201220424 六、發明說明： 【發明所屬之技術領域】 本發明係關於在基板處理裝置之處理室內載置基板之 基板載置台、在該基板載置台之基板載置面形成樹脂突起 物層之方法及適用於該方法之樹脂突起物層轉印構件。 【先前技術】 在以液晶顯不裝置（L C D )爲首之F P D ( F1 a t P a n e 1 Display)之製造工程中，所知的有對以玻璃基板爲首之各 種基板施予電漿處理之基板處理裝置。 在如此之基板處理裝置中，具有在處理室（以下，稱 爲「腔室」）內支撐玻璃基板（以下，單稱爲「基板」） 之基板載置台，配置成隔著該基板載置台和處理空間而對 向之上部電極，對當作下部電極而發揮功能之基板載置台 施加電漿生成用之高頻電力（RF)，並且導入處理氣體至 處理空間而生成電漿，並使用所生成之電漿而對被載置在 基板載置台之基板載置面之基板施予特定之電漿處理。 在基板載置台之基板載置面通常形成有氧化鋁（ al2〇3 )熔射膜以當作絕緣層。構成氧化鋁熔射膜之氧化 鋁之硬度爲HV 1000左右，因爲較一般玻璃基板之硬度的 H V640硬，故當將基板載置於基板載置台，藉由靜電吸盤 進行靜電吸附之時，有由於氧化鋁熔射膜使得基板之背面 刮傷之問題。 另外，於平面狀之基板載置面載置基板之時’則有容 -5- 201220424 易在基板之背面附著異物之問題，爲了迴避此，嘗試在基 板載置面形成突起物層而以點接觸客撐基板，開發在基板 載置面形成具有多數突起之突起層的技術（例如，參照專 利文獻1 )。 [先前技術文獻] [專利文獻] [專利文獻1]日本特開2008-25 1 5 74號公報 【發明內容】 [發明所欲解決之課題] 但是，爲了防止塵埃等之異物附著，並且不會使基板 之背面刮傷，必須在基板載置面形成由硬度較基板之材質 的玻璃小之材料所構成之突起。再者，要一次在基板載置 面形成多數突起物非常困難。 然而，硬度小於玻璃之材料，以可以在基板處理裝置 之處理室內適用者而言，可舉出例如聚四氟乙烯（商品名 稱：鐵氟龍（註冊商標））等之樹脂。就以將鐵氟龍（註 冊商標）膜或由鐵氟龍（註冊商標）所構成之突起物轉印 至構成構件表面之方法而言，雖然一般採用藉由靜電粉體 塗裝使由鐵氟龍（註冊商標）所構成之粉吸附於被轉印面 而加熱至400 °C之燒附方法，但是基板載置台之耐熱溫度 爲例如1 00°C以下，無法採用如此之燒附方法。 本發明之第1課題係提供不會因基.板載置面之材質而[Technical Field] The present invention relates to a substrate mounting table on which a substrate is placed in a processing chamber of a substrate processing apparatus, and a method of forming a resin projection layer on a substrate mounting surface of the substrate mounting table. A resin protrusion layer transfer member suitable for the method. [Prior Art] In the manufacturing process of an FPD (F1 at Panel 1 Display) headed by a liquid crystal display (LCD), there is known a substrate which is subjected to plasma treatment on various substrates including glass substrates. Processing device. In the substrate processing apparatus, the substrate mounting table that supports the glass substrate (hereinafter simply referred to as "substrate") in the processing chamber (hereinafter referred to as "chamber") is disposed so as to be interposed between the substrate mounting table and The high-frequency electric power (RF) for plasma generation is applied to the substrate mounting table functioning as the lower electrode, and the processing gas is introduced into the processing space to generate plasma, and is generated by using the upper surface electrode. The plasma is subjected to a specific plasma treatment on the substrate placed on the substrate mounting surface of the substrate stage. An alumina (al2〇3) melted film is usually formed on the substrate mounting surface of the substrate stage as an insulating layer. The hardness of the alumina constituting the alumina spray film is about HV 1000, and since the H V 640 is harder than the hardness of the general glass substrate, when the substrate is placed on the substrate stage and electrostatically adsorbed by the electrostatic chuck, there is The problem of scratching the back side of the substrate due to the aluminum oxide spray film. In addition, when the substrate is placed on a flat substrate mounting surface, there is a problem that a foreign matter is easily attached to the back surface of the substrate. In order to avoid this, an attempt is made to form a projection layer on the substrate mounting surface. In the contact with the guest substrate, a technique of forming a projection layer having a plurality of protrusions on the substrate mounting surface has been developed (for example, see Patent Document 1). [PRIOR ART DOCUMENT] [Patent Document 1] [Patent Document 1] JP-A-2008-25 1 5 74 SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] However, in order to prevent adhesion of foreign matter such as dust, In order to scratch the back surface of the substrate, it is necessary to form a projection made of a material having a smaller hardness than that of the substrate material on the substrate mounting surface. Furthermore, it is very difficult to form a plurality of protrusions on the substrate mounting surface at one time. However, a resin having a hardness lower than that of the glass may be, for example, a resin such as polytetrafluoroethylene (trade name: Teflon (registered trademark)), which can be used in the processing chamber of the substrate processing apparatus. In the method of transferring a Teflon (registered trademark) film or a protrusion composed of Teflon (registered trademark) to the surface of the constituent member, although it is generally applied by electrostatic powder coating, it is made of iron fluoride. The method in which the powder composed of the dragon (registered trademark) is adsorbed on the transfer surface and heated to 400 ° C, but the heat resistance temperature of the substrate stage is, for example, 100 ° C or less, and such a baking method cannot be employed. The first problem of the present invention is to provide a material that does not depend on the surface of the substrate.
S -6 - 201220424 使被載置在基板載置面之基板之背面刮傷之基板載置台。 再者’本發明之第2課題係提供可以在基板載置台之基板 載置面一次形成由多數樹脂突起物所構成之樹脂突起物層 之樹脂突起物層轉印構件。再者，本發明之第3課題係提 供不用加熱基板載置台可以在基板載置面形成樹脂突起物 層的在基板載置面形成樹脂突起物層之方法。 [用以解決課題之手段] 爲了解決上述第1課題，申請專利範圍第1項所記載之 基板載置台，係用以在對矩形之基板施予電漿處理之基板 處理裝置之處理室內載置上述基板，該基板載置台之特徵 爲： 在載置上述基板之基板載置面，形成有經黏著劑層而 被貼附於上述基板載置面上之配列著複數樹脂突起物的樹 脂突起物層。 申請專利範圍第2項所記載之基板載置台，係在申請 專利範圍第1項所記載之基板載置台中，上述樹脂突起物 層係以2〜10mm間距配列多數剖面爲0.5〜2.0mm φ ，高度 3 0〜80 y m之圓柱狀之樹脂突起物者。 申請專利範圍第3項所記載之基板載置台，係在申請 專利範圍第1或2項所記載之基板載置台中，上述樹脂突起 物係以聚四氟乙烯、環氧樹脂、矽樹脂、聚醯亞胺樹脂、 聚醚醯亞胺樹脂及耐熱性橡膠中之任一者所構成。 爲了解決上述第2課題，申請專利範圍第4項所記載之 201220424 樹脂突起物層轉印構件，係用以在對矩形之基板施予電漿 處理之基板處理裝置之處理室內載置上述基板之基板載置 台之基板載置面，轉印樹脂突起物層，該樹脂突起物層轉 印構件之特徵爲： 具有基材片、被塗佈在該基材片之單面的第1黏著劑 層，和被貼附於該第1黏著劑層之樹脂突起物層，和被塗 佈於該樹脂突起物層之第2黏著劑層。 申請專利範圍第5項所記載之樹脂突起物層轉印構件 ，係在申請專利範圍第4項所記載之樹脂突起物層轉印構 件中，上述樹脂突起物層係以2〜1 0mm間距配列多數剖面 爲0.5〜2.0mm φ ，高度30〜8〇em之圓柱狀之樹脂突起物 者。 申請專利範圍第6項所記載之樹脂突起物層轉印構件 ，係在申請專利範圍第4或5項所記載之樹脂突起物層轉印 構件中，上述樹脂突起物係以聚四氟乙烯、環氧樹脂、矽 樹脂、聚醯亞胺樹脂、聚醚醯亞胺樹脂及耐熱性橡膠中之 任一者所構成。 申請專利範圍第7項所記載之樹脂突起物層轉印構件 ，係在申請專利範圍第4至6項中之任一項所記載之樹脂突 起物層轉印構件中，上述第2黏著劑層和上述基板載置面 之黏著力，大於上述第1黏著劑層和上述樹脂突起物層之 黏著力。 申請專利範圍第8項所記載之樹脂突起物層轉印構件 ，係申請專利範圍第4至7項中之任一項所記載之樹脂突起S -6 - 201220424 A substrate mounting table that is scratched by the back surface of the substrate placed on the substrate mounting surface. Further, the second object of the present invention is to provide a resin projection layer transfer member which can form a resin projection layer composed of a plurality of resin projections at a time on a substrate mounting surface of a substrate mounting table. According to a third aspect of the present invention, there is provided a method of forming a resin projection layer on a substrate mounting surface by forming a resin projection layer on a substrate mounting surface without heating the substrate mounting table. [Means for Solving the Problem] In order to solve the above-described first problem, the substrate mounting table described in the first aspect of the patent application is placed in a processing chamber of a substrate processing apparatus that applies a plasma treatment to a rectangular substrate. In the substrate, the substrate mounting table is characterized in that a resin protrusion in which a plurality of resin protrusions are attached to the substrate mounting surface via an adhesive layer is formed on a substrate mounting surface on which the substrate is placed Floor. The substrate mounting table according to the second aspect of the invention is the substrate mounting stage according to the first aspect of the invention, wherein the resin protrusion layer is arranged at a pitch of 2 to 10 mm and a plurality of sections are 0.5 to 2.0 mm φ. A cylindrical resin protrusion having a height of 30 to 80 ym. The substrate mounting table according to claim 3, wherein the resin projection is made of polytetrafluoroethylene, epoxy resin, enamel resin, or the substrate mounting table according to the first or second aspect of the patent application. Any of a ruthenium imine resin, a polyether quinone imide resin, and a heat resistant rubber. In order to solve the above-mentioned second problem, the 201220424 resin protrusion layer transfer member described in claim 4 is for placing the substrate in a processing chamber of a substrate processing apparatus that applies a plasma treatment to a rectangular substrate. The substrate mounting surface of the substrate mounting table transfers a resin protrusion layer, and the resin protrusion layer transfer member is characterized by having a substrate sheet and a first adhesive layer coated on one surface of the substrate sheet And a resin protrusion layer attached to the first adhesive layer and a second adhesive layer applied to the resin protrusion layer. The resin projection layer transfer member according to claim 4, wherein the resin projection layer is arranged at a pitch of 2 to 10 mm in the resin projection layer transfer member according to the fourth aspect of the invention. Most of the cylindrical resin projections having a cross section of 0.5 to 2.0 mm φ and a height of 30 to 8 〇em. The resin protrusion layer transfer member according to claim 4, wherein the resin protrusion is made of polytetrafluoroethylene, or the resin protrusion layer transfer member according to the fourth or fifth aspect of the invention. Any of epoxy resin, enamel resin, polyimine resin, polyether quinone resin, and heat resistant rubber. The resin protrusion layer transfer member according to any one of claims 4 to 6, wherein the second adhesive layer is the resin protrusion layer transfer member according to any one of claims 4 to 6 The adhesion to the substrate mounting surface is greater than the adhesion between the first adhesive layer and the resin protrusion layer. The resin projection layer transfer member according to claim 8 is the resin protrusion described in any one of claims 4 to 7.
-8- 201220424 物層轉印構件中，在上述第2黏著劑層上貼附保護片。 爲了解決上述第3課題，申請專利範圍第9項所記載之 在基板載置面形成樹脂突起物層之方法，係用以在對矩形 之基板施予電漿處理之基板處理裝置之處理室內載置上述 基板之基板載置台之基板載置面，形成樹脂突起物層，該 方法之特徵爲： 貼附步驟，該步驟係將被塗佈於樹脂突起物層轉印構 件之上述樹脂突起物層的第2黏著劑層推壓於上述基板載 面，而將上述樹脂突起物層貼附在上述基板載置面，且該 樹脂突起物層轉印構件具有基材片和在該基材片的單面隔 著第1黏著劑層而被貼附脂樹脂突起物層，和被塗佈在該 樹脂突起物層之第2黏著劑層：和基材片剝離步驟，該步 驟係從上述貼附之樹脂突起物層剝開上述基材片。 申請專利範圍第1 〇項所記載之在基板載置面形成樹脂 突起物層之方法，係在申請專利範圍第9項所記載之在基 板載置面形成樹脂突起物層之方法中，上述樹脂突起物層 係以2〜1 0 m m間距配列多數剖面爲0.5〜2.0 m m φ ，高度3 0 〜80ym之圓柱狀之樹脂突起物者。 申請專利範圍第1 1項所記載之在基板載置面形成樹脂 突起物層之方法中，係在申請專利範圍第9或1 0項所記載 之在基板載置面形成樹脂突起物層之方法中，上述樹脂突 起物係以聚四氟乙烯、環氧樹脂、矽樹脂、聚醯亞胺樹脂 、聚醚醯亞胺樹脂及耐熱性橡膠中之任一者所構成。 如申請專利範圍第12項所記載之在基板載置面上形成 201220424 樹脂突起物層之方法，係在申請專利範圍第9至11項中之 任一項所記載之基板載置面形成樹脂突起物層之方法中， 在前述基板載置面形成有氧化鋁熔射膜，上述第2黏著劑 層和上述氧化鋁溶射膜之黏著力，大於上述第1黏著劑層 和上述樹脂突起物層之黏著力。 申請專利範圍第1 3項所記載之基板載置面形成樹脂突 起物層之方法，係在申請專利範圍第9至第12項中之任一 項所記載之在基板載置面形成樹脂突起物層之方法中，上 述樹脂突起物層轉印構件之上述第2黏著劑層貼附保護片 ，在上述貼附步驟之前段，具有剝離上述保護片之保護片 剝離步驟。 申請專利範圍第1 4項所記載之在基板載置面形成樹脂 突起物層之方法，係在如申請專利範圍第9至1 3項中之任 一項所記載之在基板載置面形成樹脂突起物層之方法中， 在上述基材片剝離步驟之後段，具有以覆蓋被貼附於上述 基板載置面之上述樹脂突起物層之方式塗佈塗層劑的塗佈 步驟。 [發明效果] 若藉由本發明之基板載置台時，則不會有因基板載置 面之材質而使得被載置在基板載置面之基板的背面刮傷之 情形。再者，若藉由本發明之樹脂突起物層轉印構件時， 可以在基板載置台之基板載置面一次形成由多數樹脂突起 物所構成之樹脂突起物層。再者，若藉由在本發明之基板-8- 201220424 In the layer transfer member, a protective sheet is attached to the second adhesive layer. In order to solve the above-mentioned third problem, the method of forming a resin protrusion layer on a substrate mounting surface described in the ninth application of the patent application is for processing in a processing chamber of a substrate processing apparatus for applying a plasma treatment to a rectangular substrate. The substrate mounting surface of the substrate mounting table of the substrate is formed to form a resin protrusion layer. The method is characterized in that an attaching step is performed on the resin protrusion layer applied to the resin protrusion layer transfer member. The second adhesive layer is pressed against the substrate carrying surface, and the resin protruding layer is attached to the substrate mounting surface, and the resin protruding layer transfer member has a substrate sheet and a substrate sheet. a resin resin protrusion layer is adhered to the first adhesive layer on one side, and a second adhesive layer coated on the resin protrusion layer: and a substrate sheet peeling step, the step is attached from the above The resin protrusion layer peels off the above substrate sheet. The method of forming a resin protrusion layer on a substrate mounting surface according to the first aspect of the invention is the method of forming a resin protrusion layer on a substrate mounting surface according to claim 9 of the invention, wherein the resin The protrusion layer is a columnar resin protrusion having a cross section of 0.5 to 2.0 mm φ and a height of 30 to 80 μm at a pitch of 2 to 10 mm. In the method of forming a resin protrusion layer on a substrate mounting surface described in the first aspect of the invention, the method of forming a resin protrusion layer on a substrate mounting surface described in the ninth or tenth aspect of the patent application is disclosed. The resin protrusion is composed of any one of polytetrafluoroethylene, epoxy resin, enamel resin, polyimide resin, polyether quinone resin, and heat resistant rubber. A method of forming a resin protrusion layer on a substrate mounting surface according to the invention of claim 12, wherein the resin substrate is formed on the substrate mounting surface according to any one of claims 9 to 11. In the method of the material layer, an alumina spray film is formed on the substrate mounting surface, and the adhesion between the second adhesive layer and the alumina spray film is larger than the first adhesive layer and the resin protrusion layer Adhesion. A method of forming a resin protrusion layer on a substrate mounting surface according to any one of claims 9 to 12, wherein a resin protrusion is formed on a substrate mounting surface as described in any one of claims 9 to 12. In the layer method, the second adhesive layer of the resin protrusion layer transfer member is attached with a protective sheet, and a protective sheet peeling step of peeling off the protective sheet is provided before the attaching step. A method of forming a resin protrusion layer on a substrate mounting surface according to any one of claims 9 to 3, wherein the resin is formed on the substrate mounting surface as described in any one of claims 9 to 13. In the method of the protrusion layer, the coating step of applying the coating agent so as to cover the resin protrusion layer attached to the substrate mounting surface is provided in the subsequent step of the substrate sheet peeling step. [Effect of the Invention] When the substrate mounting table of the present invention is used, the back surface of the substrate placed on the substrate mounting surface is not scratched by the material of the substrate mounting surface. Further, when the resin projection layer transfer member of the present invention is used, a resin projection layer composed of a plurality of resin projections can be formed at a time on the substrate mounting surface of the substrate stage. Furthermore, if by the substrate of the present invention
S -10- 201220424 載置面形成樹脂突起物層之方法時’則可以不用加熱基板 載置台，在基板載置面形成樹脂突起物層。 【實施方式】 以下，針對本發明之實施型態，一面參照圖面一面予 以詳細說明。 第1圖爲表示適用與本發明之實施型態有關之基板載 置台之基板處理裝置之槪略構成的剖面圖。該基板處理裝 置爲對例如液晶顯示裝置（LCD )製造用之玻璃基板施予 特定電漿處理。 在第1圖中，基板處理裝置1〇具有收容例如一邊爲數m 之矩形之玻璃基板G (以下，單稱爲「基板」）之處理室 (腔室）11，在該腔室11內部之圖中下方配置有載置基板 G之載置台（承載器）12。承載器12係由例如表面被氧皮 鋁處理之由鋁形成的基材13所構成，基材13係經絕緣構件 14而被支撐於腔室11之底部。基材13剖面呈凸型，在上部 配置內藏有靜電電極板16之靜電吸盤54，在其上部平面成 爲載置基板G之基板載置面13a» 以包圍基板載置面13a之周圍之方式設置有當作遮蔽 構件之遮蔽環1 5，遮蔽環1 5係由以例如氧化鋁等之絕緣性 陶磁所構成之長條狀物之環狀構成構件之組合體所構成。 在靜電電極板16連接有直流電源17，當對靜電電極板 16施加正的直流電壓時，則在被載置於基板載置面13a之 基板G中之靜電電極板1 6側之面（以下，稱爲「背面」） -11 - 201220424 產生負電位，依此在靜電電極板16及基板G之背面之間產 生電位差，因該電位差引起之庫倫力或強生拉別克（ Johnsen-Rahbek)力，基板G被吸附保持於基板載置面13a 〇 在基材13之內部，設置有用以調節基材13及被載置於 基板載置面13a之基板G之溫度的溫度調節基構（省略圖示 )。對該溫度調節機構，循環供給例如冷卻水或潤滑油（ GALDEN註冊商標）等之冷媒，藉由該冷媒被冷卻之基材 1 3冷卻基板G。 在基材13之周圍配置有當作覆蓋包含遮蔽環15和基材 1 3之抵接部的側面之遮蔽構件之絕緣環1 8。絕緣環1 8係由 絕緣性之陶瓷例如氧化鋁所構成。 在貫通腔室11之底壁、絕緣構件14及基材13之貫通孔 ，升降銷21被插通成可升降。升降銷21係在被載置於基板 載置面13a之基板G搬入及搬出時作動時，於將基板G搬入 至腔室11內之時或從腔室Π搬出之時，上升至承載器12之 上方之搬運位置，除此之外時以埋設狀態被收容在基板載 置面1 3 a內。 在基板載置面13a開口有省略圖示之複數導熱氣體供 給孔。複數之導熱氣體供給孔係連接於導熱氣體供給部， 從導熱氣體供給部供給作爲導熱氣體例如氦（He )氣至基 板載置面1 3a及基板G之背面之間隙。被供給至基板載置面 1 3 a及基板G之背面之間隙的氨氣體係有效果地將基板G之 熱傳達至承載器12。 -12- 201220424 在承載器12之基材13，經整合器24連接有用以供給高 頻電力之高頻電源23。從高頻電源23施加例如13. 5 6MHz之 高頻電力（RF)，承載器12係當作下部電極而發揮功能。 整合器24係降低來自承載器12之高頻電力之反射，使供給 至高頻電力之承載器12的供給效率成爲最大。 在該基板處理裝置10中藉由腔室11之內側壁和承載器 1 2之側面，形成側方排氣路26。該側方排氣口 26經排氣管 27連接排氣裝置28。當作排氣裝置28之TMP ( Turbo Molecular Pump)及 DP ( Dry Pump)(皆省略圖示）係將 腔室11內予以抽真空而減壓。具體而言，D P係將腔室11 內從大氣壓減壓至中真空狀態（例如，1.3xl0Pa(0.1T〇rr )以下），TMP與DP合作將腔室1 1內減壓至低於中真空狀 態之壓力的高真空狀態（例如，1.3xl0_3Pa(1.0xl(T5Torr )以下）。並且，腔室11內之壓力藉由APC閥（省略圖示 )而被控制。 在腔室11之頂棚部以與承載器12對向之方式配置有噴 淋頭30。噴淋頭30具有內部空間31，並且在承載器12之間 之處理空間S具有吐出處理氣體之複數氣體孔32。噴淋頭 3 0被接地，與當作下部電極而發揮功能之承載器12—起構 成一對平行平板電極。 噴淋頭30經氣體供給管36而連接於氣體供給源39。在 氣體供給管36設置有開關閥37及質量流量控制器38。再者 ，在處理腔室11之側壁設置有基板搬入搬出口 34，該基板 搬入搬出口 34藉由上述閘閥35成爲能夠開關。然後，經該 -13- 201220424 閘閥35搬入搬出屬於處理對象之基板G。 在基板處理裝置10中，從處理氣體供給源39經處理氣 體導入管36而供給處理氣體。被供給之處理氣體係經噴淋 頭30之內部空間31及氣體孔32而被導入至腔室11之處理空 間S»被導入之處理氣體係藉由從高頻電源23經承載器12 而被施加至處理空間S之電漿生成用之高頻電力（RF)被 激勵而成爲電漿。電漿中之離子係朝向基板G被拉入，對 基板G施予特定之電漿蝕刻處理。 基板處理裝置10之各構成構件之動作，係基板處理裝 置10具有之控制部（省略圖式）之CPU因應對應於電漿蝕 刻處理之程式而予以控制。 接著，針對適用於第1圖之基板處理裝置10中之基板 載置台12之基板載置面13a形成樹脂突起物層之時的樹脂 突起物層轉印構件予以說明。 第2圖爲表示與本發明之實施型態有關之樹脂突起物 層轉印構件之槪略構成的剖面圖。 在第2圖中，該樹脂突起物層轉印構件40主要係由基 材片41、被塗佈於該基材片41之單面的第1黏著劑層42、 被貼附於該第1黏著劑層42上之多數配列複數樹脂突起物 43a之樹脂突起物層43，和被塗佈於該樹脂突起物層43之 各突起物43a之表面的第2黏著劑層44所構成。在第2黏著 劑層44之表面因應所需貼附保護片45。依此，可以防止異 物附著於樹脂突起物層43之表面而確保清淨狀態。 樹脂突起物層轉印構件40係例如以下述般被製造出°S -10- 201220424 When the method of forming the resin projection layer on the mounting surface is performed, the resin projection layer can be formed on the substrate mounting surface without heating the substrate mounting table. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Fig. 1 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus to which a substrate mounting table according to an embodiment of the present invention is applied. The substrate processing apparatus applies a specific plasma treatment to, for example, a glass substrate for manufacturing a liquid crystal display device (LCD). In the first embodiment, the substrate processing apparatus 1 has a processing chamber (chamber) 11 for accommodating, for example, a rectangular glass substrate G (hereinafter simply referred to as "substrate") having a length of several m, and is inside the chamber 11. A mounting table (carrier) 12 on which the substrate G is placed is disposed at the lower side in the drawing. The carrier 12 is composed of, for example, a substrate 13 made of aluminum whose surface is treated with aluminum oxide, and the substrate 13 is supported by the insulating member 14 at the bottom of the chamber 11. The base material 13 has a convex shape in cross section, and an electrostatic chuck 54 in which the electrostatic electrode plate 16 is housed is disposed on the upper portion, and the upper surface thereof is a substrate mounting surface 13a of the substrate G to surround the substrate mounting surface 13a. A shadow ring 15 as a shielding member is provided, and the shielding ring 15 is composed of a combination of annular members which are formed of an insulating ceramic such as alumina. The DC power source 17 is connected to the electrostatic electrode plate 16, and when a positive DC voltage is applied to the electrostatic electrode plate 16, the surface of the substrate G placed on the substrate mounting surface 13a is on the side of the electrostatic electrode plate 16 (hereinafter , referred to as "back") -11 - 201220424 A negative potential is generated, whereby a potential difference is generated between the electrostatic electrode plate 16 and the back surface of the substrate G, and the Coulomb force or the Johnsen-Rahbek force due to the potential difference, The substrate G is adsorbed and held on the substrate mounting surface 13a inside the substrate 13, and a temperature adjustment substrate for adjusting the temperature of the substrate 13 and the substrate G placed on the substrate mounting surface 13a is provided (illustration omitted ). The temperature adjusting means circulates, for example, a refrigerant such as cooling water or lubricating oil (GALDEN registered trademark), and the substrate G is cooled by the substrate 1 which is cooled by the refrigerant. An insulating ring 18 as a shielding member covering the side surface including the shielding ring 15 and the abutting portion of the substrate 13 is disposed around the substrate 13. The insulating ring 18 is made of an insulating ceramic such as alumina. The lift pin 21 is inserted into the through hole of the bottom wall of the chamber 11 and the insulating member 14 and the base material 13 so as to be movable up and down. When the lift pin 21 is actuated when the substrate G placed on the substrate mounting surface 13a is loaded and unloaded, the lift pin 21 is raised to the carrier 12 when the substrate G is carried into the chamber 11 or when it is carried out from the chamber Π. The transport position above is stored in the substrate mounting surface 13a in an embedded state. A plurality of heat transfer gas supply holes (not shown) are opened in the substrate mounting surface 13a. A plurality of heat transfer gas supply holes are connected to the heat transfer gas supply unit, and a gap which is a heat transfer gas such as helium (He) gas to the back surface of the substrate mounting surface 13a and the substrate G is supplied from the heat transfer gas supply unit. The ammonia gas system supplied to the gap between the substrate mounting surface 133a and the back surface of the substrate G effectively transmits the heat of the substrate G to the carrier 12. -12- 201220424 On the substrate 13 of the carrier 12, a high-frequency power source 23 for supplying high-frequency power is connected via an integrator 24. A high frequency power (RF) of, for example, 13.56 MHz is applied from the high frequency power source 23, and the carrier 12 functions as a lower electrode. The integrator 24 reduces the reflection of the high frequency power from the carrier 12, maximizing the supply efficiency of the carrier 12 supplied to the high frequency power. In the substrate processing apparatus 10, a side exhaust path 26 is formed by the inner side wall of the chamber 11 and the side surface of the carrier 12. The side exhaust port 26 is connected to the exhaust unit 28 via an exhaust pipe 27. As the exhaust device 28, TMP (Turbo Molecular Pump) and DP (Dry Pump) (all omitted) are evacuated in the chamber 11 to be depressurized. Specifically, the DP system decompresses the chamber 11 from atmospheric pressure to a medium vacuum state (for example, 1.3×10 Pa (0.1 T 〇 rr ) or less), and the TMP cooperates with the DP to decompress the chamber 11 to below the medium vacuum. The high vacuum state of the pressure of the state (for example, 1.3x10_3Pa (1.0xl (T5Torr) or less). Moreover, the pressure in the chamber 11 is controlled by an APC valve (not shown). In the ceiling portion of the chamber 11 A shower head 30 is disposed opposite to the carrier 12. The shower head 30 has an internal space 31, and the processing space S between the carriers 12 has a plurality of gas holes 32 for discharging a process gas. The shower head 30 It is grounded and constitutes a pair of parallel plate electrodes together with the carrier 12 functioning as the lower electrode. The shower head 30 is connected to the gas supply source 39 via the gas supply pipe 36. The gas supply pipe 36 is provided with an on-off valve. 37. The mass flow controller 38. Further, a substrate loading/unloading port 34 is provided on the side wall of the processing chamber 11, and the substrate loading/unloading port 34 is switchable by the gate valve 35. Then, the gate valve is passed through the -13-201220424 35 Loading and unloading the substrate G belonging to the processing target In the substrate processing apparatus 10, the processing gas is supplied from the processing gas supply source 39 through the processing gas introduction pipe 36. The supplied processing gas system is introduced into the chamber 11 through the internal space 31 of the shower head 30 and the gas hole 32. The process gas system into which the process space S» is introduced is excited by the high frequency power (RF) for plasma generation applied to the process space S from the high frequency power source 23 via the carrier 12 to become a plasma. The intermediate ion is pulled in toward the substrate G, and a specific plasma etching process is applied to the substrate G. The operation of each component of the substrate processing apparatus 10 is a CPU of a control unit (not shown) of the substrate processing apparatus 10. The resin projection layer is formed when the resin projection layer is formed on the substrate mounting surface 13a of the substrate mounting table 12 in the substrate processing apparatus 10 of the first embodiment, which is controlled in accordance with the program of the plasma etching process. Fig. 2 is a cross-sectional view showing a schematic configuration of a resin projection layer transfer member according to an embodiment of the present invention. In Fig. 2, the resin projection layer transfer member 40 is shown in Fig. 2 The base material sheet 41, the first adhesive layer 42 applied to one surface of the base material sheet 41, and the resin of a plurality of the plurality of resin projections 43a to be attached to the first adhesive layer 42 The protrusion layer 43 is formed of a second adhesive layer 44 applied to the surface of each of the protrusions 43a of the resin protrusion layer 43. The protective sheet 45 is attached to the surface of the second adhesive layer 44 as needed. According to this, it is possible to prevent foreign matter from adhering to the surface of the resin protrusion layer 43 and to ensure a clean state. The resin protrusion layer transfer member 40 is manufactured, for example, as follows.
S -14- 201220424 例如’準備由聚對苯二甲酸乙二酯（PET )所構成之 厚度爲50〜100/zm之基材片41，在該基材41之單面，藉由 塗佈機均等塗佈當作第1黏著劑之丙烯酸系黏著劑而形成 第1黏著劑層42。第1黏著劑層42之厚度爲例如30〜1〇〇 y m ο 接著，在第1黏著劑層42貼附例如以壓花狀多述配列 樹脂突起物43a之樹脂突起物層43。具體而言，樹脂突起 物層43對於例如由鐵氟龍（註冊商標）所構成之片狀物， 使用開設多數孔之沖孔金屬狀之模板打孔而形成。在所形 成之壓花狀之樹脂突起物層43，推壓塗佈有第1黏著劑層 42之基材片41中塗佈有第1黏著劑層42之面而捲取樹脂突 起物層43。 如此所形成之樹脂突起物層4 3之表面，即是和樹脂突 起物層43之樹脂突起物43 a中與第1黏著劑層42接合之面相 反之面上，藉由例如塗佈機塗佈矽氧系黏著劑以當作第2 黏著劑而形成第2黏著劑層44，設爲樹脂突起物轉印構件 40。第2黏著劑層之厚度爲例如10〜30 // m。 若藉由本實施型態時，在基材片41之單面經第1黏著 劑層42貼附由多數樹脂突起物43a所構成之樹脂突起物層 43，並在其表面塗佈第2黏著劑層44 ’故在當作轉印樹脂 突起物層43之轉印材的基板載置面，推壓第2黏著劑層44 ，之後藉由剝離基材片41，可以在基板載置面一次形成由 多數樹脂突起物43 a所構成之樹脂突起物層43。 在本實施形態中，就以基材片41而言除PET之外可以 -15- 201220424 使用PP、聚酯等。再者，就以形成第1黏著劑層42之第1黏 著劑而言，除丙烯酸系之外，可以使用矽氧系、橡膠系黏 著劑等，就以形成第2黏著劑層44之第2黏著劑而言，除矽 氧系之外，可以使用例如丙烯酸系黏著劑等。再者，就以 保護片45而言，適合使用例如PET、PP等。 接著，針對在與本發明之實施型態有關之基板載置面 形成樹脂突起物層之方法予以說明。 第3圖爲與本發明之實施型態有關之在基板載置面形 成樹脂突起物層之方法的工程圖。 於基板載置台之基板載置面形成樹脂突起層之時，在 基板載置面之周圍，設置僅以與形成在基板載置面之樹脂 突起物層之厚度相同高度突出之階差部爲佳。依此，可以 迴避形成在基板載置面之樹脂突起物層之剝離、損傷等， 並且可以密閉被供給至載置面上之熱傳達氣體，提升熱傳 導率。 以下，使用第2圖之樹脂突起物轉印構件40，針對在 基板載置面之周圍具有階差部之基板載置台之基板載置面 上形成樹脂突起物層之方法予以說明。 首先，準備在基板載置面之周圍具有階差部之基板載 置台（第3圖（A))。該基板載置台12主要係以表面被氧 皮鋁處理之鋁而形成之基材13，和被設置在該基材13之凸 狀部之上部平面之靜電吸盤54所構成。靜電吸盤54係由絕 緣性之氧化鋁（A 12 〇3 )層5 2，和內藏在該氧化鋁層5 2之 靜電電極板16所構成，在氧化鋁層52之上部平面周圍，具S -14- 201220424 For example, 'preparation of a substrate sheet 41 made of polyethylene terephthalate (PET) having a thickness of 50 to 100/zm, on one side of the substrate 41, by a coater The first adhesive layer 42 is formed by uniformly applying an acrylic adhesive as the first adhesive. The thickness of the first adhesive layer 42 is, for example, 30 to 1 〇〇 y m. Then, the resin projection layer 43 in which the resin projections 43a are arranged in an embossed shape is attached to the first adhesive layer 42, for example. Specifically, the resin protrusion layer 43 is formed by, for example, a sheet made of Teflon (registered trademark) punched with a template having a punched metal shape in which a plurality of holes are formed. In the embossed resin protrusion layer 43 formed, the surface of the base material sheet 41 coated with the first adhesive layer 42 is coated with the surface of the first adhesive layer 42 and the resin protrusion layer 43 is wound up. . The surface of the resin projection layer 43 thus formed, that is, the surface opposite to the surface of the resin projection 43a of the resin projection layer 43 joined to the first adhesive layer 42, is coated by, for example, a coater. The epoxy adhesive is used as the second adhesive to form the second adhesive layer 44, and is used as the resin projection transfer member 40. The thickness of the second adhesive layer is, for example, 10 to 30 // m. According to the present embodiment, the resin protrusion layer 43 composed of the plurality of resin protrusions 43a is attached to the single surface of the base material sheet 41 via the first adhesive layer 42, and the second adhesive is applied to the surface thereof. The layer 44' is pressed against the substrate mounting surface of the transfer material of the resin protrusion layer 43, and the second adhesive layer 44 is pressed, and then the base material sheet 41 is peeled off, so that the substrate mounting surface can be formed once. A resin protrusion layer 43 composed of a plurality of resin protrusions 43 a. In the present embodiment, PP, polyester, or the like may be used as the base material sheet 41 in addition to PET -15 - 201220424. In addition, in the first adhesive which forms the first adhesive layer 42, in addition to the acrylic type, an oxygen-based or rubber-based adhesive can be used to form the second adhesive layer 44. As the adhesive, in addition to the oxime oxygen system, for example, an acrylic adhesive or the like can be used. Further, as the protective sheet 45, for example, PET, PP, or the like is suitably used. Next, a method of forming a resin protrusion layer on a substrate mounting surface according to an embodiment of the present invention will be described. Fig. 3 is a view showing a method of forming a resin projection layer on a substrate mounting surface in accordance with an embodiment of the present invention. When the resin projection layer is formed on the substrate mounting surface of the substrate mounting table, it is preferable to provide a step portion protruding only at the same height as the thickness of the resin projection layer formed on the substrate mounting surface around the substrate mounting surface. . As a result, peeling or damage of the resin projection layer formed on the substrate mounting surface can be avoided, and the heat transfer gas supplied to the mounting surface can be sealed to improve the heat conductivity. In the following, a method of forming a resin projection layer on a substrate mounting surface of a substrate mounting table having a step portion around the substrate mounting surface will be described with reference to the resin projection transfer member 40 of Fig. 2 . First, a substrate mounting table having a step portion around the substrate mounting surface is prepared (Fig. 3(A)). The substrate stage 12 is mainly composed of a substrate 13 formed of aluminum whose surface is treated with aluminum oxide, and an electrostatic chuck 54 provided on a plane above the convex portion of the substrate 13. The electrostatic chuck 54 is composed of an insulating alumina (A 12 〇 3 ) layer 52 and an electrostatic electrode plate 16 embedded in the alumina layer 52, and is disposed around the upper surface of the alumina layer 52.
S -16- 201220424 有與被形成在基板載置面之樹脂突起物層相同高度之階差 部56。 接著，在如此之基板載置台12中之靜電吸盤54之基板 載置面13a，抵接被塗佈於第2圖之樹脂突起物層轉印構件 40之樹脂突起物層43之第2黏著劑層44。具體而言，剝開 樹脂突起物層轉印構件40之保護片45 (保護片剝離步驟） ，依此使壓花狀多數配列樹脂突起物43 a之樹脂突起物層 43露出，在該狀態下使樹脂突起物層43上之第2黏著劑層 44抵接於基板載置面13a，而貼附樹脂突起物層43 (第3圖 (B))。 接著，將在基板載置面13a貼附有樹脂突起物層43之 狀態的樹脂突起物層轉印構件40之基材片4 1之一方面朝向 基板載置面13a均等推壓而使樹脂突起物層43確實地貼附 於基板載置面13a。如此一來，貼附樹脂突起物層43之後 ’慢慢地剝離基材片4 1。依此，在基板載置面1 3 a轉印樹 脂突起物層43，取得所形成之基板載置台（第3圖（C)) 〇 接著’因應所需，以覆蓋形成有壓花狀之樹脂突起物 層43之基板載置面之樹脂突起物層43之方式，形成塗佈層 。就以塗佈劑而言，適合使用例如矽樹脂。依此，可以提 高被形成在基板載置面13a之壓花狀之樹脂突起層43之密 接力，並且確保強度。 第4圖係表示在基板載置面i3a形成有樹脂突起物層43 之基板載置台之基板載置面l3a之俯視圖。 -17- 201220424 在第4圖中，在基板載置台12之基板載置面13a形成有 以壓花狀多數配列樹脂突起物43 a之樹脂突起物層43。 若藉由本實施型態時，因使用黏著劑轉印至基板載置 面13a而貼附樹脂突起物層43，故不用加熱基板載置台12 ，可以在基板載置面13a形成樹脂突起物層43。因此，可 以充分適用於耐熱溫度低例如1 00°C以下之基板載置台。 再者，因可以以簡單方法，不需要特殊加工裝置或治 具，故即使在現場亦可以容易進行樹脂突起物層4 3之設置 及重貼等。 在本實施型態中，樹脂突起物層43中之樹脂突起物 4 3 a之大小例如剖面爲0.5〜2.0 m m φ ，高度爲例如3 0〜8 0 /zm之圓柱狀。樹脂突起物43a之間距爲例如5mm。因此， 在基板載置面55形成數萬個之樹脂突起物43a。樹脂突起 物43 a之間距以2〜1 0mm爲佳，更佳爲4〜7mm。當間距過 小時’則難以形成突起物層，當過大時，則有作爲突起物 強度不足之虞。 在本實施型態中，就以樹脂突起物43a之構成材料而 言’可以使用例如聚四氟乙烯（鐵氟龍（註冊商標）、環 氧樹脂、矽樹脂、聚醯亞胺樹脂、聚醚醯亞胺樹脂及以氟 化橡膠爲首之耐熱橡膠等’尤其適合使用鐵氟龍（註冊商 標）。 就以樹脂突起物43 a之構成材料而言，藉由使用鐵氟 龍（註冊商標），取得以下之效果。 鐵氟龍（註冊商標）具備耐腐蝕性，對適用於電漿處S -16-201220424 has a step portion 56 of the same height as the resin protrusion layer formed on the substrate mounting surface. Then, the substrate mounting surface 13a of the electrostatic chuck 54 in the substrate mounting table 12 is brought into contact with the second adhesive applied to the resin projection layer 43 of the resin projection layer transfer member 40 of Fig. 2 . Layer 44. Specifically, the protective sheet 45 (protective sheet peeling step) of the resin protrusion layer transfer member 40 is peeled off, whereby the resin protrusion layer 43 of the embossed majority of the resin protrusions 43 a is exposed, in this state. The second adhesive layer 44 on the resin protrusion layer 43 is brought into contact with the substrate mounting surface 13a, and the resin protrusion layer 43 is attached (Fig. 3(B)). Then, one of the base material sheets 41 of the resin projection layer transfer member 40 in a state in which the resin projection layer 43 is adhered to the substrate mounting surface 13a is uniformly pressed toward the substrate mounting surface 13a to cause resin protrusions. The object layer 43 is surely attached to the substrate mounting surface 13a. As a result, the base material sheet 41 is gradually peeled off after the resin projection layer 43 is attached. As a result, the resin protrusion layer 43 is transferred onto the substrate mounting surface 13 a to obtain the formed substrate stage (Fig. 3 (C)), and then the embossed resin is formed to cover the required A coating layer is formed to form the resin protrusion layer 43 on the substrate mounting surface of the protrusion layer 43. As the coating agent, for example, an anthracene resin is suitably used. According to this, the adhesion of the embossed resin protruding layer 43 formed on the substrate mounting surface 13a can be improved, and the strength can be secured. Fig. 4 is a plan view showing the substrate mounting surface 13a of the substrate mounting table on which the resin projection layer 43 is formed on the substrate mounting surface i3a. In the fourth embodiment, a resin projection layer 43 in which a plurality of resin projections 43a are arranged in an embossed shape is formed on the substrate mounting surface 13a of the substrate stage 12. According to the present embodiment, since the resin projection layer 43 is attached by transferring the adhesive to the substrate mounting surface 13a, the resin projection layer 43 can be formed on the substrate mounting surface 13a without heating the substrate mounting table 12. . Therefore, it can be suitably applied to a substrate mounting table having a low heat resistant temperature of, for example, 100 ° C or less. Further, since the special processing apparatus or the tool can be omitted in a simple manner, the resin projection layer 4 3 can be easily placed and reattached even at the site. In the present embodiment, the size of the resin projections 4 3 a in the resin projection layer 43 is, for example, a cross section of 0.5 to 2.0 m m φ and a height of, for example, a cylindrical shape of 3 0 to 8 0 /zm. The distance between the resin projections 43a is, for example, 5 mm. Therefore, tens of thousands of resin projections 43a are formed on the substrate mounting surface 55. The distance between the resin projections 43a is preferably 2 to 10 mm, more preferably 4 to 7 mm. When the pitch is too small, it is difficult to form a protrusion layer, and when it is too large, there is a defect that the protrusion strength is insufficient. In the present embodiment, as the constituent material of the resin protrusion 43a, for example, polytetrafluoroethylene (Teflon (registered trademark), epoxy resin, enamel resin, polyimide resin, polyether can be used. It is particularly suitable to use Teflon (registered trademark) for yttrium imide resin and heat-resistant rubber such as fluorinated rubber. For the constituent material of resin protrusion 43 a, by using Teflon (registered trademark) , to achieve the following effects. Teflon (registered trademark) has corrosion resistance, applicable to the plasma
S -18- 201220424 理之各種處理氣體具有耐性。再者，因鐵氟龍（註冊商標 )較氧化鋁熱傳導率小，故作爲突起物之材料使用鐵氟龍 (註冊商標）之時和使用氧化鋁之時，經被供給至基板載 置面13a和被載置於該基板載置面13a之基板G之背面之間 隙的導熱用之氦氣之熱的傳達方式，和經突起物之熱的傳 達方式之差，突起物使用鐵氟龍（註冊商標）之時較小， 可以抑制在基板G之背面產生熱分布所引起之蝕刻斑。再 者，由於鐵氟龍（註冊商標）之介電常數小，在與氦氣所 形成之電場強度分布中，無產生極度峰値等之特異點，故 可以抑制因基板G之電場分布所引起之蝕刻斑的產生。再 者，由於鐵氟龍（註冊商標）滑動性良好，摩耗少，故可 以容易進行例如藉由擦取之洗淨等。 在本實施型態中，適用於樹脂突起物層轉印構件40之 第2黏著劑層之黏著力，以大於第1黏著劑層之黏著力爲佳 ，更具體而言，例如以大於構成藉由氧化鋁熔射皮膜52所 形成之基板載置面1 3 a之氧化鋁，和被塗佈於樹脂突起物 層43之表面之第2黏著劑層的黏著力A，大於被塗佈於基材 片41之第1黏著劑層和樹脂突起物層43之黏著劑B之方式， 選擇各黏著劑層爲佳。依此，將樹脂突起物層轉印構件40 中之樹脂突起物層43貼附於基板載置面13a之後，於剝離 基材片41之時，樹脂突起物層43貼附於基材片41而不會從 基板載置面13a剝離’可以確實將樹脂突起物層轉印構件 40之樹脂突起物層43確實地轉印至基板載置面13a。另外 ，於剝離保護片45之時，爲了防止樹脂突起物層43從基材 -19- 201220424 片41剝離，必須選擇保護片45和第2黏著劑層之黏著力C較 上述黏著力B弱之保護片之材料，或對保護片施予非黏著 處理。 若藉由與本實施型態有關之基板載置台，即是在載置 基板之基板載置面形成配列複數之樹脂突起物43a之樹脂 突起物層43之基板載置台時，則不會有使載置於基板載置 面1 3a之基板G之背面刮傷之情形。再者，因以點接觸支撐 基板，故可以降低反應副生成物等之附著物附著於基板的 背面之機會。 在上述各實施型態中，基板不僅液晶顯示器（LCD ) 用之玻璃基板，即使爲使用於以電激發光（Electro Luminescence: EL)顯示器、電漿顯示面板（PDP)等爲 首之FPD ( Flat Panel Display)的各種基板亦可。 【圖式簡單說明】 第1圖爲表示適用與本發明之實施型態有關之基板載 置台之基板處理裝置之槪略構成的剖面圖。 第2圖爲表示與本發明之實施型態有關之樹脂突起物 層轉印構件之槪略構成的剖面圖。 第3圖爲與本發明之實施型態有關之在基板載置面形 成樹脂突起物層之方法的工程圖。 第4圖爲表示與本發明有關之基板載置台，在基板載 置面形成樹脂突起物層之基板載置台之基板載置面的俯視 圖。 O' -20- 201220424 【主要元件符號說明】 1 〇:基板處理裝置 12:基板載置台（承載器） 13 :基材 1 3 a :基板載置面 40 :樹脂突起物層轉印構件 41 :基材片 42 :第1黏著劑層 4 3 :樹脂突起物層 43a :樹脂突起物 44 :第2黏著劑層 -21 -S -18- 201220424 The various processing gases are resistant. In addition, since Teflon (registered trademark) has a smaller thermal conductivity than alumina, it is supplied to the substrate mounting surface 13a when Teflon (registered trademark) is used as the material of the projections and when alumina is used. The heat transfer method of the heat of the helium gas and the heat transfer method of the heat transfer by the gap between the back surface of the substrate G placed on the substrate mounting surface 13a and the heat transfer method of the protrusions are used. The trademark) is small in time, and it is possible to suppress the occurrence of etching spots caused by heat distribution on the back surface of the substrate G. In addition, since the dielectric constant of Teflon (registered trademark) is small, there is no singular point such as extreme peaks and the like in the electric field intensity distribution formed by the helium gas, so that the electric field distribution due to the substrate G can be suppressed. The generation of etched spots. Further, since Teflon (registered trademark) has good slidability and low friction, it can be easily washed by, for example, wiping. In the present embodiment, the adhesion force applied to the second adhesive layer of the resin projection layer transfer member 40 is preferably greater than the adhesion of the first adhesive layer, and more specifically, for example, by a larger composition. The adhesion force A of the substrate on the substrate mounting surface 13 3 formed by the alumina spray film 52 and the second adhesive layer applied to the surface of the resin protrusion layer 43 is larger than that applied to the base. The adhesive layer of the first adhesive layer of the material sheet 41 and the adhesive protrusion layer 43 of the resin projection layer 43 is preferably selected from the respective adhesive layers. After the resin protrusion layer 43 in the resin protrusion layer transfer member 40 is attached to the substrate mounting surface 13a, the resin protrusion layer 43 is attached to the substrate sheet 41 when the substrate sheet 41 is peeled off. The resin projection layer 43 of the resin projection layer transfer member 40 can be surely transferred to the substrate mounting surface 13a without being peeled off from the substrate mounting surface 13a. Further, when the protective sheet 45 is peeled off, in order to prevent the resin protrusion layer 43 from being peeled off from the substrate 19 - 201220424 sheet 41, it is necessary to select the adhesive force C of the protective sheet 45 and the second adhesive layer to be weaker than the above-mentioned adhesive force B. Protect the material of the sheet or apply a non-adhesive treatment to the sheet. When the substrate mounting table according to the present embodiment is used, that is, the substrate mounting table on which the resin projection layer 43 of the plurality of resin projections 43a is arranged is formed on the substrate mounting surface on which the substrate is placed, the substrate mounting table 43 does not have a The case where the back surface of the substrate G placed on the substrate mounting surface 13a is scratched. Further, since the substrate is supported by the point contact, it is possible to reduce the chance that the adhering substances such as reaction by-products adhere to the back surface of the substrate. In each of the above embodiments, the substrate is not only a glass substrate for a liquid crystal display (LCD), but is used for an FPD (Flat) such as an electroluminescence (EL) display or a plasma display panel (PDP). Various substrates of Panel Display can also be used. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus to which a substrate mounting table according to an embodiment of the present invention is applied. Fig. 2 is a cross-sectional view showing a schematic configuration of a resin projection layer transfer member according to an embodiment of the present invention. Fig. 3 is a view showing a method of forming a resin projection layer on a substrate mounting surface in accordance with an embodiment of the present invention. Fig. 4 is a plan view showing a substrate mounting surface of a substrate mounting table on which a resin projection layer is formed on a substrate mounting surface of the substrate mounting table according to the present invention. O' -20- 201220424 [Description of main component symbols] 1 〇: substrate processing apparatus 12: substrate mounting table (carrier) 13 : substrate 1 3 a : substrate mounting surface 40 : resin projection layer transfer member 41 : Substrate sheet 42: first adhesive layer 4 3 : resin protrusion layer 43a: resin protrusion 44: second adhesive layer-21 -