側面とによって側方排気路26が形成される。この側方排気路26は排気管27を介して排気装置28に接続されている。排気装置28としてのTMP(Turbo Molecular Pump)及びDP(Dry Pump)(ともに図示省略)はチャンバ11内を真空引きして減圧する。具体的には、DPはチャンバ11内を大気圧から中真空状態(例えば、1.3×10Pa(0.1Torr)以下)まで減圧し、TMPはDPと協働してチャンバ11内を中真空状態より低い圧力である高真空状態(例えば、1.3×10−3Pa(1.0×10−5Torr)以下)まで減圧する。なお、チャンバ11内の圧力はAPCバルブ(図示省略)によって制御される。 In the substrate processing apparatus 10, a side exhaust path 26 is formed by the inner wall of the chamber 11 and the side surface of the susceptor 12. The side exhaust path 26 is connected to an exhaust device 28 via an exhaust pipe 27. A TMP (Turbo Molecular Pump) and a DP (Dry Pump) (both not shown) as the exhaust device 28 evacuate the chamber 11 to reduce the pressure. Specifically, DP depressurizes the inside of the chamber 11 from atmospheric pressure to a medium vacuum state (for example, 1.3 × 10 Pa (0.1 Torr) or less), and TMP cooperates with the DP to medium vacuum in the chamber 11. The pressure is reduced to a high vacuum state (for example, 1.3 × 10 −3 Pa (1.0 × 10 −5 Torr or less)) that is lower than the state. The pressure in the chamber 11 is controlled by an APC valve (not shown).

チャンバ11の天井部分には、サセプタ12と対向するようにシャワーヘッド30が配置されている。シャワーヘッド30は内部空間31を有するとともに、サセプタ12との間の処理空間Sに処理ガスを吐出する複数のガス孔32を有する。シャワーヘッド30は接地されており、下部電極として機能するサセプタ12と共に一対の平行平板電極を構成している。   A shower head 30 is disposed on the ceiling portion of the chamber 11 so as to face the susceptor 12. The shower head 30 has an internal space 31 and a plurality of gas holes 32 for discharging a processing gas into the processing space S between the shower head 30 and the susceptor 12. The shower head 30 is grounded and constitutes a pair of parallel plate electrodes together with the susceptor 12 functioning as a lower electrode.

シャワーヘッド30は、ガス供給管36を介して処理ガス供給源39に接続されている。ガス供給管36には、開閉バルブ37及びマスフローコントローラ38が設けられている。また、処理チャンバ11の側壁には基板搬入出口34が設けられており、この基板搬入出口34はゲートバルブ35により開閉可能となっている。そして、このゲートバルブ35を介して処理対象である基板Gが搬入出される。   The shower head 30 is connected to a processing gas supply source 39 via a gas supply pipe 36. The gas supply pipe 36 is provided with an open / close valve 37 and a mass flow controller 38. A substrate loading / unloading port 34 is provided on the side wall of the processing chamber 11, and the substrate loading / unloading port 34 can be opened and closed by a gate valve 35. Then, the substrate G to be processed is carried in / out through the gate valve 35.

基板処理装置10では、処理ガス供給源39から処理ガス導入管36を介して処理ガスが供給される。供給された処理ガスは、シャワーヘッド30の内部空間31及びガス孔32を介してチャンバ11の処理空間Sへ導入される。導入される処理ガスは、高周波電源23からサセプタ12を介して処理空間Sへ印加されるプラズマ生成用の高周波電力(RF)によって励起されてプラズマとなる。プラズマ中のイオンは、基板Gに向かって引きこまれ、基板Gに対して所定のプラズマエッチング処理を施す。   In the substrate processing apparatus 10, the processing gas is supplied from the processing gas supply source 39 through the processing gas introduction pipe 36. The supplied processing gas is introduced into the processing space S of the chamber 11 through the internal space 31 and the gas hole 32 of the shower head 30. The introduced processing gas is excited by high-frequency power (RF) for plasma generation applied to the processing space S from the high-frequency power source 23 via the susceptor 12 and becomes plasma. Ions in the plasma are attracted toward the substrate G, and the substrate G is subjected to a predetermined plasma etching process.

基板処理装置10の各構成部品の動作は、基板処理装置10が備える制御部(図示省略)のCPUがプラズマエッチング処理に対応するプログラムに応じて制御する。   The operation of each component of the substrate processing apparatus 10 is controlled by a CPU of a control unit (not shown) provided in the substrate processing apparatus 10 according to a program corresponding to the plasma etching process.

次に、図1の基板処理装置10における基板載置台12の基板載置面13aに樹脂突起物層を形成する際に適用される樹脂突起物層転写部材について説明する。   Next, a resin protrusion layer transfer member applied when forming a resin protrusion layer on the substrate mounting surface 13a of the substrate mounting table 12 in the substrate processing apparatus 10 of FIG. 1 will be described.

図2は、本発明の実施の形態に係る樹脂突起物層転写部材の概略構成を示す断面図である。   FIG. 2 is a cross-sectional view showing a schematic configuration of the resin protrusion layer transfer member according to the embodiment of the present invention.

図2において、この樹脂突起物層転写部材40は、基材シート41と、該基材シート41の片面に塗布された第1の粘着剤層42と、該第1の粘着剤層42上に貼着された複数の樹脂突起物43aを多数配列させた樹脂突起物層43と、該樹脂突起物層43の各突起物43aの表面に塗布された第2の粘着剤層44とから主として構成されている。第2の粘着剤層44の表面には、必要に応じて保護シート45が貼着される。これによって、樹脂突起物層43の表面への異物の付着を防止して清浄状態を確保することができる。   In FIG. 2, the resin protrusion layer transfer member 40 includes a base sheet 41, a first adhesive layer 42 applied to one side of the base sheet 41, and the first adhesive layer 42. It is mainly composed of a resin protrusion layer 43 in which a plurality of bonded resin protrusions 43a are arranged, and a second adhesive layer 44 applied to the surface of each protrusion 43a of the resin protrusion layer 43. Has been. A protective sheet 45 is attached to the surface of the second pressure-sensitive adhesive layer 44 as necessary. Thereby, it is possible to prevent the adhesion of foreign matters to the surface of the resin protrusion layer 43 and to ensure a clean state.

樹脂突起物層転写部材40は、例えば以下のようにして製造される。   The resin protrusion layer transfer member 40 is manufactured as follows, for example.

例えばポリエチレンテレフタレート(PET)からなる厚さが50〜100μmの基材シート41を用意し、該基材シート41の片面に、第1の粘着剤としてアクリル系粘着剤をコーターによって均等に塗布して第1の粘着剤層42を形成する。第1の粘着剤層42の厚さは、例えば30〜100μmである。   For example, a base sheet 41 made of polyethylene terephthalate (PET) and having a thickness of 50 to 100 μm is prepared, and an acrylic pressure-sensitive adhesive as a first pressure-sensitive adhesive is evenly applied to one side of the base sheet 41 by a coater. The first pressure-sensitive adhesive layer 42 is formed. The thickness of the 1st adhesive layer 42 is 30-100 micrometers, for example.

次に、第1の粘着剤層42に、樹脂突起物43aが、例えばエンボス状に多数配列された樹脂突起物層43を貼着させる。具体的には、樹脂突起物層43は、例えば、テフロン(登録商標)からなるシート状物に対し、多数の孔が開いたパンチングメタル状の型板を用いて打ち抜いて形成される。形成されたエンボス状の樹脂突起物層43に、第1の粘着剤層42を塗布した基材シート41における第1の粘着剤層42が塗布された面を押しつけて樹脂突起物層43を巻き取る。   Next, the resin protrusion layer 43 in which a large number of resin protrusions 43a are arranged in, for example, an embossed shape is attached to the first pressure-sensitive adhesive layer. Specifically, the resin protrusion layer 43 is formed, for example, by punching a sheet-like material made of Teflon (registered trademark) using a punching metal-like template having a large number of holes. The surface of the base sheet 41 coated with the first adhesive layer 42 is pressed against the formed embossed resin projection layer 43 to wind the resin projection layer 43. take.

このようにして形成された樹脂突起物層43の表面、すなわち樹脂突起物層43の樹脂突起物43aにおける第1の粘着剤層42に接する面とは逆の面に、第2の粘着剤としてシリコーン系粘着剤を、例えばコーターによって塗布して第2の粘着剤層44を形成し、樹脂突起物転写部材40とする。第2の粘着剤層の厚さは、例えば10〜30μmである。   The surface of the resin protrusion layer 43 formed in this way, that is, the surface opposite to the surface of the resin protrusion 43a of the resin protrusion 43a that is in contact with the first adhesive layer 42, is used as the second adhesive. A silicone pressure-sensitive adhesive is applied by, for example, a coater to form the second pressure-sensitive adhesive layer 44, and the resin protrusion transfer member 40 is obtained. The thickness of the second pressure-sensitive adhesive layer is, for example, 10 to 30 μm.

本実施の形態によれば、基材シート41の片面に第1の粘着剤層42を介して多数の樹脂突起物43aからなる樹脂突起物層43を貼着し、その表面に第2の粘着剤層44を塗布したので、樹脂突起物層43を転写する転写材としての基板載置面に、第2の粘着剤層44を押圧し、その後、基材シート41を剥離することによって、基板載置面に、一度に多数の樹脂突起物43aからなる樹脂突起物層43を形成することができる。   According to the present embodiment, the resin protrusion layer 43 composed of a large number of resin protrusions 43a is attached to one surface of the base sheet 41 via the first adhesive layer 42, and the second adhesive is attached to the surface thereof. Since the agent layer 44 is applied, the second pressure-sensitive adhesive layer 44 is pressed against the substrate mounting surface as a transfer material for transferring the resin protrusion layer 43, and then the substrate sheet 41 is peeled off to thereby remove the substrate. The resin protrusion layer 43 including a large number of resin protrusions 43a can be formed on the mounting surface at a time.

本実施の形態において、基材シート41としてはPETの他、PP、ポリエステル等を用いることができる。また、第1の粘着剤層42を形成する第1の粘着剤としては、アクリル系の他、シリコーン系、ゴム系粘着剤等を用いることができ、第2の粘着剤層44を形成する第2の粘着剤としては、シリコーン系の他、例えば、アクリル系粘着剤等を用いることができる。また、保護シート45としては、例えばPET、PP等が好適に適用される。   In the present embodiment, PP, polyester or the like can be used as the base sheet 41 in addition to PET. Further, as the first pressure-sensitive adhesive forming the first pressure-sensitive adhesive layer 42, in addition to acrylic, a silicone-based or rubber-based pressure-sensitive adhesive can be used, and the second pressure-sensitive adhesive layer 44 is formed. As the pressure-sensitive adhesive 2, for example, an acrylic pressure-sensitive adhesive can be used in addition to the silicone type. As the protective sheet 45, for example, PET, PP, or the like is suitably applied.

次に、本発明の実施の形態に係る基板載置面に樹脂突起物層を形成する方法について説明する。   Next, a method for forming the resin protrusion layer on the substrate mounting surface according to the embodiment of the present invention will be described.

図3は、本発明の実施の形態に係る基板載置面に樹脂突起物層を形成する方法の工程図である。   FIG. 3 is a process diagram of a method for forming a resin protrusion layer on a substrate mounting surface according to an embodiment of the present invention.

基板載置台の基板載置面に樹脂突起層を形成する際、基板載置面の周囲に、基板載置面に形成される樹脂突起物層の厚さと同じ高さだけ突出した段差部を設けておくことが好ましい。これによって、基板載置面に形成された樹脂突起物層における剥離、損傷等を回避することができるとともに、載置面上に供給される熱伝達ガスを密閉し、熱伝達効率を向上させることができる。   When forming the resin protrusion layer on the substrate mounting surface of the substrate mounting table, a stepped portion protruding by the same height as the thickness of the resin protrusion layer formed on the substrate mounting surface is provided around the substrate mounting surface. It is preferable to keep it. As a result, it is possible to avoid peeling, damage, etc. in the resin protrusion layer formed on the substrate mounting surface, and to seal the heat transfer gas supplied onto the mounting surface and improve the heat transfer efficiency. Can do.

以下、図2の樹脂突起物転写部材40を用いて、基板載置面の周囲に段差部を有する基板載置台の基板載置面に樹脂突起物層を形成する方法について説明する。   Hereinafter, a method of forming the resin protrusion layer on the substrate mounting surface of the substrate mounting table having the stepped portion around the substrate mounting surface using the resin protrusion transferring member 40 of FIG. 2 will be described.

先ず、基板載置面の周囲に段差部を有する基板載置台を用意する(図3(A))。この基板載置台12は、表面がアルマイト処理されたアルミニウムからなる基材13と、該基材13の凸状部の上部平面に設けられた静電チャック54とから主として構成されている。静電チャック54は、絶縁性のアルミナ(Al)層52と、該アルミナ層52に内蔵された静電電極板16とからなり、アルミナ層52の上部平面の周囲に、基板載置面に形成される樹脂突起物層と同じ高さの段差部56を有する。 First, a substrate mounting table having a step portion around the substrate mounting surface is prepared (FIG. 3A). The substrate mounting table 12 is mainly composed of a base material 13 made of aluminum whose surface is anodized and an electrostatic chuck 54 provided on the upper plane of the convex portion of the base material 13. The electrostatic chuck 54 includes an insulating alumina (Al 2 O 3 ) layer 52 and the electrostatic electrode plate 16 built in the alumina layer 52, and the substrate is placed around the upper plane of the alumina layer 52. A stepped portion 56 having the same height as the resin protrusion layer formed on the surface is provided.

次に、このような基板載置台12における静電チャック54の基板載置面13aに、図2の樹脂突起物層転写部材40の樹脂突起物層43に塗布された第2の粘着剤層44を当接させる。具体的には、樹脂突起物層転写部材40の保護シート45を剥がし(保護シート剥離ステップ)、これによって、樹脂突起物43aがエンボス状に多数配列された樹脂突起物層43を露出させ、この状態で樹脂突起物層43上の第2の粘着剤層44を基板載置面13aに当接して、樹脂突起物層43を貼着させる(図3(B))。   Next, the second pressure-sensitive adhesive layer 44 applied to the resin protrusion layer 43 of the resin protrusion layer transfer member 40 of FIG. 2 on the substrate mounting surface 13a of the electrostatic chuck 54 in the substrate mounting table 12 as described above. Abut. Specifically, the protective sheet 45 of the resin protrusion layer transfer member 40 is peeled off (protective sheet peeling step), thereby exposing the resin protrusion layer 43 in which a large number of resin protrusions 43a are arranged in an embossed shape. In this state, the second pressure-sensitive adhesive layer 44 on the resin protrusion layer 43 is brought into contact with the substrate mounting surface 13a, and the resin protrusion layer 43 is adhered (FIG. 3B).

次に、基板載置面13aに樹脂突起物層43を貼着した状態の樹脂突起物層転写部材40の基材シート41の一方の面を基板載置面13aに向かって均等に押しつけて樹脂突起物層43を確実に基板載置面13aに貼着させる。このようにして、樹脂突起物層43を貼着させた後、基材シート41をゆっくり剥離する。これによって、基板載置面13aに樹脂突起物層43が転写、形成された基板載置台が得られる(図3(C))。   Next, one surface of the base material sheet 41 of the resin protrusion layer transfer member 40 in a state where the resin protrusion layer 43 is adhered to the substrate placement surface 13a is pressed evenly toward the substrate placement surface 13a. The protrusion layer 43 is securely attached to the substrate placement surface 13a. Thus, after sticking the resin protrusion layer 43, the base material sheet 41 is peeled off slowly. Thus, a substrate mounting table in which the resin protrusion layer 43 is transferred and formed on the substrate mounting surface 13a is obtained (FIG. 3C).

次に、必要に応じて、エンボス状の樹脂突起物層43が形成された基板載置面の樹脂突起物層43を覆うようにコーティング層を形成する。コーティング剤としては、例えばシリコン樹脂が好適に用いられる。これによって、基板載置面13aに形成されたエンボス状の樹脂突起層43の密着力を高め、且つ強度を確保することができる。   Next, if necessary, a coating layer is formed so as to cover the resin protrusion layer 43 on the substrate mounting surface on which the embossed resin protrusion layer 43 is formed. As the coating agent, for example, a silicone resin is preferably used. Thereby, the adhesion force of the embossed resin projection layer 43 formed on the substrate mounting surface 13a can be increased and the strength can be ensured.

図4は、基板載置面13aに樹脂突起物層43が形成された基板載置台の基板載置面13aを示す平面図である。   FIG. 4 is a plan view showing the substrate placement surface 13a of the substrate placement table in which the resin protrusion layer 43 is formed on the substrate placement surface 13a.

図4において、基板載置台12の基板載置面13aには、樹脂突起物43aがエンボス状に多数配列された樹脂突起物層43が形成されている。   In FIG. 4, a resin protrusion layer 43 in which a large number of resin protrusions 43 a are arranged in an embossed shape is formed on the substrate mounting surface 13 a of the substrate mounting table 12.

本実施の形態によれば、樹脂突起物層43を、粘着剤を用いて基板載置面13aに転写して貼着させるようにしたので、基板載置台12を加熱することなく基板載置面13aに樹脂突起物層43を形成することができる。従って、耐熱温度が、例えば100℃以下と低い基板載置台にも十分適用することができる。   According to the present embodiment, since the resin protrusion layer 43 is transferred and adhered to the substrate mounting surface 13a using an adhesive, the substrate mounting surface is not heated without heating the substrate mounting table 12. The resin protrusion layer 43 can be formed on 13a. Therefore, the present invention can be sufficiently applied to a substrate mounting table having a heat resistant temperature as low as 100 ° C. or lower, for example.

また、簡便な方法で、特殊な加工装置又は治具を必要としないので、現場においても容易に樹脂突起物層43の設置及び張り替え等を行うことができる。   In addition, since a special processing device or jig is not required by a simple method, the resin protrusion layer 43 can be easily installed and replaced in the field.

本実施の形態において、樹脂突起物層43における樹脂突起物43aの大きさは、例えば断面が0.5〜2.0mmφ、高さが、例えば30〜80μmの円柱状である。樹脂突起物43aのピッチは、例えば5mmである。従って、基板載置面55には、数万個の樹脂突起物43aが形成されていることになる。樹脂突起物43aのピッチは、2〜10mmであることが好ましく、より好ましくは、4〜7mmである。ピッチが小さすぎると、突起物層を形成することが困難であり、大きすぎると、突起物としての強度が不足する虞がある。   In the present embodiment, the size of the resin protrusion 43a in the resin protrusion layer 43 is, for example, a cylindrical shape having a cross section of 0.5 to 2.0 mmφ and a height of 30 to 80 μm, for example. The pitch of the resin protrusions 43a is, for example, 5 mm. Therefore, tens of thousands of resin protrusions 43a are formed on the substrate mounting surface 55. The pitch of the resin protrusions 43a is preferably 2 to 10 mm, and more preferably 4 to 7 mm. If the pitch is too small, it is difficult to form the protrusion layer, and if it is too large, the strength as the protrusion may be insufficient.

本実施の形態において、樹脂突起物43aの構成材料としては、例えばポリテトラフルオロエチレン(テフロン(登録商標))、エポキシ樹脂、シリコン樹脂、ポリイミド樹脂、ポリエーテルイミド樹脂、バイトンをはじめとする耐熱ゴム等を適用することができ、特に、テフロン(登録商標)が好適に使用される。   In the present embodiment, as the constituent material of the resin protrusion 43a, for example, polytetrafluoroethylene (Teflon (registered trademark)), epoxy resin, silicon resin, polyimide resin, polyetherimide resin, heat-resistant rubber including Viton In particular, Teflon (registered trademark) is preferably used.

樹脂突起物43aの構成材料としてテフロン(登録商標)を用いることにより、以下の効果が得られる。   By using Teflon (registered trademark) as a constituent material of the resin protrusion 43a, the following effects can be obtained.

テフロン(登録商標)は耐腐蝕性を備えており、プラズマ処理に適用される各種の処理ガスに対する耐性がある。また、テフロン(登録商標)はアルミナに比べて熱伝導率が小さいので、突起物の材料としてテフロン(登録商標)を用いた場合とアルミナを用いた場合とでは、基板載置面13aと該基板載置面13aに載置された基板Gの裏面との隙間に供給される伝熱用のヘリウムガスを介した熱の伝わり方と突起物を介した熱の伝わり方との差が、突起物にテフロン(登録商標)を用いた場合の方が小さく、基板Gの裏面における熱分布に起因するエッチング斑の発生を抑制することができる。また、テフロン(登録商標)は誘電率が小さく、ヘリウムガスとともに形成する電界強度分布において極度なピークなどの特異点を発生することが無いので、基板Gにおける電界分布に起因するエッチング斑の発生を抑制することができる。さらにまた、テフロン(登録商標)は滑り性が良好で、摩耗が少ないので、例えば拭き取りによるクリーニング等を容易に行うことができる。   Teflon (registered trademark) has corrosion resistance and is resistant to various processing gases applied to plasma processing. In addition, since Teflon (registered trademark) has a lower thermal conductivity than alumina, the substrate mounting surface 13a and the substrate are used in the case where Teflon (registered trademark) is used as the material of the protrusion and the case where alumina is used. The difference between the way in which heat is transmitted through the heat transfer helium gas supplied to the gap between the back surface of the substrate G placed on the placement surface 13a and the way in which heat is transmitted through the protrusion is the protrusion. In the case where Teflon (registered trademark) is used, the generation of etching spots due to heat distribution on the back surface of the substrate G can be suppressed. Teflon (registered trademark) has a small dielectric constant and does not generate singular points such as extreme peaks in the electric field strength distribution formed with helium gas. Can be suppressed. Furthermore, since Teflon (registered trademark) has good slipperiness and less wear, for example, cleaning by wiping can be easily performed.

本実施の形態において、樹脂突起物層転写部材40に適用される第2の粘着剤層の粘着力は、第1の粘着剤層の粘着力よりも大きいことが好ましく、より具体的には、例えば、アルミナ溶射皮膜52により形成された基板載置面13aを構成するアルミナと、樹脂突起物層43の表面に塗布された第の2粘着剤層との粘着力Aが、基材シート41に塗布された第1の粘着剤層と樹脂突起物層43との粘着力Bよりも大きくなるように各粘着剤層を選択することが好ましい。これによって、樹脂突起物層転写部材40における樹脂突起物層43を基板載置面13aに貼着させた後、基材シート41を剥離する際、樹脂突起物層43が基材シート41に貼り付いて基板載置面13aから剥がれることがなくなり、樹脂突起物層転写部材40の樹脂突起物層43を確実に基板載置面13aに転写することができる。一方、保護シート45を剥離する際に樹脂突起物層43が基材シート41から剥がれることを防ぐため、保護シート45と第2の粘着剤層との粘着力Cが上記粘着力Bよりも弱くなるような保護シートの材料を選択したり保護シートに非粘着処理をしたりする必要がある。   In the present embodiment, the adhesive force of the second adhesive layer applied to the resin protrusion layer transfer member 40 is preferably larger than the adhesive force of the first adhesive layer, more specifically, For example, the adhesive force A between the alumina constituting the substrate mounting surface 13 a formed by the alumina sprayed coating 52 and the second adhesive layer applied to the surface of the resin protrusion layer 43 is applied to the base material sheet 41. It is preferable to select each pressure-sensitive adhesive layer so as to be larger than the adhesive force B between the applied first pressure-sensitive adhesive layer and the resin protrusion layer 43. Thus, after the resin projection layer 43 in the resin projection layer transfer member 40 is adhered to the substrate mounting surface 13a, the resin projection layer 43 is adhered to the substrate sheet 41 when the substrate sheet 41 is peeled off. Accordingly, the resin projection layer 43 of the resin projection layer transfer member 40 can be reliably transferred to the substrate placement surface 13a without being peeled off from the substrate placement surface 13a. On the other hand, the adhesive force C between the protective sheet 45 and the second adhesive layer is weaker than the adhesive force B in order to prevent the resin protrusion layer 43 from being peeled off from the base sheet 41 when the protective sheet 45 is peeled off. It is necessary to select a material for such a protective sheet or to perform a non-adhesive treatment on the protective sheet.

本実施の形態に係る基板載置台、すなわち基板が載置される基板載置面に、複数の樹脂突起物43aが配列された樹脂突起物層43が形成された基板載置台によれば、基板載置面13aに載置された基板Gの裏面に傷を付けることがない。また、基板を点接触で支持することができるので、基板の裏面に対して反応副生成物等のデポが付着する機会を低減することができる。   According to the substrate mounting table according to the present embodiment, that is, the substrate mounting table in which the resin protrusion layer 43 in which the plurality of resin protrusions 43a are arranged is formed on the substrate mounting surface on which the substrate is mounted. The back surface of the substrate G placed on the placement surface 13a is not damaged. In addition, since the substrate can be supported by point contact, the chance of deposition of reaction by-products and the like on the back surface of the substrate can be reduced.

上述した各実施の形態において、基板は、液晶ディスプレイ(LCD)用のガラス基板だけでなく、エレクトロルミネセンス(Electro Luminescence;EL)ディスプレイ、プラズマディスプレイパネル(PDP)等をはじめとするFPD(Flat Panel Display)に用いる各種基板であってもよい。   In each of the above-described embodiments, the substrate is not only a glass substrate for a liquid crystal display (LCD) but also an FPD (Flat Panel) including an electroluminescence (EL) display, a plasma display panel (PDP), and the like. Various substrates used for (Display) may be used.

10 基板処理装置
12 基板載置台(サセプタ)
13 基材
13a 基板載置面
40 樹脂突起物層転写部材
41 基材シート
42 第1の粘着剤層
43 樹脂突起物層
43a 樹脂突起物
44 第2の粘着剤層
10 substrate processing apparatus 12 substrate mounting table (susceptor)
13 Base material 13a Substrate mounting surface 40 Resin protrusion layer transfer member 41 Base sheet 42 First adhesive layer 43 Resin protrusion layer 43a Resin protrusion 44 Second adhesive layer

Claims (14)

矩形の基板にプラズマ処理を施す基板処理装置の処理室内で前記基板を載置する基板載置台であって、
前記基板が載置される基板載置面に、粘着剤層を介して前記基板載置面上に貼着された複数の樹脂突起物が配列された樹脂突起物層が形成されていることを特徴とする基板載置台。
A substrate mounting table for mounting the substrate in a processing chamber of a substrate processing apparatus that performs plasma processing on a rectangular substrate,
A resin protrusion layer in which a plurality of resin protrusions adhered to the substrate mounting surface via an adhesive layer is arranged on the substrate mounting surface on which the substrate is mounted is formed. A substrate mounting table.
前記樹脂突起物層は、断面が0.5〜2.0mmφで、高さ30〜80μmの円柱状の樹脂突起物を、2〜10mmピッチで多数配列させたものであることを特徴とする請求項1記載の基板載置台。   The resin projection layer is formed by arranging a large number of cylindrical resin projections having a cross section of 0.5 to 2.0 mmφ and a height of 30 to 80 μm at a pitch of 2 to 10 mm. Item 1. A substrate mounting table according to Item 1. 前記樹脂突起物は、ポリテトラフルオロエチレン、エポキシ樹脂、シリコン樹脂、ポリイミド樹脂、ポリエーテルイミド樹脂及び耐熱性ゴムのうちのいずれかで構成されていることを特徴とする請求項1又は2記載の基板載置台。   The said resin protrusion is comprised by either of the polytetrafluoroethylene, an epoxy resin, a silicon resin, a polyimide resin, a polyetherimide resin, and heat resistant rubber, The Claim 1 or 2 characterized by the above-mentioned. Substrate mounting table. 矩形の基板にプラズマ処理を施す基板処理装置の処理室内で前記基板を載置する基板載置台の基板載置面に樹脂突起物層を転写する樹脂突起物層転写部材であって、
基材シートと、該基材シートの片面に塗布された第1の粘着剤層と、該第1の粘着剤層に貼着された樹脂突起物層と、該樹脂突起物層に塗布された第2の粘着剤層と、を有することを特徴とする樹脂突起物層転写部材。
A resin protrusion layer transfer member that transfers a resin protrusion layer to a substrate mounting surface of a substrate mounting table for mounting the substrate in a processing chamber of a substrate processing apparatus that performs plasma processing on a rectangular substrate,
The base material sheet, the first pressure-sensitive adhesive layer applied to one side of the base material sheet, the resin protrusion layer adhered to the first pressure-sensitive adhesive layer, and the resin protrusion layer applied A resin protrusion layer transfer member, comprising: a second pressure-sensitive adhesive layer.
前記樹脂突起物層は、断面が0.5〜2.0mmφで、高さ30〜80μmの円柱状の樹脂突起物を、2〜10mmピッチで多数配列させたものであることを特徴とする請求項4記載の樹脂突起物層転写部材。   The resin projection layer is formed by arranging a large number of cylindrical resin projections having a cross section of 0.5 to 2.0 mmφ and a height of 30 to 80 μm at a pitch of 2 to 10 mm. Item 5. The resin protrusion layer transfer member according to Item 4. 前記樹脂突起物は、ポリテトラフルオロエチレン、エポキシ樹脂、シリコン樹脂、ポリイミド樹脂、ポリエーテルイミド樹脂及び耐熱性ゴムのうちのいずれかで構成されていることを特徴とする請求項4又は5記載の樹脂突起物層転写部材。   The said resin protrusion is comprised by either of polytetrafluoroethylene, an epoxy resin, a silicone resin, a polyimide resin, a polyetherimide resin, and heat resistant rubber, The Claim 4 or 5 characterized by the above-mentioned. Resin protrusion layer transfer member. 前記第2の粘着剤層と前記基板載置面との粘着力は、前記第1の粘着剤層と前記樹脂突起物層との粘着力よりも大きいことを特徴とする請求項4乃至6のいずれか1項に記載の樹脂突起物層転写部材。   The adhesive force between the second adhesive layer and the substrate mounting surface is larger than the adhesive force between the first adhesive layer and the resin protrusion layer. The resin projection layer transfer member according to claim 1. 前記第2の粘着剤層上に保護シートが貼着されていることを特徴とする請求項4乃至7のいずれか1項に記載の樹脂突起物層転写部材。   The resin protrusion layer transfer member according to any one of claims 4 to 7, wherein a protective sheet is stuck on the second pressure-sensitive adhesive layer. 矩形の基板にプラズマ処理を施す基板処理装置の処理室内で前記基板を載置する基板載置台の基板載置面に樹脂突起物層を形成する方法であって、
基材シートと、該基材シートの片面に第1の粘着剤層を介して貼着された樹脂突起物層と、該樹脂突起物層に塗布された第2の粘着剤層とを有する樹脂突起物層転写部材の前記樹脂突起物層に塗布された第2の粘着剤層を前記基板載置面に押しつけて前記樹脂突起物層を前記基板載置面に貼着する貼着ステップと、
前記貼着させた樹脂突起物層から前記基材シートを剥がす基材シート剥離ステップと、を有することを特徴とする基板載置面に樹脂突起物層を形成する方法。
A method of forming a resin protrusion layer on a substrate mounting surface of a substrate mounting table for mounting the substrate in a processing chamber of a substrate processing apparatus that performs plasma processing on a rectangular substrate,
A resin having a base sheet, a resin protrusion layer bonded to one side of the base sheet via a first pressure-sensitive adhesive layer, and a second pressure-sensitive adhesive layer applied to the resin protrusion layer A sticking step of pressing the second pressure-sensitive adhesive layer applied to the resin protrusion layer of the protrusion layer transfer member against the substrate placement surface to adhere the resin protrusion layer to the substrate placement surface;
And a base material sheet peeling step for peeling the base material sheet from the stuck resin protrusion layer. A method for forming a resin protrusion layer on a substrate mounting surface.
前記樹脂突起物層は、断面が0.5〜2.0mmφで、高さ30〜80μmの円柱状の樹脂突起物を、2〜10mmピッチで多数配列させたものであることを特徴とする請求項9記載の基板載置面に樹脂突起物層を形成する方法。   The resin projection layer is formed by arranging a large number of cylindrical resin projections having a cross section of 0.5 to 2.0 mmφ and a height of 30 to 80 μm at a pitch of 2 to 10 mm. Item 10. A method for forming a resin protrusion layer on a substrate mounting surface according to Item 9. 前記樹脂突起物は、ポリテトラフルオロエチレン、エポキシ樹脂、シリコン樹脂、ポリイミド樹脂、ポリエーテルイミド樹脂及び耐熱性ゴムのうちのいずれかで構成されていることを特徴とする請求項9又は10記載の基板載置面に樹脂突起物層を形成する方法。   The said resin protrusion is comprised by either of polytetrafluoroethylene, an epoxy resin, a silicon resin, a polyimide resin, a polyetherimide resin, and heat resistant rubber, The Claim 9 or 10 characterized by the above-mentioned. A method of forming a resin protrusion layer on a substrate mounting surface. 前記基板載置面には、アルミナ溶射膜が形成されており、前記第2の粘着剤層と前記アルミナ溶射膜との粘着力は、前記第1の粘着剤層と前記樹脂突起物層との粘着力よりも大きいことを特徴とする請求項9乃至11のいずれか1項に記載の基板載置面に樹脂突起物層を形成する方法。   An alumina sprayed film is formed on the substrate mounting surface, and an adhesive force between the second pressure-sensitive adhesive layer and the alumina sprayed film is determined between the first pressure-sensitive adhesive layer and the resin protrusion layer. The method for forming a resin protrusion layer on a substrate mounting surface according to claim 9, wherein the resin protrusion layer is larger than an adhesive force. 前記樹脂突起物層転写部材の前記第2粘着剤層には保護シートが貼着されており、前記貼着ステップの前段に、前記保護シートを剥離する保護シート剥離ステップを有することを特徴とする請求項9乃至12のいずれか1項に記載の基板載置面に樹脂突起物層を形成する方法。   A protective sheet is attached to the second pressure-sensitive adhesive layer of the resin protrusion layer transfer member, and a protective sheet peeling step for peeling the protective sheet is provided in the previous stage of the sticking step. A method for forming a resin protrusion layer on a substrate mounting surface according to claim 9. 前記基材シート剥離ステップの後段に、前記基板載置面に貼着された前記樹脂突起物層を覆うようにコーティング剤を塗布する塗布ステップを有することを特徴とする請求項9乃至13のいずれか1項に記載の基板載置面に樹脂突起物層を形成する方法。   14. The method according to claim 9, further comprising an application step of applying a coating agent so as to cover the resin protrusion layer adhered to the substrate mounting surface after the base sheet peeling step. A method of forming a resin protrusion layer on the substrate mounting surface according to claim 1.
JP2010167121A 2010-07-26 2010-07-26 Method for forming resin protrusion layer on substrate mounting surface and resin protrusion layer transfer member Expired - Fee Related JP5570900B2 (en)

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TW100126182A TWI517294B (en) 2010-07-26 2011-07-25 A method of forming a resin bump on a substrate mounting surface, and a resin protruding layer transfer member
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